KR100979189B1 - Consecutive substrate processing system - Google Patents

Abstract

The continuous substrate processing system of the present invention has multiple divisions having a plurality of process chambers arranged in series for performing a continuous substrate processing process on a substrate to be processed and a plurality of split electrodes for inducing plasma discharge in the plurality of process chambers. An electrode assembly. The continuous substrate processing system of the present invention can efficiently process a substrate to be processed, and a high speed and high quality processing efficiency can be obtained for a large area of substrate to be processed even in a continuous substrate processing process. In particular, a large area of plasma can be generated uniformly by the plurality of split electrodes, thereby enabling substrate processing on a substrate having a more uniform large area, and a plurality of multi-split electrode assemblies and a plurality of split electrodes provided therein. In parallel driving, the current balance is automatically achieved, so that a large area of plasma can be generated and maintained more uniformly, thereby obtaining very high productivity. In addition, it is easy to construct an efficient system suitable for a substrate processing process sequence of a substrate to be processed.

Continuous Processing, Multiple Electrodes, Plasma, Current Balance

Description

Continuous Substrate Processing System {CONSECUTIVE SUBSTRATE PROCESSING SYSTEM}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing system for manufacturing various semiconductor devices such as semiconductor integrated circuit devices, flat panel display devices, solar cells, and the like, and more particularly, to a continuous substrate processing system for continuously processing a substrate to be processed.

In order to efficiently manufacture semiconductor devices, continuous substrate processing systems such as cluster systems and inline systems have been provided. The continuous substrate system includes a plurality of processing modules for continuous substrate processing such as a plurality of process chambers, a transfer chamber, and a load / unload chamber. do. Cluster system refers to a multi-chamber substrate processing system comprising a transfer robot (or handler) and a plurality of process chambers provided around it. The cluster system includes a transfer chamber and a transfer robot freely rotatable thereto. Each side of the transfer chamber is equipped with a plurality of process chambers for performing a substrate processing process. Such a cluster system increases substrate throughput by allowing a plurality of substrates to be processed at the same time or a plurality of processes can be performed continuously. The inline system consists of a plurality of processing chambers arranged between the load chamber and the unload chamber. In-line systems have the advantage of being productive as the substrate loaded into the load chamber undergoes a continuous process while passing through a plurality of processing chambers. In the case of solar cells, an inline system is used to continuously deposit an amorphous silicon p layer, i layer, and n layer.

Substrate processing systems for continuous substrate processing, such as cluster systems or in-line systems, improve productivity by increasing process efficiency and facility efficiency. However, various factors, such as the increase in the size of the substrate to be processed and the development of a new treatment process, have caused a demand for improvement of existing facilities. In order to configure a plurality of process chambers, it is also a very important requirement to efficiently configure process equipment to reduce equipment costs.

Plasma, on the other hand, is a highly ionized gas containing the same number of positive ions and electrons. Plasma discharges are used for gas excitation to generate active gases containing ions, free radicals, atoms, molecules. Active gases are widely used in various fields and are used in various semiconductor manufacturing processes for manufacturing semiconductor devices such as integrated circuit devices, flat panel displays, solar cells, etc., for example, etching, deposition, cleaning, and ashing. It is used in various ways such as ashing.

There are a number of plasma sources for generating plasma, and capacitive coupled plasma and inductive coupled plasma using radio frequencies are representative examples. Capacitively coupled plasma sources have the advantage of high process productivity compared to other plasma sources due to their high capacity for precise capacitive coupling and ion control.

Physical vapor deposition installations using capacitively coupled plasma sources flow a low pressure sputtering gas, usually argon, inside a high vacuum plasma reactor and apply a DC or RF power source between the two electrodes to cause ionization to generate plasma. At this time, since the negative electrode plate covered with the source target material is maintained at a negative potential compared to the substrate, the positively charged argon ions are accelerated toward the source target and collide with each other to release the target material in the form of vapor, and the target vapor in the neutral state is facing the wafer substrate. Will be deposited on.

However, when the capacitively coupled electrode is enlarged in order to process an enlarged substrate, the electrode may be deformed or damaged by deterioration of the electrode. In this case, the electric field strength may be uneven, which may result in uneven plasma density and contaminate the inside of the reactor. In the case of an inductively coupled plasma source, it is also difficult to obtain a uniform plasma density when the area of the induction coil antenna is increased.

In the recent semiconductor manufacturing industry, due to various factors such as ultra miniaturization of semiconductor devices, the enlargement of silicon wafer substrates or substrates to be processed such as glass or plastic substrates for the manufacture of semiconductor circuits, and the development of new materials to be processed. There is a need for improved plasma processing techniques. In particular, there is a need for improved plasma sources and plasma processing techniques that have good processing capabilities for large area substrates. Furthermore, various semiconductor manufacturing apparatuses using lasers have been provided. Semiconductor manufacturing processes using lasers have been widely applied to various processes such as deposition, etching, annealing, cleaning, and the like on a substrate to be processed. In the case of a semiconductor manufacturing process using such a laser, the above-described problems exist.

The enlargement of the substrate to be processed causes the enlargement of the entire production equipment. Larger production facilities increase the overall plant area, resulting in increased production costs. Therefore, there is a need for a plasma reactor and a plasma processing system capable of minimizing the installation area. In particular, in the semiconductor manufacturing process, productivity per unit area is one of the important factors affecting the price of the final product. Therefore, it is very important to effectively organize the composition of production equipment as a way to increase productivity per unit area.

As in any industry, many efforts are underway in the semiconductor industry to increase productivity. In order to increase productivity, production facilities basically need to be increased or improved. However, simply increasing the production equipment has a problem that not only the expansion cost of the process equipment but also the space equipment of the clean room increases, resulting in high cost.

SUMMARY OF THE INVENTION An object of the present invention is basically to efficiently process a substrate to be processed, and has a multi-division electrode assembly capable of obtaining a high speed and high quality processing efficiency for a large area of a substrate even in a continuous substrate processing process. It is to provide a continuous substrate processing system.

