KR101585890B1 - Plasma reactor with vertical dual chamber - Google Patents

Abstract

The present invention relates to a large area plasma reactor composed of vertical dual chambers. A large-area plasma reactor comprising a vertical dual chamber of the present invention includes a first and a second vertical processing chamber having a substrate support to which a substrate to be processed can vertically be installed and having a reaction space in which plasma is generated; A common gas supply disposed between the first and second vertical process chambers to provide a process gas into the first and second vertical process chambers; And a plasma generation unit provided in the common gas supply unit and generating a plasma in the first and second vertical process chambers. According to the plasma reactor of the present invention, the transfer of the enlarged substrate is facilitated, and the expansion of the plasma in a large area is very easy in accordance with the increase of the size of the substrate which is large in size. In addition, a uniform current flow is formed in the antenna by using the high frequency and the low frequency, so that a large-area high-density plasma can be uniformly generated. In addition, since the plasma phenomenon occurs in a plurality of process chambers through a single process gas supply, the working efficiency is increased.

Large area plasma, plasma reactor, complex frequency, high frequency, low frequency, continuous substrate processing

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a plasma reactor having a vertical dual chamber,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a large area plasma reactor having a vertical dual chamber, and more particularly, to a plasma reactor in which a large substrate can be easily processed and a large area can be easily formed.

A plasma is a highly ionized gas containing the same number of positive ions and electrons. Plasma discharges are used in gas excitation to generate active gases including ions, free radicals, atoms, and molecules. The active gas is widely used in various fields and is typically used in a variety of semiconductor manufacturing processes such as etching, deposition, cleaning, and ashing.

Plasma sources for generating plasma are various, and examples thereof include capacitive coupled plasma and inductive coupled plasma using a radio frequency. Capacitively coupled plasma sources have the advantage that they have higher capacity for process control than other plasma sources because of their accurate capacitive coupling and ion control capability. Capacitively coupled plasma sources are commonly used to obtain high density plasma because they can easily increase ion density with increasing radio frequency power. However, an increase in radio frequency power increases the ion impact energy. As a result, radio frequency power is limited in order to prevent damage due to ion bombardment. Inductively coupled plasma sources are typically developed using a RF antenna or a transformer coupled plasma (also referred to as a transformer coupled plasma). Techniques are being developed to improve the characteristics of plasma by adding electromagnets or permanent magnets thereto or adding capacitive coupling electrodes, and to improve reproducibility and controllability. As a radio frequency antenna, a spiral type antenna or a cylinder type antenna is generally used. A radio frequency antenna is disposed outside a plasma reactor and delivers induced electromotive force into a plasma reactor through a dielectric window, such as quartz. Inductively coupled plasma using radio frequency antenna is relatively easy to obtain high density plasma, but plasma uniformity is affected by the structural characteristics of the antenna. Therefore, we are trying to obtain uniform high density plasma by improving the structure of radio frequency antenna.

However, in order to obtain a large-area plasma, it is difficult to increase the structure of the antenna or increase the power supplied to the antenna. For example, it is known that a non-uniform plasma is generated in a radiation image due to a standing wave effect. In addition, when high power is applied to the antenna, the capacitive coupling of the radio frequency antenna increases, so that the dielectric window must be made thick. As a result, the distance between the radio frequency antenna and the plasma increases, Problems arise.

Recently, in the semiconductor manufacturing industry, due to various factors such as miniaturization of semiconductor devices, enlargement of a silicon wafer substrate for manufacturing a semiconductor circuit, enlargement of a glass substrate for manufacturing a liquid crystal display, and appearance of a new object to be processed, . Particularly, there is a demand for an improved plasma source and plasma processing technique having an excellent processing capability for a large-area object to be processed. In addition, the large-sized substrate is not only heavy in weight but also difficult to transfer in the semiconductor manufacturing process due to its large size, so that it is difficult to mount the substrate for plasma processing.

It is an object of the present invention to provide a large area plasma reactor having a vertical dual chamber in which plasma generation and processing can be uniformly formed while having a structure that can be easily expanded in a large area in accordance with an increase in substrate size .

