JP4426632B2 - Plasma processing equipment - Google Patents

Description

  The present invention relates to a plasma processing apparatus used in the manufacture of semiconductor elements, flat panel displays, solar cells, and the like, and in particular, improves film formation speed and generates particles even when the film formation area is large. The present invention relates to a plasma processing apparatus that can be suppressed.

Today, flat panel displays such as semiconductor elements, solar cells, or liquid crystal display panels or plasma display panels are manufactured using etching, sputtering, or CVD (Chemical Vapor Deposition), and high-precision processing is performed. ing.
In the manufacture of semiconductor elements, silicon wafers subjected to processing using plasma (plasma processing) and glass substrates used for flat panel displays are becoming larger and larger. Correspondingly, the decompression processing chamber (chamber) of the processing apparatus for performing plasma processing is also enlarged, and in this decompression processing chamber, the molding accuracy of films formed on various substrates such as semiconductor elements or flat panel displays is greatly affected. There is an increasing need to perform uniform plasma processing by uniformly generating reactive species (radicals) or ions in the reactive plasma to be applied.

As an apparatus for manufacturing a large-sized thin film solar cell, for example, an ECR (Electron Cyclotron Resonance) plasma CVD apparatus or an ICP (Inductively Coupled Plasma) plasma apparatus can be used.
However, in order to generate plasma for obtaining a vapor deposition surface having a large area of about 1 m × 1 m, for example, in an ECR plasma CVD apparatus, the arrangement of a magnetic field generating coil used for a cyclotron and an antenna for a radiated radio wave interfere with each other. It is difficult to realize.

Therefore, an antenna for generating plasma that obtains a vapor deposition surface with a large area of about 1 m × 1 m in a plasma CVD apparatus has been proposed (Patent Document 1).
In Patent Document 1, a plurality of antenna elements made of columnar conductors whose surfaces are covered with a dielectric are alternately arranged in parallel and in a plane with the feeding direction reversed, for generating plasma. An antenna is disclosed. By using the antenna for generating plasma of Patent Document 1, plasma with uniform spatial distribution of electromagnetic waves can be generated, and a vapor deposition surface having a large area of about 1 m × 1 m can be obtained.

Next, a conventional plasma CVD apparatus including the array antenna disclosed in Patent Document 1 will be described.
Here, FIG. 6 is a diagram showing a configuration of a conventional plasma CVD apparatus.
A conventional plasma CVD apparatus 100 shown in FIG. 6 includes a control unit 102, a distributor 104, an impedance matching unit 106, and a rectangular parallelepiped reaction vessel 108. The control unit 102 controls each device of the plasma CVD apparatus 100.

An introduction port 110 is formed in the reaction vessel 108, and a film forming gas supply unit 114 is connected to the introduction port 110 through a gas supply pipe 112. For example, when forming a SiO ₂ film, the deposition gas supply unit 114 uses oxygen gas and TEOS (Tetra-Ethyl-Ortho-Silicate) gas (hereinafter referred to as TEOS gas) as the source gas G. ).

  An exhaust port 116 is formed in the lower wall 108b of the reaction vessel 108. A vacuum exhaust unit 120 that evacuates the reaction vessel 108 is connected to the exhaust port 116 via an exhaust pipe 118. The reaction vessel 108 is provided with a pressure sensor (not shown) for measuring the internal pressure.

  In addition, in the reaction vessel 108, a gas radiation plate 122, an antenna array 126 including a plurality of antenna elements 124, and a substrate stage 128 are provided in this order from the upper wall 108a side. A substrate 130 is placed on the surface 128 a of the substrate stage 128.

  The impedance matching unit 106 is connected to the antenna element 124 and corrects an impedance mismatch caused by a change in the load of the antenna element 124 during plasma generation.

The gas radiation plate 122 diffuses the source gas G introduced from the film forming gas supply unit 114 over a wide area, and has a size over the entire area inside the reaction vessel 108. The gas radiating plate 122 partitions the reaction vessel 108 into two spaces. A space on the upper wall 108 a side of the gas radiation plate 122 is a gas dispersion chamber 132, and a space on the lower wall 108 b side of the gas radiation plate 122 is a reaction chamber 134.
The gas radiation plate 122 has a plurality of through holes 122a. The gas radiation plate 122 is made of metal and is grounded.
The substrate stage 128 is provided with a heater (not shown), and this heater is controlled by the control unit 102.

In the conventional plasma CVD apparatus 100, for example, when a SiO ₂ film is formed on the surface 130a of a substrate 130 such as a glass substrate or a silicon wafer, the pressure in the reaction vessel 108 is set to about 1 Pa to several hundreds Pa by the vacuum exhaust unit 120. In addition, by supplying a high-frequency signal to the antenna element 124, electromagnetic waves are radiated around the antenna element 124.
At this time, the source gas G is supplied from the film forming gas supply unit 114 to the gas dispersion chamber 132, and the source gas G is caused to flow into the reaction chamber 134 from the through hole 122a at a constant flow rate. Then, the source gas G is ionized, and plasma with a uniform spatial density is generated. Thereby, a SiO ₂ film is formed on the surface 130 a of the substrate 130.
Thus, in the conventional plasma CVD apparatus 100, uniform plasma can be generated. Therefore, even if the area is as large as 1 m × 1 m, an SiO ₂ film can be formed on the surface 130 a of the substrate 130. it can.

JP 2003-86581 A

As described above, the conventional plasma CVD apparatus 100 can form the SiO ₂ film on the surface 130a of the substrate 130 even if the area is large. However, the generated plasma reaches the antenna element 124, that is, the antenna element 124 is disposed in the plasma, and the electric field distribution is extremely high in the vicinity of the surface 124a of the antenna element 124. For this reason, in the vicinity of the surface 124a of the antenna element 124, the source gas G is excessively decomposed by the plasma. Thereby, for example, when an SiO ₂ film is formed on the surface 130 a of the substrate 130, an excessive reaction product such as SiO ₂ is generated by the plasma and does not contribute to the film formation on the surface 124 a of the antenna element 124. Adhesion and further deposition. Thus, there is a problem in that the proportion of SiO ₂ that contributes to the film formation is reduced and the film formation rate is reduced.
Further, there is a problem that SiO ₂ (reaction product) deposited on the surface 124a of the antenna element 124 becomes particles and causes an increase in particles in the processing chamber 134. Due to the increase of the particles, the film quality of the formed film may be deteriorated.

  An object of the present invention is to provide a plasma processing apparatus that solves the problems based on the above-described conventional technology and can improve the film forming speed and suppress the generation of particles even when the film forming area is large. There is to do.

In order to achieve the above object, the present invention provides a plasma processing apparatus for processing a substrate to be processed using a first source gas and a second source gas, wherein the substrate to be processed is disposed on a surface. And a plurality of antenna elements, which are provided above the substrate stage and are composed of rod-shaped conductors whose surfaces are covered with a dielectric, are arranged with a predetermined gap with respect to a plane substantially parallel to the surface of the substrate stage. A gas generator comprising: a plasma generator that generates plasma using the antenna array; and a gas radiator plate that is provided so as to cover the plasma generator and has a plurality of gas radiation ports provided above the antenna array. And the first source gas so as to radiate from a part of the plurality of gas radiation ports of the gas radiation plate toward the surface of the substrate stage and pass through the surface of the antenna element. A second source gas that radiates toward the surface of the substrate stage from the first gas supply unit to be supplied and the other part of the plurality of gas radiation ports of the gas radiation plate and passes through the gap between the antenna elements. A second gas supply unit for supplying
The plasma generation unit generates plasma using the antenna array in a state where the first source gas and the second source gas are supplied to the plasma generation unit,
The first raw material gas is a gas selected from the group consisting of argon, oxygen gas, hydrogen gas, and nitrogen gas .

