KR100963848B1 - Capacitively coupled plasma reactor with multi laser scanning line - Google Patents

Abstract

The capacitively coupled plasma reactor having a multi-laser scanning line of the present invention is a capacitively coupled electrode assembly including a plasma reactor body, a plurality of capacitively coupled electrodes for inducing plasma discharge inside the plasma reactor body, and to supply radio frequency power. And a distribution circuit for distributing the radio frequency power provided from the main power supply to the plurality of capacitively coupled electrodes. According to the capacitively coupled plasma reactor having the multi-laser scanning line of the present invention, a large-area plasma can be generated uniformly by the plurality of capacitively coupled electrodes and the multi-laser scanning line. In parallel driving of the plurality of capacitively coupled electrodes, a current balance is automatically achieved to uniformly control the capacitive coupling of the capacitively coupled electrodes to uniformly generate high-density plasma. Since a plurality of capacitively coupled electrodes and a multi-laser scanning line can be uniformly and widely scanned on the target substrate, a large-area plasma reactor for processing a large target substrate can be easily implemented.

Laser, capacitively coupled plasma, plasma reactor, current balancing

Description

CAPACITIVELY COUPLED PLASMA REACTOR WITH MULTI LASER SCANNING LINE}

The present invention relates to a capacitively coupled plasma reactor, and more particularly, to a capacitively coupled plasma reactor having a multi-laser scanning line capable of generating a large area of plasma more uniformly, thereby improving the plasma processing efficiency for a large-area target object. It is about.

Plasma is a highly ionized gas containing the same number of positive ions and electrons. Plasma discharges are used for gas excitation to generate active gases containing ions, free radicals, atoms, molecules. Active gases are widely used in various fields and are used in various semiconductor manufacturing processes for manufacturing devices such as integrated circuit devices, liquid crystal displays, solar cells, etc., for example, etching, deposition, cleaning, and ashing. It is variously used for ashing.

There are a number of plasma sources for generating plasma, and the representative examples are capacitive coupled plasma and inductive coupled plasma using radio frequency. Capacitively coupled plasma sources have the advantage of high process productivity compared to other plasma sources due to their high capacity for precise capacitive coupling and ion control. However, when the capacitively coupled electrode is enlarged in order to process an enlarged substrate, the electrode may be deformed or damaged by deterioration of the electrode. In this case, the electric field strength may be uneven, which may result in uneven plasma density and contaminate the inside of the reactor. In the case of an inductively coupled plasma source, it is also difficult to obtain a uniform plasma density when the area of the induction coil antenna is increased.

On the other hand, various processing apparatuses using a laser have been provided. A semiconductor manufacturing process using a laser includes a photoexcited chemical vapor deposition process. In addition, various processes such as deposition, etching, annealing, and cleaning of the substrate to be processed are performed by using a laser in various processes.

In recent years, the semiconductor manufacturing industry has been further improved due to various factors such as ultra miniaturization of semiconductor devices, the enlargement of silicon wafer substrates or substrates to be processed such as glass or plastic substrates for manufacturing semiconductor circuits, and the development of new materials to be processed. Plasma treatment technology is required. In particular, there is a need for improved plasma sources and plasma processing techniques that have good processing capabilities for large area substrates.

It is an object of the present invention to provide a capacitively coupled plasma reactor having a multi-laser scanning line capable of generating and maintaining a large area of plasma uniformly.

Another object of the present invention is to provide a capacitively coupled plasma reactor having multiple laser scanning lines capable of uniformly controlling capacitive coupling of capacitively coupled electrodes to uniformly generate high density plasma.

It is still another object of the present invention to provide a capacitively coupled plasma reactor having a multi-laser scanning line capable of uniformly controlling the current supply of the capacitively coupled electrode to uniformly generate high density plasma.

It is still another object of the present invention to provide a capacitively coupled plasma reactor having a multi-laser scanning line that is easy to make a large area and uniformly generate a high density plasma.

One aspect of the present invention for achieving the above technical problem relates to a capacitively coupled plasma reactor having a multi-laser scanning line. A capacitively coupled plasma reactor having multiple laser scanning lines of the present invention comprises: a reactor body; A capacitively coupled electrode assembly including a plurality of capacitively coupled electrodes to induce plasma discharge in the reactor body; A main power supply for supplying radio frequency power to said plurality of capacitively coupled electrodes; And a laser source for constructing a multi-laser scanning line consisting of a plurality of laser scan lines in the reactor body.

In one embodiment, a distribution circuit for distributing the radio frequency power provided from the main power source to the plurality of capacitively coupled electrodes.

In one embodiment, an impedance matcher is arranged between the main power supply and the distribution circuit to perform impedance matching.

In one embodiment, the distribution circuit includes a current balancing circuit for adjusting the balance of the current supplied to the plurality of capacitively coupled electrodes.

In one embodiment, the current balancing circuit includes a plurality of transformers for balancing the current by driving the plurality of capacitive coupling electrodes, the primary side of the plurality of transformers are connected in series, the secondary side is a plurality of capacitive coupling It is connected to correspond to the electrode.

In an embodiment, the secondary sides of the plurality of transformers each include a grounded intermediate tab, one end of the secondary side outputs a constant voltage and the other end of a negative voltage, and the constant voltage is a constant voltage of the plurality of capacitive coupling electrodes. The negative voltage as an electrode is provided to negative voltage electrodes of the plurality of capacitively coupled electrodes.

In one embodiment, the current balancing circuit includes a voltage level adjusting circuit that can vary the current balancing adjusting range.

