KR101076674B1 - Plasma processing apparatus - Google Patents

Abstract

The plasma processing apparatus includes a gas radiating plate having a substrate stage on which a substrate to be processed is disposed, a plasma generating unit for generating plasma by using an antenna array, and a plurality of gas spinnerets provided above the antenna array. A first gas supply unit configured to supply a first source gas to radiate toward a surface of the substrate stage from a portion of the plurality of gas spinnerets of the gas radiating plate, and to pass through the surface of the antenna element; It has a 2nd gas supply part which supplies a 2nd source gas so that it may radiate toward the surface of the said board | substrate stage from the other part of the some gas spinneret of the said gas radiating plate, and will pass through the clearance gap of the said antenna element. When the first source gas is exposed to the antenna element, deposits do not occur or the amount of deposition is less than that of the second source gas. As a result, the film formation speed can be improved, and generation of particles can be suppressed.

Plasma Processing Equipment, Substrate Stage, Antenna Array, Gas Spinneret

Description

PLASMA PROCESSING APPARATUS

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus used for manufacturing semiconductor devices, flat panel displays, solar cells, and the like. Particularly, even when the film formation area is large, the film formation speed is improved and particles are generated. It is related with the plasma processing apparatus which can suppress this.

Today, etching, sputtering, or chemical vapor deposition (CVD) or the like is used to manufacture semiconductor devices, solar cells, or flat panel displays such as liquid crystal display panels or plasma display panels. High processing is performed.

In the manufacture of semiconductor devices, silicon wafers subjected to plasma treatment (plasma treatment), and glass substrates used for flat panel displays are on the increase in size. Correspondingly, the pressure reduction processing chamber (chamber) of the processing apparatus which performs plasma processing is also enlarged, and in the reactive plasma which has a big influence on the formation degree of the film formed in various board | substrates, such as a semiconductor element or a flat panel display, in this pressure reduction processing chamber. The necessity of uniformly generating reactive active species (radicals) or ions and performing a uniform plasma treatment is increasing.

As an apparatus for manufacturing a large-scale thin film solar cell, for example, an ECR (Electron Cyclotron Resonance) plasma CVD apparatus or an ICP (Inductively Coupled Plasma) plasma apparatus can be used.

However, to generate a plasma having a large deposition surface of about 1 m × 1 m, for example, in an ECR plasma CVD apparatus, a magnetic field generating coil used for a cyclotron and a radiation propagation Since the arrangement of the antennas interferes with each other, it is difficult to realize.

Then, in the plasma CVD apparatus, the antenna for generating the plasma which obtains the deposition surface of a large area about 1m * 1m is proposed (patent document 1).

In Patent Document 1, an array in which a plurality of antenna elements made of pillar-shaped conductors whose surfaces are covered with dielectrics are alternately arranged in parallel and in a planar shape with opposite feeding directions. An antenna for plasma generation comprising an antenna is disclosed. By using the plasma generation antenna of Patent Document 1, a plasma having the same spatial distribution of electromagnetic waves can be generated, and a deposition surface having a large area of about 1 m × 1 m can be obtained.

Next, the conventional plasma CVD apparatus provided with the array antenna disclosed in Patent Document 1 will be described.

6 is a diagram showing the configuration of a conventional plasma CVD apparatus.

The conventional plasma CVD apparatus 100 shown in FIG. 6 includes a control unit 102, a distributor 104, an impedance matcher 106, and a rectangular parallelepiped reaction vessel 108. This control part 102 controls each apparatus of the plasma CVD apparatus 100.

An inlet port 110 is formed in the reaction vessel 108, and the film forming gas supply unit 114 is connected to the inlet port 110 through a gas supply pipe 112. For example, in the case of forming a SiO ₂ film, the film forming gas supply unit 114 is an oxygen gas and a TEOS (Tetra-Ethyl-Ortho-Silicate) gas (hereinafter referred to as source gas G). , Called TEOS gas).

Moreover, the exhaust port 116 is formed in the lower wall 108b of the reaction container 108. The vacuum exhaust part 120 which makes the inside of the reaction container 108 a vacuum is connected to this exhaust port 116 via the exhaust pipe 118. In addition, the reaction vessel 108 is provided with a pressure sensor (not shown) for measuring the internal pressure.

In addition, inside the reaction vessel 108, the gas array plate 122, the antenna array 126 composed of the plurality of antenna elements 124, and the substrate stage 128 are sequentially formed from an upper wall 108a side. Is installed. The substrate 130 is placed on the surface 128a of the substrate stage 128 to place another on the object.

In addition, the impedance matching unit 106 is connected to the antenna element 124, and corrects an impedance mismatch caused by a change in the load of the antenna element 124 at the time of plasma generation.

The gas radiating plate 122 diffuses the source gas G introduced from the film forming gas supply part 114 over a large area, and has a size that covers the entire interior of the reaction vessel 108. By this gas radiating plate 122, the inside of the reaction container 108 is partitioned into two spaces. The space on the upper wall 108a side of the gas radiating plate 122 is the gas dispersion chamber 132, and the space on the lower wall 108b side of the gas radiating plate 122 is the reaction chamber 134.

In addition, the gas radiating plate 122 is formed with a plurality of through holes 122a. The gas radiating plate 122 is made of metal and is grounded.

In addition, a heater (not shown) is provided in the substrate stage 128, and the heater is controlled by the control unit 102.

In the conventional plasma CVD apparatus 100, when a SiO ₂ film is formed on the surface 130a of a substrate 130 such as a glass substrate or a silicon wafer, for example, the pressure in the reaction vessel 108 is vacuumed. The base 120 is in a state of about 1 Pa to about 100 Pa, and further, electromagnetic waves are radiated around the antenna element 124 by feeding a high frequency signal to the antenna element 124.

At this time, source gas G is supplied from the film-forming gas supply part 114 to the gas dispersion chamber 132, and this source gas G is flowed in from the through-hole 122a into the reaction chamber 134 by a constant flow velocity. . The source gas G is ionized to generate a plasma having a uniform spatial density. As a result, a SiO ₂ film is formed on the surface 130a of the substrate 130.

As described above, in the conventional plasma CVD apparatus 100, since a uniform plasma can be generated, a SiO ₂ film can be formed on the surface 130a of the substrate 130 even with a large area of about 1 m × 1 m. .

[Patent Document 1] Japanese Patent Laid-Open No. 2003-86581

As described above, the conventional plasma CVD apparatus 100 can form a SiO ₂ film on the surface 130a of the substrate 130 even with a large area. However, a state in which the generated plasma extends even to the antenna element 124, that is, a state in which the antenna element 124 is disposed in the plasma, and the electric field distribution is extremely near the surface 124a of the antenna element 124. As high. For this reason, in the vicinity of the surface 124a of the antenna element 124, the source gas G is excessively decomposed | disassembled by plasma. As a result, for example, in the case of forming a SiO ₂ film on the surface 130a of the substrate 130, the plasma element generates excessive amounts of reaction products such as SiO ₂ and contributes to the film formation. It adheres to the surface 124a of 124 and further accumulates. Thus, reducing the ratio of SiO ₂ to contribute to film formation, there is a problem in that the film formation rate is lowered.

Further, there is also a problem that SiO ₂ (reaction product) deposited on the surface 124a of the antenna element 124 becomes particles, causing an increase in particles in the reaction chamber 134. Due to the increase in particles, the film quality of the formed film may be lowered.

SUMMARY OF THE INVENTION An object of the present invention is to provide a plasma processing apparatus which can solve the problems based on the above-described prior art and improve the film formation speed and suppress the generation of particles even when the film formation area is large.

MEANS TO SOLVE THE PROBLEM In order to achieve the said objective, this invention is the plasma processing apparatus which performs a process to a process target substrate using a 1st source gas and a 2nd source gas, The board | substrate stage in which the said process target substrate is arrange | positioned at the surface, and the said board | substrate Antenna elements provided above the stage and composed of rod-shaped conductors covered with a dielectric surface are arranged with a plurality of predetermined gaps in a plane parallel to the surface of the substrate stage. A gas radiating unit including a plasma generating unit generating a plasma by using an antenna array, a gas radiating plate disposed to cover the plasma generating unit, and having a gas radiating plate having a plurality of gas radiating holes provided above the antenna array; Radiating toward a surface of the substrate stage from a portion of the plurality of gas spinnerets of a spin plate The first gas supply part for supplying the first source gas and the other gas outlets of the gas radiating plate are radiated toward the surface of the substrate stage so as to pass through the surface of the antenna element, so that the gap of the antenna element is formed. Has a second gas supply section for supplying a second source gas so that

The plasma generation unit generates plasma using the antenna array in a state in which the first source gas and the second source gas are supplied to the plasma generation unit.

