KR101952126B1 - Thin Film Deposition Apparatus, Plasma Generation Apparatus, And Thin Film Deposition Method - Google Patents

Abstract

The present invention provides a thin film deposition apparatus, a plasma generation apparatus, and a thin film deposition method. This thin film deposition apparatus includes a vacuum container. The thin-film deposition apparatus includes a plurality of ground electrodes, a power supply electrode disposed between the ground electrodes and disposed opposite to the ground electrode, a first gas supplied between the ground electrode and the power supply electrode through the first gas supply line, A reaction zone that interacts with the plasma using a second gas supplied through the second gas supply line through the ground electrode and a substrate holder disposed in the reaction zone, A thin film is formed on the disposed substrate.

Description

(Thin Film Deposition Apparatus, Plasma Generation Apparatus, and Thin Film Deposition Method)

The present invention relates to a thin film deposition apparatus, and more particularly, to a multi-electrode thin film deposition apparatus using a plurality of electrodes.

The high-frequency plate-type capacitively coupled plasma apparatus has limitations in process uniformity and process speed.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a thin film deposition apparatus for forming a thin film of good quality by spraying a reactive gas and an evaporation source gas in different regions.

A thin film deposition apparatus according to an embodiment of the present invention includes a vacuum container. The thin film deposition apparatus includes a plurality of ground electrodes; A power supply electrode disposed between the ground electrodes and arranged to face the ground electrode; A plasma region forming a plasma using a first gas supplied between the ground electrode and the power supply electrode through a first gas supply line; A reaction zone which interacts with the plasma through a second gas supply line and through a second gas supplied through the ground electrode; And a substrate holder disposed in the reaction region, wherein a thin film is formed on the substrate disposed on the substrate holder.

In one embodiment of the present invention, at least one first gas diffusion space for distributing the first gas provided through the first gas supply line to the plasma region; And at least one second gas diffusion space for distributing the second gas supplied through the second gas supply line to the reaction region.

In one embodiment of the present invention, the power distributing unit may further include a power distributing unit for distributing power supplied from the RF power source to the power supply electrode, and the power distributing unit may be disposed inside the vacuum container.

In one embodiment of the present invention, the first gas includes at least one of a hydrogen (H2) gas and an oxygen (O2) gas, and the second gas includes at least one of silane (SiH4), disilane ), Trisilane (Si3H8), tetraethylorthosilicate (TEOS), dichlorosilane (DCS), hexachlorosilane (HCD), tridimethylaminosilane (TriDMAS) and trisilylamine (TSA).

In one embodiment of the present invention, the gas distribution plate may further include a first gas diffusion space connected to the first gas supply line and a second gas diffusion space connected to the second gas supply line.

In one embodiment of the present invention, the power distributing unit may further include a power distributing unit for distributing the power supplied from the RF power supply to the power supply electrode. Wherein the power distributor comprises: a first wiring disposed on the second gas diffusion space and supplying and receiving power from an external RF power source; A second wiring which is disposed under the second gas diffusion space and receives power from the first wiring and redistributes the power; And a contact plug electrically connecting the first wiring and the second wiring through the second gas diffusion space.

In one embodiment of the present invention, the first wiring, the second wiring, and the contact plugs may have a coaxial cable structure.

In one embodiment of the present invention, the power supply electrode may extend in parallel in the first direction.

In one embodiment of the present invention, the gas distribution plate includes an upper gas distribution plate and a lower gas distribution plate disposed below the upper gas distribution plate, wherein the lower surface of the upper gas distribution plate or the lower gas distribution plate A depression formed in the upper surface of the plate forms the second gas diffusion space, the first diffusion space being disposed between the lower gas distribution plate and the ground electrode, and the first diffusion space extending in the first direction And extend in a second direction across the ground electrode.

In one embodiment of the present invention, a depression formed in the upper surface of the lower gas distribution plate and extending in a second direction across the power electrode, And a cover plate disposed on the depression to form a second gas diffusion space.

In an embodiment of the present invention, the ground electrode may be formed to protrude from the lower surface of the gas distribution plate or be mounted on the lower surface of the gas distribution plate.

In one embodiment of the present invention, the power supply electrode may further include insulators interposed between the power supply electrode and the gas distribution plate and extending in parallel with the power supply electrode.

In one embodiment of the present invention, a plurality of first nozzles connected to the first gas diffusion space and injecting gas to a lower portion of the gas distribution plate; And a plurality of second nozzles connected to the second gas diffusion space and injecting gas to a lower portion of the gas distribution plate.

In one embodiment of the present invention, the power distribution unit is disposed outside the vacuum container, and the power distribution unit includes a power distribution unit that distributes power supplied from the RF power source to the power supply electrode, Lt; / RTI > structure.

A thin film deposition apparatus according to an embodiment of the present invention includes: a plurality of ground electrodes arranged side by side on a vacuum container upper plate; A power supply electrode disposed between the ground electrodes; Wherein the plurality of ground electrodes and the power supply electrodes are alternately formed, and the first nozzle supplies a first gas between the power supply electrode and the ground electrode; And a second nozzle which is formed alternately with the first nozzle and in which a second gas different from the first gas is injected through the ground electrode.

In one embodiment of the present invention, the vacuum vessel top plate includes a first gas diffusion space connected to the first gas supply line and a second gas diffusion space connected to the second gas supply line, wherein the first gas and the second And a gas distribution plate for supplying gas.

In one embodiment of the present invention, the plasma display apparatus may further include a power distributor for forming plasma by external RF power supplied to the power electrode and supplying power to the power electrode.

A plasma generating apparatus according to an embodiment of the present invention includes: a plurality of ground electrodes provided in a first direction and a second direction, which correspond to a plane of a substrate, A power supply electrode disposed between the adjacent ground electrodes and arranged to face the ground electrode; And a power distributing unit that receives power from the RF power source and distributes the power to the power supply electrode, the power distributing unit being disposed in a third direction perpendicular to the first direction and the second direction, And a second nozzle for supplying a second gas to a side closer to the substrate may be disposed.

In one embodiment of the present invention, the first gas forms a plasma between the power supply electrode and the ground electrode, and the ladder formed by the plasma and the plasma reacts with the second gas to form a thin film Can be formed.

In an embodiment of the present invention, the second gas may not be directly injected to the power supply electrode.

According to an embodiment of the present invention, there is provided a plasma generator comprising: a plurality of power supply electrodes disposed at a lower end of an upper plate of a vacuum chamber; Ground electrodes disposed on both sides of the power supply electrode; A first nozzle positioned at a lower end of the upper plate with respect to an upper plate of the vacuum container and injecting a first gas; And a second nozzle for injecting a second gas through the ground electrode protruding from the lower end of the upper plate. The injection position of the first gas and the injection position of the second gas may be different from each other.

