KR101052889B1 - Chemical Vapor Deposition Equipment - Google Patents

Abstract

In the process of forming a thin film of a light emitting device using a gallium nitride compound, a chemical vapor deposition apparatus capable of improving process efficiency and forming a high quality thin film is required. In order to achieve the above object, the chemical vapor deposition apparatus according to the present invention includes a buffer chamber, a plurality of reaction chambers in which a process of forming a thin film coupled to the buffer chamber is performed, and supplying a process gas to the reaction chamber or the buffer chamber. A gas supply unit and a transfer device for carrying in or out of the substrate between the reaction chamber and the buffer chamber, the buffer chamber includes a heater for heating the substrate to buffer a sudden temperature change with respect to the substrate taken out from the reaction chamber.

Description

Chemical Vapor Deposition Equipment {APPARATUS FOR CHEMICAL VAPOR DEPOSITION}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical vapor deposition apparatus, and more particularly, to a chemical vapor deposition apparatus capable of improving process efficiency in a thin film formation process and forming a high quality thin film.

Chemical vapor deposition apparatuses are used to deposit thin films on the surface of semiconductor wafers. The process gas is blown through the gas supply into the chamber to deposit the desired film on the wafer placed on the susceptor.

The proper internal temperature is very important in the deposition of thin film because it greatly affects the quality of thin film. In particular, in the case of an organometallic chemical vapor apparatus (MOCVD), temperature control must be effectively performed to obtain a high efficiency light emitting device.

In the case of LED (Light Emitting Diode), a light emitting device using a gallium nitride compound is widely used.

The thin film structure of a light emitting device using a gallium nitride compound has a buffer layer made of GaN crystals, an n-type doped layer made of n-type GaN crystals, an active layer made of InGaN, and p-type GaN formed on a substrate such as sapphire. A structure in which the type doping layer is sequentially stacked may be applied.

In the prior art, a method is adopted in which the stacked structure is all performed in one chamber. However, according to such a method, there is a problem that the time required for the process is increased.

This is because there is a case where the process must be stopped and waited while raising or lowering the temperature to the required temperature because the required temperature is different for each process step.

In addition, there is a case where the inside of the chamber needs to be cleaned after any one process is completed, because the process must be stopped again while the cleaning operation is in progress.

In the process of forming a thin film of a semiconductor device, a chemical vapor deposition apparatus capable of improving process efficiency and forming a high quality thin film is required.

Technical problems of the present invention are not limited to the above-mentioned technical problems, and other technical problems that are not mentioned will be clearly understood by those skilled in the art from the following description.

Metal organic chemical vapor deposition apparatus according to the present invention for solving the above problems, the buffer chamber; A plurality of reaction chambers coupled to the buffer chamber and performing a process of forming a thin film; A gas supply unit supplying a process gas to the reaction chamber or the buffer chamber; And a transfer device for transporting or carrying a substrate between the reaction chamber and the buffer chamber, wherein the buffer chamber includes a heater that heats the substrate to buffer a sudden temperature change with respect to the substrate taken out of the reaction chamber. .

In addition, the process gas may include a group III gas and a group V gas.

In addition, the Group III gas may be at least one of trimethylgallium, trimethyl-indium, and trimethylaluminium.

In addition, the Group V gas may be ammonia (NH 3).

In addition, the transfer device includes a plurality of pallets on which the substrate or susceptor is loaded; An actuator for carrying out or carrying in the pallet between the reaction chamber and the buffer chamber; And a robot arm installed outside the buffer chamber and entering the opening provided in the buffer chamber to transfer the substrate or the susceptor between the pallets.

In addition, the transfer device includes a plurality of pallets on which the substrate or susceptor is loaded; An actuator for carrying out or carrying in the pallet between the reaction chamber and the buffer chamber and detachable from the pallet; And a conveyor provided inside the buffer chamber and carrying a pallet separated from the actuator.

In addition, the transfer device is a pallet on which the substrate or susceptor is loaded; A roller unit provided inside the buffer chamber and sliding the pallet so that the pallet can be carried or carried in between the reaction chamber and the buffer chamber; And a robot arm installed outside the buffer chamber and entering the opening provided in the buffer chamber to transfer the substrate or susceptor between pallets.

