200917910 九、發明說明 【發明所屬之技術領域】 本發明是有關使用於半導體元件、平板顯示器、及太 陽電池等的製造之電漿處理裝置，特別是成膜面積大時， 照樣可使成膜速度提升，且可抑止粒子的發生之電漿處理 裝置。 【先前技術】 現今，半導體元件、太陽電池、或液晶顯示面板或電 漿顯示器面板等的平板顯示器的製造時，蝕刻、濺鍍或 CVD(Chemical Vapor Deposition)等會被利用，進行精度 高的加工處理。 在半導體元件的製造中，被施以使用電漿的處理（電 漿處理）的矽晶圓、及使用於平板顯示器的玻璃基板，一 心一意追尋大型化。對應於此，實施電漿處理的處理裝置 的減壓處理室（反應室）亦大型化，在此減壓處理室內，使 對形成於半導體元件或平板顯示器等的各種基板的膜的成 形精度造成大的影響的反應性電漿中的反應活性種（自由 基）或離子均一地生成，而進行均一的電漿處理的必要性 會増大。 作爲製造大型的薄膜太陽電池的裝置，例如可使用 E C R ( E1 e c t r ο n C y c 1 〇 t r ο n R e s ο n a n c e)電發 C V D 裝置或 ICP(Inductively Coupled Plasma)電漿裝置。 然而，爲了使取得lmxlm程度的大面積的蒸鍍面的 -5- 200917910 電漿產生，例如在ECR電漿CVD裝置中，使用於粒子迴 旋加速器的磁場產生用的線圈及放射電波用的天線的配置 會互相干渉，實現困難。 於是，在電漿CVD裝置中，用以使取得lmxlm程度 的大面積的蒸鍍面的電漿產生的天線被提案（專利文獻 1)。 在專利文獻1中是揭示有由陣列天線所構成的電漿生 成用天線，該陣列天線是使由表面被電介體覆蓋的柱狀導 電體所構成的複數個天線元件交替地顛倒給電方向而配置 成平行且平面狀。藉由使用此專利文獻1的電漿生成用天 線，可使電磁波的空間分布一樣的電漿產生，可取得 1 m X 1 m程度的大面積的蒸鍍面。 其次，說明有關揭示於專利文獻1之具備陣列天線的 以往電漿CVD裝置。 在此，圖6是表示以往的電漿CVD裝置的構成。 圖6所示的以往電漿CVD裝置100是具有：控制部 102、分配器104、阻抗整合器106及長方體狀的反應容 器108。此控制部102是在於控制電漿CVD裝置100的 各機器。 在反應容器108形成有導入口 110，在該導入口 u〇 經由氣體供給管11 2來連接成膜氣體供給部i i 4。此成膜 氣體供給部1 1 4是例如在形成Si02膜時，供給氧氣體及 TEOS(Tetra-Ethy卜Ortho-Silicate(矽酸四乙酯））氣體（以下 稱爲TE0S氣體）作爲原料氣體G。 200917910 並且，在反應容器108的下壁l〇8b形成有排氣口 1 1 6。在該排氣口 1 1 6經由排氣管1 1 8來連接用以使反應 容器108內形成真空的真空排氣部120。並且，在反應容 器1 08中設有測定內部壓力的壓力感測器（未圖示）。 而且，在反應容器108的內部，從上壁l〇8a側依序 設有：氣體放射板1 22、由複數的天線元件1 24所構成的 天線陣列126、及基板平台128。在該基板平台128的表 面128a載置基板130。 並且，阻抗整合器106是被連接至天線元件124 ’用 以改正在電漿生成時的天線元件1 2 4的負荷變化所產生的 阻抗不整合。 氣體放射板122是使由成膜氣體供給部1 14導入的原 料氣體G擴散於廣面積者，具有跨越反應容器1 〇 8的內 部全域的大小。藉由此氣體放射板1 22，反應容器1 08內 會被隔成2個的空間。氣體放射板122的上壁108a側的 空間爲氣體分散室132，氣體放射板122的下壁108b側 的空間爲反應室1 3 4。 而且，氣體放射板122是形成有複數個的貫通孔 122a。此氣體放射板122是以金屬形成，且被接地。 另外，在基板平台1 2 8設有加熱器（未圖示），此加熱 器是藉由控制部102來控制。 在以往的電漿CVD裝置1 00中，於玻璃基板或矽晶 圓等的基板130的表面130a，例如形成Si02膜時，藉由 真空排氣部12〇來使反應容器108內的壓力成爲IPa〜數 -7- 200917910 1 〇〇Pa程度的狀態，且對天線元件1 24供給高頻信 此在天線元件1 24的周圍放射電磁波。 此時，由成膜氣體供給部1 1 4供給原料氣體 體分散室132，使該原料氣體G從貫通孔122a以 流速來流入反應室134。然後，原料氣體G會電離 生空間密度均一的電漿。藉此，在基板130的表ί 形成Si02膜。 如此，在以往的電漿CVD裝置1〇〇中，可使 電漿產生，因此即使是lmxlm程度大的面積，還 基板130的表面130a形成Si02膜。 [專利文獻1]特開2003 -865 8 1號公報 【發明內容】 (發明所欲解決的課題） 如上述般，以往的電漿CVD裝置100即使 積，還是可對基板130的表面130a形成Si 02膜。 所發生的電槳會形成達到天線元件1 24爲止的狀態 在電漿中配置有天線元件1 24的狀態，在天線元件 表面124a附近，電場分布極度高。因此，在天 124的表面l24a附近，原料氣體G會因電漿而 解。藉此，例如在基板130的表面130a形成Si02 Si〇2等的反應生成物會因電漿而被過剩生成，未能 膜，附著甚至堆積於天線元件124的表面124a。 寄與成膜的Si〇2的比例會減少，有成膜速度降低 號，藉 G至氣 一定的 ，而產 S 130a 均一的 是可在 是的面 然而， ，亦即 124的 線元件 過剩分 膜時， 寄與成 如此， 的問題 200917910 點。 而且，堆積於天線元件124的表面124a白 生成物）會形成粒子，亦有導致處理室134內 的問題點。因爲該粒子的増加，所被形成的膜 降低之虞。 本發明的目的是在於提供一種可解除上述 問題點，即使成膜面積大時，照樣可使成膜速 可抑止粒子的發生之電槳處理裝置。 (用以解決課題的手段） 爲了達成上述目的，本發明之電漿處理裝 第1原料氣體及第2原料氣體來對處理對象基 的電漿處理裝置，其特徵係具有： 基板平台，其係上述處理對象基板會被配 電漿生成部，其係設於上述基板平台的上 電介體覆蓋表面的棒狀導體所構成的天線元件 基板平台的表面大致平行的平面取複數所定的 成的天線陣列來生成電漿； 氣體放射部，其係以能夠覆蓋上述電漿生 設置，具備設於上述天線陣列的上方之具有複 射口的氣體放射板； 第1氣體供給部，其係以能夠從上述氣體 數的氣體放射口的一部份來朝向上述基板平台 而通過上述天線元件的表面之方式供給第1原 J Si〇2(反應 的粒子増加 的膜質會有 以往技術的 度提升，且 置，係使用 板實施處理 置於表面； 方，使用以 對於與上述 間隙而配列 成部的方式 數的氣體放 放射板的複 的表面放射 料氣體；及 -9- 200917910 第2氣體供給部，其係以能夠從上述氣體放射板的複 數的氣體放射口的其他部份來朝向上述基板平台的表面放 射而通過上述天線元件的間隙之方式供給第2原料氣體； 又，上述電漿生成部’係對上述電漿生成部供給上述 第1原料氣體及上述第2原料氣體的狀態下，利用上述天 線陣列來生成電漿， 上述第1原料氣體’係被暴露於上述天線元件時，不 產生附著物，或附著量比上述第2原料氣體更少。 此刻，最好上述氣體放射板的複數的氣體放射口，係 以能夠對上述電漿生成部開口之方式形成，上述氣體放射 口之中，由垂直於上述基板平台的上述表面的方向來看上 述氣體放射板時，以能夠連接至與上述天線元件的位置整 合的第1領域所形成的全部氣體放射口之方式設置形成流 路的隔壁，藉由此隔壁來隔離上述第1領域所形成的全部 氣體放射口與除此以外的領域所形成的其他氣體放射口， 來自上述第1氣體供給部的第1原料氣體，係經由上 述流路來從上述第1領域所形成的全部氣體放射口放射， 藉此，第1原料氣體係通過上述天線元件的表面，朝向上 述基板平台的表面供給， 來自上述第2氣體供給部的第2原料氣體，係從上述 其他的氣體放射口放射，藉此，第2原料氣體係通過上述 天線元件的間隙，朝向上述基板平台的表面供給。 或者，最好上述氣體放射板的複數的氣體放射口，係 以能夠對上述電漿生成部開口之方式形成，上述氣體放射 -10- 200917910 口之中，由垂直於上述基板平台的上述表面的方向來看上 述氣體放射板時’以能夠連接至與上述天線元件的間隙的 領域整合的第2領域所形成的全部氣體放射口之方式設置 形成流路的隔壁’藉由此隔壁來隔離上述第2領域所形成 的全部氣體放射口與除此以外的領域所形成的其他氣體放 射口， 來自上述第1氣體供給部的第1原料氣體，係從上述 其他的氣體放射口放射’藉此，第1原料氣體係通過上述 天線元件的表面，朝向上述基板平台的表面供給， 來自上述第2氣體供給部的第2原料氣體，係經由上 述流路’從上述第2領域所形成的全部氣體放射口放射， 藉此’第2原料氣體係通過上述天線元件的間隙，朝向上 述基板平台的表面供給= 另外’最好上述第1原料氣體是氧氣體，上述第2原 料氣體是TEOS氣體。 又’本發明之電漿處理裝置，係使用第1原料氣體及 第2原料氣體來對處理對象基板實施處理的電漿處理裝 置，其特徵係具有： 基板平台，其係上述處理對象基板會被配置於表面； 電漿生成部，其係設於上述基板平台的上方，具備以 電介體覆蓋表面的棒狀導體所構成的天線元件對於與上述 基板平台的表面大致平行的平面取複數所定的間隙而配列 成的天線陣列； 氣體放射部，其係以能夠覆蓋上述電漿生成部的方式 -11 - 200917910 設置，具備設於上述天線陣列的上方’且具有複數的氣體 放射口的氣體放射板； 第2氣體放出部，其係設於上述電漿生成部的上述天 線元件的各間隙，具備複數個中空的第2氣體放出構件， 該第2氣體放出構件係形成有複數個以能夠面向上述基板 平台的方式開口的孔； 第1氣體供給部，其係從上述氣體放射板來朝向上述 基板平台的表面供給上述第1原料氣體；及 第2氣體供給部，其係使上述第2原料氣體經由上述 第2氣體放出部來朝向上述基板平台的表面供給， 又，上述電漿生成部，係於供給上述第1原料氣體及 上述第2原料氣體的狀態下，利用上述天線陣列來生成電 漿， 上述第1原料氣體，係被暴露於上述天線元件時，不 產生附著物，或附著量比上述第2原料氣體更少。 另外，最好上述第1原料氣體是氧氣體，上述第2原 料氣體是TEOS氣體。 又，本發明之電漿處理裝置，係使用原料氣體來對處 理對象基板實施處理的電漿處理裝置，其特徵係具有： 基板平台，其係上述處理對象基板會被配置於表面； 電漿生成部，其係設於上述基板平台的上方，使用以 電介體覆蓋表面的棒狀導體所構成的天線元件對於與上述 基板平台的表面大致平行的平面取複數所定的間隙而配列 成的天線陣列來生成電漿； -12- 200917910 氣體放射部，其係以能夠覆蓋上述電漿生成部的方式 設置，具備設於上述天線陣列的上方的氣體放射板； 第1氣體供給部，其係以能夠從上述氣體放射部朝向 上述基板平台的表面來放射第1原料氣體及第2原料氣體 的方式，供給上述第1原料氣體及上述第2原料氣體；及 第3氣體供給部，其係以能夠從上述氣體放射部朝向 上述基板平台的表面來放射第3氣體的方式，供給上述第 3氣體； 在上述氣體放射板形成有複數個對上述電漿生成部開 口的氣體放出口，上述氣體放射板的上述氣體放射口之 中，由垂直於上述基板平台的上述表面的方向來看上述氣 體放射板時，以能夠連接至與上述天線元件的位置整合的 第1領域所形成的全部氣體放射口之方式設置形成流路的 隔壁，藉由此隔壁來隔離上述第1領域所形成的全部氣體 放射口與除此以外的領域所形成的其他氣體放射口， 來自上述第3氣體供給部的上述第3氣體，係經由上 述流路，從上述第1領域所形成的全部氣體放射口放射， 藉此，上述第3氣體係通過上述天線元件的表面，朝向上 述基板平台的表面供給， 來自上述第1氣體供給部的上述第1原料氣體及上述 第2原料氣體，係從上述其他的氣體放射口放射，藉此， 上述第1原料氣體及上述第2原料氣體係通過上述天線元 件的間隙，朝向上述基板平台的表面供給， 上述電漿生成部，係於供給上述第1原料氣體、上述 -13- 200917910 第2原料氣體及上述第3氣體的狀態下，利用上述天線陣 列來生成電漿。 另外，最好上述原料氣體是氧氣體及TEOS氣體的混 合氣體，上述第3氣體是惰性氣體。 [發明的效果] 若根據本發明的電漿處理裝置，則會在通過天線元件 的表面，往基板平台的表面供給第1原料氣體，通過天線 元件的間隙，往基板平台的表面供給第2原料氣體的狀態 下，利用天線陣列來生成電漿，藉此即使因爲第1原料氣 體及第2原料氣體而產生反應生成物，還是會因爲在天線 元件的周圍供給第1原料氣體，所以在天線元件附著或堆 積反應生成物的情況會被抑止。又，即使第2原料氣體爲 含對天線元件容易附著的成份者，還是會因爲在天線元件 的周圍供給第1原料氣體，所以附著的情況會被抑止。因 此，粒子的發生會被抑止。 又，由於在天線元件附著或堆積反應生成物的情況會 被抑止，因此第1原料氣體及第2原料氣體的利用效率會 變高’成膜速度會提升。基於該等的因素，即使成膜面積 大時’還是可使成膜速度提升，且可抑止粒子的發生。 又’若根據本發明的電漿處理裝置，則會在通過天線 元件的表面’往基板平台的表面供給與原料氣體相異的第 3氣體，通過天線元件的間隙，往基板平台的表面供給原 料氣體的狀態下，利用天線陣列來生成電漿，藉此因爲在 -14- 200917910 天線元件的周圍供給第3氣體，所以在天線元件附著或堆 積反應生成物的情況會被抑止。因此，粒子的發生會被抑 止。而且，在天線元件附著或堆積反應生成物的情況會被 抑止，因此原料氣體的利用效率會變高，成膜速度會提 升。基於該等的因素，即使成膜面積大時，還是可使成膜 速度提升，且可抑止粒子的發生。 【實施方式】 以下，根據圖面所示的適宜實施形態來詳細說明本發 明的電漿處理裝置。 圖1是表示本發明的電漿處理裝置的第1實施形態的 電漿CVD裝置的構成圖。 本實施形態的圖1所示的電漿CVD裝置1 〇(以下稱爲 CVD裝置1〇)是以使用氧氣體Gf作爲第1原料氣體（活性 種氣體），使用TEOS氣體Gs作爲第2原料氣體，對玻璃 基板或矽晶圓等的基板（處理對象基板）36的表面36a形成 Si〇2膜爲例來進行説明。另外，在本發明的電漿處理裝置 中，形成於基板3 6的膜並非限於S i Ο 2膜。 圖1所示的CVD裝置1〇是具有：控制部12、分配 器14、阻抗整合器]6、及長方體狀的反應容器18。此控 制部1 2是如後述控制c V D裝置1 〇的各機器者。並且， 反應容器18是金屬製或合金製，被接地。 在反應容器1 8的上壁1 8a形成有導入口 22。在該導 入口 22連接氣體供給管23。而且，在氣體供給管23連 -15- 200917910 接第2氣體供給部2 8。 此第2氣體供給部28是對反應容器1 8內，例如供給 TEOS氣體Gs(第2原料氣體）。第2氣體供給部28是具 備：例如被充塡液體的TEOS之槽（未圖示）、使液體的 TEOS氣化之氣化部（未圖示）、及調整被氣化的TEOS的 流量之流量調整部（未圖示）。在此第2氣體供給部2 8 中，是藉由氣化部來使液體的TEOS氣化而取得TEOS氣 體Gs(第2原料氣體），藉由流量調整部來調整TEOS氣體 Gs的流量，然後將TEOS氣體Gs供給至反應容器18 內。 並且，在反應容器18的下壁18b形成有排氣口 24。 在該排氣口 24連接排氣管25。而且，在排氣管25連接 真空排氣部27。此真空排氣部27是具有乾式泵及渦輪分 子泵等的真空泵者。並且，在反應容器18設有測定內部 的壓力之壓力感測器（未圖示）。 而且，在反應容器18的內部，從下壁18b側依序設 有載置於表面34a的基板平台34、基板36，在此基板平 台34的上方設有由複數的天線元件32所構成的天線陣列 (電漿生成部）3 0，更在天線陣列3 0的上方’以能夠覆蓋 天線陣列3 0的方式’設有氣體放射部4 0 (氣體放射板 42)。 在此，圖2是表示本實施形態的電漿C V D裝置的天 線陣列的模式平面圖° 如圖2所示，天線陣列3 0是複數的天線兀件3 2會對 -16- 200917910 於與基板平台34的表面34a大致平行的平面（未圖示）互 相平行地設置複數所定的間隙（間）3 3來配列構成者。此天 線陣列3 0是設於氣體放射部4 0下側（下壁1 8 b側）。並 且，天線元件3 2是對於各側壁1 8 c、1 8 d亦設有所定的間 隙3 3。在本發明中，天線元件3 2與各側壁1 8 c、1 8 d的 間隙3 3亦與各天線元件3 2的間隙3 3同様對待。 並且，在天線陣列3 0中，各天線元件3 2是橫跨反應 容器1 8之對向的2個側壁1 8 c及側壁1 8 d來配置。此天 線陣列30(各天線元件32)是對氣體放射部40(參照圖1)的 氣體放射板42(參照圖1)及基板平台34的表面34a(參照 圖1)平行設置。 天線元件32是單極天線，電性絕緣安裝於反應容器 1 8的側壁1 S e、1 8 f所形成的開□部（未圖示）= 在天線陣列3 0中是如圖2所示在與隣接的天線元件 32彼此相反方向從反應容器18內的側壁18e、18f突出， 給電方向形成逆向。該等的天線元件3 2是高頻電流供給 端的側會被連接至阻抗整合器1 6。此阻抗整合器1 6爲匹 配箱。 阻抗整合器1 6是與控制部1 2的高頻電源所發生的高 頻信號的頻率調整一起使用，用以改正在電樂的生成中因 天線元件3 2的負荷變化所產生的阻抗不整合。 各天線元件3 2是形成由電氣傳導率高的導體所構成 的棒狀（亦可爲管狀），以使用的高頻波長的（2n+1)/4倍（n 爲〇或正的整數）的長度作爲單極天線的天線元件的放射 -17- 200917910 長度。 各天線兀件3 2是被收納於由石英等的電介體所構成 的圓筒構件3 7 ’各天線兀件3 2的表面是以石英等的電介 體所覆蓋。如此藉由使用電介體來覆蓋棒狀的導體，可調 整作爲天線兀件32的電容及電感（inductance)。藉此，可 沿著天線元件32的長度方向來使高頻電流有效地傳播， 可使電磁波有效地放射。另外，以下所謂天線元件3 2的 表面，並非意指棒狀的導體的表面，而是圓筒構件37的 表面3 7 a。 在本實施形態中，設置阻抗整合器1 6，更如後述 般，形成於氣體放射部40(氣體放射板42)的金屬膜會被 接地，藉此與形成鏡像關係的電磁波作用，在每個天線元 件3 2形成所定的電磁波。又，由於構成天線陣列3 0的天 線元件32是與隣接的天線元件32給電方向成逆向，因此 在反應室39中電磁波是均一地形成。 在此，如圖1所示，基板平台34是如上述般，在表 面3 4a載置有基板36。在該基板平台34中是使基板平台 3 4的中心與基板3 6的中心一致來載置基板3 6。 並且，在基板平台3 4的內部設有加熱基板3 6的發熱 體（未圖示），更設有被接地的電極板（未圖示）。此發熱體 是被連接至控制部1 2，發熱體的加熱是藉由控制部1 2來 控制。 另外，亦可爲電極板被連接至偏壓電源（未圖不）’藉 由此偏壓電源來對電極板施加所定的偏壓電壓之構成。 -18- 200917910 又，如圖1所示，氣體放射部40是例如在SiC所構 成的氣體放射板42形成有複數個直徑爲0.3〜1.0mm程度 的貫通孔。該等的貫通孔是形成氣體放出口 44。並且， 在氣體放射部40中，在氣體放射板42的表面形成有金屬 膜，且被接地。 在本實施形態中，氣體放射部40的氣體放射板42是 具有橫跨反應容器1 8內部的全域的大小，以能夠覆蓋天 線陣列3 0的方式來設置。藉由此氣體放射部4 〇來將反應 容器1 8內隔成2個的空間，氣體放射部4 0的上壁1 8 a側 的空間爲氣體分散室3 8，氣體放射部4 0的下壁1 8 b側的 空間爲反應室3 9。 此氣體放射部40是使被供給至氣體分散室38的氣體 以廣面積擴散於反應室3 9內。在本實施形態中，氣體放 射部40是使從第2氣體供給部28導入的TEOS氣體Gs 以廣面積擴散於反應室39內。 而且’在氣體放射部40中是藉由隔壁來形成流路 46 ’該流路46是由垂直於基板平台34的表面34a的方向 來看時’用以隔離：形成於和設在下方的天線陣列3 〇的 天線元件32的位置整合的第1領域42a之各氣體放射口 44、與未和天線元件3 2的位置整合.的領域、亦即整合於 天線兀件3 2與天線兀件3 2之間（間隙3 3 )的領域的第2領 域42b、及整合於天線元件32與反應容器1 8的壁面之間 (間隙33)的第2領域42b之各氣體放射口 44。 流路46是被連接（連通）至與天線元件32整合的第 1 -19- 200917910 領域42a中所被形成的全體氣體放射口 44，可經由流路 46來對全體的氣體放射口 44例如供給氧氣體Gf(第1原 料氣體）。 此流路4 6是剖面形狀爲π字形狀的隔壁構件會在氣體 放射板42的表面沿著天線元件3 2所延伸的方向來設置形 成。在流路46連接第1氣體供給部26。 第1氣體供給部26是例如具備氣瓶（未圖示）及流量 調整部（未圖示）者，在此氣瓶中充塡有氧氣體Gf。藉此第 1氣體供給部26，經由流路46來從氣體放射口 44使氧氣 體Gf在天線元件3 2的長度方向的全域，供給至天線元件 32的表面37a的周圍，更被供給至反應室39內。 並且’未與天線元件32的位置整合的第2領域42b 的氣體放射口 44是與氣體分離室3 8及反應室3 9連通， 將供給至氣體分離室38的TEOS氣體Gs供給至反應室 3 9內。 如此’在氣體放射部40中，有關複數的氣體放射口 44中’形成於第1領域42a者是藉由藉由流路46來與形 成於第2領域42b的其他氣體放射口 44隔離。因此，從 形成於第1領域42a的氣體放射口 44是不會放出由第2 氣體供給部2 8所供給的ΤΕ Ο S氣體Gs。因此，在天線元 件32的表面37a的周圍是被供給經由流路46所供給的氧 氣體Gf。所以，藉由氣體放射部40，在天線元件32的表 面3 7a的周圍’不會有被供給TEOS氣體Gs的情況，而 聋被供給氧氣體Gf。 -20- 200917910 另外’經由流路46來從第1氣體供給部26供給的氣 體並非限於氧氣體，只要爲了成膜而被供給的氣體中，在 天線元件32的表面37a不會有附著或堆積的情況者，或 附著或堆積的程度小者即可。 如上述般，本實施形態的氣體放射部40是隔離氧氣 體Gf的供給路，不隔離TEOS氣體Gs的供給路者。 控制部是具有由高頻振盪電路、放大器所構成的高頻 電源（未圖示）及電流‘電壓感測器（未圖示），按照電流·電 壓感測器的檢測信號來進行該高頻電源的振盪頻率的變更 及阻抗整合器1 6的調整者。此控制部1 2是對天線元件 3 2控制共通的高頻信號的頻率，使所有的天線元件3 2接 近阻抗整合的狀態，然後，藉由連接至各天線元件3 2的 阻抗整合器1 6，個別調整各天線元件3 2的阻抗。控制部 12與複數的阻抗整合器16是經由分配器14來連接。並 且，控制部1 2是對天線元件3 2也控制高頻信號的給電。 另外，藉由控制部1 2也控制第1氣體供給部26、第 2氣體供給部2 8及真空排氣部2 7。 藉由此控制部1 2來控制第1氣體供給部26的氧氣體 Gf(第1原料氣體）的供給時機、及流量等。並且，藉由控 制部12來控制第2氣體供給部28的TEOS氣體Gs的供 給時機、及流量等。更可藉由控制部1 2來排除反應容器 18內的原料氣體等，且可將反應容器18內的壓力調整成 所望的壓力。 在本實施形態中，例如Si〇2膜的成膜時，自第i氣 -21 - 200917910 體供給部26導入的TEOS氣體Gs會在反應容器18內從 上壁1 8 a側流至下壁1 8 b側（以下將從上壁1 8 a側往下壁 18b側的方向稱爲「垂直方向」），從排氣口 24排出。另 外，如後述，此TEOS氣體Gs是在至排出的過程中，在 反應容器1 8內被活化，更被激勵而與成爲反應活性種的 氧氣體Gf混合，形成混合氣體。 在本實施形態中是藉由控制部12來使反應容器18內 的壓力利用真空排氣部27成爲IPa〜數lOOPa程度的狀 態，經由流路46來使氧氣體Gf(第1原料氣體）經過天線 元件32的表面37a的周圍來供給，從氣體放射板42的氣 體放射口 44來供給TEOS氣體Gs。更藉由對天線元件32 供給高頻信號來使電磁波放射至天線元件3 2的周圍。藉 此，在反應容器1 8內的天線元件32的附近生成電漿（未 圖示），且從氣體放射部40放射的氧氣體Gf(活性種氣體） 會被激勵而取得氧自由基（反應活性種）。此時，因爲發生 的電漿具有導電性，所以從天線元件3 2放射的電磁波容 易被反射於電漿。因此，電磁波是在天線元件3 2周邊的 局部領域局部存在。如此，在具有複數個由單極天線所構 成的天線元件3 2的天線陣列3 0是電漿會在天線元件3 2 的表面3 7 a附近局部存在形成，在天線元件3 2的表面 3 7a的周圍，電場分布會極度變高。 另外，有關利用如此的天線陣列的電漿生成的原理的 詳細説明是被記載於本案申請人之前案日本特開2003 _ 8 65 8 1號公報。又，利用天線陣列的電漿生成裝置之各天 -22- 200917910 線的詳細阻抗整合方法是被記載於同本案申請人的前案日 本特願2005-014256號說明書。本發明的天線陣列及各天 線的詳細阻抗整合方法，例如只要利用上述各說明書記載 的方法即可。 其次，以S i Ο 2膜爲例來説明有關本實施形態的c V D 裝置1 0的成膜方法。 首先，從第1氣體供給部26使氧氣體Gf(活性種氣 體）以一定流量流入流路46，從形成於在天線元件32的 配置位置所整合的第1領域42a的氣體放射口 44來將氧 氣體Gf供給至天線元件32的表面37a的周圍，使氧氣體 Gf以一定的流速流入至反應室3 9。此時，從第2氣體供 給部28經由氣體供給管23以一定流量來將TEOS氣體 Gs放出至氣體分散室3 8，未設置放射部40的流路46 ’ 由形成於與氣體分散室3 8連通的第2領域42b的氣體放 射口 44來使以一定的流速流入反應室3 9內。 另外，在供給氧氣體Gf及TEOS氣體Gs時’反應容 器18(反應室39)是利用真空排氣部27來排氣’藉由控制 部12來將反應容器18(反應室39)內例如保持於IPa〜數 l〇〇Pa程度的壓力。藉此’在反應容器18(反應室39)的垂 直方向有氧氣體Gf及TEOS氣體Gs流動。 其次，對天線元件3 2供給高頻信號’而使電磁波放 射於天線元件32的周圍。藉此，在反應室39內’產生在 天線元件3 2的附近局部化的電漿’可取得從氣體放出口 4 4放射的氧氣體G f (活性種氣體）會被解離的氧自由基（反 -23- 200917910 應活性種）。並且，可取得TEOS氣體會被解離的TE0S自 由基（被活化的TEOS氣體）。 在天線陣列3 0的天線元件3 2的周圍附近，氧自由基 (反應活性種）與TEOS自由基會被混合而形成混合氣體。 一旦活性狀態的氧自由基（反應活性種）與TE0S自由基被 混合，則會藉由活性狀態的活性能量在基板3 6的表面 36a形成Si02膜。 在本實施形態中是在放射部4 0形成流路4 6，對天線 元件3 2的表面3 7a僅供給氧氣體Gf(第1原料氣體）， TEOS氣體Gs是使通過天線元件32的間隙33(間）來供給 至處理室3 9。如此在天線元件3 2的表面3 7a僅被供給氧 氣體Gf，所以在利用天線陣列3 0來產生電漿時，亦於天 線元件3 2的表面3 7a只存在氧氣體Gf =藉此，可在天線 元件32的表面37a抑止Si02等的反應生成物的附著或堆 積。