KR101384583B1 - Inductively coupled plasma reactor having multi rf antenna - Google Patents

Abstract

The present invention relates to an inductively coupled plasma reactor having multiple radio frequency antennas. The inductively coupled plasma reactor of the present invention is operated by receiving a reaction chamber having a plasma discharge region and a radio frequency having a phase difference of the same frequency to provide two or more radio frequency antennas that provide induced electromotive force for plasma generation to an inner region of the reaction chamber. It has multiple radio frequency antenna having. The inductively coupled plasma reactor of the present invention adopts the advantages of both inductively coupled plasma and capacitively coupled plasma, and improves the flux transfer efficiency of the antenna, so that the control of plasma ion energy is high and a more uniform large area high density plasma can be generated. have.

Plasma, antenna, inductive coupling, capacitive coupling

Description

TECHNICAL FIELD [0001] The present invention relates to an inductively coupled plasma reactor having multiple radio frequency antennas,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an inductively coupled plasma reactor using a radio frequency and, more particularly, to a plasma processing apparatus using a radio frequency antenna, To an inductively coupled plasma reactor capable of generating a high-density plasma.

A plasma is a highly ionized gas containing the same number of positive ions and electrons. Plasma discharges are used in gas excitation to generate active gases including ions, free radicals, atoms, and molecules. The active gas is widely used in various fields and is typically used in a variety of semiconductor manufacturing processes such as etching, deposition, cleaning, and ashing.

Plasma sources for generating plasma are various, and examples thereof include capacitive coupled plasma and inductive coupled plasma using a radio frequency.

Capacitively coupled plasma sources have the advantage that they have higher capacity for process control than other plasma sources because of their accurate capacitive coupling and ion control capability. On the other hand, because the energy of the radio frequency power source is almost exclusively coupled to the plasma through capacitive coupling, the plasma ion density can only be increased or decreased by increasing or decreasing the capacitively coupled radio frequency power. However, an increase in radio frequency power increases the ion impact energy. As a result, in order to prevent damage due to the ion bombardment, the radio frequency power supplied is limited.

On the other hand, it is known that an inductively coupled plasma source can easily increase the ion density according to the increase of a radio frequency power source, and accordingly, the ion impact is relatively low and is suitable for obtaining a high density plasma. Thus, inductively coupled plasma sources are commonly used to obtain high density plasma. Inductively coupled plasma sources are typically developed using a RF antenna or a transformer coupled plasma (also referred to as a transformer coupled plasma). Techniques are being developed to improve the characteristics of plasma by adding electromagnets or permanent magnets thereto or adding capacitive coupling electrodes, and to improve reproducibility and controllability.

As a radio frequency antenna, a spiral type antenna or a cylinder type antenna is generally used. A radio frequency antenna is disposed outside a plasma reactor and delivers induced electromotive force into a plasma reactor through a dielectric window, such as quartz. Inductively coupled plasma using radio frequency antenna is relatively easy to obtain high density plasma, but plasma uniformity is affected by the structural characteristics of the antenna. Therefore, we are trying to obtain uniform high density plasma by improving the structure of radio frequency antenna.

However, in order to obtain a large-area plasma, it is difficult to increase the structure of the antenna or increase the power supplied to the antenna. For example, it is known that a non-uniform plasma is generated in the form of a radiation due to a standing wave effect. In addition, when high power is applied to the antenna, the capacitive coupling of the radio frequency antenna increases, so that the dielectric window must be made thick. As a result, the distance between the radio frequency antenna and the plasma increases, Problems arise.

Recently, in the semiconductor manufacturing industry, due to various factors such as miniaturization of semiconductor devices, enlargement of a silicon wafer substrate for manufacturing a semiconductor circuit, enlargement of a glass substrate for manufacturing a liquid crystal display, and appearance of a new object to be processed, . In particular, there is a need for improved plasma sources and plasma processing techniques that have good processing capabilities for large area workpieces.

Accordingly, the present invention has been made to solve the above-mentioned problems, and its object is to adopt both the advantages of inductively coupled plasma and capacitively coupled plasma, and to improve the flux transfer efficiency of the antenna, thereby providing high uniformity and more control over plasma ion energy. An inductively coupled plasma reactor capable of generating a large area of high density plasma is provided.