By providing a plurality of reaction chambers, the process efficiency is increased. That is, for example, when fabricating a gallium nitride compound semiconductor, the required temperature may be different for each process, and the next process may be performed by transferring the substrate to a separate reaction chamber preset to the required temperature. Therefore, the process time can be shortened.

In addition, the buffer chamber is provided to prevent the film quality deterioration due to a sudden temperature change. That is, when a substrate having a process completed in one reaction chamber is taken out, a large difference in temperature between the inside of the reaction chamber and the outside may adversely affect the thin film, and thus the buffer chamber may act as a buffer space. In addition, since the substrate may be loaded in a state in which the inside of the buffer chamber is heated to a predetermined temperature, the substrate may be loaded into the reaction chamber of the next step, thereby saving time for heating the substrate, thereby improving process efficiency.

In addition, after any one process is completed, the inside of the chamber may need to be cleaned, and while the inside of the chamber is cleaned, the next process may be performed without interruption by transferring the substrate to another reaction chamber where the next process may be performed. The time can be shortened.

In addition, when the substrate is transferred to the reaction chamber in which the next process is performed, a new substrate may be brought into the existing reaction chamber so that the process may be performed in parallel, thereby increasing the output per unit time.

The technical effects of the present invention are not limited to the above-mentioned effects, and other technical effects not mentioned will be clearly understood by those skilled in the art from the following description.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present embodiment is not limited to the embodiments disclosed below, but can be implemented in various forms, and only this embodiment makes the disclosure of the present invention complete, and the scope of the invention to those skilled in the art. It is provided for complete information. Shapes of the elements in the drawings may be exaggerated parts for a more clear description, elements denoted by the same reference numerals in the drawings means the same element.

1 is a schematic plan view of a chemical vapor deposition apparatus according to a first embodiment.

As shown in FIG. 1, the chemical vapor deposition apparatus according to the first embodiment includes a reaction chamber 100, a buffer chamber 200, a transfer apparatus, a gas supply unit 400, a power supply unit 500, and a control unit 600. Include.

The transfer device includes a substrate supply and discharge device 310, a first pickup device 320, a first actuator 331, a second actuator 332, a third actuator 333, a first robot arm 340, and a first The first pallet 350a, the second pallet 350b, the third pallet 350c, and the second pickup device 370 may be included. The transfer apparatus is not limited to the embodiments described below, and various modifications are possible to carry the substrate in and out of the plurality of reaction chambers and the buffer chamber.

The substrate supply and discharge device 310 may be provided as a conveyor, a transport robot, a pickup robot or a linear actuator as a means for supplying the substrate W to the workplace or discharging the finished substrate to the outside of the workplace.

The first pickup device 320 may be provided as a transport robot or a pickup robot as a means for loading the substrate W on the susceptor S.

As another embodiment, it is also possible to transfer the substrate directly to the next process without loading the substrate into the susceptor. In such an embodiment, the first pickup apparatus may transfer the substrate directly to the pallet.

The substrate may be one wafer, or may be a satellite susceptor on which at least one wafer is seated and detachable from the susceptor.

The first actuator 331, the second actuator 332, and the third actuator 333 may carry the pallet into and out of each reaction chamber or buffer chamber.

As another example, a pallet may be loaded into and out of each reaction chamber or buffer chamber using only one actuator using a sliding drive that slides the actuator laterally. In this case the pallet and the actuator may be configured to be detachable.

The pallet may be carried in or out of each reaction chamber or buffer chamber as a plate member capable of loading a substrate or susceptor.

The first robot arm 340 grips the susceptor to enter the buffer chamber and lowers the susceptor on the upper surface of the first pallet 350a.

In this case, the bottom of each pallet may be provided with a lift pin 380 that can be lifted up and down and the first robot arm 340 on the top of the lift pin 380 in an elevated state to put down the susceptor to exit The lift pin 380 may be lowered to lower the susceptor to the first pallet 350a.

When the buffer chamber gate 214a is opened, the first robot arm 340 may enter the buffer chamber 200 by passing through the buffer chamber gate valve 213a, and the susceptor placed on the first pallet 350a may be formed. The second pallet 350b or the third pallet 350c may be transferred.

The reaction chamber 100 again includes a first reaction chamber 110, a second reaction chamber 120, and a third reaction chamber 130.

The reaction chamber is not necessarily limited to three, but may consist of two, four, five, six and more.