In one embodiment, the current balancing circuit comprises a compensation circuit for compensation of leakage current.

In one embodiment, the current balancing circuit includes a protection circuit for preventing damage due to transient voltage.

In one embodiment, the capacitively coupled electrode assembly includes an electrode mounting plate on which the plurality of capacitively coupled electrodes are mounted.

In one embodiment, the electrode mounting plate includes a plurality of gas injection holes, and includes a gas supply unit for supplying gas into the reactor body through the gas injection holes.

In one embodiment, the plurality of capacitively coupled electrodes includes a plurality of gas injection holes.

In one embodiment, the gas supply unit is not connected to the first gas supply path and the plurality of gas injection holes for supplying gas to the inside of the reactor body through a plurality of gas injection holes connected to the plurality of gas injection holes. And a second gas supply path for supplying gas into the reactor body through another gas injection hole.

In one embodiment, a plurality of gas supply pipe having a plurality of gas injection holes 26 is installed across the interior of the reactor body opposite to the support on which the substrate to be processed is placed in the reactor body, A plurality of capacitively coupled electrodes are installed across the interior of the reactor body between a gas supply line and the support.

In one embodiment, the plurality of capacitively coupled electrode is composed of a hollow tube structure formed with a plurality of gas injection holes to function as a gas supply unit for supplying the reaction gas into the reactor body.

In one embodiment, the reactor body is provided with a support on which a substrate to be processed is placed, and the support is configured as either biased or unbiased.

In one embodiment, the support is biased by a single frequency power supply or two or more different frequency power supplies.

In one embodiment, the support includes an electrostatic chuck.

In one embodiment, the support comprises a heater.

In one embodiment, the support has a structure that is linearly or rotationally movable parallel to the substrate to be processed, and includes a drive mechanism for linearly or rotationally moving the support.

In one embodiment, the plurality of capacitively coupled electrodes includes a conductor region and an insulator region.

In one embodiment, the capacitively coupled electrode assembly includes an insulating layer configured between the plurality of capacitively coupled electrodes.

In an embodiment, the plurality of capacitively coupled electrodes includes a plurality of constant voltage electrodes and a plurality of negative voltage electrodes, and the arrangement structure of the constant voltage electrode and the negative voltage electrode is an alternating linear arrangement structure, an array having a matrix form. And at least one array structure selected from among structures, mutually alternating spiral array structures, and mutually alternating concentric array structures.

In an embodiment, the constant voltage electrode and the plurality of negative voltage electrodes include at least one structure selected from a barrier structure, a plate structure, a protrusion structure, a pillar structure, an annular structure, a spiral structure, and a linear structure.

In one embodiment, the reactor body includes a laser transmission window for scanning a laser beam therein, and the laser source allows the laser beam to be scanned into the reactor body through the laser transmission window so that the multi-laser. One or more laser sources for forming the scanning line.

In one embodiment, the laser transmission window comprises two windows configured to face the side wall of the reactor body, wherein the laser source comprises a laser beam generated from the one or more laser sources between the two windows. It includes a plurality of reflectors reflecting to form the multi-laser scanning line.

In one embodiment, the multi-laser scanning line is a structure positioned between the electric field formed between the plurality of capacitively coupled electrodes, between the plurality of capacitively coupled electrodes and the support on which the substrate to be processed provided in the reactor body is placed. At least one selected from among a structure located in the structure, or a structure located between the gas injection hole for introducing the reaction gas into the reactor body and the plurality of capacitive coupling electrode.

In one embodiment, the relative arrangement structure of the multi-laser scanning line and the plurality of capacitively coupled electrodes is characterized in that the reaction gas introduced into the reactor body is the electrical energy by the capacitively coupled electrode and the thermal energy by the multi-laser scanning line A structure that accepts a mixed structure, a structure in which a reaction gas introduced into the reactor body first receives electrical energy transferred from the plurality of capacitively coupled electrodes, or a reaction gas introduced into the reactor body by the multi-laser scanning line. It includes one or more structures selected from the structures that first receive thermal energy.

According to the capacitively coupled plasma reactor having the multi-laser scanning line of the present invention, a large-area plasma can be generated uniformly by the plurality of capacitively coupled electrodes and the multi-laser scanning line. In parallel driving of the plurality of capacitively coupled electrodes, a current balance is automatically achieved to uniformly control the capacitive coupling of the capacitively coupled electrodes to uniformly generate high-density plasma. Since a plurality of capacitively coupled electrodes and a multi-laser scanning line can be uniformly and widely scanned on the target substrate, a large-area plasma reactor for processing a large target substrate can be easily implemented.

In order to fully understand the present invention, preferred embodiments of the present invention will be described with reference to the accompanying drawings. Embodiment of the present invention may be modified in various forms, the scope of the invention should not be construed as limited to the embodiments described in detail below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Therefore, the shape of the elements in the drawings and the like may be exaggerated to emphasize a more clear description. It should be noted that the same members in each drawing are sometimes shown with the same reference numerals. Detailed descriptions of well-known functions and constructions which may be unnecessarily obscured by the gist of the present invention are omitted.

1 is a view showing a plasma reactor according to a preferred embodiment of the present invention.