The first source gas is a gas selected from the group consisting of argon, oxygen gas, hydrogen gas and nitrogen gas.

In this case, the plurality of gas spinnerets of the gas spinneret are formed to be open to the plasma generating unit, and the gas spinneret is viewed from a direction perpendicular to the surface of the substrate stage among the gas spinnerets. In this case, the partition wall which forms a flow path is provided so that it may be connected to all the gas spinnerets formed in the 1st area | region matched with the position of the said antenna element, and by this partition all gas spinnerets formed in the said 1st area | region, and this other than this The other gas spinneret formed in the area | region of this is isolate | separated, and the 1st source gas from the said 1st gas supply part radiates from all the gas spinneret formed in the said 1st area | region through the said flow path, and, thereby, a 1st Source gas is supplied through the surface of the antenna element toward the surface of the substrate stage, and has a second source from the second gas supply portion. Gas, the other gas is emitted from the emission port, and the second source gas by this, it is desirable through a gap in the antenna element, which is supplied toward a surface of the substrate stage.

Alternatively, the plurality of gas spinnerets of the gas spinneret are formed to be opened to the plasma generating unit, and when the gas spinneret is viewed from a direction perpendicular to the surface of the substrate stage, The partition wall which forms a flow path is provided so that it may be connected to all the gas spinnerets formed in the 2nd area | region matched with the area | region of the clearance gap of an antenna element, and this partition wall has all the gas spinnerets formed in the said 2nd area, and this other than this. Another gas spinneret formed in the area is isolated, and the first source gas from the first gas supply unit radiates from the other gas spinneret, whereby the first source gas passes through the surface of the antenna element. And supplied toward the surface of the substrate stage, wherein the second source gas from the second gas supply unit is formed through the flow path. By radiation from all of the gas emission port formed in the second region, and this, the second source gas is preferably equally be through a gap in the antenna elements, supplied toward the surface of the substrate stage.

In addition, it is preferable that the said 1st source gas is oxygen gas, and the said 2nd source gas is TEOS gas.

Furthermore, this invention is the plasma processing apparatus which performs a process to a process target substrate using a 1st source gas and a 2nd source gas, The substrate stage by which the said process target substrate is arrange | positioned at the surface,

A plasma generation unit provided with an antenna array provided above the substrate stage, the antenna element having a rod-like conductor covered with a dielectric surface and arranged with a plurality of predetermined gaps in a plane parallel to the surface of the substrate stage. And a gas radiating part provided to cover the plasma generating part and provided above the antenna array, the gas radiating part including a gas radiating plate having a plurality of gas radiating holes, and a gap between each of the antenna elements of the plasma generating part. And a second gas discharge portion including a plurality of hollow second gas discharge members each having a plurality of holes opened to face the substrate stage, and the first source gas from the gas radiating plate to the substrate stage. The second gas is supplied to the first gas supply unit that supplies the surface and the second source gas. Through the discharge portion, with a second gas supply for supplying toward the surface of the substrate stage,

The plasma generating unit generates plasma using the antenna array while the first source gas and the second source gas are supplied, and the first source gas is argon, oxygen gas, hydrogen gas, and nitrogen gas. It provides a plasma processing apparatus, characterized in that the gas selected from the group of.

In addition, it is preferable that the said 1st source gas is oxygen gas, and the said 2nd source gas is TEOS gas.

Furthermore, this invention is a plasma processing apparatus which processes a process target substrate using source gas, The substrate stage in which the said process target substrate is arrange | positioned at the surface, and is provided above the said substrate stage, and the surface was covered with the dielectric material. An antenna element composed of a rod-shaped conductor is provided so as to cover the plasma generating portion and the plasma generating portion for generating plasma using an antenna array formed with a plurality of predetermined gaps arranged in a plane parallel to the surface of the substrate stage. And a gas radiating unit having a gas radiating plate disposed above the antenna array, and emitting the first source gas and the second source gas from the gas radiating unit toward the surface of the substrate stage. A first gas supply unit supplying the second source gas and the gas spinning From the third gas supply unit it has to feed towards the first and the third gas, to emit a third gas to the surface of the substrate stage,

The gas spinneret includes a plurality of gas spinnerets opened to the plasma generating unit, and among the gas spinnerets of the gas spinneret, the gas spinneret is viewed from a direction perpendicular to the surface of the substrate stage. In this case, the partition wall which forms a flow path is provided so that it may be connected to all the gas spinnerets formed in the 1st area | region matched with the position of the said antenna element, and by this partition all gas spinnerets formed in the said 1st area | region, and this other than this The other gas spinneret formed in the area | region of this is isolate | separated, and the said 3rd gas from the said 3rd gas supply part radiates from all the gas spinneret formed in the said 1st area | region through the said flow path, and thereby, the 3rd Gas is supplied to the surface of the substrate stage through the surface of the antenna element, the first from the first gas supply The source gas and the second source gas radiate from the other gas spinneret, whereby the first source gas and the second source gas pass to the surface of the substrate stage through a gap between the antenna elements. The plasma generating unit is configured to generate a plasma using the antenna array while the first source gas, the second source gas, and the third gas are supplied. To provide.

In addition, it is preferable that the said source gas is a mixed gas of oxygen gas and TEOS gas, and the said 3rd gas is an inert gas.

Effect of the Invention

According to the plasma processing apparatus of the present invention, the first source gas is supplied to the surface of the substrate stage through the surface of the antenna element, and the second source gas is supplied to the surface of the substrate stage through the gap of the antenna element. Since the reaction product is generated by the first source gas and the second source gas by generating the plasma using the antenna array in the state of being present, since the first source gas is supplied around the antenna element, Attachment or deposition of reaction products to the antenna element is suppressed. Moreover, even if the 2nd source gas contains the component which is easy to adhere | attach with respect to an antenna element, since 1st source gas is supplied around the antenna element, attachment is suppressed. For this reason, generation | occurrence | production of a particle is suppressed.

Further, since the adhesion or deposition of the reaction product on the antenna element is suppressed, the utilization efficiency of the first source gas and the second source gas is increased, and the film formation speed is improved. From this, even when the film formation area is large, the film formation speed can be improved and the generation of particles can be suppressed.

Further, according to the plasma processing apparatus of the present invention, a third gas different from the source gas is supplied to the surface of the substrate stage through the surface of the antenna element, and the raw material is directed toward the surface of the substrate stage through the gap between the antenna elements. By generating the plasma using the antenna array while the gas is being supplied, since the third gas is supplied around the antenna element, deposition or deposition of reaction products on the antenna element is suppressed. For this reason, generation | occurrence | production of a particle is suppressed. Further, since the adhesion or deposition of the reaction product on the antenna element is suppressed, the utilization efficiency of the source gas is increased, and the film formation speed is improved. From this, even when the film formation area is large, the film formation speed can be improved and the generation of particles can be suppressed.

BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows the structure of the plasma CVD apparatus which concerns on the 1st Embodiment of the plasma processing apparatus of this invention.

2 is a schematic plan view showing an antenna array of the plasma CVD apparatus of this embodiment.

3 is a diagram illustrating a configuration of a plasma CVD apparatus according to a second embodiment of the plasma processing apparatus of the present invention.

4 is a diagram illustrating a configuration of a plasma CVD apparatus according to a third embodiment of the plasma processing apparatus of the present invention.

FIG. 5A is a schematic perspective view showing an example of the second source gas discharge portion of the plasma CVD apparatus according to the third embodiment of the plasma processing apparatus of the present invention, and FIG. It is typical sectional drawing of the 2nd source gas discharge | release part of the 2nd source gas discharge | release part shown to (c), Another example of the 2nd source gas discharge | release member of the 2nd source gas discharge | release part shown to (a) of FIG. It is typical sectional drawing shown.

Fig. 6 is a diagram showing the configuration of a conventional plasma CVD apparatus.