  At this time, the plurality of gas radiation ports of the gas radiation plate are formed to open to the plasma generation unit, and the gas radiation plate is perpendicular to the surface of the substrate stage among the gas radiation ports. When viewed from the direction, a partition that forms a flow path is provided so as to be connected to all the gas radiation ports formed in the first region that matches the position of the antenna element. All the gas radiating ports formed in one region are isolated from other gas radiating ports formed in other regions, and the first source gas from the first gas supply section is the flow path And radiates from all the gas emission ports formed in the first region, whereby the first source gas passes through the surface of the antenna element and is supplied toward the surface of the substrate stage, Second source from second gas supply Gas is emitted from the other gas emitting opening, thereby, the second raw material gas passes through the gap between the antenna elements, it is preferably fed towards the surface of the substrate stage.

  Alternatively, the plurality of gas radiation ports of the gas radiation plate are formed so as to open to the plasma generation unit, and the gas radiation plate of the gas radiation ports has a direction perpendicular to the surface of the substrate stage. When viewed from the above, a partition that forms a flow path is provided so as to be connected to all the gas radiation ports formed in the second region aligned with the region of the gap of the antenna element. All the gas radiating ports formed in the second region and other gas radiating ports formed in other regions are isolated, and the first source gas from the first gas supply unit is the other The first source gas passes through the surface of the antenna element and is supplied toward the surface of the substrate stage, and the second source gas is supplied from the second gas supply unit. Through the flow path, the Emitted from all of the gas emission opening formed in the second region, thereby, the second source gas above through the gap between the antenna elements, it is equally preferred that the supplied toward the surface of the substrate stage.

  The first source gas is preferably oxygen gas, and the second source gas is preferably TEOS gas.

Furthermore, the present invention is a plasma processing apparatus that performs processing on a processing target substrate using a first source gas and a second source gas, the substrate stage on which the processing target substrate is disposed, and the substrate stage Provided is an antenna array in which a plurality of antenna elements, which are provided above and are composed of rod-shaped conductors whose surfaces are covered with a dielectric, are arranged with a predetermined gap with respect to a plane substantially parallel to the surface of the substrate stage. A plasma generator, a gas radiator provided to cover the plasma generator, provided above the antenna array, and including a gas radiation plate having a plurality of gas radiation ports; and on an array surface of the antenna array the provided in each gap between the antenna elements of the plasma generator, the second gas discharge member of the hollow apertured hole to face said substrate stage has a plurality of formed A plurality of second gas discharge portions, a first gas supply portion for supplying the first source gas from the gas radiation plate toward the surface of the substrate stage, and the second source gas for discharging the second gas. A second gas supply unit that supplies the substrate stage toward the surface of the substrate stage,
The plasma generation unit generates plasma using the antenna array in a state where the first source gas and the second source gas are supplied,
The first raw material gas is a gas selected from the group consisting of an inert gas, an oxygen gas, a hydrogen gas, and a nitrogen gas .

The first source gas is preferably oxygen gas, and the second source gas is preferably TEOS gas.
Further, when the gas radiation plate is viewed from a direction perpendicular to the surface of the substrate stage, the gas radiation port of the gas radiation plate is located in a region aligned with the position of the antenna element, and is located in the region. It is preferable that the first source gas radiated from the gas radiation port that passes through the surface of the antenna element.

Furthermore, the present invention is a plasma processing apparatus for processing a substrate to be processed using a raw material gas, the substrate stage on which the substrate to be processed is disposed, a dielectric stage provided above the substrate stage, Generation of plasma using an antenna array in which antenna elements composed of rod-shaped conductors whose surfaces are covered with a plurality of predetermined gaps are arranged with respect to a plane substantially parallel to the surface of the substrate stage And a gas radiating portion provided to cover the plasma generating portion and provided above the antenna array, and a first source gas from the gas radiating portion toward the surface of the substrate stage And a first gas supply unit for supplying the first source gas and the second source gas so as to radiate the second source gas, and the substrate stage from the gas emission unit To emit a third gas toward the surface, anda third gas supply unit for supplying the third gas,
The gas radiation plate includes a plurality of gas discharge ports that open to the plasma generation unit, and the gas radiation plate of the gas radiation plate is perpendicular to the surface of the substrate stage. When viewed from the direction, a partition that forms a flow path is provided so as to be connected to all the gas radiation ports formed in the first region that matches the position of the antenna element. All the gas radiating ports formed in one region and other gas radiating ports formed in other regions are isolated, and the third gas from the third gas supply unit Radiating from all gas emission ports formed in the first region through the path, whereby the third gas passes through the surface of the antenna element and is supplied toward the surface of the substrate stage, The first from the first gas supply unit The source gas and the second source gas are radiated from the other gas radiation port, whereby the first source gas and the second source gas pass through the gap between the antenna elements and the substrate stage. The plasma generating unit is configured to generate plasma using the antenna array in a state where the first source gas, the second source gas, and the third gas are supplied. A plasma processing apparatus is provided.

  The source gas is preferably a mixed gas of oxygen gas and TEOS gas, and the third gas is preferably an inert gas.

According to the plasma processing apparatus of the present invention, the first source gas is supplied to the surface of the substrate stage through the surface of the antenna element, and the second source gas is supplied to the surface of the substrate stage through the gap of the antenna element. Even if a reaction product is generated by the first source gas and the second source gas by generating plasma using the antenna array in a state where the first source gas is supplied, the first source material is provided around the antenna element. Since the gas is supplied, reaction products are prevented from adhering or depositing on the antenna element. In addition, even if the second source gas contains a component that easily adheres to the antenna element, the first source gas is supplied around the antenna element, so that the adhesion is suppressed. . For this reason, generation of particles is suppressed.
Furthermore, since the reaction product is prevented from adhering or depositing on the antenna element, the utilization efficiency of the first source gas and the second source gas is increased, and the film formation rate is improved. For these reasons, even when the deposition area is large, the deposition rate can be improved and the generation of particles can be suppressed.

  In addition, according to the plasma processing apparatus of the present invention, the third gas different from the source gas is supplied to the surface of the substrate stage through the surface of the antenna element, passes through the gap of the antenna element, and enters the surface of the substrate stage. Since the third gas is supplied around the antenna element by generating plasma using the antenna array while the source gas is being supplied toward the antenna element, a reaction product is generated in the antenna element. Adhesion or deposition is suppressed. For this reason, generation of particles is suppressed. Furthermore, since the reaction product is prevented from adhering or depositing on the antenna element, the utilization efficiency of the source gas is increased and the film formation rate is improved. For these reasons, even when the deposition area is large, the deposition rate can be improved and the generation of particles can be suppressed.

It is a figure which shows the structure of the plasma CVD apparatus which concerns on 1st Embodiment of the plasma processing apparatus of this invention. It is a typical top view which shows the antenna array of the plasma CVD apparatus of this embodiment. It is a figure which shows the structure of the plasma CVD apparatus which concerns on 2nd Embodiment of the plasma processing apparatus of this invention. It is a figure which shows the structure of the plasma CVD apparatus which concerns on 3rd Embodiment of the plasma processing apparatus of this invention. (A) is a typical perspective view which shows an example of the 2nd source gas discharge | release part of the plasma CVD apparatus which concerns on 3rd Embodiment of the plasma processing apparatus of this invention, (b) is FIG. 5 (a). FIG. 6C is a schematic cross-sectional view of the second source gas discharge member of the second source gas discharge portion shown in FIG. 5, and FIG. 5C is another view of the second source gas discharge member of the second source gas discharge portion shown in FIG. It is a typical sectional view showing the example. It is a figure which shows the structure of the conventional plasma CVD apparatus.

Explanation of symbols

10, 50, 60, 100 Plasma CVD apparatus (CVD apparatus)
DESCRIPTION OF SYMBOLS 12 Control part 14 Distributor 16 Impedance matching device 18 Reaction container 22 Inlet 23 Gas supply pipe 24 Exhaust outlet 25 Exhaust pipe 26 1st gas supply part 27 Vacuum exhaust part 28 2nd gas supply part 40, 52, 62 Gas Radiation unit 30 Antenna array 32 Antenna element 33 Gap 34 Substrate stage 36 Substrate 38 Gas dispersion chamber 39 Reaction chamber 70 Second source gas discharge unit

Hereinafter, a plasma processing apparatus of the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.
FIG. 1 is a diagram showing a configuration of a plasma CVD apparatus according to the first embodiment of the plasma processing apparatus of the present invention.