Referring to FIG. 1, an inductively coupled plasma reactor 10 according to a preferred embodiment of the present invention includes a plasma reactor body 11, a gas supply unit 20, a capacitively coupled electrode assembly 30, and a laser source 80. Include. The reactor body 11 is provided with a support 12 on which the substrate 13 to be processed is placed. At the bottom of the reactor body 11 is a capacitively coupled electrode assembly 30. The gas supply unit 20 is configured under the capacitively coupled electrode assembly 30 to supply the reaction gas provided from the gas park (not shown) through the plurality of gas injection holes 32 configured in the capacitively coupled electrode assembly 30. It feeds into the inside of (11). The radio frequency power generated from the main power supply 40 is supplied to the plurality of capacitively coupled electrodes 31 and 33 provided in the capacitively coupled electrode assembly 30 through the impedance matcher 41 and the distribution circuit 50. . The laser source 80 provides a laser for constructing a multi-laser scanning line consisting of a plurality of laser scan lines 82 inside the reactor body 11. The plasma generated by the capacitively coupled electrode assembly 30 and the multi-laser scanning line is generated inside the reactor body 11 to perform substrate processing on the substrate 13 to be processed.

The plasma reactor 10 is provided with a support body 12 on which the reactor body 11 and the substrate 13 to be processed are placed. The reactor body 11 may be made of metal material such as aluminum, stainless steel, copper or coated metal, for example anodized aluminum or nickel plated aluminum. Alternatively, it may be made of refractory metal. As another alternative, it is also possible to fabricate the reactor body 11 in whole or in part with an electrically insulating material such as quartz, ceramic. As such, the reactor body 11 may be made of any material suitable for carrying out the intended plasma process. The structure of the reactor body 11 may have a structure suitable for uniform generation of the plasma, for example, a circular structure or a square structure, or any other structure depending on the substrate 13 to be processed.

The substrate 13 to be processed is, for example, substrates such as wafer substrates, glass substrates, plastic substrates, etc. for the manufacture of various devices such as semiconductor devices, display devices, solar cells, and the like. The plasma reactor 10 is connected to a vacuum pump (not shown). The plasma reactor 10 is subjected to plasma processing on the substrate 13 under low pressure below atmospheric pressure. However, the plasma reactor 10 of the present invention may also be implemented as an atmospheric pressure plasma processing system for treating a substrate under atmospheric pressure.

2 is a partial cross-sectional view of the bottom of the reactor showing a gas supply configured at the bottom of the capacitively coupled electrode mounting plate.

Referring to FIG. 2, the gas supply unit 20 is installed under the capacitively coupled electrode assembly 30. The gas supply unit 20 includes a gas inlet 21 connected to a gas supply source (not shown), one or more gas distribution plates 22, and a plurality of gas inlets 23. The plurality of gas injection holes 23 correspond to the plurality of gas injection holes 32 of the electrode mounting plate 34. The reaction gas input through the gas inlet 21 is evenly distributed by the one or more gas distribution plates 22 and the reactor body 11 through the plurality of gas inlets 23 and the plurality of gas injection holes 32 corresponding thereto. Sprayed evenly inside Although not shown in the drawings, the gas supply unit 20 may include two or more separate gas supply channels to separate different gases and supply them to the inside of the reactor body 11 to increase plasma processing efficiency.

3 is a perspective view illustrating a capacitively coupled electrode assembly, and FIG. 4 is a cross-sectional view of the capacitively coupled electrode of FIG. 3.

Referring to FIG. 3, the capacitively coupled electrode assembly 30 includes a plurality of capacitively coupled electrodes 31 and 33 for inducing plasma discharge by electrical capacitive coupling in the reactor body 11. The plurality of capacitively coupled electrodes 31 and 33 are mounted on the electrode mounting plate 34. The electrode mounting plate 34 may be installed to form a lower portion of the reactor body 11. The plurality of capacitively coupled electrodes 31 and 33 have a structure in which a plurality of constant voltage electrodes 33 and a negative voltage electrode 31 that linearly cross the lower portion of the reactor body 11 are alternately arranged in parallel with an interval. Have The plurality of capacitively coupled electrodes 31 and 33 have a linear barrier structure protruding upward from the electrode mounting plate 34. As illustrated in FIG. 4, the plurality of capacitive coupling electrodes 31 and 33 may be configured of a conductor region 71 and an insulator region 71 surrounding the outside thereof. Alternatively, only the conductor region 71 may be provided. The shape and arrangement of the plurality of capacitively coupled electrodes 31 and 33 may be variously modified as described below.

The electrode mounting plate 34 includes a plurality of gas injection holes 32. The plurality of gas injection holes 32 are arranged in the longitudinal direction at regular intervals between the plurality of capacitive coupling electrodes 31 and 33. The electrode mounting plate 34 may be made of a metal, a nonmetal, or a mixed material thereof. When the electrode mounting plate 34 is made of a metal material, the electrode mounting plate 34 has an electrically insulating structure between the plurality of capacitive coupling electrodes 31 and 33. The electrode mounting plate 34 is installed to constitute the bottom of the reactor body 11, but may be installed along the sidewall of the reactor body 11 to increase the plasma treatment efficiency. Or it may be installed on both the bottom and side walls. Although not shown in detail, the electrode mounting plate 34 may include a cooling channel or a heating channel for proper temperature control.

5 is a partial cross-sectional view showing a modification of the capacitively coupled electrode configured with the gas hole.

