KR100979187B1 - Dual plasma reactor for processing dual substrates with multi laser scanning line - Google Patents

Abstract

The dual plasma reactor for dual substrate processing having the multi-laser scanning line of the present invention includes a first reactor body constituting the first plasma reactor, a second reactor body constituting the second plasma reactor, and an interior of the first reactor body. A first capacitively coupled electrode assembly including a plurality of capacitively coupled electrodes for inducing plasma discharge, a second capacitively coupled electrode assembly including a plurality of capacitively coupled electrodes for inducing plasma discharge in the second reactor body; A main power source for supplying radio frequency power, and a laser source for constructing each of the multi-laser scanning lines consisting of a plurality of laser scan lines inside the first and second reactor bodies. According to the dual plasma reactor for dual substrate processing having the multi-laser scanning line of the present invention, a large-area plasma can be uniformly generated by the plurality of capacitively coupled electrodes and the multi-laser scanning line. In parallel driving of the plurality of capacitively coupled electrodes, a current balance is automatically achieved to uniformly control the capacitive coupling of the capacitively coupled electrodes to uniformly generate high-density plasma. Since a plurality of capacitively coupled electrodes and a multi-laser scanning line can be uniformly and widely scanned on the target substrate, a large-area plasma reactor for processing a large target substrate can be easily implemented. In addition, two or more large-area substrates can be processed at the same time, thereby increasing the substrate throughput per facility area.

Laser, capacitively coupled plasma, plasma reactor, current balancing

Description

DUAL PLASMA REACTOR FOR PROCESSING DUAL SUBSTRATES WITH MULTI LASER SCANNING LINE}

The present invention relates to a capacitively coupled plasma reactor for dual substrate processing, and more particularly, has a multi-laser scanning line capable of generating a large area of plasma more uniformly, thereby increasing the plasma processing efficiency for a large area of the target object. A dual plasma reactor for dual substrate processing.

Plasma is a highly ionized gas containing the same number of positive ions and electrons. Plasma discharges are used for gas excitation to generate active gases containing ions, free radicals, atoms, molecules. Active gases are widely used in various fields and are used in various semiconductor manufacturing processes for manufacturing devices such as integrated circuit devices, liquid crystal displays, solar cells, etc., for example, etching, deposition, cleaning and ashing. It is used in various ways such as ashing.

There are a number of plasma sources for generating plasma, and the representative examples are capacitive coupled plasma and inductive coupled plasma using radio frequency. Capacitively coupled plasma sources have the advantage of high process productivity compared to other plasma sources due to their high capacity for precise capacitive coupling and ion control. However, when the capacitively coupled electrode is enlarged in order to process an enlarged substrate, the electrode may be deformed or damaged by deterioration of the electrode. In this case, the electric field strength may be uneven, which may result in uneven plasma density and contaminate the inside of the reactor. In the case of an inductively coupled plasma source, it is also difficult to obtain a uniform plasma density when the area of the induction coil antenna is increased.

On the other hand, various processing apparatuses using a laser have been provided. A semiconductor manufacturing process using a laser includes a photoexcited chemical vapor deposition process. In addition, various processes such as deposition, etching, annealing, and cleaning of the substrate to be processed are performed by using a laser in various processes.

In recent years, the semiconductor manufacturing industry has been further improved due to various factors such as ultra miniaturization of semiconductor devices, the enlargement of silicon wafer substrates for manufacturing semiconductor circuits, the enlargement of glass substrates for manufacturing liquid crystal displays, and the development of new target materials. Plasma treatment technology is required. In particular, there is a need for improved plasma sources and plasma processing techniques that have good processing capabilities for large area substrates.

The enlargement of the substrate to be processed causes the enlargement of the entire production equipment. Larger production facilities increase the overall plant area, resulting in increased production costs. Therefore, there is a need for a plasma reactor and a plasma processing system capable of minimizing the installation area. In particular, in the semiconductor manufacturing process, productivity per unit area is one of the important factors affecting the price of the final product. Thus, technologies are being provided to effectively arrange the components of a production plant in a way to increase productivity per unit area. For example, a plasma reactor for processing two substrates in parallel is provided. However, most plasma reactors that process two substrates to be processed in parallel are equipped with two plasma sources, which does not substantially minimize process equipment.

If two or more plasma reactors are arranged vertically or horizontally in parallel, the common part of each component can be shared and two substrates can be processed in parallel by one plasma source. There will be several benefits to minimization.

As in any industry, many efforts are underway in the semiconductor industry to increase productivity. In order to increase productivity, production facilities basically need to be increased or improved. However, simply increasing the production equipment has a problem that not only the expansion cost of the process equipment but also the space equipment of the clean room increases, resulting in high cost.

It is an object of the present invention to provide a dual plasma reactor for dual substrate processing having a multi-laser scanning line capable of generating and maintaining a large area of plasma uniformly.

Another object of the present invention is to provide a dual plasma reactor for dual substrate processing having a multi-laser scanning line capable of uniformly controlling the capacitive coupling of the capacitively coupled electrodes to uniformly generate high density plasma.

It is another object of the present invention to provide a dual plasma reactor for dual substrate processing having a multi-laser scanning line capable of uniformly controlling the current supply of the capacitively coupled electrode to uniformly generate a high density plasma.

It is still another object of the present invention to provide a dual substrate having a multi-laser scanning line which is easy to make a large area, can generate high density plasma uniformly, and can simultaneously process two or more large areas of the substrate to be treated with a high substrate throughput per facility area. It is to provide a dual plasma reactor for the treatment.

One aspect of the present invention for achieving the above technical problem relates to a dual plasma reactor for dual substrate processing having a multi-laser scanning line. The dual plasma reactor of the present invention comprises: a first reactor body constituting a first plasma reactor;

A second reactor body constituting a second plasma reactor; A first capacitively coupled electrode assembly including a plurality of capacitively coupled electrodes to induce plasma discharge inside the first reactor body; A second capacitively coupled electrode assembly including a plurality of capacitively coupled electrodes for inducing plasma discharge in the second reactor body; A main power source for supplying radio frequency power; And a laser source for constructing each of the multi-laser scanning lines comprising a plurality of laser scan lines inside the first and second reactor bodies.