According to an aspect of the present invention, there is provided an inductively coupled plasma reactor. An inductively coupled plasma reactor according to one aspect of the present invention comprises: a reaction chamber having a plasma discharge region; And a multiple radio frequency antenna having two or more radio frequency antennas which are driven by being supplied with a radio frequency having a phase difference of the same frequency to provide induced electromotive force for plasma generation to an inner region of the reaction chamber.

In one embodiment, a power supply for supplying a radio frequency; And a power division supply unit for dividing the radio frequency supplied from the power supply source into two or more radio frequency antennas by dividing two or more in parallel to have a phase difference.

In one embodiment, two or more power sources for supplying radio frequencies to multiple radio frequency antennas; And a phase control unit for controlling radio frequencies supplied from two or more power sources to be supplied to the multiple radio frequency antennas having a phase difference from each other.

In one embodiment, a dielectric window is provided between the multiple radio frequency antennas and the inner region of the reaction chamber.

In one embodiment, the dielectric window comprises: a trench region in which multiple radio frequency antennas are installed; And one or more gas supply holes opened into the reaction chamber.

In one embodiment, the magnetic flux entrance includes a core cover that directs the interior of the reaction chamber and covers the multiple radio frequency antennas.

In one embodiment, a gas supply unit for supplying a process gas into the reaction chamber through the gas supply hole of the dielectric window.

In one embodiment, a substrate support is provided in the reaction chamber to support a substrate to be processed, wherein the substrate support is either biased by one or more radio frequencies or not biased at all.

According to another aspect of the present invention, an inductively coupled plasma reactor includes: a reaction chamber having a plasma discharge region; And a multiple radio frequency antenna having at least two radio frequency antennas which are supplied with a radio frequency and provide an induced electromotive force for plasma generation to an inner region of the reaction chamber, but are driven to generate a voltage difference between any two points correlated with each other.

In one embodiment, a power supply for supplying a radio frequency; And a power division supply unit for dividing two or more radio frequencies supplied from a power supply in parallel and supplying them to multiple radio frequency antennas so that a voltage difference between any two points where two or more radio frequency antennas are correlated with each other is generated.

In one embodiment, two or more power sources for supplying radio frequencies to multiple radio frequency antennas; And a phase control unit controlling a phase difference of radio frequencies supplied from two or more power sources so that a voltage difference between any two points at which two or more radio frequency antennas are correlated with each other occurs.

In one embodiment, two or more radio frequency antennas of a multi-radio frequency antenna are connected in series, but have a physical arrangement and an electrical connection structure such that the voltage difference between any two points where the two or more radio frequency antennas are correlated is driven constant. Have

In one embodiment, a dielectric window is provided between the multiple radio frequency antennas and the interior region of the reaction chamber.

In one embodiment, the dielectric window comprises: a trench region in which multiple radio frequency antennas are installed; And one or more gas supply holes opened into the reaction chamber.

In one embodiment, the magnetic flux entrance includes a core cover that covers the multiple radio frequency antennas facing the interior of the reaction chamber.

In one embodiment, a gas supply unit for supplying a process gas into the reaction chamber through the gas supply hole of the dielectric window.

In one embodiment, a substrate support is provided in the reaction chamber to support a substrate to be processed, wherein the substrate support is either biased by one or more radio frequencies or not biased at all.

According to the inductively coupled plasma reactor of the present invention, it adopts both the advantages of inductively coupled plasma and capacity-coupled plasma, and improves the flux transfer efficiency of the antenna to provide high control of plasma ion energy and a more uniform, high-density plasma. May occur. In particular, a complex plasma is generated by inductive coupling and mutual capacitive coupling by each of the multiple radio frequency antennas in the reaction chamber, so that a more uniform high density plasma can be reproducibly generated. In addition, the magnetic flux induced by the multi-radio frequency antenna is warmed by the core cover is a uniform distribution in the plane while increasing the intensity. As a result, a flat plasma distribution can be obtained.

For a better understanding of the present invention, a preferred embodiment of the present invention will be described with reference to the accompanying drawings. The embodiments of the present invention may be modified into various forms, and the scope of the present invention should not be construed as being limited to the embodiments described in detail below. The present embodiments are provided to enable those skilled in the art to more fully understand the present invention. Therefore, the shapes and the like of the elements in the drawings can be exaggeratedly expressed to emphasize a clearer description. It should be noted that in the drawings, the same members are denoted by the same reference numerals. Detailed descriptions of well-known functions and constructions which may be unnecessarily obscured by the gist of the present invention are omitted.