In an embodiment of the present invention, the distance between the first nozzle and the substrate may be greater than the distance between the second nozzle and the substrate.

According to an embodiment of the present invention, there is provided a thin film deposition method comprising: distributing electric power to a plurality of power electrodes by receiving power from an RF power source; Providing a first gas between a power electrode and a ground electrode disposed opposite to both sides of the power electrode; Forming a plasma using a first gas supplied between the ground electrode and the power supply electrode through a first gas supply line; Supplying a second gas to a reaction region that interacts with the plasma using a second gas supply line and a second gas supplied through the ground electrode; And forming a thin film on the substrate disposed in the reaction region.

In an embodiment of the present invention, the second gas may not be directly injected to the power supply electrode.

In the thin film deposition according to an embodiment of the present invention, a high quality thin film can be formed by separating the plasma region and the reaction region using a linear multiple electrode.

1 and 2 are views illustrating a thin film deposition apparatus according to one embodiment of the present invention.
3 is a conceptual diagram illustrating a thin film deposition apparatus 100c according to another embodiment of the present invention.
4A is a plan view illustrating a thin film deposition apparatus according to another embodiment of the present invention.
4B to 4E are cross-sectional views taken along lines II ', II-II', III-III ', and IV-IV' of FIG. 4A, respectively.
5A is a plan view illustrating a thin film deposition apparatus according to another embodiment of the present invention.
5B to 5D are cross-sectional views taken along line I-I ', line II-II' and line III-III ', respectively, of FIG. 5A.
6 is a plan view illustrating a thin film deposition apparatus according to another embodiment of the present invention.
7 is a view for explaining a thin film deposition apparatus according to another embodiment of the present invention.
8 to 10 are conceptual diagrams illustrating a thin film deposition apparatus according to still another embodiment of the present invention.
11 and 12 are views illustrating a thin film deposition apparatus according to another embodiment of the present invention.

Plasma Enhanced Chemical Vapor Deposition (PECVD) is typically used to deposit polycrystalline or amorphous silicon thin films, typically using hydrogen (H ₂ ) gas and silane (SiH ₄ ) gas. In PECVD, a silicon-containing gas, SiH ₄ gas, is diluted to a concentration of a few percent in hydrogen (H ₂ ) gas. Further, as the concentration of hydrogen increases, the crystallinity of silicon tends to increase.

In parallel plate type capacitively coupled plasma, the upper active electrode acts as a gas injection structure. The gas injection structure simultaneously supplies the reactive gas (H ₂ ) and the deposition source gas (SiH ₄ ). When the plasma density is increased to sufficiently dissociate the reactive gas, the deposition source gas is excessively dissociated. Therefore, the deposition rate and the deposition uniformity are limited.

Remote plasma CVD processes can suppress damage caused by plasma and can be used for thin film deposition. The remote plasma CVD process requires two types of gases. One produces a plasma with a reactive gas. The reactive gas is decomposed, ionized, excited, or activated. The other gas is the deposition source gas, and the deposition source gas reacts with active species (radiacls) or excited spices to form a thin film. For example, in the case of silicon deposition, a reactive gas mainly uses hydrogen (H ₂ ) gas, and a silane (SiH ₄ ) gas is mainly used as a deposition source gas. Further, in the case of silicon oxide film deposition, the reactive gas may be oxygen and the deposition source gas may be SiH ₄ . A silicon nitride film or the like can be similarly formed.

When a remote plasma silicon CVD process is used, a H ₂ gas is used to form a plasma, and the plasma formed forms a monomolecular radical (H *) required for the deposition film. The monomagnetic hydrogen radical (H ^* ) formed is fed into the down stream region. SiH ₄ gas is implanted into the downstream region close to the substrate, and the SiH ₄ gas can be decomposed to become activated material (SiH 3 ^* ) with the help of the radical (H ^* ) supplied from the plasma.

In a remote plasma CVD process, when the SiH ₄ gas is overexposed to the plasma by back flow, the SiH ₄ gas may become SiH ₂ , SiH, SiH ₃ +, SiH ₂ +, SiH +, etc. . In order to suppress reverse flow, radicals including monomagnetic hydrogen radicals (H ^* ) are extracted using a mesh or the like, and extracted monomolecular hydrogen radicals (H ^* ) and injected SiH ₄ gas The energy efficiency is remarkably lowered. In addition, remote plasma has difficulty in large-sizing.

Accordingly, there is a need for a technique for forming a large-area plasma while properly separating a plasma space in which H ₂ gas is used and a reaction space in which SiH ₄ gas is injected to react with the plasma.

A deposition method according to an embodiment of the present invention includes a plurality of plasma spaces forming a plasma using a reactive gas (e.g., H ₂ ), a plasma formed and a deposition source gas (e.g., SiH ₄ ) The reaction space is separated from each other. Thus, the degree of process freedom and the process margin can be improved.

According to an embodiment of the present invention, a silicon thin film can be deposited by locally forming a high-density plasma using a plurality of linear electrodes and spraying an evaporation source gas (for example, SiH ₄ ) in a downstream region. For example, the deposition source gas is supplied through a protruded ground electrode that is not powered. Thus, back flow into the plasma space of the deposition source gas can be suppressed. Thus, the plasma does not over-decompose the deposition source gas. Therefore, high-quality large-area high-speed thin film deposition is possible.

In a solar cell process using polysilicon, a high growth rate of the polysilicon and a low lattice defect density are required. Therefore, a polysilicon plasma deposition apparatus having a small lattice defect density, a high growth rate, and a process uniformity is the most important problem of a thin film solar cell.

An increase in the driving frequency of the capacitively coupled plasma can reduce the ion bombardment energy, increase the electron density, and reduce the electron temperature. However, as the driving frequency increases, the standing wave effect increases and the plasma uniformity may decrease. Therefore, a method of obtaining a high density uniform plasma at a driving frequency of 13. 56 Mhz or more is required.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments disclosed herein are being provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. In the drawings, the components have been exaggerated for clarity. Like numbers refer to like elements throughout the specification.

1 is a view for explaining a thin film deposition apparatus according to an embodiment of the present invention.

Referring to FIG. 1, the thin film deposition apparatus 100a includes a vacuum container.

The thin film deposition apparatus 100a includes a plurality of ground electrodes 120, a power supply electrode 110 disposed between the ground electrodes 120 and disposed opposite to the ground electrode 110, a first gas supply line 163 A plasma region 107 forming a plasma using a first gas supplied between the ground electrode 120 and the power supply electrode 110 through the first gas supply line 164 and the second gas supply line 164, A reactive region 109 that interacts with the plasma using a second gas supplied through the substrate 120, and a substrate holder 106 disposed in the reactive region 109. A thin film is formed on the substrate 108 disposed on the substrate holder 106.