In one embodiment, a distribution circuit for distributing the radio frequency power provided from the main power source to each of the plurality of capacitively coupled electrodes of the first and second capacitively coupled electrode assemblies.

In one embodiment, an impedance matcher is arranged between the main power supply and the distribution circuit to perform impedance matching.

In one embodiment, the distribution circuit includes a current balancing circuit for adjusting the balance of the current supplied to the plurality of capacitive coupling electrodes of the first and second capacitive coupling electrode assembly.

In an embodiment, the current balancing circuit includes a plurality of transformers for balancing current while driving the plurality of capacitive coupling electrodes of the first and second capacitive coupling electrode assemblies in parallel, wherein the primary side of the plurality of transformers is The radio frequency is connected in series between the power input terminal and the ground, the secondary side is connected to the plurality of capacitive coupling electrodes of the first and second capacitive coupling electrode assembly.

In an embodiment, the secondary sides of the plurality of transformers each include a grounded intermediate tab, one end of the secondary side outputs a constant voltage and the other end of a negative voltage, and the constant voltage is a constant voltage of the plurality of capacitive coupling electrodes. The negative voltage as an electrode is provided to negative voltage electrodes of the plurality of capacitively coupled electrodes.

In one embodiment, the current balancing circuit includes a voltage level adjusting circuit that can vary the current balancing adjusting range.

In one embodiment, the current balancing circuit comprises a compensation circuit for compensation of leakage current.

In one embodiment, the current balancing circuit includes a protection circuit for preventing damage due to transient voltage.

In one embodiment, the first and second capacitively coupled electrode assemblies include an electrode mounting plate on which each of the plurality of capacitively coupled electrodes is mounted.

In one embodiment, each electrode mounting plate of the first and second capacitively coupled electrode assembly includes a plurality of gas injection holes, the gas into the first and second plasma reactor through the gas injection holes It includes a gas supply for supplying.

In one embodiment, the gas supply unit comprises a plurality of gas supply pipes.

In one embodiment, the plurality of gas supply pipes each include a control valve that can independently control the gas supply flow rate.

In one embodiment, the plurality of capacitively coupled electrodes has a multi-laser scanning line including a plurality of gas injection holes.

In one embodiment, the gas supply unit is not connected to the first gas supply path and the plurality of gas injection holes for supplying gas to the inside of the reactor body through a plurality of gas injection holes connected to the plurality of gas injection holes. It has a multi-laser scanning line including a second gas supply path for supplying gas into the inside of the reactor body through some other gas injection holes.

In one embodiment, the plurality of capacitively coupled electrode is composed of a hollow tube structure formed with a plurality of gas injection holes to function as a gas supply unit for supplying the reaction gas into the reactor body.

In one embodiment, the first and second plasma reactors have a support in which the substrate to be processed is placed, and the support is configured as either biased or unbiased.

In one embodiment, the support is biased by a single frequency power supply or two or more different frequency power supplies.

In one embodiment, the support includes an electrostatic chuck.

In one embodiment, the support comprises a heater.

In one embodiment, the support has a structure that is linearly or rotationally movable parallel to the substrate to be processed, and includes a drive mechanism for linearly or rotationally moving the support.

In one embodiment, the plurality of capacitively coupled electrodes includes a conductor region and an insulator region.

In one embodiment, the capacitively coupled electrode assembly includes an insulating layer configured between the plurality of capacitively coupled electrodes.

In example embodiments, the plurality of capacitively coupled electrodes include a plurality of constant voltage electrodes and a plurality of negative voltage electrodes, and the array structure of the constant voltage electrode and the negative voltage electrode is an alternating linear array structure, an array in a matrix form. And at least one array structure selected from the structure, the alternating spiral arrangement structure, and the mutually alternating concentric arrangement structure.

In one embodiment, the constant voltage electrode and the plurality of negative voltage electrodes have at least one structure selected from a barrier structure, a flat plate structure, a protrusion structure, a column structure, an annular structure, a spiral structure, a linear structure.

In one embodiment, the first and second reactor bodies each comprise a laser transmission window for injecting a laser beam therein, the laser source being through the laser transmission window of the first and second reactor bodies. One or more laser sources for causing a laser beam to be scanned therein to form the multi laser scanning line.

In one embodiment, the laser transmission window comprises two windows each configured to face each side wall of the first and second reactor bodies, and the laser source is adapted to receive a laser beam generated from the one or more laser sources. And a plurality of reflectors reflecting each of the two windows therebetween to form the multi laser scanning line.

In one embodiment, the multi-laser scanning line is a structure positioned between the electric field formed between the plurality of capacitively coupled electrodes, between the plurality of capacitively coupled electrodes and the support on which the substrate to be processed provided in the reactor body is placed. At least one selected from among a structure positioned in the structure, or a structure located between the gas injection hole for introducing the reaction gas into the first and second reactor body and the plurality of capacitive coupling electrode.

In one embodiment, the relative arrangement structure of the multi-laser scanning line and the plurality of capacitively coupled electrodes is characterized in that the reaction gas flowing into the first and second reactor body is the electrical energy by the capacitively coupled electrode and the multi-laser scanning A structure that accepts thermal energy by lines in a mixed manner, a structure in which a reaction gas introduced into the first and second reactor bodies first receives electrical energy delivered from the plurality of capacitively coupled electrodes, or the first and second The reaction gas introduced into the reactor body includes at least one selected from among structures that first receive thermal energy by the multi-laser scanning line.