1 is a circuit diagram of an inductively coupled plasma reactor for driving multiple radio frequency antennas in parallel according to a first embodiment of the present invention. Referring to FIG. 1, the inductively coupled plasma reactor according to the first embodiment includes a reaction chamber 10 and multiple radio frequency antennas 30 and 32. The multiple radio frequency antennas 30 and 32 are composed of a first radio frequency antenna 30 and a second radio frequency antenna 32, for example. The first radio frequency antenna 30 and the second radio frequency antenna 32 are driven by being supplied with a radio frequency of the same frequency with a phase difference to provide induced electromotive force for generating plasma to the inner region of the reaction chamber 10.

The reaction chamber 10 has a chamber body 12 forming a plasma discharge region and a dielectric window 20 forming a ceiling of the chamber body 12. The dielectric window 20 is located between the multiple radio frequency antennas 30, 32 and the interior region of the reaction chamber 10. The substrate support 14 for supporting the substrate 18 to be processed is provided in the reaction chamber 10. The substrate 18 to be processed is, for example, a silicon wafer substrate for manufacturing a semiconductor device or a glass substrate for manufacturing a liquid crystal display, a plasma display or the like. Although not shown in detail, the lower end of the chamber body 12 is provided with a gas outlet connected to a vacuum pump for gas exhaust. The chamber body 12 is made of metal material such as aluminum, stainless steel, copper. Or a coated metal such as anodized aluminum or nickel plated aluminum. Or refractory metal. Alternatively, it is possible to rewrite the chamber body 12 entirely with an electrically insulating material such as quartz, ceramic, or other materials suitable for the intended plasma process to be performed. In this case, it may not be necessary to construct a separate dielectric window 20.

2 is a plan view of a dielectric window in which multiple radio frequency antennas are installed. Referring to FIG. 2, the upper portion of the dielectric window 20 has a concave-convex structure having a trench region 22 in which multiple radio frequency antennas 30 and 32 are installed. The trench region 22 is formed in the same manner as the planar arrangement structure of the multiple radio frequency antennas 30 and 32. The structure of the multiple radio frequency antennas 30 and 32 and the trench region 22 can be, for example, a flat spiral structure and can be transformed into other structures to increase the plasma efficiency. The dielectric window 31 has a flat plate structure as a whole, but may have a domed structure. Or any other type of structure for uniform generation of the plasma. The dielectric window 20 comprises at least one, preferably a plurality of gas supply holes 24 opening into the reaction chamber 10 at raised portions between the trench regions 35. The gas is evenly injected into the inner region of the reaction chamber 10 through the plurality of gas supply holes 24.

As such, the multiple radio frequency antennas 30 and 32 installed in the dielectric window 20 and the trench region 22 constitute an inductively coupled plasma source to generate the inductively coupled plasma inside the reaction chamber 10. In addition, a cooling configuration or a heating configuration for controlling the internal temperature of the dielectric window 20 and the reaction chamber 10 may be included in the reaction chamber 10.

3 is a cross-sectional view of an upper portion of an inductively coupled plasma reactor showing an example of installing a gas supply on top of a dielectric window. Referring to FIG. 3, a gas supply unit 60 is provided on the dielectric window 20. The gas supply unit 60 includes a gas inlet 62 connected to a gas supply source (not shown) and one or more gas distribution plates 64 through a plurality of gas supply holes 24 at the top of the dielectric window 20. Process gas is input into the reaction chamber 10. The lower end of the gas supply part 60 is formed with a plurality of openings 66 corresponding to the plurality of gas supply holes 24. [ The gas supply unit 60 may be modified to have a separate gas supply structure for separately supplying different process gases supplied from two gas sources when supplying two or more process gases separately may increase process efficiency. . The structure for preventing the gas leakage in the process of transferring the process gas to the inside of the reaction chamber 10 and the necessary structures thereof are not specifically shown. For example, a structure for preventing gas leakage such as O- Appropriate installation structures for installation in a plasma reactor will be provided in the inductively coupled plasma reactor.

