KR101434145B1 - Inductively coupled plasma reactor with multi laser scanning line - Google Patents

Abstract

An inductively coupled plasma reactor having a multi-laser scanning line according to the present invention includes a reactor body, a dielectric window defining one side of the reactor body, and a dielectric layer disposed proximate to the dielectric window to induce inductively coupled plasma in the reactor body. A main power source for supplying radio frequency power to the radio frequency antenna, and a laser source for forming a multi-laser scanning line including a plurality of laser scanning lines inside the reactor body . The inductively coupled plasma reactor having the multi-laser scanning line according to the present invention expands the radio frequency antenna to suit the size of the substrate to be processed in a large area. However, since the large-area plasma can be uniformly generated by installing the magnetic core cover, It is easy to make the reactor large-sized, and uniform current supply by the current balancing circuit and uniform gas supply by one or more gas supply channels can be achieved uniformly in high-density plasma. In addition, since the multiple inductive antenna assembly and the multi laser scanning line can be uniformly and widely scanned over the substrate to be processed, a large-sized plasma reactor for processing a substrate to be processed in a large area can be easily implemented, Can be efficiently improved and the process yield can be improved.

Laser, Inductively Coupled Plasma, Plasma Reactor

Description

TECHNICAL FIELD [0001] The present invention relates to an inductively coupled plasma reactor having a multi-laser scanning line,

More particularly, the present invention relates to an inductively coupled plasma reactor having a multi-laser scanning line capable of generating a large-area plasma more uniformly and thereby increasing the efficiency of plasma treatment on a large- .

A plasma is a highly ionized gas containing the same number of positive ions and electrons. Plasma discharges are used in gas excitation to generate active gases including ions, free radicals, atoms, and molecules. The active gas is widely used in various fields and is typically used in a variety of semiconductor manufacturing processes such as etching, deposition, cleaning, and ashing.

Plasma sources for generating plasma are various, and examples thereof include capacitive coupled plasma and inductive coupled plasma using a radio frequency. Capacitively coupled plasma sources have the advantage that they have higher capacity for process control than other plasma sources because of their accurate capacitive coupling and ion control capability. On the other hand, because the energy of the radio frequency power source is almost exclusively coupled to the plasma through capacitive coupling, the plasma ion density can only be increased or decreased by increasing or decreasing the capacitively coupled radio frequency power. However, an increase in radio frequency power increases the ion impact energy. As a result, radio frequency power is limited in order to prevent damage due to ion bombardment.

On the other hand, it is known that an inductively coupled plasma source can easily increase the ion density according to the increase of a radio frequency power source, and accordingly, the ion impact is relatively low and is suitable for obtaining a high density plasma. Thus, inductively coupled plasma sources are commonly used to obtain high density plasma. Inductively coupled plasma sources are typically developed using a RF antenna or a transformer coupled plasma (also referred to as a transformer coupled plasma). Techniques are being developed to improve the characteristics of plasma by adding electromagnets or permanent magnets thereto or adding capacitive coupling electrodes, and to improve reproducibility and controllability.

As a radio frequency antenna, a spiral type antenna or a cylinder type antenna is generally used. A radio frequency antenna is disposed outside a plasma reactor and delivers induced electromotive force into a plasma reactor through a dielectric window, such as quartz. Inductively coupled plasma using radio frequency antenna is relatively easy to obtain high density plasma, but plasma uniformity is affected by the structural characteristics of the antenna. Therefore, we are trying to obtain uniform high density plasma by improving the structure of radio frequency antenna.

However, in order to obtain a large-area plasma, it is difficult to increase the structure of the antenna or increase the power supplied to the antenna. For example, it is known that a non-uniform plasma is generated in the form of a radiation due to a standing wave effect. In addition, when high power is applied to the antenna, the capacitive coupling of the radio frequency antenna increases, so that the dielectric window must be made thick. As a result, the distance between the radio frequency antenna and the plasma increases, Problems arise.