According to an aspect of the present invention, there is provided a large area plasma reactor including a vertical dual chamber.

A large-area plasma reactor comprising a vertical dual chamber of the present invention includes a first and a second vertical processing chamber having a substrate support to which a substrate to be processed can vertically be installed and having a reaction space in which plasma is generated; A common gas supply disposed between the first and second vertical process chambers to provide a process gas into the first and second vertical process chambers; And a plasma generation unit provided in the common gas supply unit and generating a plasma in the first and second vertical process chambers.

In one embodiment, the common gas supply is separated to separately supply process gases to the first and second vertical process chambers, respectively.

In one embodiment, the common gas supply unit includes a gas inlet for injecting the process gas into one side thereof; A plurality of plasma unit mounting grooves for installing the plasma generating unit; And a plurality of gas ejection openings formed between the plurality of plasma unit installation grooves such that the process gas can be supplied into the first and second vertical process chambers,

In one embodiment, the gas injection port is further provided through the upper portion of the plasma unit installation groove so that the process gas is supplied into the process chamber while being in contact with the plasma generation unit.

In one embodiment, the gas supply portion is formed of a conductor and a discharge is generated between the gas supply portion and the plasma generation unit.

In one embodiment, first and second power supplies for providing different frequency powers to the plasma generating unit, respectively; And at least one frequency pass filter connected to the plasma generating unit for distributing the frequency power transmitted through the plasma generating unit.

In one embodiment, the frequency pass filter is a high pass filter for distributing the high frequency power transmitted through the plasma generating unit.

In one embodiment, the frequency pass filter is a low pass filter for distributing the low frequency power delivered through the plasma generation unit.

In one embodiment, the plasma generating unit comprises: an antenna coil receiving frequency power from the first and second power supplies to generate inductively coupled plasma into the process chamber; And a dielectric tube formed to surround the antenna coil.

In one embodiment, the plasma generating unit includes a magnetic core disposed between the antenna coil and the dielectric tube so as to surround the upper side of the antenna coil to enhance the strength of a magnetic field induced into the processing chamber.

In one embodiment, the first power supply provides higher frequency power to the plasma generation unit than the second power supply,

In one embodiment, the first power supply is connected in parallel with the antenna coil.

In one embodiment, the second power supply is connected in series with the antenna coil.

In one embodiment, the high pass filter is connected in parallel with the antenna coil in a plurality.

In one embodiment, the low pass filter is connected in series with the antenna coil.

In one embodiment, the high pass filter is a capacitor.

In one embodiment, the low-pass filter is an inductor.

In one embodiment, the common gas supply includes one gas supply channel or two or more separate gas supply channels.

In one embodiment, the large area plasma reactor includes a distribution circuit that distributes power provided from the first power source device to the plurality of plasma generation units.

In one embodiment, the large area plasma reactor includes an impedance matcher configured to perform impedance matching between the first power source device and the distribution circuit.

In one embodiment, the large area plasma reactor includes an impedance matcher configured to perform impedance matching between the second power source device and the plasma generating unit.

In one embodiment, the distribution circuit includes a current balance circuit that regulates the balance of the current supplied to the plurality of plasma generation units.

In one embodiment, the large area plasma reactor includes a filter for preventing different frequencies from flowing into the first and second power sources among currents supplied to the plasma generating unit.

According to the plasma reactor of the present invention, the transfer of the enlarged substrate is facilitated, and the expansion of the plasma in a large area is very easy in accordance with the increase of the size of the substrate which is large in size. In addition, a uniform current flow is formed in the antenna by using the high frequency and the low frequency, so that a large-area high-density plasma can be uniformly generated. In addition, since the plasma phenomenon occurs in a plurality of process chambers through a single process gas supply, the working efficiency is increased.

For a better understanding of the present invention, a preferred embodiment of the present invention will be described with reference to the accompanying drawings. The embodiments of the present invention may be modified into various forms, and the scope of the present invention should not be construed as being limited to the embodiments described in detail below. The present embodiments are provided to enable those skilled in the art to more fully understand the present invention. Therefore, the shapes and the like of the elements in the drawings can be exaggeratedly expressed to emphasize a clearer description. It should be noted that in the drawings, the same members are denoted by the same reference numerals. Detailed descriptions of well-known functions and constructions which may be unnecessarily obscured by the gist of the present invention are omitted.