如此，可抑止在天線元件32的表面37a附著或堆積 Si〇2等的反應生成物，因此可抑止粒子的發生。更因爲粒 子的發生會被抑止，所以有關形成的膜（SiO 2膜）的膜質亦 可取得較佳者。 又，本實施形態中，因爲往天線元件32的表面3 7a 之Si02等反應生成物的附著會被抑止，所以被利用於 Si〇2膜的成膜之氧氣體Gf及TEOS氣體Gs的比例（利用 效率）會增加，因此成膜速度也會提升。 另外，即使基板3 6例如爲1 m X 1 m程度大小，天線陣 列30還是可生成均一的電漿，如上述般抑止粒子的發 -24- 200917910 生，且成膜速度快，因此可比以往更快形成膜質佳的 Si02 膜。 另外’在本實施形態中’亦可取代第2氣體供給部 2 8，設置原料氣體供給部（未圖不）’取代第1氣體供1 26，設置第3氣體供給部（未圖示）。 此情況，原料氣體供給部是用以對反應容器丨8內供 給爲了‘取得形成於基板36的表面36a的膜所必要的原料 氣體者。例如’在基板36的表面36a形成si〇2膜時，原 料氣體爲供給氧氣體（第1原料氣體）及TEOS氣體（第2原 料氣體）的混合氣體。 原料氣體供給部是具備對應於氣體（對應於所形成的 膜）的種類及數量份的氣瓶（未圖示），且具備調整來自該 氣瓶的氣體流量的流量調整部（未圖示）。在本實施形態中 是對氣瓶充塡氧氣體（第1原料氣體）。 又’原料氣體供給部’爲了供給TEOS氣體Gs，而 具備被充塡有液體的槽（未圖示）、氣化液體的氣化部（未 圖示）、及調節藉由氣化部而被氣化的氣體流量的流量調 整部（未圖示）。本實施形態是在槽中充塡有液體的 TEOS ’藉由氣化部來氣化而取得TEOS氣體Gs(第2原料 氣體）’藉由流量調整部來調整TEOS氣體Gs的流量。 本實施形態中是由原料氣體供給部來對氣體分離室 38供給混合氧氣體（第1原料氣體）及TEOS氣體（第2原 料氣體）的原料氣體。 又’第3氣體供給部是除了原料氣體以外’例如用以 -25- 200917910 供給氧氣體Gf及TEOS氣體Gs以外之未被利用於成膜的 氣體（第3氣體）者。此第3氣體供給部是例如具備氣瓶 (未圖示）及流量調整部（未圖示），在此氣瓶中充塡有未被 利用於成膜的氣體。本實施形態中是例如所被充塡的氣體 爲氬氣體、氮氣體等的惰性氣體。 在如此的構成中，是使由原料氣體供給部所供給的原 料氣體以一定的流速從天線元件3 2間的間隙3 3、及天線 元件3 2與反應容器1 8的壁面的間隙3 3來流入至反應室 3 9內。並且，由第3氣體供給部使未被利用於成膜的氣 體（第3氣體）從整合於天線元件3 2的配置位置的第1領 域42a所形成的氣體放射口 44來供給至天線元件32的表 面37a的周圍而擴散至反應室39內。如此，在原料氣體 (氧氣體（第1原料氣體）、及TEOS氣體（第2原料氣體）的 混合氣體）及氣體（第3氣體）被供給至反應室39內的狀態 下，利用天線陣列3 0來生成電漿。藉此，取得氧自由 基，活化TEOS氣體，而於基板36的表面36a形成Si〇2 膜。 在此情況中是對天線元件32的表面37a的周圍供給 氣體’使天線元件32的表面37a的周圍自原料氣體隔 離’在天線元件32的表面3 7a的周圍不會有原料氣體被 供給的情況。因此，可抑止原料氣體附著或堆積於天線元 件32的表面37a。藉此，粒子的發生會被抑止，且亦可 使成膜速度提升。 即使爲如此取代第2氣體供給部2 8，設置原料氣體 -26- 200917910 供給部（未圖示）’取代第1氣體供給部2 6，設置第3 供給部（未圖示）的構成時，照樣可取得與第1實施形 樣的效果’亦即可以快速的成膜速度來形成膜質佳的1 其次’說明有關本發明的第2實施形態。 圖3是表示本發明的電漿處理裝置的第2實施形 電漿CVD裝置的構成圖。 另外，在本實施形態中，對於和圖1及圖2所示 1實施形態的電漿CVD裝置同一構成物賦予同一符 而省略其詳細的説明。 如圖3所示，本實施形態的電漿c V D裝置5 0相 第1實施形態的電漿CVD裝置1〇(參照圖1) ’是第 體供給部26及第2氣體供給部28的配置位置、以及 放射部5 2的構成相異，除此以外的構成是與第1實 的熱處理裝置1 〇同樣的構成，其詳細的説明省略。 在本實施形態的電漿CVD裝置50中，第1氣體 部26是經由氣體供給管23來連接至反應容器1 8。從 氣體供給部26供給氧氣體Gf至氣體分離室3 8。 並且，本實施形態的氣體放射部5 2是與第1實 態的氣體放射部40(參照圖1)相反，是不隔離氧氣鹘 的供給路，而隔離TE0S氣體Gs的供給路。 本實施形態的氣體放射部5 2基本上是與第1實 態的氣體放射部40(參照圖U同樣的構成’例如在由 所構成的氣體放射板54形成有複數個直徑爲〇.5mm 的貫通孔。該等的貫通孔是形成氣體放出口 56。並 氣體 態同 態的 的第 號， 較於 1氣 氣體 施例 供給 第1 施形 f Gf 施形 SiC 程度 且， -27- 200917910 氣體放射部52亦於氣體放射板54的表面形成有金屬膜’ 且被接地。 氣體放射部52是使從第1氣體供給部26導入的氧氣 體Gf擴散於廣面積。 並且，在本實施形態中，氣體放射部52的氣體放射 板54亦具有跨越反應容器1 08的內部全域的大小，以能 夠覆蓋天線陣列30的方式設置。藉由此氣體放射部52， 反應容器18內會被隔成2個的空間。在反應容器18內， 氣體放射部52的上壁1 8a側的空間爲氣體分散室3 8，氣 體放射部52的下壁1 8b側的空間爲反應室3 9。 而且，在氣體放射部52中，是由垂直於基板平台34 的表面34a的方向來看時，以和設在下方的天線元件32 與天線元件3 2之間（間隙3 3 )整合的第2領域5 4 b、及耜 天線元件3 2與反應容器1 8的壁面之間（間隙3 3 )整合的第 2領域54b所形成之各氣體放射口 56能夠與整合於天線 元件3 2的位置的第1領域5 4 a所形成的氣體放射口 5 6隔 離之方式’沿著天線元件3 2的延伸方向在氣體放射板5 4 的表面藉由隔壁來形成流路5 8。 流路5 8是與形成於和天線元件3 2與天線元件3 2之 間（間隙3 3 )整合的第2領域5 4 b、及和天線元件3 2與反 應容器1 8的各側壁i 8 c、丨8 d之間（間隙3 3)整合的第2領 域5 4b的所有氣體放射口 5 6連接（連通），可經由流路5 8 來對所有的氣體放射口 5 6例如供給TEO S氣體Gs。 此流路5 8是剖面形狀爲]字形狀的隔壁構件會在氣體 -28- 200917910 放射板54的表面沿者天線兀件32所延伸的方向來設置形 成者。在流路5 8連接第2氣體供給部28。 藉此第1氣體供給部26，經由流路46來從氣體放射 口 44使氧氣體Gf在天線元件32的長度方向的全域，供 給至天線元件32的表面37a的周圍，更被供給至反應室 3 9內。 藉此第2氣體供給部2 8，經由流路5 8來從氣體放射 口 56使TEOS氣體Gs在天線元件32的長度方向的全 域，從天線元件3 2間的間隙3 3 '及天線元件3 2與反應 容器18的各側壁18c、18d的間隙33來供給至反應室39 內。 在氣體放射部52中，有關複數的氣體放射口 56中， 形成於第2領域5 4 b者是藉由流路5 8來與形成於和天線 元件3 2的配置位置整合的第1領域5 4 a之其他的氣體放 射口 5 6隔離。因此，經由流路5 8來從形成於第2領域 5 4b的氣體放射口 56是放出由第2氣體供給部28所供給 的TEOS氣體Gs。亦即，TEOS氣體Gs會從天線元件32 的間隙3 3以一定的流速來流入至反應室3 9內。 另一方面，在氣體放射板52的天線元件32的表面 37a周圍，從第1氣體供給部26經由氣體分散室38，氧 氣體Gf會由形成於第1領域54a的氣體放射口 56來以一 定的流速流入至反應室3 9內。 如此，藉由氣體放射部5 0，在天線元件3 2的表面 3 7a的周圍，未被供給TEOS氣體Gs，而是被供給氧氣體 -29 - 200917910BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus used for manufacturing semiconductor elements, flat panel displays, and solar cells, and the like, particularly when a film forming area is large, a film forming speed can be obtained. A plasma processing apparatus that enhances and suppresses the occurrence of particles. [Prior Art] Nowadays, in the manufacture of flat-panel displays such as semiconductor elements, solar cells, or liquid crystal display panels or plasma display panels, etching, sputtering, or CVD (Chemical Vapor Deposition) can be utilized for high-precision processing. deal with. In the manufacture of a semiconductor element, a germanium wafer subjected to a plasma treatment (plasma treatment) and a glass substrate used for a flat panel display are focused on large-scale development. In response to this, the pressure reduction processing chamber (reaction chamber) of the processing apparatus that performs the plasma treatment is also increased in size, and in the pressure reduction processing chamber, the molding precision of the film formed on various substrates such as a semiconductor element or a flat panel display is caused. The reactive species (free radicals) or ions in the large-effect reactive plasma are uniformly formed, and the necessity of performing uniform plasma treatment is large. As a device for manufacturing a large-sized thin film solar cell, for example, an E C R (E1 e c t r ο n C y c 1 〇 t r ο n R e s s n a n c e) electric hair C V D device or an ICP (Inductively Coupled Plasma) plasma device can be used. However, in order to generate a plasma of -5 to 200917910 on a large-area vapor deposition surface of a degree of lmxlm, for example, in an ECR plasma CVD apparatus, a coil for generating a magnetic field for a particle cyclotron and an antenna for a radio wave are used. Configurations will dry up and make it difficult. Then, in the plasma CVD apparatus, an antenna for generating plasma of a large-area vapor deposition surface having a degree of lmxlm has been proposed (Patent Document 1). Patent Document 1 discloses a plasma generating antenna including an array antenna in which a plurality of antenna elements including a columnar conductor covered with a dielectric body are alternately reversed in a power supply direction. Configured to be parallel and planar. By using the plasma generating antenna of Patent Document 1, a plasma having the same spatial distribution of electromagnetic waves can be generated, and a large-area vapor deposition surface of about 1 m × 1 m can be obtained. Next, a conventional plasma CVD apparatus including the array antenna disclosed in Patent Document 1 will be described. Here, FIG. 6 shows a configuration of a conventional plasma CVD apparatus. The conventional plasma CVD apparatus 100 shown in Fig. 6 includes a control unit 102, a distributor 104, an impedance integrator 106, and a rectangular parallelepiped reaction container 108. This control unit 102 is a device for controlling the plasma CVD apparatus 100. An inlet port 110 is formed in the reaction vessel 108, and the membrane gas supply unit i i 4 is connected to the inlet port u 2 via the gas supply pipe 11 2 . In the film forming gas supply unit 141, for example, when the SiO 2 film is formed, oxygen gas and TEOS (Tetra-Ethy Ortho-Silicate) gas (hereinafter referred to as TEOS gas) are supplied as the material gas G. . 200917910 Further, an exhaust port 1 16 is formed in the lower wall 10b of the reaction vessel 108. A vacuum evacuation portion 120 for forming a vacuum in the reaction vessel 108 is connected to the exhaust port 1 16 via the exhaust pipe 1 1 6 . Further, a pressure sensor (not shown) for measuring the internal pressure is provided in the reaction container 108. Further, inside the reaction container 108, a gas emission plate 1 22, an antenna array 126 composed of a plurality of antenna elements 1 24, and a substrate stage 128 are sequentially disposed from the side of the upper wall 10a. The substrate 130 is placed on the surface 128a of the substrate stage 128. Also, the impedance integrator 106 is connected to the antenna element 124' to correct the impedance unconformance caused by the load variation of the antenna element 1 24 when the plasma is generated. The gas emission plate 122 is such that the raw material gas G introduced from the film formation gas supply unit 14 is diffused over a wide area, and has a size that spans the entire inner portion of the reaction container 1 〇 8 . By the gas emission plate 1 22, the inside of the reaction container 108 is partitioned into two spaces. The space on the upper wall 108a side of the gas radiation plate 122 is the gas dispersion chamber 132, and the space on the lower wall 108b side of the gas radiation plate 122 is the reaction chamber 134. Further, the gas radiation plate 122 is formed with a plurality of through holes 122a. This gas emission plate 122 is formed of metal and is grounded. Further, a heater (not shown) is provided on the substrate stage 1 28, and the heater is controlled by the control unit 102. In the conventional plasma CVD apparatus 100, when the SiO 2 film is formed on the surface 130a of the substrate 130 such as a glass substrate or a ruthenium wafer, the pressure in the reaction container 108 is made IPa by the vacuum vent 12 〇. ～ -7 - 200917910 1 The state of the 〇〇Pa level, and the high frequency signal is supplied to the antenna element 1 24 to radiate electromagnetic waves around the antenna element 1 24 . At this time, the material gas dispersion chamber 132 is supplied from the film formation gas supply unit 1 1 4, and the material gas G flows into the reaction chamber 134 from the through hole 122a at a flow rate. Then, the material gas G is ionized to a plasma having a uniform space density. Thereby, a SiO 2 film is formed on the surface of the substrate 130. As described above, in the conventional plasma CVD apparatus, the plasma can be generated. Therefore, the SiO 2 film is formed on the surface 130a of the substrate 130 even in an area having a large degree of lmxlm. [Problem to be Solved by the Invention] As described above, the conventional plasma CVD apparatus 100 can form Si on the surface 130a of the substrate 130 even if it is formed. 02 film. The generated electric paddle is in a state of reaching the antenna element 1 24. The antenna element 14 is placed in the plasma, and the electric field distribution is extremely high in the vicinity of the antenna element surface 124a. Therefore, in the vicinity of the surface l24a of the sky 124, the material gas G is resolved by the plasma. As a result, for example, a reaction product such as SiO 2 Si 2 formed on the surface 130 a of the substrate 130 is excessively generated by the plasma, and the film is not attached, and is deposited or even deposited on the surface 124 a of the antenna element 124 . The ratio of Si〇2 deposited to the film is reduced, and there is a film formation speed reduction number, which is determined by G to gas, and the production of S 130a is uniform. However, the line component of 124 is excessive. When the film is sent, the problem is 200917,10 points. Further, the white matter formed on the surface 124a of the antenna element 124 forms particles, which also causes problems in the processing chamber 134. Because of the addition of the particles, the film formed is reduced. SUMMARY OF THE INVENTION An object of the present invention is to provide an electric paddle processing apparatus which can solve the above problems and which can suppress the occurrence of particles at a film formation rate even when the film formation area is large. (Means for Solving the Problem) In order to achieve the above object, a plasma processing apparatus for processing a target material according to a first raw material gas and a second raw material gas of the present invention has a substrate platform and a system The processing target substrate is connected to the distribution slurry generating portion, and the antenna array is formed by a substantially parallel plane on the surface of the antenna element substrate platform formed by the rod-shaped