The plasma CVD apparatus 10 (hereinafter referred to as a CVD apparatus 10) shown in FIG. 1 of the present embodiment uses an oxygen gas Gf as a first source gas (active species gas) and uses a TEOS gas Gs as a second source gas. An example in which a SiO ₂ film is formed on the surface 36a of a substrate (processing target substrate) 36 such as a glass substrate or a silicon wafer will be described. In the plasma processing apparatus of the present invention, the film formed on the substrate 36 is not limited to the SiO ₂ film.

  A CVD apparatus 10 shown in FIG. 1 includes a control unit 12, a distributor 14, an impedance matching unit 16, and a rectangular parallelepiped reaction vessel 18. The control unit 12 controls each device of the CVD apparatus 10 as will be described later. The reaction vessel 18 is made of metal or alloy and is grounded.

An inlet 22 is formed in the upper wall 18a of the reaction vessel 18. A gas supply pipe 23 is connected to the introduction port 22. Further, a second gas supply unit 28 is connected to the gas supply pipe 23.
The second gas supply unit 28 supplies, for example, TEOS gas Gs (second source gas) into the reaction vessel 18. The second gas supply unit 28 includes, for example, a tank (not shown) filled with liquid TEOS, a vaporization unit (not shown) for vaporizing the liquid TEOS, and a flow rate for adjusting the flow rate of the vaporized TEOS. An adjustment unit (not shown) is provided. In the second gas supply unit 28, TEOS gas Gs (second raw material gas) is obtained by vaporizing the liquid TEOS by the vaporization unit, and the flow rate of the TEOS gas Gs is adjusted by the flow rate adjustment unit, so that the TEOS gas Gs is generated. The reaction vessel 18 is supplied.

  An exhaust port 24 is formed in the lower wall 18 b of the reaction vessel 18. An exhaust pipe 25 is connected to the exhaust port 24. Further, a vacuum exhaust unit 27 is connected to the exhaust pipe 25. The vacuum exhaust unit 27 has a vacuum pump such as a dry pump and a turbo molecular pump. The reaction vessel 18 is provided with a pressure sensor (not shown) for measuring the internal pressure.

  In addition, a substrate stage 34 and a substrate 36 placed on the surface 34 a are provided in the reaction container 18 in order from the lower wall 18 b side, and an antenna array including a plurality of antenna elements 32 is provided above the substrate stage 34. A (plasma generating unit) 30 is provided, and further, a gas radiating unit 40 (gas radiating plate 42) is provided above the antenna array 30 so as to cover the antenna array 30.

Here, FIG. 2 is a schematic plan view showing an antenna array of the plasma CVD apparatus of the present embodiment.
As shown in FIG. 2, the antenna array 30 includes a plurality of predetermined gaps (intervals) 33 in which a plurality of antenna elements 32 are parallel to each other (not shown) substantially parallel to the surface 34 a of the substrate stage 34. Are arranged and arranged. The antenna array 30 is provided on the lower side (the lower wall 18b side) of the gas radiation unit 40. The antenna element 32 is also provided with a predetermined gap 33 with respect to the side walls 18c and 18d. In the present invention, the gap 33 between the antenna element 32 and the side walls 18c and 18d is handled in the same manner as the gap 33 between the antenna elements 32.

  Further, in the antenna array 30, each antenna element 32 is disposed across two opposing side walls 18 c and 18 d of the reaction vessel 18. The antenna array 30 (each antenna element 32) is provided in parallel to the gas radiation plate 42 (see FIG. 1) of the gas radiation section 40 (see FIG. 1) and the surface 34a (see FIG. 1) of the substrate stage 34. ing.

The antenna element 32 is a monopole antenna, and is electrically insulated and attached to openings (not shown) formed in the side walls 18e and 18f of the reaction vessel 18.
As shown in FIG. 2, the antenna array 30 protrudes from the side walls 18e and 18f in the reaction vessel 18 in the opposite directions to the adjacent antenna elements 32, and the feeding direction is opposite. These antenna elements 32 are connected to the impedance matching unit 16 on the high-frequency current supply end side. The impedance matching unit 16 is a matching box.

  The impedance matching unit 16 is used together with adjustment of the frequency of the high-frequency signal generated by the high-frequency power source of the control unit 12 to correct an impedance mismatch caused by a change in the load of the antenna element 32 during plasma generation. Is.

Each antenna element 32 has a rod shape (may be a pipe) made of a conductor having high electrical conductivity, and is (2n + 1) / 4 times the wavelength of the high frequency used (n is 0 or a positive integer). Is the radiation length of the antenna element which is a monopole antenna.
Each antenna element 32 is housed in a cylindrical member 37 made of a dielectric such as quartz, and the surface of each antenna element 32 is covered with a dielectric such as quartz. Thus, the capacity | capacitance and inductance as the antenna element 32 are adjusted by covering a rod-shaped conductor with a dielectric material. Thereby, a high frequency current can be efficiently propagated along the longitudinal direction of the antenna element 32, and an electromagnetic wave can be efficiently radiated. Hereinafter, the surface of the antenna element 32 refers to the surface 37a of the cylindrical member 37, not the surface of the rod-shaped conductor.

  In the present embodiment, the impedance matching device 16 is provided, and as will be described later, the electromagnetic wave formed in a mirror image relationship by grounding the metal film formed on the gas radiating portion 40 (gas radiating plate 42). To form a predetermined electromagnetic wave for each antenna element 32. Furthermore, since the antenna elements 32 constituting the antenna array 30 have the feeding direction opposite to that of the adjacent antenna elements 32, electromagnetic waves are uniformly formed in the reaction chamber 39.

Here, as shown in FIG. 1, in the substrate stage 34, the substrate 36 is placed on the surface 34a as described above. In the substrate stage 34, the substrate 36 is placed with the center of the substrate stage 34 and the center of the substrate 36 aligned with each other.
In addition, a heating element (not shown) for heating the substrate 36 is provided inside the substrate stage 34, and a grounded electrode plate (not shown) is further provided. The heating element is connected to the control unit 12, and heating by the heating element is controlled by the control unit 12.
The electrode plate may be connected to a bias power source (not shown), and a predetermined bias voltage may be applied to the electrode plate by the bias power source.

Moreover, as shown in FIG. 1, the gas radiation | emission part 40 is the gas radiation | emission plate 42 which consists of SiC, for example, and the several through-hole about 0.3-1.0 mm in diameter is formed. These through holes become the gas discharge ports 44. Further, in the gas radiation portion 40, a metal film is formed on the surface of the gas radiation plate 42 and is grounded.
In the present embodiment, the gas radiating plate 42 of the gas radiating unit 40 has a size over the entire area inside the reaction vessel 18 and is provided so as to cover the antenna array 30. The inside of the reaction vessel 18 is partitioned into two spaces by the gas radiating portion 40, the space on the upper wall 18 a side of the gas radiating portion 40 is a gas dispersion chamber 38, and the gas radiating portion 40 has a lower wall 18 b side. The space is the reaction chamber 39.
The gas radiating unit 40 diffuses the gas supplied to the gas dispersion chamber 38 into the reaction chamber 39 over a wide area. In the present embodiment, the gas radiating unit 40 diffuses the TEOS gas Gs introduced from the second gas supply unit 28 into the reaction chamber 39 over a wide area.

Further, in the gas radiating unit 40, when the gas radiating plate 42 is viewed from the direction perpendicular to the surface 34 a of the substrate stage 34, the first radiating unit 40 matches the position of the antenna element 32 of the antenna array 30 provided below. Each gas radiation port 44 formed in the region 42a and a region that does not match the position of the antenna element 32, that is, a second region 42b that matches the region between the antenna element 32 and the antenna element 32 (gap 33), A flow path 46 is formed by a partition for isolating each gas radiation port 44 in the second region 42b that is aligned between the antenna element 32 and the wall surface of the reaction vessel 18 (gap 33).
The flow paths 46 are connected (communication) to all the gas radiation ports 44 formed in the first region 42 a aligned with the antenna element 32, and all the gas radiation ports 44 are connected via the flow paths 46. For example, oxygen gas Gf (first source gas) can be supplied.
The channel 46 is formed by providing a U-shaped partition wall member on the surface of the gas radiation plate 42 along the direction in which the antenna element 32 extends. The first gas supply unit 26 is connected to the flow path 46.

