KR101141927B1 - Apparatus for metal organic chemical vapor deposition - Google Patents

Abstract

Disclosed is a metal organic chemical vapor deposition apparatus for preventing other gases from flowing into a chamber in which a substrate cleaning process is performed. The metal organic chemical vapor deposition apparatus may include a first reaction chamber in which a first gas is supplied to form the first gas atmosphere, and a cleaning process of a substrate is performed using the first gas; A second reaction chamber which is supplied to be switched from the first gas atmosphere to a second gas atmosphere, and in which the deposition process of the substrate is performed; a first gas supplier supplying the first gas to the first reaction chamber; A second gas supplier for supplying a process gas including a gas and the second gas to the second reaction chamber; a buffer chamber which is respectively opened in the first and second reaction chambers and into and out of the substrate; and the buffer chamber And a conveyor for entering the substrate into and out of the first and second reaction chambers.

Description

Metal organic chemical vapor deposition apparatus {APPARATUS FOR METAL ORGANIC CHEMICAL VAPOR DEPOSITION}

The present invention relates to a metal organic chemical vapor deposition apparatus, and more particularly to a metal organic chemical vapor deposition apparatus for forming a nitride layer on a substrate using a III-V material.

The nitride material is best known as a material for manufacturing a light emitting device. The stacked structure of a light emitting device using a nitride material generally has a buffer layer made of GaN crystals, an n-type doped layer made of n-type GaN crystals, an active layer made of InGaN, and p-type GaN formed on a substrate such as sapphire. It has a structure in which type doping layers are sequentially stacked. Each layer is then sequentially stacked in one metal organic chemical vapor deposition chamber.

In the process of manufacturing such a nitride light emitting device it is common that all processes are performed continuously in one chamber. Therefore, the substrate cleaning process and the deposition process of the substrate must be performed in one chamber.

However, when the substrate cleaning process and the expansion process are performed in one chamber, before performing the cleaning process on the other substrate, a troublesome process of adding a separate process to clean the chamber is generated. There is a problem that the gas is mixed to lower the reliability of the substrate cleaning.

SUMMARY OF THE INVENTION An object of the present invention is to provide a metal organic chemical vapor deposition apparatus which prevents other gas from flowing into a chamber in which a substrate cleaning process is performed.

The metal organic chemical vapor deposition apparatus may include a first reaction chamber in which a first gas is supplied to form the first gas atmosphere, and a cleaning process of a substrate is performed using the first gas; A second reaction chamber which is supplied to be switched from the first gas atmosphere to a second gas atmosphere, and in which the deposition process of the substrate is performed; a first gas supplier supplying the first gas to the first reaction chamber; A second gas supplier for supplying a process gas including a gas and the second gas to the second reaction chamber; a buffer chamber which is respectively opened in the first and second reaction chambers and the substrate enters and exits from the outside; and the buffer And a transporter for accessing the substrate inside the chamber into the first and second reaction chambers.

The first gas may be any one of hydrogen gas and ammonia gas, and the second gas may be nitrogen gas.

The buffer chamber may be configured to supply the first gas and the second gas so that the first gas atmosphere and the second gas atmosphere may be formed.

The metal organic chemical vapor deposition apparatus may further include a heater for heating each of the substrates located in the first and second reaction chambers and the buffer chamber.

The metal organic chemical vapor deposition apparatus extends to the outside to transfer the substrate to the side of the buffer chamber, the conveyor for conveying the substrate discharged from the buffer chamber to the outside; and by the conveyor to the side of the buffer chamber A transfer robot for transferring the transferred substrate to the buffer chamber, the transfer robot for transferring the substrate in the buffer chamber to the conveyor.

The feeder includes a linear feeder linearly moving toward the first and second reaction chambers by supporting the substrate; and the linear transporter along a rail disposed from the side of the first reaction chamber to the side of the second reaction chamber. It may include a rail transfer machine for transferring.

The second transfer robot may transfer the substrate from the first linear conveyor to the second linear conveyor within the buffer chamber.

