US20210098230A1 - Monolithic modular high-frequency plasma source - Google Patents
Monolithic modular high-frequency plasma source Download PDFInfo
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- US20210098230A1 US20210098230A1 US16/586,462 US201916586462A US2021098230A1 US 20210098230 A1 US20210098230 A1 US 20210098230A1 US 201916586462 A US201916586462 A US 201916586462A US 2021098230 A1 US2021098230 A1 US 2021098230A1
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- source array
- dielectric plate
- protrusions
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- monolithic source
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/32119—Windows
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32238—Windows
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
Definitions
- Embodiments relate to the field of semiconductor manufacturing and, in particular, to monolithic source arrays for high-frequency plasma sources.
- Some high-frequency plasma sources include applicators that pass through an opening in a dielectric plate.
- the opening through the dielectric plate allows for the applicator (e.g., a dielectric cavity resonator) to be exposed to the plasma environment.
- the applicator e.g., a dielectric cavity resonator
- plasma is also generated in the opening in the dielectric plate in the space surrounding the applicator. This has the potential of generating plasma non-uniformities within the processing chamber.
- exposing the applicator to the plasma environment may lead to a more rapid degradation of the applicator.
- the applicators are positioned over the dielectric plate or within a cavity into (but not through) the dielectric plate.
- Such configurations have reduced coupling with the interior of the chamber and, therefore, does not provide an optimum plasma generation.
- the coupling of the high-frequency electromagnetic radiation with the interior of the chamber is diminished in part due to the additional interface between the dielectric plate and the applicator across which the high-frequency electromagnetic radiation needs to propagate.
- variations of the interface e.g., positioning of the applicator, surface roughness of the applicator and/or the dielectric plate, angle of the applicator relative to the dielectric plate, etc.
- at each applicator and across different processing tools may result in plasma non-uniformities.
- plasma non-uniformity (within a single processing chamber and/or across different processing chambers (e.g., chamber matching)) is more likely to occur.
- small variations e.g., variations in assembly, machining tolerances, etc.
- plasma non-uniformities that negatively affect processing conditions within the chamber.
- Embodiments disclosed herein include a monolithic source array.
- the monolithic source array comprises a dielectric plate having a first surface and a second surface opposite from the first surface.
- the monolithic source array may further comprise a plurality of protrusions that extend out from the first surface of the dielectric plate, wherein the plurality of protrusions and the dielectric plate are a monolithic structure.
- Additional embodiments may include an assembly for a processing tool.
- the assembly comprises a monolithic source array and a housing.
- the monolithic source array comprises a dielectric plate and a plurality of protrusions extending up from a surface of the dielectric plate.
- the housing comprises a plurality of openings sized to receive each of the protrusions.
- An additional embodiment disclosed herein comprises a processing tool.
- the processing tool comprises a chamber and an assembly interfacing with the chamber.
- the assembly comprises a monolithic source array and a housing.
- the monolithic source array comprises a dielectric plate having a first surface and a second surface opposite from the first surface.
- the second surface is exposed to an interior volume of the chamber, and the second surface is exposed to an exterior environment.
- the monolithic source array may further comprise a plurality of protrusions that extend out from the first surface of the dielectric plate.
- the plurality of protrusions and the dielectric plate are a monolithic structure.
- the housing comprises a conductive body and a plurality of openings through the conductive body. In an embodiment, each opening is sized to surround one of the protrusions.
- FIG. 1 is a schematic illustration of a processing tool that comprises a modular high-frequency emission source with a monolithic source array that comprises a plurality of applicators, in accordance with an embodiment.
- FIG. 2 is a block diagram of a modular high-frequency emission module, in accordance with an embodiment.
- FIG. 3A is a perspective view illustration of a monolithic source array that comprises a plurality of applicators and a dielectric plate, in accordance with an embodiment.
- FIG. 3B is a cross-sectional illustration of the monolithic source array in FIG. 3A along line B-B′, in accordance with an embodiment.
- FIG. 3C is a cross-sectional illustration of the monolithic source array with a passivation layer over a surface of the dielectric plate, in accordance with an embodiment.
- FIG. 3D is a cross-sectional illustration of the monolithic source array with a conductive layer over one or more surfaces, in accordance with an embodiment.
- FIG. 3E is a plan view illustration of a monolithic source array with a plurality of applicators that are hexagonal in shape, in accordance with an embodiment.
- FIG. 4A is a perspective view illustration of a monolithic source array and a housing that interfaces with the monolithic source array to form an assembly, in accordance with an embodiment.
- FIG. 4B is a cross-sectional illustration of assembly after the monolithic source array and the housing mated together, in accordance with an embodiment.
- FIG. 4C is a cross-sectional illustration of an applicator that comprises components from the assembly, in accordance with an embodiment.
- FIG. 5 is a cross-sectional illustration of a processing tool that comprises an assembly that includes a monolithic source array and a housing, in accordance with an embodiment.
- FIG. 6 illustrates a block diagram of an exemplary computer system that may be used in conjunction with a high-frequency plasma tool, in accordance with an embodiment.
- high-frequency plasma sources with discrete applicators may result in plasma non-uniformities within a chamber and in non-optimum injection of the high-frequency electromagnetic radiation into the chamber.
- the non-uniformities in the plasma may arise for different reasons, such as assembly issues, manufacturing tolerances, degradation, and the like.
- the non-optimum injection of the high-frequency electromagnetic radiation into the chamber may result (in part) from the interface between the applicator and the dielectric plate.
- the monolithic source array comprises a dielectric plate and a plurality of protrusions that extend up from a surface of the dielectric plate.
- the protrusions and the dielectric plate form a monolithic part. That is, the protrusions and the dielectric plate are fabricated from a single block of material.
- the protrusions have dimensions suitable for being used as the applicators. For example, holes into the protrusions may be fabricated that accommodate a monopole antenna. The protrusions may, therefore, function as a dielectric cavity resonator.
- the source array as a monolithic part has several advantages.
- One benefit is that tight machining tolerances may be maintained in order to provide a high degree of uniformity between parts. Whereas discrete applicators need assembly, the monolithic source array avoids possible assembly variations. Additionally, the use of a monolithic source array provides improved injection of high-frequency electromagnetic radiation into the chamber, because there is no longer a physical interface between the applicator and the dielectric plate.
- Monolithic source arrays also provide improved plasma uniformity in the chamber.
- the surface of the dielectric plate that is exposed to the plasma does not include any gaps to accommodate the applicators.
- the lack of a physical interface between the protrusions and the dielectric plate improves lateral electric field spreading in the dielectric plate.
- the processing tool 100 may be a processing tool suitable for any type of processing operation that utilizes a plasma.
- the processing tool 100 may be a processing tool used for plasma enhanced chemical vapor deposition (PECVD), plasma enhanced atomic layer deposition (PEALD), etch and selective removal processes, and plasma cleaning.
- Additional embodiments may include a processing tool 100 that utilizes high-frequency electromagnetic radiation without the generation of a plasma (e.g., microwave heating, etc.).
- high-frequency electromagnetic radiation includes radio frequency radiation, very-high-frequency radiation, ultra-high-frequency radiation, and microwave radiation. “High-frequency” may refer to frequencies between 0.1 MHz and 300 GHz.
- embodiments include a processing tool 100 that includes a chamber 178 .
- the chamber 178 may be a vacuum chamber.
- a vacuum chamber may include a pump (not shown) for removing gases from the chamber to provide the desired vacuum.
- Additional embodiments may include a chamber 178 that includes one or more gas lines 170 for providing processing gasses into the chamber 178 and exhaust lines 172 for removing byproducts from the chamber 178 .
- gas may also be injected into the chamber 178 through a monolithic source array 150 (e.g., as a showerhead) for evenly distributing the processing gases over a substrate 174 .
- the substrate 174 may be supported on a chuck 176 .
- the chuck 176 may be any suitable chuck, such as an electrostatic chuck.
- the chuck 176 may also include cooling lines and/or a heater to provide temperature control to the substrate 174 during processing. Due to the modular configuration of the high-frequency emission modules described herein, embodiments allow for the processing tool 100 to accommodate any sized substrate 174 .
- the substrate 174 may be a semiconductor wafer (e.g., 200 mm, 300 mm, 450 mm, or larger).
- Alternative embodiments also include substrates 174 other than semiconductor wafers.
- embodiments may include a processing tool 100 configured for processing glass substrates, (e.g., for display technologies).
- the processing tool 100 includes a modular high-frequency emission source 104 .