<Explanation of symbols for the main parts of the drawings>

10, 50, 60, 100: plasma CVD apparatus (CVD apparatus)

12 control unit 14 divider

16: impedance matcher 18: reaction vessel

22: inlet port 23: gas supply pipe

24 exhaust port 25 exhaust pipe

26: first gas supply part 27: vacuum exhaust part

28: second gas supply part 40, 52, 62: gas radiating part

30 antenna array 32 antenna element

33: gap 34: substrate stage

36 substrate 38 gas dispersion chamber

39: reaction chamber 70: second source gas discharge portion

EMBODIMENT OF THE INVENTION Below, the plasma processing apparatus of this invention is demonstrated in detail based on the family register embodiment shown to an accompanying drawing.

BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows the structure of the plasma CVD apparatus which concerns on the 1st Embodiment of the plasma processing apparatus of this invention.

The plasma CVD apparatus 10 (hereinafter, referred to as the CVD apparatus 10) shown in FIG. 1 of the present embodiment uses oxygen gas (Gf) as the first source gas (active species gas), and the second source material. A description will be given by using an example of forming an SiO ₂ film on the surface 36a of a substrate (processing substrate 36), such as a glass substrate or a silicon wafer, using TEOS gas (Gs) as the gas. In the plasma processing apparatus of the present invention, the film formed on the substrate 36 is not limited to the SiO ₂ film.

The CVD apparatus 10 shown in FIG. 1 includes a control unit 12, a distributor 14, an impedance matcher 16, and a rectangular parallelepiped reaction vessel 18. This control part 12 controls each apparatus of the CVD apparatus 10 as mentioned later. The reaction vessel 18 is made of metal or alloy and is grounded.

An introduction port 22 is formed in the upper wall 18a of the reaction vessel 18. The gas supply pipe 23 is connected to this introduction port 22. Furthermore, the second gas supply part 28 is connected to the gas supply pipe 23.

This 2nd gas supply part 28 supplies TEOS gas (Gs, 2nd source gas) in reaction container 18, for example. The second gas supply 28 is, for example, a tank filled with TEOS of liquid (not shown), a vaporizer (not shown) for vaporizing TEOS of liquid, and a flow rate for adjusting the flow rate of vaporized TEOS. It is provided with an adjustment part (not shown). In the second gas supply unit 28, the TEOS of the liquid is vaporized by the vaporization unit to obtain TEOS gas (Gs, the second source gas), and the flow rate of the TEOS gas (Gs) is adjusted by the flow rate adjusting unit so that the TEOS gas (Gs) is supplied into the reaction vessel 18.

In addition, an exhaust port 24 is formed in the lower wall 18b of the reaction vessel 18. The exhaust pipe 25 is connected to this exhaust port 24. Furthermore, the vacuum exhaust part 27 is connected to the exhaust pipe 25. This vacuum exhaust part 27 has a vacuum pump, such as a dry pump and a turbo molecular pump. In addition, the pressure vessel (not shown) which measures the internal pressure is provided in the reaction container 18.

Moreover, inside the reaction container 18, the board | substrate 36 mounted on the surface 34a of the board | substrate stage 34 and the board | substrate stage 34 is provided in order from the lower wall 18b side, and this board | substrate stage ( Above the 34, an antenna array (plasma generating unit) 30 comprising a plurality of antenna elements 32 is provided, and further, the gas array is provided so that the antenna array 30 is covered above the antenna array 30. The sand portion 40 (gas radiating plate 42) is provided.

Here, FIG. 2 is a schematic plan view which shows the antenna array of the plasma CVD apparatus of this embodiment.

As shown in FIG. 2, the antenna array 30 includes a plurality of antenna elements 32 parallel to each other with respect to a plane (not shown) that is substantially parallel to the surface 34a of the substrate stage 34. A plurality of predetermined gaps (33) are provided and arranged. This antenna array 30 is provided below the gas radiating part 40 (lower wall 18b side). In addition, the antenna element 32 is provided with a predetermined gap 33 for each of the side walls 18c and 18d. In this invention, the clearance 33 between the antenna element 32 and each side wall 18c, 18d is also handled similarly to the clearance 33 of each antenna element 32. As shown in FIG.

Moreover, in the antenna array 30, each antenna element 32 is arrange | positioned over two side wall 18c and side wall 18d which oppose the reaction container 18. As shown in FIG. The antenna array 30 (each antenna element 32) is provided with a gas radiating plate 42 (see FIG. 1) of the gas radiating unit 40 (see FIG. 1) and the surface 34a (FIG. 1) of the substrate stage 34. It is installed in parallel with reference.

The antenna element 32 is a monopole antenna and is electrically insulated from and mounted in openings (not shown) formed in the side walls 18e and 18f of the reaction vessel 18.

In the antenna array 30, as shown in FIG. 2, it protrudes from the side wall 18e, 18f in the reaction container 18 in the opposite direction to the adjacent antenna element 32, and the feeding direction is reversed. . These antenna elements 32 are connected to the impedance matcher 16 on the side of the high frequency current supply terminal. This impedance matcher 16 is a matching box.

The impedance matcher 16 corrects the impedance mismatch caused by the change in the load of the antenna element 32 during plasma generation by using the frequency matching of the high frequency signal generated by the high frequency power supply of the control unit 12. It is used to.

Each antenna element 32 forms a rod (which may be a pipe) made of a conductor having high electrical conductivity, and has a length of (2n + 1) / 4 times (n is 0 or a positive integer) of the high frequency wavelength used. Is the radiation length of the antenna element which is a monopole antenna.

Each antenna element 32 is housed in a cylindrical member 37 made of a dielectric such as quartz, and the surface of each antenna element 32 is covered with a dielectric such as quartz. In this way, by covering the rod-shaped conductor with a dielectric, the capacitance and inductance as the antenna element 32 are adjusted. Thereby, the high frequency current can be efficiently propagated along the longitudinal direction of the antenna element 32, and the electromagnetic waves can be radiated efficiently. In addition, the surface of the antenna element 32 refers to the surface 37a of the cylindrical member 37 instead of the surface of a rod-shaped conductor.

In the present embodiment, the impedance matching device 16 is provided, and as will be described later, the metal film formed on the gas radiating portion 40 (gas radiating plate 42) is grounded, thereby causing a slight wound. It acts with the electromagnetic waves formed in a relation, and forms a predetermined electromagnetic wave for each antenna element 32. Furthermore, since the power supply direction of the antenna element 32 which comprises the antenna array 30 is opposite to the adjacent antenna element 32, electromagnetic waves are formed uniformly in the reaction chamber 39. As shown in FIG.

As shown in FIG. 1, in the substrate stage 34, the substrate 36 is placed on the surface 34a as described above. In this substrate stage 34, the substrate 36 is placed so that the center of the substrate stage 34 coincides with the center of the substrate 36.

In addition, inside the substrate stage 34, a heating element (not shown) for heating the substrate 36 is provided, and a grounded electrode plate (not shown) is provided. This heating element is connected to the control part 12, and heating by the heating element is controlled by the control part 12. As shown in FIG.

In addition, the electrode plate may be connected to a bias power supply (not shown) so that a predetermined bias voltage is applied to the electrode plate by the bias power supply.

In addition, as shown in FIG. 1, the gas radiating part 40 is formed in the gas radiating plate 42 which consists of SiC, for example, with two or more through-holes about 0.3-1.0 mm in diameter. These through holes are the gas spinneret 44. In the gas radiating section 40, a metal film is formed on the surface of the gas radiating plate 42 and grounded.

In the present embodiment, the gas radiating plate 42 of the gas radiating unit 40 has a size that spans the entire inside of the reaction vessel 18 and is provided to cover the antenna array 30. By this gas radiating part 40, the inside of the reaction container 18 is partitioned into two spaces, and the space on the side of the upper wall 18a of the gas radiating part 40 is the gas dispersion chamber 38, and the gas radiating part The space on the lower wall 18b side of the 40 is the reaction chamber 39.

The gas radiating unit 40 diffuses the gas supplied to the gas dispersion chamber 38 into the reaction chamber 39 over a large area. In the present embodiment, the gas radiating unit 40 diffuses the TEOS gas Gs introduced from the second gas supply unit 28 into the reaction chamber 39 over a large area.