One aspect of the present invention for achieving the above technical problem relates to a continuous substrate processing system. A continuous substrate processing system of the present invention comprises: a plurality of process chambers arranged successively to perform a continuous substrate processing process on a substrate to be processed; And a multiple split electrode assembly having a plurality of split electrodes for inducing plasma discharge in the plurality of process chambers.

In one embodiment, it includes a load chamber connected to a continuous arranged front end of the plurality of process chambers and an unload chamber connected to a rear end.

In one embodiment, the load chamber and the unload chamber have either a structure facing each other or a structure not facing each other.

In one embodiment, the plurality of process chambers includes one or more process chambers that perform two or more substrate processing processes on the same substrate.

In one embodiment, the plurality of process chambers includes an arrangement structure in which one to-be-processed substrate repeats at least two or more process chambers so as to perform two or more substrate processing processes on the same to-be-processed substrate in a circulation section. .

In one embodiment, the plurality of process chambers and the multiple split electrode assembly are configured such that the substrate is processed in either the horizontal or non-horizontal state of the substrate to be processed.

In one embodiment, a plurality of main power sources for driving multiple split electrode assemblies respectively installed in the plurality of process chambers.

In one embodiment, the plurality of main power sources includes a common main power source for driving at least two of the multiple split electrode assemblies respectively installed in the plurality of process chambers.

In one embodiment, a distribution circuit for distributing the radio frequency power provided from the main power source to a plurality of split electrodes of a corresponding multi split electrode assembly.

In one embodiment, an impedance matcher is arranged between the main power supply and the distribution circuit to perform impedance matching.

In one embodiment, the distribution circuit includes a current balancing circuit for adjusting the balance of the current supplied to the plurality of split electrodes of the multiple split electrode assembly.

In one embodiment, the current balancing circuit includes a plurality of transformers for balancing the current by driving the plurality of split electrodes in parallel, the primary side of the plurality of transformers are connected in series, the secondary side is connected to the plurality of split electrodes Correspondingly connected.

In one embodiment, the secondary side of the plurality of transformers each comprises a grounded middle tab, one end of the secondary side outputs a constant voltage and the other end a negative voltage, respectively, the constant voltage is a constant voltage electrode of the plurality of split electrodes Thus, the negative voltage is provided to negative voltage electrodes of the plurality of split electrodes.

In one embodiment, the current balancing circuit includes a voltage level adjusting circuit that can vary the current balancing adjusting range.

In one embodiment, the current balancing circuit comprises a compensation circuit for compensation of leakage current.

In one embodiment, the current balancing circuit includes a protection circuit for preventing damage due to transient voltage.

In one embodiment, the multiple split electrode assembly includes an electrode mounting plate on which the plurality of split electrodes are mounted.

In one embodiment, the electrode mounting plate includes a plurality of gas injection holes, and includes a gas supply unit for supplying a process gas into the process chamber through the gas injection holes.

In one embodiment, the gas supply comprises at least two separate gas supply channels for separate gas supply.

In one embodiment, the plurality of split electrodes each include a plurality of gas injection holes.

In one embodiment, the plurality of process chambers includes at least two process chambers having a common exhaust structure.

In one embodiment, a support for supporting a substrate to be processed in the plurality of process chambers is provided, and the support is either biased or unbiased.

In one embodiment, the support is biased by a single frequency power supply or two or more different frequency power supplies.

In one embodiment, the support includes an electrostatic chuck.

In one embodiment, the support comprises a heater.

In one embodiment, the support has a movable structure, such as a substrate to be processed, and includes a driving mechanism for moving the support.

In one embodiment, the plurality of split electrodes includes a conductor region and an insulator region.

In one embodiment, the capacitively coupled electrode assembly includes an insulating layer formed between the plurality of split electrodes.

In one embodiment, the split electrode includes a target electrode that functions as both a source target and a capacitive coupling electrode.

In one embodiment, the target electrode comprises one or more magnets.

In one embodiment, the split electrode includes a capacitive coupling electrode and a source target cover mounted to the outside of the capacitive coupling electrode.

In one embodiment, the capacitively coupled electrode comprises one or more magnets.

The plurality of split electrodes may include a plurality of constant voltage electrodes and a plurality of negative voltage electrodes, and the arrangement of the constant voltage electrodes and the negative voltage electrodes may be arranged in an alternating linear arrangement structure and in a matrix form. And at least one array structure selected from among structures, mutually alternating spiral array structures, and mutually alternating concentric array structures.

In example embodiments, the plurality of constant voltage electrodes and the plurality of negative voltage electrodes include one or more structures selected from a barrier structure, a plate structure, a protrusion structure, a column structure, an annular structure, a spiral structure, and a linear structure.

In one embodiment, at least one of the plurality of process chambers includes a laser source for constructing a multi-laser scanning line consisting of a plurality of laser scanning lines inside the process chamber.

In one embodiment, the at least one process chamber includes a laser transmission window for scanning a laser beam therein, and the laser source is configured to direct the laser beam into the at least one process chamber through the laser transmission window. One or more laser sources for scanning to form the multi laser scanning line.

In one embodiment, the laser transmission window comprises two oppositely configured windows, and the laser source reflects the laser beam generated from the one or more laser sources with the two windows interposed between the multi-laser scanning. It includes a plurality of reflectors to form a line.

The continuous substrate processing system of the present invention can efficiently process a substrate to be processed, and a high speed and high quality processing efficiency can be obtained for a large area of substrate to be processed even in a continuous substrate processing process. In particular, a large area of plasma can be generated uniformly by the plurality of split electrodes, thereby enabling substrate processing on a substrate having a more uniform large area, and a plurality of multi-split electrode assemblies and a plurality of split electrodes provided therein. In parallel driving, the current balance is automatically achieved, so that a large area of plasma can be generated and maintained more uniformly, thereby obtaining very high productivity. In addition, it is easy to construct an efficient system suitable for a substrate processing process sequence of a substrate to be processed.