The metal organic chemical vapor deposition apparatus may further include a plurality of lift pins disposed in the buffer chamber to lift and lower the substrate in the buffer chamber.

The metal organic chemical vapor deposition apparatus according to the present invention has an effect of improving the reliability of substrate cleaning.

Hereinafter, the metal organic chemical vapor deposition apparatus according to the present embodiment will be described in detail with reference to the accompanying drawings.

1 is a plan view schematically showing a metal organic chemical vapor deposition apparatus according to the present embodiment, Figure 2 is a cross-sectional view showing a buffer chamber and the first reaction chamber of the metal organic chemical vapor deposition apparatus according to the present embodiment.

1 and 2, the metal organic chemical vapor deposition apparatus 100 may include first and second reaction chambers 110 and 120 and first and second reaction chambers 110 and 120, respectively, to form independent reaction spaces. First and second gas supply 141 and second reaction chamber 120 and buffer chamber 130 for supplying a first gas to the buffer chamber 130 and the first reaction chamber 110 respectively opened to the first and second reaction chambers 110. A second gas supplier 142 for supplying a process gas containing a gas, respectively.

The first reaction chamber 110 is a chamber used to perform a cleaning and surface nitriding process of the substrate 10 in a first gas atmosphere. The first gas supplier 141 supplies either hydrogen or ammonia gas to the first reaction chamber 110.

The second reaction chamber 120 is a chamber used to form a GaN buffer layer, an undoped GaN layer, and an n-type doped layer in a first gas atmosphere, and to form a p-type doped layer in a second gas atmosphere. The second gas supplier 142 distributes hydrogen, nitrogen, group III, group V, n-type doping gas, and p-plane doping gas to supply the second reaction chamber 120.

Inside the first and second reaction chambers 110 and 120, a susceptor 150 supporting the substrate 10 and a shower head 160 spraying the process gas to the susceptor 150 are disposed. The susceptor 150 is supported by the rotor 151 rotating the susceptor 150, and the susceptor 150 and the rotor 151 may be provided to be detachable.

The buffer chamber 130 is a space in which the substrate 10 to be blocked into the outside and into the first and second reaction chambers 110 and 120 is waiting, and is used to anneal the p-type doped layer. The second gas supplier 142 supplies nitrogen gas to the buffer chamber 130.

Here, the gas used for forming the first gas atmosphere may be either hydrogen gas or ammonia gas, and the gas used for forming the second gas atmosphere may be nitrogen gas. And TMG (Trimethylgallium) and TMI (Trimethyl-indium) are used as Group III gas, NH3 is used as Group V gas, SiH4 or GeH4 is used as n-type doping gas, and Cp2Mg (isoyclopentadienyl-) is used as p-type doping gas. magnesium) can be used.

In the first and second reaction chambers 110 and 120 and the buffer chamber 130, heaters 170 for controlling the temperature of the substrate 10 are respectively disposed. The heater 170 disposed in the first and second reaction chambers 110 and 120 heats the susceptor 150 disposed in the first and second reaction chambers 110 and 120 to support the substrate 10. A heater, a ceramic heater, an RF heater, and the like are used, and the heater 170 used in the buffer chamber 130 is preferably an RF heater adopting an induction heating method.

Meanwhile, the substrate 10 described above may be supplied to the buffer chamber 130 in the form of a single wafer or a satellite susceptor on which at least one wafer is mounted. The conveyor 180 is disposed on the side of the buffer chamber 130 to transfer the substrate 10, and the transfer robot 190 is disposed between the buffer chamber 130 and the conveyor 180.

The conveyor 180 transfers the substrate 10 supplied from the outside to the side of the buffer chamber 130 and transfers the substrate 10 discharged from the buffer chamber 130 to the outside. The transfer robot 190 transfers the substrate 10 transferred to the side of the buffer chamber 130 by the conveyor 180 into the buffer chamber 130, and buffers the substrate 10 inside the buffer chamber 130. The substrate 130 is transferred to the outside of the chamber 130 and transferred to the conveyor 180 so that the substrate 10 is transferred to the outside by the conveyor 180. The transfer robot 190 rotates with a plurality of rotation shafts, and is implemented by adopting a multi-joint robot supporting the substrate 10 at the rotation end.