Furthermore, in the gas radiating part 40, when the gas radiating plate 42 is seen from the direction perpendicular | vertical to the surface 34a of the board | substrate stage 34, the antenna of the antenna array 30 provided below. Each gas spinneret 44 formed in the first region 42a that matches the position of the element 32 and the region that does not match the position of the antenna element 32, that is, the antenna element 32 and the antenna element ( 2nd area | region 42b which matches with the area | region of 32 (gap 33), and 2nd area | region matching between the antenna element 32 and the wall surface of the reaction container 18 (gap 33). The flow path 46 is formed by the partition wall for isolating each gas spinneret 44 of the area | region 42b.

The flow paths 46 are connected (communicated) to all the gas radiating openings 44 formed in the first region 42a that are matched with the antenna element 32, and all the gas chambers are communicated through the flow paths 46. Oxygen gas Gf (1st source gas) can be supplied to the sand dune 44, for example.

The flow path 46 is formed by having a U-shaped partition wall member having a cross-sectional shape formed on the surface of the gas radiating plate 42 along the direction in which the antenna element 32 extends. The first gas supply part 26 is connected to the flow passage 46.

The 1st gas supply part 26 is equipped with a gas cylinder (not shown) and a flow volume adjusting part (not shown), for example, and this gas cylinder is filled with oxygen gas Gf. The first gas supply section 26 allows the oxygen element Gf to flow from the gas radiating port 44 through the flow passage 46 to the entire antenna in the longitudinal direction of the antenna element 32. It is supplied to the circumference | surroundings of the surface 37a of this, and is further supplied into the reaction chamber 39. FIG.

In addition, the gas spinneret 44 in the second region 42b that does not match the position of the antenna element 32 communicates with the gas dispersion chamber 38 and the reaction chamber 39, and the gas dispersion chamber 38 ) TEOS gas (Gs) is supplied to the reaction chamber (39).

Thus, in the gas radiating part 40, the thing formed in the 1st area | region 42a among the some gas spinneret 44 by the flow path 46 is another formed in the 2nd area | region 42b. It is isolated from the gas spinneret 44. For this reason, TEOS gas Gs supplied from the 2nd gas supply part 28 is not discharge | released from the gas spinneret 44 formed in the 1st area | region 42a. For this reason, oxygen gas Gf supplied through the flow path 46 is supplied to the circumference | surroundings of the surface 37a of the antenna element 32. FIG. Therefore, oxygen gas Gf is supplied by the gas radiating part 40 to the periphery of the surface 37a of the antenna element 32, without supplying TEOS gas Gs.

In addition, the gas supplied from the first gas supply unit 26 via the flow passage 46 is not limited to oxygen gas, but adheres to the surface 37a of the antenna element 32 among the gases supplied for film formation. Or it may be a thing which does not accumulate, or the thing which attaches or deposits is small.

As mentioned above, the gas radiating part 40 of this embodiment isolate | separates the supply path of oxygen gas Gf, and does not isolate the supply path of TEOS gas Gs.

The control part 12 has a high frequency power supply (not shown) which consists of a high frequency oscillation circuit and an amplifier, and a current and voltage sensor (not shown), and according to the detection signal of a current and voltage sensor, The change and adjustment of the impedance matcher 16 are performed. The control unit 12 controls the frequency of the high frequency signal common to the antenna elements 32 to bring all the antenna elements 32 into a state where impedance is matched, and then is connected to each antenna element 32. The impedance matcher 16 adjusts the impedance of each antenna element 32 individually. The control unit 12 and the plurality of impedance matchers 16 are connected via a divider 14. The control unit 12 also controls the power feeding of the high frequency signal to the antenna element 32.

In addition, the control unit 12 also controls the first gas supply unit 26, the second gas supply unit 28, and the vacuum exhaust unit 27.

The control unit 12 controls the supply timing of the oxygen gas Gf (first source gas), the flow rate, and the like in the first gas supply unit 26. The control unit 12 also controls the supply timing of the TEOS gas Gs and the flow rate of the second gas supply unit 28. Furthermore, the control part 12 can exhaust the raw material gas etc. in the reaction container 18, and can further adjust the pressure in the reaction container 18 to desired pressure.

In the present embodiment, for example, when the SiO ₂ film is formed, the TEOS gas (Gs) introduced from the second gas supply unit 28 causes the inside of the reaction vessel 18 from the upper wall 18a side to the lower wall 18b. Side (hereinafter, the direction from the upper wall 18a side to the lower wall 18b side is referred to as a "vertical direction") and discharged from the exhaust port 24. In addition, as will be described later, this TEOS gas (Gs) is activated in the reaction vessel (18) in the process up to discharge, and further mixed with the oxygen gas (Gf), which is excited and becomes a reactive active species, It becomes mixed gas.

In this embodiment, the control part 12 makes the pressure in the reaction container 18 into the state of 1 Pa-about 100 Pa by the vacuum exhaust part 27, and the oxygen gas Gf through the flow path 46. FIG. (1st source gas) is supplied through the periphery of the surface 37a of the antenna element 32, and TEOS gas Gs is supplied from the gas spinneret 44 of the gas radiating plate 42. As shown in FIG. Further, by feeding a high frequency signal to the antenna element 32, electromagnetic waves are radiated around the antenna element 32. As a result, plasma (not shown) is generated in the vicinity of the antenna element 32 in the reaction vessel 18, and oxygen gas Gf (active species gas) radiated from the gas radiator 40 is generated. It is excited to obtain an oxygen radical (reactive active species). At that time, since the generated plasma has conductivity, electromagnetic waves emitted from the antenna element 32 are easily reflected by the plasma. For this reason, electromagnetic waves are localized in the local area around the antenna element 32. In this manner, in the antenna array 30 having a plurality of antenna elements 32 made of a monopole antenna, plasma is localized in the vicinity of the surface 37a of the antenna element 32 to form the surface of the antenna element 32. The electric field distribution becomes extremely high around 37a.

In addition, a detailed description of the principle of plasma generation using such an antenna array is described in Japanese Laid-Open Patent Publication No. 2003-86581, which is a prior application filed by the present applicant. In addition, a detailed impedance matching method for each antenna in the plasma generating apparatus using the antenna array is described in the specification of Japanese Patent Application No. 2005-014256, which is similarly filed by the applicant of the present application. As a detailed impedance matching method for each antenna array and each antenna in the present invention, for example, the method described in each specification may be used.

Next, a description is given of a film formation method of CVD apparatus 10 of the present embodiment will be described with SiO ₂ film as an example.

First, oxygen gas Gf (active species gas) flows into the flow passage 46 from the first gas supply unit 26 at a constant flow rate, and enters the first region 42a that matches the arrangement position of the antenna element 32. Oxygen gas Gf is supplied from the formed gas spinneret 44 to the circumference | surroundings of the surface 37a of the antenna element 32, and oxygen gas Gf flows into the reaction chamber 39 at a constant flow velocity. At this time, the TEOS gas Gs is discharged to the gas dispersion chamber 38 at a constant flow rate from the second gas supply unit 28 through the gas supply pipe 23, and the flow path 46 of the gas radiating unit 40 is installed. It does not, but flows into the reaction chamber 39 from the gas spinneret 44 formed in the 2nd area | region 42b which communicates with the gas dispersion chamber 38 at a constant flow velocity.

In addition, when supplying oxygen gas Gf and TEOS gas Gs, the reaction container 18 (reaction chamber 39) is exhausted by the vacuum exhaust part 27, and by the control part 12, The reaction vessel 18 (reaction chamber 39) is held at a pressure of about 1 Pa to about 100 Pa, for example. As a result, the oxygen gas Gf and the TEOS gas Gs flow in the vertical direction of the reaction vessel 18 (reaction chamber 39).

Next, a high frequency signal is fed to the antenna element 32 to radiate electromagnetic waves around the antenna element 32. As a result, in the reaction chamber 39, a localized plasma is generated in the vicinity of the antenna element 32, and oxygen gas Gf (active species gas) radiated from the gas spinneret 44 is dissociated ( Dissolved oxygen radicals (reactive active species) are obtained. In addition, TEOS radicals (activated TEOS gas) from which the TEOS gas is dissociated are obtained.

In the vicinity of the antenna element 32 of the antenna array 30, oxygen radicals (reactive active species) and TEOS radicals are mixed into a mixed gas. When the oxygen radical (reactive active species) and the TEOS radical in the active state are mixed, an SiO ₂ film is formed on the surface 36a of the substrate 36 by the active energy in the active state.

