KR100798352B1 - Plasma reactor with multi-arrayed discharging chamber and plasma processing system using the same - Google Patents

Abstract

Disclosed herein is a plasma reactor and a plasma processing system using the same. The plasma reactor has a plurality of discharge chambers arranged in parallel and has a reactor body composed entirely of ferrite material. A dielectric plate is installed at the bottom of the reactor body. Plasma injection slits are formed along each discharge chamber at the bottom of the reactor body. Inside the plurality of discharge chambers, antenna bundles are installed along the length direction of the discharge chamber at predetermined intervals from both sidewalls. The antenna bundle is supplied with radio frequency. The antenna bundle is wrapped and protected by an antenna protective cover. In the plasma reactor, the reactor body is entirely made of ferrite material, thereby enhancing the focusing of magnetic fluxes generated by the plurality of antenna bundles, thereby enhancing the transfer efficiency of inductive coupling energy and minimizing the flux loss rate. By increasing the number and length of the discharge chambers and antenna bundles, it is easy to expand to obtain a large-area plasma of a desired shape.

Plasma, Magnetic Core, Antenna

Description

Plasma reactor having a multi-array discharge chamber and plasma processing system using the same {PLASMA REACTOR WITH MULTI-ARRAYED DISCHARGING CHAMBER AND PLASMA PROCESSING SYSTEM USING THE SAME}

In order to more fully understand the drawings used in the detailed description of the invention, a brief description of each drawing is provided.

1 and 2 are perspective views showing an upper gas supply portion and a lower plasma injection slit of a plasma reactor according to a preferred embodiment of the present invention.

3 is a cross-sectional view of the plasma reactor and a partially enlarged view of the discharge chamber.

4 is a partially omitted perspective view of an antenna bundle respectively installed in a plurality of discharge chambers.

5 is a view illustrating an electrical connection structure of a plurality of antenna bundles and a ground electrode.

6A and 6B illustrate a serial or parallel connection structure of an antenna bundle.

7 is a cross-sectional view of a modified reactor body having a belt-shaped discharge chamber.

8 is a partially omitted perspective view of an antenna bundle mounted to a belt-shaped discharge chamber.

9 is a view schematically showing a plasma processing system using the plasma reactor of the present invention.

10 is a cross-sectional view of a vacuum chamber using the plasma reactor of the present invention.

* Description of the symbols for the main parts of the drawings

100: reactor body 200: gas supply

210: gas inlet 300, 820: substrate to be processed

400: plasma reactor 410: preheating device

420: transfer device 500, 550: substrate waiting portion

510 and 560: carrier 600 and 650: substrate transfer part

619, 660: substrate transfer robot 700: atmospheric pressure processing unit

800: vacuum process chamber 810: substrate support

TECHNICAL FIELD The present invention relates to a plasma reactor and a plasma processing system, and more particularly, to a plasma reactor having a multi-array discharge chamber capable of easily expanding a large area and obtaining high density plasma uniformly, and a plasma processing system using the same. .

Plasma is a highly ionized gas containing the same number of positive ions and electrons. Plasma discharges are used for gas excitation to generate active gases containing ions, free radicals, atoms, and molecules. The active gas is widely used in various fields and is typically used in a variety of semiconductor manufacturing processes such as etching, deposition, cleaning, ashing, and the like.

There are a number of plasma sources for generating plasma, and the representative examples are capacitive coupled plasma and inductive coupled plasma using radio frequency.

Capacitively coupled plasma sources have the advantage of high process productivity compared to other plasma sources due to their high capacity for precise capacitive coupling and ion control. On the other hand, since the energy of the radio frequency power supply is almost exclusively connected to the plasma through capacitive coupling, the plasma ion density can only be increased or decreased by increasing or decreasing the capacitively coupled radio frequency power. However, increasing radio frequency power increases ion bombardment energy. As a result, in order to prevent damage due to ion bombardment, radio frequency power is limited.

On the other hand, the inductively coupled plasma source can easily increase the ion density with the increase of the radio frequency power source, the ion bombardment is relatively low, it is known to be suitable for obtaining a high density plasma. Therefore, inductively coupled plasma sources are commonly used to obtain high density plasma. Inductively coupled plasma sources are typically developed using a radio frequency antenna (RF antenna) and a transformer (also called transformer coupled plasma). The development of technology to improve the characteristics of plasma, and to increase the reproducibility and control ability by adding an electromagnet or a permanent magnet or adding a capacitive coupling electrode.