1 is a cross-sectional view of a large area plasma reactor having a common gas supply unit according to a preferred embodiment of the present invention.

1, the large area plasma reactor 100 includes a first and second vertical processing chambers 120a and 120b, a common gas supply unit 140, a plasma generating unit 150, and an exhaust system 101 ).

The first and second vertical process chambers 120a and 120b are provided with a substrate support 124 on which the substrate 50 is placed. At this time, the substrate support 124 is provided on the sides of the first and second vertical processing chambers 120a and 120b so that the substrate 50 can be placed perpendicular to the ground. That is, since the large-sized substrate to be processed 50 can be vertically transferred and then mounted directly on the plasma reactor 100, a large-sized substrate or a heavy substrate can be easily and safely transferred and mounted. The substrate support 124 provided in the first and second vertical process chambers 120a and 120b are each connected and biased to a bias power source 182 and each bias power source 182 is coupled to an impedance matcher 184 And is electrically coupled to the substrate support 124 to be biased.

The dual bias structure of the substrate support 124 facilitates plasma generation within the plasma reactor 100 and may further improve plasma ion energy control to improve process productivity. At this time, first and second bias power sources 182a and 182b for supplying different frequency powers are provided. Or a single bias structure. Or the substrate support 124 may be deformed into a structure having a zero potential without the supply of bias power. And the substrate support 124 may include an electrostatic chuck (not shown). Or the substrate support 124 may include a heater (not shown).

The body constituting the first and second vertical processing chambers 120a and 120b may be made of a metal material such as aluminum, stainless steel or copper or a coated metal such as anodized aluminum or nickel plated aluminum. Or a refractory metal. Alternatively, the body may be wholly or partly made of an electrically insulating material such as quartz or ceramic. As such, the body may be made of any material suitable for the intended plasma process to be performed. The structure of the body may have a suitable structure for the substrate 50 and for uniform generation of the plasma.

The substrate to be processed 50 is a substrate such as a wafer substrate, a glass substrate, a plastic substrate, or the like, for manufacturing various devices such as a semiconductor integrated circuit device, a flat panel display device, a solar cell, The plasma reactor 100 is connected to a vacuum pump (not shown). The plasma reactor 100 is subjected to a plasma treatment on the substrate 50 under a low-pressure state below atmospheric pressure. However, the plasma reactor 100 of the present invention can also be realized as a plasma processing system of atmospheric pressure for processing the substrate 50 at atmospheric pressure.

The large area plasma reactor 100 includes first and second power supplies 162 and 164 for applying different frequency powers to the antenna coil 156 of the plasma generating unit 140, respectively.

The first power supply unit 162 includes an impedance matching unit 162b, a high frequency power supply unit 162a, and a filter 162c. The second power supply unit 164 includes an impedance matching unit 164b, a low frequency power supply unit 164a, and a filter 164c.

The impedance matcher 162b is provided between the high frequency power source 162a and the antenna coil 156 and the impedance matcher 164b is provided between the low frequency power source 164b and the antenna coil 156 to perform an impedance matching function do.

A filter 162c is provided between the high frequency power supply unit 162a and the impedance matching unit 162b to prevent the low frequency power transmitted through the antenna coil 156 from being applied to the high frequency power supply unit 162a. A filter 164c is provided between the low frequency power supply unit 164a and the impedance matching unit 164b to prevent the high frequency power transmitted through the antenna coil 156 from being applied to the low frequency power supply unit 164a.

The plasma reactor 100 also includes a frequency pass filter for passing a predetermined frequency band of frequency power provided from the power supply. This frequency pass filter is implemented by a high pass filter 170 for passing high frequency power and a low pass filter 180 for passing low frequency power. The distribution of the frequency power by the frequency pass filter will be described in detail below.

2 is a perspective view showing a common gas supply unit.

