KR101180373B1 - Plasma generation apparatus and substrate processing apparatus - Google Patents

Abstract

PURPOSE: A plasma generation apparatus and a substrate processing apparatus are provided to reduce lattice defects density of a substrate caused by plasma impacts by maintaining the substrate in a floating state. CONSTITUTION: A plasma generation apparatus comprises a plurality of ground electrodes(120) which is arranged inside a vacuum container(102) and extended in parallel and one or more power electrodes(110) which is arranged between the ground electrodes. A discharge region with a predetermined interval between the power electrode and the ground electrode is included. The power electrode is tapered in a direction facing a substrate. The power electrode is connected to RF power(170). The vacuum container can have pressure below atmospheric pressure. The vacuum container can include an upper plate(104).

Description

Plasma generator and substrate processing apparatus {PLASMA GENERATION APPARATUS AND SUBSTRATE PROCESSING APPARATUS}

The present invention relates to a capacitively coupled plasma generating apparatus, and more particularly, to a capacitively coupled plasma generating apparatus divided into a plurality of electrodes.

The high frequency plate type capacitively coupled plasma apparatus has limitations in process uniformity and process speed.

One technical problem to be solved of the present invention is to provide a plasma generating apparatus having a process uniformity and a process speed without forming a pattern of electrodes on a substrate.

One technical problem to be solved of the present invention is to provide a substrate processing apparatus having a process uniformity and a process speed without forming a pattern of electrodes on a substrate.

The plasma generating apparatus according to an embodiment of the present invention includes a plurality of ground electrodes disposed in the vacuum container and extending side by side, and power electrodes disposed between the ground electrodes. And a region having a constant distance between the ground electrode and the power electrode, wherein the power electrode is tapered in a direction facing the substrate, and the power electrodes are connected to an RF power source.

In one embodiment of the present invention, one end of the power supply electrodes and the ground electrodes may be curved in a direction facing the substrate.

In one embodiment of the present invention, the height of the power electrode in the direction facing the substrate may be greater than the height of the ground electrode.

In one embodiment of the present invention, the angle between the direction extending along one surface of the power electrode and the direction facing the substrate may be 5 degrees to 15 degrees.

In one embodiment of the present invention, the power electrodes may be even.

In one embodiment of the present invention, the ground electrode and the power supply electrode may further include a dielectric support. One end of the ground electrodes is coupled to the dielectric support, one end of the power electrodes is coupled to the dielectric support, and the other end of the ground electrodes and the other end of the power electrodes face the substrate.

In one embodiment of the present invention, the dielectric support may include a plurality of nozzles for injecting a process gas between the ground electrode and the power electrode.

In one embodiment of the present invention, it may further include a gas distributor disposed on the dielectric support for distributing gas to the nozzle.

In one embodiment of the present invention, the process gas may include at least one of SiH4 gas, H2 gas, Ar gas, NF3 gas.

In one embodiment of the present invention, further comprising a power distribution unit for distributing power to the power electrodes connected in parallel to the power source, the power distribution unit may supply power to at least one power electrode at at least two points.

In one embodiment of the present invention, it may further include a power supply line connecting the power electrode and the power distribution unit.

In one embodiment of the present invention, the length between the power supply point of the power electrode in the power source may be the same.

In one embodiment of the present invention, the power distribution unit may be disposed between the dielectric and the top plate of the vacuum vessel inside the vacuum vessel.

In one embodiment of the present invention, the power distribution unit may be disposed outside the vacuum vessel.

In one embodiment of the present invention, the power distribution unit may include power distribution lines for supplying power to a plurality of points of the power electrode, and a guard unit disposed around the power distribution lines and grounded.

In one embodiment of the present invention, the power electrode may include at least one hole on the surface facing the ground electrode.

In one embodiment of the present invention, the distance between the ground electrode and the power electrode may be 3 to 10 millimeters.

In one embodiment of the present invention, the frequency of the RF power source may be 13.56 Mhz to 100 Mhz.

