KR101626039B1 - Consecutive substrate processing system using large-area plasma - Google Patents

Abstract

The present invention relates to a continuous substrate processing system using a large area plasma. A continuous substrate processing system using a large area plasma of the present invention includes a plurality of process chambers continuously arranged to perform a substrate processing process on a substrate to be processed; A plurality of plasma generation units for inducing a plasma discharge in the plurality of process chambers; And a dual power supply system for supplying different frequency powers to the plasma generating unit. According to the plasma reactor of the present invention, a uniform current flow is formed in the antenna by using a high frequency and a low frequency, so that a high-density plasma with a large area can be uniformly generated. In addition, it is very easy to expand to a large area in accordance with an increase in size of a substrate which is large in size. It also improves power transfer efficiency by eliminating dielectric windows.

Large area plasma, plasma reactor, complex frequency, high frequency, low frequency, continuous substrate processing

Description

[0001] The present invention relates to a continuous substrate processing system using a large-area plasma,

The present invention relates to a continuous substrate processing system using a large area plasma, and more particularly, to a continuous substrate processing system using a large area plasma, in which plasma is uniformly formed and a substrate can be continuously processed, .

A plasma is a highly ionized gas containing the same number of positive ions and electrons. Plasma discharges are used in gas excitation to generate active gases including ions, free radicals, atoms, and molecules. The active gas is widely used in various fields and is typically used in a variety of semiconductor manufacturing processes such as etching, deposition, cleaning, and ashing.

Plasma sources for generating plasma are various, and examples thereof include capacitive coupled plasma and inductive coupled plasma using a radio frequency. Capacitively coupled plasma sources have the advantage that they have higher capacity for process control than other plasma sources because of their accurate capacitive coupling and ion control capability. Capacitively coupled plasma sources are commonly used to obtain high density plasma because they can easily increase ion density with increasing radio frequency power. However, an increase in radio frequency power increases the ion impact energy. As a result, radio frequency power is limited in order to prevent damage due to ion bombardment. Inductively coupled plasma sources are typically developed using a RF antenna or a transformer coupled plasma (also referred to as a transformer coupled plasma). Techniques are being developed to improve the characteristics of plasma by adding electromagnets or permanent magnets thereto or adding capacitive coupling electrodes, and to improve reproducibility and controllability. As a radio frequency antenna, a spiral type antenna or a cylinder type antenna is generally used. A radio frequency antenna is disposed outside a plasma reactor and delivers induced electromotive force into a plasma reactor through a dielectric window, such as quartz. Inductively coupled plasma using radio frequency antenna is relatively easy to obtain high density plasma, but plasma uniformity is affected by the structural characteristics of the antenna. Therefore, we are trying to obtain uniform high density plasma by improving the structure of radio frequency antenna.

However, in order to obtain a large-area plasma, it is difficult to increase the structure of the antenna or increase the power supplied to the antenna. For example, it is known that a non-uniform plasma is generated in a radiation phase by a standing wave effect. In addition, when high power is applied to the antenna, the capacitive coupling of the radio frequency antenna increases, so that the dielectric window must be made thick. As a result, the distance between the radio frequency antenna and the plasma increases, Problems arise.

Recently, in the semiconductor manufacturing industry, due to various factors such as miniaturization of semiconductor devices, enlargement of a silicon wafer substrate for manufacturing a semiconductor circuit, enlargement of a glass substrate for manufacturing a liquid crystal display, and appearance of a new object to be processed, . Particularly, there is a demand for an improved plasma source and plasma processing technique having an excellent processing capability for a large-area object to be processed.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a plasma processing apparatus and a plasma processing method for plasma processing a continuous substrate using a large area plasma capable of processing a substrate uniformly with plasma generation and processing, Processing system.

According to an aspect of the present invention, there is provided a continuous substrate processing system using a large area plasma.

A continuous substrate processing system using a large area plasma of the present invention includes a plurality of process chambers continuously arranged to perform a substrate processing process on a substrate to be processed; A plurality of plasma generation units for inducing a plasma discharge in the plurality of process chambers; And a dual power supply system for supplying different frequency powers to the plasma generating unit.