The reason for providing a plurality of reaction chambers is to increase the process efficiency when manufacturing a product requiring a complex process of several steps. That is, for example, when fabricating a gallium nitride compound semiconductor, the required temperature may be different for each process, and the next process may be performed by transferring the substrate to a separate reaction chamber preset to the required temperature. Therefore, the process time can be shortened.

In addition, after any one process is completed, the inside of the chamber may need to be cleaned, and while the inside of the chamber is cleaned, the next process may be performed without interruption by transferring the substrate to another reaction chamber where the next process may be performed. Process time can be shortened.

In addition, when the substrate is transferred to the reaction chamber in which the next process is performed, a new substrate may be brought into the existing reaction chamber so that the process may be performed in parallel, thereby increasing the output per unit time.

Hereinafter, an embodiment will be described based on the case of manufacturing a gallium nitride compound semiconductor.

In the first reaction chamber 110, a process of preheating the substrate may be performed. The gas supply unit 400 may allow the inside to be in a hydrogen atmosphere. Alternatively, the process may be performed in a mixed gas atmosphere of hydrogen and nitrogen. In addition, the substrate W or the susceptor S may be heated and heat treated by a heater (not shown). The temperature at this time can be set, for example, 1000 to 1200 degrees. By such a heat treatment process, a foreign material layer such as an oxide film on a substrate can be removed.

In addition, in the first reaction chamber 110, a process of growing a GaN buffer layer may be performed. The gas supply unit 400 may allow the inside to be in a hydrogen gas atmosphere. In addition, trimethylgallium (TMG) and ammonia gas may be introduced. In addition, the substrate W or the susceptor S may be heated by, for example, 450 degrees to 600 degrees by a heater (not shown). The GaN buffer layer may be grown on the upper surface of the substrate heat-treated by this process.

In addition, in the first reaction chamber 110, a process of growing a GaN buffer layer and then growing an undoped-GaN layer may be performed. When the growth of the GaN buffer layer is completed, the inside of the first reaction chamber 110 is then heated so that the temperature of the substrate is 1000 degrees Celsius to 1100 degrees Celsius, and more specifically 1030 degrees Celsius to 1080 degrees Celsius. As a result, an undoped-GaN layer may be grown on the buffer layer. As such, the process of growing a buffer layer and an undoped-GaN layer on a substrate such as sapphire serves to improve the electrical and crystallographic growth efficiency of the GaN thin film on the sapphire substrate.

In addition, in the first reaction chamber 110, a process of growing an n-type GaN layer (Si or Ge doping) may be performed on the undoped-GaN layer.

The gas supply unit 400 may allow the inside to be in a hydrogen gas atmosphere, and trimethylgallium (TMG) and ammonia gas may be added thereto, and SiH4 or GeH4 may be additionally added to dope Si or Ge. have. In addition, the substrate W or the susceptor S may be heated to about 1000 to 1200 degrees by a heater. By this process, an n-type GaN layer (Si or Ge doping) can be grown on the upper surface of the GaN layer.

In the second reaction chamber 120, a process of growing an active layer may be performed. The gas supply unit 400 may allow the inside to be in a nitrogen (N 2) gas atmosphere, and may introduce trimethylgallium (TMG), trimethylindium (TMI), and ammonia gas. In addition, the substrate W or the susceptor S may be variably adjusted by about 700 degrees to 900 degrees by a heater (not shown). The active layer may be a single quantum well (SQW) structure or a multi-quantum well (MQW) structure having a plurality of quantum well layers.

When forming a multi-quantum well structure, a barrier layer and a quantum well layer having different indium (In) and gallium (Ga) contents may be alternately formed. By this process, the active layer can be grown on the n-type GaN layer (Si or Ge doping).

In the third reaction chamber 130, a process of growing a p-type GaN layer (Mg doping) may be performed. The gas supply unit 400 may be a hydrogen gas atmosphere, trimethylgallium (TMG), isoclopentadienyl-magnesium (Cp2Mg), ammonia gas may be added. In addition, the substrate W or the susceptor S may be variably adjusted by about 900 to 1200 degrees by a heater (not shown). By this process, a p-type GaN layer (Mg doping) may be grown on the top surface of the active layer.

As another embodiment, a process for growing an AlGaN layer may be added. In this case, a heater may be provided to heat the substrate to a predetermined temperature, and the gas supply unit may be provided to supply hydrogen, group III gas (TMA), and group V gas required to form an AlGaN layer.