The first gas supply unit 26 includes, for example, a gas cylinder (not shown) and a flow rate adjustment unit (not shown), and the gas cylinder is filled with oxygen gas Gf. By the first gas supply unit 26, the oxygen gas Gf is supplied from the gas emission port 44 to the periphery of the surface 37 a of the antenna element 32 over the entire length direction of the antenna element 32 through the flow path 46. Further, it is supplied into the reaction chamber 39.
In addition, the gas emission port 44 of the second region 42b that does not match the position of the antenna element 32 communicates with the gas separation chamber 38 and the reaction chamber 39, and the TEOS gas Gs supplied to the gas separation chamber 38 is allowed to pass through the reaction chamber. 39 is supplied.

As described above, in the gas radiating portion 40, the gas formed in the first region 42 a among the plurality of gas radiating ports 44 by the flow path 46 is another gas formed in the second region 42 b. It is isolated from the radiation port 44. For this reason, the TEOS gas Gs supplied from the second gas supply unit 28 is not released from the gas emission port 44 formed in the first region 42a. For this reason, the oxygen gas Gf supplied via the flow path 46 is supplied around the surface 37 a of the antenna element 32. Therefore, the gas radiation unit 40 supplies the oxygen gas Gf around the surface 37a of the antenna element 32 without supplying the TEOS gas Gs.
Note that the gas supplied from the first gas supply unit 26 via the flow path 46 is not limited to oxygen gas, and the surface 37a of the antenna element 32 among the gases supplied for film formation. In addition, any material that does not adhere or deposit or has a small degree of adhesion or deposition may be used.
As described above, the gas radiation unit 40 of the present embodiment isolates the supply path of the oxygen gas Gf and does not isolate the supply path of the TEOS gas Gs.

  The control unit 12 has a high-frequency oscillation circuit, a high-frequency power source (not shown) composed of an amplifier, and a current / voltage sensor (not shown), and the oscillation frequency of the high-frequency power source according to the detection signal of the current / voltage sensor. And the adjustment of the impedance matching unit 16 are performed. The control unit 12 controls the frequency of the high-frequency signal common to the antenna elements 32 to bring all the antenna elements 32 close to the impedance-matched state, and thereafter, the impedance matching unit 16 connected to each antenna element 32. Thus, the impedance of each antenna element 32 is individually adjusted. The control unit 12 and the plurality of impedance matching units 16 are connected via a distributor 14. The control unit 12 also controls the feeding of a high frequency signal to the antenna element 32.

The first gas supply unit 26, the second gas supply unit 28, and the vacuum exhaust unit 27 are also controlled by the control unit 12.
The control unit 12 controls the supply timing and flow rate of the oxygen gas Gf (first raw material gas) in the first gas supply unit 26. Further, the control unit 12 controls the supply timing, the flow rate, and the like of the TEOS gas Gs in the second gas supply unit 28. Furthermore, the control unit 12 can exhaust the raw material gas and the like in the reaction vessel 18 and further adjust the pressure in the reaction vessel 18 to a desired pressure.

In the present embodiment, for example, when the SiO ₂ film is formed, the TEOS gas Gs introduced from the first gas supply unit 26 flows from the upper wall 18a side to the lower wall 18b side (hereinafter referred to as the upper side) in the reaction vessel 18. The direction from the wall 18a side to the lower wall 18b side flows in the “vertical direction” and is discharged from the exhaust port 24. As will be described later, this TEOS gas Gs is activated in the reaction vessel 18 and mixed with the oxygen gas Gf that has been excited and made into a reactive species in the process up to the discharge. Become.

  In the present embodiment, the control unit 12 causes the pressure in the reaction vessel 18 to be in a state of about 1 Pa to several hundreds Pa by the evacuation unit 27, and oxygen gas Gf (first source gas) is supplied to the antenna element through the flow path 46. The TEOS gas Gs is supplied from the gas radiation port 44 of the gas radiation plate 42 through the periphery of the surface 37a of the gas. Furthermore, an electromagnetic wave is radiated around the antenna element 32 by feeding a high-frequency signal to the antenna element 32. As a result, plasma (not shown) is generated in the vicinity of the antenna element 32 in the reaction vessel 18 and the oxygen gas Gf (active species gas) radiated from the gas radiating unit 40 is excited to generate oxygen radicals (reactions). Active species). At that time, since the generated plasma has conductivity, the electromagnetic wave radiated from the antenna element 32 is easily reflected by the plasma. For this reason, the electromagnetic wave is localized in a local region around the antenna element 32. As described above, in the antenna array 30 having a plurality of antenna elements 32 each formed of a monopole antenna, plasma is localized and formed in the vicinity of the surface 37 a of the antenna element 32, and the electric field distribution around the surface 37 a of the antenna element 32. Becomes extremely high.

  A detailed description of the principle of plasma generation using such an antenna array is described in Japanese Patent Application Laid-Open No. 2003-86581, which is an earlier application by the present applicant. A detailed impedance matching method for each antenna in a plasma generation apparatus using an antenna array is described in Japanese Patent Application No. 2005-014256, which is an earlier application filed by the present applicant. As the antenna array and the detailed impedance matching method for each antenna in the present invention, for example, the methods described in the above specifications may be used.

Next, a film forming method of the CVD apparatus 10 according to the present embodiment will be described using an SiO ₂ film as an example.
First, an oxygen gas Gf (active species gas) is flowed from the first gas supply unit 26 into the flow path 46 at a constant flow rate, and a gas radiation port formed in the first region 42 a that matches the arrangement position of the antenna element 32. The oxygen gas Gf is supplied from 44 around the surface 37a of the antenna element 32, and the oxygen gas Gf is caused to flow into the reaction chamber 39 at a constant flow rate. At this time, the TEOS gas Gs is discharged from the second gas supply unit 28 through the gas supply pipe 23 to the gas dispersion chamber 38 at a constant flow rate, and the flow path 46 of the radiating unit 40 is not provided, and the gas dispersion is performed. The gas is allowed to flow into the reaction chamber 39 from the gas emission port 44 formed in the second region 42 b communicating with the chamber 38 at a constant flow rate.
When supplying the oxygen gas Gf and the TEOS gas Gs, the reaction vessel 18 (reaction chamber 39) is evacuated by the vacuum exhaust unit 27, and the inside of the reaction vessel 18 (reaction chamber 39) is The pressure is maintained at about 1 Pa to several hundred Pa. Thereby, the oxygen gas Gf and the TEOS gas Gs flow in the vertical direction of the reaction vessel 18 (reaction chamber 39).

Next, a high frequency signal is fed to the antenna element 32 to radiate electromagnetic waves around the antenna element 32. As a result, plasma localized in the vicinity of the antenna element 32 is generated in the reaction chamber 39, and oxygen radicals (reactive active species) from which the oxygen gas Gf (active species gas) emitted from the gas discharge port 44 is dissociated are generated. ) Is obtained. Further, TEOS radicals (activated TEOS gas) obtained by dissociating TEOS gas are obtained.
In the vicinity of the periphery of the antenna element 32 of the antenna array 30, oxygen radicals (reactive species) and TEOS radicals are mixed to form a mixed gas. When oxygen radicals (reactive active species) in an active state and TEOS radicals are mixed, a SiO ₂ film is formed on the surface 36a of the substrate 36 by active energy in the active state.

