KR20110131834A - Linear plasma generator and plasma process system - Google Patents

Abstract

PURPOSE: A linear plasma generator and a plasma processing system using the same are provided to adjust the amount of jetted plasma, thereby adjusting the efficiency for processing plasma. CONSTITUTION: A linear plasma generator(10) is made of a discharge tube body(30), an antenna coil, and a plasma jetting unit(40). The discharge tube body has a straight shape. A gas supply unit(20) is formed on the top of the discharge tube body. The antenna coil is wound on the discharge tube body to induce plasma into the discharge tube body. The discharge tube body wound on the antenna coil comprises a dielectric window. The plasma jetting unit is installed in the lower part of the discharge tube body.

Description

LINEAR PLASMA GENERATOR AND PLASMA PROCESS SYSTEM}

The present invention relates to a linear plasma generator and a plasma processing system using the same, and more particularly, to a linear plasma generator for linearly supplying a plasma for uniform processing of a substrate to be processed and a plasma processing system using the same.

Plasma is a highly ionized gas containing the same number of positive ions and electrons. Plasma discharges are used for gas excitation to generate active gases containing ions, free radicals, atoms, molecules. Active gases are widely used in various fields and are used in various semiconductor manufacturing processes for manufacturing devices such as integrated circuit devices, liquid crystal displays, solar cells, etc., for example, etching, deposition, cleaning and ashing. It is used in various ways such as ashing.

There are a number of plasma sources for generating plasma, and the representative examples are capacitive coupled plasma and inductive coupled plasma using radio frequency. Capacitively coupled plasma sources have the advantage of high process productivity compared to other plasma sources due to their high capacity for precise capacitive coupling and ion control. However, when the capacitively coupled electrode is enlarged in order to process an enlarged substrate, the electrode may be deformed or damaged by deterioration of the electrode. In this case, the electric field strength may be uneven, which may result in uneven plasma density and contaminate the inside of the reactor. In the case of an inductively coupled plasma source, it is also difficult to obtain a uniform plasma density when the area of the induction coil antenna is increased. In addition, when heating a large substrate to be treated at a high temperature at a time, the surface of the substrate may be agglomerated or deformed, and damage may occur.

In recent years, the semiconductor manufacturing industry has been further improved due to various factors such as ultra miniaturization of semiconductor devices, the enlargement of silicon wafer substrates or substrates to be processed such as glass or plastic substrates for manufacturing semiconductor circuits, and the development of new materials to be processed. Plasma treatment technology is required. In particular, there is a need for improved plasma sources and plasma processing techniques that have good processing capabilities for large area substrates. Furthermore, various semiconductor manufacturing apparatuses using lasers have been provided. Semiconductor manufacturing processes using lasers have been widely applied to various processes such as deposition, etching, annealing, cleaning, and the like on a substrate to be processed. In the case of a semiconductor manufacturing process using such a laser, not only the above-mentioned problems and processing are expensive but also the processing time is increased.

The enlargement of the substrate to be processed causes the enlargement of the entire production equipment. Larger production facilities increase the overall plant area, resulting in increased production costs. Therefore, there is a need for a plasma reactor and a plasma processing system capable of minimizing the installation area. In particular, in the semiconductor manufacturing process, productivity per unit area is one of the important factors affecting the price of the final product.

SUMMARY OF THE INVENTION An object of the present invention is to provide a linear plasma generator capable of efficiently treating a substrate while minimizing damage to the substrate by providing plasma to the substrate to be processed linearly and a plasma processing system using the same.

One aspect of the present invention for achieving the above technical problem relates to a linear plasma generator and a plasma processing system using the same. The linear plasma generator of the present invention is provided with at least one gas inlet is provided with a discharge tube body of the hollow type receiving a process gas; An antenna coil for inducing plasma discharge inductively coupled to the inside of the discharge tube body; And plasma distribution means for discharging the plasma induced in the discharge tube body to the outside of the discharge tube body.

In one embodiment, the linear plasma generator further comprises a gas supply for supplying a process gas into the discharge tube body.

The gas supply unit may include: a gas inlet receiving a process gas from a gas source; It includes a plurality of gas outlets for supplying the process gas supplied from the gas inlet into the discharge tube body, the gas outlet is connected to the gas inlet of the discharge tube body.

In one embodiment, the discharge tube body includes a plurality of capacitively coupled electrodes for inducing capacitively coupled plasma discharge.