4 is a partially enlarged cross-sectional view of an upper portion of an inductively coupled plasma reactor showing an enlarged trench portion of a dielectric window provided with multiple radio frequency antennas. Referring to FIG. 4, multiple radio frequency antennas 30, 32 are covered by a core cover 34. The core cover 34 covers the multiple radio frequency antennas 30 and 32 while the magnetic flux entrance points toward the inside of the reaction chamber 10. The core cover 34 is made of ferrite material but may be made of other alternative materials. The core cover 34 can be constructed by assembling a plurality of pieces of ferrite core pieces in the shape of a horseshoe. In the case of using multiple pieces, a nonmagnetic material layer such as an insulating material may be inserted and connected to the assembly surface of each piece. Or an integral ferrite core may be used. Although not shown, a Faraday shield may be selectively configured between the dielectric window 20 and the multiple radio frequency antennas 30 and 32. The magnetic flux induced by the multiple radio frequency antennas 30 and 32 being warmed by the core cover 34 has a uniform distribution in planarity while increasing in intensity. As a result, a flat plasma distribution can be obtained.

Referring back to FIG. 1, the first radio frequency antenna 30 and the second radio frequency antenna 32 constituting the multiple radio frequency antennas 30 and 32 are driven by being supplied with a radio frequency of the same frequency with a phase difference. do. The power supply 40 generates a radio frequency and inputs it to the power split supply 44 through the impedance matcher 42. The power division supply unit 44 divides the input radio frequency and supplies the same to the first and second radio frequency antennas 30 and 32 with a phase difference. For example, the power split supply unit 44 may divide and supply power to the first radio frequency antenna 30 and the second radio frequency antenna 32 so as to have mutually opposite phases. The power supply 40 may be configured using a radio frequency generator capable of controlling the output power without a separate impedance matcher.

5 and 6 are views illustrating examples of a circuit configuration method of a power split supply unit. The power split supply 44 may be configured as a single winding transformer having a grounded intermediate tab 47, as shown in FIG. Alternatively, the power split supply 44 may be configured as a lottery transformer having an intermediate tap 47 grounded on the secondary side, as shown in FIG. The first output terminal 45 of the power split supply 44 has the same phase as the input radio frequency RFin, but has a positive radio frequency based on the ground level, and the second output terminal 46 has an input radio frequency ( It has a phase opposite to that of RFin but outputs a radio frequency of negative voltage based on the ground level. The power division supply unit 44 may be configured with another type of circuit in addition to the single winding or the lottery transformer.

7 to 14 are graphs showing various examples of a power split supply scheme and voltage current characteristics of a multi-radio frequency antenna in each of the examples. As illustrated in Figs. 7 to 14, the multiple radio frequency antennas 30 and 32 can be divided in various ways, so that the multiple radio frequency antennas 30 and 32 are shown in the accompanying drawings. Voltage-current characteristics as shown.

For example, referring to FIG. 7, the first and second radio frequency antennas 30 and 32 are arranged in a flat spiral structure adjacent to each other at equal intervals. The outer ends Np1 and Nn1 of the first and second radio frequency antennas 30 and 32 have a point symmetrical structure with reference to the center point of the plate spiral. In this arrangement structure, the radio frequency of the non-inverting phase is input to the outer end Np1 and the inner end Np2 is grounded in the first radio frequency antenna 30. On the contrary, in the second radio frequency antenna 32, the outer end Nn1 is grounded and the radio frequency of the inverted phase is input to the inner end Nn2. Thus, as shown in FIG. 8, the first and second radio frequency antennas 30 and 32 are symmetrical (point symmetrical structure) from the outer ends Np1 and Nn1 to the inner ends Np2 and Nn2. Will have the same voltage difference. That is, the voltage difference is | VpH-VnH | = | VpL-VnL | Can be displayed as Where VpH is the maximum voltage of the radio frequency in the non-inverted phase, VnH is the maximum voltage of the radio frequency in the inverted phase, VpL is the minimum voltage of the radio frequency in the non-inverted phase, and VnL is the minimum voltage of the radio frequency in the inverted phase. The currents i_p and i_n of the first and the first radio frequency antennas 30 and 32 have the same direction.