- the modular high-frequency emission source 104 may comprise an array of high-frequency emission modules 105 .
- each high-frequency emission module 105 may include an oscillator module 106 , an amplification module 130 , and an applicator 142 .
- the applicators 142 are schematically shown as being integrated into the monolithic source array 150 .
- the monolithic source array 150 may be a monolithic structure that comprises one or more portions of the applicator 142 (e.g., a dielectric resonating body) and a dielectric plate that faces the interior of the chamber 178 .
- the oscillator module 106 and the amplification module 130 may comprise electrical components that are solid state electrical components.
- each of the plurality of oscillator modules 106 may be communicatively coupled to different amplification modules 130 .
- each oscillator module 106 may be electrically coupled to a single amplification module 130 .
- the plurality of oscillator modules 106 may generate incoherent electromagnetic radiation. Accordingly, the electromagnetic radiation induced in the chamber 178 will not interact in a manner that results in an undesirable interference pattern.
- each oscillator module 106 generates high-frequency electromagnetic radiation that is transmitted to the amplification module 130 . After processing by the amplification module 130 , the electromagnetic radiation is transmitted to the applicator 142 .
- the applicators 142 each emit electromagnetic radiation into the chamber 178 .
- the applicators 142 couple the electromagnetic radiation to the processing gasses in the chamber 178 to produce a plasma.
- the high-frequency emission module 105 comprises an oscillator module 106 .
- the oscillator module 106 may include a voltage control circuit 210 for providing an input voltage to a voltage controlled oscillator 220 in order to produce high-frequency electromagnetic radiation at a desired frequency.
- Embodiments may include an input voltage between approximately 1V and 10V DC.
- the voltage controlled oscillator 220 is an electronic oscillator whose oscillation frequency is controlled by the input voltage. According to an embodiment, the input voltage from the voltage control circuit 210 results in the voltage controlled oscillator 220 oscillating at a desired frequency.
- the high-frequency electromagnetic radiation may have a frequency between approximately 0.1 MHz and 30 MHz. In an embodiment, the high-frequency electromagnetic radiation may have a frequency between approximately 30 MHz and 300 MHz. In an embodiment, the high-frequency electromagnetic radiation may have a frequency between approximately 300 MHz and 1 GHz. In an embodiment, the high-frequency electromagnetic radiation may have a frequency between approximately 1 GHz and 300 GHz.
- the electromagnetic radiation is transmitted from the voltage controlled oscillator 220 to an amplification module 130 .
- the amplification module 130 may include a driver/pre-amplifier 234 , and a main power amplifier 236 that are each coupled to a power supply 239 .
- the amplification module 130 may operate in a pulse mode.
- the amplification module 130 may have a duty cycle between 1% and 99%.
- the amplification module 130 may have a duty cycle between approximately 15% and 50%.
- the electromagnetic radiation may be transmitted to the thermal break 249 and the applicator 142 after being processed by the amplification module 130 .
- part of the power transmitted to the thermal break 249 may be reflected back due to the mismatch in the output impedance.
- some embodiments include a detector module 281 that allows for the level of forward power 283 and reflected power 282 to be sensed and fed back to the control circuit module 221 . It is to be appreciated that the detector module 281 may be located at one or more different locations in the system (e.g., between the circulator 238 and the thermal break 249 ).
- control circuit module 221 interprets the forward power 283 and the reflected power 282 , and determines the level for the control signal 285 that is communicatively coupled to the oscillator module 106 and the level for the control signal 286 that is communicatively coupled to the amplification module 130 .
- control signal 285 adjusts the oscillator module 106 to optimize the high-frequency radiation coupled to the amplification module 130 .
- control signal 286 adjusts the amplification module 130 to optimize the output power coupled to the applicator 142 through the thermal break 249 .
- the feedback control of the oscillator module 106 and the amplification module 130 in addition to the tailoring of the impedance matching in the thermal break 249 may allow for the level of the reflected power to be less than approximately 5% of the forward power. In some embodiments, the feedback control of the oscillator module 106 and the amplification module 130 may allow for the level of the reflected power to be less than approximately 2% of the forward power.
- embodiments allow for an increased percentage of the forward power to be coupled into the processing chamber 178 , and increases the available power coupled to the plasma.
- impedance tuning using a feedback control is superior to impedance tuning in typical slot-plate antennas.
- the impedance tuning involves moving two dielectric slugs formed in the applicator. This involves mechanical motion of two separate components in the applicator, which increases the complexity of the applicator. Furthermore, the mechanical motion may not be as precise as the change in frequency that may be provided by a voltage controlled oscillator 220 .
- the monolithic source array 350 comprises a dielectric plate 360 and a plurality of protrusions 366 that extend up from the dielectric plate 360 .
- the dielectric plate 360 and the plurality of protrusions 366 are a monolithic structure. That is, there is no physical interface between a bottom of the protrusions 366 and a first surface 361 of the dielectric plate 360 .
- a “physical interface” refers to a first surface of a first discrete body contacting a second surface of a second discrete body.
- Each of the protrusions 366 are a portion of the applicator 142 used to inject high-frequency electromagnetic radiation into a processing chamber 178 . Particularly, the protrusions 366 function as the resonating body of the applicator 142 .
- Other components of the applicator 142 e.g., the monopole antenna and the grounded housing surrounding the resonating body may be discrete components from the monolithic source array 350 and are described in greater detail below.
- the dielectric plate 360 comprises a first surface 361 and a second surface 362 opposite from the first surface 361 .
- the dielectric plate has a first thickness T 1 between the first surface 361 and the second surface 362 .
- the first thickness T 1 is less than approximately 30 mm, less than approximately 20 mm, less than approximately 10 mm, or less than approximately 5 mm.
- the first thickness T 1 is approximately 3 mm. Decreasing the first thickness T 1 provides improved coupling of high-frequency electromagnetic radiation into the processing chamber.
- increases to the first thickness T 1 may provide improved mechanical support and decreases the probability of a mechanical failure (e.g., the dielectric plate 360 cracking).
- the dielectric plate 360 is shown with a substantially circular shape. However, it is to be appreciated that the dielectric plate 360 may have any desired shape (e.g., polygonal, elliptical, wedge shaped, or the like).
- the plurality of protrusions 366 extend up from the first surface 361 of the dielectric plate 360 .
- sidewalls 364 are oriented substantially perpendicular to the first surface 361 of the dielectric plate 360 .
- the protrusions 366 further comprise a third surface 363 .
- the third surface 363 may be substantially parallel to the first surface 361 .
- a hole 365 is disposed into the third surface 363 of each protrusion.
- the hole 365 is sized to accommodate a monopole antenna of the applicator 142 .
- the hole 365 is positioned at the axial center of the protrusion 366 .
- the protrusions 366 may have a second thickness T 2 between the first surface 361 and the third surface 363 .
- the second thickness T 2 may be chosen to provide a resonating body for the applicator.
- the dimensions of the protrusions 366 may depend on at least the material of the monolithic source array, the thickness of the dielectric plate 360 , the desired operating frequency, among other considerations.
- Embodiments may generally include decreasing the second thickness T 2 of the protrusion as the first thickness T 1 of the dielectric plate increases
- the plurality of protrusions 366 are arranged in an array. In the illustrated embodiment, the plurality of protrusions 366 are arranged in a close-packed array, though other packing arrangements are possible. Furthermore, while nineteen protrusions 366 are shown, it is to be appreciated that embodiments may include one or more protrusions 366 extending away from the first surface 361 of the dielectric plate 360 . In the illustrated embodiment, each of the protrusions 366 have the same dimensions (e.g., thickness T 2 and width W). In other embodiments, the dimensions of the protrusions 366 may be non-uniform.
- the monolithic source array 350 comprises a dielectric material.
- the monolithic source array 350 may be a ceramic material.
- one suitable ceramic material that may be used for the monolithic source array 350 is Al 2 O 3 .
- the monolithic structure may be fabricated from a single block of material.
- a rough shape of the monolithic source array 350 may be formed with a molding process, and subsequently machined to provide the final structure with the desired dimensions. For example, green state machining and firing may be used to provide the desired shape of the monolithic source array 350 .
- FIG. 3B a cross-sectional illustration of the monolithic source array 350 in FIG. 3A along line B-B′ is shown, in accordance with an embodiment.
- the sidewall surface 364 of the protrusions 366 intersects with the first surface 361 of the dielectric plate 360 . That is, the bottom of protrusion 366 seamlessly transitions into the dielectric plate 360 without there being a physical interface between the protrusion 366 and the dielectric plate 360 .