Inductively coupled plasma using a transformer induces a plasma inside a plasma reactor using a potentiometer. This inductively coupled plasma completes the secondary circuit of the transformer. Conventional transformer-coupled plasma technologies have been developed in such a manner that an external discharge tube is placed in a plasma reactor or a closed core is mounted in a toroidal chamber or a transformer core is embedded in a plasma reactor. ought.

This transformer coupled plasma improves plasma reactor characteristics and energy transfer characteristics by improving the structure of the plasma reactor and improving the coupling structure of the transformer. Particularly, in order to obtain a large-area plasma, a combination structure of a transformer and a plasma reactor is improved, a plurality of external discharge tubes are provided, or an installed number of transformer cores is installed. However, simply increasing the number of external discharge tubes or increasing the number of embedded transformer cores makes it difficult to uniformly obtain a high-density large-area plasma.

In recent years, the semiconductor manufacturing industry has been further improved due to various factors such as miniaturization of semiconductor devices, enlargement of substrates to be processed such as a silicon wafer substrate, a glass substrate or a plastic substrate for manufacturing a semiconductor circuit, A plasma processing technique is required. In particular, there is a demand for an improved plasma source and a plasma processing technique having excellent processing capability for a large-area substrate to be processed. Further, various semiconductor manufacturing apparatuses using lasers are being provided. A semiconductor manufacturing process using a laser is widely applied to various processes such as deposition, etching, annealing, cleaning, and the like on a substrate to be processed. The above-described problems also exist in the case of such a semiconductor manufacturing process using a laser.

SUMMARY OF THE INVENTION It is an object of the present invention to provide an inductively coupled plasma reactor having a multi-laser scanning line which is easy to make large-sized and has a multi-laser scanning line and can generate and maintain large-area plasma uniformly.

It is another object of the present invention to provide an inductively coupled plasma reactor having a multi-laser scanning line and uniformly controlling the current balance of the inductively coupled plasma reactor to uniformly generate high-density plasma.

According to an aspect of the present invention, there is provided an inductively coupled plasma reactor having a multi-laser scanning line. An inductively coupled plasma reactor having a multi-laser scanning line of the present invention comprises: a reactor body; An antenna assembly including a dielectric window defining one side of the reactor body and a radio frequency antenna disposed proximate the dielectric window and for inducing an inductively coupled plasma within the reactor body; A main power supply for supplying radio frequency power to the radio frequency antenna; And a laser source for forming a multi-laser scanning line including a plurality of laser scanning lines inside the reactor body, wherein the antenna assembly includes a plurality of radio frequency antennas, and a radio frequency power source To the plurality of radio frequency antennas.

In one embodiment, the dielectric window includes a trench region in which the radio frequency antenna is installed, and a plurality of gas inlets and gas injection holes for injecting gas into the interior of the reactor body.

In one embodiment, the antenna assembly includes a magnetic core cover covering the radio frequency antenna such that a magnetic flux entrance is directed toward the inside of the reactor body.

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In one embodiment, an impedance matcher is provided between the main power source and the distribution circuit to perform impedance matching.

In one embodiment, the distribution circuit includes a current balancing circuit that adjusts the balance of current supplied to the plurality of radio frequency antennas.

In one embodiment, the current balancing circuit includes a plurality of transformers driving the plurality of radio frequency antennas in parallel and balancing a current, the primary sides of the plurality of transformers being connected in series, Frequency antenna.

In one embodiment, the secondary sides of the plurality of transformers each include a grounded intermediate tap, one end of the secondary side outputs a positive voltage and the other end outputs a negative voltage, and the constant voltage is applied to one end of the plurality of radio frequency antennas And the negative voltage is provided to the other end of the plurality of radio frequency antennas.

In one embodiment, the current balancing circuit includes a voltage level regulating circuit capable of varying the current balance regulating range.

In one embodiment, the current balancing circuit includes a compensation circuit for compensation of leakage current.

In one embodiment, the current balancing circuit includes a protection circuit for preventing damage by transient voltages.

In one embodiment, the gas supply unit supplies gas to the interior of the reactor body through the antenna assembly.

In one embodiment, the gas supply part includes at least two gas supply channels having independent gas supply paths.

In one embodiment, the reactor body has a support on which a substrate to be processed is placed, and the support is either biased or not biased.