In one embodiment, the plasma generating unit includes: an antenna coil for transmitting an induced electromotive force capable of generating an inductively coupled plasma into the process chamber; And a dielectric tube formed to surround the antenna coil.

In one embodiment, the plasma generating unit includes a magnetic core disposed between the antenna coil and the dielectric tube so as to surround the upper side of the antenna coil to enhance the strength of a magnetic field induced into the process chamber.

In one embodiment, the dual power supply system includes first and second power supplies for providing different frequency powers to the antenna coil, respectively; And at least one frequency pass filter connected to the antenna coil for distributing the frequency power transmitted through the plasma generating unit.

In one embodiment, the frequency pass filter is a high pass filter for distributing the high frequency power transmitted through the plasma generating unit.

In one embodiment, the frequency pass filter is a low pass filter for distributing the low frequency power delivered through the plasma generation unit.

In one embodiment, the first power supply provides a higher frequency power to the plasma generation unit than the second power supply.

In one embodiment, the first power supply is connected in parallel with the antenna coil.

In one embodiment, the second power supply is connected in series with the antenna coil.

In one embodiment, the high pass filter is connected in parallel with the antenna coil.

In one embodiment, the low pass filter is connected in series with the antenna coil.

In one embodiment, the high pass filter is a capacitor.

In one embodiment, the low-pass filter is an inductor.

In one embodiment, the continuous substrate processing system includes a load chamber and a connected unload chamber connected to the successively arranged leading and trailing ends of the plurality of process chambers, respectively.

In one embodiment, the plurality of process chambers perform at least two substrate processing processes on the same substrate to be processed.

In one embodiment, the plurality of process chambers includes an arrangement in which one substrate to be processed repeatedly performs at least two process chambers repeatedly so as to perform at least two substrate processing processes on the same substrate to be processed in the circulation interval .

In one embodiment, the plasma generating unit includes a magnetic core between the antenna coil and the dielectric tube to surround the upper side of the antenna coil and to enhance the strength of a magnetic field induced into the process chamber.

In one embodiment, the continuous substrate processing system further comprises a gas supply unit installed above the process chamber for supplying process gas into the process chamber.

In one embodiment, the gas supply unit includes a gas inlet for injecting the process gas into the upper portion; A plurality of plasma unit mounting grooves for installing the plasma generating unit in a lower portion of the gas inlet; And a plurality of gas ejection openings formed between the plurality of plasma unit installation grooves so as to allow the process gas to be supplied into the process chamber.

In one embodiment, the gas injection port is further provided through the upper portion of the plasma unit installation groove so that the process gas is supplied into the process chamber while being in contact with the plasma generation unit.

In one embodiment, the gas supply portion is formed of a conductor and a discharge is generated between the gas supply portion and the plasma generation unit.

In one embodiment, the gas supply comprises one gas supply channel or two or more separate gas supply channels.

In one embodiment, the continuous substrate processing system includes a distribution circuit that distributes power provided from the first power source device to the plurality of plasma generation units.

In one embodiment, the impedance matching device is configured between the first power supply device and the distribution circuit to perform impedance matching.

In one embodiment, an impedance matcher is provided between the second power source device and the plasma generating unit to perform impedance matching.

In one embodiment, the distribution circuit includes a current balance circuit that regulates the balance of the current supplied to the plurality of plasma generation units.

In one embodiment, the continuous substrate processing system includes a filter for preventing the introduction of different frequencies into the first and second power supply units among the currents supplied to the plasma generating unit.

According to the plasma reactor of the present invention, a uniform current flow is formed in the antenna by using a high frequency and a low frequency, so that a high-density plasma with a large area can be uniformly generated. In addition, it is very easy to expand to a large area in accordance with an increase in size of a substrate which is large in size. It also improves power transfer efficiency by eliminating dielectric windows.