As shown in FIG. 2, the common gas supply 140 is located between the first and second vertical process chambers 120a and 120b. The common gas supply unit 140 includes a gas injection port 142, a plasma unit installation groove 146, and a gas injection port 144.

The gas injection port 142 is formed at one side of the common gas supply unit 140 and receives a process gas for generating plasma from the outside.

The plasma unit installation grooves 146 are formed in both sides of the common gas supply unit 140, that is, in the direction in which the first and second vertical process chambers 120a and 120b are coupled, and a plasma generation unit 150 is installed thereon. At this time, the plasma unit mounting groove 146 is formed in the same shape as the outer circumferential surface of the plasma generating unit 150. Since the common gas supply unit 140 is located between the first and second vertical process chambers 120a and 120b, the plasma unit installation grooves 146 are formed on both sides of the common gas supply unit 140, respectively. Since the plasma generating unit 150 is installed inside the process chamber, a dielectric window is unnecessary and the power transmission efficiency is increased.

The gas injection port 144 is formed through the common gas supply unit 140 to supply the process gas provided through the gas injection port 142 to the interior of the first and second vertical process chambers 120a and 120b. At this time, the gas injection holes 144 are provided between the plurality of plasma unit installation grooves 146 so that the process gas can be uniformly supplied into the first and second vertical process chambers 120a and 120b.

That is, the process gas injected through the gas inlet 142 is supplied through the common gas supply unit 140, and plasma is generated by the process gas and the plasma generating unit 150 to be supplied to the first and second vertical process chambers 120a, 120b to react with the substrate 50 to be processed.

3 is a plan view showing a first embodiment of a common gas supply unit according to a preferred embodiment of the present invention.

3, the gas injection port 144 is formed through the common gas supply unit 140 to supply the process gas provided through the gas injection port 142 to the inside of the process chamber 120. [ At this time, the gas injection holes 144 are provided between the plurality of plasma unit installation grooves 146 so that the process gas can be uniformly supplied into the first and second vertical process chambers 120a and 120b. That is, the process gas supplied through the common gas supply unit 140 and the induced electromotive force generated by the plasma generation unit 150 react with the substrate 50 in the process chamber 120.

4 is a plan view showing a second embodiment of a common gas supply unit according to a preferred embodiment of the present invention.

4, the gas injection port 144 is connected to the first and second vertical processing chambers 120a and 120b while the process gas injected to the plasma generating unit 150 installed in the plasma unit installation groove 146 is in contact, (Not shown) of the plasma unit mounting groove 146 so as to be supplied to the plasma unit mounting groove 146. That is, the process gas supplied through the common gas supply unit 140 is uniformly injected into the plasma unit installation grooves 146 and the gas injection holes 144 provided in the plasma unit installation grooves 146, So that an even plasma can be formed within the dielectric layers 120a and 120b.

5 is a cross-sectional view showing the plasma generating unit installed in the common gas supply unit.

As shown in FIG. 5, the plasma generating unit 150 includes an antenna coil 156 and a dielectric tube 152.

The antenna coil 156 receives the frequency power from the power supply and delivers the induced electromotive force for induction-coupled plasma generation into the first and second vertical process chambers 120a and 120b. At this time, since the antenna coil 156 generates heat by the supplied frequency power, cooling water (not shown) for cooling such heat flows in the antenna coil 156.

The dielectric tube 152 is formed in a hollow tube shape, and an antenna coil 156 is installed therein. That is, the dielectric tube 152 is formed to surround the outside of the antenna coil 156. An induced magnetic field induced by the antenna coil 156 is generated between the plurality of dielectric tubes 152. An induced electric field is generated along the plurality of dielectric tubes 152 by the induction magnetic field to form a large-area plasma in the first and second vertical processing chambers 120a and 120b.

In addition, a magnetic core 154 may be installed in each of the plurality of dielectric tubes 152 to enhance the intensity of the magnetic field induced by the antenna coil 156. The magnetic core 154 is installed to surround the antenna coil 156 from above to enhance the intensity of the magnetic field induced into the first and second vertical process chambers 120a and 120b.