The vacuum container 102 may have a pressure lower than the atmospheric pressure. The vacuum container 102 may be a rectangular parallelepiped container. The vacuum container 102 may include a top plate 104. The vacuum container 102 may form a cavity 103.

Gas supply lines 163 and 164 and a gas discharge unit (not shown) may be disposed in the vacuum container 102. The gas supply lines 16 and 1643 may provide the process gas to the vacuum container 102 or the gas distribution plate 160. The gas exhaust unit may discharge the process gas and reaction by-products of the vacuum container 102 to the outside. The thin film deposition apparatus 100a may be formed on the substrate 108 with amorphous or polycrystalline silicon. The pressure of the vacuum container 102 may be several hundreds of milliTorr to several Torr.

The substrate 108 may be disposed on a substrate holder 106. The substrate holder 106 may be disposed opposite to the power supply electrodes 110. The substrate 108 may be spaced apart from the power supply electrodes 110 in parallel. The substrate 108 may be a semiconductor substrate, a glass substrate, or a dielectric substrate. The substrate 108 may be a rectangular substrate. The material deposited on the substrate 108 may be amorphous or polycrystalline silicon. The substrate holder 108 may include a heating unit (not shown). The heating unit may heat the substrate 108. The temperature of the substrate 108 may be ambient to 400 degrees Celsius. The substrate 108 or the substrate holder 106 may be electrically floated. The distance between the substrate 108 and the power electrode 110 may be several to several tens of centimeters (cm).

The upper plate 104 may be disposed on the upper surface of the vacuum container 102. The top plate 104 may be a metal. The top plate 104 may be aluminum or stainless steel. The upper plate 104 may have a rectangular plate shape. The upper plate 104 and the vacuum container 102 are in close contact with each other to maintain a vacuum. The upper plate 104 may include a through hole (not shown). A power supply line 149 is disposed in the through hole. The power supply line 149 is electrically connected to the power supply electrodes 110.

In the case of silicon deposition, the first gas supply line 163 may supply hydrogen (H ₂ ) gas to the first gas, and the second gas supply line 164 may supply silane (SiH 4) Trisilane (Si3H8), TEOS (Tetraethylorthosilicate), DCS (Dichlorosilane), HCD (Hexachlorosilane), TriDMAS (Tri-dimethylaminosilane) or TSA (Trisilylamine).

The first gas may further include an inert gas such as argon gas in addition to hydrogen gas. In addition, if doping is desired, the first gas may further include a B ₂ H ₆ gas or a PH ₃ gas.

The plasma region 107 may be an opposing space between the ground electrode 120 and the power source electrode 110. The first gas is supplied to the plasma region and the first gas is ionized by the plasma to generate an excited species and an active species. The plasma region 107 may extend along a first direction.

The electrons, ions, excited species, or active species (e.g., H ^* ) generated in the plasma region may react with the second gas in the reaction region 109. Specifically, the second gas may be decomposed into SiH ₃ by an active species (e.g., H ^* ). Subsequently, the SiH ₃ may be incident on the substrate 108 and adsorbed thereon. Then, by absorbing thermal energy from the substrate 108, H can be removed and a Si film can be deposited.

As the plasma region and the reaction region are separated, plasma exposure to the substrate is suppressed, ion damage is reduced, and charging of the substrate can be reduced. Thus, the occurrence of arcing around the substrate and the substrate can be reduced.

In addition, the substrate holder 106 may be grounded or poloted. Even when the substrate holder 106 is grounded, there is no great influence on the RF current flow, and a complicated mechanism for RF current flow such as a conventional parallel plate charge coupled plasma can be eliminated.

Unlike the conventional parallel plates capacitive coupled plasma deposition apparatus, the substrate holder of the deposition apparatus according to an embodiment of the present invention can be electrically floated. Even when the substrate holder 106 is grounded, plasma is mainly generated between the ground electrode 120 and the power source electrode 110. Thus, the substrate 108 may not be substantially directly exposed to the plasma. A thin film can be formed using a remote plasma while taking advantage of all the advantages of the conventional capacitive coupling plasma apparatus. Also, the driving frequency applied to the power supply electrode may be increased to 13.56 Mhz or more for high-density plasma. Further, the number of the power supply electrodes can be easily increased for the purpose of large-sized.

The substrate surface reaction and the spatial reaction in the reaction region can be variously modified, and the exact mechanism has not yet been known. However, SiH ₃ is known as an active species important for silicon deposition. Further, for doping, the B ₂ H ₆ gas or the PH ₃ gas may be supplied as the second gas.

In the case of the silicon oxide film deposition, the first gas supply line 163 can supply oxygen (O ₂ ) gas, N ₂ O gas, NO gas, or water vapor (H ₂ O) supply line 164 may supply the SiH ₄ gas to the second gas. The first gas may further include an inert gas such as argon gas in addition to the oxygen-containing gas.

In the case of silicon nitride film deposition, the first gas supply line 163 can supply NH ₃ gas or N ₂ gas as the first gas, and the second gas supply line 164 can supply SiH ₄ gas as the second gas have.

The gas distribution plate 160 may be mounted inside the vacuum container 102. The gas distribution plate 160 includes a first gas diffusion space 151 therein. The first gas diffusion space 151 may extend in a second direction transverse to the first direction to supply the first gas to all or a part of the region where the plasma is generated. The first gas diffusion space 151 may be divided into a plurality of spaces.

When the first gas diffusion space 151 is divided into a plurality of spaces, the first gas diffusion spaces 151 may be connected to each other.

The gas distribution plate 160 is divided into an upper gas distribution plate and a lower gas distribution plate, and depressions formed on the surfaces facing each other in the two plates can provide the second gas diffusion space 151.

The second gas diffusion space 152 may extend in the first direction and the second direction and may be formed in the gas distribution plate 160 or disposed inside the gas distribution plate 160. The second gas diffusion space 152 is preferably a single space, but may be divided into a plurality of spaces.

The gas distribution plate 160 may be formed of a conductor and may be grounded. The surface of the gas distribution plate 160 may be coated with a dielectric. For example, the gas distribution plate 160 may be formed of aluminum, and the surface may be treated with aluminum oxide. The gas distribution plate 160 may be mounted on the lower portion of the upper plate 104.

The power distribution unit 105 includes a power supply line 149, a first wiring 140, a second wiring 130, and a contact plug (not shown) for connecting the first wiring 140 and the second wiring 130, (190). The power distributor 105 may be embedded in the gas distribution plate 160.

When the power distributor 105 is embedded in the gas distributor 160, the number of power supply lines 149 passing through the vacuum container 102 may be significantly reduced. Therefore, vacuum maintenance and maintenance are easy.