In this embodiment, the flow path 46 is formed in the gas radiating part 40, and only oxygen gas Gf (1st source gas) is supplied to the surface 37a of the antenna element 32, and TEOS gas ( Gs passes through the gap 33 (between) of the antenna elements 32 and is supplied to the reaction chamber 39. Thus, since only oxygen gas Gf is supplied to the surface 37a of the antenna element 32, even when plasma is generated using the antenna array 30, the surface 37a of the antenna element 32 is used. Only oxygen gas Gf exists. As a result, adhesion or deposition of a reaction product such as SiO ₂ on the surface 37a of the antenna element 32 is suppressed. In this way, adhesion or deposition of reaction products, such as SiO ₂ , on the surface 37a of the antenna element 32 is suppressed, so that generation of particles is suppressed. Furthermore is obtained that excellent film quality with regard to the generation of particles because the suppression, the film forming (SiO ₂ film).

Furthermore, in this embodiment, the antenna element 32 of, since the surface (37a) to the SiO _2, etc. attached to the inhibition of the reaction product, SiO oxygen gas (Gf) and the TEOS gas is used in the _second film formation (Gs ) Ratio (use efficiency) increases, so that the film formation speed is also improved.

In addition, even when the substrate 36 is large, for example, about 1 m × 1 m, the antenna array 30 can generate a uniform plasma, and the generation of particles is suppressed as described above. Since the film formation speed is high, the SiO ₂ film having excellent film quality can be formed earlier than before.

In addition, in this embodiment, a source gas supply part (not shown) is provided instead of the 2nd gas supply part 28, and the 3rd gas supply part (not shown) is substituted for the 1st gas supply part 26. As shown in FIG. ) May also be installed.

In this case, the source gas supply part is for supplying the source gas necessary for obtaining the film | membrane formed in the surface 36a of the board | substrate 36 in the reaction container 18. FIG. For example, in the case of forming a SiO ₂ film on the surface 36a of the substrate 36, as a source gas, a mixed gas of oxygen gas (first source gas) and TEOS gas (second source gas) is supplied. .

The source gas supply unit includes as many gas cylinders (not shown) as the type and number of gases according to the film to be formed, and a flow rate adjusting unit (not shown) for adjusting the flow rate of the gas from the gas cylinder. It is. In this embodiment, the gas cylinder is filled with oxygen gas (first source gas).

In addition, the source gas supply part is a tank (not shown) filled with a liquid, a vaporization part (not shown) for vaporizing the liquid, and a flow rate of gas vaporized by the vaporization part in order to supply TEOS gas (Gs). It is provided with a flow rate adjusting unit (not shown) for adjusting the. In this embodiment, the tank is filled with liquid TEOS, vaporized by the vaporization unit to obtain TEOS gas Gs (second source gas), and the flow rate adjusting unit adjusts the flow rate of TEOS gas Gs. do.

In this embodiment, the source gas in which oxygen gas (1st source gas) and TEOS gas (2nd source gas) are mixed is supplied from the source gas supply part to the gas dispersion chamber 38.

The third gas supply unit is for supplying a gas (third gas) that is not used for film formation other than the source gas, for example, other than the oxygen gas Gf and the TEOS gas Gs. This 3rd gas supply part is equipped with a gas cylinder (not shown) and a flow volume adjusting part (not shown), for example, The gas cylinder is filled with the gas which is not used for film-forming. In this embodiment, as a gas to be filled, it is inert gas, such as argon gas and nitrogen gas, for example.

In such a structure, the source gas supplied from the source gas supply part is reacted with the gap 33 between the antenna element 32 and the gap 33 between the antenna element 32 and the wall surface of the reaction container 18. (39) Inlet at a constant flow rate. Further, a gas (third gas) which is not used for film formation from the gas radiating port 44 formed in the first region 42a matching with the arrangement position of the antenna element 32 is received from the third gas supply unit. 32 is supplied around the surface 37a to diffuse into the reaction chamber 39. In this way, the antenna array (with the source gas (mixed gas of oxygen gas (first source gas) and TEOS gas (second source gas)) and gas (third gas) supplied into the reaction chamber 39. 30) to generate a plasma. As a result, oxygen radicals are obtained, the TEOS gas is activated, and a SiO ₂ film is formed on the surface 36a of the substrate 36.

In this case, gas is supplied to the circumference | surroundings of the surface 37a of the antenna element 32, and the circumference | surroundings of the surface 37a of the antenna element 32 are isolate | separated from source gas, and the surface of the antenna element 32 is The source gas is not supplied to the surroundings of 37a. For this reason, adhering or depositing of source gas to the surface 37a of the antenna element 32 is suppressed. Thereby, generation | occurrence | production of a particle is suppressed and also the film-forming speed can also be improved.

Thus, a structure in which a source gas supply unit (not shown) is provided in place of the second gas supply unit 28, and a third gas supply unit (not shown) is also provided in place of the first gas supply unit 26. Also in this case, the same effects as in the first embodiment can be obtained in that a film having excellent film quality can be formed at a fast film forming speed.

Next, a second embodiment of the present invention will be described.

3 is a diagram illustrating a configuration of a plasma CVD apparatus according to a second embodiment of the plasma processing apparatus of the present invention.

In addition, in this embodiment, the same code | symbol is attached | subjected to the same structure as the plasma CVD apparatus of 1st Embodiment shown in FIG. 1 and FIG. 2, and the detailed description is abbreviate | omitted.

As shown in FIG. 3, the plasma CVD apparatus 50 of this embodiment has the 1st gas supply part 26 and the 2nd gas supply part compared with the plasma CVD apparatus 10 (refer FIG. 1) of 1st Embodiment. The arrangement position of the 28 and the structure of the gas radiating part 52 are different, and the structure other than that is the same structure as the plasma CVD apparatus 10 of 1st Embodiment, and the detailed description is abbreviate | omitted.

In the plasma CVD apparatus 50 of this embodiment, the 1st gas supply part 26 is connected to the reaction container 18 via the gas supply pipe 23. Oxygen gas Gf is supplied from the first gas supply part 26 to the gas dispersion chamber 38.

In addition, the gas radiating part 52 of this embodiment does not isolate the supply path of oxygen gas Gf, as opposed to the gas radiating part 40 (refer FIG. 1) of 1st Embodiment, and TEOS gas Gs. To isolate the supply path.

The gas radiating part 52 of this embodiment is basically the same structure as the gas radiating part 40 (refer FIG. 1) of 1st Embodiment, and the gas radiating plate 54 which consists of SiC, for example. In this case, a plurality of through holes having a diameter of about 0.5 mm are formed. These through holes are the gas spinneret 56. The gas radiating unit 52 also has a metal film formed on the surface of the gas radiating plate 54 and is grounded.

The gas radiating part 52 diffuses the oxygen gas Gf introduced from the 1st gas supply part 26 over a large area.

In addition, in this embodiment, the gas radiating plate 54 of the gas radiating part 52 also has the magnitude | size which covers the whole inside of the reaction container 18, and is provided so that the antenna array 30 may be covered. By this gas radiating part 52, the inside of the reaction container 18 is partitioned into two spaces. In the reaction vessel 18, the space on the side of the upper wall 18a of the gas radiator 52 is the gas dispersion chamber 38, and the space on the side of the lower wall 18b of the gas radiator 52 is the reaction chamber 39. )to be.

Further, in the gas radiating unit 52, when the gas radiating plate 54 is viewed from the direction perpendicular to the surface 34a of the substrate stage 34, the antenna element 32 and the antenna element (provided below) The second region 54b matching with the gap 32 (the gap 33), and the second region matching the gap between the antenna element 32 and the wall surface of the reaction vessel 18 (the gap 33) The direction in which the antenna element 32 extends so as to isolate each gas spinneret 56 formed at 54b from the gas spinneret 56 formed at the first region 54a that matches the position of the antenna element 32. The flow path 58 is formed in the surface of the gas radiating plate 54 by the partition.

The flow path 58 has a second region 54b that matches the gap between the antenna element 32 and the antenna element 32 (the gap 33), and each sidewall of the antenna element 32 and the reaction vessel 18. All gas chambers are connected (communicated) to all the gas spinnerets 56 formed in the second region 54b that mate with the gaps 18c and 18d (the gaps 33). For example, TEOS gas Gs can be supplied to the sand dunes 56.

The flow path 58 is formed by forming a cross section of a U-shaped partition wall member on the surface of the gas radiating plate 54 along the direction in which the antenna element 32 extends. The second gas supply part 28 is connected to the flow path 58.