In another embodiment, an annealing process may be performed in the third reaction chamber 130. For example, the thin film grown in the previous process can be annealed by maintaining 600 to 900 degrees Celsius.

In another embodiment, after the annealing process, a cooling process may be performed or only a cooling process may be performed without the annealing process.

In another embodiment, the third reaction chamber may be provided to irradiate a low energy electron beam irradiation treatment rather than an annealing process.

As another example, the annealing process may be performed in the buffer chamber 200.

The buffer chamber 200 is provided to prevent degradation of the thin film quality due to a sudden temperature change. That is, when a substrate having a process completed in one reaction chamber is taken out, a large difference in temperature between the inside of the reaction chamber and the outside may adversely affect the thin film, and thus the buffer chamber may act as a buffer space. Accordingly, the substrate may be loaded into the other reaction chamber via the buffer chamber instead of being directly carried out from the reaction chamber.

Before the substrate is removed from the first reaction chamber 110, the temperature of the buffer chamber 200 may be adjusted to the same temperature as the last process in the first reaction chamber 110.

In addition, the substrate may be heated to a predetermined temperature in the buffer chamber 200 before the substrate is introduced into the first reaction chamber 110 and the preheating process is performed.

Accordingly, the time for heating to the required temperature in the first reaction chamber 110 can be reduced.

The buffer chamber 200 may be set in a hydrogen atmosphere or a nitrogen atmosphere by the hydrogen (H 2) supply device 410 and the nitrogen (N 2) supply device 420.

First, an unprocessed substrate W (eg, sapphire substrate) may be carried into the buffer chamber 200. In this case, the buffer chamber 200 may be provided to maintain a predetermined temperature (for example, about 700 degrees).

According to another embodiment, only the substrate may be loaded into a pallet and loaded into the reaction chamber.

According to another embodiment, a satellite susceptor for loading a plurality of substrates may be loaded on a pallet, and the satellite susceptor may be loaded on a susceptor provided inside the reaction chamber.

Gas supply unit 400 is hydrogen (H2) supply unit 410, nitrogen (N2) supply unit 420, ammonia (NH3) supply unit 430, SiH4 supply unit 440, trimethylgallium (TMG) supply unit 450, a trimethyl indium (TMI) supply device 460, a Cp 2 Mg supply device 470, and the like.

In this embodiment, an embodiment in which the gas supply unit 400 is provided as one integrated unit is illustrated. In other words, instead of providing a separate gas supply unit for each reaction chamber, each gas source may be provided in one place, and the gas source may be provided by supplying the capacity required by each reaction chamber.

The hydrogen (H 2) supply device 410, the nitrogen (N 2) supply device 420, and the ammonia (NH 3) supply device 430 may include a buffer chamber 200, a first reaction chamber 110, and a second reaction chamber 120. ), The third reaction chamber 130 may be provided to supply hydrogen (H 2), nitrogen (N 2), and ammonia (NH 3), respectively.

As another embodiment, an embodiment in which an apparatus for supplying group V gas other than ammonia NH3 may be provided instead of the ammonia NH3 supply apparatus.

The SiH 4 supply device 440 may be provided to supply SiH 4 to the reaction chamber.

As another embodiment, an embodiment including a device for supplying other n-doped gas (for example, Ge, Sn, etc.) in addition to SiH4 may be possible instead of the SiH4 supply device 440.

The trimethylgallium (TMG) supply apparatus 450 may be provided to supply trimethylgallium (TMG) to the first reaction chamber 110, the second reaction chamber 120, the third reaction chamber 130.

As another embodiment, an embodiment in which a device for supplying other Group III gas other than trimethylgallium (TMG) is possible, not a trimethylgallium (TMG) supply device.

The trimethyl indium (TMI) supply device 460 may be provided to supply trimethyl indium (TMI) to the reaction chamber.

As another embodiment, an embodiment including a device for supplying a Group III gas other than trimethyl indium (TMI) instead of a trimethyl indium (TMI) supply device is also possible.

As another embodiment, when a process of forming an AlGaN layer is included, a trimethylaluminum (TMA) gas supply unit may be provided as a group III gas.

The Cp2Mg supply device 470 may be provided to supply Cp2Mg to the reaction chamber.

As another embodiment, an embodiment in which an apparatus for supplying other p-doped gas (eg, Zn, Ca, Be, etc.) in addition to Mg as a p-doped gas is also possible in some cases.