The first wiring 140 may be disposed on the second gas diffusion space 152. The first wires 140 may be disposed on one plane. For example, the first wiring 140 may be embedded in the gas distribution plate 160. The first wiring 140 is a primary distribution circuit for distributing the RF power provided through the external power supply line 149 to the power supply electrodes 110. The RF power distributed through the first wiring 140 may be redistributed through the second wiring 130 and finally supplied to the power supply electrodes 110. The second wires 130 may be disposed on one plane.

If the first wiring 130 mainly performs power distribution, the number of the contact plugs 190 passing through the second gas diffusion space 152 increases. Conversely, when the second wiring 140 is mainly used for power distribution, the number of the contact plugs 190 is reduced in the second gas diffusion space 152, but the space in which the second nozzles 154 are disposed Is limited. Therefore, the second nozzle arrangement is limited. Therefore, it is required that the power distribution by the first wiring 140 and the power distribution by the second wiring 130 are appropriately matched.

The first wiring 140 has a coaxial cable structure. As a result, the change in impedance according to the surrounding environment is minimized. In addition, the impedance between one end connected to the power supply line of the first wiring 140 and the other end connected to the contact plugs 190 may be set to be the same. For this, the length between one end connected to the power supply line of the first wiring 140 and the other end connected to the contact plugs 190 may be the same. For example, the first wiring 140 may have a branch at every branch point and finally have a branch point of the power supply line ²ⁿ .

The contact plugs 190 may pass through the second gas diffusion space 152 to electrically connect the first wiring 140 and the second wiring 130. The number of the contact plugs 190 may depend on the structure of the first wiring 140 and the structure of the second wiring 130. The structure of the contact plug 190 has the same structure as that of the coaxial cable. Accordingly, the impedance of the contact plug 190 may not be affected by the surrounding environment.

The second wires 130 may supply power to the power supply electrodes 110 by redistributing power. The second wires 130 may electrically connect the power supply electrodes 110 forming the group to the contact plugs 190. The second wiring 130 has a coaxial cable structure. The second wirings 130 may have a plurality of wirings.

The second wires 130 may distribute electric power to a plurality of power supply electrodes 110 adjacent to each other with power supplied through the contact plugs 190. The second wires 130 may be disposed on the same plane. The second wiring 130 may have a coaxial cable structure.

The second wires 130 need not be set to have the same lengths of the contact plugs and the power supply electrodes. Therefore, the second wiring 130 may be in the form of a stripline disposed across the center of the power supply electrodes 110. [ The second wires 130 may distribute power to two or more power supply electrodes 110. Therefore, the number of the power supply electrodes is not limited to the power supply 2 (2 ⁿ ), and can be variously changed.

The power supply electrodes 110 may receive power through the second wiring 130 to form a plasma. The power supply electrodes 110 may have a rectangular pillar shape. The power supply electrodes 110 may extend in a first direction and may be arranged at regular intervals in a second direction. The power supply electrodes 110 may be formed of a conductive material. The surfaces of the power supply electrodes 110 may be coated with an insulator. The power supply electrodes 110 may be electrically connected to the second wiring 140 through coupling means 114 and may be mechanically fixed.

An insulator 112 may be disposed between the power supply electrode 110 and the lower surface of the gas distribution plate 160. The insulator 112 may have a stripline shape and extend in a first direction. A part of one surface of the insulator 112 is exposed to the plasma, and the remainder of the surface of the insulator 112 can be coupled to the power source electrode 110. The other surface of the insulator 112 may be coupled to the lower surface of the gas distribution plate 160.

The ground electrodes 120 may be disposed on both sides of the power supply electrode 110. The ground electrode 120 may protrude from the lower surface of the gas distribution plate and extend in a first direction. Or the ground electrode 120 may be mounted on the lower surface of the gas distribution plate 160 and extend in the first direction.

The insulator 112 may be disposed such that the lower surface of the gas distribution plate 160 except for the ground electrode 120 is not exposed to the plasma. The lower surface of the ground electrodes 120 may be lower than the lower surface of the power supply electrodes 110. Accordingly, the plasma generating space can be limited. Plasma can be generated mainly between the ground electrode 120 and the power supply electrode 110.

The first gas stored in the first gas diffusion space 151 may be provided between the power supply electrode and the ground electrode through the first nozzle 153. The first nozzle 153 may extend to the first gas diffusion space 151 through the insulator 112 disposed between the ground electrode 120 and the power supply electrode 110. [ The first nozzles 153 may be aligned in a first direction or a direction in which the power supply electrodes extend.

The second gas stored in the second gas diffusion space 152 may be provided to the reaction region 109 through the second nozzle 154 via the ground electrode 120. For example, the second nozzle 154 may pass through the ground electrode 120 to provide a second gas directly to the substrate 108. The second nozzle 154 may be disposed on a lower surface portion of the ground electrode that is not exposed to the plasma region 107.

The frequency of the RF power supply 180 may be 13.56 Mhz to several hundred Mhz. The output of the RF power supply 180 may be supplied to the first wiring 140 through the impedance matching network 170 and the power supply line 149.

Conventional power supply lines are respectively connected to power electrodes to supply power. When there are a plurality of power supply lines, the through holes passing through the vacuum container correspond to the number of power supply lines. Therefore, as the number of the power supply electrodes increases, the number of the power supply lines inserted into the through holes and the through holes increases. Therefore, it is difficult to maintain the vacuum.

The plasma generator according to an embodiment of the present invention applies RF power of 13.56 Mhz to 200 Mhz to a plurality of line-shaped power supply electrodes. A plasma generating apparatus according to an embodiment of the present invention includes a power distributing unit (a first wiring and a second wiring) for distributing power to power supply electrodes within a gas distribution plate. Thus, an efficient plasma discharge is possible with a minimum external power supply line. Further, the power distributing portion is designed to have a coaxial cable structure. In addition, the impedances between the power supply electrodes from the external power supply line are substantially the same. Therefore, uniform plasma distribution can be stably performed. Further, the first gas diffusion space and the second gas diffusion space distribute the gas, and power distribution can be performed to the power supply electrodes with a simple structure. As a result, manufacturing cost is reduced and maintenance is easy.

According to a modified embodiment of the present invention, the power distribution section 105 may be disposed outside the vacuum container 102. [

2 is a view for explaining a plasma generating apparatus according to another embodiment of the present invention. A description overlapping with that described in Fig. 1 will be omitted.

Referring to FIG. 2, the thin film deposition apparatus 100b may be replaced with a gas distribution plate 160 in place of the lid of the vacuum container 102.