Referring to FIG. 5, in the capacitive coupling electrodes 31 and 33, a plurality of gas injection holes 73 may be configured along the length direction. Some gas injection holes 32-1 of the electrode mounting plate 34 are connected to the gas injection holes 73 of the capacitive coupling electrodes 31 and 33, and some of the gas injection holes 32-2 are not connected. . The gas supply unit 20 is provided through a part of the gas injection holes 32-2 which are different from the first gas supply path for supplying the first gas into the reactor body 11 through the part of the gas injection holes 32-1. It may be provided with a second gas supply path for supplying gas into the reactor body (11). The first and second gas supply paths of the gas supply unit 20 are configured to separate and supply different types of first and second gases as independent gas supply paths. Although not shown in the drawings in detail, as another example, a single gas supply channel for supplying the reaction gas into the inside of the reactor body 11 is provided only through the gas injection holes 73 provided in the capacitive coupling electrodes 31 and 33. It is also possible.

6 to 8 are views for explaining various configuration methods of a multi-laser scanning line.

6 to 8, the reactor body 11 has laser transmission windows 86 and 87 for scanning the laser beam therein. The laser transmissive windows 86, 87 may be comprised of two windows 86, 87 configured to face the side walls of the reactor body 11. The two windows 86 and 87 may be installed to face the reactor body 11 so as to face each other, and may have a slit structure having the same length. The laser source 80 includes one or more laser sources 84. The laser source 84 scans a laser beam into the reactor body 11 through the laser transmission windows 86 and 87 to form a plurality of laser scan lines 82 inside the reactor body 11 to perform multi-laser scanning. Lines make up.

For example, as shown in FIG. 6, a plurality of laser sources 84 are arranged in proximity to the laser transmission window 86 on one side, and correspondingly, a plurality of laser sources 84 in the vicinity of the laser transmission window 87 on the other side. Laser terminations 85 may be configured. Alternatively, as shown in FIG. 7, a plurality of laser sources 84 are arranged at intervals and a plurality of reflectors 83 are disposed therebetween so that the laser beams generated from the laser sources 84 are separated by two laser transmission windows. The plurality of laser scanning lines 82 can be formed by reciprocating and reflecting with the 86 and 87 interposed therebetween. Alternatively, as shown in FIG. 8, only one laser source 84 may be configured and a plurality of reflectors 83 may be configured.

As such, the multi-laser scanning line may be configured inside the reactor body 11 using one or more laser sources 84, a plurality of reflectors 83, and one or more laser terminations 85. In this case, the plurality of laser scan lines 82 may be positioned between the plurality of capacitive coupling electrodes 31 and 33 and aligned with the plurality of gas injection holes 32. However, other various methods may be used to form the laser scanning line. And although a more detailed configuration and description have been omitted, those skilled in the art will appreciate that an optical system of a suitable structure may be used to scan a laser beam into the interior of the reactor body 11.

FIG. 9 is a diagram for describing various relative arrangement methods of a multi-laser scanning line and a capacitive coupling electrode.

As shown in FIG. 9A, a multi-laser scanning line composed of a plurality of laser scan lines 82 may take a structure positioned in an electric field formed between the plurality of capacitive coupling electrodes 31 and 33. . Alternatively, as shown in FIG. 9B, the multi-laser scanning line may be a structure positioned between the plurality of capacitively coupled electrodes 31 and 33 and the support 12 provided inside the reactor body 11. have. Alternatively, as shown in (c) of FIG. 9, the multi-laser scanning line is positioned between the gas injection hole 32 for introducing the reaction gas into the reactor body 11 and the plurality of capacitive coupling electrodes 31 and 33. In this case, the plurality of capacitive coupling electrodes 31 and 33 are spaced apart from the electrode mounting plate 34 at a predetermined interval.

The relative arrangement of the multi-laser scanning line and the plurality of capacitively coupled electrodes 31 and 33 is about which reaction gas first receives energy. That is, as illustrated in (a) of FIG. 9, the reaction gas introduced into the reactor body 11 receives the electrical energy by the capacitive coupling electrode and the thermal energy by the multi-laser scanning line. The structure can be taken. Alternatively, as illustrated in (b) of FIG. 9, the reaction gas introduced into the reactor body 11 may take the structure of first receiving electrical energy delivered from the plurality of capacitively coupled electrodes. Alternatively, as illustrated in (c) of FIG. 9, the reaction gas introduced into the reactor body 11 may take the structure of first receiving thermal energy by the multi-laser scanning line.

The relative arrangement structure of the multi-laser scanning line and the plurality of capacitive coupling electrodes 31 and 33 may be used in combination of one or more structures, and for this purpose, the laser source 84 constituting the laser source 80 may be used. The structure and arrangement of the reflector 83 and the laser termination portion 85 can be modified as appropriate.

10 illustrates various modified structures of a capacitively coupled electrode.

First, as shown in (a) of FIG. 10, the capacitive coupling electrodes 31 and 33 may have a barrier structure, the cross section of which may have a 'T' type structure, and the head portion thereof may have an electrode mounting plate 34. It may be installed to be fixed to the) or to have the reverse arrangement position. As shown in FIG. 10B, the capacitive coupling electrodes 31 and 33 may have a plate-like structure having a narrow width. As shown in (c) or (d) of FIG. 10, the capacitively coupled electrodes 31 and 33 may have a triangular or inverted triangular structure thereof. As shown in (e) to (g) of Figure 10, it may have a cylindrical rod-shaped structure, a divided elliptic structure or a rod-shaped structure of a standing elliptic structure. As such, the capacitive coupling electrodes 31 and 33 may be modified in various structures such as circular, elliptical, and polygonal structures.

11 to 21 show various modifications of the planar structure and planar arrangement of the capacitive coupling electrode.