According to the dual plasma reactor for dual substrate processing having the multi-laser scanning line of the present invention, a large-area plasma can be uniformly generated by the plurality of capacitively coupled electrodes and the multi-laser scanning line. In parallel driving of the plurality of capacitively coupled electrodes, a current balance is automatically achieved to uniformly control the capacitive coupling of the capacitively coupled electrodes to uniformly generate high-density plasma. Since a plurality of capacitively coupled electrodes and a multi-laser scanning line can be uniformly and widely scanned on the target substrate, a large-area plasma reactor for processing a large target substrate can be easily implemented. In addition, two or more large-area target substrates can be processed at the same time, thereby increasing the substrate throughput per facility area.

In order to fully understand the present invention, preferred embodiments of the present invention will be described with reference to the accompanying drawings. Embodiment of the present invention may be modified in various forms, the scope of the invention should not be construed as limited to the embodiments described in detail below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Therefore, the shape of the elements in the drawings and the like may be exaggerated to emphasize a more clear description. It should be noted that the same members in each drawing are sometimes shown with the same reference numerals. Detailed descriptions of well-known functions and constructions which may be unnecessarily obscured by the gist of the present invention are omitted.

1 is a view showing a plasma reactor according to a preferred embodiment of the present invention.

Referring to FIG. 1, a dual plasma reactor 2 according to a preferred embodiment of the present invention includes first and second plasma reactors 10 and 15 and first and second plasma reactors 10 and 15 configured in parallel. The first and second capacitively coupled electrode assemblies 30 and 35 and the laser source 80 are respectively provided for inducing plasma discharge, respectively. The gas supply unit 20 is provided between the first and second capacitively coupled electrode assemblies 30 and 35. In the first and second plasma reactors 10 and 15, the supports 12 and 17, on which the substrates 13 and 18 are placed, are opposed to the first and second capacitively coupled electrode assemblies 30 and 35. Is installed to the side. The gas supply unit 20 is configured between the first and second capacitively coupled electrode assemblies 30 to inject a gas provided from a gas supply source (not shown) to the gas injection of the first and second capacitively coupled electrode assemblies 30 and 35. The holes 32 and 37 are supplied into the first and second plasma reactors 10 and 15. The radio frequency power generated from the main power supply 40 may include a plurality of capacitively coupled electrodes provided in the first and second capacitively coupled electrode assemblies 30 and 35 through the impedance matcher 41 and the distribution circuit 50. 31, 33, 36, 38). The laser source 80 provides a laser for constructing a multi-laser scanning line consisting of a plurality of laser scan lines 82 inside the first and second reactor bodies 11, 16. The plasma generated by the first and second capacitively coupled electrode assemblies 30 and the multi-laser scanning lines are generated in the first and second reactor bodies 11 and 16, respectively, and the substrates to the substrates 13 and 18 are processed. Processing takes place.

The first and second plasma reactors 10 and 15 are provided with reactor bodies 11 and 16 and supports 12 and 17 on which substrates 13 and 18 are to be placed. The reactor bodies 11 and 16 can be rebuilt from metallic materials such as aluminum, stainless steel and copper. Or may be rewritten with coated metal, for example anodized aluminum or nickel plated aluminum. Or it may be rewritten as a refractory metal. Alternatively, it is also possible to reconstruct the reactor bodies 11, 16 entirely or in part from electrically insulating materials such as quartz, ceramics. As such, the reactor bodies 11, 16 may be rebuilt from any material suitable for the intended plasma process to be performed. The structure of the reactor bodies 11, 16 may have a structure suitable for the uniform generation of the plasma, for example, a circular structure, a square structure, or any other structure depending on the substrates 13 and 18 to be processed. .

The substrates 13 and 18 to be processed are, for example, substrates such as wafer substrates, glass substrates, plastic substrates, and the like for manufacturing various devices such as semiconductor devices, display devices, solar cells, and the like. The first and second plasma reactors 10, 15 are connected to a vacuum pump (not shown). One vacuum pump can be used to have a common exhaust structure, or a separate vacuum pump can be used to have an independent exhaust structure. In the embodiment of the present invention, the dual plasma reactor 2 is subjected to plasma treatment on the substrates 13 and 18 under low pressure below atmospheric pressure. However, the dual plasma reactor 2 of the present invention can also be used as an atmospheric plasma processing system for processing a substrate under atmospheric pressure.

2 is a perspective view illustrating a capacitively coupled electrode assembly and a gas supply unit, and FIG. 3 is a cross-sectional view of the capacitively coupled electrode.

Referring to FIG. 2, the gas supply unit 20 is installed between the first and second capacitive coupling electrode assemblies 30 and 35. The gas supply unit 20 includes a plurality of gas supply pipes 21 connected to a gas supply source (not shown). The plurality of gas supply pipes 21 are provided with control valves 25 that can control the gas supply flow rates independently of each other. Alternatively, the gas supply flow rates may be collectively controlled with respect to the plurality of gas supply pipes 21 or may be configured to be controlled in a mixed manner. Alternatively, the plurality of gas supply pipes 21 may be configured to enable control of the total and individual gas supply flow rates.

In the plurality of gas supply pipes 21, a plurality of gas injection ports 22 and 23 are connected to the plurality of gas injection holes 32 and 37 of the first and second electrode mounting plates 34 and 39. The gas provided from the gas supply source is evenly distributed through the plurality of gas supply pipes 21 so that the first and second plasma reactors are provided through the plurality of gas inlets 22 and 23 and the plurality of gas injection holes 32 and 37 corresponding thereto. It is sprayed evenly to the inside of (10, 15). The plurality of gas supply pipes 21 may be divided into two groups to form separate gas supply channels. It is possible to increase the uniformity of the plasma treatment by separating and supplying different gases.