The thin film deposition apparatus 100b includes a plurality of ground electrodes 120 arranged in parallel with the upper plate 160 of the vacuum container 102, a power supply electrode 110 disposed between the ground electrodes 120, A first nozzle 153 for supplying a first gas between the power supply electrode 110 and the ground electrode 120 and a second nozzle 153 for supplying a first gas between the power supply electrode 110 and the ground electrode 120, And a second nozzle 154 formed alternately with the first electrode 153 and the second electrode 154 and injecting a second gas different from the first gas through the ground electrode 120.

The gas distribution plate 160 may be a top plate of the vacuum container. The upper plate of the vacuum container includes a first gas diffusion space 151 connected to the first gas supply line 163 and a second gas diffusion space 152 connected to the second gas supply line 164, And the second gas.

The power distributor 105 forms a plasma by the external RF power supplied to the power supply electrode 110 and can supply power to the power supply electrode 110.

The first gas forms a plasma between the power supply electrode 110 and the ground electrode 120. The plasma and the ladder formed by the plasma react with the second gas to form a thin film .

 The second gas may not be directly injected to the power supply electrode 120. A thin film or polymer may be deposited on the surface of the power supply electrode 110 when the second gas is supplied through the power supply electrode 110 or directly to the power supply electrode 110. The thin film or polymer formed on the power supply electrode 110 may act as a contaminant. Therefore, in order to prevent this, it is preferable that the second gas (evaporation source gas) is not directly injected into the power electrode.

The plasma generating apparatus according to the modified embodiment of the present invention includes a plurality of ground electrodes 120 provided in correspondence with the plane of the substrate 108 among the first direction and the second direction defining the plane in which the substrate 108 is disposed, A power supply electrode 110 disposed between adjacent ground electrodes 120 and arranged to face the ground electrode 120 and a power supply 110 for receiving power from the RF power supply and distributing power to the power supply electrode 110, (105). A first nozzle 153 which is spaced apart from the first direction and in a third direction perpendicular to the second direction and supplies a first gas to a far side of the substrate 108 arranged to face the power supply electrode 110, . And a second nozzle 154 for supplying a second gas may be disposed on the side closer to the substrate 108.

The first gas forms a plasma between the power supply electrode 110 and the ground electrode 120. The plasma and the ladder formed by the plasma react with the second gas to form a thin film Can be formed. The second gas may not be directly injected to the power supply electrode 110.

The plasma generating apparatus according to the modified embodiment of the present invention includes a plurality of power supply electrodes 110 disposed at the lower end of the upper plate 160 of the vacuum container 102, A first nozzle 153 positioned at a lower end of the upper plate 160 and injecting a first gas with reference to an upper plate of the vacuum container 102; And a second nozzle 154 that penetrates the ground electrode 120 and emits a second gas. The injection position of the first gas and the injection position of the second gas may be different from each other.

The distance between the first nozzle 153 and the substrate 108 may be greater than the distance between the second nozzle 154 and the substrate 108.

The thin film deposition method according to the modified embodiment of the present invention includes the steps of distributing electric power to the plurality of power supply electrodes 110 by receiving electric power from the RF power supply 180, Providing a first gas between the ground electrode 120 and the power supply electrode 120 arranged so as to be positioned between the ground electrode 120 and the power supply electrode 110 through the first gas supply line 163, Forming a plasma using the supplied first gas, a reactive region 109 interacting with the plasma using a second gas supply line 164 and a second gas supplied through the ground electrode 120, , And forming a thin film on the substrate (108) disposed in the reaction region (109). The second gas may not be directly injected to the power supply electrode 110.

Further, according to the modified embodiment of the present invention, the thin film deposition apparatus 100b may not include a vacuum container. In this case, the thin film deposition apparatus 100b can discharge at atmospheric pressure.

3 is a conceptual diagram illustrating a thin film deposition apparatus 100c according to another embodiment of the present invention. A description overlapping with that described in Fig. 1 will be omitted.

Referring to FIG. 3, the shape of the first gas diffusion region (not shown) and the second gas diffusion region (not shown) may be variously modified. The first gas supply unit 157 may be connected to the first gas supply line 163 and the second gas supply unit 159 may be connected to the second gas supply line 164. The first nozzle supplies a first gas to the plasma region between the power supply electrode and the ground electrode, and the second nozzle supplies the second gas to the reaction region through the ground electrode.

The coupling means 114 may supply power to the center of the power supply electrodes 110. The power distributor 105 may be disposed inside the vacuum container 102.

4A is a plan view illustrating a thin film deposition apparatus according to another embodiment of the present invention.

4B to 4E are cross-sectional views taken along lines I-I ', II-II', III-III ', and IV-IV' of FIG. 4A, respectively.

4A to 4E, the thin film deposition apparatus 100d includes a vacuum container defining a cavity. The thin film deposition apparatus 100d includes a plurality of ground electrodes 120, power supply electrodes 110 disposed between the ground electrodes 120 and disposed opposite to both sides of the ground electrode 120, A plurality of plasma regions for forming a plasma using a first gas supplied between the ground electrode 120 and the power source electrode 110 through a gas supply line 163, a second gas supply line 164, A reaction region interacting with the plasma in the vicinity of the plasma regions using a second gas supplied through the ground electrode 120 and a substrate holder disposed in the reaction region, A thin film is formed on the substrate.

The first direction is a direction in which the power supply electrodes 110 and the ground electrodes 120 extend, and the second direction is a plane perpendicular to the first direction and in which the gas distribution plate 160 is disposed. The third direction is the direction perpendicular to the arrangement plane of the gas distribution plate.

The power supply electrodes 110 may extend in a first direction with a predetermined width and thickness. The power electrode is a conductor. The power supply electrodes 110 may be a highly conductive material such as aluminum. The corners of the power supply electrodes may be subjected to a rounding process. The length of the power supply electrodes 110 may be several tens of centimeters to several meters. The spacing between the power electrodes is preferably constant.

The ground electrodes 120 may protrude from the lower surface of the gas distribution plate 160 and extend in parallel in the first direction with a predetermined width and thickness. Ground electrodes 120 may be disposed on both sides of one power supply electrode 110. Thus, in the absence of plasma, each of the power supply electrodes can have the same impedance. In addition, the distance between the power supply electrode 110 and the ground electrode 120 may be constant. The ground electrode 120 is a conductor. The surface of the ground electrode 120 may be coated with an insulator so as to have sputtering resistance.

The distance from the lower surface of the gas distribution plate 160 to the lower surface of the ground electrode 120 may be smaller than the distance from the lower surface of the gas distribution plate 160 to the lower surface of the power supply electrode 110.

The distance between the ground electrode 120 and the power supply electrode 110, the width and height of the power supply electrode, and the width and height of the ground electrode may be changed depending on process conditions. For example, when operating at a high pressure, the distance between the ground electrode and the power supply electrode may be reduced. When the uniformity is improved, the interval between the neighboring ground electrodes can be reduced. In order to arrange the plasma region and the reaction region adjacent to each other, the height of the ground electrode can be reduced. The ground electrode and the power supply electrode may be alternately arranged. However, the ground electrode may be disposed at the outermost periphery.