In addition, the linear conveyor 131 is disposed in the buffer chamber 130. The linear transfer unit 131 transfers the substrate 10 inside the buffer chamber 130 to the first reaction chamber 110 or the second reaction chamber 120, and inside the first reaction chamber 110, or the first reaction chamber 110. 2 The substrate 10 in the reaction chamber 120 is transferred to the buffer chamber 130. The linear conveyor 131 may be implemented by adopting a linear actuator of a hydraulic / pneumatic cylinder type that linearly moves and supports the substrate 10 at the output terminal.

The rail conveyor 132 is disposed in the buffer chamber 130. The rail transfer unit 132 transfers the linear transfer unit 131 to the side of the second reaction chamber 120 from the side of the first reaction chamber 110. The rail transfer unit 132 is a linear linear movement of the EL motor is supported by the buffer chamber 130 is moved along the EL rail extending from the side of the first reaction chamber 110 to the side of the second reaction chamber 120. Actuators can be adopted and implemented.

In addition, a plurality of lift pins 133 for raising and lowering the substrate 10 positioned inside the buffer chamber 130 are disposed in the buffer chamber 130.

In addition, a first gate valve 134 is installed in the buffer chamber 130 to allow the transfer robot 190 to enter and exit. In addition, a second gate valve 111 is installed between the first reaction chamber 110 and the buffer chamber 130 to allow the linear transfer unit 131 to enter and exit, and the second reaction chamber 120 and the buffer chamber ( The third gate valve 121 is installed between the 130 to allow the linear conveyor 131 to enter and exit.

Hereinafter, the operation of the metal organic chemical vapor deposition apparatus according to the present embodiment will be described in detail with reference to the accompanying drawings.

3 to 7 is an operation diagram showing an operating state of the metal organic chemical vapor deposition apparatus according to the present embodiment.

Referring to FIG. 3, the substrate 10 supplied from the outside is transferred to the side of the buffer chamber 130 by the conveyor 180. The buffer chamber 130 is opened by the first gate valve 134, and the substrate 10 is loaded into the buffer chamber 130 by the transfer robot 190 and positioned on the side of the first reaction chamber 110. It is located above the linear conveyor 131. The substrate 10 is supported by a plurality of lift pins 133 that are raised, and the transfer robot 190 is separated from the buffer chamber 130. As the plurality of lift pins 133 descend, the substrate 10 is supported by the linear conveyor 131, and the first gate valve 134 closes the buffer chamber 130. At this time, the internal temperature of the buffer chamber 130 is preferably maintained at 600 degrees Celsius ~ 900 degrees.

Referring to FIG. 4, the first reaction chamber 110 is opened by the second gate valve 111, and the substrate 10 is transferred to the first reaction chamber 110 by the linear transfer unit 131. The substrate 10 transferred to the first reaction chamber 110 is supported by the susceptor 150. The linear conveyor 131 is separated from the first reaction chamber 110, and the first reaction chamber 110 is closed by the second gate valve 111.

Subsequently, the cleaning process of the substrate 10 is performed. That is, the first gas supplier 141 supplies either hydrogen gas or ammonia gas to the first reaction chamber 110, and the first reaction chamber 110 has a first gas atmosphere, that is, a hydrogen gas atmosphere, Or an ammonia gas atmosphere is formed. At this time, the substrate 10 is heated to about 1200 degrees Celsius for a time of about 20 minutes. As the substrate 10 is heat-treated as described above, a foreign material layer such as an oxide film on the substrate 10 is removed.

Referring to FIG. 5, the first reaction chamber 110 is opened by the second gate valve 111, and the substrate 10 is transferred to the buffer chamber 130 by the linear conveyor 131. The first reaction chamber 110 is closed by the gate valve 111. In this case, the second gas supplier 142 supplies any one of hydrogen gas or ammonia gas into the buffer chamber 130 before the substrate 10 is transferred into the buffer chamber 130, thereby providing the inside of the buffer chamber 130. Is preferably formed in a first gas atmosphere.