As the radio frequency antenna, a spiral type antenna or a cylinder type antenna is generally used. The radio frequency antenna is disposed outside the plasma reactor and transmits induced electromotive force into the plasma reactor through a dielectric window such as quartz. Inductively coupled plasma using a radio frequency antenna can obtain a high density plasma relatively easily, but the plasma uniformity is affected by the structural characteristics of the antenna. Therefore, efforts have been made to improve the structure of the radio frequency antenna to obtain a uniform high density plasma.

However, in order to obtain a large plasma, it is limited to widen the structure of the antenna or increase the power supplied to the antenna. For example, it is known that a non-uniform plasma is generated in the radiographic state by a standing wave effect. In addition, when high power is applied to the antenna, the capacitive coupling of the radio frequency antenna increases, so that the dielectric window must be thickened, thereby increasing the distance between the radio frequency antenna and the plasma, thereby lowering power transmission efficiency. Losing problems occur.

An inductively coupled plasma using a transformer induces a plasma inside a plasma reactor using a toilet transformer, and the inductively coupled plasma completes the secondary circuit of the transformer. Conventional transformer-coupled plasma technologies have been developed by placing an external discharge tube in a plasma reactor or a closed core in a toroidal chamber or by embedding a transformer core inside a plasma reactor. ought.

The transformer coupled plasma improves the plasma characteristics and the transformer coupling structure to improve the plasma characteristics and energy transfer characteristics. In particular, in order to obtain a large-area plasma, the coupling structure of the transformer and the plasma reactor may be improved, a plurality of external discharge tubes may be provided, or the number of built-in transformer cores may be increased. However, simply increasing the number of external discharge tubes or increasing the number of transformer cores embedded therein makes it difficult to obtain high density large area plasma uniformly.

In the recent semiconductor manufacturing industry, plasma processing technology has been further improved due to various factors such as ultra-miniaturization of semiconductor devices, the enlargement of silicon wafer substrates for manufacturing semiconductor circuits, the enlargement of glass substrates for manufacturing liquid crystal displays, and the emergence of new target materials. This is required. In particular, there is a need for improved plasma sources and plasma processing techniques that have good processing capabilities for large area substrates.

In addition, the enlargement of the substrate to be processed causes an increase in the overall production equipment. Larger production facilities increase the overall plant area, resulting in increased production costs. Therefore, there is a need for plasma source and plasma processing systems that can minimize the installation area.

SUMMARY OF THE INVENTION An object of the present invention is to provide a plasma reactor having a multi-array discharge chamber capable of generating large-area plasma uniformly, to facilitate large area, to minimize the installation area, and to obtain a high-density plasma uniformly, and to plasma treatment using the same. The purpose is to provide a system.

One aspect of the present invention for achieving the above technical problem relates to a plasma reactor. The plasma reactor of the present invention includes: a reactor body having a plurality of discharge chambers arranged in parallel and made of ferrite; A dielectric plate installed on the bottom of the reactor body; A plurality of plasma injection slits formed along each discharge chamber at the bottom of the reactor body; A plurality of antenna bundles each installed along a longitudinal direction of the plurality of discharge chambers and receiving radio frequencies; And an antenna protective cover surrounding and protecting the antenna bundle.

In one embodiment, a plurality of gas inlet opening to the plurality of discharge chamber in the upper portion of the reactor body; And a gas supply having at least one gas distribution diaphragm and supplying process gas to the plurality of gas inlets.

In one embodiment, a first capacitive electrode member is provided in a longitudinal direction along both sidewalls of the plurality of discharge chambers.

In one embodiment, a second capacitive electrode member is provided on the bottom surface of the antenna protective cover in a longitudinal direction.

In one embodiment, the antenna protective cover comprises a dielectric material.

In one embodiment, the plurality of discharge chamber has a structure arranged in a parallel linear arrangement, the antenna bundle is wound so that magnetic flux entry and exit occurs up and down is installed in a linear structure at intervals with both side walls of the discharge chamber in the interior of the discharge chamber. .