conductors on the upper dielectric covering surface of the substrate platform. a gas radiation portion that is provided to cover the plasma generation device, and includes a gas emission plate having a double injection port provided above the antenna array; and the first gas supply portion is capable of being capable of A part of the gas emission port of the gas is supplied to the first substrate J Si〇2 through the surface of the antenna element toward the substrate platform (the film quality of the reaction particles is increased by the prior art, and is set, The surface is placed on the surface by using a plate; and the gas radiation plate is used in a number of ways to arrange the portion with the gap. Surface-radiation gas; and -9-200917910 The second gas supply unit is configured to be able to pass through the antenna element from the other portion of the gas emission port of the gas emission plate toward the surface of the substrate platform The second raw material gas is supplied to the gap, and the plasma generating unit generates plasma by using the antenna array in a state where the first raw material gas and the second raw material gas are supplied to the plasma generating unit. When the first material gas is exposed to the antenna element, no deposit occurs, or the amount of adhesion is less than that of the second material gas. In this case, it is preferable that the plurality of gas radiation ports of the gas radiation plate are capable of The plasma generating portion is formed to be open, and the gas emitting plate is connected to a position perpendicular to the surface of the substrate platform, and is connected to the first position of the antenna element. a partition wall forming a flow path is provided in a manner of all the gas radiation ports formed in the field, whereby the first field is isolated by the partition wall The entire gas emission port and the other gas radiation ports formed in the other regions, the first material gas from the first gas supply unit is emitted from the first field through the flow path The first material gas system is supplied to the surface of the substrate platform through the surface of the antenna element, and the second material gas from the second gas supply unit is emitted from the other gas radiation port. In this case, the second material gas system is supplied to the surface of the substrate stage through the gap of the antenna element. Alternatively, it is preferable that a plurality of gas radiation ports of the gas radiation plate are formed so as to be open to the plasma generating portion. In the above-mentioned gas emission-10-200917910, when viewed from the direction perpendicular to the surface of the substrate platform, the gas emission plate is formed in a second field that can be connected to the field of the gap with the antenna element. The entire wall of the gas is provided in the manner of the partition wall forming the flow path, thereby isolating the second field by the partition wall The entire gas emission port and the other gas radiation ports formed in the other regions are emitted, and the first material gas from the first gas supply unit is emitted from the other gas radiation ports. The surface of the antenna element is supplied to the surface of the substrate platform, and the second material gas from the second gas supply unit is radiated from all the gas radiation ports formed in the second region through the flow path. The 'second material gas system is supplied to the surface of the substrate stage through the gap of the antenna element. </ RTI> Preferably, the first material gas is oxygen gas, and the second material gas is TEOS gas. In the plasma processing apparatus of the present invention, the plasma processing apparatus for processing the substrate to be processed using the first material gas and the second material gas is characterized in that: the substrate platform is formed by the substrate to be processed. Arranging on the surface; the plasma generating portion is disposed above the substrate platform, and the antenna element including the rod-shaped conductor covering the surface with the dielectric is defined by a plurality of planes substantially parallel to the surface of the substrate platform An antenna array arranged in a gap; a gas radiation portion provided in a manner of being able to cover the plasma generating portion -11 - 200917910, and a gas emission plate having a plurality of gas radiation ports provided above the antenna array The second gas discharge portion is provided in each gap of the antenna element of the plasma generating portion, and includes a plurality of hollow second gas releasing members, and the second gas releasing member is formed in plural to face the above a hole that is opened in a manner of a substrate platform; a first gas supply unit that is flat from the gas emission plate toward the substrate The first material gas is supplied to the surface; and the second gas supply unit supplies the second material gas to the surface of the substrate platform via the second gas discharge unit, and the plasma generating unit is In a state in which the first material gas and the second material gas are supplied, plasma is generated by the antenna array, and when the first material gas is exposed to the antenna element, no deposit occurs, or the adhesion amount is higher than the above. The second raw material gas is less. Further, it is preferable that the first material gas is oxygen gas and the second material gas is TEOS gas. Further, the plasma processing apparatus of the present invention is a plasma processing apparatus that performs processing on a substrate to be processed using a material gas, and is characterized in that: a substrate platform on which the substrate to be processed is placed on the surface; plasma generation And an antenna array which is disposed above the substrate stage and which uses an antenna element formed by a rod-shaped conductor covering the surface of the substrate to form a plurality of predetermined gaps on a plane substantially parallel to the surface of the substrate stage. The gas emission unit is provided so as to cover the plasma generation unit, and includes a gas emission plate provided above the antenna array. The first gas supply unit is capable of generating a plasma. The first material gas and the second material gas are supplied from the gas radiation portion toward the surface of the substrate platform to supply the first material gas and the second material gas; and the third gas supply unit is capable of The gas radiation portion supplies the third gas to the surface of the substrate platform to supply the third gas; The gas emission plate is formed with a plurality of gas discharge ports that open to the plasma generation portion, and when the gas emission plate is viewed from a direction perpendicular to the surface of the substrate platform among the gas emission ports of the gas emission plate, Providing a partition wall forming a flow path so as to be connectable to all gas discharge ports formed in the first field integrated with the position of the antenna element, thereby isolating all gas discharge ports formed by the first field from the partition wall In the other gas radiation ports formed in the other regions, the third gas from the third gas supply unit is radiated from all the gas radiation ports formed in the first region through the flow path, thereby The three gas system is supplied to the surface of the substrate platform through the surface of the antenna element, and the first material gas and the second material gas from the first gas supply unit are radiated from the other gas radiation ports. The first material gas and the second material gas system pass through a gap of the antenna element toward the substrate Surface of the feed table, said plasma generating unit, based on supplying the first source gas, the second state where the first source gas and the third gas -13-200917910, plasma is generated using the antenna array. Further, it is preferable that the material gas is a mixed gas of oxygen gas and TEOS gas, and the third gas is an inert gas. [Effects of the Invention] According to the plasma processing apparatus of the present invention, the first material gas is supplied to the surface of the substrate platform through the surface of the antenna element, and the second material is supplied to the surface of the substrate platform through the gap of the antenna element. In the gas state, the plasma is generated by the antenna array, and even if the reaction product is generated by the first material gas and the second material gas, the first material gas is supplied around the antenna element, so that the antenna element is present. The condition of attaching or depositing the reaction product is suppressed. Further, even if the second material gas contains a component which is likely to adhere to the antenna element, the first material gas is supplied around the antenna element, so that the adhesion is suppressed. Therefore, the occurrence of particles will be suppressed. In addition, since the reaction product is deposited or deposited on the antenna element, the utilization efficiency of the first material gas and the second material gas is increased, and the film formation speed is increased. Based on these factors, even when the film formation area is large, the film formation speed can be increased, and the occurrence of particles can be suppressed. Further, according to the plasma processing apparatus of the present invention, the third gas different from the material gas is supplied to the surface of the substrate platform through the surface of the antenna element, and the material is supplied to the surface of the substrate platform through the gap of the antenna element. In the gas state, the plasma is generated by the antenna array, whereby the third gas is supplied around the antenna element from -14 to 200917910, so that the reaction product is deposited or accumulated on the antenna element. Therefore, the occurrence of particles is suppressed. Further, when the reaction product is attached or deposited on the antenna element, the utilization efficiency of the material gas is increased, and the film formation speed is increased. Based on these factors, even if the film formation area is large, the film formation speed can be increased, and the occurrence of particles can be suppressed. [Embodiment] Hereinafter, a plasma processing apparatus according to the present invention will be described in detail based on a preferred embodiment shown in the drawings. Fig. 1 is a configuration diagram of a plasma CVD apparatus according to a first embodiment of the plasma processing apparatus of the present invention. In the plasma CVD apparatus 1 (hereinafter referred to as CVD apparatus 1) shown in Fig. 1 of the present embodiment, the oxygen gas Gf is used as the first material gas (active species gas), and the TEOS gas Gs is used as the second material gas. An example in which a Si 2 film is formed on the surface 36 a of the substrate (processing target substrate) 36 such as a glass substrate or a tantalum wafer will be described. Further, in the plasma processing apparatus of the present invention, the film formed on the substrate 36 is not limited to the S i Ο 2 film. The CVD apparatus 1A shown in Fig. 1 has a control unit 12, a distributor 14, an impedance integrator, and a reaction container 18 having a rectangular parallelepiped shape. This control unit 