In order to fully understand the present invention, preferred embodiments of the present invention will be described with reference to the accompanying drawings. Embodiment of the present invention may be modified in various forms, the scope of the invention should not be construed as limited to the embodiments described in detail below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Therefore, the shape of the elements in the drawings and the like may be exaggerated to emphasize a more clear description. It should be noted that the same members in each drawing are sometimes shown with the same reference numerals. Detailed descriptions of well-known functions and constructions which may be unnecessarily obscured by the gist of the present invention are omitted.

1 is a view showing a continuous substrate processing system according to a first embodiment of the present invention.

Referring to FIG. 1, a continuous substrate processing system 200 includes a plurality of process chambers 210, 220, and 230 arranged in series, a gas supply system 500 for supplying a process gas, and an exhaust system for gas exhaust. 400. A transfer system (not shown) is provided for transferring the substrates 102 and 112 to be processed. The plurality of process chambers 210, 220, and 230 are provided with a multiple split electrode assembly 30 having a plurality of split electrodes for inducing plasma discharge and a gas supply unit 20 for supplying a process gas therein. A power supply system 300 for supplying power to the multiple split electrode assembly 30 provided in the plurality of process chambers 210, 220, and 230 is provided.

The gas supply system 500 receives the necessary process gas from the gas supply source 520 and provides the gas supply unit 20 of the plurality of process chambers 210, 220, and 230. The gas supply system 500 includes a plurality of gas supply valves 510 for supplying necessary process gases, and the gas supply source 520 according to the recipe of the substrate processing process performed in each process chamber 210, 220, 230. The appropriate gas is selected from and provided to the gas supply unit 20 of the corresponding process chamber. The exhaust system 400 controls the vacuum control of the plurality of process chambers 210, 220, and 230 and the exhaust of the process gas. Exhaust system 400 has a plurality of exhaust valves 410 for exhausting respective process chambers. The plurality of process chambers 210, 220, 230 may each have an independent vacuum pump and have an independent exhaust structure. However, it may include at least two process chambers having a common exhaust structure. In the case of having a common exhaust structure, the number of vacuum pumps can be reduced, thereby reducing equipment costs.

The plurality of process chambers 210, 220, 230 are continuously arranged to perform a continuous substrate processing process. The plurality of process chambers 210, 220, 230 may include deposition chambers such as, for example, chemical vapor deposition chambers and physical vapor deposition chambers for processing various substrates. Or an etching chamber or an electroplating chamber. The painting may include a cooling chamber and a preheating chamber. As such, the plurality of process chambers 210, 220, and 230 may be provided with various kinds of process chambers for substrate processing of a substrate to be processed. The plurality of process chambers 210, 220, and 230 may include a preheating chamber for preheating the substrate or a heating chamber for heating the substrate. Or a cleaning chamber for cleaning the substrate to be processed. As such, although all of the plurality of process chambers 210, 220, 230 may be process chambers with multiple split electrode assemblies 30, some process chambers may not be provided.

The body constituting the plurality of process chambers 210, 220, 230 may be made of a metal material such as aluminum, stainless steel, copper, or a coated metal, for example, anodized aluminum or nickel plated aluminum. Alternatively, it may be made of refractory metal. Alternatively, it is possible to fabricate the body in whole or in part from an electrically insulating material such as quartz or ceramic. As such, the body may be made of any material suitable for carrying out the intended plasma process. The structure of the body may have a suitable structure depending on the substrate to be processed and for uniform generation of the plasma.

The substrates 102 and 112 to be processed are, for example, substrates such as wafer substrates, glass substrates, plastic substrates, and the like for manufacturing various devices such as semiconductor integrated circuit devices, flat panel display devices, solar cells, and the like. The plasma reactor 10 is connected to a vacuum pump (not shown). The plasma reactor 10 is subjected to plasma processing on the substrate 13 under low pressure below atmospheric pressure. However, the plasma reactor 10 of the present invention may also be implemented as an atmospheric pressure plasma processing system for treating a substrate under atmospheric pressure.

The load chamber 100 is connected to the continuous ends of the plurality of process chambers 210, 220, and 230, and the unload chamber 110 is connected to the rear end, respectively. The load chamber 100 and the unload chamber 110 are also connected to a vacuum pump (not shown) controlled by the exhaust system 400. The substrate 102 to be processed before being loaded into the load chamber 110 is subjected to substrate treatment through a plurality of process chambers 210, 220, and 230. The processed substrate 112 is unloaded into the undoor chamber 112. It may be preferable that the plurality of process chambers 210, 220, 230 and the respective connecting portions of the load chamber 100 and the unload chamber 110 are provided with appropriate opening and closing means 204 to avoid mutual process interference. .

2 is a diagram illustrating a multiple split electrode assembly, and FIG. 3 is a cross-sectional view of the split electrode.

Referring to FIG. 2, the multiple split electrode assembly 30 includes a plurality of capacitively coupled electrodes 31 and 33 for inducing plasma discharge by capacitive coupling within the plurality of process chambers 210, 220, and 230. Equipped. The plurality of split electrodes 31 and 33 are mounted on the electrode mounting plate 34. The electrode mounting plate 34 may be installed to form an upper portion of the process chamber. The plurality of split electrodes 31 and 33 have a structure in which a plurality of constant voltage electrodes 33 and a negative voltage electrode 31 that linearly cross the upper portion of the process chamber are alternately arranged in parallel at intervals. The plurality of split electrodes 31 and 33 have a linear barrier structure that protrudes below the electrode mounting plate 34. As shown in FIG. 3, the plurality of split electrodes 31 and 33 may be configured of a conductor region 71 and an insulator region 70 surrounding the outside thereof. Alternatively, only the conductor region 71 may be provided. The shape and arrangement of the plurality of split electrodes 31 and 33 can be variously modified as will be described later.