The power supply unit 500 may supply power to the reaction chamber 100 or the buffer chamber 200. The power supply unit 500 includes a first power supply unit 510, a second power supply unit 520, and a third power supply unit 530 corresponding to each reaction chamber.

The controller 600 may control the reaction chamber 100, the buffer chamber 200, the transfer apparatus, the gas supply unit 400, the power supply unit 500, and the like.

2 is a schematic plan view of a chemical vapor deposition apparatus according to a second embodiment. For convenience of description, parts similar to those of the first embodiment use the same reference numerals.

As shown in FIG. 2, the chemical vapor deposition apparatus according to the second embodiment includes a transfer apparatus, and the transfer apparatus includes a first robot arm 706, a first robot arm transfer rail 705, and a second robot arm. 708, a second robot arm transfer rail 707, a first pallet 702, a second pallet 703, a third pallet 704, and a roller part 701.

The transfer apparatus is not limited to the embodiments described below, and various modifications are possible to carry the substrate in and out of the plurality of reaction chambers and the buffer chamber.

The second robot arm 708 may receive the unprocessed substrate from the substrate supply unit 801 to pick up the substrate, and then load the substrate into the susceptor.

The second robot arm transfer rail 707 allows the second robot arm 708 to slide horizontally in the lateral direction. Accordingly, the second robot arm 708 can move horizontally to the side of the susceptor to be carried out, and can pick up the processed substrate and transfer the substrate to the substrate carrying out portion 804.

The first robot arm 706 may pick up the susceptor from the susceptor supply unit 802, and when the substrate is loaded in the susceptor, the susceptor enters the buffer chamber to lower the susceptor on the pallet.

When the processed susceptor is carried out from the third reaction chamber 130 to the buffer chamber, the susceptor loaded on the third pallet 704 is picked up and taken out to the outside, and the susceptor is transferred to the susceptor carrying unit 803. can do.

The roller part 701 is provided inside the buffer chamber and is rotatable in position in the axial direction so as to slide the first pallet 702 to the first reaction chamber side. The roller portion may comprise one or a plurality of rotatable rollers. The roller and pallet are geared to each other by gears to transmit power.

By this simple configuration, even if installed inside the buffer chamber maintained at a high temperature it is possible to operate reliably without an operation error.

3 is a schematic plan view of a chemical vapor deposition apparatus according to a third embodiment. For convenience of description, parts similar to those of the first embodiment use the same reference numerals.

As shown in FIG. 3, the chemical vapor deposition apparatus according to the third embodiment includes a transfer apparatus, and the transfer apparatus includes a substrate supply and discharge apparatus 310, a first pickup apparatus 320, and a first actuator 331. ), The second actuator 332, the third actuator 333, the first pallet (350a), the second pallet (350b), the third pallet (350c), the first robot arm (340), the second robot arm ( 360a), a third robot arm 360b, and a second pickup device 370.

The transfer apparatus is not limited to the embodiments described below, and various modifications are possible to carry the substrate in and out of the plurality of reaction chambers and the buffer chamber.

The second robot arm 360a may carry the susceptor loaded on the upper surface of the first pallet 350a to the upper surface of the second pallet 350b inside the buffer chamber 200. In addition, the third robot arm 360b may transport the susceptor loaded on the upper surface of the second pallet 350b to the upper surface of the third pallet 350c inside the buffer chamber 200.

In other words, the pallet is movable only in the carry-out direction into each reaction chamber. The second robot arm 360a and the third robot arm 360b may be a heat-resistant material and a heat insulating structure to be stably operated at a temperature of about 1000 degrees Celsius.

In this case, each of the reaction chamber gates may be provided with a lift pin 380 that can be lifted up and down, and the second robot arm 360a lowers the substrate or susceptor on the lift pin 380 in an elevated state. When released, the lift pin 380 may descend to lower the substrate or susceptor on the pallet.

In another embodiment, a conveyor may be provided to linearly transfer the pallet instead of the second robot arm 360a and the third robot arm 360b.

4 is a schematic cross-sectional view A-A 'of the chemical vapor deposition apparatus according to the first embodiment.

As shown in FIG. 4, when the buffer chamber gate valve 214a is opened, the first robot arm 340 passes through the buffer chamber gate 213a to load the susceptor S on the first pallet 350a. Can be.