In this embodiment, the plurality of discharge chambers are paired with two adjacent discharge chambers to form a discharge chamber having a belt structure, and the antenna bundle is wound so that magnetic flux entry and exit occurs up and down so that the amount of discharge chambers inside the discharge chamber is increased. It is installed in a belt structure at intervals from the side walls.

In this embodiment, a cooling water supply channel is provided in at least one of the reactor body or the plurality of antenna protective covers.

In this embodiment, the reactor body is provided at the top and includes a vacuum chamber for receiving the plasma output through the plasma injection slit.

Another aspect of the present invention relates to a plasma processing system using the above-described plasma reactor. The plasma processing system includes: an atmospheric pressure processing unit in which plasma processing is performed on an object to be processed under atmospheric pressure by plasma injected from a plasma reactor; A first to-be-processed substrate waiting portion on which the substrate to be processed waits; And a first conveyance section for conveying the object to be processed between the first substrate-processing substrate atmospheric section and the atmospheric pressure processing section.

In one embodiment, the first conveying unit includes a first conveying robot that conveys the substrate to be processed between the substrate waiting portion and the atmospheric pressure processing portion, and horizontally / vertically / vertically-vertically switches the state of the substrate to be processed.

In one embodiment, the atmospheric pressure treatment portion includes transfer means for transferring the substrate to be processed.

In one embodiment, the atmospheric pressure treatment portion includes preheating means for preheating the substrate to be processed.

In one embodiment, the substrate to be processed by the substrate to be processed in the atmospheric pressure processing unit; And a second conveying portion for conveying the object to be processed between the atmospheric pressure processing portion and the second substrate processing portion.

In one embodiment, the second conveying unit includes a second conveying robot that conveys the object to be processed between the substrate waiting portion and the atmospheric pressure processing portion, and horizontally / vertically / vertically-vertically switches the state of the substrate to be processed.

The embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited by the embodiments described below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Accordingly, the shape of the elements in the drawings and the like are exaggerated to emphasize a clearer description. In understanding the drawings, it should be noted that like parts are intended to be represented by the same reference numerals as much as possible. And detailed description of known functions and configurations that are determined to unnecessarily obscure the subject matter of the present invention is omitted.

(Example)

Hereinafter, with reference to the accompanying drawings illustrating a preferred embodiment of the present invention, a plasma reactor having a multi-array discharge chamber of the present invention and a plasma processing system using the same will be described in detail.

1 and 2 are perspective views showing an upper gas supply portion and a lower plasma injection slit of a plasma reactor according to a preferred embodiment of the present invention. 3 is a cross-sectional view of the plasma reactor and a partially enlarged view of the discharge chamber.

1 to 3, the plasma reactor 400 of the present invention includes a reactor body 100 having a plurality of discharge chambers 112 arranged in parallel. The reactor body 100 has a plate-shaped rectangular block structure as a whole. In the reactor body 100, a plurality of discharge chambers 112 are formed in parallel and arranged in parallel in parallel from one end to the other end. The reactor body 100 is entirely composed of ferrite. The reactor body 100 is made of ferrite, but will be described later to enhance the focusing of the induced magnetic flux generated by a plurality of antenna bundles to increase the transfer efficiency of the inductive coupling energy. A dielectric plate 118 is installed at the bottom of the reactor body 100. Plasma injection slits 114 are formed along each discharge chamber 112 at the bottom of the reactor body 100.

Reactor body 100 is formed with a plurality of gas inlet 116 opened in the upper portion of the plurality of discharge chamber (112). In addition, a gas supply unit 200 for supplying process gases to the plurality of discharge chambers 112 through the gas injection port 116 is installed. The gas supply 200 has one or more gas distribution diaphragms 220. The gas supply unit 200 is provided with a gas inlet 210 connected to a gas supply source (not shown).

Inside the plurality of discharge chambers 112, antenna bundles 130 are installed along the length direction of the discharge chamber 112 at a predetermined distance from both sidewalls. Antenna bundle 130 is supplied with a radio frequency. The antenna bundle 130 is wrapped and protected by the antenna protective cover 132. Antenna protection tube 132 is made of an electrically insulating material such as quartz, ceramic. As shown in FIG. 4, the antenna bundle 130 is formed of a strip-shaped thin conductive plate and wound so that magnetic flux entry and exit occurs up and down. The plurality of discharge chambers 112 has a discharge space divided into two parts in the longitudinal direction by the antenna bundle 130 and the antenna protective cover 132. The process gas is injected into the discharge chamber 112 through the gas injection port 116 and flows into the divided discharge space.