The electrode mounting plate 34 includes a plurality of gas injection holes 32. The plurality of gas injection holes 32 are arranged in the longitudinal direction at regular intervals between the plurality of capacitive coupling electrodes 31 and 33. The electrode mounting plate 34 may be made of a metal, a nonmetal, or a mixed material thereof. When the electrode mounting plate 34 is made of a metal material, the electrode mounting plate 34 has an electrically insulating structure between the plurality of capacitive coupling electrodes 31 and 33. The electrode mounting plate 34 is installed to constitute the upper surface of the body of the process chamber, but may be installed along the body sidewall of the process chamber to increase the plasma processing efficiency. Or it may be installed on both the upper surface and the side wall. Although not shown in detail, the electrode mounting plate 34 may include a cooling channel or a heating channel for proper temperature control.

4 is a view illustrating a gas supply unit configured on an electrode mounting plate.

Referring to FIG. 4, the gas supply unit 20 is installed on the multi split electrode assembly 30. The gas supply unit 20 includes a gas inlet 21 through which process gas is injected, one or more gas distribution plates 22, and a plurality of gas inlets 23. The plurality of gas injection holes 23 correspond to the plurality of gas injection holes 32 of the electrode mounting plate 34. The reaction gas input through the gas inlet 21 is evenly distributed by the one or more gas distribution plates 22 and through the plurality of gas inlets 23 and the corresponding gas injection holes 32, the body of the process chamber. It is sprayed evenly inside. Although not shown in the drawings, the gas supply unit 20 may include two or more separate gas supply channels to separate different gases and supply them into the body of the process chamber to increase plasma processing efficiency.

5 is a partial cross-sectional view showing a modification of a split electrode configured with a gas hole.

Referring to FIG. 5, in the split electrodes 31 and 33, a plurality of gas injection holes 73 may be configured along the length direction. Some gas injection holes 32-1 of the electrode mounting plate 34 are connected to the gas injection holes 73 of the capacitive coupling electrodes 31 and 33, and some of the gas injection holes 32-2 are not connected. . The gas supply unit 20 processes the first gas supply path through which the first gas is supplied into the body of the process chamber through some gas injection holes 32-1 and the other gas injection holes 32-2. It may have a second gas supply path for supplying a gas into the body of the chamber. The first and second gas supply paths of the gas supply unit 20 are configured to separately supply different types of process gases as independent gas supply paths. Although not specifically illustrated in the drawings, as another example, a single gas supply channel for supplying the reaction gas into the inside of the reactor body 11 is provided only through the gas injection holes 73 provided in the capacitive coupling electrodes 31 and 33. It is also possible. Alternatively, the first and second gas supply paths may be supplied with the same kind of process gas.

6 and 7 are cross-sectional views of a split electrode with a source target.

Referring to FIG. 6, the split electrodes 31 and 33 may include a source target for physical vapor deposition. The split electrodes 31 and 33 may include a capacitive coupling electrode 97 and a source target cover 96 mounted to the outside of the capacitive coupling electrode 97. The source target cover 96 preferably has a replaceable mounting structure. The material of the source target cover 96 may be selected as a necessary material according to the deposition process. That is, all the source target covers 96 mounted on the plurality of split electrodes 31 and 33 may be configured of the same material or include different materials. For example, in the semiconductor manufacturing process, aluminum, titanium, titanium nitride, cobalt silicide, copper silicide, and copper seed layers for copper plating may be widely used in a metal film forming process. Alternatively, it is possible to deposit a nonconductive thin film using a nonconductive material. As such, various kinds of target materials such as metals, alloys, oxides, nitrides, carbides, and the like may be used, and multiple configurations using different materials may be used. As a modification of the split electrodes 31 and 33, as shown in FIG. 7, the target electrodes 98 may serve as a function of a source target and a function of a capacitive coupling electrode. When the electrode mounting plate 34 is made of a metal material, it is preferable to provide an insulating layer 95 for electrical insulation between the plurality of capacitive coupling electrodes 31 and 33.

8 to 10 are views showing a modification in which a magnet is mounted on the split electrode.

8 and 9, the split electrodes 31 and 33 may include one or more magnets 99. For example, one or more magnets 99 may be mounted to the capacitive coupling electrode 97 in the longitudinal direction. The magnet 99 is composed of a permanent magnet, but may be composed of an electromagnet. Thus, by arranging permanent magnets or electromagnets in the split electrodes 31 and 33, the ionization efficiency can be increased and the sputtering efficiency can be increased. As shown in FIG. 10, the magnet 99 is installed in the same manner even when the source target units 31 and 33 are configured as the target electrode 98 which also functions as the source target and the capacitive coupling electrode. It is possible.

11 is a view illustrating various modified structures of a split electrode.

First, as shown in (a) of FIG. 11, the split electrodes 31 and 33 may have a barrier structure, the cross section of which may have a 'T' type structure, and the head of the split electrodes 31 and 33 may have an electrode mounting plate 34. It can be installed to be fixed to the reverse or vice versa. As shown in FIG. 11B, the split electrodes 31 and 33 may have a plate-like structure having a narrow width. As shown in (c) or (d) of FIG. 11, the split electrodes 31 and 33 may have a triangular or inverted triangular structure thereof. As shown in (e) to (g) of Figure 11, it may have a cylindrical rod-shaped structure, a divided ellipse structure or a rod-shaped structure of a standing ellipse structure. As described above, the split electrodes 31 and 33 may be modified in various structures such as a circular, elliptical, and polygonal structure.

12 to 22 illustrate various modifications of the planar structure and the planar array structure of the split electrodes.