First, as shown in FIG. 11, the plurality of constant voltage electrodes 33 and the plurality of negative voltage electrodes 31 constituting the plurality of capacitive coupling electrodes 31 and 33 are alternately arranged with each other, Gas injection holes 32 may be arranged. As shown in FIG. 12 or 13, the plurality of constant voltage electrodes 33 and the negative voltage electrodes 31 have the same electrodes arranged in the same column (or row) in a structure divided into predetermined lengths (see FIG. 12), or different electrodes. This structure may be alternately arranged (see FIG. 13). As shown in FIG. 14 or FIG. 15, the plurality of capacitively coupled electrodes 31 and 33 may be configured of a plurality of square or circular flat area electrodes arranged in a matrix form. As illustrated in FIG. 16, the plurality of capacitive coupling electrodes 31 and 33 may have a columnar structure such as a cylinder. As shown in FIGS. 17 to 21, the plurality of capacitively coupled electrodes 31 and 33 may have a flat plate spiral structure or a concentric circle structure arranged alternately with each other. In this structure, the plurality of capacitive coupling electrodes 31 and 33 may be composed of only one constant voltage electrode 33 and a negative voltage electrode 31. Alternatively, a plurality of constant voltage electrodes 33 and negative voltage electrodes 31 may be formed, but the overall arrangement may have a flat spiral structure or a concentric circle structure.

As described above, the plurality of capacitively coupled electrodes 31 and 33 may have one or more structures selected from a barrier structure, a plate structure, a protrusion structure, a pillar structure, a concentric or annular structure, a spiral structure, and a linear structure. The arrangement of the plurality of constant voltage electrodes 33 and the negative voltage electrodes 31 may also be performed in various arrangements such as an alternating linear arrangement, a matrix arrangement, an alternate spiral arrangement, and an alternate concentric arrangement. It may have one or more array structures selected from the structure. Although not shown in detail, an insulating layer may be formed between the plurality of capacitively coupled electrodes 31 and 33.

Again, referring to FIG. 1, a support 12 for supporting the substrate 13 to be processed is provided inside the reactor body 11. The support 12 is connected and biased to bias power sources 42 and 43. For example, two bias power sources 42 and 43 that supply different radio frequency power are electrically connected to and biased through the impedance matcher 44 to the support 12. The dual bias structure of the support 12 facilitates plasma generation inside the reactor body 11, and further improves plasma ion energy control to improve process yield. Alternatively, it may be modified to a single bias structure. Alternatively, the support 12 may be modified to have a zero potential without supplying a bias power supply. The substrate support 12 may include an electrostatic chuck. Alternatively, the substrate support 12 may include a heater.

Support 12 may be of a fixed type. Alternatively, the support 12 has a structure capable of linearly or rotationally moving in parallel with the substrate 13 to be processed, and includes a drive mechanism 4 for linearly or rotationally moving the support 12. This moving structure of the support 12 is for increasing the processing efficiency of the substrate 13 to be processed. An exhaust baffle 6 may be configured at an inner upper portion of the reactor body 11 to uniformly discharge the gas discharged to the gas outlet 3 configured at the upper portion of the reactor body 11.

The plurality of capacitive coupling electrodes 31 and 33 are driven by receiving the radio frequency power generated from the main power supply 40 through the impedance matcher 41 and the distribution circuit 50 to be inside the reactor body 11. Induce a capacitively coupled plasma. The main power supply 40 may be configured using a radio frequency generator capable of controlling the output power without a separate impedance matcher. The radio frequency power generated from the main power supply 40 is provided to the plurality of capacitive coupling electrodes 31 and 33 through the impedance matcher 41. To this end, a distribution circuit 50 may be provided. The distribution circuit 50 distributes and supplies the radio frequency power provided from the main power supply 40 to the plurality of capacitive coupling electrodes 31 and 33 so that the plurality of capacitive coupling electrodes 31 and 33 are driven in parallel. Preferably, distribution circuit 50 may be comprised of a current balancing circuit. The current balancing circuit automatically balances the currents supplied to the plurality of capacitive coupling electrodes 31 and 33. Therefore, not only the large-area plasma can be generated by the plurality of capacitive coupling electrodes 31 and 33, but also the large-area plasma can be automatically balanced by parallel driving of the plurality of capacitive coupling electrodes 31 and 33. Can be generated and maintained more uniformly.

22 is a diagram illustrating an example of a distribution circuit.

Referring to FIG. 22, the distribution circuit 50 includes a current balancing circuit composed of a plurality of transformers 52 which drive the plurality of capacitive coupling electrodes 31 and 33 in parallel and balance the current. The primary side of the plurality of transformers 52 is connected in series between the power input terminal to which the radio frequency is input and the ground through the impedance matcher 41, and one end of the secondary side corresponds to the plurality of capacitive coupling electrodes 31 and 33. The other end is commonly grounded. The plurality of transformers 52 equally divide the voltage between the power input terminal and the ground and output the divided plurality of divided voltages to the corresponding constant voltage electrode 33 among the plurality of capacitive coupling electrodes 31 and 33. Among the plurality of capacitively coupled electrodes 31 and 33, the negative voltage electrode 31 is commonly grounded.

Since the current flowing to the primary side of the plurality of transformers 52 is the same, the power supplied to the plurality of constant voltage electrodes 33 is also the same. When the impedance of any one of the plurality of capacitive coupling electrodes 31 and 33 is changed to change the amount of current, the plurality of transformers 52 may interact with each other to achieve a current balance. Therefore, the current supplied to the plurality of capacitive coupling electrodes 31 and 33 is continuously and automatically adjusted uniformly. In the plurality of transformers 52, the winding ratios of the primary side and the secondary side are basically set to 1: 1, but this can be changed.