In one embodiment, a power supply source for supplying radio frequency power to the antenna coil and the capacitive coupling electrode, respectively.

In one embodiment, the plasma spraying means is a lower body installed on the lower end of the discharge tube body; A distribution tube mounted inside the lower body; And a distribution plate installed to be detachable at a lower end of the distribution pipe.

In one embodiment, the distribution pipe includes at least one opening in the upper and lower portions to allow the plasma to pass through, and the distribution plate includes at least one injection hole for the plasma to pass through.

In one embodiment, it includes a ferrite core cover covering the antenna coil and provided with a magnetic flux entrance and exit toward the discharge tube body.

In one embodiment, the discharge tube body includes a dielectric window so that the induced electromotive force by the antenna coil can be transferred into the discharge tube body.

In one embodiment, the plasma spraying means includes a magnet to uniform the plasma by magnetic force.

In one embodiment, the plasma injection means further comprises a cooling water supply line.

In one embodiment, the plasma injection means further comprises a gas supply nozzle for receiving a process gas independently.

The plasma processing system of the present invention comprises a linear plasma generator; At least one process chamber in which the linear plasma generator is installed; It is provided in the process chamber includes a transport means for transporting the substrate.

In one embodiment, the transfer means is a structure for transferring the substrate in either horizontal or vertical.

In one embodiment, the plurality of process chambers perform the same substrate processing process or perform different substrate processing processes.

According to the linear plasma generator of the present invention and the plasma processing system using the same, it is possible to efficiently process the target substrate while minimizing damage to the entire surface of the target substrate to a high temperature by providing plasma to the target substrate linearly. In addition, the plasma treatment efficiency may be controlled by adjusting the injection amount of plasma injected from the linear plasma generator. In addition, it can be used in various fields such as heat treatment, deposition, cleaning, etc. according to the type of gas used.

1 is a perspective view showing a linear plasma generator according to a preferred embodiment of the present invention.
FIG. 2 is a cross-sectional view illustrating a cross section of AA illustrated in FIG. 1.
3 is an exploded perspective view for confirming the coupling structure of the plasma injection means of the linear plasma generator.
4 illustrates various shapes of a distribution plate of the linear plasma generator.
5 is a cross-sectional view briefly illustrating an antenna coil wound in various ways on a discharge tube body.
FIG. 6 is a cross-sectional view illustrating a state in which a means for guiding plasma injected from a linear plasma generator is provided.
7 is a cross-sectional view illustrating a state in which a ferrite core is installed to surround the antenna coil.
8 is a sectional view showing a plasma jet means including a magnet.
9 is a view showing a plasma injection means including a second process gas supply structure.
FIG. 10 is a side view schematically illustrating a structure in which a linear plasma generator is installed to process a substrate to be transported horizontally thereon.
FIG. 11 is a side view briefly illustrating a structure in which a linear plasma generator is installed to process a substrate to be transported horizontally from below.
12 is a side view schematically illustrating a structure in which a linear plasma generator is installed to process a substrate to be transferred vertically.
FIG. 13 is a plan view illustrating a state in which a linear plasma generator is arranged such that injection holes through which plasma is injected are alternately positioned.

In order to fully understand the present invention, preferred embodiments of the present invention will be described with reference to the accompanying drawings. Embodiment of the present invention may be modified in various forms, the scope of the invention should not be construed as limited to the embodiments described in detail below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Therefore, the shape of the elements in the drawings and the like may be exaggerated to emphasize a more clear description. It should be noted that the same members in each drawing are sometimes shown with the same reference numerals. Detailed descriptions of well-known functions and configurations that are determined to unnecessarily obscure the subject matter of the present invention are omitted.

1 is a perspective view showing a linear plasma generator according to a preferred embodiment of the present invention, Figure 2 is a cross-sectional view showing a cross-section of A-A shown in FIG.

1 and 2, the linear plasma generator 10 of the present invention comprises a discharge tube body 30, an antenna coil 34, and a plasma spraying means 40. As shown in FIG. Discharge tube body 30 is formed in a hollow form as a whole. The discharge tube body 30 is provided with one or more gas inlets to receive a process gas provided from a gas supply source (not shown). In the embodiment of the present invention, the upper and lower surfaces of the discharge tube body 30 are completely opened so that the gas supply unit 20 is provided on the upper portion of the discharge tube body 30. The antenna coil 34 is wound around the discharge tube body 30 to induce plasma inside the discharge tube body 30. At this time, the discharge tube body 30 to which the antenna coil 34 is wound is provided with a dielectric window 38 to transmit induced electromotive force into the discharge tube body 30. The induced plasma is injected to the outside of the discharge tube body 30 through the plasma spraying means 40 provided under the discharge tube body 30 to process the substrate 1. Therefore, plasma treatment is performed by linearly spraying the plasma induced by the linear plasma generator 10 onto the substrate 1. The structure of the plasma jetting means 40 according to the preferred embodiment of the present invention will be described in detail below.