The first and second capacitively coupled electrode assemblies 30 and 35 may include a plurality of capacitively coupled electrodes 31, 33, and 36 for inducing capacitively coupled plasma discharges in the first and second plasma reactors 10 and 15. , 38). A plurality of capacitively coupled electrodes 31, 33, 36, 38 are mounted on the respective electrode mounting plates 34, 39. The electrode mounting plates 34, 38 oppose the supports 12, 17 of the first and second plasma reactors 10, 15, and the plurality of capacitively coupled electrodes 31, 33, 36, 38 are horizontal or vertical. Arranged in the electrode mounting plates 34 and 39. The plurality of capacitively coupled electrodes 31, 33, 36, and 38 have a structure in which the plurality of constant voltage electrodes 33 and 38 and the negative voltage electrodes 31 and 36 are alternately arranged in parallel. The plurality of capacitively coupled electrodes 31 and 33 have a linear barrier structure protruding from the electrode mounting plate 34. As illustrated in FIG. 3, the plurality of capacitive coupling electrodes 31, 33, 36, and 38 may be configured of a conductor region 70 and an insulator region 71 surrounding the outside thereof. Alternatively, only the conductor region 70 may be provided. The shape and arrangement of the plurality of capacitive coupling electrodes 31, 33, 36, 38 may be variously modified as described below.

The electrode mounting plates 34 and 39 are provided with a plurality of gas injection holes 32 and 37. The plurality of gas injection holes 32 and 37 are configured at a predetermined interval between the plurality of capacitively coupled electrodes 31, 33, 36, and 38. The electrode mounting plates 34 and 39 may be made of a metal, a nonmetal, or a mixed material thereof. Of course, when the electrode mounting plates 34 and 39 are made of a metal material, the electrode mounting plates 34 and 39 have an electrically insulating structure between the capacitive coupling electrodes 31, 33, 36, and 38. The electrode mounting plates 34 and 39 are installed to form one sidewall of the reactor bodies 11 and 16, but may be installed along both the ceiling and the bottom side walls of the reactor bodies 11 and 16 to increase plasma treatment efficiency. Alternatively, one side wall of the reactor bodies 11 and 16 and both the ceiling and the bottom side wall surfaces of the reactor bodies 11 and 16 may be installed. Although not shown in detail, the electrode mounting plates 34 and 39 may include cooling channels or heating channels for proper temperature control.

4 is a partial cross-sectional view showing a modification of the capacitively coupled electrode configured with the gas nozzle.

Referring to FIG. 4, the capacitive coupling electrodes 31 and 33 may include a plurality of gas injection holes 73 along the length direction. Some of the gas injection holes 32-1 and 37-1 of the electrode mounting plate 34 are connected to the gas injection holes 73 of the capacitive coupling electrodes 31 and 33 and the other gas injection holes 32-2 of the electrode mounting plate 34. 37-2) is not connected. The gas supply unit 20 may include a part of the gas injection holes different from the first gas supply path for supplying the first gas into the reactor bodies 11 and 16 through some gas injection holes 32-1 and 37-1. It may be provided with a second gas supply path for supplying gas into the interior of the reactor body (11, 16) through 32-2, 37-2. The first and second gas supply paths of the gas supply unit 20 are configured to separate and supply different types of first and second gases as independent gas supply paths. Although not specifically illustrated in the drawings, as another example, a single supply of the reaction gas into the reactor bodies 11 and 16 may be performed only through the gas injection holes 73 provided in the capacitive coupling electrodes 31, 33, 36, and 38. It is also possible to construct a gas supply channel.

5 to 7 are views for explaining various configuration methods of the multi-laser scanning line.

5 to 7, the reactor bodies 11 and 16 of the first and second plasma reactors 10 and 15 are respectively provided with laser transmission windows 86 and 87 for scanning a laser beam therein. . The laser transmission windows 86, 87 may be composed of two windows 86, 87 configured to face the side walls of the reactor bodies 11, 17. The two windows 86 and 87 are installed to face the reactor bodies 11 and 17 so as to face each other, and may have a slit structure having the same length. The laser source 80 includes one or more laser sources 84. The laser source 84 scans a laser beam into the reactor bodies 11 and 16 through the laser transmission windows 86 and 87 to form a plurality of laser scan lines 82 inside the reactor bodies 11 and 16. To configure a multi-laser scanning line.

For example, as shown in FIG. 5, a plurality of laser sources 84 are arranged in proximity to the laser transmission window 86 on one side and correspondingly close to the laser transmission window 87 on the other side. A plurality of laser terminations 85 can be configured. Alternatively, as shown in FIG. 6, a plurality of laser sources 84 may be configured at intervals, and a plurality of reflectors 83 may be installed therebetween so that the laser beams generated from the laser sources 84 may be divided into two laser transmission windows. The plurality of laser scanning lines 82 can be formed by reciprocating and reflecting with the 86 and 87 interposed therebetween. Alternatively, as shown in FIG. 7, only one laser source 84 may be configured and a plurality of reflectors 83 may be configured.

As such, the multi-laser scanning lines may be configured inside the reactor bodies 11 and 16 using one or more laser sources 84, a plurality of reflectors 83, and one or more laser terminations 85. In this case, the plurality of laser scan lines 82 may be disposed between the plurality of capacitive coupling electrodes 31, 33, 36, and 38, and may be aligned with the plurality of gas injection holes 32 and 37. However, other various methods may be used to form the laser scanning line. And although a more detailed configuration and description have been omitted, those skilled in the art will appreciate that an optical system of a suitable structure may be used to scan a laser beam into the interior of the reactor body 11.

8 is a view for explaining various relative arrangement methods of a multi-laser scanning line and a capacitive coupling electrode. For convenience, only the first capacitive coupling electrode assembly 30 is shown.

As shown in FIG. 8A, a multi-laser scanning line composed of a plurality of laser scan lines 82 is positioned in an electric field formed between the plurality of capacitive coupling electrodes 31, 33, 36, 38. The structure can be taken. Alternatively, as shown in (b) of FIG. 8, the multi-laser scanning line may include a plurality of capacitively coupled electrodes 31, 33, 36, and 38 and a support 12 provided inside the reactor bodies 11 and 16. 17) may be located between. Alternatively, as shown in (c) of FIG. 8, the multi-laser scanning line may include a plurality of capacitively coupled electrodes 31 and 33 and gas injection holes 32 and 37 for introducing a reaction gas into the reactor bodies 11 and 16. , 36, and 38 may be disposed between the plurality of capacitive coupling electrodes 31, 33, 36, and 38. The plurality of capacitive coupling electrodes 31, 33, 36, and 38 may be spaced apart from the electrode mounting plates 34 and 39.