The rail conveyor 132 transfers the linear conveyor 131 to the side of the second reaction chamber 120. The second reaction chamber 120 is opened by the third gate valve 121, and the substrate 10 is transferred to the second reaction chamber 120 by the linear conveyor 131. The substrate 10 transferred to the second reaction chamber 120 is supported by the susceptor 150. The linear conveyor 131 is separated from the second reaction chamber 120, and the second reaction chamber 120 is closed by the third gate valve 121.

Subsequently, the second gas supplier 142 supplies either hydrogen gas or ammonia gas to the second reaction chamber 120, and the second reaction chamber 120 has a first gas atmosphere, that is, a hydrogen gas atmosphere. , Or an ammonia gas atmosphere is formed.

Subsequently, the GaN buffer layer forming process is performed while the second reaction chamber 120 maintains the first gas atmosphere. The second gas supplier 142 supplies the TMG + NH3 gas to the second reaction chamber 120. At this time, the substrate 10 is reduced to about 600 degrees Celsius for a time of about 30 minutes. As such, the GaN buffer layer formed on the substrate 10 has a thickness of about 20 nm.

Subsequently, the undoped GaN layer forming process is performed while the second reaction chamber 120 maintains the first gas atmosphere. That is, the second gas supplier 142 supplies the TMG + NH3 gas to the second reaction chamber 110. At this time, the substrate 10 is heated to about 1200 degrees Celsius for a time of about 60 minutes. Thus, the undoped GaN layer formed on the GaN buffer layer is formed to a thickness of about 3um or so.

Subsequently, the n-type doped layer forming process is performed in the state where the second reaction chamber 120 maintains the first gas atmosphere. That is, the second gas supplier 142 supplies TMG + NH3 + SiH4 (or GeH4) gas to the second reaction chamber 120. At this time, the substrate 10 maintains about 1200 degrees Celsius for a time of about 60 minutes. As such, the n-type doped layer formed on the undoped GaN layer is formed to a thickness of about 3um.

Subsequently, the second reaction chamber 120 is switched to the second gas atmosphere. That is, the second gas supplier 142 supplies nitrogen gas to the second reaction chamber 120, and the inside of the second reaction chamber 120 forms a second gas atmosphere, that is, a nitrogen gas atmosphere because of the hydrogen gas. .

Subsequently, an active layer forming process is performed. That is, the second gas supplier 142 supplies the TMG + NH3 + TMI gas to the second reaction chamber 120. At this time, the substrate 10 is reduced to 700 degrees Celsius to 900 degrees Celsius for a time of about 80 minutes. As such, the active layer formed on the n-type doped layer is formed to a thickness of approximately 100 nm.

The active layer may be a single quantum well (SQW) structure, or a multi quantum well (MQW) structure having a plurality of quantum well layers. When the active layer has a multi-quantum well structure, the quantum barrier layer and the quantum well layer having different indium contents are alternately formed. And for this purpose, it is possible to control the formation of the active layer by the temperature change as in the present embodiment.

Subsequently, a p-type doping layer forming process is performed. That is, the second gas supplier 142 supplies either hydrogen gas or ammonia gas to the second reaction chamber 120, and the second reaction chamber 120 has a first gas atmosphere, that is, a hydrogen gas atmosphere, Or an ammonia gas atmosphere is formed. In addition, the gas supplier 140 supplies the TMG + NH3 + Cp2Mg gas to the second reaction chamber 120. At this time, the substrate 10 is heated to about 1200 degrees Celsius for a time of about 20 minutes. Thus, the p-type doped layer formed on the active layer is formed to a thickness of about 200nm.