The shape of the ground electrode and the shape of the power supply electrode can be variously modified, such as a rectangular shape, a tapered shape, a truncated triangle shape, an elliptical shape, and the like. Further, the gap between the ground electrode and the power supply electrode may not be constant in the third direction. Also, the power electrode or the ground electrode may be bent in a first direction.

The gas distribution plate 160 may include an upper gas distribution plate 160a on which the first wiring 140 is mounted and a lower gas distribution plate 160a on which the second wiring 130 is mounted. The gas distribution plate 160 may be in the form of a rectangular plate. The upper gas dissipation plate 160a and the lower gas distribution plate 160b may be coupled to each other.

And a depression 151a extending in a second direction on the upper surface of the lower gas distribution plate 160b. The lid part 155 may cover the upper surface of the depression 151a. The lid part 155 and the depression 151a may form a first gas diffusion area 151. [ A plurality of the first gas diffusion regions 151 may be disposed in the second direction. The first gas diffusion regions 151 may be connected to each other at the edge of the lower gas distribution plate 160b. The first nozzle 153 may be connected to the first gas diffusion region 151 through the insulating plate 112. The first nozzles 153 may be aligned in a first direction.

A first depression 152a may be formed on the lower surface of the upper gas distribution plate 160a. In addition, a second depression 152b may be formed on the upper surface of the lower gas distribution plate 160b. The first depressed portion 152a and the second depressed portion 152b may be combined to form the second gas diffusion space 152. [ The second gas diffusion space 152 may be formed on an entire region where diffusion of the second gas is desired. The plurality of second nozzles 154 connected to the second gas diffusion space 152 may supply the second gas to the reaction region through the ground electrode 120. The second gas diffusion space 152 may have a rectangular plate shape.

The first gas supply line 163 may be embedded at the edge of the upper gas distribution plate 160a. The first gas supply line 163 may be connected to the first gas diffusion region 151.

A second gas supply line 164 may be disposed near the center of the upper gas distribution plate 160a. And a second gas supply line 164 for supplying gas from the outside to the second gas diffusion space 152 may be connected. A baffle 165 for diffusing a second gas supplied to the second gas supply line 164 may be disposed in the second gas diffusion space 152 below the second gas supply line 164.

The first wiring 140, the second wiring 130, and the contact plug 190 may have a coaxial cable structure.

The first wiring 140 may receive power through a power supply line 149. The power supply line 149 may include a center conductor 149a and an insulator 149b surrounding the center conductor 149a.

The first wiring 140 may be disposed on a depression 141 formed on the upper surface of the second gas diffusion space 152. Specifically, the first wiring 140 may be disposed on the depression 141 formed on the lower surface of the upper gas distribution plate 160a. The shape of the depression 141 may be the same as the shape of the first wiring.

The first wiring 140 includes a first upper insulating plate 148, a first wiring conductive line 146 disposed under the first upper insulating plate 148, and a second wiring conductive line 146 disposed under the first wiring conductive line 146 A first lower insulating plate 144 and a first lower conductive plate 142 disposed under the first lower insulating plate 144. The first upper insulating plate 148 and the first lower insulating plate 144 may be disposed to surround the first wiring conductive line 146. The upper gas distribution plate 160a and the lower conductive plate 142 may be disposed to surround the first upper insulating plate 148 and the first lower insulating plate 146. [ The lower surface of the lower conductor plate 142 coincides with the lower surface of the upper gas distribution plate, so that the fluid resistance of the gas can be reduced. The first upper insulating plate 148 and the first lower insulating plate 144 may fill the space around the first wiring conductive line 146 to suppress abnormal discharge.

The first wiring conductive line 146 may be branched in order from the power supply point (the point of contact between the power supply line and the first wiring) to a multiple of two. The distance between the last branch points and the power supply point may be the same. The first wiring conductive lines 146 may be disposed on the same plane. Accordingly, the first wiring 146 can be freely disposed without affecting the position of the nozzle. The last branched line of the first wiring 140 is connected to the second wiring 130 through the second gas diffusion space 152 through the contact plug 190.

If the number of points branched by the first wiring 140 is too large, the number of contact plugs increases. Accordingly, the contact plug passing through the second gas diffusion space 152 can interfere with gas diffusion and gas distribution.

The second wiring 130 may be disposed on the depression 131 formed on the lower surface of the second gas diffusion space 152. Specifically, the depressed portion 131 may be disposed on the upper surface of the lower gas distribution plate 160b. The number of depressions 131 may be the same as the number of contact plugs. The depression 131 may be disposed in the center of the lower gas distribution plate 160b or in the center of the power supply electrode 110 in a second direction.

The second wiring 130 is disposed on the lower portion of the second upper insulating plate 134, the second upper insulating plate 134 disposed under the second upper conductive plate 132, And a second lower insulating plate 138 disposed under the second wiring conductive line 136. The second wiring conductive line 136 may include a second lower wiring conductive line 136, The second upper insulating plate 134 and the second lower insulating plate 138 may fill the space around the second wiring conductive line 136 to suppress an abnormal discharge.

It is not required that the distances of the second wiring lines are necessarily the same. For example, when the distance between the power electrode and the ground electrode and the distance between the power electrode and the ground electrode are fixed by the process conditions, the number of power supply electrodes is not limited to a multiple of 2 for any substrate size. Therefore, in this case, the second wiring can connect at least one odd number of multiple electrodes. Thus, for any substrate size, the number of power supply electrodes can be selected.

The second upper insulating plate 134 and the second lower insulating plate 136 may be formed to surround the second wiring conductive line 136. The second upper conductive plate 132 and the lower gas distribution plate 160b may be formed to surround the second upper insulating plate 134 and the second lower insulating plate 138. [ Accordingly, the second wiring 130 may have a coaxial cable structure.

The contact plugs 190 may include a plug conductor 192 electrically connecting the first wiring 140 and the second wiring 130, an insulating jacket 194 surrounding the plug conductor 192, And an outer sheath 196 that surrounds the insulation jacket 194. Accordingly, the contact plugs 190 may have a coaxial cable structure. The insulating jacket 194 may remove the gas space to prevent abnormal discharge.

Insulators 112 may be interposed between the power supply electrodes 110 and the gas distribution plate 160 to extend in parallel with the power supply electrodes 110. The insulators 112 may be in strip-line form. The insulator 112 may fill a space between neighboring ground electrodes 120. The insulator 112 may have a multilayer structure of a first insulator layer 112a and a second insulator layer 112b. The first insulator 112a directly exposed to the plasma may be a material resistant to sputtering such as ceramic, alumina, or sapphire. The second insulator layer 112b, which is not exposed to the plasma, may be a material such as Teflon, reinforced plastic, glass, quartz.