In one embodiment, the supports are biased by a single frequency power source or two or more different frequency power sources.

In one embodiment, the support comprises an electrostatic chuck.

In one embodiment, the support includes a heater.

In one embodiment, the support has a linear or rotationally movable structure parallel to the substrate to be processed, and includes a drive mechanism for linearly or rotationally moving the support.

In one embodiment, the reactor body includes a laser-transmissive window for scanning a laser beam therein, and the laser source scans a laser beam into the interior of the reactor body through the laser transmissive window, And one or more laser sources for forming a scanning line.

In one embodiment, the laser-transmissive window includes two windows that are configured to face the sidewalls of the reactor body, and the laser source is configured to direct the laser beam generated from the one or more laser sources to the two windows And a plurality of reflectors for reflecting the laser beams to form the multi-laser scanning lines.

The inductively coupled plasma reactor having the multi-laser scanning line according to the present invention expands the radio frequency antenna to suit the size of the substrate to be processed in a large area. However, since the large-area plasma can be uniformly generated by installing the magnetic core cover, It is easy to make the reactor large-sized, and uniform current supply by the current balancing circuit and uniform gas supply by one or more gas supply channels can be achieved uniformly in high-density plasma. In addition, since the multiple inductive antenna assembly and the multi laser scanning line can be uniformly and widely scanned over the substrate to be processed, a large-sized plasma reactor for processing a substrate to be processed in a large area can be easily implemented, Can be efficiently improved and the process yield can be improved.

For a better understanding of the present invention, a preferred embodiment of the present invention will be described with reference to the accompanying drawings. The embodiments of the present invention may be modified into various forms, and the scope of the present invention should not be construed as being limited to the embodiments described in detail below. The present embodiments are provided to enable those skilled in the art to more fully understand the present invention. Therefore, the shapes and the like of the elements in the drawings can be exaggeratedly expressed to emphasize a clearer description. It should be noted that the same members in the respective drawings may be denoted by the same reference numerals. Detailed descriptions of well-known functions and constructions which may be unnecessarily obscured by the gist of the present invention are omitted.

1 is a view showing an inductively coupled plasma reactor according to a preferred embodiment of the present invention.

Referring to FIG. 1, an inductively coupled plasma reactor 10 according to a preferred embodiment of the present invention includes a reactor body 11, an antenna assembly 30 for providing an induced electromotive force for generating plasma into the reactor body 11, A main power supply source 40 for supplying a radio frequency power to the antenna assembly 30 and a laser source for constituting a multi laser scanning line composed of a plurality of laser scanning lines 82 inside the reactor body 40 80). The reactor body 11 is provided with a supporter 12 on which the substrate 13 is placed. An antenna assembly (30) is provided at an inner lower portion of the reactor body (11). The gas supply unit 20 is disposed at a lower portion of the antenna assembly 30 so as to supply the reaction gas supplied from a gas park (not shown) to the plurality of gas inlets 36 and the gas injection holes 32 formed in the antenna assembly 30 To the inside of the reactor body (11). The radio frequency power generated from the main power source 40 is supplied to the radio frequency antenna bundle 31 provided in the antenna assembly 30 through the impedance matcher 41. The laser source 80 provides a laser for constructing a multi-laser scanning line made up of a plurality of laser scanning lines 82 inside the reactor body 11. Plasma generated by the antenna assembly 30 and the multi laser scanning line is generated inside the reactor body 11 to process the substrate to be processed.

The plasma reactor 10 is provided with a reactor body 11 and a support 12 on which the substrate 13 is placed. The reactor body 11 may be made of a metal material such as aluminum, stainless steel, copper or a coated metal such as anodized aluminum or nickel plated aluminum. Or a refractory metal. Alternatively, the reactor body 11 may be wholly or partly made of an electrically insulating material such as quartz or ceramic. Thus, the reactor body 11 can be made of any material suitable for the intended plasma process to be performed. The structure of the reactor body 11 may have a suitable structure, for example, a circular structure or a rectangular structure, and any other structure for the uniform generation of the plasma and the substrate 13 according to the target substrate 13.