The relative arrangement of the multi-laser scanning line and the plurality of capacitively coupled electrodes 31, 33, 36, and 38 is about which reaction gas first receives energy. That is, as illustrated in (a) of FIG. 8, the reaction gas introduced into the reactor bodies 11 and 16 mixes electrical energy by the capacitive coupling electrode and thermal energy by the multi-laser scanning line. It can take the structure of acceptance. Alternatively, as illustrated in FIG. 8B, the reaction gas introduced into the reactor bodies 11 and 16 may first take electrical energy delivered from the plurality of capacitively coupled electrodes. Alternatively, as illustrated in (c) of FIG. 8, the reaction gas introduced into the reactor bodies 11 and 16 may take the structure of first receiving thermal energy by the multi-laser scanning line.

The relative arrangement structure of the multi-laser scanning line and the plurality of capacitive coupling electrodes 31, 33, 36, and 38 may be used in combination of one or more structures. The configuration and arrangement of the source 84, the reflector 83, and the laser termination portion 85 can be modified as appropriate.

9 illustrates various modified structures of a capacitively coupled electrode.

First, as shown in (a) of FIG. 9, the capacitive coupling electrodes 31, 33, 36, and 38 have a barrier structure, the cross section of which may have a 'T' type structure, and the head of the electrode It may be installed to be fixed to the mounting plate (34, 39) or to have the opposite arrangement position. As shown in FIG. 9B, the capacitive coupling electrodes 31, 33, 36, and 38 may have a plate-like structure having a narrow width. As shown in (c) or (d) of FIG. 9, the capacitive coupling electrodes 31, 33, 36, and 38 may have a triangular or inverted triangular structure. As shown in (e) to (g) of Figure 9, it may have a cylindrical rod-shaped structure, a divided elliptic structure or a rod-shaped structure of a standing elliptic structure. As such, the capacitive coupling electrodes 31, 33, 36, and 38 may be embodied in various cross-sectional structures such as circular, elliptical, and polygonal structures.

10 to 20 show various modifications of the planar structure and planar array structure of the capacitive coupling electrode.

First, as shown in FIG. 10, the plurality of constant voltage electrodes 33 and 38 and the plurality of negative voltage electrodes 31 and 33 constituting the plurality of capacitive coupling electrodes 31, 33, 36, and 38 alternate with each other. The plurality of gas injection holes (32, 37) may be arranged between them. As shown in FIG. 11 or 12, the plurality of constant voltage electrodes 33 and 38 and the negative voltage electrodes 31 and 36 have the same electrodes arranged in the same column (or row) in a structure divided into predetermined lengths (see FIG. 11). ), Different electrodes may be arranged alternately with each other (see FIG. 12). As shown in FIG. 13 or 14, the plurality of capacitively coupled electrodes 31, 33, 36, and 38 may be configured of a plurality of square or circular flat area electrodes arranged in a matrix form. As illustrated in FIG. 15, the plurality of capacitive coupling electrodes 31, 33, 36, and 38 may have a columnar structure such as a cylinder. 16 to 20, the plurality of capacitively coupled electrodes 31, 33, 36, and 38 may have a flat plate spiral structure or a concentric circle structure arranged alternately with each other. In this structure, the plurality of capacitively coupled electrodes 31, 33, 36, and 38 may be composed of only one constant voltage electrode 33 and 38 and the negative voltage electrodes 31 and 36. Alternatively, a plurality of constant voltage electrodes 33 and 38 and negative voltage electrodes 31 and 36 may be disposed, but the overall arrangement may have a flat spiral structure or a concentric circle structure.

As described above, the plurality of capacitively coupled electrodes 31, 33, 36, 38 may have at least one structure selected from a barrier structure, a plate structure, a protrusion structure, a column structure, a concentric or annular structure, a spiral structure, and a linear structure. Can be. The mutual arrangement of the plurality of constant voltage electrodes 33 and 38 and the negative voltage electrodes 31 and 36 may also include an alternate linear arrangement, a matrix arrangement, an alternate spiral arrangement, and an alternate concentric arrangement. It may have one or more array structures selected from a variety of array structures, such as. Although not shown in detail, an insulating layer may be formed between the plurality of capacitively coupled electrodes 31, 33, 36, and 38.

Again, with reference to FIG. 1, inside the reactor bodies 11, 16 of each of the first and second plasma reactors, supports 12, 17 for supporting the substrates 13, 18 are provided. . Each support 12, 17 is connected and biased to a bias power source 42, 43, 45, 46, respectively. For example, two bias power sources 42, 43, 45, 46, which supply different radio frequency power, are electrically connected and biased to the supports 12, 17 via impedance matchers 44, 47. . The dual bias structure of the supports 12 and 17 facilitates plasma generation inside the reactor bodies 11 and 16, and further improves plasma ion energy control to improve process yield. Alternatively, it may be modified to a single bias structure. Alternatively, the supports 12 and 17 may be modified to have a zero potential without supplying bias power. The substrate supports 12 and 17 may include an electrostatic chuck. Alternatively, the substrate supports 12 and 17 may include a heater.

Supports 12 and 17 may be of a fixed type. Alternatively, the supports 12 and 17 have a structure that can be linearly or rotationally moved in parallel with the substrates 13 and 18 and include driving mechanisms 4 and 5 for linearly or rotationally moving the supports 12 and 17. do. This moving structure of the supports 12 and 17 is for increasing the processing efficiency of the substrates 13 and 18 to be processed. Exhaust baffles 6 and 7 may be configured inside the reactor bodies 11 and 16 to uniformly exhaust the gas discharged to the gas outlets 8 and 9 configured in the reactor bodies 11 and 16.