The first nozzles 152 may be connected to the first gas diffusion space 151 to inject gas into the lower portion of the gas distribution unit. The first nozzles 152 may inject a first gas into a space between the ground electrode 120 and the power supply electrode 110. The first nozzles 152 may be aligned in a first direction.

The second nozzles 154 are connected to the second gas diffusion space 152 and inject gas into the lower part of the gas distribution plate 160. The second nozzles 154 may be formed through the ground electrode 120. The second nozzles 154 may be arranged in the extending direction of the ground electrode 120 or in the first direction.

The nozzles 153 and 154 may be divided into a first region, a second region, and a third region along a third direction. The diameter of the third region may be a tapered shape gradually increasing in the third direction. The diameter of the second region may be smaller than the diameter of the first region and the third region. Accordingly, the nozzles 153 and 154 can jet the gas at a wide angle in the third direction.

Each of the power supply electrodes 110 may be supplied with power through the first wiring and the second wiring at at least one position. When power is supplied from one position, power can be supplied from the center of the power supply electrode. When power is supplied at a plurality of positions, power can be supplied symmetrically about the power supply electrode.

The second wiring 130 and the power supply electrodes 110 are electrically connected to each other by the coupling means 114 and can be mechanically coupled. The coupling means may be insulated by the insulator 115 and electrically insulated from the lower distribution plate 160b.

The plasma generating apparatus according to an embodiment of the present invention uses a minimum gas supply line and a power supply line. Thus, a complicated structure for maintaining vacuum can be avoided. Further, the first wiring 140 and the second wiring 130 for distributing power can be disposed in the gas distribution plate 160 to provide mechanical stability and maintenance convenience without interfering with the gas flow. Further, the second gas, which is an evaporation source gas, is supplied to the substrate through the second nozzle at a plurality of spatially uniform positions, and the second gas is not directly exposed to the plasma, so that a thin film having less plasma damage can be formed on the substrate have.

According to a modified embodiment of the present invention, the second wiring can be configured so that the distance between the power supply electrodes 110 in one contact plug 190 is the same.

The plasma apparatus according to an embodiment of the present invention can operate at atmospheric pressure without being mounted in a vacuum container.

5A is a plan view illustrating a thin film deposition apparatus according to another embodiment of the present invention.

5B to 5D are cross-sectional views taken along line I-I ', line II-II' and line III-III ', respectively, of FIG. 5A. A description overlapping with that described in Fig. 4 will be omitted.

5A to 5D, the gas distribution plate 160 may include an upper gas distribution plate 160a and a lower gas distribution plate 160b. A depression may be formed on the lower surface of the upper gas distribution plate 160a.

The lower gas distribution plate 160b may be disposed to be inserted into the lower surface of the upper gas distribution plate 160a. Accordingly, the lower surface of the lower gas distribution plate 160b and the lower surface of the upper gas distribution plate 160a may coincide with each other. The upper gas distribution plate 160a and the lower gas distribution plate 160b may be combined to form the second gas diffusion space 152. [ The size of the lower gas distribution plate 160b may be greater than the size of the second gas diffusion space 152.

6 is a plan view illustrating a thin film deposition apparatus according to another embodiment of the present invention. A description overlapping with that described in Fig. 4 will be omitted.

Referring to FIG. 6, the first wiring 140 is supplied with RF power through a power supply line 149. The first wiring 140 and the second wiring 130 can supply power to one power electrode at two positions. Accordingly, the power supply electrodes can be supplied with power at two portions arranged symmetrically with respect to each other. Accordingly, the first wiring 140 may have a mirror symmetrical structure of the first wiring shown in FIG. 3A.

The power supplied from the power supply line 149 is divided into two bumps through the first wiring 140 and arranged to be mirror symmetrical with respect to the first direction about the second direction. The distance from the power supply point of the first wiring 140 to the contact plugs 190 may be the same. Supplying power to one power electrode at a plurality of points can suppress the standing wave effect.

7 is a view for explaining a thin film deposition apparatus according to another embodiment of the present invention. A description overlapping with that described in Fig. 4 will be omitted.

Referring to FIG. 7, the thin film deposition apparatus 300 includes a vacuum container 103 defining a cavity. The thin film deposition apparatus 100d includes a plurality of ground electrodes 120, power supply electrodes 110 disposed between the ground electrodes 120 and disposed opposite to both sides of the ground electrode 120, A plurality of plasma regions for forming a plasma using a first gas supplied between the ground electrode 120 and the power source electrode 110 through a gas supply line 163, a second gas supply line 164, A reaction region interacting with the plasma in the vicinity of the plasma regions using a second gas supplied through the ground electrode 120 and a substrate holder disposed in the reaction region, A thin film is formed on the substrate.

The power distribution unit 105 may include a power distribution using a transformer, a power distribution circuit using an inductor and a capacitor, or a branch wiring circuit having a coaxial cable structure.

The power distributor 105 may be disposed outside the vacuum container. The coupling means may be connected to the power supply electrode through the upper plate 104 and the gas distribution portion 160 of the vacuum container. The coupling means can supply the distributed power to each corresponding power supply electrode.

8 is a conceptual diagram illustrating a thin film deposition apparatus according to another embodiment of the present invention.

8, the power distributor 405 is disposed outside the vacuum container 102 and may have a coaxial cable structure. The power supplied from the RF power supply 180 is provided to the power distribution unit 405 via the impedance matching network 170. [ The power distribution wiring 442 may in turn have a tree structure with two branches. The distance from the power supply terminal of the power distribution wiring 442 to the final branch point may be the same. Accordingly, the impedance in the RF power source direction at the final branch point can be the same for each branch point.

The coupling means 446 may have a coaxial cable structure and electrically connect the power electrode 110 at a final branch point. The coupling means 446 may be electrically connected to the power supply electrode 110 through the vacuum vessel and / or the gas distribution unit. The number of the coupling means 446 may be the same as the number of the final branch points.

And impedance adjusting means capable of adjusting impedance can be disposed between the combining means and the final branching point when there is a difference in impedance for each branching point. The impedance adjusting means may change the power to be distributed by adjusting the impedance.

9 is a conceptual diagram illustrating a thin film deposition apparatus according to another embodiment of the present invention.

Referring to FIG. 9, the power distributor 505 may supply power to one power electrode 110 at two or more points. For this, the power divider 505 may include a first power divider 505a and a second power divider 505b having the same structure.