In the present embodiment, the flow path 46 is formed in the radiating portion 40, and only the oxygen gas Gf (first source gas) is supplied to the surface 37 a of the antenna element 32, and the TEOS gas Gs passes through the gap 33 ( And is supplied to the processing chamber 39. Since only the oxygen gas Gf is supplied to the surface 37a of the antenna element 32 in this way, even when plasma is generated using the antenna array 30, only the oxygen gas Gf exists on the surface 37a of the antenna element 32. Thereby, adhesion or deposition of reaction products such as SiO ₂ is suppressed on the surface 37 a of the antenna element 32. In this manner, since the reaction product such as SiO ₂ is prevented from adhering or depositing on the surface 37a of the antenna element 32, the generation of particles is suppressed. Furthermore, since generation of particles is suppressed, an excellent film quality of the film to be formed (SiO ₂ film) can be obtained.
Furthermore, in this embodiment, since the adhesion of reaction products such as SiO ₂ to the surface 37a of the antenna element 32 is suppressed, the oxygen gas Gf and the TEOS gas Gs used for forming the SiO ₂ film are reduced. Since the ratio (utilization efficiency) increases, the film forming speed is also improved.
Even if the substrate 36 is a large one of about 1 m × 1 m, for example, the antenna array 30 can generate uniform plasma, and the generation of particles is suppressed as described above. Since the film forming speed is high, it is possible to form a SiO ₂ film having excellent film quality faster than before.

In the present embodiment, a source gas supply unit (not shown) is provided instead of the second gas supply unit 28, and a third gas supply unit (see FIG. 5) is provided instead of the first gas supply unit 26. (Not shown) may be provided.
In this case, the source gas supply unit is for supplying source gas necessary for obtaining a film to be formed on the surface 36 a of the substrate 36 into the reaction vessel 18. For example, when a SiO ₂ film is formed on the surface 36a of the substrate 36, a mixed gas of oxygen gas (first raw material gas) and TEOS gas (second raw material gas) is supplied as the raw material gas.

The raw material gas supply unit includes a gas cylinder (not shown) corresponding to the type and number of gases according to the film to be formed, and a flow rate adjusting unit (not shown) that adjusts the flow rate of the gas from the gas cylinder. It is to be prepared. In this embodiment, the gas cylinder is filled with oxygen gas (first source gas).
The source gas supply unit supplies a TEOS gas Gs with a tank (not shown) filled with a liquid, a vaporization unit (not shown) for vaporizing the liquid, and a gas vaporized by the vaporization unit. A flow rate adjusting unit (not shown) for adjusting the flow rate is provided. In the present embodiment, the tank is filled with liquid TEOS, and is vaporized by the vaporization unit to obtain TEOS gas Gs (second raw material gas). The flow rate adjustment unit adjusts the flow rate of the TEOS gas Gs.
In the present embodiment, a source gas in which oxygen gas (first source gas) and TEOS gas (second source gas) are mixed is supplied from the source gas supply unit to the gas separation chamber 38.
The third gas supply unit is for supplying a gas (third gas) that is not used for film formation other than the source gas, for example, oxygen gas Gf and TEOS gas Gs. The third gas supply unit includes, for example, a gas cylinder (not shown) and a flow rate adjustment unit (not shown), and the gas cylinder is filled with a gas that is not used for film formation. In the present embodiment, for example, the gas to be filled is an inert gas such as argon gas or nitrogen gas.

In such a configuration, the source gas supplied from the source gas supply unit is supplied at a constant flow rate into the reaction chamber 39 from the gap 33 between the antenna elements 32 and the gap 33 between the antenna elements 32 and the wall of the reaction vessel 18. Let it flow in. Further, a gas (third gas) that is not used for film formation is supplied from the third gas supply unit to the antenna element 32 from the gas radiation port 44 formed in the first region 42 a that matches the arrangement position of the antenna element 32. And is diffused into the reaction chamber 39. In this way, the source gas (mixed gas of oxygen gas (first source gas) and TEOS gas (second source gas)) and gas (third gas) are supplied into the reaction chamber 39, and the antenna is supplied. Plasma is generated using the array 30. Thereby, oxygen radicals are obtained, the TEOS gas is activated, and a SiO ₂ film is formed on the surface 36 a of the substrate 36.

In this case, gas is supplied around the surface 37a of the antenna element 32 to isolate the periphery of the surface 37a of the antenna element 32 from the source gas, and the source gas is surrounded around the surface 37a of the antenna element 32. Will not be supplied. For this reason, it is suppressed that source gas adheres or adheres to the surface 37a of the antenna element 32. FIG. Thereby, generation | occurrence | production of a particle is suppressed and also the film-forming speed | rate can be improved.
Thus, instead of the second gas supply unit 28, a source gas supply unit (not shown) is provided, and instead of the first gas supply unit 26, a third gas supply unit (not shown) is also provided. Even when the configuration is provided, an effect similar to that of the first embodiment in which a film having excellent film quality can be formed at a high deposition rate can be obtained.

Next, a second embodiment of the present invention will be described.
FIG. 3 is a diagram showing a configuration of a plasma CVD apparatus according to the second embodiment of the plasma processing apparatus of the present invention.
In the present embodiment, the same components as those in the plasma CVD apparatus according to the first embodiment shown in FIGS. 1 and 2 are denoted by the same reference numerals, and detailed description thereof is omitted.

  As shown in FIG. 3, the plasma CVD apparatus 50 of the present embodiment has a first gas supply unit 26 and a second gas supply as compared with the plasma CVD apparatus 10 (see FIG. 1) of the first embodiment. The arrangement position of the unit 28 and the configuration of the gas radiation unit 52 are different, and other configurations are the same as those of the heat treatment apparatus 10 of the first embodiment, and detailed description thereof is omitted.

In the plasma CVD apparatus 50 of the present embodiment, the first gas supply unit 26 is connected to the reaction vessel 18 via the gas supply pipe 23. The oxygen gas Gf is supplied from the first gas supply unit 26 to the gas separation chamber 38.
Further, the gas radiating unit 52 of the present embodiment, unlike the gas radiating unit 40 (see FIG. 1) of the first embodiment, supplies the TEOS gas Gs without isolating the supply path of the oxygen gas Gf. Isolate the road.

The gas radiating unit 52 of the present embodiment has basically the same configuration as that of the gas radiating unit 40 (see FIG. 1) of the first embodiment. For example, the gas radiating plate 54 made of SiC has a diameter. A plurality of through-holes of about 0.5 mm are formed. These through holes become the gas discharge ports 56. Further, the gas radiating portion 52 is also grounded because a metal film is formed on the surface of the gas radiating plate 54.
The gas radiation part 52 diffuses the oxygen gas Gf introduced from the first gas supply part 26 over a wide area.
In the present embodiment, the gas radiation plate 54 of the gas radiation part 52 also has a size over the entire area inside the reaction vessel 18 and is provided so as to cover the antenna array 30. By the gas radiating portion 52, the inside of the reaction vessel 18 is partitioned into two spaces. In the reaction vessel 18, the space on the upper wall 18 a side of the gas radiating portion 52 is the gas dispersion chamber 38, and the space on the lower wall 18 b side of the gas radiating portion 52 is the reaction chamber 39.

  Further, in the gas radiating portion 52, when the gas radiating plate 54 is viewed from the direction perpendicular to the surface 34a of the substrate stage 34, the gap between the antenna element 32 and the antenna element 32 provided below (gap 33). And the gas emission ports 56 formed in the second region 54b aligned with the space between the antenna element 32 and the wall surface of the reaction vessel 18 (gap 33). A flow path 58 is formed by a partition wall on the surface of the gas radiation plate 54 along the direction in which the antenna element 32 extends so as to be isolated from the gas radiation port 56 formed in the first region 54a matching the above.

The flow path 58 is formed between the antenna element 32 and the antenna element 32 (gap 33) and the second region 54b, and between the antenna element 32 and the side walls 18c and 18d of the reaction vessel 18 (gap 33). For example, TEOS gas Gs is supplied to all the gas emission ports 56 via the flow path 58, which is connected (communication) with all the gas emission ports 56 formed in the second region 54b to be aligned. Can do.
The flow path 58 is formed by providing a U-shaped partition wall member on the surface of the gas radiation plate 54 along the direction in which the antenna element 32 extends. The second gas supply unit 28 is connected to the flow path 58.
The second gas supply unit 28 causes the TEOS gas Gs from the gas radiation port 56 to extend over the entire area in the length direction of the antenna element 32 through the flow path 58, and the antenna element 32. 32 is supplied into the reaction chamber 39 through a gap 33 between the side walls 18 c and 18 d of the reaction vessel 18.