- FIG. 3B more clearly illustrates the depth D of the holes 365 into the third surfaces 363 of the protrusions 366 .
- the depth D of the holes 365 is less than the second thickness T 2 of the protrusions 366 .
- the holes 365 do not extend down into the dielectric plate 360 of the monolithic source array 350 .
- the holes 365 may have a depth D that is greater than the second thickness T 2 of the protrusions 366 and extend into the dielectric plate 360 of the monolithic source array 350 .
- FIG. 3C a cross-sectional illustration of a monolithic source array 350 is shown, in accordance with an additional embodiment.
- the monolithic source array 350 in FIG. 3C may be substantially similar to the monolithic source array 350 in FIG. 3B , with the exception that a dielectric layer 367 is disposed over one or more surfaces of the monolithic source array 350 .
- the dielectric layer 367 is disposed over the second surface 362 of the dielectric plate 360 .
- a dielectric layer 367 may be disposed over any number of surfaces of the monolithic source array 350 .
- dielectric layers 367 may be disposed over the first surface 361 , the third surfaces 363 , the sidewall surfaces 364 , or within the holes 365 .
- different dielectric layers 367 may be disposed over different surfaces.
- a first dielectric layer 367 with a first composition may be disposed over the first surface 361
- a second dielectric layer 367 with a second composition may be disposed over the second surface 362 .
- the dielectric layer 367 may be a chemically inert dielectric layer in order to provide protection to portions of the monolithic source array 350 that would otherwise be exposed to the chamber interior. For example, when left uncovered, portions of the second surface 362 may be exposed to a plasma environment and be more susceptible to erosion or other degradation.
- a chemically inert dielectric layer 367 may comprise one or more of Al 2 O 3 , SiO 2 , SiN, a transition metal oxide (e.g., Y 2 O 3 , HfO 2 , or La 2 O 3 ), a transition metal nitride, and combinations thereof.
- Such chemically inert dielectric layers 367 may further comprise fluorine (F).
- Embodiments may also include inert dielectric layers 367 that include compositions comprising groups of elements (e.g., aluminum-oxygen-nitrogen (Al—O—N), aluminum-hafnium-oxygen-fluorine (Al—Hf—O—F), yttrium-oxygen-fluorine-nitrogen (Y—O—F—N), or hafnium-zirconium-oxygen-fluorine-nitrogen (Hf—Zr—O—F—N)).
- groups of elements e.g., aluminum-oxygen-nitrogen (Al—O—N), aluminum-hafnium-oxygen-fluorine (Al—Hf—O—F), yttrium-oxygen-fluorine-nitrogen (Y—O—F—N), or hafnium-zirconium-oxygen-fluorine-nitrogen (Hf—Zr—O—F—N)
- inert dielectric layers 367 may be deposited over the monolithic source array 350 with any suitable deposition process.
- the inert dielectric layers 367 may be applied using plasma spray coating, thermal spray coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), sputtering, atomic layer deposition (ALD), or plasma-enhanced ALD (PE-ALD).
- the monolithic source array 350 in FIG. 3D may be substantially similar to the monolithic source array 350 in FIG. 3B , with the exception that a conductive layer 391 is disposed over one or more surfaces.
- the conductive layer 391 may be disposed over one or more of the first surface 361 , the third surface 363 , and the sidewalls 364 of the protrusions 366 .
- the conductive layer 391 may be grounded.
- the third surface 363 may not be entirely covered by the conductive layer 391 .
- portions of the third surface 363 proximate to the holes 365 may be exposed to reduce the probability of arcing between the conductive layer 391 and the antenna (not shown) that is inserted into the hole 365 .
- the conductive layer 391 may be any suitable conductive layer (e.g., aluminum, titanium, etc.).
- FIG. 3D a plan view illustration of a monolithic source array 350 is shown in accordance with an additional embodiment.
- the monolithic source array 350 is substantially similar to the monolithic source array 350 in FIG. 3A , with the exception that the protrusions 366 have a different cross section as viewed along a plane parallel to the first surface 361 .
- the outlines of the protrusions 366 are substantially hexagonal in shape, as opposed to being circular in FIG. 3A . While examples of circular and hexagonal cross-sections are shown, it is to be appreciated that the protrusions 366 may comprise many different cross-sections.
- the cross-section of the protrusions 366 may have any shape that is centrally symmetric.
- the assembly 470 comprises a monolithic source array 450 and a housing 472 .
- the monolithic source array 450 may be substantially similar to the monolithic source arrays 350 described above.
- the monolithic source array 450 may comprise a dielectric plate 460 and a plurality of protrusions 466 that extend up from the dielectric plate 460 .
- the housing 472 comprises a conductive body 473 .
- the conductive body 473 may be aluminum or the like.
- the housing comprises a plurality of openings 474 .
- the openings 474 may pass entirely through a thickness of the conductive body 473 .
- the openings 474 may be sized to receive the protrusions 466 .
- the protrusions 466 will be inserted into the openings 474 .
- the housing 472 is shown as a single conductive body 473 .
- the housing 472 may comprise one or more discrete conductive components.
- the discrete components may be individually grounded, or the discrete components may be joined mechanically or by any form of metallic bonding, to form a single electrically conductive body 473 .
- FIG. 4B a cross-sectional illustration of the assembly 470 is shown, in accordance with an embodiment.
- the conductive body 473 of the housing 472 is supported by the first surface 461 of the dielectric plate 460 .
- the conductive body 473 is directly supported by the first surface 461 , but it is to be appreciated that a thermal interface material or the like may separate the conductive body 473 from the first surface 461 .
- the second surface 462 of the dielectric plate 460 faces away from the housing 472 .
- the housing 472 has a third thickness T 3 .
- the third thickness T 3 of the housing 472 may be similar to the second thickness T 2 of the protrusions 466 . In other embodiments, the third thickness T 3 of the housing 472 may be larger or smaller than the second thickness T 2 of the protrusions 466 .
- the openings 474 have an opening diameter O that is greater than the width W of the protrusions 466 .
- the difference in the dimensions results in a gap 475 between sidewalls of the protrusions 466 and the sidewalls of the conductive body 473 .
- the gap 475 may be suitable to allow for some degree of thermal expansion while still maintaining a secure fit between the monolithic source array 450 and the housing 472 .
- the second surface 462 is configured to be exposed to a chamber volume.
- the opposite side of the assembly 470 is configured to be exposed to the atmosphere or other environments with pressures higher than that of the chamber volume during operation (e.g., approximately 1.0 atm or higher). Accordingly, the small gaps 475 between the conductive body 473 and the protrusions 466 will not experience a low pressure environment suitable for igniting a plasma.
- the applicator 442 comprises the protrusion 466 , the conductive body 473 surrounding the protrusion 466 , and the monopole antenna 468 extending into the hole 465 .
- a conductive plate 476 may also cover a top surface of the protrusion 466 . Accordingly, portions of the assembly 470 may be used as components of the applicator 442 .
- the protrusion 466 is part of the monolithic source array 450 and functions as the dielectric cavity resonator of the applicator 442
- the conductive body 473 is part of the housing 472 and functions as the ground plane surrounding dielectric cavity resonator for the applicator 442 .
- the monopole antenna 468 may be surrounded by shielding 469 above the assembly 470 , and the monopole antenna 468 may be electrically coupled to a high-frequency power source (e.g., a high-frequency emission module 105 or the like).
- the monopole antenna 468 passes through conductive plate 476 and extends into the hole 465 .
- the hole 465 extends deeper into the protrusion 466 than the monopole antenna 468 .
- the width of the hole 465 may be greater than the width of the monopole antenna 468 . Accordingly, tolerances for thermal expansion are provided in some embodiments in order to prevent damage to the monolithic source array 450 . Also shown in FIG.
- thermal interface material 477 is a thermal interface material 477 between a bottom surface of the conductive body 473 and the first surface 461 of the dielectric plate 460 .
- a thermal interface material 477 may improve heat transfer between the conductive body 473 and the dielectric plate 460 when active heating or cooling is implemented in the assembly 470 .
- the thermal interface material 477 may be a bonding layer, or a thermal interface material 477 and a bonding layer.
- the processing tool comprises a chamber 578 that is sealed by an assembly 570 .
- the assembly 570 may rest against one or more o-rings 581 to provide a vacuum seal to an interior volume 583 of the chamber 578 .
- the assembly 570 may interface with the chamber 578 . That is, the assembly 570 may be part of a lid that seals the chamber 578 .