The process of finally forming the n-type GaN layer in one reaction chamber may be performed at about 1200 degrees, in which case the buffer chamber 200 may be raised to about 1200 degrees in advance. Accordingly, even when the substrate is taken out of the reaction chamber, thermal shock on the substrate may be reduced.

When the process in the first reaction chamber is completed, the first pallet 350a may enter the first reaction chamber 110 to load the susceptor S and return to the buffer chamber 200. As the lift pin 119 is provided on the upper surface of the rotating part 112, the first pallet 350a may load or unload the susceptor S as the susceptor S is elevated.

When the first reaction chamber gate valve 116 provided at the first reaction chamber outlet 110a is opened, the first pallet 350a is carried into the first reaction chamber 110 by passing through the first reaction chamber gate 115. Or may be carried into the buffer chamber 200.

The lift pins 380 on the upper surface of the pedestal 351 are configured to allow the first robot arm 340 to grip the susceptor S carried out in the first reaction chamber 110 to the buffer chamber 200. Will rise. When the lift pin 380 raises the susceptor S as the lift pins 380 rise between the recesses of the pallet, the first robot arm 340 grips the susceptor S, and the second reaction chamber The upper surface of the second pallet 350b placed in front of the gate 125 is loaded.

In another embodiment, a configuration such as a conveyor belt may be applied instead of the first robot arm 340, in which case the pallet and susceptor S are horizontally moved from the first reaction chamber gate to the third reaction chamber gate. Can be transported.

A heater 203 may be installed in the buffer chamber 200 to heat the temperature to 600 degrees Celsius to 900 degrees Celsius. The heater 203 may be an RF heater or a lamp heater which is an induction heating method.

One side wall of the first reaction chamber 110 is provided with a first reaction chamber gate 115 to allow the substrate W or the susceptor S to be carried out or brought into the outside. The first reaction chamber gate 115 is provided with a first reaction chamber gate valve 116. The first reaction chamber gate 115 is connected to the buffer chamber 200.

On the other hand, the first reaction chamber 110 is provided with a shower head 111 for injecting a process gas downward from the inner top.

A heater (not shown) for heating the susceptor at a high temperature may be installed inside the rotating part 112 under the susceptor S. The heater may be provided as a tungsten heater, a ceramic heater or an RF heater. In addition, the susceptor S and the rotation part 112 are rotatably installed by the rotation device 114, and the susceptor S is provided to be separated from and coupled to the rotation part 112 at the upper end of the rotation shaft 113. Can be.

Hereinafter, a chemical vapor deposition method according to the present embodiment will be described.

5 is a flowchart of a chemical vapor deposition method according to the present embodiment.

In addition to the deposition method shown in Figure 5 may be carried out by modifying the type of processes that can be performed in each reaction chamber.

As shown in FIG. 5, a step S10 of first loading a substrate loaded into the buffer chamber into the first reaction chamber may be performed.

That is, as shown in FIG. 1, when the substrate W (eg, a sapphire substrate) is brought into the workplace by the substrate supply and discharge device 310, the first pickup device 320 picks up the substrate W. FIG. Can be loaded into the susceptor (S).

The first robot arm 340 may carry the susceptor S into the buffer chamber 200 through the inlet 212 of the buffer chamber 200.

When the first reaction chamber gate valve 116 is opened, the first pallet 350a may be carried into the first reaction chamber 110 by passing through the first reaction chamber gate 115 by the first actuator 331. have.

At this time, the lift pin is provided on the upper surface of the rotating part so that the susceptor S can be put down, and when the first pallet 350a loaded with the susceptor S is loaded, the lift pin is raised through the recess of the pallet 350. After the susceptor S is lifted up and the first pallet 350a returns to the buffer chamber 200 again, the lift pin may descend.

Next, step S20 of performing a process in the first reaction chamber may be performed.

That is, in the first reaction chamber 110, a process (S21) of preheating the substrate may be performed. Hydrogen gas or a mixed gas of hydrogen and nitrogen may be supplied to the inside by the hydrogen (H 2) supply device 410. In addition, the substrate W or the susceptor S may be heated and heat treated by a heater. The temperature at this time can be set to 1200 degrees, for example. By this pre-heat treatment process, foreign matter layers such as oxide films on the substrate can be removed.