The power distribution portion 505 is disposed outside the vacuum container and may have a coaxial cable structure. The power supplied from the RF power supply 180 is provided to the power distributor 505 through the impedance matching network 170. [ Each of the first and second power distribution wirings 542a and 542b may have a tree structure having two branches in order. The distances from the power supply ends of the first power distribution wiring 542a and the second power distribution portion 542b to the final branch point may be the same. Accordingly, the impedance in the RF power source direction at the final branch point can be the same for each branch point.

The coupling means 546a and 546b may have a coaxial cable structure and electrically connect the power electrode 110 at a final branch point. The coupling means (546a, 546b) may be electrically connected to the power supply electrode through the vacuum vessel and / or the gas distribution portion. The number of coupling means (546a, 546b) may be the same as the number of final branch points.

And impedance adjusting means capable of adjusting impedance can be disposed between the combining means and the final branching point when there is a difference in impedance for each branching point. The impedance adjusting means may change the power to be distributed by adjusting the impedance.

10 is a conceptual diagram illustrating a thin film deposition apparatus according to another embodiment of the present invention.

10, the power distributor 605 is disposed outside the vacuum container 102 and may have a coaxial cable structure. The power supplied from the RF power supply 180 is provided to the power distribution unit 605 through the impedance matching network 170. [

The power distribution unit 605 may include a transformer 642, a capacitor 644, and a coupling means 646. The primary side of the transformer includes a plurality of series connected primary coils and the secondary side of the transformer 642 may include a plurality of secondary coils disposed corresponding to the primary coils. One end of the series-connected primary coil may be connected to the impedance matching network 170. The other end of the series-connected secondary coil may be grounded. One end of each of the secondary coils may be connected to the power supply electrode 110 via a capacitor 644, and the other end of each of the secondary coils may be grounded.

The coupling means 646 may have a coaxial cable structure and electrically connect the power electrode 110 to the capacitor 644. The coupling means 646 may be electrically connected to the power supply electrode 110 through the vacuum vessel and / or the gas distribution unit. The number of coupling means 646 may be the same as the number of secondary coils.

11 is a view for explaining a thin film deposition apparatus according to another embodiment of the present invention.

Referring to FIG. 11, a thin film deposition apparatus 800 includes a vacuum vessel 102 defining a cavity 103. The thin film deposition apparatus 800 includes a plurality of ground electrodes 820, power supply electrodes 110 disposed between the ground electrodes 820 and disposed opposite to both sides of the ground electrode 820, A plurality of plasma regions 107 forming a plasma using a first gas supplied between the ground electrode 820 and the power source electrode 110 through a gas supply line 163, a second gas supply line 164 ) And a reactive region (109) that interacts with the plasma in the vicinity of the plasma regions (107) using a second gas supplied through the ground electrode (820) A thin film is formed on a substrate 108 that includes a substrate holder 106 and is disposed on the substrate holder 106.

The ground electrode may have a T shape while extending in the first direction. Accordingly, the ground electrode may have a shape to surround the power electrode. The ground electrode may extend in the third direction and extend a predetermined distance in the second negative and positive direction in succession.

The second nods may be disposed at the ground electrode at regular intervals. The second furnace can penetrate the ground electrode to inject a second gas onto the lower surface of the ground electrode or the substrate. The second nozzle may be connected to the second gas supply line through the second gas diffusion space.

12 is a view for explaining a thin film deposition apparatus according to another embodiment of the present invention.

Referring to FIG. 12, a thin film deposition apparatus 900 includes a vacuum container 102 defining a cavity 103. The thin film deposition apparatus 800 includes a plurality of ground electrodes 920, power supply electrodes 110 disposed between the ground electrodes 920 and disposed opposite to both sides of the ground electrode 920, A plurality of plasma regions 107 forming a plasma using a first gas supplied between the ground electrode 920 and the power supply electrode 110 through a gas supply line 163, ) And a reaction zone (109) that interacts with the plasma in the vicinity of the plasma zones (107) using a second gas supplied through the ground electrode (920) A thin film is formed on a substrate 108 that includes a substrate holder 106 and is disposed on the substrate holder 106.

The ground electrode may have a T shape while extending in the first direction. Accordingly, the ground electrode may have a shape to surround the power electrode. The ground electrode may extend in the third direction and extend a predetermined distance in the second negative and positive direction in succession.

The second nods may be disposed at the ground electrode at regular intervals. The second nodules extend in the third direction and can extend continuously in the positive and negative second directions. Accordingly, the second nozzle can jet the second gas to the outlet of the plasma region. The second nozzle may be connected to the second gas supply line through the second gas diffusion space.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, And all of the various forms of embodiments that can be practiced without departing from the technical spirit.

100a: thin film deposition apparatus 151: first gas diffusion space
160: Gas distribution plate 180: External RF power source
170: impedance matching network 140: first wiring
130: second wiring 110: power supply electrode
120: ground electrode 190: contact plug
152: second gas diffusion space 107: plasma region
109: Reaction area 105: Power distribution part

Claims (4)

A plurality of ground electrodes (120);
Power electrodes 110 disposed between the ground electrodes 120 and disposed opposite to a pair of adjacent ground electrodes;
A first gas supply line (163) for supplying a first gas between the adjacent ground electrodes and the power supply electrode; And
A second gas supply line (164) for supplying a second gas through the ground electrodes;
/ RTI >
The lower surface of the ground electrodes is lower than the lower surface of the power supply electrodes,
A plasma region 107 forming a capacitive coupling plasma using a first gas supplied between the ground electrode and the power supply electrode; And
A reaction zone (109) interacting with the charge coupled plasma using a second gas supplied through the ground electrodes;
Further comprising a plasma generator. The method according to claim 1,
A gas distribution plate including a first gas diffusion space connected to the first gas supply line and a second gas diffusion space connected to the second gas supply line; And
And an insulator disposed between the power supply electrode and the lower surface of the gas distribution plate,
Wherein the first gas and the second gas are supplied simultaneously,
Each of the pair of ground electrodes is disposed at an outermost portion of the power supply electrodes facing the inner wall of the vacuum container,
Wherein the first gas diffusion space extends in a second direction across the ground electrode extending in a first direction and is divided into a plurality of spaces,
Wherein a first gas stored in the first gas diffusion space is provided between the power supply electrode and the ground electrode through a first nozzle,
The first nozzle is connected to the first gas diffusion space through an insulator disposed between the ground electrode and the power supply electrode,
And a second gas stored in the second gas diffusion space is provided in the reaction zone through the ground electrode through a second nozzle.
The second nozzle passing through the ground electrode to provide a second gas directly to the substrate,
Wherein the first nozzle is aligned along a second direction,
Wherein the second nozzle is aligned along a second direction, but spaced apart from the first nozzle in a first direction. The method according to claim 1,
Wherein the first gas comprises hydrogen (H2) gas. The method of claim 3,
Wherein the first gas further comprises at least one of an inert gas, a B2H6 gas, and a PH3 gas.

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