- the processing tool 500 may comprise a plurality of processing volumes (which may be fluidically coupled together), with each processing volume having a different assembly 570 .
- a chuck 579 or the like may support a workpiece 574 (e.g., wafer, substrate, etc.).
- the assembly 570 may be substantially similar to the assemblies 470 described above.
- the assembly 570 comprises a monolithic source array 550 and a housing 572 .
- the monolithic source array 550 may comprise a dielectric plate 560 and a plurality of protrusions 566 extending up from a first surface 561 of the dielectric plate 560 .
- a second surface 562 of the dielectric plate 560 may be exposed to the interior volume 583 of the chamber 578 .
- the housing 572 may having openings sized to receive the protrusions 566 .
- gaps 575 may be provided between the protrusions 566 and the conductive body 573 of the housing 572 to allow for thermal expansion.
- monopole antennas 568 may extend into holes 565 in the protrusions 566 .
- the monopole antennas 568 may pass through a top plate 576 over the housing 572 and the protrusions 566 .
- the chamber volume 583 may be suitable for striking a plasma 582 . That is, the chamber volume 583 may be a vacuum chamber. In an embodiment, only the second surface 562 is exposed to the chamber volume 583 (if it is not covered by a dielectric layer, such as those described above). The opposite surfaces are outside of the chamber volume 583 and, therefore, do not experience the low pressure conditions needed to strike a plasma 582 . Accordingly, even when there are high electric fields in the gaps 575 between the sidewalls of the protrusions 566 and the conductive body 573 , there is no plasma generated.
- Computer system 660 is coupled to and controls processing in the processing tool.
- Computer system 660 may be connected (e.g., networked) to other machines in a Local Area Network (LAN), an intranet, an extranet, or the Internet.
- Computer system 660 may operate in the capacity of a server or a client machine in a client-server network environment, or as a peer machine in a peer-to-peer (or distributed) network environment.
- Computer system 660 may be a personal computer (PC), a tablet PC, a set-top box (STB), a Personal Digital Assistant (PDA), a cellular telephone, a web appliance, a server, a network router, switch or bridge, or any machine capable of executing a set of instructions (sequential or otherwise) that specify actions to be taken by that machine.
- PC personal computer
- PDA Personal Digital Assistant
- STB set-top box
- STB set-top box
- PDA Personal Digital Assistant
- a cellular telephone a web appliance
- server a server
- network router switch or bridge
- any machine capable of executing a set of instructions (sequential or otherwise) that specify actions to be taken by that machine.
- machine shall also be taken to include any collection of machines (e.g., computers) that individually or jointly execute a set (or multiple sets) of instructions to perform any one or more of the methodologies described herein.
- Computer system 660 may include a computer program product, or software 622 , having a non-transitory machine-readable medium having stored thereon instructions, which may be used to program computer system 660 (or other electronic devices) to perform a process according to embodiments.
- a machine-readable medium includes any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computer).
- a machine-readable (e.g., computer-readable) medium includes a machine (e.g., a computer) readable storage medium (e.g., read only memory (“ROM”), random access memory (“RAM”), magnetic disk storage media, optical storage media, flash memory devices, etc.), a machine (e.g., computer) readable transmission medium (electrical, optical, acoustical or other form of propagated signals (e.g., infrared signals, digital signals, etc.)), etc.
- computer system 660 includes a system processor 602 , a main memory 604 (e.g., read-only memory (ROM), flash memory, dynamic random access memory (DRAM) such as synchronous DRAM (SDRAM) or Rambus DRAM (RDRAM), etc.), a static memory 606 (e.g., flash memory, static random access memory (SRAM), etc.), and a secondary memory 618 (e.g., a data storage device), which communicate with each other via a bus 630 .
- main memory 604 e.g., read-only memory (ROM), flash memory, dynamic random access memory (DRAM) such as synchronous DRAM (SDRAM) or Rambus DRAM (RDRAM), etc.
- static memory 606 e.g., flash memory, static random access memory (SRAM), etc.
- secondary memory 618 e.g., a data storage device
- System processor 602 represents one or more general-purpose processing devices such as a microsystem processor, central processing unit, or the like. More particularly, the system processor may be a complex instruction set computing (CISC) microsystem processor, reduced instruction set computing (RISC) microsystem processor, very long instruction word (VLIW) microsystem processor, a system processor implementing other instruction sets, or system processors implementing a combination of instruction sets. System processor 602 may also be one or more special-purpose processing devices such as an application specific integrated circuit (ASIC), a field programmable gate array (FPGA), a digital signal system processor (DSP), network system processor, or the like. System processor 602 is configured to execute the processing logic 626 for performing the operations described herein.
- ASIC application specific integrated circuit
- FPGA field programmable gate array
- DSP digital signal system processor
- the computer system 660 may further include a system network interface device 608 for communicating with other devices or machines.
- the computer system 660 may also include a video display unit 610 (e.g., a liquid crystal display (LCD), a light emitting diode display (LED), or a cathode ray tube (CRT)), an alphanumeric input device 612 (e.g., a keyboard), a cursor control device 614 (e.g., a mouse), and a signal generation device 616 (e.g., a speaker).
- a video display unit 610 e.g., a liquid crystal display (LCD), a light emitting diode display (LED), or a cathode ray tube (CRT)
- an alphanumeric input device 612 e.g., a keyboard
- a cursor control device 614 e.g., a mouse
- a signal generation device 616 e.g., a speaker
- the secondary memory 618 may include a machine-accessible storage medium 632 (or more specifically a computer-readable storage medium) on which is stored one or more sets of instructions (e.g., software 622 ) embodying any one or more of the methodologies or functions described herein.
- the software 622 may also reside, completely or at least partially, within the main memory 604 and/or within the system processor 602 during execution thereof by the computer system 660 , the main memory 604 and the system processor 602 also constituting machine-readable storage media.
- the software 622 may further be transmitted or received over a network 620 via the system network interface device 608 .
- the network interface device 608 may operate using RF coupling, optical coupling, acoustic coupling, or inductive coupling.
- machine-accessible storage medium 632 is shown in an exemplary embodiment to be a single medium, the term “machine-readable storage medium” should be taken to include a single medium or multiple media (e.g., a centralized or distributed database, and/or associated caches and servers) that store the one or more sets of instructions.
- the term “machine-readable storage medium” shall also be taken to include any medium that is capable of storing or encoding a set of instructions for execution by the machine and that cause the machine to perform any one or more of the methodologies.
- the term “machine-readable storage medium” shall accordingly be taken to include, but not be limited to, solid-state memories, and optical and magnetic media.
Abstract
Description
- Embodiments relate to the field of semiconductor manufacturing and, in particular, to monolithic source arrays for high-frequency plasma sources.
- Some high-frequency plasma sources include applicators that pass through an opening in a dielectric plate. The opening through the dielectric plate allows for the applicator (e.g., a dielectric cavity resonator) to be exposed to the plasma environment. However, it has been shown that plasma is also generated in the opening in the dielectric plate in the space surrounding the applicator. This has the potential of generating plasma non-uniformities within the processing chamber. Furthermore, exposing the applicator to the plasma environment may lead to a more rapid degradation of the applicator.
- In some embodiments, the applicators are positioned over the dielectric plate or within a cavity into (but not through) the dielectric plate. Such configurations have reduced coupling with the interior of the chamber and, therefore, does not provide an optimum plasma generation. The coupling of the high-frequency electromagnetic radiation with the interior of the chamber is diminished in part due to the additional interface between the dielectric plate and the applicator across which the high-frequency electromagnetic radiation needs to propagate. Additionally, variations of the interface (e.g., positioning of the applicator, surface roughness of the applicator and/or the dielectric plate, angle of the applicator relative to the dielectric plate, etc.) at each applicator and across different processing tools may result in plasma non-uniformities.
- Particularly, when the applicators are discrete components from the dielectric plate, plasma non-uniformity (within a single processing chamber and/or across different processing chambers (e.g., chamber matching)) is more likely to occur. For example, with discrete components, small variations (e.g., variations in assembly, machining tolerances, etc.) can result in plasma non-uniformities that negatively affect processing conditions within the chamber.
- Embodiments disclosed herein include a monolithic source array. In an embodiment, the monolithic source array comprises a dielectric plate having a first surface and a second surface opposite from the first surface. The monolithic source array may further comprise a plurality of protrusions that extend out from the first surface of the dielectric plate, wherein the plurality of protrusions and the dielectric plate are a monolithic structure.