12 is a machine that controls the c V D device 1 后 as will be described later. Further, the reaction container 18 is made of metal or alloy and is grounded. An introduction port 22 is formed in the upper wall 18a of the reaction container 18. The gas supply pipe 23 is connected to the inlet 22 . Further, the gas supply pipe 23 is connected to the second gas supply unit 28 via -15-200917910. In the second gas supply unit 28, for example, TEOS gas Gs (second material gas) is supplied into the reaction container 18. The second gas supply unit 28 is provided with, for example, a TEOS tank (not shown) filled with a liquid, a vaporization unit (not shown) that vaporizes the TEOS of the liquid, and a flow rate for adjusting the vaporized TEOS. Flow adjustment unit (not shown). In the second gas supply unit 28, the TEOS gas Gs (second material gas) is obtained by vaporizing the TEOS of the liquid by the vaporization unit, and the flow rate adjustment unit adjusts the flow rate of the TEOS gas Gs, and then The TEOS gas Gs is supplied into the reaction vessel 18. Further, an exhaust port 24 is formed in the lower wall 18b of the reaction vessel 18. An exhaust pipe 25 is connected to the exhaust port 24. Further, the vacuum exhaust unit 27 is connected to the exhaust pipe 25. This vacuum exhaust unit 27 is a vacuum pump having a dry pump, a turbo pump, or the like. Further, a pressure sensor (not shown) for measuring the internal pressure is provided in the reaction container 18. Further, inside the reaction container 18, a substrate stage 34 and a substrate 36 which are placed on the surface 34a are sequentially provided from the side of the lower wall 18b, and an antenna composed of a plurality of antenna elements 32 is provided above the substrate stage 34. The array (plasma generating unit) 30 further includes a gas radiating portion 40 (gas emitting plate 42) above the antenna array 30 so as to cover the antenna array 30. Here, FIG. 2 is a schematic plan view showing an antenna array of the plasma CVD apparatus of the present embodiment. As shown in FIG. 2, the antenna array 30 is a plurality of antenna elements 3 2 will be -16-200917910 on the substrate platform. The planes 34a of the surface 34a are substantially parallel to each other (not shown), and a plurality of predetermined gaps (inter) 3 3 are arranged in parallel with each other to arrange the constituents. This antenna array 30 is provided on the lower side of the gas radiation portion 40 (the lower wall 1 8 b side). Further, the antenna element 32 is also provided with a predetermined gap 3 3 for each of the side walls 1 8 c and 1 8 d. In the present invention, the gap 3 3 between the antenna element 32 and each of the side walls 18c, 18d is also treated in the same manner as the gap 33 of each antenna element 32. Further, in the antenna array 30, each of the antenna elements 32 is disposed so as to straddle the two side walls 18c and the side walls 18d opposite to the reaction container 18. The antenna array 30 (each antenna element 32) is provided in parallel with the gas radiation plate 42 (see Fig. 1) of the gas radiation portion 40 (see Fig. 1) and the surface 34a (see Fig. 1) of the substrate stage 34. The antenna element 32 is a monopole antenna, and is electrically insulated from the opening portion (not shown) formed by the side walls 1 S e and 1 8 f of the reaction container 18 = in the antenna array 30, as shown in FIG. In the opposite direction to the adjacent antenna elements 32, they protrude from the side walls 18e, 18f in the reaction container 18, and the power supply direction is reversed. The side of the antenna element 32 which is the high frequency current supply terminal is connected to the impedance integrator 16. This impedance integrator 16 is a matching box. The impedance integrator 16 is used together with the frequency adjustment of the high frequency signal generated by the high frequency power supply of the control unit 12 to correct the impedance unconformity caused by the load variation of the antenna element 32 in the generation of the electric music. . Each of the antenna elements 32 is formed in a rod shape (or a tubular shape) composed of a conductor having a high electrical conductivity, and is used at a high frequency wavelength of (2n+1)/4 times (n is a 〇 or a positive integer). The length of the antenna element as a monopole antenna is -17-200917910 in length. Each of the antenna elements 3 2 is housed in a cylindrical member made of a dielectric such as quartz. The surface of each of the antenna elements 3 2 is covered with a dielectric such as quartz. Thus, by using a dielectric to cover the rod-shaped conductor, the capacitance and inductance of the antenna element 32 can be adjusted. Thereby, the high-frequency current can be efficiently propagated along the longitudinal direction of the antenna element 32, and the electromagnetic wave can be efficiently radiated. Further, the surface of the antenna element 3 2 hereinafter does not mean the surface of the rod-shaped conductor, but the surface 37 7 a of the cylindrical member 37. In the present embodiment, the impedance integrator 16 is provided, and as will be described later, the metal film formed on the gas radiation portion 40 (the gas radiation plate 42) is grounded, thereby interacting with the electromagnetic wave forming the mirror image relationship. The antenna element 32 forms a predetermined electromagnetic wave. Further, since the antenna element 32 constituting the antenna array 30 is opposite to the power supply direction of the adjacent antenna element 32, electromagnetic waves are uniformly formed in the reaction chamber 39. Here, as shown in Fig. 1, the substrate stage 34 has the substrate 36 placed on the surface 34a as described above. In the substrate stage 34, the substrate 36 is placed such that the center of the substrate stage 34 coincides with the center of the substrate 36. Further, a heat generating body (not shown) for heating the substrate 36 is provided inside the substrate stage 34, and an electrode plate (not shown) to be grounded is further provided. The heating element is connected to the control unit 12, and the heating of the heating element is controlled by the control unit 12. Alternatively, the electrode plate may be connected to a bias power source (not shown) by applying a bias voltage to the electrode plate to apply a predetermined bias voltage. -18- 200917910 Further, as shown in Fig. 1, the gas radiation portion 40 is formed, for example, in a gas emission plate 42 made of SiC, and has a plurality of diameters of 0. 3~1. Through hole of 0mm. These through holes are formed into gas discharge ports 44. Further, in the gas radiation portion 40, a metal film is formed on the surface of the gas radiation plate 42, and is grounded. In the present embodiment, the gas emission plate 42 of the gas radiation portion 40 has a size spanning the entire interior of the reaction container 18, and is provided so as to cover the antenna array 30. The reaction vessel 18 is partitioned into two spaces by the gas radiation portion 4, and the space on the upper wall 18a side of the gas radiation portion 40 is the gas dispersion chamber 3, and the gas radiation portion 40. The space on the side of the wall 1 8 b is the reaction chamber 39. The gas radiation portion 40 diffuses the gas supplied to the gas dispersion chamber 38 in the reaction chamber 39 in a wide area. In the present embodiment, the gas emitting unit 40 diffuses the TEOS gas Gs introduced from the second gas supply unit 28 into the reaction chamber 39 over a wide area. Further, 'in the gas radiation portion 40, the flow path 46 is formed by the partition walls. The flow path 46 is viewed from a direction perpendicular to the surface 34a of the substrate stage 34 to isolate: an antenna formed at and below. The position of the antenna element 32 of the array 3 is integrated with the gas radiation port 44 of the first field 42a and the position of the antenna element 32. The field, that is, the second field 42b integrated in the field between the antenna element 32 and the antenna element 3 2 (gap 3 3 ), and integrated between the antenna element 32 and the wall surface of the reaction container 18 (gap 33) Each gas radiation port 44 of the second field 42b. The flow path 46 is connected (connected) to the entire gas radiation port 44 formed in the first -19 to 200917910 field 42a integrated with the antenna element 32, and can be supplied to the entire gas discharge port 44 via the flow path 46, for example. Oxygen gas Gf (first material gas). This flow path 46 is a partition member having a cross-sectional shape of a π-shape, and is formed on the surface of the gas-emitting plate 42 in the direction in which the antenna element 32 extends. The first gas supply unit 26 is connected to the flow path 46. The first gas supply unit 26 is provided with, for example, a gas cylinder (not shown) and a flow rate adjusting unit (not shown), and the gas cylinder is filled with the oxygen-containing gas Gf. By the first gas supply unit 26, the oxygen gas Gf is supplied from the gas discharge port 44 to the entire surface of the antenna element 32 in the longitudinal direction of the antenna element 32, and is supplied to the reaction. Inside chamber 39. Further, the gas discharge port 44 of the second field 42b that is not integrated with the position of the antenna element 32 is in communication with the gas separation chamber 38 and the reaction chamber 39, and supplies the TEOS gas Gs supplied to the gas separation chamber 38 to the reaction chamber 3. 9 inside. As described above, in the gas radiation portion 40, the plurality of gas radiation ports 44 formed in the first region 42a are separated from the other gas radiation ports 44 formed in the second region 42b by the flow path 46. Therefore, the gas irradiance port 44 formed in the first field 42a does not emit the ΤΕ S gas Gs supplied from the second gas supply unit 28. Therefore, the oxygen gas Gf supplied through the flow path 46 is supplied around the surface 37a of the antenna element 32. Therefore, the gas radiation portion 40 does not supply the TEOS gas Gs around the surface 37a of the antenna element 32, and the oxygen gas Gf is supplied. -20- 200917910 In addition, the gas supplied from the first gas supply unit 26 via the flow path 46 is not limited to the oxygen gas, and the gas supplied to the film is not attached or accumulated on the surface 37a of the antenna element 32. The situation, or the degree of attachment or accumulation is small. As described above, the gas radiation portion 40 of the present embodiment is a supply path for isolating the oxygen gas Gf, and does not isolate the supply path of the TEOS gas Gs. The control unit is a high-frequency power source (not shown) including a high-frequency oscillation circuit and an amplifier, and a current 'voltage sensor (not shown). The high-frequency power source (not shown) performs the high-frequency signal according to the detection signal of the current/voltage sensor. The change of the oscillation frequency of the power supply and the adjuster of the impedance integrator 16. The control unit 12 is a state in which the frequency of the common high-frequency signal is controlled to the antenna element 32, and all the antenna elements 32 are brought close to the impedance integration state, and then connected to the impedance integrator 16 of each antenna element 3 2 . The impedance of each antenna element 32 is individually