As such, radio frequencies of the same frequency having opposite phases are input to the first and second radio frequency antennas 30 and 32 so that the first and second radio frequency antennas 30 and 32 are all two arbitrary points of point symmetry. The same relative voltage difference occurs. This voltage difference causes a capacitive coupling to occur between the first and second radio frequency antennas 30 and 32. Thus, the first and second radio frequency antennas 30 and 32 respectively provide inductive coupling energy into the reaction chamber 10 while providing energy due to mutual capacitive coupling into the reaction chamber 10. Therefore, a complex plasma is generated in the reaction chamber 10 by inductive coupling and mutual capacitive coupling by the first and second radio frequency antennas 30 and 32, respectively. In this case, the inductive coupling energy can be further enhanced because the current directions of the first and second radio frequency antennas 30 and 32 are the same, and a more uniform high density can be achieved by capacitive coupling having a uniform voltage difference in point symmetry. Plasma can be generated reproducibly.

As another example, the arrangement structure of the first and second radio frequency antennas 30 and 32 shown in FIG. 9 is the same as that of FIG. 7 described above. However, the radio frequency of the non-inverting phase is input to the inner end Np2 of the first radio frequency antenna 30, and the outer end Np1 is grounded. In the second radio frequency antenna 32, the inner end Nn2 is grounded, and a radio frequency of an inverted phase is input to the outer end Nn1. Therefore, as a result, the current flow direction is opposite to that of FIG. 7 described above, and has the same characteristics.

As another example, the arrangement structure of the first and second radio frequency antennas 30 and 32 shown in FIG. 11 is the same as that of FIG. However, the radio frequency of the non-inverting phase is input to the inner end Np2 of the first radio frequency antenna 30 and the outer end Np1 is grounded. Also in the case of the second radio frequency antenna 32, the radio frequency of the inverted phase is input to the inner end Nn2 and the outer end Nn1 is grounded. As a result, unlike the above two cases, it has a voltage-current characteristic as shown in FIG. That is, the voltage difference is the highest at the two inner ends Np2 and Nn2 and the lowest at the two outer ends Np1 and Nn1. The currents i_p and i_n of the first and second radio frequency antennas 30 and 32 have opposite directions.

As another example, the arrangement structure of the first and second radio frequency antennas 30 and 32 shown in FIG. 13 is the same as that of FIG. 7 described above. However, the radio frequency of the non-inverted phase is input to the outer end Np1 of the first radio frequency antenna 30 and the inner end Np2 is grounded. Also, in the case of the second radio frequency antenna 32, the radio frequency of the inverted phase is input to the outer end Nn1 and the inner end Nn2 is grounded. Therefore, the voltage-current characteristic in this case has the same characteristics as the relationship between the magnitude of the voltage and the current flow in reverse as compared with the case of FIG. 11 described above.

As described above, the relative arrangement relationship of the multiple radio frequency antennas 30 and 32 and the characteristics of the voltage-current are various, such as the characteristics of the reaction chamber 10, the characteristics of the plasma treatment process, the characteristics of the processing gas, and the characteristics of the substrate to be processed. Depending on the process parameters it may be appropriately chosen to obtain the optimum plasma efficiency. Although the case where the multiple radio frequency antennas 30 and 32 are configured by two radio frequency antennas has been described as an example, a case in which two or more radio frequency antennas are used may be extended by the same method. In addition, the method of designing the voltage difference between the radio frequency antennas constituting the multiple radio frequency antennas 30 and 32 may be transformed into not only a point symmetric structure but also a line symmetric structure or other symmetrical structure. That is, the multiple radio frequency antennas 30 and 32 are supplied with radio frequencies to provide induced electromotive force for plasma generation to an internal region of the reaction chamber, but at least two radio frequencies driven to generate a voltage difference between two mutually correlated points. It includes an antenna. In addition, the relative current flow directions of the respective radio frequency antennas belonging to the multiple radio frequency antennas 30 and 32 may be variously modified. However, the deformed structure is deformed in order to change plasma density, uniformity, etc. and finally increase the plasma processing efficiency.