- Additional embodiments may include an assembly for a processing tool. In an embodiment, the assembly comprises a monolithic source array and a housing. In an embodiment, the monolithic source array comprises a dielectric plate and a plurality of protrusions extending up from a surface of the dielectric plate. In an embodiment, the housing comprises a plurality of openings sized to receive each of the protrusions.
- An additional embodiment disclosed herein comprises a processing tool. In an embodiment, the processing tool comprises a chamber and an assembly interfacing with the chamber. In an embodiment, the assembly comprises a monolithic source array and a housing. In an embodiment, the monolithic source array comprises a dielectric plate having a first surface and a second surface opposite from the first surface. In an embodiment, the second surface is exposed to an interior volume of the chamber, and the second surface is exposed to an exterior environment. The monolithic source array may further comprise a plurality of protrusions that extend out from the first surface of the dielectric plate. In an embodiment, the plurality of protrusions and the dielectric plate are a monolithic structure. In an embodiment, the housing comprises a conductive body and a plurality of openings through the conductive body. In an embodiment, each opening is sized to surround one of the protrusions.
-
FIG. 1 is a schematic illustration of a processing tool that comprises a modular high-frequency emission source with a monolithic source array that comprises a plurality of applicators, in accordance with an embodiment. -
FIG. 2 is a block diagram of a modular high-frequency emission module, in accordance with an embodiment. -
FIG. 3A is a perspective view illustration of a monolithic source array that comprises a plurality of applicators and a dielectric plate, in accordance with an embodiment. -
FIG. 3B is a cross-sectional illustration of the monolithic source array inFIG. 3A along line B-B′, in accordance with an embodiment. -
FIG. 3C is a cross-sectional illustration of the monolithic source array with a passivation layer over a surface of the dielectric plate, in accordance with an embodiment. -
FIG. 3D is a cross-sectional illustration of the monolithic source array with a conductive layer over one or more surfaces, in accordance with an embodiment. -
FIG. 3E is a plan view illustration of a monolithic source array with a plurality of applicators that are hexagonal in shape, in accordance with an embodiment. -
FIG. 4A is a perspective view illustration of a monolithic source array and a housing that interfaces with the monolithic source array to form an assembly, in accordance with an embodiment. -
FIG. 4B is a cross-sectional illustration of assembly after the monolithic source array and the housing mated together, in accordance with an embodiment. -
FIG. 4C is a cross-sectional illustration of an applicator that comprises components from the assembly, in accordance with an embodiment. -
FIG. 5 is a cross-sectional illustration of a processing tool that comprises an assembly that includes a monolithic source array and a housing, in accordance with an embodiment. -
FIG. 6 illustrates a block diagram of an exemplary computer system that may be used in conjunction with a high-frequency plasma tool, in accordance with an embodiment. - Systems described herein include monolithic source arrays for high-frequency plasma sources. In the following description, numerous specific details are set forth in order to provide a thorough understanding of embodiments. It will be apparent to one skilled in the art that embodiments may be practiced without these specific details. In other instances, well-known aspects are not described in detail in order to not unnecessarily obscure embodiments. Furthermore, it is to be understood that the various embodiments shown in the accompanying drawings are illustrative representations and are not necessarily drawn to scale.
- As noted above, high-frequency plasma sources with discrete applicators may result in plasma non-uniformities within a chamber and in non-optimum injection of the high-frequency electromagnetic radiation into the chamber. The non-uniformities in the plasma may arise for different reasons, such as assembly issues, manufacturing tolerances, degradation, and the like. The non-optimum injection of the high-frequency electromagnetic radiation into the chamber may result (in part) from the interface between the applicator and the dielectric plate.
- Accordingly, embodiments disclosed herein include a monolithic source array. In an embodiment, the monolithic source array comprises a dielectric plate and a plurality of protrusions that extend up from a surface of the dielectric plate. Particularly, the protrusions and the dielectric plate form a monolithic part. That is, the protrusions and the dielectric plate are fabricated from a single block of material. The protrusions have dimensions suitable for being used as the applicators. For example, holes into the protrusions may be fabricated that accommodate a monopole antenna. The protrusions may, therefore, function as a dielectric cavity resonator.
- Implementing the source array as a monolithic part has several advantages. One benefit is that tight machining tolerances may be maintained in order to provide a high degree of uniformity between parts. Whereas discrete applicators need assembly, the monolithic source array avoids possible assembly variations. Additionally, the use of a monolithic source array provides improved injection of high-frequency electromagnetic radiation into the chamber, because there is no longer a physical interface between the applicator and the dielectric plate.
- Monolithic source arrays also provide improved plasma uniformity in the chamber. Particularly, the surface of the dielectric plate that is exposed to the plasma does not include any gaps to accommodate the applicators. Furthermore, the lack of a physical interface between the protrusions and the dielectric plate improves lateral electric field spreading in the dielectric plate.
- Referring now to
FIG. 1 , a cross-sectional illustration of aplasma processing tool 100 is shown, according to an embodiment. In some embodiments, theprocessing tool 100 may be a processing tool suitable for any type of processing operation that utilizes a plasma. For example, theprocessing tool 100 may be a processing tool used for plasma enhanced chemical vapor deposition (PECVD), plasma enhanced atomic layer deposition (PEALD), etch and selective removal processes, and plasma cleaning. Additional embodiments may include aprocessing tool 100 that utilizes high-frequency electromagnetic radiation without the generation of a plasma (e.g., microwave heating, etc.). As used herein, “high-frequency” electromagnetic radiation includes radio frequency radiation, very-high-frequency radiation, ultra-high-frequency radiation, and microwave radiation. “High-frequency” may refer to frequencies between 0.1 MHz and 300 GHz. - Generally, embodiments include a
processing tool 100 that includes achamber 178. Inprocessing tools 100, thechamber 178 may be a vacuum chamber. A vacuum chamber may include a pump (not shown) for removing gases from the chamber to provide the desired vacuum. Additional embodiments may include achamber 178 that includes one ormore gas lines 170 for providing processing gasses into thechamber 178 andexhaust lines 172 for removing byproducts from thechamber 178. While not shown, it is to be appreciated that gas may also be injected into thechamber 178 through a monolithic source array 150 (e.g., as a showerhead) for evenly distributing the processing gases over asubstrate 174. - In an embodiment, the
substrate 174 may be supported on achuck 176. For example, thechuck 176 may be any suitable chuck, such as an electrostatic chuck. Thechuck 176 may also include cooling lines and/or a heater to provide temperature control to thesubstrate 174 during processing. Due to the modular configuration of the high-frequency emission modules described herein, embodiments allow for theprocessing tool 100 to accommodate anysized substrate 174. For example, thesubstrate 174 may be a semiconductor wafer (e.g., 200 mm, 300 mm, 450 mm, or larger). Alternative embodiments also includesubstrates 174 other than semiconductor wafers. For example, embodiments may include aprocessing tool 100 configured for processing glass substrates, (e.g., for display technologies). - According to an embodiment, the
processing tool 100 includes a modular high-frequency emission source 104. The modular high-frequency emission source 104 may comprise an array of high-frequency emission modules 105. In an embodiment, each high-frequency emission module 105 may include anoscillator module 106, anamplification module 130, and anapplicator 142. As shown, theapplicators 142 are schematically shown as being integrated into themonolithic source array 150. However, it is to be appreciated that themonolithic source array 150 may be a monolithic structure that comprises one or more portions of the applicator 142 (e.g., a dielectric resonating body) and a dielectric plate that faces the interior of thechamber 178. - In an embodiment, the
oscillator module 106 and theamplification module 130 may comprise electrical components that are solid state electrical components. In an embodiment, each of the plurality ofoscillator modules 106 may be communicatively coupled todifferent amplification modules 130. In some embodiments, there may be a 1:1 ratio betweenoscillator modules 106 andamplification modules 130. For example, eachoscillator module 106 may be electrically coupled to asingle amplification module 130. In an embodiment, the plurality ofoscillator modules 106 may generate incoherent electromagnetic radiation. Accordingly, the electromagnetic radiation induced in thechamber 178 will not interact in a manner that results in an undesirable interference pattern. - In an embodiment, each