Inside the plurality of discharge chambers 112, the first capacitive electrode member 120 is selectively installed in the longitudinal direction along both sidewalls. The first capacitive electrode member 120 is electrically grounded and capacitively coupled with the antenna bundle 130. Thus, the generation of inductively coupled plasma by the antenna bundle 130 and the generation of capacitively coupled plasma by the first capacitive electrode member 120 and the antenna bundle 130 are combined to generate plasma and plasma ion energy. Facilitates precise adjustment of the In addition, the second capacitive electrode member 122 may be selectively installed on the bottom surface of each antenna protective cover 132 in the longitudinal direction.

Although not shown in the figure, a cooling water supply channel may be provided at any one or both sides of the reactor body 100 or the plurality of antenna protection covers 132. For example, a cooling water supply channel may be formed in an area between the plurality of discharge chambers 112 of the reactor body 100. Alternatively, the inside of the antenna protective cover 132 may be used as a cooling water supply channel. At this time, the coolant and the antenna bundle 130 are properly insulated.

Although eight discharge chambers 112 are illustrated in the drawing, the number of discharge chambers 112 or more may be reduced. At least one or two discharge chambers 112 may constitute the reactor body 100. That is, the length and number of the discharge chambers 112 may increase or decrease according to the processing area of the object to be processed. In addition, the structure of the reactor body 100 may be manufactured in a different structure according to the shape of the workpiece to be processed. For example, in order to process a disk-shaped workpiece, the lengths of the plurality of discharge chambers 112 may be different from each other to form a circular shape as a whole.

FIG. 5 is a diagram illustrating an electrical connection structure of a plurality of antenna bundles and a ground electrode, and FIGS. 6A and 6B are views illustrating a series or parallel connection structure of an antenna bundle. Referring to the drawings, a plurality of antenna bundles 130 are electrically connected to a power source 140 providing a radio frequency through an impedance matcher 142. In this case, the plurality of antenna bundles 130 may be connected in series as shown in FIG. 6A or in parallel as shown in FIG. 6B. Or it may have a mixed electrical connection structure in series and parallel manner.

In the plasma reactor 400 as described above, when the process gas is supplied to the plurality of discharge chambers 112, and the radio frequency is supplied to the plurality of antenna bundles 130 from the power supply source 140, the plurality of discharge chambers 112 are provided. Inductively coupled plasma is generated and sprayed through a plurality of plasma spraying slits 114. In particular, since the reactor body 100 is entirely made of a ferrite material, by strengthening the focusing of the magnetic flux generated in the plurality of antenna bundles 130 to enhance the transmission efficiency of the inductive coupling energy and the magnetic flux loss rate is minimized.

In addition, when the first capacitive coupling electrode 120 and the second capacitive coupling electrode 122 are installed, the generation of the capacitively coupled plasma is performed together with the generation of the inductively coupled plasma. This capacitive and inductive coupling facilitates the precise control of plasma generation and plasma ion energy in the vacuum chamber 100. This maximizes process productivity.

The plasma reactor 100 of the present invention can generate a large area of plasma uniformly with high density. In particular, by increasing the number and length of the discharge chamber 112 and the antenna bundle 130, it is easy to expand to obtain a large-area plasma of the desired shape. In addition, the structure of the plasma reactor 400 can be configured very thin to minimize the area of the facility. The installation method of the plasma reactor 400 can be installed vertically as well as horizontally, and has high flexibility to install variously at any angle.

7 is a cross-sectional view of a modified reactor body having a belt-shaped discharge chamber, and FIG. 8 is a partially omitted perspective view of the antenna bundle mounted to the belt-shaped discharge chamber. 7 and 8, in the modified reactor body 100a, two adjacent discharge chambers are paired to form a discharge chamber 112a having a belt structure. In addition, the antenna bundle 130a is also wound so that magnetic flux entry and exit occurs up and down and is installed in a belt structure at intervals with both sidewalls of the discharge chamber.