For a better understanding of the present invention, a preferred embodiment of the present invention will be described with reference to the accompanying drawings. The embodiments of the present invention may be modified into various forms, and the scope of the present invention should not be construed as being limited to the embodiments described in detail below. The present embodiments are provided to enable those skilled in the art to more fully understand the present invention. Therefore, the shapes and the like of the elements in the drawings can be exaggeratedly expressed to emphasize a clearer description. It should be noted that in the drawings, the same members are denoted by the same reference numerals. Detailed descriptions of well-known functions and constructions which may be unnecessarily obscured by the gist of the present invention are omitted.

1 is a view showing a continuous substrate processing system according to a preferred embodiment of the present invention.

1, the continuous substrate processing system 1 includes a plurality of continuously arranged process chambers 100, a gas supply system 3 for supplying process gas, and an exhaust system 7 for gas exhaust, Respectively. The apparatus further includes transfer means (9) for transferring the substrate (50) while serving as a substrate support for supporting the substrate (50). The transfer means 9 is connected and biased to a bias power source 182 and a bias power source 182 is biased electrically coupled to the transfer means 9 via an impedance matcher 184. [

The double bias structure of the transfer means 9 facilitates the generation of plasma inside the plasma reactor 100 and further improves the control of the plasma ion energy to improve the process productivity. At this time, first and second bias power sources 182a and 182b for supplying different frequency powers are provided. Or a single bias structure. Or the substrate support 124 may be deformed into a structure having a zero potential without the supply of bias power. The conveying means 9 may include an electrostatic chuck (not shown). Or the conveying means 9 may include a heater (not shown).

The plurality of process chambers 100 includes a plurality of plasma generating units 150 for inducing a plasma discharge and a gas supply unit 140 for supplying a process gas into the process chamber 100. A dual power supply system 5 for supplying power to a plasma generation unit 150 provided in a plurality of process chambers 100 is provided.

The gas supply system 3 supplies the required process gas from the gas supply source 4 to the gas supply unit 140 of the plurality of process chambers 100. The gas supply system 3 includes a plurality of gas supply valves 3a for supplying the required process gas and selects an appropriate gas from the gas supply source in accordance with the recipe of the substrate processing process performed in each process chamber 100 To the gas supply unit 140 of the corresponding process chamber 100.

The exhaust system 7 controls the vacuum control of the plurality of process chambers 100 and the exhaust of the process gas. The exhaust system 7 has a plurality of exhaust valves 7a for exhausting the respective process chambers 100. [ The plurality of process chambers each have independent vacuum pumps and have an independent exhaust structure. But may include at least two process chambers having a common exhaust structure. In the case of having a common exhaust structure, the number of vacuum pumps can be reduced, so that the equipment cost can be reduced.

The plurality of process chambers 120 are continuously arranged to perform a continuous substrate processing process. The plurality of process chambers 120 may include a deposition chamber, such as, for example, a chemical vapor deposition chamber, a physical vapor deposition chamber, for various substrate processing. Or an etching chamber or an electroplating chamber. Or a cooling chamber and a preheating chamber. As such, the plurality of process chambers 120 may be equipped with various types of process chambers for processing substrates of the substrate to be processed. The plurality of process chambers may include a preheating chamber for preheating the substrate 50 or a heating chamber for heating the substrate. Or a cleaning chamber for cleaning the substrate to be processed. Thus, all of the plurality of process chambers 120 may be the process chambers 120 having the plasma generating units 150, but some process chambers 120 may not be provided.

The body constituting the plurality of process chambers 120 may be made of a metal material such as aluminum, stainless steel, copper or a coated metal such as anodized aluminum or nickel plated aluminum. Or a refractory metal. Alternatively, the body may be wholly or partly made of an electrically insulating material such as quartz or ceramic. As such, the body may be made of any material suitable for the intended plasma process to be performed. The structure of the body may have a suitable structure for the substrate to be processed and for the uniform generation of the plasma.