oscillator module 106 generates high-frequency electromagnetic radiation that is transmitted to theamplification module 130. After processing by theamplification module 130, the electromagnetic radiation is transmitted to theapplicator 142. In an embodiment, theapplicators 142 each emit electromagnetic radiation into thechamber 178. In some embodiments, theapplicators 142 couple the electromagnetic radiation to the processing gasses in thechamber 178 to produce a plasma. - Referring now to
FIG. 2 , a schematic of a solid state high-frequency emission module 105 is shown, in accordance with an embodiment. In an embodiment, the high-frequency emission module 105 comprises anoscillator module 106. Theoscillator module 106 may include avoltage control circuit 210 for providing an input voltage to a voltage controlledoscillator 220 in order to produce high-frequency electromagnetic radiation at a desired frequency. Embodiments may include an input voltage between approximately 1V and 10V DC. The voltage controlledoscillator 220 is an electronic oscillator whose oscillation frequency is controlled by the input voltage. According to an embodiment, the input voltage from thevoltage control circuit 210 results in the voltage controlledoscillator 220 oscillating at a desired frequency. In an embodiment, the high-frequency electromagnetic radiation may have a frequency between approximately 0.1 MHz and 30 MHz. In an embodiment, the high-frequency electromagnetic radiation may have a frequency between approximately 30 MHz and 300 MHz. In an embodiment, the high-frequency electromagnetic radiation may have a frequency between approximately 300 MHz and 1 GHz. In an embodiment, the high-frequency electromagnetic radiation may have a frequency between approximately 1 GHz and 300 GHz. - According to an embodiment, the electromagnetic radiation is transmitted from the voltage controlled
oscillator 220 to anamplification module 130. Theamplification module 130 may include a driver/pre-amplifier 234, and amain power amplifier 236 that are each coupled to apower supply 239. According to an embodiment, theamplification module 130 may operate in a pulse mode. For example, theamplification module 130 may have a duty cycle between 1% and 99%. In a more particular embodiment, theamplification module 130 may have a duty cycle between approximately 15% and 50%. - In an embodiment, the electromagnetic radiation may be transmitted to the
thermal break 249 and theapplicator 142 after being processed by theamplification module 130. However, part of the power transmitted to thethermal break 249 may be reflected back due to the mismatch in the output impedance. Accordingly, some embodiments include adetector module 281 that allows for the level offorward power 283 and reflectedpower 282 to be sensed and fed back to thecontrol circuit module 221. It is to be appreciated that thedetector module 281 may be located at one or more different locations in the system (e.g., between the circulator 238 and the thermal break 249). In an embodiment, thecontrol circuit module 221 interprets theforward power 283 and the reflectedpower 282, and determines the level for thecontrol signal 285 that is communicatively coupled to theoscillator module 106 and the level for thecontrol signal 286 that is communicatively coupled to theamplification module 130. In an embodiment,control signal 285 adjusts theoscillator module 106 to optimize the high-frequency radiation coupled to theamplification module 130. In an embodiment,control signal 286 adjusts theamplification module 130 to optimize the output power coupled to theapplicator 142 through thethermal break 249. In an embodiment, the feedback control of theoscillator module 106 and theamplification module 130, in addition to the tailoring of the impedance matching in thethermal break 249 may allow for the level of the reflected power to be less than approximately 5% of the forward power. In some embodiments, the feedback control of theoscillator module 106 and theamplification module 130 may allow for the level of the reflected power to be less than approximately 2% of the forward power. - Accordingly, embodiments allow for an increased percentage of the forward power to be coupled into the
processing chamber 178, and increases the available power coupled to the plasma. Furthermore, impedance tuning using a feedback control is superior to impedance tuning in typical slot-plate antennas. In slot-plate antennas, the impedance tuning involves moving two dielectric slugs formed in the applicator. This involves mechanical motion of two separate components in the applicator, which increases the complexity of the applicator. Furthermore, the mechanical motion may not be as precise as the change in frequency that may be provided by a voltage controlledoscillator 220. - Referring now to
FIG. 3A , a perspective view illustration of amonolithic source array 350 is shown, in accordance with an embodiment. In an embodiment, themonolithic source array 350 comprises adielectric plate 360 and a plurality ofprotrusions 366 that extend up from thedielectric plate 360. In an embodiment, thedielectric plate 360 and the plurality ofprotrusions 366 are a monolithic structure. That is, there is no physical interface between a bottom of theprotrusions 366 and afirst surface 361 of thedielectric plate 360. As used herein, a “physical interface” refers to a first surface of a first discrete body contacting a second surface of a second discrete body. - Each of the
protrusions 366 are a portion of theapplicator 142 used to inject high-frequency electromagnetic radiation into aprocessing chamber 178. Particularly, theprotrusions 366 function as the resonating body of theapplicator 142. Other components of the applicator 142 (e.g., the monopole antenna and the grounded housing surrounding the resonating body) may be discrete components from themonolithic source array 350 and are described in greater detail below. - The
dielectric plate 360 comprises afirst surface 361 and asecond surface 362 opposite from thefirst surface 361. The dielectric plate has a first thickness T1 between thefirst surface 361 and thesecond surface 362. In an embodiment, the first thickness T1 is less than approximately 30 mm, less than approximately 20 mm, less than approximately 10 mm, or less than approximately 5 mm. In a particular embodiment, the first thickness T1 is approximately 3 mm. Decreasing the first thickness T1 provides improved coupling of high-frequency electromagnetic radiation into the processing chamber. However, increases to the first thickness T1 may provide improved mechanical support and decreases the probability of a mechanical failure (e.g., thedielectric plate 360 cracking). In the illustrated embodiment, thedielectric plate 360 is shown with a substantially circular shape. However, it is to be appreciated that thedielectric plate 360 may have any desired shape (e.g., polygonal, elliptical, wedge shaped, or the like). - The plurality of
protrusions 366 extend up from thefirst surface 361 of thedielectric plate 360. For example, sidewalls 364 are oriented substantially perpendicular to thefirst surface 361 of thedielectric plate 360. Theprotrusions 366 further comprise athird surface 363. Thethird surface 363 may be substantially parallel to thefirst surface 361. In an embodiment, ahole 365 is disposed into thethird surface 363 of each protrusion. Thehole 365 is sized to accommodate a monopole antenna of theapplicator 142. In an embodiment, thehole 365 is positioned at the axial center of theprotrusion 366. - In an embodiment, the
protrusions 366 may have a second thickness T2 between thefirst surface 361 and thethird surface 363. In an embodiment, the second thickness T2 may be chosen to provide a resonating body for the applicator. For example, the dimensions of theprotrusions 366 may depend on at least the material of the monolithic source array, the thickness of thedielectric plate 360, the desired operating frequency, among other considerations. Embodiments may generally include decreasing the second thickness T2 of the protrusion as the first thickness T1 of the dielectric plate increases - In an embodiment, the plurality of
protrusions 366 are arranged in an array. In the illustrated embodiment, the plurality ofprotrusions 366 are arranged in a close-packed array, though other packing arrangements are possible. Furthermore, while nineteenprotrusions 366 are shown, it is to be appreciated that embodiments may include one ormore protrusions 366 extending away from thefirst surface 361 of thedielectric plate 360. In the illustrated embodiment, each of theprotrusions 366 have the same dimensions (e.g., thickness T2 and width W). In other embodiments, the dimensions of theprotrusions 366 may be non-uniform. - In an embodiment, the
monolithic source array 350 comprises a dielectric material. For example, themonolithic source array 350 may be a ceramic material. In an embodiment, one suitable ceramic material that may be used for themonolithic source array 350 is Al2O3. The monolithic structure may be fabricated from a single block of material. In other embodiments, a rough shape of themonolithic source array 350 may be formed with a molding process, and subsequently machined to provide the final structure with the desired dimensions. For example, green state machining and firing may be used to provide the desired shape of themonolithic source array 350. - Referring now to
FIG. 3B , a cross-sectional illustration of themonolithic source array 350 inFIG. 3A along line B-B′ is shown, in accordance with an embodiment. As shown, thesidewall surface 364 of theprotrusions 366 intersects with thefirst surface 361 of thedielectric plate 360. That is, the bottom ofprotrusion 366 seamlessly transitions into thedielectric plate 360 without there being a physical interface between theprotrusion 366 and thedielectric plate 360. -