adjusted. The control unit 12 and the plurality of impedance integrators 16 are connected via a distributor 14. Further, the control unit 12 controls the power supply of the high-frequency signal to the antenna element 32 as well. Further, the control unit 1 2 also controls the first gas supply unit 26, the second gas supply unit 28, and the vacuum exhaust unit 27. The control unit 1 2 controls the supply timing, flow rate, and the like of the oxygen gas Gf (first material gas) of the first gas supply unit 26. Further, the control unit 12 controls the timing of supply of the TEOS gas Gs of the second gas supply unit 28, the flow rate, and the like. Further, the source gas or the like in the reaction container 18 can be excluded by the control unit 12, and the pressure in the reaction container 18 can be adjusted to a desired pressure. In the present embodiment, for example, when the Si〇2 film is formed, the TEOS gas Gs introduced from the ith gas-21 - 200917910 body supply unit 26 flows from the upper wall 1 8 a side to the lower wall in the reaction container 18 . The 1 8 b side (hereinafter, the direction from the upper wall 1 8 a side to the lower wall 18 b side is referred to as "vertical direction") is discharged from the exhaust port 24 . Further, as will be described later, the TEOS gas Gs is activated in the reaction vessel 18 during the discharge to the outside, and is further excited to be mixed with the oxygen gas Gf which is a reactive species to form a mixed gas. In the present embodiment, the pressure in the reaction container 18 is in a state of IPa to several 100 Pa by the vacuum exhaust unit 27, and the oxygen gas Gf (first material gas) is passed through the flow path 46. The periphery of the surface 37a of the antenna element 32 is supplied, and the TEOS gas Gs is supplied from the gas discharge port 44 of the gas radiation plate 42. Further, electromagnetic waves are radiated to the periphery of the antenna element 32 by supplying a high frequency signal to the antenna element 32. Thereby, a plasma (not shown) is generated in the vicinity of the antenna element 32 in the reaction container 18, and the oxygen gas Gf (active species gas) emitted from the gas radiation portion 40 is excited to obtain oxygen radicals (reaction) Active species). At this time, since the generated plasma is electrically conductive, electromagnetic waves radiated from the antenna element 32 are easily reflected to the plasma. Therefore, electromagnetic waves are locally present in a partial field around the antenna element 32. Thus, in the antenna array 30 having a plurality of antenna elements 32 composed of monopole antennas, plasma is locally formed in the vicinity of the surface 37a of the antenna element 3 2, on the surface 3 7a of the antenna element 32. Around the electric field, the electric field distribution will become extremely high. In addition, a detailed description of the principle of plasma generation using such an antenna array is described in the Japanese Patent Application Laid-Open No. 2003-86651. Further, the detailed impedance integration method of the -22-200917910 line of the plasma generating apparatus using the antenna array is described in the specification of the applicant of the present application, Japanese Patent Application No. 2005-014256. The detailed impedance integration method of the antenna array and the antenna of the present invention may be, for example, a method described in each of the above specifications. Next, a film formation method of the c V D device 10 of the present embodiment will be described using a S i Ο 2 film as an example. First, the oxygen gas Gf (active species gas) flows into the flow path 46 at a constant flow rate from the first gas supply unit 26, and is formed from the gas radiation port 44 formed in the first field 42a integrated at the arrangement position of the antenna element 32. The oxygen gas Gf is supplied to the periphery of the surface 37a of the antenna element 32, and the oxygen gas Gf flows into the reaction chamber 39 at a constant flow rate. At this time, the TEOS gas Gs is discharged from the second gas supply unit 28 through the gas supply pipe 23 to the gas dispersion chamber 3 at a constant flow rate, and the flow path 46' where the radiation portion 40 is not provided is formed in the gas dispersion chamber 38. The gas discharge port 44 of the connected second field 42b flows into the reaction chamber 39 at a constant flow rate. Further, when the oxygen gas Gf and the TEOS gas Gs are supplied, the reaction vessel 18 (reaction chamber 39) is evacuated by the vacuum exhaust unit 27, and the reaction vessel 18 (reaction chamber 39) is held, for example, by the controller 12. The pressure on the degree of IPa ~ several l〇〇Pa. Thereby, the oxygen gas Gf and the TEOS gas Gs flow in the vertical direction of the reaction vessel 18 (reaction chamber 39). Next, the antenna element 32 is supplied with a high frequency signal ', and electromagnetic waves are radiated around the antenna element 32. Thereby, in the reaction chamber 39, 'the plasma which is localized in the vicinity of the antenna element 32' can obtain oxygen radicals from which the oxygen gas Gf (active species gas) emitted from the gas discharge port 4 is dissociated ( Anti-23- 200917910 should be active species). Further, a TEOS free radical (activated TEOS gas) in which TEOS gas is dissociated can be obtained. In the vicinity of the antenna element 32 of the antenna array 30, oxygen radicals (reactive species) and TEOS radicals are mixed to form a mixed gas. Once the oxygen radical (reactive species) in the active state is mixed with the TEOS radical, the SiO 2 film is formed on the surface 36a of the substrate 36 by the active energy in the active state. In the present embodiment, the flow path 46 is formed in the radiation portion 40, and only the oxygen gas Gf (first material gas) is supplied to the surface 37a of the antenna element 32, and the TEOS gas Gs is the gap 33 passing through the antenna element 32. (Between) is supplied to the processing chamber 39. Thus, only the oxygen gas Gf is supplied to the surface 37a of the antenna element 32. Therefore, when the plasma is generated by the antenna array 30, only the oxygen gas Gf is present on the surface 37a of the antenna element 32. The adhesion or deposition of the reaction product such as SiO 2 is suppressed on the surface 37a of the antenna element 32. In this way, it is possible to suppress the deposition or deposition of a reaction product such as Si〇2 on the surface 37a of the antenna element 32, so that the occurrence of particles can be suppressed. Further, since the occurrence of particles is suppressed, the film quality of the formed film (SiO 2 film) can also be obtained. Further, in the present embodiment, since the adhesion of the reaction product such as SiO 2 to the surface 373 of the antenna element 32 is suppressed, the ratio of the oxygen gas Gf and the TEOS gas Gs used for the formation of the Si 〇 2 film ( The utilization efficiency will increase, so the film formation speed will also increase. In addition, even if the substrate 36 is, for example, about 1 m X 1 m, the antenna array 30 can generate a uniform plasma, and as described above, the emission of the particles is suppressed, and the film formation speed is fast, so that it can be more than ever. A film-like SiO 2 film is formed quickly. Further, in the present embodiment, instead of the second gas supply unit 2, a raw material gas supply unit (not shown) may be provided instead of the first gas supply unit 126, and a third gas supply unit (not shown) may be provided. In this case, the material gas supply unit is for supplying the raw material gas necessary for "taking the film formed on the surface 36a of the substrate 36" in the reaction container 丨8. For example, when the si〇2 film is formed on the surface 36a of the substrate 36, the raw material gas is a mixed gas of oxygen gas (first material gas) and TEOS gas (second material gas). The material gas supply unit is provided with a gas cylinder (not shown) corresponding to the type and number of parts of the gas (corresponding to the formed film), and includes a flow rate adjusting unit (not shown) that adjusts the flow rate of the gas from the gas bottle. . In the present embodiment, the gas cylinder is filled with oxygen gas (first material gas). In addition, the raw material gas supply unit includes a tank (not shown) filled with a liquid, a vaporization unit (not shown) for vaporizing the liquid, and adjustment by the vaporization unit in order to supply the TEOS gas Gs. A flow rate adjustment unit (not shown) for vaporizing the gas flow rate. In the present embodiment, the TEOS of the liquid filled in the tank is vaporized by the vaporization unit to obtain the TEOS gas Gs (second raw material gas). The flow rate adjustment unit adjusts the flow rate of the TEOS gas Gs. In the present embodiment, the raw material gas supply unit supplies the mixed gas of the mixed oxygen gas (first raw material gas) and the TEOS gas (second raw material gas) to the gas separation chamber 38. In addition, the third gas supply unit is a gas (third gas) which is not used for film formation other than the oxygen gas Gf and the TEOS gas Gs, for example, other than the source gas. The third gas supply unit includes, for example, a gas cylinder (not shown) and a flow rate adjusting unit (not shown), and the gas cylinder is filled with a gas that is not used for film formation. In the present embodiment, for example, the gas to be charged is an inert gas such as argon gas or nitrogen gas. In such a configuration, the material gas supplied from the material gas supply unit is supplied from the gap 3 3 between the antenna elements 32 and the gap 3 3 between the antenna element 3 2 and the wall surface of the reaction container 18 at a constant flow rate. Flowed into the reaction chamber 39. In addition, the third gas supply unit supplies the gas (third gas) not used for film formation to the antenna element 32 from the gas radiation port 44 formed in the first field 42a integrated at the arrangement position of the antenna element 32. The periphery of the surface 37a diffuses into the reaction chamber 39. In the state where the source gas (the mixed gas of the oxygen gas (the first material gas) and the TEOS gas (the second material gas)) and the gas (the third gas) are supplied into the reaction chamber 39, the antenna array 3 is used. 0 to generate plasma. Thereby, an oxygen radical is obtained, and the TEOS gas is activated to form a Si〇2 film on the surface 36a of the substrate 36. In this case, the gas is supplied to the periphery of the surface 37a of the antenna element 32, and the periphery of the surface 37a of the antenna element 32 is isolated from the material gas. The raw material gas is not supplied around the surface 37a of the antenna element 32. . Therefore, it is possible to suppress the adhesion or accumulation of the material gas to the surface 37a of the antenna element 32. Thereby, the occurrence of particles is suppressed, and the film formation speed can be increased. In the case where the third gas supply unit 2 is provided in place of the second gas supply unit 2, a supply unit -26-200917910 supply unit (not shown) is provided instead of the first gas supply unit 26, and a third supply unit (not shown) is provided. The effect of the first embodiment can be obtained as it is, that is, the film formation quality can be quickly formed at a rapid film formation rate. Next, a second embodiment of the present invention will be described. Fig. 3 is a view showing the configuration of a plasma CVD apparatus according to a second embodiment of the plasma processing apparatus of the present invention. In the present embodiment, the same components as those of the plasma CVD apparatus of the embodiment shown in Fig. 1 and Fig. 2 are denoted by the same reference numerals, and detailed description thereof will be omitted. As shown in Fig. 3, the plasma CVD apparatus 1 (see Fig. 1) of the first embodiment of the plasma c VD apparatus of the present embodiment is the arrangement of the first supply unit 26 and the second gas supply unit 28. The position and the configuration of the radiation portion 52 are different, and the other configuration is the same as that of the first actual heat treatment device 1A, and detailed description thereof will be omitted. In the plasma CVD apparatus (50) of the present embodiment, the first gas portion (26) is connected to the reaction vessel (18) via the gas supply pipe (23). The oxygen gas Gf is supplied from the gas supply unit 26 to the gas separation chamber 38. In addition, the gas radiation portion 52 of the present embodiment is a supply path that isolates the TEOS gas Gs without isolating the supply path of the oxygen gas, as opposed to the gas radiation portion 40 (see Fig. 1) of the first embodiment. The gas radiation portion 52 of the first embodiment is basically the same as the gas radiation portion 40 of the first embodiment (the same configuration as that of Fig. U). For example, a plurality of diameters are formed by the gas radiation plate 54 formed. 