The substrate 13 is a substrate such as a wafer substrate, a glass substrate, a plastic substrate, or the like, for manufacturing various devices such as a semiconductor device, a display device, a solar cell, and the like. The gas outlet 3 of the plasma reactor 10 is connected to a vacuum pump (not shown). The plasma reactor 10 is subjected to plasma treatment on the substrate 13 under a low-pressure state at atmospheric pressure or lower. However, the plasma reactor 10 of the present invention can also be implemented as a plasma processing system of atmospheric pressure for processing substrates to be processed at atmospheric pressure.

2 is a partial cross-sectional view of the lower portion of the plasma reactor showing the antenna assembly and the gas supply portion configured at the lower portion thereof;

Referring to FIG. 2, the gas supply unit 20 is configured at the lower part of the antenna assembly 30. [ The gas supply unit 20 includes a gas inlet 21 connected to a gas supply source (not shown), one or more gas distribution plates 22, and a plurality of gas injection ports 23. A plurality of gas injection ports (23) are connected to the plurality of gas inlets (36) of the antenna assembly (30), respectively. The reaction gas input through the gas inlet 21 is evenly distributed by one or more gas distribution plates 22 and flows into the interior of the reactor body 11 through the plurality of gas injection ports 23. Although not specifically shown in the drawings, the gas supply unit 20 may include at least two gas supply channels having independent gas supply paths.

The antenna assembly 30 includes a dielectric window 34 forming one side of the reactor body 11 and a radio frequency antenna 31 located near the dielectric window 34 and for inducing inductively coupled plasma in the reactor body . The dielectric window 34 includes a trench region 35 in which the radio frequency antenna 31 is installed, a plurality of gas inlets 36 and a gas injection hole 32 for injecting gas into the interior of the reactor body 11 do. The radio frequency antenna 31 may have a flat spiral structure as shown in Fig. 3 or a flat zigzag structure as shown in Fig. In addition, it can have any type of structure for uniform induction of plasma. The trench region 35 may be formed in the dielectric window 34 in a suitable structure according to the shape of the radio frequency antenna 31. [ The plurality of gas inlets 36 and the gas injection holes 32 are formed in the dielectric window 34 so as to be positioned between the trench regions 35 and are dispersed in an appropriate number for uniform gas distribution.

3 and 4 are views showing various structures of a radio frequency antenna and a core cover.

Referring to FIGS. 3 and 4, a magnetic core cover 33 may be provided to reduce the loss of the magnetic field induced from the radio frequency antenna 31 and increase energy transfer efficiency and uniformity. The magnetic core cover 33 is installed in the antenna assembly 30 so as to cover the radio frequency antenna 31 with the magnetic flux entrance facing the inside of the reactor body 11. The magnetic core cover 33 may be composed of a plurality of pieces, and the uniformity of the magnetic field to be focused can be increased by including a nonmagnetic material layer on the contact surfaces of the pieces.

FIGS. 5 to 7 are views for explaining various methods of constructing the multi-laser scanning line.

5 to 7, the reactor body 11 has a laser-transmissive window 86, 87 for scanning a laser beam into the interior thereof. The laser-transmissive windows 86 and 87 may be composed of two windows 86 and 87 configured to face the side walls of the reactor body 11. The two windows 86 and 87 are provided to face each other in the reactor body 11 and can be configured as a slit structure having the same length. The laser source 80 includes one or more laser sources 84. The laser source 84 scans a laser beam into the interior of the reactor body 11 through the laser transmission windows 86 and 87 to form a plurality of laser scanning lines 82 inside the reactor body 11, Line configuration.

For example, as shown in FIG. 5, a plurality of laser sources 84 are arranged close to the laser-transmissive window 86 on one side, and a plurality A plurality of laser termination portions 85 may be formed. 6, a plurality of laser sources 84 may be spaced apart and a plurality of reflectors 83 may be provided therebetween so that the laser beam generated from the laser source 84 is transmitted through two laser- A plurality of laser scanning lines 82 can be formed by reflecting the laser beam 85 by reciprocatingly passing the laser beams 86 and 87 therebetween. Alternatively, as shown in Fig. 7, only one laser source 84 may be constituted and a plurality of reflectors 83 may be constituted. In this manner, a multi-laser scanning line can be constructed inside the reactor body 11 using one or more laser sources 84, a plurality of reflectors 83, and one or more laser terminations 85. [ It will be apparent to those skilled in the art that an optical system of a suitable structure can be used to inject the laser beam into the reactor body 11, although a more specific configuration and description are omitted.