FIG. 3B more clearly illustrates the depth D of theholes 365 into thethird surfaces 363 of theprotrusions 366. As shown, the depth D of theholes 365 is less than the second thickness T2 of theprotrusions 366. In such embodiments, theholes 365 do not extend down into thedielectric plate 360 of themonolithic source array 350. In other embodiments, (e.g., for larger first thicknesses T1) theholes 365 may have a depth D that is greater than the second thickness T2 of theprotrusions 366 and extend into thedielectric plate 360 of themonolithic source array 350. - Referring now to
FIG. 3C , a cross-sectional illustration of amonolithic source array 350 is shown, in accordance with an additional embodiment. Themonolithic source array 350 inFIG. 3C may be substantially similar to themonolithic source array 350 inFIG. 3B , with the exception that adielectric layer 367 is disposed over one or more surfaces of themonolithic source array 350. In the illustrated embodiment, thedielectric layer 367 is disposed over thesecond surface 362 of thedielectric plate 360. However, adielectric layer 367 may be disposed over any number of surfaces of themonolithic source array 350. For example,dielectric layers 367 may be disposed over thefirst surface 361, thethird surfaces 363, the sidewall surfaces 364, or within theholes 365. In an embodiment, differentdielectric layers 367 may be disposed over different surfaces. For example, a firstdielectric layer 367 with a first composition may be disposed over thefirst surface 361, and asecond dielectric layer 367 with a second composition may be disposed over thesecond surface 362. - In some embodiments, the
dielectric layer 367 may be a chemically inert dielectric layer in order to provide protection to portions of themonolithic source array 350 that would otherwise be exposed to the chamber interior. For example, when left uncovered, portions of thesecond surface 362 may be exposed to a plasma environment and be more susceptible to erosion or other degradation. In an embodiment, a chemicallyinert dielectric layer 367 may comprise one or more of Al2O3, SiO2, SiN, a transition metal oxide (e.g., Y2O3, HfO2, or La2O3), a transition metal nitride, and combinations thereof. Such chemically inertdielectric layers 367 may further comprise fluorine (F). Embodiments may also include inertdielectric layers 367 that include compositions comprising groups of elements (e.g., aluminum-oxygen-nitrogen (Al—O—N), aluminum-hafnium-oxygen-fluorine (Al—Hf—O—F), yttrium-oxygen-fluorine-nitrogen (Y—O—F—N), or hafnium-zirconium-oxygen-fluorine-nitrogen (Hf—Zr—O—F—N)). - In an embodiment, inert
dielectric layers 367 may be deposited over themonolithic source array 350 with any suitable deposition process. For example, the inertdielectric layers 367 may be applied using plasma spray coating, thermal spray coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), sputtering, atomic layer deposition (ALD), or plasma-enhanced ALD (PE-ALD). - Referring now to
FIG. 3D , a cross-sectional illustration of themonolithic source array 350 inFIG. 3A along line B-B′ is shown, in accordance with an embodiment. Themonolithic source array 350 inFIG. 3D may be substantially similar to themonolithic source array 350 inFIG. 3B , with the exception that aconductive layer 391 is disposed over one or more surfaces. For example, theconductive layer 391 may be disposed over one or more of thefirst surface 361, thethird surface 363, and thesidewalls 364 of theprotrusions 366. During operation, theconductive layer 391 may be grounded. In some embodiments, thethird surface 363 may not be entirely covered by theconductive layer 391. For example, portions of thethird surface 363 proximate to theholes 365 may be exposed to reduce the probability of arcing between theconductive layer 391 and the antenna (not shown) that is inserted into thehole 365. In an embodiment, theconductive layer 391 may be any suitable conductive layer (e.g., aluminum, titanium, etc.). - Referring now to
FIG. 3D , a plan view illustration of amonolithic source array 350 is shown in accordance with an additional embodiment. Themonolithic source array 350 is substantially similar to themonolithic source array 350 inFIG. 3A , with the exception that theprotrusions 366 have a different cross section as viewed along a plane parallel to thefirst surface 361. InFIG. 3D , the outlines of theprotrusions 366 are substantially hexagonal in shape, as opposed to being circular inFIG. 3A . While examples of circular and hexagonal cross-sections are shown, it is to be appreciated that theprotrusions 366 may comprise many different cross-sections. For example, the cross-section of theprotrusions 366 may have any shape that is centrally symmetric. - Referring now to
FIG. 4A , an exploded view of anassembly 470 is shown, in accordance with an embodiment. In an embodiment, theassembly 470 comprises amonolithic source array 450 and ahousing 472. Themonolithic source array 450 may be substantially similar to themonolithic source arrays 350 described above. For example, themonolithic source array 450 may comprise adielectric plate 460 and a plurality ofprotrusions 466 that extend up from thedielectric plate 460. - In an embodiment, the
housing 472 comprises aconductive body 473. For example, theconductive body 473 may be aluminum or the like. The housing comprises a plurality ofopenings 474. Theopenings 474 may pass entirely through a thickness of theconductive body 473. Theopenings 474 may be sized to receive theprotrusions 466. For example, as thehousing 472 is displaced towards the monolithic source array 450 (as indicated by the arrow) theprotrusions 466 will be inserted into theopenings 474. - In the illustrated embodiment, the
housing 472 is shown as a singleconductive body 473. However, it is to be appreciated that thehousing 472 may comprise one or more discrete conductive components. The discrete components may be individually grounded, or the discrete components may be joined mechanically or by any form of metallic bonding, to form a single electricallyconductive body 473. - Referring now to
FIG. 4B , a cross-sectional illustration of theassembly 470 is shown, in accordance with an embodiment. As shown, theconductive body 473 of thehousing 472 is supported by thefirst surface 461 of thedielectric plate 460. In the illustrated embodiment, theconductive body 473 is directly supported by thefirst surface 461, but it is to be appreciated that a thermal interface material or the like may separate theconductive body 473 from thefirst surface 461. In an embodiment, thesecond surface 462 of thedielectric plate 460 faces away from thehousing 472. - In an embodiment, the
housing 472 has a third thickness T3. The third thickness T3 of thehousing 472 may be similar to the second thickness T2 of theprotrusions 466. In other embodiments, the third thickness T3 of thehousing 472 may be larger or smaller than the second thickness T2 of theprotrusions 466. - In the illustrated embodiment, the
openings 474 have an opening diameter O that is greater than the width W of theprotrusions 466. The difference in the dimensions results in agap 475 between sidewalls of theprotrusions 466 and the sidewalls of theconductive body 473. Thegap 475 may be suitable to allow for some degree of thermal expansion while still maintaining a secure fit between themonolithic source array 450 and thehousing 472. - As will be shown in more detail below, different surfaces of the
assembly 470 will be exposed to different environments. For example, thesecond surface 462 is configured to be exposed to a chamber volume. The opposite side of theassembly 470 is configured to be exposed to the atmosphere or other environments with pressures higher than that of the chamber volume during operation (e.g., approximately 1.0 atm or higher). Accordingly, thesmall gaps 475 between theconductive body 473 and theprotrusions 466 will not experience a low pressure environment suitable for igniting a plasma. - Referring now to
FIG. 4C , a cross-sectional illustration of anapplicator 442 that is integrated with theassembly 470 is shown, in accordance with an embodiment. In an embodiment, theapplicator 442 comprises theprotrusion 466, theconductive body 473 surrounding theprotrusion 466, and themonopole antenna 468 extending into thehole 465. In an embodiment, aconductive plate 476 may also cover a top surface of theprotrusion 466. Accordingly, portions of theassembly 470 may be used as components of theapplicator 442. For example, theprotrusion 466 is part of themonolithic source array 450 and functions as the dielectric cavity resonator of theapplicator 442, and theconductive body 473 is part of thehousing 472 and functions as the ground plane surrounding dielectric cavity resonator for theapplicator 442. - The
monopole antenna 468 may be surrounded by shielding 469 above theassembly 470, and themonopole antenna 468 may be electrically coupled to a high-frequency power source (e.g., a high-frequency emission module 105 or the like). Themonopole antenna 468 passes throughconductive plate 476 and extends into thehole 465. In some embodiments, thehole 465 extends deeper into theprotrusion 466 than themonopole antenna 468. Additionally, the width of thehole 465 may be greater than the width of themonopole antenna 468. Accordingly, tolerances for thermal expansion are provided in some embodiments in order to prevent damage to themonolithic source array 450. Also shown inFIG. 4C is athermal interface material 477 between a bottom surface of theconductive body 473 and thefirst surface 461 of thedielectric plate 460. Athermal interface material 477 may improve heat transfer between theconductive body 473 and thedielectric plate 460 when active heating or cooling is implemented in theassembly 470. In other embodiments, thethermal interface material 477 may be a bonding layer, or athermal interface material 477 and a bonding layer. - Referring now to