The substrate to be processed is, for example, a substrate such as a wafer substrate, a glass substrate, a plastic substrate, or the like for manufacturing various devices such as a semiconductor integrated circuit device, a flat panel display device, a solar cell, The plasma reactor is connected to a vacuum pump (not shown). The plasma reactor is subjected to a plasma treatment on the substrate to be processed at a low pressure state below atmospheric pressure. However, the plasma reactor of the present invention can also be implemented as a plasma processing system of atmospheric pressure for processing a substrate to be processed at atmospheric pressure.

The load chamber 122 is connected to the continuously arranged end of the plurality of process chambers 120, and the unload chamber 124 is connected to the rear end. The load chamber 122 and the unload chamber 124 are also connected to a vacuum pump (not shown) controlled by the exhaust system 7. The substrate to be processed 50 loaded in the load chamber 122 is subjected to substrate processing through a plurality of process chambers 120. The processed substrate 50 to be processed is unloaded to the undersurface chamber 124. It may be preferable that a plurality of process chambers and respective connecting portions of the load chamber 122 and the unload chamber 124 are provided with appropriate opening and closing means (not shown) in order to avoid mutual process interference.

In the dual power supply system 5, different frequency powers are provided to the plasma generation units 150 provided in the plurality of process chambers 120. In the present invention, a plurality of process chambers 120 are controlled through a single dual power supply system 5, but a dual power supply system 5 may be provided for each process chamber 120, Process may be performed. This dual power supply system 5 is described in detail below.

The gas supply part 140 includes a gas injection port 142, a plasma unit installation groove 146 and a gas injection port 144. The gas inlet 142 is provided at an upper portion of the gas supply unit 140 and receives a process gas for generating plasma from the outside. The plasma unit installation groove 146 is formed at a lower portion of the gas supply unit 140, and a plasma generation unit 150 is installed. At this time, the plasma unit mounting groove 146 is formed in the same shape as the outer circumferential surface of the plasma generating unit 150.

Figs. 2 and 3 are views showing a gas supply unit included in the continuous substrate processing system.

2 and 3, a plurality of process chambers are respectively provided with a gas supply unit 140 for supplying a process gas from the gas supply system 3 and for supplying a process gas into the process chamber 120 do.

The gas supply part 140 is formed in a plate shape and includes a gas injection port 142, a plasma unit installation groove 146, and a gas injection port 144. The gas injection port 142 is provided at an upper portion of the gas supply unit 140 to supply a process gas for generating plasma from the outside. The plasma unit installation groove 146 is formed at a lower portion of the gas supply unit 140, and a plasma generation unit 150 is installed. At this time, the plasma unit mounting groove 146 is formed in the same shape as the outer circumferential surface of the plasma generating unit 150.

The gas injection port 144 is formed through the gas supply part 140 to supply the process gas provided through the gas injection port 142 to the inside of the process chamber 120. At this time, the gas injection ports 144 are provided between the plurality of plasma unit installation grooves 146, respectively, so that the process gas can be uniformly supplied into the process chamber 120. That is, a plasma is generated by the process gas supplied through the gas supply unit 140 and the plasma generation unit 150, and reacts with the substrate to be processed in the process chamber 120.

4 is a view showing a first embodiment of a gas supply unit included in the continuous substrate processing system.

4, the gas injection port 144 is formed through the gas supply part 140 to supply the process gas provided through the gas injection port 142 to the inside of the process chamber 120. [ At this time, the gas injection ports 144 are provided between the plurality of plasma unit installation grooves 146, respectively, so that the process gas can be uniformly supplied into the process chamber 120. That is, a plasma is generated by the process gas supplied through the gas supply unit 140 and the plasma generation unit 150, and reacts with the substrate 50 in the process chamber 120.

5 is a view showing a second embodiment of the gas supply part included in the continuous substrate processing system.

5, the gas injection port 144 is connected to the plasma generating unit 150 through the plasma unit mounting groove 146 so that the process gas injected to the plasma generating unit 150 can be supplied to the process chamber 120 while being contacted with the process gas. And is formed through the upper portion of the installation groove 146. That is, the process gas supplied through the gas supply unit 140 is uniformly injected into the plasma unit installation grooves 146 and the gas injection holes 144 provided in the plasma unit installation grooves 146, So that a plasma can be formed.