First, as shown in FIG. 12, the plurality of constant voltage electrodes 33 and the plurality of negative voltage electrodes 31 constituting the plurality of split electrodes 31 and 33 are alternately arranged with each other, Gas injection holes 32 may be arranged. As shown in FIG. 13 or 14, the plurality of constant voltage electrodes 33 and the negative voltage electrodes 31 have the same electrodes arranged in the same column (or row) in a structure divided into predetermined lengths (see FIG. 13), or different electrodes. This structure may be alternately arranged (see FIG. 14). As shown in FIG. 15 or 16, the plurality of split electrodes 31 and 33 may be configured of a plurality of square or circular flat area electrodes arranged in a matrix form. As shown in FIG. 17, the plurality of split electrodes 31 and 33 may have a columnar structure such as a cylinder. As shown in FIGS. 18 to 31, the plurality of split electrodes 31 and 33 may have a flat plate spiral structure or a concentric circle structure arranged alternately with each other. In this structure, the plurality of split electrodes 31 and 33 may be composed of only one constant voltage electrode 33 and negative voltage electrode 31. Alternatively, a plurality of constant voltage electrodes 33 and negative voltage electrodes 31 may be formed, but the overall arrangement may have a flat spiral structure or a concentric circle structure.

As described above, the plurality of split electrodes 31 and 33 may have one or more structures selected from a barrier structure, a flat structure, a protrusion structure, a pillar structure, a concentric or annular structure, a spiral structure, and a linear structure. The arrangement of the plurality of constant voltage electrodes 33 and the negative voltage electrodes 31 may also be performed in various arrangements such as an alternating linear arrangement, a matrix arrangement, an alternate spiral arrangement, and an alternate concentric arrangement. It may have one or more array structures selected from the structure. Although not illustrated in detail, an insulating layer may be formed between the plurality of split electrodes 31 and 33.

23 is a view showing a bias structure of the support.

Referring to FIG. 23, a support 206 for supporting the substrate 13 to be processed is provided in the process chambers 210, 220, and 230. The support 206 is connected and biased to the bias power sources 42 and 43. For example, two bias power sources 42 and 43 that supply different radio frequency power are electrically connected to and biased through the impedance matcher 44 to the support 206. The dual bias structure of the support 206 facilitates plasma generation inside the reactor body 11, and further improves plasma ion energy control to improve process yield. Alternatively, it may be modified to a single bias structure. Alternatively, the support 206 may be modified to have a zero potential without supplying bias power. The substrate support 206 may include an electrostatic chuck. Alternatively, the substrate support 206 may include a heater.

The support 206 may be implemented in a structure movable in parallel with the substrate 13. A drive mechanism 4 for moving the support 206. For example, a movement means of the conveyor structure by a plurality of transfer rollers 202 for movement may be provided under the support 206. Alternatively, the support 206 may be installed in a fixed type. An exhaust baffle 6 may be configured under the body of the process chamber for uniform exhaust.

24 is a diagram illustrating a configuration of a power supply system.

Referring to FIG. 24, the power supply system 300 includes a plurality of main power sources 40 for driving the multiple split electrode assemblies 30 respectively installed in the plurality of process chambers 210, 220, and 230. . The plurality of main power sources 40 may have different power and frequency depending on the substrate processing process. In addition, the plurality of main power sources 40 may drive at least two of the multiple split electrode assemblies 30 respectively installed in the plurality of process chambers 210, 220, and 230. The radio frequency power generated from the main power supply 40 is supplied to the plurality of capacitively coupled electrodes 31 and 33 provided in the multiple split electrode assembly 30 through the impedance matcher 41 and the distribution circuit 50. . Although all of the plurality of process chambers 210, 220, 230 may be process chambers with multiple split electrode assemblies 30, some process chambers may not be provided.

The plurality of split electrodes 31 and 33 are driven by receiving the radio frequency power generated from the main power supply 40 through the impedance matcher 41 and the distribution circuit 50, and thus the capacitance inside the body of the process chamber. The combined plasma is induced. The main power supply 40 may be configured using a radio frequency generator capable of controlling the output power without a separate impedance matcher. The radio frequency power generated from the main power supply 40 is provided to the plurality of split electrodes 31 and 33 through the impedance matcher 41. To this end, a distribution circuit 50 may be provided. The distribution circuit 50 distributes and supplies the radio frequency power provided from the main power supply 40 to the plurality of split electrodes 31 and 33 so that the plurality of split electrodes 31 and 33 are driven in parallel. Preferably, distribution circuit 50 may include a current balancing circuit. The current balancing circuit automatically balances the currents supplied to the plurality of split electrodes 31 and 33. Therefore, not only the large area plasma can be generated by the plurality of split electrodes 31 and 33, but also the current is automatically balanced in parallel driving of the plurality of split electrodes 31 and 33 so that the large area plasma can be viewed. It can be generated and maintained uniformly.

25 is a diagram illustrating an example of a distribution circuit.

Referring to FIG. 25, the distribution circuit 50 includes a current balancing circuit composed of a plurality of transformers 52 that drive the plurality of split electrodes 31 and 33 in parallel and balance the current. The primary side of the plurality of transformers 52 is connected in series between the power input terminal to which the radio frequency is input and the ground through the impedance matcher 41, and one end of the secondary side corresponds to the plurality of split electrodes 31 and 33. Connected and the other end is commonly grounded. The plurality of transformers 52 equally divide the voltage between the power input terminal and the ground, and output the divided plurality of divided voltages to the corresponding constant voltage electrode 33 among the plurality of split electrodes 31 and 33. The negative voltage electrode 31 is commonly grounded among the plurality of split electrodes 31 and 33.

Since the current flowing to the primary side of the plurality of transformers 52 is the same, the power supplied to the plurality of constant voltage electrodes 33 is also the same. When the impedance of any one of the plurality of split electrodes 31 and 33 is changed to change the amount of current, the plurality of transformers 52 may interact with each other to achieve a current balance. Therefore, the current supplied to the plurality of split electrodes 31 and 33 is continuously and automatically adjusted uniformly. In the plurality of transformers 52, the winding ratios of the primary side and the secondary side are basically set to 1: 1, but this can be changed.