Referring again to FIG. 1, a support table 12 for supporting the target substrate 13 is provided inside the reactor body 11. The support 12 is connected to bias power sources 42 and 43 and biased. For example, two bias power sources 42, 43, which supply different radio frequency power sources, are electrically coupled to and biased via the impedance matcher 44 to the support 12. The dual biasing structure of the support 12 facilitates the generation of plasma within the reactor body 11 and further improves plasma ion energy control to improve process yield. Or a single bias structure. Or the support 12 may be deformed into a structure having a zero potential without supplying a bias power. And the substrate support 12 may comprise an electrostatic chuck. Or the substrate support 12 may comprise a heater.

The support base 12 may be of a fixed type. Or the support base 12 has a linear or rotationally movable structure parallel to the substrate 13 to be processed and includes a drive mechanism 4 for linearly or rotationally moving the support base 12. This moving structure of the support table 12 is intended to enhance the processing efficiency of the substrate 13 to be processed. An exhaust baffle 6 can be constructed on the upper inside of the reactor body 11 for uniform exhaust of the gas discharged to the gas outlet 3 constituted on the upper part of the reactor body 11.

8 is a diagram showing an example of a distribution circuit.

Referring to FIG. 8, a radio frequency antenna 31 provided in the antenna assembly 30 may be formed of a plurality of antennas to induce a more uniform plasma discharge. The plurality of radio frequency antennas 31 are supplied with the RF power generated from the main power source 40 through the impedance matcher 41 and the distribution circuit 50 and are driven and coupled in the reactor body 11 Induced plasma. The main power source 40 may be configured using a radio frequency generator capable of controlling the output power without a separate impedance matcher. The radio frequency power source generated from the main power source 40 is provided as a plurality of radio frequency antennas 31 through the impedance matcher 41. To this end, a distribution circuit 50 may be provided. The distribution circuit 50 distributes the radio frequency power supplied from the main power supply source 40 to a plurality of radio frequency antennas 31 and supplies the radio frequency power to the plurality of radio frequency antennas 31 in parallel. Preferably, the distribution circuit 50 may comprise a current balancing circuit. The current balancing circuit automatically balances the currents supplied to the plurality of antenna bundles 31. Thus, a large-area plasma can be generated and maintained more uniformly.

The distribution circuit 50 includes a current balance circuit composed of a plurality of transformers 52 that drive a plurality of primary winding coils 33 in parallel and balance the current. The primary side of the plurality of transformers 52 is connected in series between a power input terminal through which the radio frequency is inputted through the impedance matcher 41 and the ground and one end of the secondary side is connected to a corresponding one of the plurality of radio frequency antennas 31 And the other ends are commonly grounded. The plurality of transformers 52 divides the voltage between the power input terminal and the ground equally and outputs a plurality of divided voltages to one end of the plurality of radio frequency antennas 31. The other ends of the plurality of radio frequency antennas 31 are commonly grounded.

Since the currents flowing to the primary side of the plurality of transformers 52 are the same, the power supplied to the plurality of radio frequency antennas 31 becomes the same. When the impedance of any one of the plurality of radio frequency antennas 31 is changed and a change in the amount of current is generated, a plurality of transformers 52 interact to form a current balance. Thus, the currents supplied to the plurality of radio frequency antennas 31 are uniformly continuously and automatically adjusted. In the plurality of transformers 52, the winding ratio of the primary side and the secondary side is basically set to 1: 1, but this can be changed.