The plurality of capacitive coupling electrodes 31, 33, 36, 38 are driven by receiving the radio frequency power generated from the main power supply 40 through the impedance matcher 41 and the distribution circuit 50. Induces capacitively coupled plasma inside the second plasma reactor (10, 15). The main power supply 40 may be configured using a radio frequency generator capable of controlling the output power without a separate impedance matcher. The radio frequency power generated from the main power source 40 is provided to the plurality of capacitively coupled electrodes 31, 33, 36, 38 through the impedance matcher 41. To this end, a distribution circuit 50 may be provided. The distribution circuit 50 distributes the radio frequency power provided from the main power supply 40 to the plurality of capacitive coupling electrodes 31, 33, 36, 38 to be driven in parallel. Preferably, the distribution circuit 50 is composed of a current balancing circuit so that the currents supplied to the plurality of capacitive coupling electrodes 31, 33, 36, 38 are automatically balanced with each other. Therefore, not only the large area plasma can be generated by the plurality of capacitive coupling electrodes 31, 33, 36, and 38, but also the large area plasma can be automatically generated by automatically balancing the currents in parallel driving the plurality of capacitive coupling electrodes. It can be generated and maintained more uniformly.

21 is a diagram illustrating an example of a distribution circuit.

Referring to FIG. 21, the distribution circuit 50 includes a plurality of transformers 52 that drive the plurality of capacitive coupling electrodes 31, 33, 36, and 38 in parallel and balance current. The primary side of the plurality of transformers 52 is connected in series between the power input terminal to which the radio frequency is input and ground, and one end of the secondary side is connected to the plurality of capacitive coupling electrodes 31, 33, 36, 38, and the other end thereof. Are commonly grounded. The plurality of transformers 52 equally divide the voltage between the power input terminal and the ground and divide the divided plurality of divided voltages among the plurality of capacitive coupling electrodes 31, 33, 36, 38. ) Among the plurality of capacitively coupled electrodes 31, 33, 36, and 38, the negative voltage electrodes 31 and 36 are commonly grounded.

Since the current flowing to the primary side of the plurality of transformers 52 is the same, the power supplied to the plurality of constant voltage electrodes 33 and 38 is also the same. When the impedance of any one of the plurality of capacitive coupling electrodes 31, 33, 36, 38 is changed to change the amount of current, the plurality of transformers 52 may interact with each other to achieve a current balance. Thus, the currents supplied to the plurality of capacitive coupling electrodes 31, 33, 36, 38 are continuously and automatically adjusted uniformly with each other. In the plurality of transformers 52, the winding ratios of the primary side and the secondary side are basically set to 1: 1, but this can be changed.

Although not shown in the drawing, the distribution circuit 50 including the current balancing circuit as described above may include a protection circuit for preventing a transient voltage from being generated in the plurality of transformers 52. The protection circuit prevents any one of the plurality of transformers 52 from being electrically open to increase the transient voltage on the transformer. The protection circuit of this function may be implemented by connecting a varistor to both ends of each primary side of the plurality of transformers 52, or may be implemented by using a constant voltage diode such as a Zener diode. . In addition, a compensation circuit such as a compensation capacitor 51 for compensating for leakage current may be added to each transformer 52 in the distribution circuit 50.

22 through 27 show various variations of the distribution circuit.

Referring to FIG. 22, the distribution circuit 50 of one variant includes an intermediate tap in which the secondary sides of the plurality of transformers 52 are grounded, respectively, and outputs a constant voltage at one end of the secondary side and a negative voltage at the other end thereof. The constant voltage is provided to the constant voltage electrodes 33 and 38 of the plurality of capacitively coupled electrodes, and the negative voltage is provided to the negative voltage electrodes 31 and 36 of the plurality of capacitively coupled electrodes.

Referring to FIG. 23, another variant distribution circuit 50a, 50b may be composed of separate first and second current balancing circuits 50a, 50b. The first and second current balancing circuits 50a and 50b are connected in parallel to the impedance matcher 41. The first current balancing circuit 50a is connected to the plurality of capacitive coupling electrodes 31 and 33 of the first capacitive coupling electrode assembly 30 and the second current balancing circuit 50b is connected to the second capacitive coupling electrode assembly 35. Each of the capacitive coupling electrodes 36 and 38 corresponds to each other.

With reference to FIGS. 24 and 25, another variation of the distribution circuit 50 can include a voltage level adjustment circuit 60 that can vary the current balancing adjustment range. The voltage level adjustment circuit 60 includes a coil 61 having a multi tap and a multi tap switching circuit 62 for connecting one of the multi taps to ground. The voltage level adjusting circuit 60 applies a voltage level that is varied according to the switching position of the multi-tap switching circuit 62 to the current balancing circuit 50, and the distribution circuit 50 supplies the voltage level adjusting circuit 60 to the voltage level adjusting circuit 60. The current balance adjustment range is changed by the voltage level determined by the. 26 and 27, the voltage level adjusting circuits 60a and 60b may be provided in the same manner when the first and second distribution circuits 50a and 50b are configured.

28 is a diagram for describing a capacitively coupled electrode assembly according to a modification, and FIG. 29 is a cross-sectional view of the capacitively coupled electrode of FIG. 28. 30 is a view showing a relative arrangement structure of the multi-laser scanning line and the capacitive coupling electrode in the modification.

Referring to FIG. 28, in the capacitively coupled electrode assemblies 30 ′ and 35 ′ according to another modification, the plurality of capacitively coupled electrodes 31 ′, 33 ′, 36 ′, and 38 ′ are provided with a plurality of gas injection holes 73. It consists of a hollow tube structure formed in the longitudinal direction. That is, the plurality of capacitively coupled electrodes 31 ′, 33 ′, 36 ′, 38 ′ function as a gas supply unit supplying a reaction gas into the reactor bodies 11 and 16. In this case, the gas supply may be divided into two groups to form a separate gas supply channel. It is possible to increase the uniformity of the plasma treatment by separating and supplying different gases.