  In the gas radiating portion 52, the one formed in the second region 54 b among the plurality of gas radiating ports 56 by the flow path 58 is formed in the first region 54 a that matches the arrangement position of the antenna element 32. It is isolated from the other gas emission ports 56. For this reason, the TEOS gas Gs supplied from the second gas supply unit 28 is radiated from the gas emission port 56 formed in the second region 54 b via the flow path 58. That is, the TEOS gas Gs flows into the reaction chamber 39 from the gap 33 of the antenna element 32 at a constant flow rate.

On the other hand, around the surface 37 a of the antenna element 32 of the gas radiation plate 52, oxygen gas passes from the gas radiation port 56 formed in the first region 54 a through the gas dispersion chamber 38 from the first gas supply unit 26. Gf flows into the reaction chamber 39 at a constant flow rate.
As described above, the gas emission unit 50 supplies the oxygen gas Gf around the surface 37a of the antenna element 32 without supplying the TEOS gas Gs.
As described above, plasma is generated using the antenna array 30 in a state where the oxygen gas Gf and the TEOS gas are supplied into the reaction chamber 39. Thereby, oxygen radicals are obtained, the TEOS gas is activated, and a SiO ₂ film is formed on the surface 36 a of the substrate 36.

In the plasma CVD apparatus 50 of this embodiment, the TEOS gas Gs is supplied from the gap 33 between the antenna elements 32 and the gap 33 between the antenna elements 32 and the wall surface of the reaction vessel 18 through the flow path 58. On the other hand, the oxygen gas Gf is supplied from the gas radiation plate 52 around the surface 37a of the antenna element 32 to isolate the periphery of the surface 37a of the antenna element 32 from the TEOS gas Gs. For this reason, adhesion or adhesion to the surface 37a of the antenna element 32 is suppressed. Thereby, generation | occurrence | production of a particle is suppressed and also the film-forming speed | rate can be improved. For this reason, a film having excellent film quality can be formed at a high deposition rate.
In addition, since uniform plasma can be generated by the antenna array 30, even if the substrate is a large one of about 1 m × 1 m, for example, a SiO ₂ film or the like can be formed with an excellent film quality. In addition, the film can be formed at a high film formation rate.

  Further, in the plasma CVD apparatus 50 of the present embodiment, since the oxygen gas Gf is supplied to the gas radiating unit 52, a part of the gas component is not deposited at the gas radiating port 56. For this reason, generation | occurrence | production of a particle is suppressed and the maintenance of the gas radiation | emission part 52 can also be simplified.

  Furthermore, in the film forming method using the plasma CVD apparatus 50 of the present embodiment, the TEOS gas Gs is isolated from the periphery of the surface 37a of the antenna element 32 and the TEOS gas Gs is supplied. Adhesion to 37a is suppressed, and the same effect as in the first embodiment can be obtained.

  In the present embodiment, a third gas supply unit (not shown) is provided instead of the first gas supply unit 26 and the second gas supply unit 28 is used instead of the first gas supply unit 26 as in the first embodiment. A source gas supply unit (not shown) may be provided. In this case, the configuration of the source gas supply unit and the third gas supply unit is the same as that of the first embodiment.

In such a configuration, the raw material gas is supplied from the gas radiation port 56 located in the gap 33 between the antenna elements 32 from the raw material gas supply section via the flow path 58 and the gap 33 between the antenna element 32 and the wall surface of the reaction vessel 18. Into the reaction chamber 39 at a constant flow rate. Further, a gas (third gas) that is not used for film formation from the third gas supply unit through the gas emission port 54 that matches the arrangement position of the antenna element 32 is spread over the entire area in the length direction of the antenna element 32. Then, it is supplied to the surface 37 a of the antenna element 32 and diffused into the reaction chamber 39. In this way, the source gas (mixed gas of oxygen gas (first source gas) and TEOS gas (second source gas)) and gas (third gas) are supplied into the reaction chamber 39, and the antenna is supplied. Plasma is generated using the array 30. Thereby, oxygen radicals are obtained, the TEOS gas is activated, and a SiO ₂ film is formed on the surface 36 a of the substrate 36.

In this case, gas is supplied around the surface 37a of the antenna element 32 to isolate the periphery of the surface 37a of the antenna element 32 from the source gas, and the source gas is surrounded around the surface 37a of the antenna element 32. Will not be supplied. For this reason, it is suppressed that source gas adheres or adheres to the surface 37a of the antenna element 32. FIG. Thereby, generation | occurrence | production of a particle is suppressed and also the film-forming speed | rate can be improved.
Thus, instead of the second gas supply unit 28, a raw material gas supply unit (not shown) is provided, and instead of the first gas supply unit 26, a third gas supply unit (not shown) is provided. Even when the configuration is provided, an effect similar to that of the first embodiment in which a film having excellent film quality can be formed at a high deposition rate can be obtained.

Next, a third embodiment of the present invention will be described.
FIG. 4 is a diagram showing a configuration of a plasma CVD apparatus according to the third embodiment of the plasma processing apparatus of the present invention. FIG. 5A is a schematic perspective view showing an example of the second source gas discharge part of the plasma CVD apparatus according to the third embodiment of the plasma processing apparatus of the present invention, and FIG. It is a typical sectional view of the 2nd source gas discharge member of the 2nd source gas discharge part shown in a), and (c) is the 2nd source gas discharge member of the 2nd source gas discharge part shown in Drawing 5 (a). It is a typical sectional view showing other examples.
In the present embodiment, the same components as those in the plasma CVD apparatus according to the first embodiment shown in FIGS. 1 and 2 are denoted by the same reference numerals, and detailed description thereof is omitted.

  As shown in FIG. 4, the plasma CVD apparatus 60 of the present embodiment has a first gas supply unit 26 and a second gas supply as compared with the plasma CVD apparatus 10 (see FIG. 1) of the first embodiment. The arrangement position of the part 28 and the configuration of the gas radiating unit 62 are different, and further the second raw material gas discharge unit 70 is provided. Other configurations are the same as those of the heat treatment apparatus 10 of the first embodiment. Since it is the same structure, the detailed description is abbreviate | omitted.

In the plasma CVD apparatus 60 of the present embodiment, the first gas supply unit 26 is connected to the reaction vessel 18 via the gas supply pipe 23. The oxygen gas Gf is supplied from the first gas supply unit 26 to the gas separation chamber 38.
Further, the gas radiating unit 62 of the present embodiment is different from the gas radiating unit 40 (see FIG. 1) of the first embodiment in that the flow path 46 is not formed. The configuration is the same as that of the gas radiation unit 40 (see FIG. 1) of the first embodiment.
Also in this embodiment, the inside of the reaction vessel 18 is partitioned into two spaces by the gas radiating unit 62, and the space on the upper wall 18 a side of the gas radiating unit 62 is the gas dispersion chamber 38. A space on the lower wall 18 b side is a reaction chamber 39. Further, the gas radiating unit 62 of the present embodiment also diffuses the oxygen gas Gf (first source gas) introduced from the first gas supply unit 26 into the gas separation chamber 38 into the reaction chamber 39 over a wide area. .

The second source gas discharge unit 70 of the present embodiment is configured so that the TEOS gas Gs (second source gas) is supplied from the gas radiation port located in the gap 33 of the antenna array 30 in the middle of the flow of the oxygen gas Gf (first source gas). ) In the reaction chamber 39.
As shown in FIG. 5A, the second source gas discharge unit 70 includes a second source gas discharge member 72, connection pipes 74 a and 74 b, and a connection pipe 76, and below the gas emission part 62. Is provided.

  The second source gas discharge member 72 is formed of a tubular member whose both ends are bent, and a longitudinal surface of the second source gas discharge member 72 is formed on the peripheral surface opposite to the side bent inward. A plurality of holes 78 (see FIG. 5B) that are open to the surface 34a of the substrate stage 34 and have a predetermined size are formed along the direction. The hole 78 is a second source gas discharge port.