The second gas supply unit 28 allows the TEOS gas Gs from the gas spinneret 56 to the entire lengthwise direction of the antenna element 32 through the flow path 58 between the antenna elements 32. The gap 33 is supplied into the reaction chamber 39 from the gap 33 between the antenna element 32 and the side walls 18c and 18d of the reaction vessel 18.

In the gas radiating part 52, the agent which matches with the arrangement position of the antenna element 32 regarding the thing formed in the 2nd area | region 54b among the some gas radiating opening 56 by the flow path 58 is made. It is isolated from the other gas spinneret 56 formed in one area | region 54a. For this reason, TEOS gas Gs supplied from the 2nd gas supply part 28 is radiated | emitted from the gas spinneret 56 formed in the 2nd area | region 54b through the flow path 58. As shown in FIG. That is, TEOS gas Gs flows into the reaction chamber 39 from the gap 33 of the antenna element 32 at a constant flow rate.

On the other hand, in the circumference | surroundings of the surface 37a of the antenna element 32, from the gas spinneret 56 formed in the 1st area | region 54a through the gas dispersion chamber 38 from the 1st gas supply part 26, oxygen The gas Gf flows into the reaction chamber 39 at a constant flow rate.

In this manner, the gas radiating unit 52 supplies the oxygen gas Gf to the periphery of the surface 37a of the antenna element 32 without supplying the TEOS gas Gs.

In this way, the plasma is generated using the antenna array 30 while the oxygen gas Gf and the TEOS gas are supplied into the reaction chamber 39. As a result, oxygen radicals are obtained, the TEOS gas is activated, and a SiO ₂ film is formed on the surface 36a of the substrate 36.

In the plasma CVD apparatus 50 of the present embodiment, the gap 33 between the antenna elements 32 and the wall surface of the antenna element 32 and the reaction vessel 18 through the flow path 58. ) TEOS gas (Gs) is supplied. On the other hand, oxygen gas Gf is supplied from the gas radiating plate 54 to the circumference | surroundings of the surface 37a of the antenna element 32, and the TEOS gas (Gs) circumference | surroundings of the surface 37a of the antenna element 32 is carried out. ). For this reason, attachment or deposition on the surface 37a of the antenna element 32 is suppressed. Thereby, generation | occurrence | production of a particle is suppressed and also the film-forming speed can also be improved. For this reason, the film | membrane excellent in film quality can be formed at a fast film-forming speed.

In addition, since the uniform plasma can be generated by the antenna array 30, even if the substrate is large, for example, about 1 m × 1 m, for example, an SiO ₂ film or the like has excellent film quality. Also, it can be formed at a high film formation speed.

In addition, in the plasma CVD apparatus 50 of this embodiment, since oxygen gas Gf is supplied to the gas radiating part 52, a part of gas component does not accumulate in the gas radiating opening 56. FIG. For this reason, generation | occurrence | production of a particle is suppressed and the maintenance of the gas radiating part 52 can also be simplified.

Furthermore, also in the film-forming method by the plasma CVD apparatus 50 of this embodiment, TEOS gas Gs is isolate | separated from the circumference | surroundings of the surface 37a of the antenna element 32, and TEOS gas Gs is supplied, Therefore, attachment to the surface 37a of the antenna element 32 is suppressed, and the same effect as in the first embodiment can be obtained.

In addition, also in this embodiment, a 3rd gas supply part (not shown) is provided instead of the 1st gas supply part 26 like the 1st embodiment, and it replaces the 2nd gas supply part 28, It is good also as a structure which provides a source gas supply part (not shown). In this case, the structures of the source gas supply unit and the third gas supply unit are the same as in the first embodiment.

In such a structure, it is located in the clearance 33 between the antenna element 32 and the clearance 33 between the antenna element 32 and the wall surface of the reaction container 18 via the flow path 58 from the source gas supply part. The source gas is introduced into the reaction chamber 39 from the gas spinneret 56 at a constant flow rate. Moreover, the gas (third gas) which is not used for film-forming from the gas spinneret 54 matching with the arrangement | positioning position of the antenna element 32 from the 3rd gas supply part is moved to the whole region of the longitudinal direction of the antenna element 32. It supplies over the surface 37a of the antenna element 32, and diffuses into the reaction chamber 39. As shown in FIG. In this way, the antenna array (with the source gas (mixed gas of oxygen gas (first source gas) and TEOS gas (second source gas)) and gas (third gas) supplied into the reaction chamber 39. 30) to generate a plasma. As a result, oxygen radicals are obtained, the TEOS gas is activated, and a SiO ₂ film is formed on the surface 36a of the substrate 36.

In this case, gas is supplied to the circumference | surroundings of the surface 37a of the antenna element 32, and the circumference | surroundings of the surface 37a of the antenna element 32 are isolate | separated from source gas, and the surface of the antenna element 32 is The source gas is not supplied to the surroundings of 37a. For this reason, adhering or depositing of source gas to the surface 37a of the antenna element 32 is suppressed. Thereby, generation | occurrence | production of a particle is suppressed and also the film-forming speed can also be improved.

Thus, a structure in which a source gas supply unit (not shown) is provided in place of the second gas supply unit 28, and a third gas supply unit (not shown) is provided in place of the first gas supply unit 26. Also in this case, the same effects as in the first embodiment can be obtained in that a film having excellent film quality can be formed at a fast film forming speed.

Next, a third embodiment of the present invention will be described.

4 is a diagram illustrating a configuration of a plasma CVD apparatus according to a third embodiment of the plasma processing apparatus of the present invention. FIG. 5A is a schematic perspective view showing an example of the second source gas discharge portion of the plasma CVD apparatus according to the third embodiment of the plasma processing apparatus of the present invention, and FIG. It is typical sectional drawing of the 2nd source gas discharge | release part of the 2nd source gas discharge | release part shown to (c), Another example of the 2nd source gas discharge | release member of the 2nd source gas discharge | release part shown to (a) of FIG. It is typical sectional drawing shown.

In addition, in this embodiment, the same code | symbol is attached | subjected to the structure same as the plasma CVD apparatus of 1st Embodiment shown in FIG. 1 and FIG. 2, and the detailed description is abbreviate | omitted.

As shown in FIG. 4, the plasma CVD apparatus 60 of this embodiment is compared with the plasma CVD apparatus 10 (refer FIG. 1) of 1st Embodiment, compared with the 1st gas supply part 26 and the 2nd. The arrangement position of the gas supply part 28 and the structure of the gas radiating part 62 differ, and also the point which the 2nd source gas discharge part 70 is provided differs, and the structure of that other than that of 1st Embodiment is different. It is the same structure as the plasma CVD apparatus 10, and the detailed description is abbreviate | omitted.

In the plasma CVD apparatus 60 of this embodiment, the 1st gas supply part 26 is connected to the reaction container 18 via the gas supply pipe 23. Oxygen gas Gf is supplied from the first gas supply part 26 to the gas dispersion chamber 38.

In addition, the gas radiating part 62 of this embodiment differs from the gas radiating part 40 (refer FIG. 1) of 1st Embodiment in that the flow path 46 is not formed, and the structure of that other than that is It is the same structure as the gas radiating part 40 (refer FIG. 1) of 1st Embodiment.

Also in this embodiment, the inside of the reaction container 18 is partitioned into two spaces by the gas radiator 62, and the space on the upper wall 18a side of the gas radiator 62 is the gas dispersion chamber 38. The space on the lower wall 18b side of the gas radiator 52 is the reaction chamber 39. In addition, the gas radiating part 62 of this embodiment also receives the oxygen gas Gf (first source gas) introduced from the first gas supply part 26 into the gas dispersion chamber 38 over a large area. 39).

The second source gas discharge part 70 of the present embodiment is configured to be a TEOS from a gas spinneret located in the gap 33 of the antenna array 30 in the middle of the flow of the oxygen gas Gf (first source gas). The gas Gs (second source gas) is discharged into the reaction chamber 39.

As shown to Fig.5 (a), this 2nd source gas discharge part 70 has the 2nd source gas discharge member 72, connection pipe | tubes 74a and 74b, and the connection pipe 76, It is provided below the gas radiating part 62.

The second source gas discharge member 72 is formed of a tubular member whose both ends are bent, and the second source gas discharge member 72 is formed on a circumferential surface opposite to the side bent inwardly. A plurality of holes 78 (refer to FIG. 5B) having openings with respect to the surface 34a of the substrate stage 34 are formed along the longitudinal direction of the substrate stage 34. This hole 78 is the second source gas discharge port.