Although not shown in the drawings, the distribution circuit 50 configured by the current balance circuit as described above may include a protection circuit for preventing an excessive voltage from being generated in the plurality of transformers 52. [ The protection circuit prevents the transient voltage from being increased in the transformer due to a defect such as that any one of the plurality of transformers 52 is electrically opened. The protection circuit of this function may be realized by connecting a varistor to both ends of each of the plurality of transformers 52 or by using a constant voltage diode such as a zener diode . A compensation circuit such as a compensation capacitor 51 for compensating the leakage current may be added to each of the transformers 52 in the distribution circuit 50.

9 to 11 are diagrams showing various modifications of the distribution circuit.

Referring to Fig. 9, the one modified distribution circuit 50 includes intermediate taps where the secondary sides of the plurality of transformers 52 are grounded. Here, one end of the secondary side outputs a positive voltage and the other end outputs a negative voltage. The constant voltage is supplied to one end of the plurality of antenna bundles 31 and the negative voltage is supplied to the other end of the plurality of radio frequency antennas 31.

10 and 11, the distribution circuit 50 of another modification may include a voltage level regulating circuit 60 capable of varying the current balance regulating range. The voltage level regulating circuit 60 includes a multi-tap switching circuit 62 for grounding the coil 61 and the multi-tap. The voltage level adjustment circuit 60 applies a variable voltage level to the distribution circuit 50 in accordance with the switching position of the multi-tap switching circuit 62, and the distribution circuit 50 is controlled by the voltage level regulation circuit 60 The current balance adjustment range is varied by the determined voltage level. In addition, although not shown in the drawings, the plurality of radio frequency antennas 31 may be connected in series between the impedance matcher 41 and the ground without the distribution circuit 50. Or may be connected in parallel or connected in a serial-parallel hybrid manner.

The plasma reactor 10 of the present invention as described above has a structure in which the supporting structure 12 is installed on the upper part of the reactor body 11 as shown in Fig. 1, (Not shown). In this case, the exhaust baffle 6 and the gas outlet 3 will be formed at the lower part of the reactor body 11, and the antenna assembly 30 and the gas supply part 20 are configured at the upper part of the reactor body 11.

The embodiments of the inductively coupled plasma reactor having the multi-laser scanning line of the present invention described above are merely illustrative and those skilled in the art will appreciate that various modifications and equivalent implementations You can see that examples are possible. Accordingly, it is to be understood that the present invention is not limited to the above-described embodiments. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims. It is also to be understood that the invention includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the appended claims.

INDUSTRIAL APPLICABILITY The inductively coupled plasma reactor having the multi-laser scanning line of the present invention can be very usefully used in plasma processing for forming various thin films such as the manufacture of semiconductor integrated circuits, the manufacture of flat panel displays, and the production of solar cells. The inductively coupled plasma reactor having the multi-laser scanning line according to the present invention expands the radio frequency antenna to suit the size of the substrate to be processed in a large area. However, since the large-area plasma can be uniformly generated by installing the magnetic core cover, It is easy to increase the area of the reactor and uniform plasma current can be uniformly generated due to the uniform current supply by the current balancing circuit. In addition, since the multiple inductive antenna assembly and the multi laser scanning line can be uniformly and widely scanned over the substrate to be processed, a large-sized plasma reactor for processing a substrate to be processed in a large area can be easily implemented, Can be efficiently improved and the process yield can be improved.

1 is a view showing an inductively coupled plasma reactor according to a preferred embodiment of the present invention.

2 is a partial cross-sectional view of the lower portion of the plasma reactor showing the antenna assembly and the gas supply portion configured at the lower portion thereof;

3 and 4 are views showing various structures of a radio frequency antenna and a core cover.

FIGS. 5 to 7 are views for explaining various methods of constructing the multi-laser scanning line.

8 is a diagram showing an example of a distribution circuit.

9 to 11 are diagrams showing various modifications of the distribution circuit.

12 is a view showing a modification of the installation structure of the inductively coupled plasma reactor.