Although not shown in the drawing, the distribution circuit 50 including the current balancing circuit as described above may include a protection circuit for preventing a transient voltage from occurring in the plurality of transformers 52. The protection circuit prevents the transient voltage from increasing in the transformer due to a defect such as when one of the plurality of transformers 52 is electrically open. The protection circuit of this function may be implemented by connecting a varistor to both ends of each primary side of the plurality of transformers 52, or may be implemented by using a constant voltage diode such as a Zener diode. . In addition, a compensation circuit such as a compensation capacitor 51 for compensating for leakage current may be added to each transformer 52 in the distribution circuit 50.

26 to 28 show various modifications of the distribution circuit.

Referring to FIG. 26, one variation of the distribution circuit 50 includes an intermediate tab 53 with the secondary sides of the plurality of transformers 52 grounded respectively. Here, one end of the secondary side outputs a constant voltage and the other end of a negative voltage. The constant voltage is provided to the constant voltage electrode 33 of the plurality of split electrodes and the negative voltage is provided to the negative voltage electrode 31 of the plurality of split electrodes.

With reference to FIGS. 27 and 28, another variant distribution circuit 50 may include a voltage level adjustment circuit 60 that can vary the current balancing adjustment range. The voltage level adjustment circuit 60 includes a coil 61 having a multi tap and a multi tap switching circuit 62 for connecting one of the multi taps to ground. The voltage level regulating circuit 60 applies a voltage level variable according to the switching position of the multi-tap switching circuit 62 to the distribution circuit 50, and the distribution circuit 50 is provided by the voltage level regulating circuit 60. The current balance adjustment range is varied by the voltage level determined.

29 shows a continuous substrate processing system according to a second embodiment of the present invention.

Referring to FIG. 29, the continuous substrate processing system 200 according to the second embodiment of the present invention is basically the same as the above-described first embodiment, and thus repeated descriptions thereof will be omitted. The continuous substrate processing system 200 of the second embodiment includes a laser source 800 for constructing multiple laser scanning lines into a plurality of process chambers 210, 220, 230. Although all of the plurality of process chambers 210, 220, and 230 may be configured with multiple laser scanning lines, only some process chambers may be provided.

30 to 32 are views for explaining various configuration methods of the multi-laser scanning line.

30-32, the body 11 of the process chamber has laser transmission windows 86, 87 for scanning a laser beam therein. The laser transmissive windows 86, 87 may be comprised of two windows 86, 87 configured to face the sidewalls of the body 11. The two windows 86 and 87 are installed to face each other on the body 11, and may have a slit structure having the same length. The laser source 800 includes one or more laser sources 84. The laser source 84 scans a laser beam into the reactor body 11 through the laser transmission windows 86 and 87 to form a plurality of laser scan lines 82 inside the body 11 to form a multi-laser scanning line. Configure.

For example, as shown in FIG. 30, a plurality of laser sources 84 are arranged in proximity to the laser transmission window 86 on one side, and correspondingly, a plurality of laser sources 84 in proximity to the laser transmission window 87 on the other side. Laser terminations 85 may be configured. Alternatively, as shown in FIG. 31, a plurality of laser sources 84 are configured at intervals and a plurality of reflectors 83 are disposed therebetween so that the laser beams generated from the laser sources 84 are separated by two laser transmission windows. The plurality of laser scanning lines 82 can be formed by reciprocating and reflecting the semiconductors 86 and 87 therebetween. Alternatively, as shown in FIG. 32, only one laser source 84 may be configured and a plurality of reflectors 83 may be configured.

As such, the multi-laser scanning line may be configured inside the body 11 using one or more laser sources 84, a plurality of reflectors 83, and one or more laser terminations 85. In this case, the plurality of laser scan lines 82 may be disposed between the plurality of split electrodes 31 and 33 and aligned with the plurality of gas injection holes 32. However, other various methods may be used to form the laser scanning line. And although a more detailed configuration and description has been omitted, those skilled in the art will appreciate that an optical system of a suitable structure can be used to scan the laser beam into the body 11.

33 is a view for explaining various relative arrangement methods of a multi-laser scanning line and a split electrode.

As shown in FIG. 33A, a multi-laser scanning line composed of a plurality of laser scan lines 82 may have a structure positioned in an electric field formed between the plurality of split electrodes 31 and 33. Alternatively, as shown in (b) of FIG. 33, the multi-laser scanning line may have a structure positioned between the plurality of split electrodes 31 and 33 and the support 206 inside the body 11. Alternatively, as shown in (c) of FIG. 33, the multi-laser scanning line has a structure positioned between the gas injection hole 32 for introducing the reaction gas into the body 11 and the plurality of split electrodes 31 and 33. In this case, the plurality of split electrodes 31 and 33 are spaced apart from the electrode mounting plate 34 at regular intervals.

The relative arrangement structure of the multi-laser scanning line and the plurality of split electrodes 31 and 33 is about which reaction gas first receives energy. That is, as illustrated in FIG. 33A, the reaction gas introduced into the body 11 receives the electrical energy by the split electrodes 31 and 33 and the thermal energy by the multi-laser scanning line. Can take the structure. Alternatively, as illustrated in (b) of FIG. 33, the reaction gas introduced into the body 11 may take the structure of first receiving electrical energy transferred from the plurality of split electrodes 31 and 33. Alternatively, as illustrated in (c) of FIG. 33, the reaction gas introduced into the body 11 may take the structure of first receiving thermal energy by the multi-laser scanning line.

The relative arrangement structure of the multi-laser scanning line and the plurality of split electrodes 31 and 33 may be used in combination of one or more structures, and for this purpose, the laser source 84 and the reflector constituting the laser source 80 may be used. The structure and arrangement of the laser termination portion 85 can be modified as appropriate.