15A to 15E are diagrams illustrating various modifications of a current supply scheme and a core cover mounting structure of a multiple radio frequency antenna. As shown in FIG. 15A, the multiple radio frequency antennas 30 and 32 may be supplied with radio frequencies in the same current direction with respect to each radio frequency antenna. Thus, the direction of the magnetic flux induced by the multiple radio frequency antennas 30 and 32 will also be induced equally. Alternatively, as shown in FIG. 15B, a radio frequency may be supplied to each radio frequency antenna with different current directions. Thus the direction of the magnetic flux induced by the multiple radio frequency antennas 30, 32 will also be induced differently. As shown in FIGS. 15C to 15E, two or more multiple radio frequency antennas 30-1 and 30-2 and 32-1 and 32-2 may be provided in one core cover 34. In this case, the directions of the currents may be supplied with radio frequencies in the same manner, in the opposite manner, or alternately differently. And the magnetic flux induced in each direction of current will also be the same, different or complex. The various deformations in the current direction are also changed in order to change the plasma density, uniformity, and the like, and finally increase the plasma processing efficiency.

A substrate support 18 is provided inside the reaction chamber 10, and the substrate support 18 is biased by receiving bias power through the impedance matcher 54 from one or more bias power sources 50 and 52. . Although not shown in the drawings, a DC power source may be supplied to the substrate support 16 from a DC power source. When bias power is supplied from two or more bias power supplies 50 and 52, each bias power has a different frequency. Also, depending on the process characteristics, the substrate support 18 may not be biased at all.

FIG. 16 is a view showing a variant in which multiple radio frequency antennas are respectively driven by separate power supplies. Referring to FIG. 16, the inductively coupled plasma reactor according to the modification of the first embodiment is the same as the first embodiment described above. However, two or more power sources 40 and 41 and respective impedance matching devices 42 and 43 are provided to supply radio frequency to the multiple radio frequency antennas 30 and 32, and a phase control unit for phase control ( 45) is different. Here, the phase controller 45 controls the radio frequencies supplied from two or more power sources 40 and 41 to be supplied to the multiple radio frequency antennas 30 and 32 with phase differences from each other.

17 shows an example of an inductively coupled plasma reactor for driving multiple radio frequency antennas in series according to a second embodiment of the present invention. Referring to FIG. 17, the inductively coupled plasma reactor according to the second embodiment of the present invention has the same configuration as the first embodiment described above. However, the multiple radio frequency antennas 30 and 32 are connected in series, and are supplied with a radio frequency through an impedance matcher 42 from one power supply 40.

18 to 21 are graphs illustrating various electrical connection schemes of the multiple radio frequency antenna of FIG. 17 and voltage-current characteristics of the multiple radio frequency antenna in each example. For example, as shown in FIG. 18, the first and second radio frequency antennas 30 and 32 are arranged in a flat spiral structure adjacent to each other at equal intervals. The radio frequency RFin is input to the outer end Np1 of the first radio frequency antenna 30 and the inner end Np2 is electrically connected to the outer end Nn1 of the second radio frequency antenna 32. The inner end Nn2 of the second radio frequency antenna 32 is grounded. Thus, as shown in Fig. 19, the first and second radio frequency antennas 30 and 32 are symmetrical (point symmetrical structure) from the outer ends Np1 and Nn1 to the inner ends Np2 and Nn2. Will have the same voltage difference. That is, the voltage difference is | V_H-V_M | = | V_M-V_L | Can be displayed as Where V_H is the maximum voltage of the radio frequency (RFin), V_M is the intermediate voltage of the radio frequency (RFin), and V_L is the minimum voltage of the radio frequency (RFin). The currents i_p and i_n of the first and the first radio frequency antennas 30 and 32 have the same direction.

As another example, as shown in FIG. 20, the first and second radio frequency antennas 30 and 32 are arranged in a flat spiral structure adjacent to each other at equal intervals. The radio frequency RFin is input to the outer end Np1 of the first radio frequency antenna 30, and the outer end Nn1 of the second radio frequency antenna 32 is grounded. The inner ends Np2 and Nn2 of the first and second radio frequency antennas 30 and 32 are connected to each other. The first and second radio frequency antennas 30, 32 thus have a current-voltage characteristic as shown in FIG. 21. That is, the voltage difference is the lowest at the two inner ends Np2 and Nn2 and the highest at the two outer ends Np1 and Nn1. The currents i_p and i_n of the first and second radio frequency antennas 30 and 32 have opposite directions.