5mm through hole. These through holes are formed into gas discharge ports 56. The gas phase is the same as that of the first gas, and the first gas is applied to the first gas, and the gas is formed on the surface of the gas radiation plate 54. ' And is grounded. The gas radiation portion 52 diffuses the oxygen gas Gf introduced from the first gas supply portion 26 over a wide area. Further, in the present embodiment, the gas radiation plate 54 of the gas radiation portion 52 also has a size spanning the entire interior of the reaction container 108, and is provided so as to cover the antenna array 30. By the gas radiation portion 52, the inside of the reaction container 18 is partitioned into two spaces. In the reaction container 18, the space on the upper wall 18a side of the gas radiation portion 52 is the gas dispersion chamber 3, and the space on the lower wall 18b side of the gas radiation portion 52 is the reaction chamber 39. Further, in the gas radiation portion 52, when viewed from the direction perpendicular to the surface 34a of the substrate stage 34, the second portion is integrated with the antenna element 32 and the antenna element 32 (the gap 3 3 ) provided below. Each of the gas radiation ports 56 formed by the second field 54b integrated between the field 5 4 b and the 耜 antenna element 3 2 and the wall surface of the reaction container 18 (gap 3 3 ) can be integrated with the position of the antenna element 32. The gas passage opening 56 formed in the first field 534 is blocked. The flow path 58 is formed on the surface of the gas radiation plate 514 by the partition wall along the extending direction of the antenna element 3 2 . The flow path 58 is a second field 5 4 b formed in integration with the antenna element 32 and the antenna element 32 (gap 3 3 ), and the antenna element 3 2 and each side wall i 8 of the reaction container 18 c, 丨8 d (gap 3 3), all the gas discharge ports 56 of the second field 5 4b are connected (connected), and all the gas discharge ports 5 6 can be supplied to the TEO S via the flow path 58 Gas Gs. This flow path 58 is a partition member having a sectional shape of a shape of a word which is formed in the direction in which the surface of the gas plate -28-200917910 radiation plate 54 extends along the antenna element 32. The second gas supply unit 28 is connected to the flow path 58. The first gas supply unit 26 supplies the oxygen gas Gf from the gas discharge port 44 to the entire surface of the antenna element 32 in the longitudinal direction of the antenna element 32 via the flow path 46, and supplies it to the reaction chamber. 3 9 inside. The second gas supply unit 2 8 causes the TEOS gas Gs to pass through the gas passage 56 from the gas passage 56 in the entire longitudinal direction of the antenna element 32, from the gap 3 3 ' between the antenna elements 32 and the antenna element 3 2 is supplied into the reaction chamber 39 through a gap 33 between the side walls 18c and 18d of the reaction container 18. In the gas radiation portion 52, among the plurality of gas radiation ports 56, the second region 5b is formed in the first region 5 formed by the flow path 58 and integrated with the arrangement position of the antenna element 32. The other gas discharge ports of 4 a are isolated. Therefore, the TEOS gas Gs supplied from the second gas supply unit 28 is discharged from the gas discharge port 56 formed in the second field 54b via the flow path 58. That is, the TEOS gas Gs flows into the reaction chamber 39 from the gap 3 3 of the antenna element 32 at a constant flow rate. On the other hand, around the surface 37a of the antenna element 32 of the gas-emitting plate 52, the oxygen gas Gf is fixed by the gas discharge port 56 formed in the first field 54a from the first gas supply unit 26 via the gas dispersion chamber 38. The flow rate flows into the reaction chamber 39. As described above, the gas radiation portion 50 is supplied with the oxygen gas -29 - 200917910 instead of the TEOS gas Gs around the surface 37a of the antenna element 32.
Gf。 如此，在氧氣體Gf及TEOS氣體被供給於反應室39 內的狀態下，利用天線陣列3 0來生成電漿。藉此，取得 氧自由基（radical)，活化TEOS氣體’而於基板36的表面 36a形成有Si02膜。 在本實施形態的電漿CVD裝置50中是經由流路58 來從天線元件3 2間的間隙3 3、及天線元件3 2與反應容 器18的壁面的間隙33供給TEOS氣體Gs。另一方面， 在天線元件32的表面37a的周圍是由氣體放射板52來供 給氧氣體Gf，而使天線元件32的表面37a的周圍自 TEO S氣體Gs隔離。因此，可抑止附著或堆積於天線元 件32的表面37a。藉此，粒子的發生會抑止，且亦可使 成膜速度提升。因此，可以快速的成膜速度來形成膜質佳 的膜。 並且，可藉由天線陣列30來生成均一的電漿，因此 即使基板例如爲1 m X 1 m程度的大小時，還是可以優良的 膜質且快速的成膜速度來例如形成Si〇2膜等。 而且，在本實施形態的電漿CVD裝置50中是將氧氣 體Gf供給至氣體放射部5 2，所以在氣體放射口 5 6不會 有氣體的成份的一部份堆積的情況。因此，粒子的發生會 被抑止，且氣體放射部52的維修也可簡素化》 又，在本實施形態的電漿CVD裝置50的成膜方法中 也是自天線元件32的表面37a的周圍隔離TEOS氣體 Gs，而來供給TEOS氣體Gs，因此附著於天線元件32的 -30- 200917910 表面3 7 a的情況會被抑止，可取得與第1實施形態同様的 效果。 另外，在本實施形態中亦如第1實施形態，可爲取代 第1氣體供給部26，而設置第3氣體供給部（未圖示），取 代第2氣體供給部28，而設置原料氣體供給部（未圖示）之 構成。此情況，原料氣體供給部及第3氣體供給部的構成 是與第1實施形態同樣。 在如此的構成中是從原料氣體供給部經由流路5 8來 由位於天線元件32間的間隙33、及天線元件32與反應 容器1 8的壁面的間隙3 3之氣體放射口 5 6使原料氣體以 一定的流速流入至反應室39內。 並且，從第3氣體供給部，由與天線元件32的配置 位置整合的氣體放射口 54來使未被利用於成膜的氣體（第 3氣體）在天線元件32的長度方向的全域供給至天線元件 3 2的表面3 7 a，擴散於反應室3 9內。如此，在原料氣體 (氧氣體（第1原料氣體）、及TEOS氣體（第2原料氣體）的 混合氣體）及氣體（第3氣體）被供給至反應室39內的狀態 下，利用天線陣列3 0來生成電漿。藉此，取得氧自由 基’活化TEOS氣體，而於基板36的表面36a形成Si〇2 膜。 在此情況中是對天線元件32的表面37a的周圍供給 氣體’使天線元件3 2的表面3 7 a的周圍自原料氣體隔 離’在天線元件32的表面37a的周圍不會有原料氣體被 供給的情況。因此，可抑止原料氣體附著或堆積於天線元 -31 - 200917910 件32的表面37a。藉此，粒子的發生會被抑止，且亦可 使成膜速度提升。 即使爲如此取代第2氣體供給部28，設置原料氣體 供給部（未圖示），取代第1氣體供給部26，設置第3氣體 供給部（未圖示）的構成，照樣可取得與第1實施形態同樣 的效果’亦即可以快速的成膜速度來形成膜質佳的膜。 其次’說明有關本發明的第3實施形態。 圖4是表示本發明的電漿處理裝置的第3實施形態的 電獎CVD裝置的構成圖。圖5(a)是表示本發明的電漿處 理裝置的第3實施形態的電漿CVD裝置的第2原料氣體 放出部之一例的模式立體圖，圖（b)是圖5(a)所示之第2 原料氣體放出部的第2原料氣體放出構件的模式剖面圖， 圖（c)是圖5(a)所示之第2原料氣體放出部的第2原料氣 體放出構件的其他例的模式剖面圖。 另外’在本實施形態中，對於和圖1及圖2所示之第 1實施形態的電槳CVD裝置同一構成物賦予同一符號， 而省略其詳細的説明。 如圖4所示，本實施形態的電漿CVD裝置60相較於 第1實施形態的電漿CVD裝置1〇(參照圖1)，是第1氣 體供給部26及第2氣體供給部28的配置位置、以及氣體 放射部62的構成相異，且設有第2原料氣體放出部70的 點不同，除此以外的構成則是與第1實施例的熱處理裝置 1 0同樣構成，其詳細的説明省略。 在本實施形態的電漿Cv D裝置6 0中，第1氣體供給 -32- 200917910 部26會經由氣體供給管23來連接至反應容器1 8。從第1 氣體供給部2 6供給氧氣體Gf至氣體分離室3 8。 並且，本實施形態的氣體放射部62相較於第1實施 形態的氣體放射部40(參照圖1 )，未形成有流路46的點 相異，除此以外的構成則是與第1實施形態的氣體放射部 4 0 (參照圖1)同樣的構成。 本實施形態中也是藉由氣體放射部62來將反應容器 1 8內隔成2個的空間，氣體放射部6 2的上壁1 8 a側的空 間爲氣體分散室3 8，氣體放射部5 2的下壁1 8 b側的空間 爲反應室3 9。並且，本實施形態的氣體放射部62也是使 從第1氣體供給部26導入氣體分離室38的氧氣體Gf(第 1原料氣體）以廣面積來擴散於反應室39內。 本實施形態的第2原料氣體放出部70是具有：在氧 氣體Gf(第1原料氣體）的流動途中，從位於天線陣列30 的間隙33的氣體放射口來將TEOS氣體Gs(第2原料氣體） 放出至反應室39內的機能。 如圖5(a)所示，此第2原料氣體放出部70是具有第 2原料氣體放出構件72、連接管74a、74b、及連結管 76，且被設於氣體放射部62的下方。 第2原料氣體放出構件72是由其兩端部折彎的管狀 構件所構成者，在折彎至內側的側呈相反側的周面形成有 複數個孔78 (參照圖5(b))，該孔78是沿著第2原料氣體 放出構件72的長度方向來對基板平台34的表面34a開 口，且具有所定的大小。此孔78爲第2原料氣體放出 -33- 200917910 口。 在第2原料氣體放出部70中是第2原料氣體放出構 件7 2會設置所定間隔的間隙7 3，例如7根排列配置。在 各隙間73的位置配置有天線元件3 2。在各第2原料氣體 放出構件72中，折彎至內側的部份會分別被插通於氣體 放出板42所形成的孔64，從氣體放出板42突出至上方 側。並且，各第2原料氣體放出構件72的端部是分別以 連接管74a、74b來連接。而且，在連接管74b連接有連 結管76。在一方的連結管76連接供給第2原料氣體的第 2氣體供給部2 8 (參照圖4)。 並且，在第2原料氣體放出部70中，第2原料氣體 放出構件72、連接管74a、74b及連結管76是全部連 通。藉此，一旦第2原料氣體放出部70由第2氣體供給 部28來供給TEOS氣體Gs，則TEOS氣體Gs會從各第2 原料氣體放出構件72的各孔78來往基板平台34噴出。 又，如圖5(a)所示，第2原料氣體放出部70是以孔 7 8能夠朝向基板平台3 4，來到天線陣列3 〇的間隙3 3的 位置之方式，將各第2原料氣體放出構件72配置於反應 容器1 8內。藉由此構成’在本實施形態中，可由天線陣 列3 0的間隙3 3 ’且比氣體放射部6 2更接近基板平台3 4 的表面34a(基板36的表面36 a)的位置來將TEOS氣體Gs 供給至反應室3 9。 本實施形態中也是在氧氣體Gf及TEOS氣體被供給 至反應室3 9內的狀態下，利用天線陣列3 0來生成電漿。 -34- 200917910 藉此，取得氧自由基，活化TEOS氣體，而於基板36的 表面36a形成Si〇2膜。 另外，在第2原料氣體放出部70中，第2原料氣體 放出構件72的孔78是只要能夠對基板平台34的表面 34a(基板36的表面36 a)均一地放出TEOS氣體Gs的方式 形成即可，有關形狀及配置圖案方面並無特別的限定。例 如圖5(c)所示，可在第2原料氣體放出構件72a的下方側 的周面，在與長度方向正交的管的剖面，將孔78a、78b 形成於互相對向的位置。 在本實施形態的電漿CVD裝置60中，由於是從設於 天線陣列3 0的間隙3 3的各第2原料氣體放出部72的各 孔78來放出TEOS氣體Gs，因此在天線元件32的表面 3 的周圍不會有TEOS氣體Gs流入。並且，在天線元 件32的表面37a的周圍是由氣體放出口來供給氧氣體 Gf。 因此’氧氣體Gf與TEOS氣體Gs反應而生成的 S i 〇 2附著或堆積於天線元件3 2的表面3 7 a的情況會更被 抑止。藉此，粒子的發生會更被抑止，而且氧氣體Gf與 TEOS氣體Gs的利用效率也會提升，因此成膜速度也會 提升。藉此’可以快速的成膜速度來形成膜質佳的膜。如 此’在本實施形態中亦可取得與第1實施形態同樣的效 果。 並且，在本實施形態的電漿CVD裝置60中是設置第 2原料氣體放出部7〇 ’另外供給TEOS氣體Gs，由比氣 -35- 200917910 體放射部6 2更靠近基板平台3 4 (基板3 6)的位置來供給 TEOS氣體Gs，藉此可往基板平台34的表面34a全面均 一地放出TEOS氣體Gs。因此，可提高成膜速度的均一 性。 而且，在本實施形態的電漿CVD裝置60中是將氧氣 體Gf供給至氣體放射部62，所以也不會有被供給至氣體 放射部62的氣體氣體放射口 66的氣體成份的一部份堆積 的情況。因此，粒子的發生會被抑止，且氣體放射部62 的維修亦可簡素化。 又，本實施形態的電漿C V D裝置6 0的成膜方法也是 從設於天線元件3 2的間隙3 3之各第2原料氣體放出構件 72的各孔78來由比氣體放射部62更靠近基板平台34的 位置放出TEOS氣體Gs，因此天線元件32的表面37a的 周圍會自TEOS氣體Gs隔離，而供給氧氣體Gf及TEOS 氣體Gs。並且，Si02(反應生成物）也是比天線陣列30更 靠基板36側生成，因此可更抑止Si02附著於天線元件32 的表面3 7a。藉此，粒子的發生會更被抑止，且氧氣體Gf 及TEOS氣體Gs的利用效率也會提升，因此成膜速度亦 可使提升。如此，與第1實施形態同様，附著於天線元件 32的表面37a的情況會被抑止，可取得與第1實施形態 同樣的效果。 又，本實施形態中是在基板36的表面36a附近生成 氧氣體Gf(反應活性種氣體）與TEOS氣體Gs的均一混合 氣體。因此，在基板36的表面’例如可均一地形成Si02 -36- 200917910 膜。亦即，可形成膜厚均一性佳的S i Ο 2膜。 又，可藉由天線陣列30來生成均一的電漿，因此即 使基板例如爲1 m X 1 m程度的大小，還是可形成膜厚均一 性佳的S i 〇 2膜。 另外，在本實施形態中亦可如第1實施形態那樣，取 代第1氣體供給部26，設置原料氣體供給部（未圖示），取 代第2氣體供給部28，設置第3氣體供給部（未圖示）。此 情況，原料氣體供給部及第3氣體供給部的構成是與第1 實施形態同樣。 在如此的構成中是藉由第3氣體供給部來從氣體放射 部62的氣體放射口 44使未被利用於成膜的氣體（第3氣 體）在天線元件32的長度方向的全域供給至天線元件32 的表面37a，擴散於反應室39內。並且，使從原料氣體 供給部經由第2原料氣體放出部70所供給的原料氣體以 一定的流速流入反應室39內。如此，在原料氣體（氧氣體 (第1原料氣體）、及TEOS氣體（第2原料氣體）的混合氣 體）及氣體（第3氣體）被供給至反應室39內的狀態下，利 用天線陣列30來生成電槳。藉此，取得氧自由基，活化 TEOS氣體，而於基板36的表面36a形成Si02膜。 此情況中是由設於天線陣列3 0的間隙3 3之各第2原 料氣體放出部7 2的各孔7 8來來從天線元件3 2間的間隙 3 3使原料氣體有別於氣體（第3氣體）供給。更在天線元件 32的表面37a的周圍供給氣體，而使天線元件32的表面 3：7a的周圍自原料氣體隔離，在天線元件32的表面37a -37- 200917910 的周圍不會有被供給原料氣體的情況。因此，在天線元件 32的表面37a附著或堆積原料氣體的情況會被抑止。藉 此’粒子的發生會被抑止’且成膜速度也可使提升。 如此’取代第2氣體供給部28，設置原料氣體供給 部（未圖示）’由第2原料氣體放出部70來供給原料氣體 的構成’或取代第1氣體供給部26，設置第3氣體供給 部（未圖示）的構成時，亦可取得與第1實施形態同樣的效 果’亦即可以快速的成膜速度來形成膜質佳的膜。 上述無論哪個實施形態的CVD裝置皆是以在基板36 的表面36a形成Si02膜的裝置爲例來進行説明，但本發 明的電漿處理裝置並非限於此。本發明的電漿處理裝置是 可利用於半導體元件、液晶顯示面板或電漿顯示器面板等 的平板顯示器靣板、及太陽電池等的各種膜的成膜。又， 本發明的電漿處理裝置亦可作爲蝕刻裝置使用，且亦可使 用於基板平台的洗滌處理。 又’上述無論哪個實施形態的CVD裝置皆是藉由使 用配置有複數個單極天線的天線陣列30作爲電漿生成 部，使局部存在於天線陣列3 0附近來生成電槳。藉由此 構成，可在電漿未被直接暴露於基板平台34所載置的基 板3 6的狀態下，使基板3 6與天線陣列3 0的距離比較接 近配置。藉此，對於在天線陣列3 0附近所被激勵的氧自 由基（反應活性種）的激勵壽命而言’可使天線陣列30與 基板3 6的距離充分接近。亦即’可在氧自由基（反應活性 種）充分激勵的狀態下到達基板的表面。 -38- 200917910 又，上述的哪個CVD裝置皆是爲了在基板36的表面 36a形成SiCh膜’而使用氧氣體Gf(第1原料氣體）及 TEOS氣體Gs(第2原料氣體）的2種類的氣體來説明，但 本發明並非限於此。第1原料氣體及第2原料氣體是按照 所形成的膜種類來適當選擇所被使用的氣體種類及數量。 另外’第1原料氣體是在暴露於天線元件32的表面37a 時’附著物不會形成於其表面37a者，或表面37a的附著 量比第2原料氣體更少者即可。 又’第1原料氣體’除了氧氣體以外，例如可使用氮 氣體、氫氣體及氬氣體。又’第2原料氣體，爲使用供以 开夕成弟1原料乘1體以外的膜的氣體，例如使用含金屬化合 物的氣體。 