As illustrated in FIG. 29, the plurality of capacitive coupling electrodes 31 ′, 33 ′, 36 ′, and 38 ′ may be configured of a conductor region 70 and an insulator region 71 surrounding the outside thereof. Alternatively, only the conductor region 70 may be provided. The shape and arrangement of the plurality of capacitive coupling electrodes 31 ′, 33 ′, 36 ′, 38 ′ may be variously modified as described above. In addition, the plurality of capacitively coupled electrodes 31 ′, 33 ′, 36 ′, 38 ′ may be connected to a gas supply source (not shown), and each may include a gas control valve 25 for individually controlling the gas flow rate. have. Alternatively, the gas supply flow rate may be collectively controlled or may be configured to be controlled in a mixed manner. As shown in FIG. 30, the multi-laser scanning line includes a plurality of capacitive coupling electrodes 31 ′, 33 ′, 36 ′ and 38 ′ and supports 12 and 17 provided inside the reactor bodies 11 and 16. ) Has a structure located between.

As described above, the dual plasma reactor 2 of the present invention illustrates an example in which the first and second plasma reactors 10 and 15 are implemented in a vertical parallel structure, but may be implemented in a horizontal parallel structure. have.

The embodiment of the dual plasma reactor for dual substrate processing with the multi-laser scanning line of the present invention described above is merely exemplary, and those skilled in the art to which the present invention pertains various modifications and It will be appreciated that other equivalent embodiments are possible. Accordingly, it is to be understood that the present invention is not limited to the above-described embodiments. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims. It is also to be understood that the present invention includes all modifications, equivalents, and substitutes within the spirit and scope of the invention as defined by the appended claims.

 The dual plasma reactor for dual substrate processing with the multi-laser scanning line of the present invention doubles the substrate to be treated in the plasma processing process for forming various thin films such as the manufacture of semiconductor integrated circuits, flat panel displays, and solar cells. In this case, it can be very usefully used. In particular, the capacitively coupled plasma reactor of the present invention can uniformly generate a large area of plasma by a plurality of capacitively coupled electrodes and a multi laser scanning line. In addition, it is possible to generate and maintain the plasma of a large area more uniformly by automatically balancing the currents in parallel driving the plurality of capacitive coupling electrodes.

1 is a view showing a plasma reactor according to a preferred embodiment of the present invention.

2 is a perspective view illustrating a capacitively coupled electrode assembly and a gas supply unit;

3 is a cross-sectional view of the capacitive coupling electrode.

4 is a partial cross-sectional view showing a modification of the capacitively coupled electrode configured with the gas nozzle.

5 to 7 are views for explaining various configuration methods of the multi-laser scanning line.

8 is a view for explaining various relative arrangement methods of a multi-laser scanning line and a capacitive coupling electrode.

9 illustrates various modified structures of a capacitively coupled electrode.

10 to 20 show various modifications of the planar structure and planar array structure of the capacitive coupling electrode.

21 is a diagram illustrating an example of a distribution circuit.

22 through 27 show various variations of the distribution circuit.

28 is a diagram for describing a capacitively coupled electrode assembly according to a modification.

FIG. 29 is a cross-sectional view of the capacitive coupling electrode of FIG. 28.

30 is a view showing a relative arrangement structure of the multi-laser scanning line and the capacitive coupling electrode in the modification.

* Description of the symbols for the main parts of the drawings *

6, 7: exhaust baffle 8, 9: gas outlet

10, 15: first and second plasma reactor 11, 16: reactor body

12, 17: support 13, 18: substrate to be processed

20: gas supply unit 21: gas supply pipe

22, 23: gas inlet 25: gas control switch

26: gas injection hole 30, 35: first and second capacitive coupling electrode assembly

31, 33, 36, 38: capacitive coupling electrode 32, 37: gas injection hole

34, 36: electrode mounting plate 40: main power source

41: impedance matcher 42, 43, 45, 46: bias power supply

44, 47: impedance matcher 50, 50a, 50b: distribution circuit

51: compensation capacitor 52: transformer

53: middle tap 60, 60a, 60b: voltage level adjustment circuit

61, 61a, 61b: multi-stage coils 62, 62a, 62b: multi-tap switching circuit

70: insulator region 71: conductor region

73: gas injection hole 75: gas injection hole

80: laser source 82: multi laser scanning line

83: reflector 85: laser termination

Claims (29)