9 is a view schematically showing a plasma processing system using the plasma reactor of the present invention. Referring to FIG. 9, the plasma processing system performs plasma processing on the substrate 300 under atmospheric pressure using the plasma reactor 400 as described above. The substrate 300 to be processed is, for example, a glass substrate for liquid crystal display manufacture or a large silicon wafer substrate. The plasma processing system includes an atmospheric pressure processing unit 700 in which the plasma reactor 400 is installed. In the atmospheric pressure processing unit 700, plasma processing is performed on a substrate to be processed by plasma injected from the plasma reactor 700 at atmospheric pressure.

In front of the atmospheric pressure processing unit 700, a first processing substrate waiting unit 500 in which the processing target substrate 300 waits is provided, and the first processing substrate waiting unit 500 and the atmospheric pressure processing unit 700 are provided. The 1st conveyance part 600 which conveys the board | substrate 300 to be processed between is provided. The first substrate to be processed 500 includes a carrier 510 in which the substrate 300 is stacked and stored. The first transfer unit 600 is provided with a first transfer robot 610 for carrying the substrate 300. In the drawing, for convenience, the first transport robot 610 briefly shows only one robot arm.

Atmospheric pressure processing unit 700 is provided with a plasma reactor 400, the transport means 420 to be transported below the substrate is installed. The conveying means 420 may, for example, constitute a conveyor system with rollers for handling. Preheating means 410 for preheating the substrate 300 may be provided at the front end of the plasma reactor 400. The preheating means 410 can be constructed using a plurality of halogen lamps and reflective shades, for example.

The second to-be-processed substrate waiting part 550 which the processed to-be-processed substrate 300 waits is provided in the back of the atmospheric pressure process part 700, The 2nd to-be-processed substrate waiting part 550 and the atmospheric pressure processing part 700 are provided. The 2nd conveyance part 650 in which conveyance of the to-be-processed substrate 300 is performed is provided in between. The second substrate to be processed 550 includes a carrier 560 on which the processed substrate 300 is stacked and stored. The 2nd conveyance part 650 is equipped with the 2nd conveyance robot 660 which conveys the processed to-be-processed board | substrate 300. FIG. In the drawing, the second carrier robot 660 briefly shows only one robot arm for convenience.

  The plasma reactor 400 may be installed vertically in the atmospheric pressure processing unit 700. In this case, the first and second transfer robots 610 and 660 may transfer the substrate to be processed, but the state of the substrate 300 may be changed. Toggle horizontal-vertical / vertical-horizontal.

As described above, the plasma reactor 400 of the present invention may be used in a plasma processing system that performs plasma processing on a substrate under atmospheric pressure. The 1st conveyance part 600 and the 1st to-be-processed board which are comprised in the front without forming the 2nd conveyance part 650 and the 2nd to-be-processed board | substrate waiting part 550 which are comprised behind the atmospheric pressure process part 700 are carried out. Only the standby unit 500 may be configured.

10 is a cross-sectional view of a vacuum plasma processing chamber using the plasma reactor of the present invention. Referring to FIG. 10, the vacuum chamber 800 may be configured using the plasma reactor 400. The plasma reactor 400 is installed above the vacuum chamber 800, and the plasma generated by the plasma reactor 400 is accommodated in the vacuum chamber 800. The substrate support 810 on which the substrate 820 is disposed is provided in the vacuum chamber 800. The substrate 820 to be processed is, for example, a glass substrate for liquid crystal display manufacture or a large silicon wafer substrate.

The substrate support 810 may be connected to a power supply (not shown) for supplying bias power. The substrate support 810 may include a configuration for heating or cooling to adjust the temperature of the substrate, and may include mechanical or electrical chucking means for chucking the substrate. The vacuum chamber 800 is connected to a vacuum pump (not shown) for maintaining the vacuum.

As described above, the plasma reactor 400 of the present invention may configure an atmospheric pressure plasma processing system or a vacuum chamber to plasma-process a large-area target substrate.

The plasma reactor having multiple arrayed discharge chambers and the plasma processing system using the same according to the present invention can be variously modified and can take various forms. It is to be understood, however, that the present invention is not limited to the specific forms referred to in the above description, but rather includes all modifications, equivalents and substitutions within the spirit and scope of the invention as defined by the appended claims. It should be understood to do.