The discharge tube body 30 may be made of a metallic material such as aluminum. In addition, an electrical insulating material such as a quartz tube may be further provided inside the discharge tube body 30. As such, the discharge vessel body 30 may be rebuilt from any material suitable for the intended plasma process to be performed. In addition, the discharge tube body 30 is provided with a cooling line (not shown) for preventing the temperature of the discharge tube body 30 from rising by the high temperature plasma.

The discharge tube body 30 is provided with a plurality of capacitive coupling electrodes 32 along the longitudinal direction. The radio frequency power generated from the power supply 50 is supplied to the capacitive coupling electrode 32 through the impedance matcher 52 to induce a capacitively coupled plasma inside the reactor body 30. The discharge tube body 30 is provided with a cooling water supply line 36 to prevent the capacitive coupling electrode 32 from overheating.

In the linear plasma generator 10 according to the present invention, plasma is induced by the capacitive coupling electrode 32, and plasma is induced by the antenna coil 34, thereby improving efficiency. The capacitive coupling electrode 32 in the present invention may serve as an ignition electrode for ignition of the process gas.

The antenna coil 34 is driven by receiving the radio frequency power generated from the power supply 60 through the impedance matcher 62. In one embodiment of the present invention, the capacitive coupling electrode 32 and the antenna coil 34 are connected to different power sources, but may be connected to the same power source. In addition, the power sources 50 and 60 may be configured using a radio frequency generator capable of controlling the output power without a separate impedance matcher. In addition, the capacitive coupling electrode 32 and the antenna coil 34 may be connected to a plurality of power sources, respectively. In this case, each power supply may supply the same radio frequency or may supply different radio frequencies.

The linear plasma generator 10 is provided with a gas supply unit 20 above the discharge tube body 30. The gas supply unit 20 includes at least one gas inlet 22 for receiving a process gas from a gas source (not shown) and a plurality of gas outlets 24 for supplying the process gas to the discharge tube body 30. The gas outlet 24 of the gas supply unit 20 is installed in the upper opening of the discharge tube body 30 to supply the process gas into the discharge tube body 30. The baffle 23 is provided in the gas supply unit 20 for uniform distribution of the process gas.

3 is an exploded perspective view for confirming the coupling structure of the plasma injection means of the linear plasma generator.

As shown in FIGS. 1, 2 and 3, the plasma spraying means 40 includes a lower body 42, a spraying pipe 44, and a spraying plate 46. The lower body 42 is provided in the lower portion of the discharge tube body 30 so that the plasma induced in the discharge tube body 30 can pass therethrough.

Inside the lower body 42, the injection pipe 44 is installed in the longitudinal direction. In addition, the lower body 42 has a structure for sucking the residual gas discharged to the substrate 1 again without being discharged inside the discharge tube body 30 because the inside is hollow. At this time, the lower body 42 is provided with an exhaust structure (not shown) for discharging the sucked gas.

The injection pipe 44 has one or more openings 44a and 44b at the top and bottom thereof. The upper opening 44a of the injection tube 44 receives the plasma provided from the discharge tube body 30 into the injection tube 44, and inside the injection tube 44 through the lower opening 44b of the injection tube 44. Spray the plasma to the outside. The openings 44a and 44b at the top and bottom of the injection pipe 44 may vary in size and number. In the embodiment of the present invention, a plurality of upper openings 44a of the injection pipe 44 are provided, and the lower opening 44b has a form in which the lower end of the injection pipe 44 is completely opened along the longitudinal direction. Both ends of the injection pipe 44 are provided with a stopper 41 for preventing the plasma inside. In addition, the cooling water supply line 48 is provided in the longitudinal direction around the injection pipe 44 to prevent the injection pipe 44 from being damaged by the high temperature plasma by adjusting the temperature of the injection pipe 44. Cooling water supply line 48 is connected to a cooling system (not shown).