When the preheating process is completed, a process of growing a GaN buffer layer (S23) may be performed. Hydrogen may be supplied to the inside by the hydrogen (H 2) supply device 410. In addition, trimethylgallium (TMG) and ammonia gas may be introduced by the trimethylgallium (TMG) supply device 450 and the ammonia (NH 3) supply device 430. In addition, the substrate W or the susceptor S can be heated to a predetermined temperature (for example, 600 degrees) by a heater. The GaN buffer layer may be grown on the upper surface of the substrate heat-treated by this process.

When the process of growing the GaN buffer layer is completed, a process of growing an undoped-GaN layer (S25) and a process of growing an n-type GaN layer (Si doped) (S27) may be performed.

That is, hydrogen (H2) and trimethylgallium (H2) supply unit 410, trimethylgallium (TMG) supply unit 450, ammonia (NH3) supply unit 430, SiH4 supply unit 440, respectively TMG), ammonia (NH3) and SiH4 can be injected into the reaction chamber. Moreover, the board | substrate W or the susceptor S can be heated, for example by 1200 degree | times with a heater. By this process, a GaN layer can be grown on the GaN buffer layer and an n-type GaN layer (Si doped) can be grown on the GaN layer.

Next, the step S30 of carrying out the substrate carried out from the first reaction chamber into the second reaction chamber via the buffer chamber may be performed.

That is, when the process is completed inside the first reaction chamber 110, the first pallet 350a enters the first reaction chamber 110 again by the first actuator 331 to load the susceptor S. The susceptor S is carried out to the buffer chamber 200.

Meanwhile, while the process is in progress in the first reaction chamber 110, the buffer chamber 200 may be heated to a predetermined temperature so that a sudden temperature change does not occur with respect to the substrate. The heating temperature may be set between about 500 to 1200 degrees Celsius. In some cases, it may be set to about 700 degrees.

Subsequently, the first robot arm 340 may horizontally move the susceptor S to be transferred to the second pallet 350b at the second reaction chamber gate position.

The second pallet 350b may be carried into the second reaction chamber 120 through the second reaction chamber gate 125.

After loading the susceptor S loaded into the second reaction chamber 120 into the rotating unit, the second pallet 350b returns to the buffer chamber 200.

Next, a step (S40) of performing a process in the second reaction chamber may be performed.

That is, in the second reaction chamber 120, a process (S41) of growing the active layer may be performed. Nitrogen (N2) and trimethyl by the nitrogen (N2) supply device 420, trimethylgallium (TMG) supply device 450, trimethyl indium (TMI) supply device 460, ammonia (NH3) supply device 430, respectively Gallium (TMG), trimethylindium (TMI), and ammonia (NH 3) may be injected into the second reaction chamber 120.

In addition, the substrate W or the susceptor S may be variably adjusted by about 700 degrees to 900 degrees by the heater. The active layer may be a single quantum well (SQW) structure or a multi-quantum well (MQW) structure having a plurality of quantum well layers. By this process, the active layer may be grown on the n-type GaN layer (Si doped) formed on the second reaction chamber 120.

Next, the step S50 of carrying out the substrate carried out from the second reaction chamber into the third reaction chamber via the buffer chamber may be performed.

That is, the susceptor S is taken out from the second reaction chamber 120 by the first robot arm 340, the third pallet 350c, and the third actuator 333 and brought into the third reaction chamber 130. can do.

Next, a step (S60) of performing a process in the third reaction chamber may be performed.

That is, in the third reaction chamber 130, a process S61 of growing a p-type GaN layer (Mg doping) may be performed. Hydrogen (H2), trimethylgallium (TMG), by the hydrogen (H2) supply unit 410, trimethylgallium (TMG) supply unit 450, Cp2Mg supply unit 470, ammonia (NH3) supply unit 430 Cp 2 Mg and ammonia (NH 3) may be injected into the third reaction chamber 130, respectively.

In addition, the substrate W or the susceptor S may be variably adjusted by about 1200 degrees by the heater. By this process, a p-type GaN layer (Mg doping) may be grown on the top surface of the active layer.

As another embodiment, a configuration of improving a thin film quality by forming a thin film of a p-type gallium nitride compound semiconductor on a surface doped with a p-type impurity and having an electron gun capable of irradiating an electron beam to the thin film is also applicable. .