Referring to FIG. 6, the second reaction chamber 120 is opened by the third gate valve 121, and the substrate 10 is transferred to the buffer chamber 130 by the linear conveyor 131. The second reaction chamber 120 is closed by the third gate valve 121. At this time, the buffer chamber 130 is preferably switched to the second gas atmosphere. That is, the second gas supplier 142 supplies nitrogen gas to the buffer chamber 130, and the inside of the buffer chamber 130 is a first gas distributor, thereby forming a second gas atmosphere, that is, a nitrogen gas atmosphere.

Accordingly, since the buffer chamber 130 maintains a temperature of 600 degrees Celsius to 900 degrees Celsius and a nitrogen gas atmosphere is formed, a process environment for annealing the substrate 10 is performed. Therefore, in the buffer chamber 130, the p-type doped layer doped with the p-type dopant may be further lowered by annealing the substrate 10 for about 20 minutes.

Referring to FIG. 7, the buffer chamber 130 is opened by the first gate valve 134, and the plurality of lift pins 133 are raised to raise the substrate 10. The substrate 10 is positioned above the linear transfer machine 131 and is transferred to the conveyor 180 by the transfer robot 190, and is transferred to the outside by the conveyor 180.

Meanwhile, while the process is performed in the second reaction chamber 120, the other substrate 11 is transferred to the first reaction chamber 110 through the buffer chamber 130, and the other substrate 11 is different in the first reaction chamber 110. The cleaning process for the substrate 11 can be started.

Therefore, in this embodiment, it is possible to prevent other gas from flowing into the first reaction chamber 110 to improve the reliability in cleaning the substrate 10, while the deposition process is performed in the second reaction chamber 120. Since the cleaning process may be performed on the other substrate 11 in the first reaction chamber 110, the continuity of the substrate 10 and 11 processing may be imparted, thereby increasing production efficiency.

1 is a plan view schematically showing a metal organic chemical vapor deposition apparatus according to the present embodiment.

2 is a cross-sectional view illustrating a buffer chamber and a first reaction chamber in the metal organic chemical vapor deposition apparatus according to the present embodiment.

3 to 7 is an operation diagram showing an operating state of the metal organic chemical vapor deposition apparatus according to the present embodiment.

Description of the Related Art [0002]

100: metal organic chemical vapor deposition apparatus

110: first reaction chamber

120: second reaction chamber

130: buffer chamber

141: first gas supply

142: second gas supply

Claims (7)

A first reaction chamber in which a first gas is supplied to form the first gas atmosphere, and a substrate cleaning process is performed using the first gas; A second reaction chamber in which the first gas and the second gas are supplied to switch from the first gas atmosphere to the second gas atmosphere, and the deposition process of the substrate is performed; A first gas supplier for supplying the first gas to the first reaction chamber; A second gas supplier for supplying a process gas including the first gas and the second gas to the second reaction chamber; A buffer chamber which is respectively opened to the first and second reaction chambers and which the substrate enters and exits from the outside; and Includes a conveyor for entering and exiting the substrate in the buffer chamber to the first and second reaction chamber, The buffer chamber is And the first gas and the second gas are supplied to form the first gas atmosphere and the second gas atmosphere. The method according to claim 1, The first gas is any one of hydrogen gas and ammonia gas, And the second gas is nitrogen gas. delete The method according to claim 1, The apparatus of claim 1, further comprising a heater configured to heat the substrate located in the first and second reaction chambers and the buffer chamber, respectively. The method according to claim 1, A conveyor extending outward to transfer the substrate to the side of the buffer chamber and transferring the substrate discharged from the buffer chamber to the outside; and And a transfer robot for transferring the substrate transferred to the buffer chamber by the conveyor to the buffer chamber, and transferring the substrate inside the buffer chamber to the conveyor. Device. The method of claim 5, wherein the conveyor A linear transporter supporting the substrate to linearly move toward the first and second reaction chambers; and And a rail transporter for transporting the linear transporter along a rail disposed from a side of the first reaction chamber to a side of the second reaction chamber. The method according to claim 1, And a plurality of lift pins disposed in the buffer chamber to lift and lower the substrate in the buffer chamber.

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