In one embodiment of the present invention, the ground electrode may include a tapered portion that increases in width in the direction of the substrate and an extension portion having a constant width.

In one embodiment of the present invention, the power electrode may be supplied with RF power at a plurality of points.

According to an embodiment of the present invention, a plasma generating apparatus includes a vacuum container, ground electrodes disposed in the vacuum container and extending side by side in a first direction, and between the ground electrodes in a second direction crossing the first direction. Power electrodes disposed on the substrate, and a dielectric support for mounting the ground electrodes and the power electrodes. The power supply electrode has a first height in a third direction perpendicular to the first direction and the second direction from a first surface in contact with the dielectric support, and the power supply electrode is formed in the first surface in contact with the dielectric support. The power electrode has a second thickness at one end spaced in the third direction from the first surface. The ground electrode has a second height from the first face in contact with the dielectric support, the ground electrode has a third thickness in the first face in contact with the dielectric support, and the ground electrode has the Have a fourth thickness at one end spaced in the third direction. The first thickness is greater than the second thickness, and the third thickness is smaller than the fourth thickness.

In one embodiment of the present invention, the first height may be greater than or equal to the second height.

In one embodiment of the present invention, one end of the ground electrodes and one end of the power supply electrodes may be processed into a curved surface.

In one embodiment of the present invention, the vertical distance between the ground electrode and the power electrode may be constant.

According to an embodiment of the present invention, a plasma generating apparatus includes a plurality of ground electrodes disposed inside a vacuum container and extending side by side and including a truncated triangular pillar shape, and disposed between the ground electrodes and disposed between the ground electrodes. Power electrodes including an interposed truncated triangular pillar shape. And a region having a constant distance between the ground electrode and the power electrode, wherein the power electrodes are connected to an RF power source.

Plasma generating device according to an embodiment of the present invention is a vacuum container, a power supply electrode disposed in the interior of the vacuum container and disposed inside the vacuum container and spaced apart from the ground electrode, and the power supply electrode and And a substrate holder facing the ground electrode. The power supply electrode is disposed on a plane on which the ground electrode is disposed, and includes a discharge region in which a distance between the ground electrode and the power supply electrode is constant. The discharge region is obliquely contacted in the plane where the power electrode is disposed, and the power electrode is connected to the RF power source.

A substrate processing apparatus according to an embodiment of the present invention includes a vacuum container, a plurality of ground electrodes disposed in the vacuum container and extending in parallel with each other, and a power electrode disposed in the vacuum container and interposed between the ground electrodes. And a substrate holder disposed opposite the ground electrodes and the power electrodes and supporting the substrate. And a region having a constant distance between the ground electrode and the power electrode, wherein the power electrode is tapered in a direction facing the substrate, and the power electrodes are connected to an RF power source.

In one embodiment of the present invention, the temperature of the substrate is 50 degrees to 250 degrees Celsius, a polycrystalline silicon film or an amorphous silicon thin film may be formed on the substrate.

The plasma generating apparatus according to an embodiment of the present invention may have a structure of a divided power electrode. The divided power electrode may have a line shape, and may supply RF power to a plurality of points to reduce the standing wave effect in the longitudinal direction of the power electrode and form a uniform plasma. In addition, the ground electrodes may be disposed between the power electrodes to form stable and independent plasmas, to remove standing wave effects in a direction perpendicular to the length direction of the power electrodes, and to maintain the substrate in a floating state. Accordingly, the lattice defect density of the substrate due to the impact of the plasma can be reduced. The distance between the power supply electrode and the substrate may be several cm or less at a high pressure of several torr.

1 is a partial perspective view illustrating a plasma generating apparatus according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view taken along line II ′ of FIG. 1.
3 is a plan view illustrating a power distribution unit.
4 is a view for explaining a plasma generating apparatus according to another embodiment of the present invention.
5 is a diagram illustrating a substrate processing apparatus according to an embodiment of the present invention.

In a flat panel display process or a solar cell process having a large area of 1 m x 1 m or more, the density of the capacitively coupled plasma may not be uniform due to standing wave effects. The standing wave effect may worsen plasma uniformity.