Although the plurality of process chambers 210, 220, and 230 configured in the continuous substrate processing system 200 of the present invention have a structure in which the multi-division electrode assembly 30 is installed at an upper portion, the process chambers 210, 220, and 230 may be modified in a structure installed at a lower portion thereof. Can be. In this case the exhaust baffle 6 and the gas outlet 3 will be configured at the top, and the multiple split electrode assembly 30 and the gas supply 20 will be configured at the bottom.

As described above, the continuous substrate processing system 200 of the present invention may be processed such as a wafer substrate, a glass substrate, a plastic substrate, or the like for manufacturing various semiconductor devices such as a semiconductor integrated circuit device, a flat panel display device, a solar cell, and the like. For continuous processing of substrates. The continuous substrate processing system 200 is, for example, a single junction a-Si: H thin film solar cell as shown in FIGS. 34 and 35 or an nc-Si: H thin film solar cell as shown in FIG. 36. Perform the substrate processing process. Alternatively, a substrate treatment process for fabricating a stacked solar cell using a-Si: H as shown in FIG. 37 is performed. In order to perform such a continuous substrate processing process, a plurality of process chambers 210, 220, and 230 of the continuous substrate processing system 200 may have an appropriate arrangement structure according to a process sequence for substrate processing of a substrate to be processed.

38-43 are diagrams illustrating various configuration methods of the continuous substrate processing system.

38 and 39, a plurality of process chambers 210, 220, 230 are continuously arranged between the load chamber 100 and the unload chamber 110 disposed to face each other. The load chamber 100 is loaded with a substrate 102 before processing, and the substrate processing step by step is performed while the plurality of process chambers 210, 220, and 230 are successively processed, and finally the unload chamber 110 is processed. The feature substrate 112 is unloaded. The load chamber 100 and the unload chamber 110 are provided with actuators 104 and 114 for handling the substrate to be processed, respectively.

As shown in FIG. 38, the substrate to be processed may be sequentially processed according to a sequence of arrangement of the plurality of process chambers 210, 220, and 230. Alternatively, as illustrated in FIG. 39, a repeated substrate treating process may be performed in a process chamber of a predetermined section. That is, two or more substrates can be processed in one or more process chambers with respect to the same to-be-processed substrate by reversing several steps again in the advancing direction. For example, a process of repeatedly forming the p-layer, the i-layer, and the n-layer in order to manufacture a stacked solar cell as shown in FIG. 37 can be performed in this way.

As shown in FIG. 40, the plurality of process chambers 210, 220, and 230 may be arranged in a U shape so that the load chamber 100 and the unload chamber 110 are configured on the same side. At this time, the rotation section 130 may be provided with a transport means for circulating the substrate to be processed without a separate process chamber is installed. Alternatively, the process chamber may be arranged in the rotation section. Alternatively, as shown in FIG. 41, the plurality of process chambers 210, 220, and 230 arranged between the load chamber 100 and the unload chamber 110 may have an arrangement structure circulated in any section.

As such, the plurality of process chambers 210, 220, and 230 may have various arrangements, and as shown in FIG. 42, may have a structure arranged in a circle. In addition, the plurality of process chambers 210, 220, and 230 may be installed in a non-horizontal state, for example, a vertically progressing structure as well as a structure in which the substrate proceeds horizontally. The continuous substrate processing system as described above may be modified in a roll-to-roll manner for treating the continuous target object as well as the above-described embodiment.

The embodiment of the continuous substrate processing system of the present invention described above is merely exemplary, and it is well understood that various modifications and equivalent other embodiments are possible to those skilled in the art to which the present invention pertains. You will know. Accordingly, it is to be understood that the present invention is not limited to the above-described embodiments. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims. It is also to be understood that the present invention includes all modifications, equivalents, and substitutes within the spirit and scope of the invention as defined by the appended claims.

The continuous substrate processing system of the present invention can be very usefully used in substrate processing processes for forming various thin films such as semiconductor integrated circuit fabrication, flat panel display fabrication, and solar cell fabrication. In particular, the continuous substrate processing system of the present invention can generate a large area of plasma uniformly by a plurality of split electrodes, thereby enabling substrate processing on a more uniform large area to be processed substrate, and a plurality of multi-pronged electrode assemblies. In the parallel driving of the plurality of split electrodes provided therein, the current balance is automatically achieved, so that the plasma of a large area can be generated and maintained more uniformly, thereby obtaining very high productivity. In addition, it is easy to construct an efficient system suitable for a substrate processing process sequence of a substrate to be processed.

1 shows a continuous substrate processing system according to a first embodiment of the present invention.

2 illustrates a multiple split electrode assembly.

3 is a cross-sectional view of the split electrode.

4 is a view illustrating a gas supply unit configured on an electrode mounting plate.

5 is a partial cross-sectional view showing a modification of a split electrode configured with a gas hole.

6 and 7 are cross-sectional views of a split electrode with a source target.

8 to 10 are views showing a modification in which a magnet is mounted on the split electrode.

11 is a view illustrating various modified structures of a split electrode.

12 to 22 illustrate various modifications of the planar structure and the planar array structure of the split electrodes.

23 is a view showing a bias structure of the support.

24 is a diagram illustrating a configuration of a power supply system.

25 is a diagram illustrating an example of a distribution circuit.

26 to 28 show various modifications of the distribution circuit.

29 shows a continuous substrate processing system according to a second embodiment of the present invention.

30 to 32 are views for explaining various configuration methods of the multi-laser scanning line.

33 is a view for explaining various relative arrangement methods of a multi-laser scanning line and a split electrode.

34 to 37 are views illustrating various structures of the solar cell.

38-43 are diagrams illustrating various configuration methods of the continuous substrate processing system.