The embodiments of the inductively coupled plasma reactor having multiple radio frequency antennas of the present invention described above are merely illustrative and those skilled in the art will appreciate that various modifications and equivalent implementations You can see that examples are possible. Accordingly, it is to be understood that the present invention is not limited to the above-described embodiments. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims. It is also to be understood that the invention includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the appended claims.

BRIEF DESCRIPTION OF THE DRAWINGS For a more complete understanding of the drawings used in the detailed description of the present invention, a brief description of each drawing is provided.

1 is a circuit diagram of an inductively coupled plasma reactor for driving multiple radio frequency antennas in parallel according to a first embodiment of the present invention.

2 is a plan view of a dielectric window in which multiple radio frequency antennas are installed.

3 is a cross-sectional view of an upper portion of an inductively coupled plasma reactor showing an example of installing a gas supply on top of a dielectric window.

4 is an enlarged cross-sectional view of an upper portion of an inductively coupled plasma reactor showing an enlarged trench portion of a dielectric window provided with multiple radio frequency antennas.

5 and 6 are views illustrating examples of a circuit configuration method of a power split supply unit.

7 to 14 are graphs illustrating various examples of a power split supply scheme and voltage-current characteristics of multiple radio frequency antennas in respective examples.

15A to 15E are diagrams illustrating various modifications of a current supply scheme and a core cover mounting structure of a multiple radio frequency antenna.

FIG. 16 is a view showing a variant in which multiple radio frequency antennas are respectively driven by separate power supplies.

17 is a diagram illustrating an example of driving multiple radio frequency antennas in series according to a second embodiment of the present invention.

18 to 21 are graphs showing examples of a current supply scheme of the multiple radio frequency antenna of FIG. 17 and voltage-current characteristics of the multiple radio frequency antenna in each example.

Description of the Related Art [0002]

10: reaction chamber 12: chamber body

16: substrate support 20: dielectric window

22: trench region 24: gas supply hole

30: first radio frequency antenna 32: second radio frequency antenna

34: core cover 40: power source

42: impedance matcher 44: power split supply

45: first output terminal 46: second output terminal

47: ground terminal 50: power source

52: power source 54: impedance matcher

60: gas supply unit 64: gas distribution plate

66: opening

Claims (17)

A reaction chamber having a plasma discharge region; And A multiple radio frequency antenna having a first radio frequency antenna and a second radio frequency antenna which are driven by receiving a radio frequency having a phase difference of the same frequency to provide induced electromotive force for plasma generation to an inner region of the reaction chamber, The first and second radio frequency antennas are arranged in a flat spiral structure adjacent to each other at equal intervals, The frequency of the non-inverting phase is input to the outer end of the first radio frequency antenna and the inner end is grounded, An inductively coupled plasma reactor in which an outer end of the second radio frequency antenna is grounded and a radio frequency of an inverted phase is input to an inner end thereof. The method according to claim 1, A power supply for supplying radio frequencies; And An inductively coupled plasma reactor comprising a power split supply unit for dividing a radio frequency supplied from a power source into two or more parallel frequency antennas in parallel so as to have a phase difference. The method according to claim 1, Two or more power sources for supplying radio frequencies to the multiple radio frequency antennas; And An inductively coupled plasma reactor comprising a phase controller for controlling radio frequencies supplied from two or more power sources to be supplied to multiple radio frequency antennas having a phase difference from each other. The method according to claim 1, An inductively coupled plasma reactor comprising a dielectric window installed between a multiple radio frequency antenna and an interior region of the reaction chamber. 5. The method of claim 4, The dielectric window is: A trench region in which multiple radio frequency antennas are installed; And An inductively coupled plasma reactor comprising one or more gas supply holes opened into the reaction chamber. 6. The method according to any one of claims 1 to 5, An inductively coupled plasma reactor comprising a core cover that covers multiple radio frequency antennas while the magnetic flux entrance points toward the interior of the reaction chamber. 5. The method of claim 4, Inductively coupled plasma reactor comprising a gas supply for supplying a process gas into the reaction chamber through the gas supply hole of the dielectric window. The method according to claim 1, And a substrate support provided in the reaction chamber to support the substrate to be processed, wherein the substrate support is any one of biased or not biased by receiving one or more radio frequencies. delete delete delete delete delete delete delete delete delete

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