另外’例如在形成矽膜時’第1原料氣體爲使用氫氣 體’第2原料氣體爲使用矽烷氣體。此情況亦可取得本發 明的效果。 又’例如對於成膜或蝕刻等’混合2種類的氣體來使 用時，只要在天線元件表面的周圍不供給含附著甚至堆積 於該天線元件表面的成份之氣體的情況下由天線元件的間 隙來供給如此的氣體即可’所使用的氣體種類並無特別限 定。 以上，詳細說明有關本發明的電漿處理裝置，但本發 明並非限於上述實施形態，只要不脫離本發明的主旨範 圍’當然亦可實施各種的改良及變更。 -39- 200917910 【圖式簡單說明】 圖1是表示本發明的電漿處理裝置的第1實施形態的 電漿CVD裝置的構成圖。 圖2是表示本實施形態的電漿cvd裝置的天線陣列 的模式平面圖。 圖3是表示本發明的電漿處理裝置的第2實施形態的 電漿CVD裝置的構成圖。 圖4是表示本發明的電漿處理裝置的第3實施形態的 電漿CVD裝置的構成圖。 圖5 (a)是表示本發明的電漿處理裝置的第3實施形態 的電獎CVD裝置的第2原料氣體放出部之一例的模式立 體圖，（b)是表示圖5(a)所示的第2原料氣體放出部的第2 原料氣體放出構件的模式剖面圖，（c)是表示圖5 (a)所示 的第2原料氣體放出部的第2原料氣體放出構件的其他例 的模式剖面圖。 圖6是表示以往的電漿CVD裝置的構成圖。 【主要元件符號說明】 10、50、60、100:電漿 CVD 裝置（CVD 裝置） 1 2 :控制部 14 :分配器 1 6 :阻抗整合器 1 8 :反應容器 22 :導入口 -40- 200917910 23 :氣體供給管 2 4 :排氣口 2 5 :排氣管 26 :第1氣體供給部 2 7 :真空排氣部 28 :第2氣體供給部 40、52、62 :氣體放射部 3 0 :天線陣列 3 2 :天線元件 3 3 :間隙 3 4 :基板平台 3 6 :基板 3 8 :氣體分散室 39 :反應室 70 :第2原料氣體放出部 -41 -Gf. As described above, in a state where the oxygen gas Gf and the TEOS gas are supplied into the reaction chamber 39, the plasma is generated by the antenna array 30. Thereby, an oxygen radical is obtained and the TEOS gas is activated, and an SiO 2 film is formed on the surface 36a of the substrate 36. In the plasma CVD apparatus 50 of the present embodiment, the TEOS gas Gs is supplied from the gap 3 3 between the antenna elements 32 and the gap 33 between the antenna element 32 and the wall surface of the reaction container 18 via the flow path 58. On the other hand, around the surface 37a of the antenna element 32, the oxygen gas Gf is supplied from the gas radiation plate 52, and the periphery of the surface 37a of the antenna element 32 is isolated from the TEO S gas Gs. Therefore, adhesion or accumulation on the surface 37a of the antenna element 32 can be suppressed. Thereby, the occurrence of particles is suppressed, and the film formation speed can be increased. Therefore, a film having a good film quality can be formed at a rapid film formation speed. Further, since the uniform plasma can be generated by the antenna array 30, even when the substrate has a size of, for example, about 1 m × 1 m, an Si 2 film or the like can be formed, for example, with an excellent film quality and a rapid film formation speed. Further, in the plasma CVD apparatus 50 of the present embodiment, the oxygen gas Gf is supplied to the gas radiation portion 52, so that a part of the gas emission port 56 does not accumulate. Therefore, the occurrence of particles is suppressed, and the maintenance of the gas radiation portion 52 can be simplified. Further, in the film formation method of the plasma CVD apparatus 50 of the present embodiment, TEOS is also isolated from the periphery of the surface 37a of the antenna element 32. Since the gas Gs is supplied to the TEOS gas Gs, the surface of the antenna element 32 is 307-200917910, and the surface of the antenna element 32 is suppressed, and the same effect as that of the first embodiment can be obtained. In addition, in the first embodiment, the third gas supply unit (not shown) may be provided instead of the first gas supply unit 26, and the raw material gas supply may be provided instead of the second gas supply unit 28. The structure of the department (not shown). In this case, the configuration of the material gas supply unit and the third gas supply unit is the same as that of the first embodiment. In such a configuration, the raw material gas supply unit supplies the raw material from the gap 33 between the antenna elements 32 and the gas discharge port 56 of the gap 3 3 between the antenna element 32 and the wall surface of the reaction container 18 via the flow path 58. The gas flows into the reaction chamber 39 at a constant flow rate. Further, the third gas supply unit supplies the gas (the third gas) not used for film formation to the antenna in the longitudinal direction of the antenna element 32 from the gas radiation port 54 integrated with the arrangement position of the antenna element 32. The surface 3 7 a of the element 3 2 is diffused into the reaction chamber 39. In the state where the source gas (the mixed gas of the oxygen gas (the first material gas) and the TEOS gas (the second material gas)) and the gas (the third gas) are supplied into the reaction chamber 39, the antenna array 3 is used. 0 to generate plasma. Thereby, the oxygen free radical is activated to activate the TEOS gas, and a Si〇2 film is formed on the surface 36a of the substrate 36. In this case, the gas is supplied to the periphery of the surface 37a of the antenna element 32, and the periphery of the surface 37a of the antenna element 32 is isolated from the material gas. No material gas is supplied around the surface 37a of the antenna element 32. Case. Therefore, it is possible to suppress the adhesion or accumulation of the material gas to the surface 37a of the antenna element -31 - 200917910. Thereby, the occurrence of particles is suppressed, and the film formation speed can be increased. In addition to the second gas supply unit 28, a material gas supply unit (not shown) is provided, and instead of the first gas supply unit 26, a third gas supply unit (not shown) is provided, and the first gas supply unit (not shown) can be obtained. The same effect as in the embodiment is that a film having a good film quality can be formed at a rapid film formation speed. Next, a third embodiment of the present invention will be described. Fig. 4 is a block diagram showing a charge CVD apparatus according to a third embodiment of the plasma processing apparatus of the present invention. Fig. 5 (a) is a schematic perspective view showing an example of a second material gas discharge portion of the plasma CVD apparatus according to the third embodiment of the plasma processing apparatus of the present invention, and Fig. 5 (a) is a view of Fig. 5 (a) A schematic cross-sectional view of the second material gas discharge member of the second material gas discharge unit, and (c) is a schematic cross section of another example of the second material gas discharge member of the second material gas discharge unit shown in Fig. 5(a). Figure. In the present embodiment, the same components as those of the electric paddle CVD apparatus of the first embodiment shown in Figs. 1 and 2 are denoted by the same reference numerals, and detailed description thereof will be omitted. As shown in FIG. 4, the plasma CVD apparatus 60 of the present embodiment is the first gas supply unit 26 and the second gas supply unit 28 as compared with the plasma CVD apparatus 1 (see FIG. 1) of the first embodiment. The arrangement position and the configuration of the gas radiation portion 62 are different, and the point at which the second material gas discharge portion 70 is provided is different, and the other configuration is the same as that of the heat treatment device 10 of the first embodiment, and the detailed configuration thereof is detailed. The description is omitted. In the plasma Cv D device 60 of the present embodiment, the first gas supply -32 - 200917910 portion 26 is connected to the reaction container 18 via the gas supply pipe 23. The oxygen gas Gf is supplied from the first gas supply unit 26 to the gas separation chamber 38. In addition, the gas radiation portion 62 of the present embodiment differs from the gas radiation portion 40 (see FIG. 1) of the first embodiment in that the flow path 46 is not formed, and the other configuration is the same as the first embodiment. The gas radiation portion 40 (see Fig. 1) of the form has the same configuration. In the present embodiment, the reaction chamber 18 is partitioned into two spaces by the gas radiation portion 62, and the space on the upper wall 18a side of the gas radiation portion 62 is the gas dispersion chamber 3, and the gas radiation portion 5 The space on the side of the lower wall 1 8 b of 2 is the reaction chamber 39. In the gas-emitting portion 62 of the present embodiment, the oxygen gas Gf (first material gas) introduced into the gas separation chamber 38 from the first gas supply unit 26 is diffused into the reaction chamber 39 over a wide area. The second material gas discharge unit 70 of the present embodiment has the TEOS gas Gs (the second material gas) from the gas emission port located in the gap 33 of the antenna array 30 during the flow of the oxygen gas Gf (first material gas). The function released into the reaction chamber 39. As shown in Fig. 5 (a), the second material gas discharge unit 70 includes a second material gas discharge member 72, connection pipes 74a and 74b, and a connection pipe 76, and is provided below the gas radiation portion 62. The second material gas releasing member 72 is composed of a tubular member bent at both end portions thereof, and a plurality of holes 78 are formed on the circumferential surface opposite to the side bent to the inner side (see FIG. 5(b)). The hole 78 is opened to the surface 34a of the substrate stage 34 along the longitudinal direction of the second material gas discharge member 72, and has a predetermined size. This hole 78 discharges the second raw material gas from -33 to 200917910. In the second material gas discharge portion 70, the second material gas discharge member 7 2 is provided with a gap 7 3 at a predetermined interval, for example, seven arrays are arranged. An antenna element 32 is disposed at a position of each gap 73. In each of the second material gas releasing members 72, the portions bent to the inner side are respectively inserted into the holes 64 formed in the gas releasing plate 42, and protrude from the gas releasing plate 42 to the upper side. Further, the ends of the respective second material gas discharge members 72 are connected by the connection pipes 74a and 74b, respectively. Further, a connecting pipe 76 is connected to the connecting pipe 74b. The second gas supply unit 28 that supplies the second material gas is connected to one of the connection pipes 76 (see Fig. 4). Further, in the second material gas discharge unit 70, the second material gas discharge member 72, the connection pipes 74a and 74b, and the connection pipe 76 are all connected. When the second material gas supply unit 28 supplies the TEOS gas Gs by the second gas supply unit 28, the TEOS gas Gs is ejected from the respective holes 78 of the respective second material gas discharge members 72 to the substrate stage 34. Further, as shown in Fig. 5 (a), the second material gas discharge portion 70 is such that the holes 7 are able to face the substrate platform 34 and reach the gap 3 3 of the antenna array 3, and the second material is placed. The gas discharge member 72 is disposed in the reaction container 18. By this configuration, in the present embodiment, the TEOS can be made closer to the surface 34a of the substrate platform 34 (the surface 36a of the substrate 36) by the gap 3 3 ' of the antenna array 30 and closer to the gas radiation portion 62. The gas Gs is supplied to the reaction chamber 39. Also in the present embodiment, plasma is generated by the antenna array 30 in a state where the oxygen gas Gf and the TEOS gas are supplied into the reaction chamber 39. -34- 200917910 Thereby, oxygen radicals are taken and TEOS gas is activated to form a Si〇2 film on the surface 36a of the substrate 36. Further, in the second material gas discharge unit 70, the hole 78 of the second material gas discharge member 72 is formed so that the TEOS gas Gs can be uniformly discharged to the surface 34a of the substrate stage 34 (the surface 36a of the substrate 36). However, there is no particular limitation on the shape and arrangement pattern. For