Next, an annealing process or cooling process S63 may be performed in the third reaction chamber 130. The interior of the chamber may be set by the nitrogen (N2) supply device 420 to be a nitrogen atmosphere, and may be set by 600-900 degrees Celsius by the heater. The p-type doped layer doped with the p-type dopant by annealing for a predetermined time can further reduce the resistance.

Meanwhile, while the process is in progress in the third reaction chamber 130, the buffer chamber 200 may be heated to a predetermined temperature so that a sudden temperature change does not occur with respect to the substrate. The heating temperature can be set between approximately 500 to 1200 degrees Celsius. In some cases, it may be set to about 700 degrees.

When the annealing process is completed, the third pallet 350c may be carried into the third reaction chamber 130 by the third actuator 333, and the susceptor S may be loaded into the buffer chamber 200.

The cooling process may be performed in the buffer chamber 200 instead of the third reaction chamber. For example, the substrate may be naturally cooled to about 100 to 300 degrees.

Subsequently, the susceptor may be taken out to the outside through the buffer chamber inlet 213a. The susceptor S carried out is transferred to a separate place by the first robot arm 340, and the substrate supply and discharge device is picked up by picking up the substrate W on the upper surface of the susceptor by the second pickup device 370. 310).

As another example, the annealing process may be set to be performed in the buffer chamber instead of the third reaction chamber.

On the other hand, while the process is in progress inside the reaction chamber for one susceptor, it is possible to carry out the process by bringing another susceptor into the other reaction chamber in parallel, there is an effect that the process efficiency is improved.

An embodiment of the present invention described above and illustrated in the drawings should not be construed as limiting the technical idea of the present invention. The protection scope of the present invention is limited only by the matters described in the claims, and those skilled in the art can change and change the technical idea of the present invention in various forms. Therefore, such improvements and modifications will fall within the protection scope of the present invention, as will be apparent to those skilled in the art.

1 is a schematic plan view of a chemical vapor deposition apparatus according to a first embodiment.

2 is a schematic plan view of a chemical vapor deposition apparatus according to a second embodiment.

3 is a schematic plan view of a chemical vapor deposition apparatus according to a third embodiment.

4 is a schematic cross-sectional view A-A 'of the chemical vapor deposition apparatus according to the first embodiment.

5 is a flowchart of a chemical vapor deposition method according to the present embodiment.

Claims (7)

At least one of the plurality of reaction chambers for chemical vapor deposition of a metal organic material thin film by injecting a Group 3 metal gas and Group 5 gas; A buffer connected to the plurality of reaction chambers, the heater being controlled to a predetermined temperature, controlled to a predetermined gas atmosphere, and being opened with each of the plurality of reaction chambers so that the rest of the plurality of reaction chambers is isolated from each other. chamber; Is installed outside of the buffer chamber, enters into the buffer chamber and takes out a susceptor loaded with a substrate from one of the plurality of reaction chambers into the buffer chamber, and then the other into the other of the plurality of reaction chambers. A transfer device configured to carry a susceptor into and out of the buffer chamber; And And a gas supply device for supplying gas into the plurality of reaction chambers and the buffer chamber. The method of claim 1, The Group 3 metal gas includes at least one of trimethylgallium, trimethyl-indium, and trimethylaluminium, and the Group 5 gas includes ammonia and is supplied into the buffer chamber. Gas is a metal organic chemical vapor deposition apparatus containing at least one of hydrogen and nitrogen. The method of claim 1, The heater of the buffer chamber is a metal organic chemical vapor deposition apparatus provided to heat the interior of the buffer chamber 100 to 1200 degrees. The method of claim 1, At least one of the plurality of reaction chambers includes a susceptor rotatably installed therein, and the transfer apparatus enters into the buffer chamber and selects a satellite susceptor on which a substrate is loaded in any one of the plurality of reaction chambers. And a metal organic chemical vapor deposition apparatus which is separated from the susceptor and taken out into the buffer chamber, and then the satellite susceptor is brought into another one of the plurality of reaction chambers and taken out of the buffer chamber. The method of claim 1, The transfer device is a metal organic chemical vapor deposition apparatus including a robot arm for carrying out or carrying in the susceptor between the reaction chamber and the buffer chamber. The method of claim 1, The transfer apparatus includes a plurality of actuators for carrying out or carrying in the susceptor between the reaction chamber and the buffer chamber; And And a robot arm which enters into the buffer chamber and transfers the susceptor from one of the plurality of actuators to the other. delete

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