In the 2nd source gas discharge part 70, the 2nd source gas discharge member 72 is provided with the clearance gap 73 of a predetermined space | interval, for example, seven are arranged side by side. An antenna element 32 is disposed at the position of each gap 73. In each 2nd source gas discharge member 72, the part bent inwardly is inserted into the hole 64 formed in the gas discharge plate 42, respectively, and is upwards from the gas discharge plate 42. It protrudes. Moreover, the edge part of each 2nd source gas discharge | release member 72 is connected with the connection pipe 74a, 74b, respectively. In addition, a connecting pipe 76 is connected to the connecting pipe 74b. The 2nd gas supply part 28 (refer FIG. 4) which supplies a 2nd source gas is connected to one connection pipe 76. As shown in FIG.

In addition, in the 2nd source gas discharge part 70, the 2nd source gas discharge member 72, the connection pipes 74a and 74b, and the connection pipe 76 are all in communication. Thereby, when TEOS gas Gs is supplied from the 2nd gas supply part 28, the 2nd source gas discharge | release part 70 will be TEOS from each hole 78 of each 2nd source gas discharge | release member 72. FIG. Gas Gs is blown toward the substrate stage 34.

In addition, as shown in FIG. 5A, the second source gas discharge unit 70 has each of the second source gas discharge members 72 so that the hole 78 faces the substrate stage 34. It is arrange | positioned in the reaction container 18 so that the position of the clearance 33 of the antenna array 30 may be provided. By this structure, in this embodiment, the surface 34a of the board | substrate stage 34 (surface 36a of the board | substrate 36) rather than the clearance gap 33 of the antenna array 30, and the gas radiating part 62. FIG. From the position close to), TEOS gas Gs can be supplied to the reaction chamber 39.

Also in this embodiment, plasma is generated using the antenna array 30 in a state where oxygen gas Gf and TEOS gas are supplied into the reaction chamber 39. As a result, oxygen radicals are obtained, the TEOS gas is activated, and a SiO ₂ film is formed on the surface 36a of the substrate 36.

In addition, in the 2nd source gas discharge | release part 70, the hole 78 of the 2nd source gas discharge | release member 72 is the surface 34a of the board | substrate stage 34 (the surface 36a of the board | substrate 36). ), The shape and arrangement pattern are not particularly limited as long as the TEOS gas Gs is formed to be uniformly discharged. For example, as shown to Fig.5 (c), in the cross section of the tube orthogonal to a longitudinal direction in the circumferential surface of the lower side of the 2nd source gas discharge | release member 72a, it is a hole 78a, 78b. May be formed at positions facing each other.

In the plasma CVD apparatus 60 of this embodiment, TEOS gas (Gs) is discharged from each hole 78 of each second source gas discharge member 72 provided in the gap 33 of the antenna array 30. Therefore, TEOS gas Gs does not flow around the surface 37a of the antenna element 32. In addition, oxygen gas Gf is supplied from the gas discharge port to the periphery of the surface 37a of the antenna element 32.

For this reason, the SiO ₂ produced by the oxygen gas (Gf) and the TEOS gas (Gs), the reaction is not suppressed more than the adhering or deposited on the surface (37a) of the antenna element 32. Thereby, generation | occurrence | production of a particle is further suppressed and furthermore, since the utilization efficiency of oxygen gas Gf and TEOS gas Gs also rises, the film-forming rate can also be improved. Therefore, a film having excellent film quality can be formed at a fast film forming speed. Thus, also in this embodiment, the effect similar to 1st embodiment can be acquired.

In the plasma CVD apparatus 60 of the present embodiment, the second source gas discharge unit 70 is provided, and the TEOS gas Gs is supplied separately, and the substrate stage 34 is provided rather than the gas radiating unit 62. The TEOS gas Gs can be uniformly discharged toward the entire surface 34a of the substrate stage 34 by supplying the TEOS gas Gs from a position close to the substrate 36. Thereby, the uniformity of film-forming speed can also be improved.

Furthermore, in the plasma CVD apparatus 60 of the present embodiment, since the oxygen gas Gf is supplied to the gas radiating part 62, the gas supplied to the gas radiating port 44 of the gas radiating part 62. Some of the ingredients do not accumulate. For this reason, generation | occurrence | production of a particle is suppressed and the maintenance of the gas radiating part 62 can also be simplified.

Moreover, also in the film-forming method by the plasma CVD apparatus 60 of this embodiment, gas from each hole 78 of each 2nd source gas discharge | release member 72 provided in the clearance gap 33 of the antenna element 32 is carried out. Since the TEOS gas Gs is emitted from a position closer to the substrate stage 34 than the radiating portion 62, the periphery of the surface 37a of the antenna element 32 is isolated from the TEOS gas Gs, and thus the oxygen gas. (Gf) and TEOS gas (Gs) are supplied. In addition, since SiO ₂ (reaction product) is also generated on the substrate 36 side than the antenna array 30, the adhesion of SiO ₂ to the surface 37a of the antenna element 32 is further suppressed. Thereby, generation | occurrence | production of a particle is further suppressed, Furthermore, since utilization efficiency of oxygen gas Gf and TEOS gas Gs also rises, the film-forming speed can also be improved. As described above, similarly to the first embodiment, attachment to the surface 37a of the antenna element 32 is suppressed, and the same effect as in the first embodiment can be obtained.

In the present embodiment, a uniform mixed gas of oxygen gas Gf (reactive active species gas) and TEOS gas Gs is generated near the surface 36a of the substrate 36. From this, for example, a SiO ₂ film can be uniformly formed on the surface of the substrate 36. That is, the SiO ₂ film excellent in film thickness uniformity can be formed.

In addition, since the uniform plasma can be generated by the antenna array 30, even if the substrate is large, for example, about 1 m × 1 m, an SiO ₂ film having excellent film thickness uniformity can be formed. have.

In addition, also in this embodiment, a 3rd gas supply part (not shown) is provided instead of the 1st gas supply part 26 like the 1st embodiment, and it replaces the 2nd gas supply part 28, It is good also as a structure which provides a source gas supply part (not shown). In this case, the configurations of the source gas supply unit and the third gas supply unit are the same as in the first embodiment.

In such a structure, the gas (third gas) which is not used for film-forming from the gas spinneret 44 of the gas radiator 62 by the 3rd gas supply part is the whole area | region of the longitudinal direction of the antenna element 32. FIG. Is supplied to the surface 37a of the antenna element 32 and diffused into the reaction chamber 39. In addition, the source gas supplied from the source gas supply unit through the second source gas discharge unit 70 is introduced into the reaction chamber 39 at a constant flow rate. In this way, the antenna array (with the source gas (mixed gas of oxygen gas (first source gas) and TEOS gas (second source gas)) and gas (third gas) supplied into the reaction chamber 39. 30) to generate a plasma. As a result, oxygen radicals are obtained, the TEOS gas is activated, and a SiO ₂ film is formed on the surface 36a of the substrate 36.

In this case, source gas is discharged from the gap 33 between the antenna elements 32 from the holes 78 of the respective second source gas discharge members 72 provided in the gap 33 of the antenna array 30. The gas is supplied separately from the gas (third gas). Furthermore, gas is supplied to the periphery of the surface 37a of the antenna element 32, and the periphery of the surface 37a of the antenna element 32 is isolated from the source gas, and the surface 37a of the antenna element 32 is provided. In the circumference | surroundings), source gas is not supplied. For this reason, adhering or depositing of source gas to the surface 37a of the antenna element 32 is suppressed. Thereby, generation | occurrence | production of a particle is suppressed and also the film-forming speed can also be improved.

In this manner, a source gas supply unit (not shown) is provided in place of the second gas supply unit 28 so as to supply the source gas from the second source gas discharge unit 70. In the case where the third gas supply unit (not shown) is also provided in place of 26), the same effects as those in the first embodiment can be obtained in which a film having excellent film quality can be formed at a fast film forming speed. have.

In the CVD apparatus of any of the above-described embodiments, an apparatus for forming a SiO ₂ film on the surface 36a of the substrate 36 has been described as an example, but the plasma processing apparatus of the present invention is not limited thereto. The plasma processing apparatus of the present invention can be used for film formation of various films in semiconductor devices, flat display panels such as liquid crystal display panels or plasma display panels, and solar cells. Furthermore, the plasma processing apparatus of the present invention may be used as an etching apparatus, and further, may be used for cleaning processing of the substrate stage.