The common gas supply unit 140 may include a plurality of gas supply channels to supply different kinds of gas to the first and second vertical process chambers 120a and 120b. In an embodiment of the present invention, the gas supply part 140 is formed in a two-layer structure. And the first gas is supplied to the upper layer so as to be jetted to the gas injection port 144 provided between the plasma unit installation grooves 146. And the second gas is supplied to the lower layer to be jetted to the gas jet opening 144 provided on the plasma unit installation groove 146.

At this time, a mixed gas obtained by mixing two or more process gases may be supplied to the upper and lower layers of the gas supply unit 140, or different process gases may be supplied to the upper and lower layers, respectively.

The common gas supply unit 140 according to the preferred embodiment of the present invention is formed of a conductor and discharges with the plasma generation unit 150 installed in the common gas supply unit 140 to form a magnetic field. That is, the inductively coupled plasma is induced through the plasma generating unit 150, and a discharge is generated between the plasma generating unit 150 and the common gas supplying unit 140 to induce the plasma. Therefore, a uniform and large-sized plasma is formed in the plasma reactor 100.

The large area plasma reactor 100 may be provided with a common gas supply unit separately formed in the first and second vertical process chambers 120a and 120b. That is, the separated common gas supply unit may be formed in the same configuration as the common gas supply unit 140 described above to separately provide the process gases to the first and second vertical process chambers 120a and 120b, respectively.

FIGS. 6 and 7 are cross-sectional views showing that a plurality of antenna coils are included in the plasma generating unit. FIG.

6 and 7, the dielectric tube 152 may be provided with two or three antenna coils 156. However, as shown in FIGS. 6 and 7, Antenna coils 156 may be provided. That is, regardless of the number of the antenna coils 156, the antenna coil 156 may be provided in the dielectric tube 152.

Fig. 8 is a view showing a folding type antenna coil, and Fig. 9 is a view showing a continuous antenna coil.

8 and 9, the antenna coil 156 may be formed in a folded shape or in a double continuous shape. The antenna coil 156 receives the frequency power from the power supplies 162 and 164 and delivers the induced electromotive force for induction-coupled plasma generation into the first and second vertical process chambers 120a and 120b.

It can be seen that the induced magnetic field induced by the antenna coil 156 is generated vertically alternately between the plurality of plasma generating units 150. An induction field is generated along the plurality of plasma generating units 150 by the induction magnetic field to generate plasma of a large area on the inner upper side of the first and second vertical processing chambers 120a and 120b.

FIGS. 10 and 11 are views showing that the antenna coil is divided and applied with frequency power according to the first embodiment.

10 and 11, a first power supply device 162 and a second power supply device 164 are commonly connected to the antenna coil 156 included in the first and second vertical process chambers 120a and 120b .

The first power source unit 162 outputs high-frequency power and the second power source unit 164 outputs low-frequency power. That is, in one power supply apparatus, a higher frequency is outputted than the other power supply apparatus. In an embodiment of the present invention, the first power supply 162 outputs a higher frequency power than the second power supply 164.

The antenna coil 156 is grounded through the high-pass filter 170 and the low-pass filter 180. At this time, the high pass filter 170 is implemented as a capacitor and the low pass filter 180 is implemented as an inductor. These capacitors and inductors adjust the power capacity to distribute the voltage across the power supply and ground.

The first power supply 162 and the high pass filter 170 are connected in parallel to the antenna coil 156.

The high-frequency power output from the first power source unit 162 is distributed in the direction of the antenna coil 156 to which the high-pass filter 170 is connected. That is, the high-pass filter 170 allows the high-frequency power to be distributed for each node of the folded antenna coil 156. Uniformly distributed high-frequency power can uniformly generate an induction magnetic field in the antenna coil 156, thereby forming a uniform and large-area plasma. At this time, when the antenna coil is folded as shown in Fig. 10, the high-pass filter 170 is configured such that the number of high-frequency powers output from the first power source device 162 can be uniformly distributed to each folded antenna coil 156 .

The second power supply 164 and the low pass filter 180 are connected in series to the antenna coil 156.

The second power supply 164 connected to one side of the antenna coil 156 outputs low frequency power and is grounded through the low pass filter 180 connected to the other side of the antenna coil 156.