A first reactor body constituting a first plasma reactor; A second reactor body constituting a second plasma reactor; A first capacitively coupled electrode assembly including a plurality of capacitively coupled electrodes to induce plasma discharge inside the first reactor body; A second capacitively coupled electrode assembly including a plurality of capacitively coupled electrodes for inducing plasma discharge in the second reactor body; A main power source for supplying radio frequency power; A distribution circuit for distributing the radio frequency power provided from the main power source to a plurality of capacitively coupled electrodes of each of the first and second capacitively coupled electrode assemblies; And A multi-laser scanning line including a laser source for constructing each multi-laser scanning line consisting of a plurality of laser scan lines inside the first and second reactor bodies, wherein the distribution circuit comprises the first and second A dual plasma reactor for dual substrate processing comprising a current balancing circuit for adjusting the balance of current supplied to the plurality of capacitive coupling electrodes of the capacitively coupled electrode assembly. delete The method of claim 1, 12. A dual plasma reactor for dual substrate processing with multiple laser scanning lines including an impedance matcher configured to perform impedance matching between the main power source and the distribution circuit. delete The method of claim 1, The current balancing circuit includes a plurality of transformers for balancing current while driving the plurality of capacitively coupled electrodes of the first and second capacitively coupled electrode assemblies in parallel; The primary side of the plurality of transformers are connected in series between a power input terminal to which the radio frequency is input and ground, and the secondary side is connected to a plurality of capacitively coupled electrodes of the first and second capacitively coupled electrode assemblies. Dual plasma reactor for dual substrate processing with lines. The method of claim 5, The secondary sides of the plurality of transformers each include a grounded middle tap, and one end of the secondary side outputs a constant voltage and the other end of a negative voltage, respectively. Wherein said constant voltage is a constant voltage electrode of said plurality of capacitively coupled electrodes and said negative voltage is provided to a negative voltage electrode of said plurality of capacitively coupled electrodes. The method of claim 1, The current balancing circuit is a dual plasma reactor for dual substrate processing having a multi-laser scanning line including a voltage level control circuit that can vary the current balance control range. The method of claim 1, Wherein said current balancing circuit comprises a compensation circuit for compensating for leakage current. The method of claim 1, Wherein said current balancing circuit comprises a protection circuit for preventing damage due to transient voltages. The method of claim 1, Wherein said first and second capacitively coupled electrode assemblies comprise multiple laser scanning lines comprising electrode mounting plates on which each of a plurality of capacitively coupled electrodes is mounted. The method of claim 10, Each electrode mounting plate of the first and second capacitively coupled electrode assemblies includes a plurality of gas injection holes, The dual plasma reactor for dual substrate processing having a multi-laser scanning line including a gas supply unit for supplying gas into the first and the second plasma reactor through the gas injection hole. The method of claim 11, The gas supply unit is a dual plasma reactor for dual substrate processing having a multi-laser scanning line including a plurality of gas supply pipes. The method of claim 12, The plurality of gas supply pipes are dual plasma reactors for dual substrate processing having a multi-laser scanning line each comprising a control valve that can independently control the gas supply flow rate. The method of claim 11, The plurality of capacitively coupled electrodes are dual plasma reactor for dual substrate processing having a multi-laser scanning line including a plurality of gas injection holes. The method of claim 14, The gas supply unit may include a first gas supply path configured to supply gas to the inside of the reactor body through some gas injection holes connected to the plurality of gas injection holes. Dual substrate processing having a multi-laser scanning line including a second gas supply path for supplying gas into the first and second reactor bodies through some other gas injection holes not connected to the plurality of gas injection holes. Dual plasma reactor for. The method of claim 1, The plurality of capacitively coupled electrodes are formed of a hollow tube structure in which a plurality of gas injection holes are formed, and the dual substrate processing having a multi laser scanning line functioning as a gas supply unit supplying a reaction gas into the first and second reactor bodies. Dual plasma reactor for. The method of claim 1, Wherein the first and second plasma reactors have a support on which a substrate to be processed is placed, and the support is either biased or unbiased. The method of claim 17, The support is dual plasma reactor for dual substrate processing having a multi-laser scanning line biased by a single frequency power supply or two or more different frequency power supplies. The method of claim 17, The support is a dual plasma reactor for dual substrate processing having a multi-laser scanning line including an electrostatic chuck. The method of claim 17, The support is a dual plasma reactor for dual substrate processing having a multi-laser scanning line including a heater. The method of claim 17, Wherein the support has a structure that is linearly or rotationally movable parallel to the substrate to be processed, and includes a drive mechanism for linearly or rotationally moving the support. The method of claim 1, Wherein said plurality of capacitively coupled electrodes have multiple laser scanning lines comprising a conductor region and an insulator region. The method of claim 1, Wherein said first and second capacitively coupled electrode assemblies comprise multiple laser scanning lines comprising an insulating layer comprised between said plurality of capacitively coupled electrodes. The method of claim 1, The plurality of capacitively coupled electrodes includes a plurality of constant voltage electrodes and a plurality of negative voltage electrodes, The array structure of the constant voltage electrode and the negative voltage electrode is a multi-laser scanning line having one or more array structures selected from an alternating linear array structure, a matrix type array structure, an mutually alternate spiral array structure, and an alternate alternating concentric array structure. Dual plasma reactor for dual substrate processing having a. The method of claim 24, The constant voltage electrode and the plurality of negative voltage electrodes are for dual substrate processing having a multi-laser scanning line having at least one structure selected from a barrier structure, a plate structure, a protrusion structure, a pillar structure, an annular structure, a spiral structure, and a linear structure. Dual plasma reactor. The method of claim 1, The first and second reactor bodies each comprising a laser transmission window for scanning a laser beam therein; The laser source has a dual laser scanning line including one or more laser sources for causing the laser beam to be scanned through the laser transmission window into the interior of the first and second reactor bodies to form the multi laser scanning line. Dual plasma reactor for substrate processing. The method of claim 26, The laser transmission windows comprise two windows each configured to face each sidewall of the first and second reactor bodies, The laser source includes a dual substrate having a multi-laser scanning line including a plurality of reflectors for reflecting a laser beam generated from the one or more laser sources, with each of the two windows interposed, to form the multi-laser scanning line. Dual plasma reactor for processing. The method of claim 1, The multi laser scanning line A structure positioned between an electric field formed between the plurality of capacitively coupled electrodes, a structure positioned between a plurality of capacitively coupled electrodes and a support on which a substrate to be processed provided in the first and second reactor bodies is placed, or the Dual plasma reactor for dual substrate processing having a multi-laser scanning line comprising a gas injection hole for introducing the reaction gas into the first and second reactor body and at least one selected from among the structures located between the plurality of capacitive coupling electrodes . The method of claim 1, The relative arrangement structure of the multi-laser scanning line and the plurality of capacitive coupling electrodes The reaction gas flowing into the first and second reactor bodies receives a mixture of electrical energy by the capacitive coupling electrode and thermal energy by the multi-laser scanning line, and flows into the first and second reactor bodies. A structure in which a reaction gas first receives electrical energy delivered from the plurality of capacitively coupled electrodes, or a structure in which a reaction gas introduced into the first and second reactor bodies first receives thermal energy by the multi-laser scanning line. A dual plasma reactor for dual substrate processing with multiple laser scanning lines comprising one or more structures.

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