Referring again to Figures 2 and 3, the plasma generating unit 150 includes an antenna coil 156 and a dielectric tube 152.

The antenna coil 158 receives the frequency power from the dual power supply system 5 and delivers induced electromotive force for induction-coupled plasma generation into the process chamber 120. At this time, since the antenna coil 156 generates heat by the supplied frequency power, cooling water (not shown) for cooling such heat flows in the antenna coil 156.

The dielectric tube 152 is formed in a hollow tube shape, and an antenna coil 156 is installed therein. That is, the dielectric tube 152 is formed to surround the outside of the antenna coil 156. An induced magnetic field induced by the antenna coil 156 is generated between the plurality of dielectric tubes 152. An induction field is generated along the plurality of dielectric tubes 152 by the induction magnetic field, and a plasma of a large area is generated on the inner upper side of the process chamber 120.

In addition, a magnetic core 154 may be installed in each of the plurality of dielectric tubes 152 to enhance the intensity of the magnetic field induced by the antenna coil 156. The magnetic core 154 is installed to surround the antenna coil 156 from above to enhance the strength of the magnetic field induced into the process chamber 120.

6 is a cross-sectional view showing a gas supply unit having two gas supply channels.

As shown in FIG. 6, the gas supply unit 140 may include a plurality of gas supply channels to supply different kinds of gas. In an embodiment of the present invention, the gas supply part 140 is formed in a two-layer structure. And the first gas is supplied to the upper layer so as to be jetted to the gas injection port 144 provided between the plasma unit installation grooves 146. And a second gas is supplied to the lower layer so as to be injected into the gas injection port 144 provided on the plasma unit installation groove 146.

At this time, a mixed gas obtained by mixing two or more process gases may be supplied to the upper and lower layers of the gas supply unit 140, or different process gases may be supplied to the upper and lower layers, respectively.

7 is a cross-sectional view showing a phenomenon in which a discharge occurs between the gas supply unit and the plasma generating unit.

7, a gas supply unit 140 according to a preferred embodiment of the present invention is formed of a conductor, and a discharge is generated between the plasma generation unit 150 installed in the gas supply unit 140 and a magnetic field is formed do. That is, an inductively coupled plasma is induced through the plasma generating unit 150, and a discharge is generated between the plasma generating unit 150 and the gas supplying part 140 to induce the plasma. Therefore, a uniform and large-sized plasma is formed in the plasma reactor 100.

8 and 9 are cross-sectional views showing that a plurality of antenna coils are included in the plasma generating unit.

In the embodiment of the present invention, one antenna coil 156 is provided inside the dielectric tube 152. However, as shown in FIGS. 8 and 9, two or three Antenna coils 156 may be provided. That is, the antenna coil 156 may be provided inside the dielectric tube 152 irrespective of the number of the antenna coils 156.

Fig. 10 is a view showing a folding type antenna coil, and Fig. 11 is a view showing a continuous antenna coil.

As shown in FIGS. 10 and 11, the antenna coil 156 may be formed in a folded shape or a double continuous shape. The antenna coil 156 receives the frequency power from the power supply units 162 and 164 and delivers the induced electromotive force for induction-coupled plasma generation into the process chamber 120.

It can be seen that the induced magnetic field induced by the antenna coil 156 is generated vertically alternately between the plurality of plasma generating units 150. An induced electric field is generated along the plurality of plasma generating units 150 by the induction magnetic field, and a plasma of a large area is generated in the upper part of the inside of the process chamber 120.

12 and 13 are diagrams showing that frequency power is applied to the antenna coil to be distributed.

As shown in Fig. 12, the antenna coil 156 formed in a folded shape is connected to the dual power supply system 5. [ The dual power supply system 5 includes first and second power supplies 162 and 164 and a frequency pass filter. The first power supply unit 162 includes an impedance matching unit 162b, a high frequency power supply unit 162a, and a filter 162c. The second power supply unit 164 includes an impedance matching unit 164b, a low frequency power supply unit 164a, and a filter 164c.