In solar cell processes using polysilicon, high growth rates and low lattice defect densities of the polysilicon are required. Thus, polysilicon plasma deposition apparatus with small lattice defect density, high growth rate, and process uniformity is the most important challenge of thin film solar cells.

Increasing the driving frequency of the capacitively coupled plasma can reduce ion bombardment energy, increase electron density, and decrease electron temperature. However, as the driving frequency increases, the standing wave effect may increase, thereby decreasing the plasma uniformity. Therefore, there is a need for a method of obtaining a high density uniform plasma at a driving frequency of 13.56 Mhz or more.

The plasma generating apparatus according to an embodiment of the present invention applies RF power of 13.56 Mhz to 200 Mhz to a plurality of line-shaped power electrodes. In order to reduce the standing wave effect in the longitudinal direction of the power supply electrode, each of the power supply electrodes is supplied with power at a plurality of positions. The current distribution on the left and right sides of the power supply position may be symmetrical. In addition, a ground electrode is disposed between the power electrodes. Since the plasma may be generated between the power supply electrode and the ground electrode, the substrate may be in a floating state. The substrate can reduce the impact of the plasma to reduce the grating defect density. The ground electrode also serves to remove the standing wave effect in a direction perpendicular to the length direction of the electrode by making the power electrodes separate from each other.

When the power electrodes and the ground electrodes extend in parallel with each other, a pattern of the power electrodes may be formed on a surface of a substrate. Thus, process uniformity can be reduced. The shape of the power electrodes and the ground electrodes affects the process uniformity of the substrate. In addition, increasing the distance between the power electrode and the substrate may increase the process uniformity. However, increasing the distance between the power electrode and the substrate reduces the process speed. Thus, there is a need for a new structure of the power electrodes and the ground electrodes that provides high process speed and process uniformity.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided so that the disclosure may be made thorough and complete, and to fully convey the spirit of the invention to those skilled in the art. In the drawings, the components have been exaggerated for clarity. Portions denoted by like reference numerals denote like elements throughout the specification.

1 is a partial perspective view illustrating a plasma generating apparatus according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view taken along line II ′ of FIG. 1.

3 is a plan view illustrating a power distribution unit.

1 to 3, the plasma generating apparatus includes a plurality of ground electrodes 120 disposed in the vacuum vessel and extending in parallel with each other, and at least one power electrode disposed between the ground electrodes 120. 110). The gap d between the ground electrode 120 and the power electrode 110 includes a constant region, and the power electrode 110 is tapered in a direction facing the substrate. The power electrode 120 is connected to the RF power source 170.

The vacuum vessel 102 may have a pressure below atmospheric pressure. The vacuum container 102 may be a rectangular parallelepiped container. The vacuum container 102 may include a top plate 104.

 A gas inlet (not shown) and a gas exhaust part (not shown) may be disposed in the vacuum container 120. The gas inlet (not shown) may provide a process gas to the vacuum vessel 120. The gas exhaust unit may discharge the process gas and the reaction byproduct of the vacuum vessel 120 to the outside. The plasma generating device may form amorphous or polycrystalline silicon on the substrate 182. The pressure of the vacuum vessel 102 may be several hundred millitorr (mTorr) to several Torr.

The substrate 182 may be disposed on the substrate holder 180. The substrate holder 180 may be disposed to face the top plate 104. The substrate 182 may be disposed in parallel with the upper plate 104. The substrate 182 may be a semiconductor substrate, a glass substrate, or a dielectric substrate. The substrate 182 may be a rectangular substrate. The material deposited on the substrate 182 may be amorphous or polycrystalline silicon. The substrate holder 180 may include a heating unit (not shown). The heating unit may heat the substrate 182. The temperature of the substrate 182 may be room temperature to 300 degrees Celsius. The substrate 182 or the substrate holder 180 may be electrically floated. The distance g between the substrate 182 and the power electrode 110 may be several to several tens of centimeters (cm).