In the second source gas discharge part 70, for example, seven second source gas release members 72 are arranged side by side with a gap 73 of a predetermined interval. The antenna element 32 is disposed at the position of each gap 73. In each second raw material gas release member 72, a portion bent inward is inserted into a hole 64 formed in the gas release plate 42 and protrudes upward from the gas release plate 42. Further, the end portions of the respective second source gas discharge members 72 are connected by connecting pipes 74a and 74b, respectively. A connecting pipe 76 is connected to the connecting pipe 74b. A second gas supply unit 28 (see FIG. 4) that supplies a second source gas is connected to one of the connecting pipes 76.
Further, in the second source gas discharge part 70, the second source gas release member 72, the connecting pipes 74a and 74b, and the connecting pipe 76 are all in communication. Accordingly, when the TEOS gas Gs is supplied from the second gas supply unit 28, the TEOS gas Gs enters the substrate stage 34 from the holes 78 of the second raw material gas discharge members 72. It spouts towards.

Further, as shown in FIG. 5A, the second source gas discharge unit 70 is arranged so that each of the second source gas discharge members 72 is positioned at the gap 33 of the antenna array 30 so that the holes 78 face the substrate stage 34. It arrange | positions in the reaction container 18 so that it may come to. With this configuration, in this embodiment, the TEOS gas Gs enters the reaction chamber 39 from a position closer to the surface 34 a of the substrate stage 34 (the surface 36 a of the substrate 36) than the gap 33 of the antenna array 30 and the gas radiating unit 62. Can be supplied.
Also in the present embodiment, plasma is generated using the antenna array 30 in a state where the oxygen gas Gf and the TEOS gas are supplied into the reaction chamber 39. Thereby, oxygen radicals are obtained, the TEOS gas is activated, and a SiO ₂ film is formed on the surface 36 a of the substrate 36.

  In the second source gas release part 70, the hole 78 of the second source gas release member 72 allows the TEOS gas Gs to be uniformly released with respect to the surface 34a of the substrate stage 34 (the surface 36a of the substrate 36). As long as it is formed, the shape and the arrangement pattern are not particularly limited. For example, as shown in FIG. 5 (c), holes 78a and 78b are formed on the lower peripheral surface of the second source gas discharge member 72a at positions facing each other in the cross section of the tube orthogonal to the longitudinal direction. Also good.

In the plasma CVD apparatus 60 of the present embodiment, the TEOS gas Gs is released from the holes 78 of the second source gas discharge portions 72 provided in the gaps 33 of the antenna array 30, so that the TEOS gas Gs is released around the surface 37 a of the antenna element 32. The TEOS gas Gs does not flow in. Further, oxygen gas Gf is supplied from the gas discharge port around the surface 37a of the antenna element 32.
For this reason, it is further suppressed that SiO ₂ produced by the reaction of the oxygen gas Gf and the TEOS gas Gs adheres to or accumulates on the surface 37a of the antenna element 32. As a result, the generation of particles is further suppressed, and the utilization efficiency of the oxygen gas Gf and the TEOS gas Gs is increased, so that the film formation rate can be improved. Therefore, a film with excellent film quality can be formed at a high film formation rate. Thus, also in this embodiment, the same effect as that of the first embodiment can be obtained.

Further, in the plasma CVD apparatus 60 of the present embodiment, the second source gas discharge unit 70 is provided, the TEOS gas Gs is supplied separately, and the TEOS gas from a position closer to the substrate stage 34 (substrate 36) than the gas emission unit 62 is provided. By supplying Gs, the TEOS gas Gs can be uniformly emitted toward the entire surface 34a of the substrate stage 34. Thereby, the uniformity of the film forming speed can also be improved.
Furthermore, in the plasma CVD apparatus 60 of the present embodiment, since the oxygen gas Gf is supplied to the gas radiating unit 62, a part of the components of the gas supplied to the gas gas radiating port 66 of the gas radiating unit 62 may be deposited. Absent. For this reason, generation | occurrence | production of a particle is suppressed and the maintenance of the gas radiation | emission part 62 can also be simplified.

Also in the film forming method using the plasma CVD apparatus 60 of the present embodiment, the substrate stage 34 is more than the gas radiating unit 62 from each hole 78 of each second source gas discharge member 72 provided in the gap 33 of the antenna element 32. Since the TEOS gas Gs is released from a position close to, the periphery of the surface 37a of the antenna element 32 is isolated from the TEOS gas Gs, and the oxygen gas Gf and the TEOS gas Gs are supplied. Further, since SiO ₂ (reaction product) is also generated on the substrate 36 side with respect to the antenna array 30, it is further suppressed that SiO ₂ adheres to the surface 37 a of the antenna element 32. As a result, the generation of particles is further suppressed, and the utilization efficiency of the oxygen gas Gf and the TEOS gas Gs is increased, so that the film formation rate can be improved. As described above, similarly to the first embodiment, adhesion to the surface 37a of the antenna element 32 is suppressed, and the same effect as that of the first embodiment can be obtained.

In the present embodiment, a uniform mixed gas of oxygen gas Gf (reactive activated species gas) and TEOS gas Gs is generated near the surface 36a of the substrate 36. Thus, for example, a SiO ₂ film can be uniformly formed on the surface of the substrate 36. That is, it is possible to form a SiO ₂ film excellent in film thickness uniformity.
Further, since the antenna array 30 can generate uniform plasma, even if the substrate is a large one of about 1 m × 1 m, for example, a SiO ₂ film having excellent film thickness uniformity is formed. can do.

  In the present embodiment, as in the first embodiment, instead of the first gas supply unit 26, a raw material gas supply unit (not shown) is provided, and instead of the second gas supply unit 28, It is good also as a structure which provides a 3rd gas supply part (not shown). In this case, the configuration of the source gas supply unit and the third gas supply unit is the same as that of the first embodiment.

In such a configuration, the third gas supply unit causes the gas (third gas) that is not used for film formation to flow from the gas emission port 44 of the gas emission unit 62 over the entire length of the antenna element 32. Then, it is supplied to the surface 37 a of the antenna element 32 and diffused into the reaction chamber 39. Further, the source gas supplied from the source gas supply unit via the second source gas discharge unit 70 is caused to flow into the reaction chamber 39 at a constant flow rate. In this way, the source gas (mixed gas of oxygen gas (first source gas) and TEOS gas (second source gas)) and gas (third gas) are supplied into the reaction chamber 39, and the antenna is supplied. Plasma is generated using the array 30. Thereby, oxygen radicals are obtained, the TEOS gas is activated, and a SiO ₂ film is formed on the surface 36 a of the substrate 36.

In this case, the source gas is separated from the gap 33 between the antenna elements 32 from the holes 78 of the second source gas discharge portions 72 provided in the gap 33 of the antenna array 30 separately from the gas (third gas). Supply. Further, gas is supplied around the surface 37a of the antenna element 32 to isolate the periphery of the surface 37a of the antenna element 32 from the source gas, and the source gas is supplied around the surface 37a of the antenna element 32. It will not be done. For this reason, it is suppressed that source gas adheres or adheres to the surface 37a of the antenna element 32. FIG. Thereby, generation | occurrence | production of a particle is suppressed and also the film-forming speed | rate can be improved.
Thus, instead of the second gas supply unit 28, a source gas supply unit (not shown) is provided, and the source gas is supplied from the second source gas discharge unit 70, and the first gas supply unit 26 is provided. Instead of this, even in the case where a third gas supply unit (not shown) is also provided, a film having excellent film quality can be formed at a high film formation rate as in the first embodiment. An effect can be obtained.

In any of the above-described CVD apparatuses, the apparatus for forming the SiO ₂ film on the surface 36a of the substrate 36 has been described as an example. However, the plasma processing apparatus of the present invention is not limited to this. The plasma processing apparatus of the present invention can be used to form various films in semiconductor elements, flat display panels such as liquid crystal display panels or plasma display panels, and solar cells. Furthermore, the plasma processing apparatus of the present invention can be used as an etching apparatus, and can also be used for a substrate stage cleaning process.

  In any of the above-described CVD apparatuses, the plasma generation unit uses the antenna array 30 in which a plurality of monopole antennas are arranged, thereby generating plasma by localizing in the vicinity of the antenna array 30. It is. With this configuration, the substrate 36 and the antenna array 30 can be arranged relatively close to each other in a state where the plasma is not directly exposed to the substrate 36 placed on the substrate stage 34. Thereby, the distance between the antenna array 30 and the substrate 36 can be made sufficiently close to the excitation lifetime of oxygen radicals (reactive active species) excited in the vicinity of the antenna array 30. That is, oxygen radicals (reactive active species) can reach the surface of the substrate in a sufficiently excited state.