example, as shown in Fig. 5(c), the holes 78a and 78b can be formed at positions facing each other in the cross section of the tube orthogonal to the longitudinal direction on the circumferential surface on the lower side of the second material gas releasing member 72a. In the plasma CVD apparatus 60 of the present embodiment, since the TEOS gas Gs is emitted from the respective holes 78 of the respective second material gas discharge portions 72 provided in the gap 3 3 of the antenna array 30, the antenna element 32 is provided. There is no inflow of TEOS gas Gs around the surface 3. Further, the oxygen gas Gf is supplied from the gas discharge port around the surface 37a of the antenna element 32. Therefore, the case where the S i 〇 2 generated by the reaction of the oxygen gas Gf and the TEOS gas Gs adheres or accumulates on the surface 37a of the antenna element 32 is more suppressed. Thereby, the occurrence of particles is further suppressed, and the utilization efficiency of the oxygen gas Gf and the TEOS gas Gs is also increased, so that the film formation speed is also increased. Thereby, a film having a good film quality can be formed at a rapid film formation speed. Thus, in the present embodiment, the same effects as those of the first embodiment can be obtained. Further, in the plasma CVD apparatus 60 of the present embodiment, the second material gas discharge unit 7 〇 ' is additionally supplied with the TEOS gas Gs, and is closer to the substrate stage 3 4 by the specific gas-35-200917910 body radiation portion 6 2 (substrate 3) The position of 6) is supplied to the TEOS gas Gs, whereby the TEOS gas Gs can be uniformly and uniformly discharged to the surface 34a of the substrate stage 34. Therefore, the uniformity of the film formation speed can be improved. Further, in the plasma CVD apparatus 60 of the present embodiment, since the oxygen gas Gf is supplied to the gas radiation portion 62, there is no part of the gas component of the gas gas radiation port 66 supplied to the gas radiation portion 62. The situation of accumulation. Therefore, the occurrence of particles is suppressed, and the maintenance of the gas radiation portion 62 can be simplified. Further, the film forming method of the plasma CVD apparatus 60 of the present embodiment is also closer to the substrate than the gas radiation portion 62 from the respective holes 78 of the respective second material gas discharge members 72 provided in the gap 3 3 of the antenna element 3 2 . Since the TEOS gas Gs is emitted from the position of the stage 34, the periphery of the surface 37a of the antenna element 32 is isolated from the TEOS gas Gs, and the oxygen gas Gf and the TEOS gas Gs are supplied. Further, since SiO 2 (reaction product) is also generated on the side of the substrate 36 than the antenna array 30, it is possible to further suppress the adhesion of SiO 2 to the surface 37a of the antenna element 32. Thereby, the occurrence of particles is further suppressed, and the utilization efficiency of the oxygen gas Gf and the TEOS gas Gs is also increased, so that the film formation speed can be improved. As described in the first embodiment, the adhesion to the surface 37a of the antenna element 32 is suppressed, and the same effects as those of the first embodiment can be obtained. Further, in the present embodiment, a uniform mixed gas of oxygen gas Gf (reactive species gas) and TEOS gas Gs is generated in the vicinity of the surface 36a of the substrate 36. Therefore, a SiO 2 -36 - 200917910 film can be uniformly formed on the surface ' of the substrate 36, for example. That is, a Si 2 film having a uniform film thickness can be formed. Further, since the uniform plasma can be generated by the antenna array 30, even if the substrate has a size of, for example, about 1 m × 1 m, it is possible to form a Si 2 film having a uniform film thickness. In the present embodiment, as in the first embodiment, a material gas supply unit (not shown) may be provided instead of the first gas supply unit 26, and a third gas supply unit may be provided instead of the second gas supply unit 28. Not shown). In this case, the configuration of the material gas supply unit and the third gas supply unit is the same as that of the first embodiment. In such a configuration, the third gas supply unit supplies the gas (third gas) not used for film formation to the antenna in the longitudinal direction of the antenna element 32 from the gas radiation port 44 of the gas radiation portion 62. The surface 37a of the element 32 diffuses into the reaction chamber 39. Then, the material gas supplied from the material gas supply unit via the second material gas discharge unit 70 flows into the reaction chamber 39 at a constant flow rate. In the state where the source gas (the mixed gas of the oxygen gas (the first material gas) and the TEOS gas (the second material gas)) and the gas (the third gas) are supplied into the reaction chamber 39, the antenna array 30 is used. To generate an electric paddle. Thereby, oxygen radicals are taken and the TEOS gas is activated to form an SiO 2 film on the surface 36a of the substrate 36. In this case, the source gas is different from the gas from the gap 3 3 between the antenna elements 3 2 by the respective holes 7 of the second material gas discharge portions 7 2 provided in the gap 3 3 of the antenna array 30 (the 3 gas) supply. Further, gas is supplied around the surface 37a of the antenna element 32, and the periphery of the surface 3: 7a of the antenna element 32 is isolated from the material gas, and no material gas is supplied around the surface 37a - 37 - 200917910 of the antenna element 32. Case. Therefore, the case where the material gas adheres or accumulates on the surface 37a of the antenna element 32 is suppressed. By this, the occurrence of the particles is suppressed, and the film formation speed can also be improved. In the second gas supply unit 28, the raw material gas supply unit (not shown) is provided with the configuration of the raw material gas by the second raw material gas discharge unit 70, or the third gas supply unit 26 is provided instead of the first gas supply unit 26. In the configuration of the portion (not shown), the same effect as in the first embodiment can be obtained, that is, a film having a good film quality can be formed at a rapid film formation speed. The CVD apparatus of any of the above embodiments is described as an example in which a SiO 2 film is formed on the surface 36a of the substrate 36. However, the plasma processing apparatus of the present invention is not limited thereto. The plasma processing apparatus of the present invention is useful for forming a film of a flat panel display panel such as a semiconductor element, a liquid crystal display panel or a plasma display panel, and a solar cell. Further, the plasma processing apparatus of the present invention can also be used as an etching apparatus, and can also be used for washing treatment of a substrate platform. Further, in any of the CVD apparatuses of the above-described embodiments, the antenna array 30 in which a plurality of monopole antennas are disposed is used as a plasma generating portion, and localized in the vicinity of the antenna array 30 to generate an electric paddle. With this configuration, the distance between the substrate 36 and the antenna array 30 can be relatively close to each other in a state where the plasma is not directly exposed to the substrate 36 placed on the substrate stage 34. Thereby, the distance between the antenna array 30 and the substrate 36 can be sufficiently close to the excitation lifetime of the oxygen radical (reactive species) excited in the vicinity of the antenna array 30. That is, it can reach the surface of the substrate in a state where the oxygen radical (reactive species) is sufficiently excited. -38- 200917910 Further, which of the above-described CVD apparatuses uses two types of gases, oxygen gas Gf (first material gas) and TEOS gas Gs (second material gas), in order to form the SiCh film ' on the surface 36a of the substrate 36. It is to be noted, but the invention is not limited thereto. The first material gas and the second material gas are appropriately selected depending on the type of film to be formed, and the type and amount of gas to be used. Further, when the first material gas is exposed to the surface 37a of the antenna element 32, the deposit is not formed on the surface 37a, or the surface 37a may be deposited in a smaller amount than the second material gas. Further, in addition to the oxygen gas, the first material gas can be, for example, a nitrogen gas, a hydrogen gas or an argon gas. Further, the second material gas is a gas obtained by using a film other than the first material, for example, a metal-containing compound. Further, for example, when a ruthenium film is formed, the first material gas is a hydrogen gas, and the second material gas is a decane gas. This situation can also achieve the effects of the present invention. Further, when a gas of two types is mixed, for example, for film formation or etching, if the gas containing a component adhering to or even deposited on the surface of the antenna element is not supplied around the surface of the antenna element, the gap of the antenna element is used. The type of gas to be used for supplying such a gas is not particularly limited. The plasma processing apparatus according to the present invention has been described in detail above, but the present invention is not limited to the above-described embodiments, and various modifications and changes can be made without departing from the spirit and scope of the invention. -39-200917910 [Brief Description of the Drawings] Fig. 1 is a configuration diagram of a plasma CVD apparatus according to a first embodiment of the plasma processing apparatus of the present invention. Fig. 2 is a schematic plan view showing an antenna array of the plasma cvd device of the embodiment. Fig. 3 is a configuration diagram of a plasma CVD apparatus according to a second embodiment of the plasma processing apparatus of the present invention. Fig. 4 is a block diagram showing a plasma CVD apparatus according to a third embodiment of the plasma processing apparatus of the present invention. Fig. 5 (a) is a schematic perspective view showing an example of a second material gas discharge portion of the electric prize CVD device according to the third embodiment of the plasma processing apparatus of the present invention, and Fig. 5 (b) is a view showing a state shown in Fig. 5 (a) A schematic cross-sectional view of the second material gas discharge member of the second material gas discharge unit, and (c) is a mode cross section showing another example of the second material gas discharge member of the second material gas discharge unit shown in Fig. 5(a). Figure. Fig. 6 is a configuration diagram showing a conventional plasma CVD apparatus. [Description of main component symbols] 10, 50, 60, 100: Plasma CVD apparatus (CVD apparatus) 1 2 : Control section 14: Distributor 1 6 : Impedance Integrator 1 8 : Reaction vessel 22 : Introduction port -40 - 200917910 23: gas supply pipe 2 4 : exhaust port 2 5 : exhaust pipe 26 : first gas supply unit 2 7 : vacuum exhaust unit 28 : second gas supply unit 40 , 52 , 62 : gas emission unit 3 0 : Antenna array 3 2 : antenna element 3 3 : gap 3 4 : substrate stage 3 6 : substrate 3 8 : gas dispersion chamber 39 : reaction chamber 70 : second material gas discharge portion - 41 -