The upper plate 104 may be disposed on an upper surface of the vacuum container 102. The top plate 104 may be metal. The top plate 104 may be aluminum or stainless steel. The upper plate 104 may have a square plate shape. The upper plate () and the vacuum container () may be in close contact with each other to maintain a vacuum. The top plate may include a plurality of through holes 106. The power supply line 142 is disposed in the through hole 106. The power supply line 142 electrically connects the power distribution unit 140 and the power electrode 110. In addition, the power supply line 142 may support the power electrode 110.

The dielectric support part 150 is disposed below the upper plate 104. The dielectric support 150 may include at least one of alumina, ceramic, quartz, Teflon, PEEK, and silicon. The dielectric support part 150 may be a single layer or a multilayer. The dielectric support part 150 may be disposed in parallel with the upper plate 104. The dielectric support 104 may include nozzles 132 for providing a process gas between the power electrode 110 and the ground electrode 120. The nozzles 132 may be arranged in a first direction in which the power electrode 110 extends at regular intervals.

The ground electrode 120 may be disposed between the dielectric support parts 150 and extend in the first direction. Accordingly, the dielectric support part 150 may have a band shape extending in the first direction. The nozzles 132 may be disposed at both edges of the dielectric support 150.

The gas distributor 130 may be disposed between the dielectric support 150 and the top plate 104. The gas distribution unit 130 may receive the process gas from the outside to provide the process gas to the nozzles 132 between the ground electrode 120 and the power electrode 110. The process gas may include hydrogen gas (H 2) and xylene (SiH 4).

The gas distribution unit 130 includes preliminary nozzles 135, a lower gas distribution plate 130a on which the preliminary nozzles 135 are disposed, and an upper gas distribution plate on the lower gas distribution plate 130a. 130b. The preliminary nozzles 135 may be aligned with the nozzles 132. The preliminary nozzles 135 may be aligned in the first direction.

The lower gas distribution plate 130a may have a trench 133 in a region where the preliminary nozzles 135 are disposed. The preliminary nozzles 135 may be disposed in the trench 133. The preliminary nozzles 135 aligned in the first direction and the preliminary nozzles 135 spaced apart in the second direction may be disposed in the trench 133. The lower gas distribution plate 130a may include lower through holes 137a. The upper gas distribution plate 130b may include upper through holes 137b aligned with the lower through holes 137a.

The dielectric support part 150 may include a through hole 151. The through hole may be aligned with the lower through hole. The power supply line 142 is connected to the power electrode 110 through the upper through hole 137b, the lower through hole 137a, and the through hole 151.

The upper gas distribution plate 130b and the lower gas distribution plate 130a are combined. Accordingly, process gas is supplied through the trench 133, the preliminary nozzles 135, and the nozzles 132.

The ground electrodes 120 may extend side by side in the first direction. The distance between the ground electrodes 120 may be constant. The ground electrode 120 may include a prism shape or a triangular pyramid shape. As long as the space d between the ground electrode 120 and the power electrode 110 includes a constant region 103, the shape of the ground electrode 120 and the shape of the power electrode 110 may be variously modified. Can be.

The ground electrodes 120 may be arranged in a second direction crossing the first direction. The plane defined by the first direction and the second direction may be parallel to the plane on which the top plate 104 is disposed.

The ground electrode 120 may be separated into an exposed ground electrode 120b exposed inside the vacuum container 102 and an embedded ground electrode 120a buried in the dielectric support 150. The buried ground electrode 120a may be inserted into the dielectric support part 150.

The width of one end of the exposed ground electrode 120b is t3 and the width of the other end of the exposed ground electrode 120b is t4. t3 is greater than t4. The other end of the exposed ground electrode 120b may face the substrate 182. Thus, the exposed ground electrode 120b may be tapered. The other end of the exposed ground electrode 120b may be curved. The third direction is perpendicular to the surface formed by the first direction and the second direction. An angle θ between the third direction and one surface of the exposed ground electrode 120b may be 5 degrees to 15 degrees.