In the present invention, the high-frequency power and the high-frequency power are uniformly distributed through the plurality of high-pass filters 170 to form the plasma. However, the low-frequency power is uniformly distributed through the plurality of low- So that plasma can be formed.

11, a high-frequency power source 162a for supplying high-frequency power is connected to the middle portion of the folded antenna coil 156, and a high-pass filter 170 is connected to the antenna coil 156 at both ends So that the high-frequency power can be uniformly distributed.

Frequency power is commonly applied to the antenna coil 156 included in the first and second vertical processing chambers 120a and 120b through the common second power source unit 164 and the low frequency power is applied to the antenna coils 156 of the respective process chambers And a low-pass filter 180.

FIG. 12 is a view showing that frequency power is applied to an antenna coil to be distributed in a second embodiment.

12, a first power source device 162 and a second power source device 164 are commonly connected to the antenna coil 156 included in the first and second vertical process chambers 120a and 120b.

The structure in which power is supplied and distributed through the first and second power supply units 162 and 164 is the same as that described above. The antenna coil 156 included in the first vertical processing chamber 120a and the antenna coil 156b included in the second vertical processing chamber 120b are connected to each other. Therefore, the low-frequency power applied to the antenna coil 156 included in the first vertical processing chamber 120a through the common second power supply unit 164 is transmitted to the antenna coil 156 included in the second vertical processing chamber 120b The low pass filter 180 is provided on the antenna coil 156 included in the second vertical processing chamber 120b.

Figs. 13 and 14 are views showing that the antenna coil is divided and applied with frequency power according to the third embodiment. Fig.

As shown in Figs. 13 and 14, the antenna coil 156 included in the first and second vertical process chambers 120a and 120b is connected to the first and second vertical process chambers 120a and 120b, respectively. 2 power supplies 162 and 164, a high pass filter 170 and a low pass filter 180 to perform separate plasma processing processes in the first and second vertical process chambers 120a and 120b, respectively.

The current distribution circuit 200 distributes the power from the power supply unit to various points of the antenna coil 156 of the plasma generation unit 150 and provides them. The current distribution circuit 200 also includes a current balance circuit that adjusts the balance of the current supplied to the plurality of plasma generating units 150. [ Such a current balance circuit is well known and its detailed description is omitted.

15 is a diagram showing a connection state of a high-pass filter and a low-pass filter according to the shape of an antenna coil.

13, a first power source unit 162 and a plurality of high-pass filters 170 are connected in parallel to the rectangular helical antenna coil 300 and a second power source unit 164 and a low-pass filter 180 are connected in series so that the frequency power can uniformly flow along each antenna coil 156 to form a uniform large-area plasma.

That is, it is preferable that the antenna coil 156 can uniformly distribute high-frequency or low-frequency power regardless of the shape of the antenna coil 156.

The embodiments of the large-area plasma reactor having the vertical dual chamber of the present invention described above are merely illustrative, and those skilled in the art will appreciate that various modifications and equivalent embodiments can be made without departing from the scope of the present invention. You can see that it is possible. Accordingly, it is to be understood that the present invention is not limited to the above-described embodiments. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims. It is also to be understood that the invention includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the appended claims.

1 is a cross-sectional view of a large area plasma reactor having a common gas supply unit according to a preferred embodiment of the present invention.

2 is a perspective view showing a common gas supply unit.

3 is a plan view showing a first embodiment of a common gas supply unit according to a preferred embodiment of the present invention.

4 is a plan view showing a second embodiment of a common gas supply unit according to a preferred embodiment of the present invention.

5 is a cross-sectional view showing the plasma generating unit installed in the common gas supply unit.

FIGS. 6 and 7 are cross-sectional views showing that a plurality of antenna coils are included in the plasma generating unit. FIG.

8 is a view showing a folding type antenna coil.

9 is a view showing a continuous antenna coil.

FIGS. 10 and 11 are views showing that the antenna coil is divided and applied with frequency power according to the first embodiment.

FIG. 12 is a view showing that frequency power is applied to an antenna coil to be distributed in a second embodiment.