The impedance matcher 162b is provided between the high frequency power source 162a and the antenna coil 156 and the impedance matcher 164b is provided between the low frequency power source 164b and the antenna coil 156 to perform the impedance matching function do.

A filter 162c is provided between the high frequency power source 162a and the impedance matcher 162b to prevent the low frequency power transmitted through the antenna coil 156 from being applied to the high frequency power source 162a. A filter 164c is provided between the low frequency power supply unit 164a and the impedance matching unit 164b to prevent the high frequency power transmitted through the antenna coil 156 from being applied to the low frequency power supply unit 164a.

The plasma reactor 100 also includes a frequency pass filter for passing a predetermined frequency band of frequency power provided from the power supply. The frequency pass filter includes a high pass filter 170 for passing high frequency power and a low pass filter 180 for passing low frequency power.

The first power source unit 162 outputs high-frequency power and the second power source unit 164 outputs low-frequency power. That is, in one power supply apparatus, a higher frequency is outputted than the other power supply apparatus. In an embodiment of the present invention, the first power supply 162 outputs a higher frequency power than the second power supply 164.

The antenna coil 156 is grounded through the high-pass filter 170 and the low-pass filter 180. At this time, the high pass filter 170 is implemented as a capacitor and the low pass filter 180 is implemented as an inductor. These capacitors and inductors adjust the power capacity to distribute the voltage across the power supply and ground.

The first power supply 162 and the high pass filter 170 are connected in parallel to the antenna coil 156.

The high-frequency power output from the first power source unit 162 is distributed in the direction of the antenna coil 156 to which the high-pass filter 170 is connected. That is, the high-pass filter 170 allows the high frequency power to be distributed by nodes of the folded antenna coil 156. Uniformly distributed high-frequency power can uniformly generate an induction magnetic field in the antenna coil 156, thereby forming a uniform and large-area plasma. At this time, when the antenna coil is folded as shown in FIG. 7, the high-pass filter 170 is configured such that the number of high-frequency powers output from the first power source device 162 can be uniformly distributed to each folded antenna coil 156 .

The second power supply 164 and the low pass filter 180 are connected in series to the antenna coil 156.

The second power supply 164 connected to one side of the antenna coil 156 outputs low frequency power and is grounded through the low pass filter 180 connected to the other side of the antenna coil 156.

In the present invention, the high-frequency power and the high-frequency power are uniformly distributed through the plurality of high-pass filters 170 to form the plasma. However, the low-frequency power is uniformly distributed through the plurality of low- So that plasma can be formed.

13, a high-frequency power supply 162a for supplying high-frequency power is connected to the middle portion of the folded antenna coil 156, and a high-pass filter 170 is connected to the antenna coil 156 at both ends So that the high-frequency power can be uniformly distributed.

The current distribution circuit 200 distributes the power from the power supply unit to various points of the antenna coil 156 of the plasma generation unit 150 and provides them. The current distribution circuit 200 also includes a current balancing circuit that adjusts the balance of the current supplied to the plurality of plasma generating units 150. [ Such a current balance circuit is well known and its detailed description is omitted.

14 is a diagram showing a connection state of a high pass filter and a low pass filter according to the shape of an antenna coil.

14, a first power source device 162 and a plurality of high-pass filters 170 are connected in parallel to the square spiral antenna coil 300 and a second power source device 164 and a low-pass filter 180 are connected in series so that the frequency power can uniformly flow along each antenna coil 156 to form a uniform large-area plasma.

That is, it is preferable that the antenna coil 156 can uniformly distribute high-frequency or low-frequency power regardless of the shape of the antenna coil 156.

The embodiments of the continuous substrate processing system of the present invention described above are merely illustrative and those skilled in the art will appreciate that various modifications and equivalent embodiments are possible without departing from the scope of the present invention. You will know. Accordingly, it is to be understood that the present invention is not limited to the above-described embodiments. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims. It is also to be understood that the invention includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the appended claims.