The power electrode 110 may be attached to the dielectric support part 150. The power electrode 110 extends in the longitudinal direction of the ground electrode 120. The power electrode 110 may be a conductive material. The power electrode 110 may extend side by side in the first direction. The power electrodes 110 may be spaced apart in a second direction. The power electrodes 110 may be even.

A width of one end of the power electrode 110 is t1 and a width of the other end of the power electrode 110 is t2 at a surface in contact with the dielectric support part 150. t1 is smaller than t2. The distance d between the power electrode 110 and the ground electrode 120 may be constant. The distance d between the power electrode 110 and the ground electrode 120 may be 3 mm to 10 mm. If d is less than 3 mm, discharge may be difficult. In addition, when d is greater than 10 mm, process uniformity due to discharge may be lowered. The other end of the power electrode 110 may be curved. The height h1 of the exposed power electrode may be greater than or equal to the height h2 of the exposed ground electrode.

The power electrodes 110 may include at least one hole 112 on a surface facing the ground electrode 120. The holes 112 are regularly arranged. The holes 112 may cause hollow cathode discharge. The holes 112 may be aligned in a first direction.

 In the capacitively coupled plasma, as the frequency of the RF power source 170 increases, the plasma density may increase. However, if the frequency of the RF power supply 170 increases, the standing wave effect may increase. The standing wave effect may limit plasma uniformity and process uniformity. The supply of RF power to the nodes N1 and N2 of the power electrode 110 may reduce the standing wave effect. The plasma density distribution may be changed according to the position where the RF power is supplied to the power electrode 110.

The power electrodes 110 may be divided N evenly. RF power is supplied to a central portion of the N-divided portion of the power electrode 110. That is, the nodes N1 and N2 of the power electrode 110 may be located at the center of the divided portion. The current distribution and / or the voltage distribution of the power electrode 110 may be symmetrical with respect to the center of the power electrode 110.

For example, the power electrodes 110 may include nodes N1 and N2. The nodes N1 and N2 may supply the power of the RF power source 170 to the power electrode 110. The nodes N1 and N2 include a first node N1 and a second node N2. The length of the power electrode 140 is L. The first node N1 may be located at L / 4, and the second node N2 may be located at 3L / 4. The current at the nodes N1 and N2 may have a maximum value, and the voltage at the nodes N1 and N2 may have a minimum value. The distribution of the current or the voltage may be symmetrical about the center of the nodes N1 and N2. The phases of the voltages at the nodes N1 and N2 may be in phase.

Positions of the nodes N1 and N2 may be changed to have process uniformity in the first direction.

The plasma may be formed between the power electrode 110 and the ground electrode 120. The distance d between the power electrode 110 and the ground electrode 120 may be 3 mm to 15 mm. The structure in which the power electrode 110 and the ground electrode 120 are adjacent to each other may improve stability of the plasma. In addition, the plasma potential and / or DC bias of the plasma can be reduced. In addition, the substrate may be floated, such that the plasma generating device may provide low grating defects in a deposition process.

The tapered power electrode 110 and the tapered ground electrode 120 may improve the flow pattern of the process gas. In addition, the width t1 of one end of the power electrode 110 is greater than the width t2 of the other end of the power electrode 110. Accordingly, the power supply line 142 may be easily coupled to the power electrode 110. It is also possible to increase the discharge area to increase the process speed.

In addition, the power electrode 110 of the curvature form and the ground electrode 110 of the curvature form can improve the flow pattern of the process gas. The curvature power electrode 110 and the curvature ground electrode 120 may suppress arc discharge.

In addition, the height h1 of the power electrode 110 may be greater than the height h2 of the ground electrode. Accordingly, at pressures of 5 Torr or less, process uniformity and process speed can be ensured.

The width t2 of the other end of the power electrode 110 may be about 10 mm. In addition, about 10 mm of the width of the other end of the exposed ground electrode 120b may be preferable. In addition, the distance d between the power electrode 110 and the ground electrode 120 may be preferably 3 mm to 15 mm. The substrate 182 may be at least exposed to the plasma. That is, the plasma generator generates a remote plasma, and the active species may be provided to the substrate.