Although not shown in the drawing, the distribution circuit 50 including the current balancing circuit as described above may include a protection circuit for preventing the transient voltage from occurring in the plurality of transformers 52. The protection circuit prevents the transient voltage from increasing in the transformer due to a defect such as when one of the plurality of transformers 52 is electrically open. The protection circuit of this function may be implemented by connecting a varistor to both ends of each primary side of the plurality of transformers 52, or may be implemented by using a constant voltage diode such as a Zener diode. . In addition, a compensation circuit such as a compensation capacitor 51 for compensating for leakage current may be added to each transformer 52 in the distribution circuit 50.

23-25 illustrate various variations of the distribution circuit.

Referring to FIG. 23, one variation of the distribution circuit 50 includes an intermediate tab with the secondary sides of the plurality of transformers 52 respectively grounded. Here, one end of the secondary side outputs a constant voltage and the other end of a negative voltage. The constant voltage is provided to the constant voltage electrode 33 of the plurality of capacitively coupled electrodes, and the negative voltage is provided to the negative voltage electrode 31 of the plurality of capacitively coupled electrodes.

With reference to FIGS. 24 and 25, another variation of the distribution circuit 50 can include a voltage level adjustment circuit 60 that can vary the current balancing adjustment range. The voltage level adjustment circuit 60 includes a coil 61 having a multi tap and a multi tap switching circuit 62 for connecting one of the multi taps to ground. The voltage level regulating circuit 60 applies a voltage level variable according to the switching position of the multi-tap switching circuit 62 to the distribution circuit 50, and the distribution circuit 50 is provided by the voltage level regulating circuit 60. The current balance adjustment range is varied by the voltage level determined.

FIG. 26 illustrates a gas supply unit and a capacitively coupled electrode assembly according to a modification.

Referring to FIG. 26, in one variant the reactor body 11 has a flat bottom. The inner side of the reactor body 11 has a gas supply unit 20a composed of a plurality of gas supply pipes 24. The plurality of gas supply pipes 24 are installed across the inside of the reactor body 11 to face the support 12 on which the substrate to be processed of the reactor body 11 is placed. The capacitively coupled electrodes 31 and 33 of the capacitively coupled electrode assembly 30a according to the modification are installed across the inside of the reactor body 11 between the plurality of gas supply pipes 24 and the support 12. In the plurality of gas supply pipes 24, a plurality of gas injection holes 26 are configured in the longitudinal direction so that gas is injected toward the support 12. The structure for supporting the plurality of capacitive coupling electrodes 31 and 33 may have various forms of implementation. For example, the plurality of capacitively coupled electrodes 31 and 33 are supported on the sidewall of the reactor body 11 without having the flat electrode mounting plate 34 configured under the reactor body 11 as described above. It may be replaced by a structure (not shown). The plurality of gas supply pipes 24 are connected to a gas supply source (not shown), and each gas supply pipe 24 may be provided with a gas control valve 25 for individually controlling the gas flow rate. Alternatively, the gas supply flow rate may be collectively controlled or may be configured to be controlled in a mixed manner. In this case, the gas supply may be divided into two groups to form a separate gas supply channel. It is possible to increase the uniformity of the plasma treatment by separating and supplying different gases.

FIG. 27 is a diagram for describing various relative arrangement methods of a multi-laser scanning line and a capacitive coupling electrode in one modification.

Referring to FIG. 27, the relative arrangement structure of the multi-laser scanning line and the dose coupling electrodes 31 and 33 may take various forms as described above with reference to FIG. 9. As illustrated in FIG. 27A, a multi-laser scanning line composed of a plurality of laser scan lines 82 may have a structure located in an electric field formed between the plurality of capacitive coupling electrodes 31 and 33. . Alternatively, as shown in FIG. 27B, the multi laser scanning line may be a structure positioned between the plurality of capacitively coupled electrodes 31 and 33 and the support 12 provided in the reactor body 11. have. Alternatively, as shown in FIG. 27C, the multi-laser scanning line is positioned between the gas injection hole 26 for introducing the reaction gas into the reactor body 11 and the plurality of capacitive coupling electrodes 31 and 33. The structure can be taken.

The relative arrangement structure of the multi-laser scanning line and the plurality of capacitive coupling electrodes 31 and 33 may be used in combination of one or more structures, and for this purpose, the laser source 84 constituting the laser source 80 may be used. The structure and arrangement of the reflector 83 and the laser termination portion 85 can be modified as appropriate.

28 is a diagram for describing a capacitively coupled electrode assembly according to another modification, and FIG. 29 is a cross-sectional view of the capacitively coupled electrode of FIG. 28. And FIG. 30 is a view showing a relative arrangement structure of a multi laser scanning line and a capacitive coupling electrode in another modification.

Referring to FIG. 28, a capacitively coupled electrode assembly 30b according to another modified embodiment has a hollow tube structure in which a plurality of capacitively coupled electrodes 31 ′ and 33 ′ are formed with a plurality of gas injection holes 73 in a longitudinal direction. It consists of. That is, the plurality of capacitively coupled electrodes 31 ′ and 33 ′ function as a gas supply unit supplying a reaction gas into the reactor body 11. In this case, the gas supply may be divided into two groups to form a separate gas supply channel. It is possible to increase the uniformity of the plasma treatment by separating and supplying different gases.