* Description of the symbols for the main parts of the drawings *

3: gas outlet 4: drive mechanism

6: exhaust baffle 10: plasma reactor

11: reactor body 12: support

13: substrate to be processed 20: gas supply part

21: gas inlet 22: gas distribution plate

23: gas inlet 24: gas supply pipe

25: gas control valve 26: gas injection hole

30: multiple split electrode assembly 31, 33: split electrode

32: gas injection hole 34: electrode mounting plate

40: main power source 41: impedance matcher

42, 43: bias power source 44: impedance matcher

50: distribution circuit 51: compensation capacitor

52: transformer 53: middle tap

60: voltage level regulating circuit 61: coil

62: multi-tap switching circuit 70: insulator region

71: conductor region 73: gas injection hole

80: laser source 82: multi laser scanning line

83: reflector 85: laser termination

100: load chamber 110: unload chamber

200: continuous substrate processing system 202: feed roller

204: substrate entrance 206: substrate support

210, 220, 230: process chamber

Claims (37)

A plurality of process chambers arranged in series for performing a continuous substrate processing process on the substrate to be processed; A multiple split electrode assembly having a plurality of split electrodes for inducing plasma discharge in the plurality of process chambers; And A distribution circuit for distributing current to the plurality of split electrodes of the multiple split electrode assembly, wherein the distribution circuit comprises a current balance circuit for adjusting a balance of current supplied to the plurality of split electrodes of the multiple split electrode assembly; Continuous substrate processing system comprising. The method of claim 1, And a load chamber connected to a continuous arrayed front end of said plurality of process chambers and an unload chamber connected to a rear end. The method of claim 2, And the load chamber and the unload chamber have either a structure facing each other or a structure not facing each other. The method of claim 1, Wherein the plurality of process chambers comprises one or more process chambers that perform two or more substrate processing processes on the same substrate. The method of claim 1, And the plurality of process chambers include an arrangement structure in which one to-be-processed substrate repeats at least two or more process chambers so as to perform two or more substrate processing processes on the same to-be-processed substrate in a circulation section. The method of claim 1, And the plurality of process chambers and the multi-division electrode assembly are configured such that the substrate is processed in either the horizontal or non-horizontal state of the substrate to be processed. The method of claim 1, And a plurality of main power sources for driving multiple split electrode assemblies respectively installed in the plurality of process chambers. The method of claim 7, wherein The plurality of main power sources includes a common main power source for driving at least two of the plurality of divided electrode assemblies respectively installed in the plurality of process chambers. delete The method of claim 8, And an impedance matcher configured between the main power supply and the distribution circuit to perform impedance matching. delete The method of claim 1, The current balancing circuit includes a plurality of transformers for driving the plurality of split electrodes in parallel to balance the current. A primary side of the plurality of transformers is connected in series, and a secondary side thereof is connected to correspond to the plurality of split electrodes. The method of claim 12, The secondary sides of the plurality of transformers each include a grounded middle tap, and one end of the secondary side outputs a constant voltage and the other end of a negative voltage, respectively. And the constant voltage is provided to the constant voltage electrodes of the plurality of split electrodes, and the negative voltage is provided to the negative voltage electrodes of the plurality of split electrodes. The method of claim 12, And the current balancing circuit includes a voltage level adjusting circuit capable of varying a current balancing adjusting range. The method of claim 12, And the current balancing circuit comprises a compensation circuit for compensating for leakage current. The method of claim 12, The current balancing circuit includes a protection circuit for preventing damage caused by a transient voltage. The method of claim 1, The multiple split electrode assembly includes an electrode mounting plate on which the plurality of split electrodes are mounted. The method of claim 17, The electrode mounting plate includes a plurality of gas injection holes, And a gas supply unit supplying a process gas into the process chamber through the gas injection hole. The method of claim 18, Said gas supply comprising at least two separate gas supply channels for separate gas supply. The method of claim 17, The plurality of split electrodes each includes a plurality of gas injection holes. The method of claim 1, And the plurality of process chambers includes at least two process chambers having a common exhaust structure. The method of claim 1, And a support for supporting a substrate to be processed in the plurality of process chambers, wherein the support is either biased or unbiased. The method of claim 22, And the support is biased by a single frequency power supply or two or more different frequency power supplies. The method of claim 22, And the support includes an electrostatic chuck. The method of claim 22, And the support comprises a heater. The method of claim 22, The support has a structure that is movable like a substrate to be processed, And a drive mechanism for moving said support. The method of claim 1, And the plurality of split electrodes comprises a conductor region and an insulator region. The method of claim 1, And wherein the multiple split electrode assembly comprises an insulating layer formed between the plurality of split electrodes. The method of claim 1, And the split electrode includes a target electrode that functions as a source target and a capacitive coupling electrode. 30. The method of claim 29, And the target electrode comprises one or more magnets. The method of claim 1, And the split electrode includes a capacitive coupling electrode and a source target cover mounted to the outside of the capacitive coupling electrode. The method of claim 31, wherein And the capacitively coupled electrode comprises one or more magnets. The method of claim 1, The plurality of split electrodes includes a plurality of constant voltage electrodes and a plurality of negative voltage electrodes, The array structure of the constant voltage electrode and the negative voltage electrode may include at least one array structure selected from an alternating linear array structure, a matrix type array structure, an mutually alternate spiral array structure, and an alternate alternating concentric array structure. system. 34. The method of claim 33, And the plurality of constant voltage electrodes and the plurality of negative voltage electrodes include one or more structures selected from a barrier structure, a plate structure, a protrusion structure, a pillar structure, an annular structure, a spiral structure, and a linear structure. The method of claim 1, And a laser source for constructing a multi-laser scanning line comprising a plurality of laser scan lines in at least one of said plurality of process chambers. 36. The method of claim 35 wherein The at least one process chamber includes a laser transmission window for scanning a laser beam therein; And the laser source comprises one or more laser sources for causing a laser beam to be scanned through the laser transmission window into the at least one process chamber to form the multi laser scanning line. The method of claim 36, The laser transmission window comprises two oppositely configured windows, And the laser source comprises a plurality of reflectors reflecting the laser beam generated from the one or more laser sources with the two windows interposed to form the multi laser scanning line.

Images