FIG. 5 , a cross-sectional illustration of aprocessing tool 500 that includes anassembly 570 is shown, in accordance with an embodiment. In an embodiment, the processing tool comprises achamber 578 that is sealed by anassembly 570. For example, theassembly 570 may rest against one or more o-rings 581 to provide a vacuum seal to aninterior volume 583 of thechamber 578. In other embodiments, theassembly 570 may interface with thechamber 578. That is, theassembly 570 may be part of a lid that seals thechamber 578. In an embodiment, theprocessing tool 500 may comprise a plurality of processing volumes (which may be fluidically coupled together), with each processing volume having adifferent assembly 570. In an embodiment, achuck 579 or the like may support a workpiece 574 (e.g., wafer, substrate, etc.). - In an embodiment, the
assembly 570 may be substantially similar to theassemblies 470 described above. For example, theassembly 570 comprises amonolithic source array 550 and ahousing 572. Themonolithic source array 550 may comprise adielectric plate 560 and a plurality ofprotrusions 566 extending up from afirst surface 561 of thedielectric plate 560. Asecond surface 562 of thedielectric plate 560 may be exposed to theinterior volume 583 of thechamber 578. Thehousing 572 may having openings sized to receive theprotrusions 566. In someembodiments gaps 575 may be provided between theprotrusions 566 and theconductive body 573 of thehousing 572 to allow for thermal expansion. In an embodiment,monopole antennas 568 may extend intoholes 565 in theprotrusions 566. Themonopole antennas 568 may pass through atop plate 576 over thehousing 572 and theprotrusions 566. - In an embodiment, the
chamber volume 583 may be suitable for striking aplasma 582. That is, thechamber volume 583 may be a vacuum chamber. In an embodiment, only thesecond surface 562 is exposed to the chamber volume 583 (if it is not covered by a dielectric layer, such as those described above). The opposite surfaces are outside of thechamber volume 583 and, therefore, do not experience the low pressure conditions needed to strike aplasma 582. Accordingly, even when there are high electric fields in thegaps 575 between the sidewalls of theprotrusions 566 and theconductive body 573, there is no plasma generated. - Referring now to
FIG. 6 , a block diagram of anexemplary computer system 660 of a processing tool is illustrated in accordance with an embodiment. In an embodiment,computer system 660 is coupled to and controls processing in the processing tool.Computer system 660 may be connected (e.g., networked) to other machines in a Local Area Network (LAN), an intranet, an extranet, or the Internet.Computer system 660 may operate in the capacity of a server or a client machine in a client-server network environment, or as a peer machine in a peer-to-peer (or distributed) network environment.Computer system 660 may be a personal computer (PC), a tablet PC, a set-top box (STB), a Personal Digital Assistant (PDA), a cellular telephone, a web appliance, a server, a network router, switch or bridge, or any machine capable of executing a set of instructions (sequential or otherwise) that specify actions to be taken by that machine. Further, while only a single machine is illustrated forcomputer system 660, the term “machine” shall also be taken to include any collection of machines (e.g., computers) that individually or jointly execute a set (or multiple sets) of instructions to perform any one or more of the methodologies described herein. -
Computer system 660 may include a computer program product, orsoftware 622, having a non-transitory machine-readable medium having stored thereon instructions, which may be used to program computer system 660 (or other electronic devices) to perform a process according to embodiments. A machine-readable medium includes any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computer). For example, a machine-readable (e.g., computer-readable) medium includes a machine (e.g., a computer) readable storage medium (e.g., read only memory (“ROM”), random access memory (“RAM”), magnetic disk storage media, optical storage media, flash memory devices, etc.), a machine (e.g., computer) readable transmission medium (electrical, optical, acoustical or other form of propagated signals (e.g., infrared signals, digital signals, etc.)), etc. - In an embodiment,
computer system 660 includes asystem processor 602, a main memory 604 (e.g., read-only memory (ROM), flash memory, dynamic random access memory (DRAM) such as synchronous DRAM (SDRAM) or Rambus DRAM (RDRAM), etc.), a static memory 606 (e.g., flash memory, static random access memory (SRAM), etc.), and a secondary memory 618 (e.g., a data storage device), which communicate with each other via abus 630. -
System processor 602 represents one or more general-purpose processing devices such as a microsystem processor, central processing unit, or the like. More particularly, the system processor may be a complex instruction set computing (CISC) microsystem processor, reduced instruction set computing (RISC) microsystem processor, very long instruction word (VLIW) microsystem processor, a system processor implementing other instruction sets, or system processors implementing a combination of instruction sets.System processor 602 may also be one or more special-purpose processing devices such as an application specific integrated circuit (ASIC), a field programmable gate array (FPGA), a digital signal system processor (DSP), network system processor, or the like.System processor 602 is configured to execute theprocessing logic 626 for performing the operations described herein. - The
computer system 660 may further include a systemnetwork interface device 608 for communicating with other devices or machines. Thecomputer system 660 may also include a video display unit 610 (e.g., a liquid crystal display (LCD), a light emitting diode display (LED), or a cathode ray tube (CRT)), an alphanumeric input device 612 (e.g., a keyboard), a cursor control device 614 (e.g., a mouse), and a signal generation device 616 (e.g., a speaker). - The
secondary memory 618 may include a machine-accessible storage medium 632 (or more specifically a computer-readable storage medium) on which is stored one or more sets of instructions (e.g., software 622) embodying any one or more of the methodologies or functions described herein. Thesoftware 622 may also reside, completely or at least partially, within themain memory 604 and/or within thesystem processor 602 during execution thereof by thecomputer system 660, themain memory 604 and thesystem processor 602 also constituting machine-readable storage media. Thesoftware 622 may further be transmitted or received over anetwork 620 via the systemnetwork interface device 608. In an embodiment, thenetwork interface device 608 may operate using RF coupling, optical coupling, acoustic coupling, or inductive coupling. - While the machine-
accessible storage medium 632 is shown in an exemplary embodiment to be a single medium, the term “machine-readable storage medium” should be taken to include a single medium or multiple media (e.g., a centralized or distributed database, and/or associated caches and servers) that store the one or more sets of instructions. The term “machine-readable storage medium” shall also be taken to include any medium that is capable of storing or encoding a set of instructions for execution by the machine and that cause the machine to perform any one or more of the methodologies. The term “machine-readable storage medium” shall accordingly be taken to include, but not be limited to, solid-state memories, and optical and magnetic media. - In the foregoing specification, specific exemplary embodiments have been described. It will be evident that various modifications may be made thereto without departing from the scope of the following claims. The specification and drawings are, accordingly, to be regarded in an illustrative sense rather than a restrictive sense.
Claims (20)
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US16/586,462 US20210098230A1 (en) | 2019-09-27 | 2019-09-27 | Monolithic modular high-frequency plasma source |
CN202080065164.6A CN114424318B (en) | 2019-09-27 | 2020-09-15 | Monolithic modular high frequency plasma source |
JP2022518721A JP7336591B2 (en) | 2019-09-27 | 2020-09-15 | Monolithic Modular High Frequency Plasma Source |
KR1020227013849A KR20220065873A (en) | 2019-09-27 | 2020-09-15 | Monolithic Modular High Frequency Plasma Source |
PCT/US2020/050900 WO2021061452A1 (en) | 2019-09-27 | 2020-09-15 | Monolithic modular high-frequency plasma source |
EP20869825.8A EP4035198A4 (en) | 2019-09-27 | 2020-09-15 | Monolithic modular high-frequency plasma source |
TW109132662A TW202113918A (en) | 2019-09-27 | 2020-09-22 | Monolithic modular high-frequency plasma source |
US17/960,535 US20230026546A1 (en) | 2019-09-27 | 2022-10-05 | Monolithic modular high-frequency plasma source |
JP2023133781A JP2023166424A (en) | 2019-09-27 | 2023-08-21 | Monolithic modular high-frequency plasma source |
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US20210098231A1 (en) * | 2019-09-27 | 2021-04-01 | Applied Materials, Inc. | Monolithic modular microwave source with integrated process gas distribution |
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CN114424318B (en) | 2024-03-12 |
JP2022549828A (en) | 2022-11-29 |
JP7336591B2 (en) | 2023-08-31 |
US20230026546A1 (en) | 2023-01-26 |
WO2021061452A1 (en) | 2021-04-01 |
CN114424318A (en) | 2022-04-29 |
TW202113918A (en) | 2021-04-01 |
EP4035198A1 (en) | 2022-08-03 |
KR20220065873A (en) | 2022-05-20 |
JP2023166424A (en) | 2023-11-21 |
EP4035198A4 (en) | 2023-09-20 |
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