As illustrated in FIG. 29, the plurality of capacitive coupling electrodes 31 ′ and 33 ′ may be formed of a conductor region 71 and an insulator region 71 surrounding the outside thereof. Alternatively, only the conductor region 71 may be provided. The shape and arrangement of the plurality of capacitive coupling electrodes 31 ′ and 33 ′ may be variously modified as described above. In addition, the plurality of capacitively coupled electrodes 31 ′ and 33 ′ may be connected to a gas supply source (not shown), and each may include a gas control valve 25 for individually controlling the gas flow rate. Alternatively, the gas supply flow rate may be collectively controlled or may be configured to be controlled in a mixed manner. As shown in FIG. 30, the multi-laser scanning line has a structure positioned between the plurality of capacitively coupled electrodes 31 and 33 and the support 12 provided in the reactor body 11.

The plasma reactor 10 of the present invention as described above, as shown in Figure 31, as well as the structure in which the support structure 12 is installed on top of the reactor body 11 as shown in Figure 1, the reactor body It may be composed of a structure located at the bottom of (11). In this case the exhaust baffle 6 and the gas outlet 3 will be configured at the bottom of the reactor body 11, and the capacitively coupled electrode assembly 30 and the gas supply 20 will be configured at the top of the reactor body 11. do.

The embodiment of the capacitively coupled plasma reactor having the multi-laser scanning line of the present invention described above is merely illustrative, and those skilled in the art to which the present invention pertains can make various modifications and other equivalent implementations therefrom. You can see that examples are possible. Accordingly, it is to be understood that the present invention is not limited to the above-described embodiments. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims. It is also to be understood that the present invention includes all modifications, equivalents, and substitutes within the spirit and scope of the invention as defined by the appended claims.

 The capacitively coupled plasma reactor having a multi-laser scanning line of the present invention can be very usefully used in plasma processing processes for forming various thin films such as fabrication of semiconductor integrated circuits, flat panel display fabrication, and solar cell fabrication. In particular, the capacitively coupled plasma reactor of the present invention can uniformly generate a large area of plasma by a plurality of capacitively coupled electrodes and a multi laser scanning line. In addition, it is possible to generate and maintain the plasma of a large area more uniformly by automatically balancing the currents in parallel driving the plurality of capacitive coupling electrodes.

1 is a view showing a plasma reactor according to a preferred embodiment of the present invention.

2 is a partial cross-sectional view of the bottom of the reactor showing a gas supply configured at the bottom of the capacitively coupled electrode mounting plate.

3 is a perspective view illustrating a capacitively coupled electrode assembly.

4 is a cross-sectional view of the capacitive coupling electrode of FIG. 3.

5 is a partial cross-sectional view showing a modification of the capacitively coupled electrode configured with the gas hole.

6 to 8 are views for explaining various configuration methods of a multi-laser scanning line.

FIG. 9 is a diagram for describing various relative arrangement methods of a multi-laser scanning line and a capacitive coupling electrode.

10 illustrates various modified structures of a capacitively coupled electrode.

11 to 21 illustrate various modifications of the planar structure and planar array structure of the capacitive coupling electrode.

22 is a diagram illustrating an example of a distribution circuit.

23-25 illustrate various variations of the distribution circuit.

FIG. 26 illustrates a gas supply unit and a capacitively coupled electrode assembly according to a modification.

FIG. 27 is a diagram for describing various relative arrangement methods of a multi-laser scanning line and a capacitive coupling electrode in one modification.

28 is a diagram for describing a capacitively coupled electrode assembly according to another modification.

FIG. 29 is a cross-sectional view of the capacitive coupling electrode of FIG. 28.

30 is a view showing a relative arrangement of the multi-laser scanning line and the capacitive coupling electrode in another variation.

It is a figure which shows the modified example of the installation structure of a plasma reactor.

* Description of the symbols for the main parts of the drawings *

3: gas outlet 6: exhaust baffle

10: plasma reactor 11: reactor body

12: support base 13: substrate to be processed

20: gas supply 21: gas inlet

22: gas distribution plate 23: gas inlet

24: gas supply pipe 25: gas control switch

26: gas injection hole 30: capacitive coupling electrode assembly

31, 33: capacitive coupling electrode 32: gas injection hole

34: electrode mounting plate 40: main power supply

41: impedance matcher 42, 43: bias power supply

44: impedance matcher 50: distribution circuit

51: compensation capacitor 52: transformer

53: middle tap 60: voltage level adjustment circuit

61: coil 62: multi-tap switching circuit

70: insulator region 71: conductor region

73: gas injection hole 75: gas injection hole

80: laser source 82: multi laser scanning line

83: reflector 85: laser termination

Claims (28)