The injection plate 46 is separately provided in the lower end opening 44b of the injection pipe 44. The injection plate 46 is installed to be detachable to the lower end of the injection pipe 44 in a plate shape. The injection plate 46 has a coupling structure, and coupling protrusions 46c are provided at both sides in the longitudinal direction. The lower end of the injection pipe 44 corresponding to the coupling projection 46c of the injection plate 46 is provided with a coupling groove 44c for fitting the coupling projection 46c. The injection plate 46 has a plurality of injection holes 46a. The plasma inside the discharge tube body 30 is injected to the outside of the discharge tube body 30 through the plurality of injection holes 46a provided in the injection plate 44. The amount of plasma injected from the linear plasma generator 10 may be adjusted according to the number and size of the injection holes 46a.

4 illustrates various shapes of a distribution plate of the linear plasma generator.

As shown in FIG. 4, the injection plate 46 may be replaced and used as needed using the injection plate 46 provided with different sizes or numbers of injection holes 46c. In addition, the shape of the injection hole 46c may be formed in various shapes such as a circle, a rectangle, and the like. In addition, one injection hole 46c-1 may be provided as a whole of the injection plate 46 so that plasma may be injected in a continuous straight line shape.

5 is a cross-sectional view briefly illustrating an antenna coil wound in various ways on a discharge tube body.

As shown in FIG. 5, one or more antenna coils 34a, 34b are wound around the dielectric window 38. In FIG. 5A, one antenna coil 34 is divided into an upper region A and a lower region B of the dielectric window 38 to be wound. Here, the antenna coil 34 receives the radio frequency power supplied through the impedance matcher 62 from one power supply 60. In FIG. 5B, the first antenna coil 34a is wound toward the top of the dielectric window 38 and the second antenna coil 34b is wound toward the bottom of the dielectric window 38. That is, the first and second antenna coils 34a and 34b are wound while crossing each other. Here, the first and second antenna coils 34a and 34b are supplied with radio frequency power supplied through the impedance matcher 62 from one power supply 60a. In FIG. 5C, the first antenna coil 34a is wound toward the top of the dielectric window 38, and the second antenna coil 34b is wound toward the bottom of the dielectric window 38. Here, the first antenna coil 34a receives the radio frequency power supplied from the first power supply 60a through the impedance matcher 62a, and the second antenna coil 34b receives the second power supply 60b. From the radio frequency power supplied via the impedance matcher 62b. In FIG. 5D, the first antenna coil 34a is wound around the dielectric window 38, and the second antenna coil 34b is wound over the first antenna coil 34a. Here, the first antenna coil 34a receives the radio frequency power supplied from the first power supply 60a through the impedance matcher 62a, and the second antenna coil 34b receives the second power supply 60b. From the radio frequency power supplied via the impedance matcher 62b. The first and second antenna coils 34a and 34b may also receive radio frequency power from the same power source.

FIG. 6 is a cross-sectional view illustrating a state in which a means for guiding plasma injected from a linear plasma generator is provided.

As shown in FIG. 6, it may be provided with induction means for guiding the plasma injected from the linear plasma generator 10 to the substrate 1. When the linear plasma generator 10 is installed to process the upper portion of the substrate 1, an electrode 3 is provided at the lower portion of the substrate 1 to receive power from the bias power source 5. Therefore, the plasma injected from the linear plasma generator 10 by the electrode 3 is accelerated toward the substrate 1 so that the substrate 1 can be efficiently processed. In addition, a permanent magnet or an induction magnet may be used as the plasma induction means.

7 is a cross-sectional view illustrating a state in which a ferrite core is installed to surround the antenna coil.

As shown in FIG. 7, the ferrite core 39 has a vertical cross-sectional structure having a horseshoe shape, and is installed so that each magnetic flux entrance and exit is directed toward the dielectric window 38 and covered along the antenna coil 34. The ferrite core 39 may be constructed by assembling a plurality of pieces of horseshoe-shaped ferrite cores, or may use an integrated ferrite core. The magnetic field generated by the antenna coil 34 is generated inside the discharge tube body 30 by the ferrite core 39. The dielectric window 38 is made of an insulating material such as quartz or ceramic to transmit magnetic flux generated from the ferrite core 39 to be transmitted into the discharge tube body 30. Here, although not shown in the figure, the antenna coil 34 has a cooling water supply channel. The cooling water supply channel is provided inside the antenna coil 34 or is supplied between the antenna coil 34 and the ferrite core 39.