Description of the Related Art [0002]

3: gas outlet 6: exhaust baffle

10: Plasma reactor 11: Reactor body

12: support member 13: substrate to be processed

20: gas supply part 21: gas inlet

22: gas distribution plate 23: gas inlet

30: Antenna assembly 31: Radio frequency antenna

32: Gas injection hole 33: Magnetic core cover

34: dielectric window 35: trench area

36: gas inlet 40: main power source

41: Impedance matching device 42, 43: bias power source

44: Impedance matcher 50: Distribution circuit

51: compensation capacitor 52: transformer

53: Middle tap 60: Voltage level adjustment circuit

61: coil 62: multi-tap switching circuit

80: laser source 82: multi laser scanning line

83: reflector 85: laser terminator

Claims (20)

Reactor body; An antenna assembly including a dielectric window defining one side of the reactor body and a radio frequency antenna disposed proximate the dielectric window and for inducing an inductively coupled plasma within the reactor body; A main power supply for supplying radio frequency power to the radio frequency antenna; And And a laser source for forming a multi-laser scanning line including a plurality of laser scanning lines in the reactor body, Wherein the antenna assembly includes a plurality of radio frequency antennas, And a distribution circuit for distributing radio frequency power provided from the main power source to the plurality of radio frequency antennas. The method according to claim 1, Wherein the dielectric window has a multi-laser scanning line including a trench region in which the radio frequency antenna is installed and a plurality of gas inlets and gas injection holes for injecting gas into the interior of the reactor body. The method according to claim 1, Wherein the antenna assembly includes a magnetic core cover covering the radio frequency antenna such that a magnetic flux entrance is directed toward the inside of the reactor body. delete The method according to claim 1, And an impedance matcher formed between the main power source and the distribution circuit to perform impedance matching. The method according to claim 1, Wherein the distribution circuit comprises a current balancing circuit for regulating the balance of current supplied to the plurality of radio frequency antennas. The method according to claim 6, Wherein the current balancing circuit includes a plurality of transformers driving the plurality of radio frequency antennas in parallel and balancing current, Wherein the primary side of the plurality of transformers is connected in series and the secondary side has a multi laser scanning line connected corresponding to the plurality of radio frequency antennas. 8. The method of claim 7, Wherein the secondary sides of the plurality of transformers include respective grounded intermediate taps, one end of the secondary side outputs a positive voltage and the other end outputs a negative voltage, Wherein the constant voltage has one end of the plurality of radio frequency antennas and the negative voltage has a multi-laser scanning line provided at the other end of the plurality of radio frequency antennas. The method according to claim 6, Wherein the current balancing circuit comprises a voltage level regulating circuit capable of varying a current balance regulation range. The method according to claim 6, The current balancing circuit having a multi-laser scanning line including a compensation circuit for compensating for leakage current. The method according to claim 6, Said current balancing circuit having a multi-laser scanning line including a protection circuit for preventing damage by transient voltage. The method according to claim 1, And a gas supply unit for supplying gas into the interior of the reactor body through the antenna assembly. 13. The method of claim 12, Wherein the gas supply unit comprises at least two gas supply channels having independent gas supply paths. The method according to claim 1, Wherein the reactor body has a support on which a substrate to be processed is placed, and the support has a multi-laser scanning line that is either biased or not biased. 15. The method of claim 14, Wherein the support has a multi-laser scanning line biased by a single frequency power source or two or more different frequency power sources. 15. The method of claim 14, Wherein the support has a multi-laser scanning line including an electrostatic chuck. 15. The method of claim 14, Wherein the support has a multi-laser scanning line including a heater. 15. The method of claim 14, Wherein the support has a structure that is linear or rotationally movable in parallel with the substrate to be processed, and has a multi-laser scanning line including a drive mechanism for linearly or rotationally moving the support. The method according to claim 1, Wherein the reactor body includes a laser-transmissive window for scanning a laser beam therein, Wherein the laser source comprises a multi-laser scanning line including at least one laser source for scanning the laser beam into the interior of the reactor body through the laser transmission window to form the multi-laser scanning line. 20. The method of claim 19, Wherein the laser-transmissive window comprises two windows configured to face the side walls of the reactor body, Wherein the laser source comprises a multi-laser scanning line including a plurality of reflectors for reflecting the laser beam generated from the at least one laser source through the two windows to form the multi-laser scanning line.

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