The power distribution unit 140 may be a means for receiving power from the RF power source 170 from the power supply terminal P and transferring power to the power electrodes 110. The power distribution unit 140 may include a power distribution line 144 and a guard unit 146 disposed around the power distribution line 144. The guard part 146 is grounded. Accordingly, the power distribution line 144 and the guard unit 146 form a transmission line. The power distribution unit 140 may be disposed outside the vacuum container 102.

According to a modified embodiment of the present invention, the power distribution unit 140 may be disposed inside the vacuum container 102. The power distribution unit 140 may be disposed between the upper plate and the gas distribution unit.

The power supply line 142 electrically connects the power distribution line 144 and the power electrode 110. In addition, the power supply line 142 may support the power electrode 110. The plurality of power supply lines 142 may be connected to one power electrode 110. Accordingly, the power electrode 110 may be supplied with power in phase at a plurality of points.

The RF power source 170 supplies power to the power distribution line 144 through an impedance matching network 150. The length between the power supply point of the RF power source 170 and the power supply line 142 is the same. Accordingly, the power supply line 142 may supply power to all of the power electrodes 110 in phase. The frequency of the RF power supply 170 may be 1 Mhz or more. Preferably, the frequency of the RF power supply 170 may be 13.56 to 50 Mhz. The impedance matching network 160 may be a means for maximally transferring power of the RF power source 170 to a load.

4 is a view for explaining a plasma generating apparatus according to another embodiment of the present invention. Descriptions overlapping with those described in FIGS. 1 to 3 will be omitted.

Referring to FIG. 4, the plasma generating apparatus includes a vacuum container 102, ground electrodes 220 disposed in the vacuum container 102 and extending in parallel in a first direction, and a second crossing the first direction. Power electrodes 210 disposed between the ground electrodes 220 in a direction, and a dielectric support 250 for mounting the ground electrodes 220 and the power electrodes 210.

The power electrode 210 has a first height h1 in a third direction perpendicular to the first direction and the second direction from a first surface in contact with the dielectric support part 250. The power electrode 210 has a first thickness t1 at the first surface in contact with the dielectric support part 250. The power electrode 210 has a second thickness t2 at one end spaced in the third direction from the first surface.

The ground electrode 220 has a second height h2 from the first surface in contact with the dielectric support part 250. The ground electrode 220 has a third thickness t3 at the first surface in contact with the dielectric support part 250. The ground electrode 220 has a fourth thickness t4 at one end spaced apart from the first surface in the third direction. The first thickness t1 is greater than the second thickness t2, and the third thickness t3 is smaller than the fourth thickness t4. The vertical distance d between the ground electrode 220 and the power electrode 220 is constant.

The first height h1 may be greater than or equal to the second height h2. One end of the ground electrodes 220 and one end of the power electrodes 210 may be processed into a curved surface. An angle between the exposed side surface of the power electrode 210 and the third direction may be 5 degrees to 15 degrees. Alternatively, an angle between the exposed side surface of the ground electrode 220 and the third direction may be 5 degrees to 15 degrees.

The power electrode 210 may have a truncated triangular pillar shape. The ground electrode 220 may have a truncated triangular pillar shape. The ground electrode 220 may be inverted and coupled to the dielectric support part 250 such that the distance d between the power electrode 210 and the ground electrode 220 is constant.

The dielectric support part 250 may include a plurality of nozzles 132 aligned in a first direction. The nozzles 132 may supply process gas between the power electrode 210 and the ground electrode 220. The dielectric support part 250 may be an integral type that is not separated from each other. The ground electrode 220 and the power electrode 220 may be disposed in contact with the bottom surface of the dielectric support part 250.

According to a modified embodiment of the present invention, a portion of the power electrode and a portion of the ground electrode may be inserted into the dielectric support.