Reactor body; A capacitively coupled electrode assembly including a plurality of capacitively coupled electrodes alternately arranged at regular intervals to linearly cross the lower portion of the reactor body to induce plasma discharge; A main power supply for supplying radio frequency power to said plurality of capacitively coupled electrodes; And Having a multi-laser scanning line including a laser source for constructing a multi-laser scanning line for scanning a laser beam through a laser transmission window provided on one side of the reactor body to form a plurality of laser scan lines inside the reactor body. Capacitively coupled plasma reactor. The method of claim 1, And a distribution circuit for distributing the radio frequency power provided from the main power source to the plurality of capacitively coupled electrodes. The method of claim 2, And a multi-laser scanning line comprising an impedance matcher configured between the main power supply and the distribution circuit to perform impedance matching. The method of claim 2, Wherein said distribution circuit comprises a multi-laser scanning line comprising a current balancing circuit for adjusting the balance of current supplied to said plurality of capacitively coupled electrodes. The method of claim 4, wherein The current balancing circuit includes a plurality of transformers for balancing the current by driving the plurality of capacitive coupling electrodes in parallel, The first side of the plurality of transformers are connected in series, the second side has a capacitively coupled plasma reactor having a multi-laser scanning line connected to correspond to the plurality of capacitively coupled electrodes. The method of claim 5, Secondary sides of the plurality of transformers each include a grounded middle tab, one end of the secondary side outputs a constant voltage and the other end a negative voltage, And the constant voltage is a constant voltage electrode of the plurality of capacitively coupled electrodes, and the negative voltage is provided to the negative voltage electrodes of the plurality of capacitively coupled electrodes. The method of claim 4, wherein The current balancing circuit has a capacitively coupled plasma reactor having a multi-laser scanning line including a voltage level adjusting circuit capable of varying a current balancing adjusting range. The method of claim 4, wherein Said current balancing circuit having a multi-laser scanning line comprising a compensation circuit for compensating for leakage current. The method of claim 4, wherein Said current balancing circuit having a multi-laser scanning line including a protection circuit for preventing damage caused by transient voltages. The method of claim 1, And the capacitively coupled electrode assembly includes a multi-laser scanning line including an electrode mounting plate on which the plurality of capacitively coupled electrodes are mounted. The method of claim 10, The electrode mounting plate includes a plurality of gas injection holes, Capacitance coupled plasma reactor having a multi-laser scanning line including a gas supply for supplying gas into the reactor body through the gas injection hole. The method of claim 11, The capacitively coupled plasma reactor has a multi-laser scanning line including a plurality of gas injection holes. The method of claim 12, The gas supply unit may include a first gas supply path configured to supply gas to the inside of the reactor body through some gas injection holes connected to the plurality of gas injection holes. A capacitively coupled plasma reactor having a multi-laser scanning line comprising a second gas supply path for supplying gas into the interior of the reactor body through some other gas injection holes not connected to the plurality of gas injection holes. The method of claim 1, A plurality of gas supply pipes installed across the interior of the reactor body and opposed to a support on which the substrate to be processed is placed in the reactor body, and having a plurality of gas injection holes; And the plurality of capacitively coupled electrodes have a multi-laser scanning line installed across the interior of the reactor body between the gas supply line and the support. The method of claim 1, The capacitively coupled plasma reactor has a multi-laser scanning line having a hollow tube structure in which a plurality of gas injection holes are formed, and serving as a gas supply unit supplying a reaction gas into the reactor body. The method of claim 1, Wherein the reactor body has a support on which a substrate to be processed is placed, wherein the support is either biased or unbiased. The method of claim 16, Wherein said support has multiple laser scanning lines biased by a single frequency power supply or two or more different frequency power supplies. The method of claim 16, The support is capacitively coupled plasma reactor having a multi-laser scanning line including an electrostatic chuck. The method of claim 16, The support is capacitively coupled plasma reactor having a multi-laser scanning line comprising a heater. The method of claim 16, Wherein the support has a structure that is linearly or rotationally movable parallel to the substrate to be processed, and has a multi-laser scanning line including a drive mechanism for linearly or rotationally moving the support. The method of claim 1, And the plurality of capacitively coupled electrodes have multiple laser scanning lines comprising a conductor region and an insulator region. The method of claim 1, And the capacitively coupled electrode assembly has a multi-laser scanning line including an insulating layer formed between the plurality of capacitively coupled electrodes. The method of claim 1, The plurality of capacitively coupled electrodes includes a plurality of constant voltage electrodes and a plurality of negative voltage electrodes, The array structure of the constant voltage electrode and the negative voltage electrode is a multi-laser scanning including at least one array structure selected from mutually alternating linear array structure, matrix-like array structure, mutually alternating spiral array structure, mutually alternating concentric array structure Capacitively coupled plasma reactor with lines. The method of claim 1, The constant voltage electrode and the plurality of negative voltage electrodes have a capacitively coupled plasma reactor having a multi-laser scanning line including at least one selected from a barrier structure, a flat structure, a protrusion structure, a column structure, an annular structure, a spiral structure, and a linear structure. . The method of claim 1, The reactor body includes a laser transmission window for injecting a laser beam therein, Wherein said laser source comprises one or more laser sources for causing a laser beam to be scanned into said reactor body through said laser transmission window to form said multi laser scanning line. The method of claim 25, The laser transmission window comprises two windows configured to face the side wall of the reactor body, Wherein said laser source includes a plurality of reflectors for reflecting a laser beam generated from said at least one laser source across said two windows to form said multi laser scanning line. The method of claim 1, The multi laser scanning line A structure positioned between the electric fields formed between the plurality of capacitively coupled electrodes, a structure positioned between the plurality of capacitively coupled electrodes and a support on which a substrate to be processed provided in the reactor body is placed, or a reaction gas into the reactor body Capacitively coupled plasma reactor having a multi-laser scanning line including at least one of the structure selected between the gas injection hole and the plurality of capacitive coupling electrode flowing in. The method of claim 1, The relative arrangement structure of the multi-laser scanning line and the plurality of capacitive coupling electrodes The reaction gas flowing into the reactor body receives a mixture of electrical energy by the capacitive coupling electrode and the thermal energy by the multi-laser scanning line, the reaction gas introduced into the reactor body from the plurality of capacitive coupling electrode A capacitively coupled plasma having a multi-laser scanning line comprising at least one of a structure that first receives the delivered electrical energy, or a structure in which the reaction gas introduced into the reactor body first receives thermal energy by the multi-laser scanning line. Reactor.

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