Figs. 13 and 14 are views showing that the antenna coil is divided and applied with frequency power according to the third embodiment. Fig.

15 is a diagram showing a connection state of a high-pass filter and a low-pass filter according to the shape of an antenna coil.

Description of the Related Art [0002]

50: substrate to be processed 100: plasma reactor

101: exhaust system 120a: first vertical process chamber

120b: second vertical process chamber 124: substrate support

140: common gas supply unit 142: gas inlet

144: Gas jet opening 146: Plasma unit installation groove

150: plasma generating unit 152: dielectric tube

154: magnetic core 156: antenna coil

162: first power supply unit 162a: high frequency power supply unit

162b: impedance matchers 162c, 164c: filter

164: Second power supply unit 164a: Low frequency power supply unit

164b: impedance matcher 170: high pass filter

180: Low pass filter 182: Bias power source

182a, 182b: bias power supply source 184: impedance matcher

200: Current distribution circuit 300: Square spiral antenna coil

Claims (23)

A first vertical processing chamber having a substrate support for vertically mounting a substrate to be processed and having a reaction space in which a plasma is generated; A magnetic core for reinforcing the strength of the magnetic field induced in the process chamber by surrounding the antenna coil between the antenna coil and the dielectric tube to surround the antenna coil and the antenna coil; A plasma generating unit for generating a plasma within the first and second vertical process chambers; A common gas supply unit disposed between the first and second vertical process chambers to supply a process gas into the first and second vertical process chambers and to generate a discharge between the first and second vertical process chambers and the plasma generation unit; First and second power supply devices for respectively providing different frequency powers to the plasma generating unit; And at least one frequency pass filter connected to the plasma generating unit and for distributing frequency power transmitted through the plasma generating unit. The method according to claim 1, The common gas supply unit Wherein the first and second vertical process chambers are separated to supply process gases separately to the first and second vertical process chambers. 3. The method according to any one of claims 1 to 3, The common gas supply unit A gas inlet for injecting the process gas into one side; A plurality of plasma unit mounting grooves for installing the plasma generating unit; And And a plurality of gas ejection openings formed between the plurality of plasma unit installation grooves and penetrating the process gas to be supplied into the first and second vertical process chambers. The method of claim 3, And the gas injection port is further provided through the upper portion of the plasma unit installation groove so that the process gas is supplied to the inside of the process chamber while being in contact with the plasma generation unit. delete delete The method according to claim 1, Wherein the frequency pass filter is a high pass filter for distributing high frequency power transmitted through the plasma generating unit. The method according to claim 1, Wherein the frequency pass filter is a low pass filter for distributing low frequency power transmitted through the plasma generating unit. delete delete The method according to claim 1, Wherein the first power source device provides a higher frequency power to the plasma generation unit than the second power source device. 12. The method of claim 11, Wherein the first power supply unit is connected in parallel with the antenna coil. 12. The method of claim 11, And the second power supply unit is connected in series with the antenna coil. 8. The method of claim 7, Wherein the high pass filter is connected in parallel to the antenna coil in a plurality of high pass filters. 9. The method of claim 8, And the low pass filter is connected in series with the antenna coil. 15. The method of claim 14, Wherein the high-pass filter is a capacitor. 16. The method of claim 15, Wherein the low pass filter is an inductor. The method according to claim 1, Wherein the common gas supply unit comprises one gas supply channel or two or more separate gas supply channels. The method according to claim 1, Wherein the large area plasma reactor comprises a distribution circuit for distributing power supplied from the first power supply unit to the plasma generation unit. The method according to claim 1, Wherein the large area plasma reactor comprises an impedance matcher configured to perform impedance matching between the first power source device and the distribution circuit. The method according to claim 1, Wherein the large area plasma reactor includes an impedance matching unit configured to perform impedance matching between the second power supply unit and the plasma generating unit. 20. The method of claim 19, Wherein the distribution circuit comprises a current balancing circuit for regulating the balance of the current supplied to the plasma generating unit. The method according to claim 1, Wherein the large area plasma reactor includes a filter for preventing different frequencies from flowing into the first and second power sources among the currents supplied to the plasma generating unit. .

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