In the CVD apparatus of any of the above-described embodiments, plasma is generated by localizing in the vicinity of the antenna array 30 by using the antenna array 30 including a plurality of monopole antennas as the plasma generation unit. By this configuration, it is possible to relatively arrange the distance between the substrate 36 and the antenna array 30 in a state where the plasma is not directly exposed to the substrate 36 placed on the substrate stage 34. have. This makes it possible to sufficiently approach the distance between the antenna array 30 and the substrate 36 with respect to the excitation life of the oxygen radicals (reactive active species) excited in the vicinity of the antenna array 30. In other words, it is possible to reach the surface of the substrate in a state where oxygen radicals (reactive active species) are sufficiently excited.

Further, in any of the above CVD apparatuses, in order to form a SiO ₂ film on the surface 36a of the substrate 36, oxygen gas Gf (first source gas) and TEOS gas Gs (second source gas) Although it demonstrated using two types of gas of this, this invention is not limited to this. According to the kind of film | membrane which a 1st source gas and a 2nd source gas are formed, the kind and number of gases used are suitably selected. In addition, as a 1st source gas, when exposed to the surface 37a of the antenna element 32, a deposit does not generate | occur | produce on the surface 37a or the adhesion amount of the surface 37a is less than a 2nd source gas. You just need to

Further, as the first source gas, for example, nitrogen gas, hydrogen gas, and argon gas can be used in addition to oxygen gas. Furthermore, as a 2nd source gas, the gas for forming films other than a 1st source gas is used, For example, the gas containing a metal compound is used.

For example, when forming a silicon film, hydrogen gas is used as a 1st source gas, and a silane gas is used as a 2nd source gas. Even in this case, the effects of the present invention can be obtained.

Furthermore, when using two types of gases mixed, for example, in film-forming or etching, around the surface of an antenna element, the gas containing the component which adheres and accumulates on the surface of this antenna element is further accumulated. If such gas is supplied from the gap of an antenna element without supplying, the kind of gas used will not be specifically limited.

As mentioned above, although the plasma processing apparatus of this invention was demonstrated in detail, this invention is not limited to the said embodiment, A various improvement and modification may be made in the range which does not deviate from the main point of this invention. Of course.

Claims (8)

It is a plasma processing apparatus which performs a process to a process target substrate using a 1st source gas and a 2nd source gas, A substrate stage on which the substrate to be processed is disposed; Antenna elements provided above the substrate stage and formed of rod-shaped conductors covered with a dielectric surface are arranged with a plurality of predetermined gaps in a plane parallel to the surface of the substrate stage. A plasma generator for generating plasma using an antenna array, A gas radiating unit provided to cover the plasma generating unit and having a gas radiating plate having a plurality of gas radiating holes provided above the antenna array; A first gas supply unit for supplying the first source gas to radiate from a portion of the plurality of gas spinnerets of the gas radiating plate toward the surface of the substrate stage and through the surface of the antenna element; A second gas supply part for supplying the second source gas to radiate from different portions of the plurality of gas spinnerets of the gas radiating plate toward the surface of the substrate stage and through the gap of the antenna element, The plasma generation unit generates plasma using the antenna array in a state in which the first source gas and the second source gas are supplied to the plasma generation unit. The first source gas is a gas selected from the group consisting of argon, oxygen gas, hydrogen gas and nitrogen gas. The method of claim 1, The plurality of gas spinnerets of the gas spinneret are formed to be open to the plasma generating unit, and when the gas spinneret is viewed from a direction perpendicular to the surface of the substrate stage, among the gas spinnerets, The partition wall which forms a flow path is provided so that it may be connected to all the gas spinnerets formed in the 1st area | region matched with the position of the said antenna element, By this partition all gas spinnerets formed in the said 1st area | region, and the area | region other than this Other gas spinnerets formed in the The first source gas from the first gas supply unit radiates from all the gas spinnerets formed in the first region through the flow path, whereby the first source gas passes through the surface of the antenna element, Supplied toward the surface of the substrate stage, The second source gas from the second gas supply unit radiates from the other gas spinneret, whereby the second source gas is supplied toward the surface of the substrate stage through a gap between the antenna elements. Plasma processing apparatus. The method of claim 1, The plurality of gas spinnerets of the gas spinneret are formed so as to be open to the plasma generating unit, and the antenna element when the gas spinneret is viewed from a direction perpendicular to the surface of the substrate stage among the gas spinnerets. The partitions which form a flow path are provided so that it may be connected to all the gas spinnerets formed in the 2nd area | region matched with the area | region of the clearance gap of this, and by this partition wall, all the gas spinnerets formed in the said 2nd area, and the area | region other than this are provided. The other gas spinneret formed is isolated, The first source gas from the first gas supply unit radiates from the other gas spinneret, whereby the first source gas is supplied toward the surface of the substrate stage through the surface of the antenna element. , The second source gas from the second gas supply unit radiates from all the gas spinnerets formed in the second region through the flow path, whereby the second source gas passes through the gap of the antenna element, And a plasma processing apparatus supplied toward the surface of the substrate stage. The method according to any one of claims 1 to 3, The first source gas is an oxygen gas, and the second source gas is a Tetra-Ethyl-Ortho-Silicate (TEOS) gas. It is a plasma processing apparatus which performs a process to a process target substrate using a 1st source gas and a 2nd source gas, A substrate stage on which the substrate to be processed is disposed; A plasma generation unit provided with an antenna array provided above the substrate stage, the antenna element having a rod-like conductor covered with a dielectric surface and arranged with a plurality of predetermined gaps in a plane parallel to the surface of the substrate stage. Wow, A gas radiating unit provided to cover the plasma generating unit, provided above the antenna array, and having a gas radiating plate having a plurality of gas radiating holes; A second gas discharge part provided in each gap of said antenna element of said plasma generating part, and having a plurality of hollow second gas discharge members having a plurality of holes opened to face said substrate stage; A first gas supply unit configured to supply the first source gas from the gas radiating plate toward the surface of the substrate stage; It has a 2nd gas supply part which supplies said 2nd source gas to the surface of the said substrate stage through the said 2nd gas discharge part, The plasma generation unit generates plasma using the antenna array in a state where the first source gas and the second source gas are supplied. The first source gas is a gas selected from the group consisting of argon, oxygen gas, hydrogen gas and nitrogen gas. The method of claim 5, And the first source gas is oxygen gas, and the second source gas is TEOS gas. It is a plasma processing apparatus which processes a process target substrate using source gas, A substrate stage on which the substrate to be processed is disposed; Plasma is generated using an antenna array which is provided above the substrate stage and is composed of a rod-like conductor covered with a dielectric surface and arranged with a plurality of predetermined gaps in a plane parallel to the surface of the substrate stage. A plasma generating unit, A gas radiating unit provided to cover the plasma generating unit and having a gas radiating plate disposed above the antenna array; A first gas supply unit configured to supply the first source gas and the second source gas to radiate a first source gas and a second source gas from the gas radiator toward the surface of the substrate stage; A third gas supply part supplying the third gas to radiate a third gas from the gas radiating part toward the surface of the substrate stage, The gas spinneret includes a plurality of gas spinnerets opened to the plasma generating unit, and among the gas spinnerets of the gas spinneret, the gas spinneret is viewed from a direction perpendicular to the surface of the substrate stage. In this case, the partition wall which forms a flow path is provided so that it may be connected to all the gas spinnerets formed in the 1st area | region matched with the position of the said antenna element, and by this partition all gas spinnerets formed in the said 1st area | region, and this other than this Other gas spinnerets formed in the area of The third gas from the third gas supply unit radiates from all gas spinnerets formed in the first region through the flow path, whereby the third gas passes through the surface of the antenna element. Supplied toward the surface of the substrate stage, The first source gas and the second source gas from the first gas supply unit are radiated from the other gas spinneret, whereby the first source gas and the second source gas are formed of the antenna element. Through the gap, is supplied toward the surface of the substrate stage, And the plasma generating unit generates plasma using the antenna array while the first source gas, the second source gas, and the third gas are supplied. The method of claim 7, wherein The source gas is a mixed gas of oxygen gas and TEOS gas, and the third gas is an inert gas.

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