According to the plasma reactor having a multi-array discharge chamber of the present invention as described above and the plasma processing system using the same, the plasma reactor 400 is composed entirely of ferrite material, so that a plurality of antenna bundles ( The concentration of magnetic flux generated at 130) is enhanced to enhance the transfer efficiency of inductive coupling energy and to minimize the flux loss rate. In addition, when the first capacitive coupling electrode 120 and the second capacitive coupling electrode 122 are installed, the generation of the capacitively coupled plasma is performed together with the generation of the inductively coupled plasma. This capacitive and inductive coupling facilitates the precise control of plasma generation and plasma ion energy in the vacuum chamber 100. This maximizes process productivity. In addition, the plasma reactor 100 of the present invention can generate a large area of plasma uniformly with high density. In particular, by increasing the number and length of the discharge chamber 112 and the antenna bundle 130, it is easy to expand to obtain a large-area plasma of the desired shape. In addition, since the structure of the plasma reactor 400 can be configured very thin, the area of the facility can be minimized. The installation method of the plasma reactor 400 can be installed vertically as well as horizontally, and has high flexibility to install variously at any angle.

Claims (15)

A reactor body comprising a plurality of discharge chambers arranged in parallel and made of ferrite; A dielectric plate installed on the bottom of the reactor body; A plurality of plasma injection slits formed along each discharge chamber at the bottom of the reactor body; A plurality of antenna bundles each installed along a longitudinal direction of the plurality of discharge chambers and receiving radio frequencies; And A plasma reactor comprising an antenna protective cover surrounding and protecting the antenna bundle. According to claim 1, A plurality of gas inlet opening to the plurality of discharge chamber in the upper portion of the reactor body; And And a gas supply having at least one gas distribution diaphragm and supplying process gas to the plurality of gas inlets. The plasma reactor of claim 1, further comprising a first capacitive electrode member disposed in a longitudinal direction along both sidewalls of the plurality of discharge chambers. The plasma reactor of claim 1, further comprising a second capacitive electrode member disposed in a longitudinal direction on a bottom surface of the antenna protective cover. The plasma reactor of claim 1, wherein the antenna protective cover comprises a dielectric material. The discharge chamber of claim 1, wherein the plurality of discharge chambers have a structure in which the discharge chambers are linearly arranged in parallel, and the antenna bundles are wound so that magnetic flux entry and exit occurs up and down, and are installed in a linear structure at intervals between both sidewalls of the discharge chamber. Plasma reactor. The discharge chamber of claim 1, wherein the plurality of discharge chambers are paired with two adjacent discharge chambers to form a discharge chamber having a belt structure, and the antenna bundle is wound so that magnetic flux entry and exit occurs up and down. Plasma reactor is installed in a belt structure spaced from the side wall. The plasma reactor of claim 1, further comprising a cooling water supply channel provided in at least one of the reactor body or the plurality of antenna protective covers. The plasma reactor of claim 1, wherein the reactor body includes a vacuum chamber installed at an upper portion thereof to receive a plasma output through the plasma injection slit. In the plasma processing system using the plasma reactor according to any one of claims 1 to 9, An atmospheric pressure treatment unit in which plasma treatment is performed on the substrate under atmospheric pressure by the plasma injected from the plasma reactor; A first to-be-processed substrate waiting portion on which the substrate to be processed waits; And A plasma processing system comprising a first conveying section for conveying an object to be processed between the first to-be-processed substrate waiting section and the atmospheric pressure processing section. The plasma processing apparatus of claim 10, wherein the first transfer unit includes a first transfer robot configured to transfer the substrate to be processed between the substrate substrate standby portion and the atmospheric pressure treatment portion, and to change the state of the substrate to be horizontally-vertically / vertically-horizontally. system. The plasma processing system according to claim 10, wherein the atmospheric pressure processing portion includes transfer means for transferring a substrate to be processed. 11. The plasma processing system of claim 10, wherein the atmospheric pressure processing portion includes preheating means for preheating the substrate to be processed. 12. The apparatus of claim 10, further comprising: a second to-be-processed substrate waiting unit on which the substrate to be processed processed by the atmospheric pressure processing unit stands; And An atmospheric pressure plasma processing system comprising a second conveying portion for conveying a workpiece between an atmospheric pressure processing portion and a second substrate processing portion. 15. The plasma processing of claim 14, wherein the second conveying unit includes a second conveying robot that conveys the object between the substrate-waiting portion and the atmospheric pressure processing portion, and horizontally-vertically / vertically-vertically switches the state of the substrate to be processed. system.

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