5 is a diagram illustrating a substrate processing apparatus according to an embodiment of the present invention. Descriptions overlapping with those described in FIGS. 1 to 3 will be omitted.

Referring to FIG. 5, the substrate processing apparatus includes a plurality of ground electrodes 320 disposed inside the vacuum vessel 102 and extending side by side, and disposed inside the vacuum vessel 120 and the ground electrodes ( Power electrodes 310 interposed between the electrodes 320, and a substrate holder 180 disposed opposite the ground electrodes 320 and the power electrodes 310 and supporting the substrate 182.

The ground electrode 320 and the power supply electrode 310 includes a region where a distance d is constant. The power electrode 310 is tapered in a direction facing the substrate. The power electrodes 310 are connected to the RF power source 170.

The ground electrode 320 includes a tapered portion 320a that increases in width in the substrate direction 182 and an extension portion 320b having a constant width. The ground electrode 320 and the power electrode 310 may be disposed on the bottom surface of the dielectric support part 350.

While the invention has been shown and described with respect to certain preferred embodiments thereof, the invention is not limited to these embodiments, and has been claimed by those of ordinary skill in the art to which the invention pertains. It includes all the various forms of embodiments that can be implemented without departing from the spirit.

110: power electrode
120: ground electrodes
130: gas distribution
150: dielectric support
140: power distribution unit
160: impedance matching network
170: RF power

Claims (28)

A plurality of ground electrodes disposed inside the vacuum vessel and extending side by side; And
A power supply electrode disposed between the ground electrodes,
Constant distance between the ground electrode and the power electrode A discharge region, wherein the power electrode is tapered in a direction facing the substrate,
One end of the power electrodes and the ground electrodes is curved in a direction facing the substrate,
And the power supply electrodes are connected to an RF power supply. The method according to claim 1,
And a height of the power electrode in a direction facing the substrate is greater than that of the ground electrode. The method according to claim 1,
And an angle between a direction extending along one surface of the power electrode and a direction facing the substrate is 5 degrees to 10 degrees. The method according to claim 1,
And a dielectric support on which the ground electrodes and the power electrodes are mounted.
The dielectric support unit includes a plurality of nozzles for injecting a process gas between the ground electrode and the power electrode. 5. The method of claim 4,
And a gas distribution unit disposed on the dielectric support and distributing gas to the nozzle. 5. The method of claim 4,
The process gas is plasma generating apparatus comprising at least one of SiH4 gas, H2 gas, Ar gas, NF3 gas. The method according to claim 1,
A power distribution unit for distributing power to the power electrodes connected in parallel to the RF power source,
The power distribution unit:
Power distribution lines for supplying power to a plurality of points of the power electrode; And
And a guard portion disposed around the power distribution lines and grounded. The method according to claim 1,
The power supply electrode includes at least one hole on the surface facing the ground electrode. The method according to claim 1,
And a spacing between the ground electrode and the power supply electrode is 3 to 10 millimeters. The method according to claim 1,
And the ground electrode includes a tapered portion that increases in width toward the substrate and an extension portion having a constant width. A vacuum vessel;
Ground electrodes disposed in the vacuum chamber and extending in parallel in a first direction;
Power electrodes disposed between the ground electrodes in a second direction crossing the first direction; And
A dielectric support for mounting the ground electrodes and the power electrodes;
The power supply electrode has a first height in a third direction perpendicular to the first direction and the second direction from a first surface in contact with the dielectric support, and the power supply electrode is formed in the first surface in contact with the dielectric support. Has a thickness of one, and the power electrode has a second thickness at one end spaced in the third direction from the first surface,
The ground electrode has a second height from the first face in contact with the dielectric support, the ground electrode has a third thickness in the first face in contact with the dielectric support, and the ground electrode has the Having a fourth thickness at one end spaced in the third direction,
The first thickness is greater than the second thickness, the third thickness is less than the fourth thickness,
One end of the power supply electrodes and the ground electrode is curved in a direction facing the substrate. 12. The method of claim 11,
And the first height is greater than or equal to the second height. delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete

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