8 is a sectional view showing a plasma jet means including a magnet.

As shown in FIG. 8, the plasma spraying means 40 may include a magnet 47 around the spray pipe 44. If an induction magnet or a fixed magnet is installed around the outer circumference of the injection pipe 44, the plasma discharged through the injection pipe 44 may be flowed by the magnetic force and thus more uniformly injected.

9 is a view showing a plasma injection means including a second process gas supply structure.

As shown in FIG. 9, one side of the injection pipe 44 is provided with a second gas supply nozzle 49 for supplying a second process gas. The second gas supply nozzle 49 is connected to a gas supply source (not shown) to receive a process gas separately from the gas supply unit 20. In this case, the process gas supplied to the second gas supply nozzle 49 and the process gas supplied through the gas supply unit 20 may be the same or different.

FIG. 10 is a side view schematically illustrating a structure in which a linear plasma generator is installed to process a substrate to be transported horizontally from the top, and FIG. 12 is a side view schematically illustrating a structure in which a linear plasma generator is installed to process a substrate to be transferred vertically.

As shown in FIG. 10, at least one linear plasma generator 10 is provided on the ceiling of the process chamber 110 to process an upper portion of the substrate 1 that is horizontally transferred. The substrate 1 is horizontally transferred by the roller 122, which is the conveying means 120. The plasma generated inside the linear plasma generator 10 descends toward the substrate 1 to treat the surface of the substrate 1. Here, a heater 130 is provided below the substrate 1 to heat the substrate 1 as necessary.

As shown in FIG. 11, at least one linear plasma generator 10 may be provided at the bottom of the process chamber 110 to process the bottom of the substrate 1 that is horizontally transferred. Here, the linear plasma generator 10 is provided between the plurality of rollers 122. In addition, the substrate 1 is horizontally transferred by the transfer means 120. Although not shown in the drawings, the linear plasma generator 10 may be installed so as to simultaneously process both surfaces (upper and lower surfaces) of the substrate 1.

As shown in FIG. 12, at least one linear plasma generator 10 is provided on the side of the process chamber 110 to process one surface of the substrate 1 vertically transferred. The linear plasma generator 10 is installed to process one surface of the substrate 1 that is vertically transferred. In this case, the roller 7 and the fixing means 9 are provided to vertically transfer the substrate 1. Although not shown in the drawings, at least one linear plasma generator 10 may be installed to simultaneously process both surfaces of the substrate 1.

In the plasma processing system according to the present invention, the process chamber 110 including the at least one plasma generator 10 is disposed in an inline form to process the substrate 1. In this case, each process chamber may perform the same substrate treatment process or may perform a different substrate treatment process.

In other words, according to the type of process gas supplied to the linear plasma generator 10, the process chamber 110 performs operations such as deposition, ashing, or heat treatment. The plurality of linear plasma generators 10 provided in the process chambers 110 may all perform the same plasma treatment process using the same process gas, or may perform different plasma treatment processes using different process gases. have. In addition, a plurality of linear plasma generators 10 are provided in one process chamber 110, and the linear plasma generators 10 for performing the same plasma processing process are separated into independent spaces in the process chamber 110. Here, the linear plasma generator 10 provided in an independent space may perform different plasma processing processes.

For example, one process chamber performs a deposition process along the transfer path of the substrate 1, and the next process chamber performs a heat treatment process. Therefore, the substrate 1 is subjected to various processes sequentially. In addition, when a plurality of linear plasma generators 10 are provided in one process chamber, each linear plasma generator 10 is provided in an independent space. Here, one linear plasma generator 10 performs a deposition process, and the other linear plasma generator 10 performs a heat treatment process. The plasma processing system according to the present invention may be provided in the process chamber by adjusting the number of linear plasma generators 10.

As another example, ammonia (a-si) may be transformed into polysilicon (poly-si) through a heat treatment process. Amorphous silicon (a-si) is difficult to form a deposition on the substrate through the deposition process, so that the poly-si (poly-si) deposited on the substrate 1 is treated by high temperature to be modified. Since the whole substrate 1 is heated, amorphous silicon (a-si) agglomerates or deforms. In addition, since the substrate 1 is made of glass, heating is difficult, and deformation may occur due to high temperature. In order to improve this point, a scanning method using a laser is used, but this has a disadvantage in that the working time is long. When the linear plasma reactor 10 according to the present invention is used in a heat treatment process, since the substrate 1 is linearly heated, compared to the method of heating the substrate as a whole, amol silicon (a-si) is aggregated or deformation is generated. prevent. In addition, the working time can be shortened compared to the method using a laser.