Further, in any of the above-described CVD apparatuses, in order to form a SiO ₂ film on the surface 36a of the substrate 36, two types of oxygen gas Gf (first source gas) and TEOS gas Gs (second source gas) are used. Although described using gas, the present invention is not limited to this. The types and number of gases used for the first source gas and the second source gas are appropriately selected according to the type of film to be formed. As the first source gas, when it is exposed to the surface 37a of the antenna element 32, no deposit is generated on the surface 37a or the amount of the surface 37a is less than that of the second source gas. I just need it.

Furthermore, as the first source gas, for example, nitrogen gas, hydrogen gas, and argon gas can be used in addition to oxygen gas. Furthermore, as the second source gas, a gas for forming a film other than the first source gas is used, and for example, a gas containing a metal compound is used.
For example, when forming a silicon film, hydrogen gas is used as the first source gas, and silane gas is used as the second source gas. Even in this case, the effect of the present invention can be obtained.
Furthermore, for example, when two types of gases are mixed and used for film formation or etching, a gas containing a component that adheres to and deposits on the surface of the antenna element is formed around the surface of the antenna element. If such a gas is supplied from the gap between the antenna elements without being supplied, the type of gas used is not particularly limited.

  Although the plasma processing apparatus of the present invention has been described in detail above, the present invention is not limited to the above-described embodiment, and various modifications and changes may be made without departing from the spirit of the present invention. is there.

Claims (9)

A plasma processing apparatus for processing a substrate to be processed using a first source gas and a second source gas,
A substrate stage on which the substrate to be treated is disposed;
An antenna element, which is provided above the substrate stage and is composed of a rod-shaped conductor whose surface is covered with a dielectric, is arranged with a plurality of predetermined gaps with respect to a plane substantially parallel to the surface of the substrate stage. A plasma generation unit for generating plasma using an antenna array;
A gas radiating unit including a gas radiating plate provided to cover the plasma generating unit and having a plurality of gas radiating ports provided above the antenna array;
A first gas supply unit for supplying a first source gas so as to radiate from a part of a plurality of gas radiation ports of the gas radiation plate toward the surface of the substrate stage and pass through the surface of the antenna element;
A second gas supply unit configured to supply a second source gas so as to radiate toward the surface of the substrate stage from other portions of the gas radiation ports of the gas radiation plate and pass through the gap between the antenna elements; Have
The plasma generation unit generates plasma using the antenna array in a state where the first source gas and the second source gas are supplied to the plasma generation unit,
The plasma processing apparatus, wherein the first source gas is a gas selected from the group consisting of argon, oxygen gas, hydrogen gas and nitrogen gas . The plurality of gas radiation ports of the gas radiation plate are formed so as to open to the plasma generation unit, and the gas radiation plate of the gas radiation ports is viewed from a direction perpendicular to the surface of the substrate stage. In this case, a partition that forms a flow path is provided so as to be connected to all the gas emission ports formed in the first region that is aligned with the position of the antenna element. All the gas radiating ports formed in the above and other gas radiating ports formed in other areas are isolated,
The first source gas from the first gas supply unit is radiated from all the gas emission ports formed in the first region through the flow path, whereby the first source gas is radiated from the antenna. Supplied through the surface of the element toward the surface of the substrate stage,
The second source gas from the second gas supply unit radiates from the other gas radiating port, whereby the second source gas passes through the gap between the antenna elements and faces the surface of the substrate stage. The plasma processing apparatus according to claim 1 supplied. The plurality of gas radiation ports of the gas radiation plate are formed so as to open to the plasma generation unit, and the gas radiation plate of the gas radiation ports is viewed from a direction perpendicular to the surface of the substrate stage. In this case, a partition that forms a flow path is provided so as to be connected to all the gas radiation ports formed in the second region that is aligned with the region of the gap between the antenna elements. All gas emission ports formed in this area and other gas emission openings formed in other areas are isolated,
The first source gas from the first gas supply unit radiates from the other gas emission port, whereby the first source gas passes through the surface of the antenna element and faces the surface of the substrate stage. Supplied,
The second source gas from the second gas supply unit radiates from all the gas emission ports formed in the second region through the flow path, whereby the second source gas is supplied to the antenna. The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus is supplied toward a surface of the substrate stage through an element gap.   The plasma processing apparatus according to any one of claims 1 to 3, wherein the first source gas is an oxygen gas, and the second source gas is a TEOS gas. A plasma processing apparatus for processing a substrate to be processed using a first source gas and a second source gas,
A substrate stage on which the substrate to be treated is disposed;
An antenna element, which is provided above the substrate stage and is composed of a rod-shaped conductor whose surface is covered with a dielectric, is arranged with a plurality of predetermined gaps with respect to a plane substantially parallel to the surface of the substrate stage. A plasma generator comprising an antenna array;
A gas radiating unit including a gas radiating plate provided to cover the plasma generating unit, provided above the antenna array, and having a plurality of gas radiating ports;
A plurality of hollow second gas discharge members provided in the respective gaps of the antenna elements of the plasma generation unit on the array surface of the antenna array and having a plurality of holes opened so as to face the substrate stage A second gas discharge part comprising:
A first gas supply unit for supplying the first source gas from the gas radiation plate toward the surface of the substrate stage;
A second gas supply unit configured to supply the second source gas through the second gas discharge unit toward the surface of the substrate stage;
The plasma generation unit generates plasma using the antenna array in a state where the first source gas and the second source gas are supplied,
The plasma processing apparatus, wherein the first source gas is a gas selected from the group consisting of argon, oxygen gas, hydrogen gas and nitrogen gas .   The plasma processing apparatus according to claim 5, wherein the first source gas is an oxygen gas, and the second source gas is a TEOS gas.   When the gas radiation plate is viewed from a direction perpendicular to the surface of the substrate stage, the gas radiation port of the gas radiation plate is located in a region aligned with the position of the antenna element, and the gas located in the region. The plasma processing apparatus according to claim 5 or 6, wherein the first source gas radiated from a radiation port passes through a surface of the antenna element. A plasma processing apparatus for processing a target substrate using a source gas,
A substrate stage on which the substrate to be treated is disposed;
An antenna element, which is provided above the substrate stage and is composed of a rod-shaped conductor whose surface is covered with a dielectric, is arranged with a plurality of predetermined gaps with respect to a plane substantially parallel to the surface of the substrate stage. A plasma generation unit for generating plasma using an antenna array;
A gas radiating unit provided to cover the plasma generating unit and including a gas radiating plate provided above the antenna array;
A first gas supply unit that supplies the first source gas and the second source gas so as to radiate the first source gas and the second source gas from the gas emission unit toward the surface of the substrate stage;
A third gas supply part for supplying the third gas so as to radiate a third gas from the gas emission part toward the surface of the substrate stage;
The gas radiation plate includes a plurality of gas discharge ports that open to the plasma generation unit, and the gas radiation plate of the gas radiation plate is perpendicular to the surface of the substrate stage. When viewed from the direction, a partition that forms a flow path is provided so as to be connected to all the gas radiation ports formed in the first region that matches the position of the antenna element. All the gas emission ports formed in one region and other gas emission ports formed in other regions are isolated,
The third gas from the third gas supply unit passes through the flow path and radiates from all gas emission ports formed in the first region, whereby the third gas is Supplied through the surface of the antenna element toward the surface of the substrate stage,
The first source gas and the second source gas from the first gas supply unit radiate from the other gas emission port, whereby the first source gas and the second source gas are Supplied through the gap between the antenna elements toward the surface of the substrate stage,
The plasma generation unit is configured to generate plasma using the antenna array in a state where the first source gas, the second source gas, and the third gas are supplied. apparatus. The plasma processing apparatus according to claim 8 , wherein the source gas is a mixed gas of oxygen gas and TEOS gas, and the third gas is an inert gas.

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