1 is a view showing a continuous substrate processing system according to a preferred embodiment of the present invention.

Figs. 2 and 3 are views showing a gas supply unit included in the continuous substrate processing system.

4 is a view showing a first embodiment of a gas supply unit included in the continuous substrate processing system.

5 is a view showing a second embodiment of the gas supply part included in the continuous substrate processing system.

6 is a cross-sectional view showing a gas supply unit having two gas supply channels.

7 is a cross-sectional view showing a phenomenon in which a discharge occurs between the gas supply unit and the plasma generating unit.

8 and 9 are cross-sectional views showing that a plurality of antenna coils are included in the plasma generating unit.

10 is a view showing a folding type antenna coil.

11 is a view showing a continuous antenna coil.

12 and 13 are diagrams showing that frequency power is applied to the antenna coil to be distributed.

14 is a diagram showing a connection state of a high pass filter and a low pass filter according to the shape of an antenna coil.

Description of the Related Art [0002]

1: Continuous substrate processing system 3: Gas supply system

3a: gas supply valve 4: gas supply source

5: Dual power supply system 7: Exhaust system

7a: exhaust valve 9: conveying means

50: substrate to be processed 100: plasma reactor

120: process chamber 122: load chamber

124: unload chamber 140: gas supply part

142: gas inlet 144: gas outlet

146: Plasma unit mounting groove 150: Plasma generating unit

152: dielectric tube 154: magnetic core

156: Antenna coil 162: First power source device 162a: High frequency power source part 162b: Impedance matching device

162c, 164c: filter 164: second power supply unit

164a: Low-frequency power supply unit 164b: Impedance matching unit

170: High pass filter 180: Low pass filter

182: Bias power supply source 184: Impedance matcher

200: Current distribution circuit 300: Square spiral antenna coil

Claims (27)

A plurality of process chambers successively arranged to perform different process steps successive to the substrate to be processed; A load chamber connected to said plurality of continuously arranged process chamber tips; An unload chamber connected to a rear end of the plurality of continuously arranged process chambers; Wherein a plurality of plasma unit installation grooves are provided at a lower end of the plurality of process chambers, and a plurality of gas ejection openings are formed between the plurality of plasma unit installation grooves and the plurality of plasma unit installation grooves, A plurality of gas supply units formed to penetrate and supplied to the process chamber; A plurality of plasma generation units installed in the plasma unit installation grooves formed in the plurality of gas supply units to induce a plasma discharge in the plurality of process chambers; An antenna coil included in the plasma generating unit and transmitting an induced electromotive force capable of generating inductively coupled plasma into the process chamber; A dielectric tube formed to surround the antenna coil; A magnetic core disposed between the antenna coil and the dielectric tube so as to surround the antenna coil to enhance the strength of a magnetic field introduced into the process chamber; A dual power supply system for supplying different frequency powers to the plasma generation unit; First and second power supply units provided in the dual power supply system for providing different frequency powers to the antenna coil, respectively; A high pass filter provided in the dual power supply system and connected to the antenna coil, for distributing high frequency power transmitted through the plasma generation unit; A low-pass filter provided in the dual power supply system and connected to the antenna coil, for distributing low-frequency power transmitted through the plasma generation unit; And And a filter provided in the dual power supply system to prevent different frequencies from flowing into the first and second power supply units among currents supplied to the plasma generation unit. Processing system. delete delete delete delete delete delete delete delete delete delete The method according to claim 1, Wherein the high-pass filter is a capacitor. The method according to claim 1, Wherein the low pass filter is an inductor. delete delete delete delete delete delete delete delete The method according to claim 1, Wherein the gas supply part comprises one gas supply channel or two or more separate gas supply channels. The method according to claim 1, Wherein the continuous substrate processing system includes a distribution circuit that distributes power supplied from the first power source device to the plurality of plasma generation units. delete delete 24. The method of claim 23, Wherein the distribution circuit includes a current balancing circuit for adjusting a balance of current supplied to the plurality of plasma generating units. delete

Images