FIG. 13 is a plan view illustrating a state in which a linear plasma generator is arranged such that injection holes through which plasma is injected are alternately positioned.

As shown in FIG. 13, the injection holes 46a of the plurality of linear plasma generators 10-1 and 10-2 may be alternately arranged. For example, first and second linear plasma generators 10-1 and 10-2 are provided in front and rear of the process chamber 110, respectively. The injection hole 46a provided in the second linear plasma generator 10-2 is positioned between the plurality of injection holes 46a provided in the first linear plasma generator 10-1. Therefore, the plasma is uniformly processed while the substrate 1 sequentially passes through the first and second linear plasma generators 10-1 and 10-2.

Embodiments of the linear plasma generator of the present invention and the plasma processing system using the same described above are merely exemplary, and those skilled in the art to which the present invention pertains have various modifications and other equivalent embodiments. You can see that it is possible. Accordingly, it is to be understood that the present invention is not limited to the above-described embodiments. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims. It is also to be understood that the present invention includes all modifications, equivalents, and substitutes within the spirit and scope of the invention as defined by the appended claims.

1: substrate 3: electrode
5: bias power 7: roller
9: fixing means 10: discharge tube body
10-1 and 10-2: first and second linear plasma generators 20: gas supply unit
22: gas inlet 23: baffle
24 gas outlet 30 discharge tube body
32: capacitive coupling electrode 34: antenna coil
34a, 34b: first and second antenna coils p 36 and 48: cooling water supply line
39: ferrite core 38: dielectric window 40: plasma injection means 41: plug
42: lower body 44: injection pipe
44a: upper opening 44b: lower opening
44c: coupling groove 46: jet plate
46a, 46a-1: injection hole 46c: engaging projection
47: magnet 49: second gas supply nozzle
50, 60: power source 60a, 60b: first, second power source
52, 62, 62a, 62b: Impedance Matcher 110: Process Chamber
120: transfer means 122: roller
130: heater

Claims (15)

A hollow discharge tube body having at least one gas inlet configured to receive a process gas;
An antenna coil for inducing plasma discharge inductively coupled to the inside of the discharge tube body;
And a plasma distribution means for discharging the plasma induced in the discharge tube body to the outside of the discharge tube body. The method of claim 1,
The linear plasma generator
And a gas supply unit for supplying a process gas into the discharge tube body. The method of claim 2,
The gas supply unit
A gas inlet receiving a process gas from a gas source;
And a plurality of gas outlets for supplying the process gas supplied from the gas inlet into the discharge tube body, wherein the gas outlet is connected to the gas inlet of the discharge tube body. The method of claim 1,
And a plurality of capacitively coupled electrodes for inducing capacitively coupled plasma discharges in the discharge tube body. The method of claim 1,
And a power supply for supplying radio frequency power to the antenna coil and the capacitive coupling electrode, respectively. The method of claim 1,
The plasma spray means
A lower body installed at a lower end of the discharge tube body;
A distribution tube mounted inside the lower body;
And a distribution plate installed on the lower end of the distribution pipe to be detachable. The method of claim 6,
And the distribution pipe includes at least one opening at an upper portion and a lower portion to allow plasma to pass therethrough, and the distribution plate includes at least one injection hole to allow the plasma to pass therethrough. The method of claim 1,
And a ferrite core cover covering the antenna coil and having a magnetic flux entrance and exit facing the discharge tube body. The method of claim 1,
And the discharge tube body includes a dielectric window so that induced electromotive force by the antenna coil can be transferred into the discharge tube body. The method of claim 6,
The plasma spraying means includes a magnet for uniformizing the plasma by magnetic force. The method of claim 6,
The plasma spraying means further comprises a cooling water supply line. The method of claim 6,
The plasma injection means further comprises a gas supply nozzle for receiving a process gas independently. A linear plasma generator formed by any of the preceding claims;
At least one process chamber in which the linear plasma generator is installed;
And a transfer means provided in the process chamber to transfer the substrate. The method of claim 13,
The transfer means is a plasma processing system having a linear plasma generator, characterized in that for transporting the substrate to any one of the horizontal or vertical. The method of claim 13,
The plasma processing system having a linear plasma generator, characterized in that the plurality of process chambers perform the same substrate processing process or different substrate processing processes.

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