KR20100129370A - Consecutive substrate processing system using large-area plasma - Google Patents

Abstract

PURPOSE: A continuous substrate processing system using large scale plasma is provided to improve the uniformity of high frequency power distribution by connecting a first power unit in parallel with a high pass filter and connecting a second power unit in serial with a low pass filter. CONSTITUTION: A processing chamber(100) includes a plasma generating unit and a gas supplying unit(140). The plasma generating unit induces plasma discharge to the processing chamber. A dual power system(5) supplies power to the plasma generating unit. A gas supplying system(3) supplies a processing gas to the gas supplying unit. An exhausting system(7) controls the vacuum condition of the processing chamber and the exhaust condition of the processing gas.

Description

Continuous substrate processing system using large area plasma {Consecutive substrate processing system using large-area plasma}

The present invention relates to a continuous substrate processing system using a large-area plasma. Specifically, a continuous substrate processing system using a large-area plasma capable of continuously processing a substrate by uniformly forming a plasma with a very easy structure. It is about.

Plasma is a highly ionized gas containing the same number of positive ions and electrons. Plasma discharges are used for gas excitation to generate active gases containing ions, free radicals, atoms, molecules. The active gas is widely used in various fields and is typically used in a variety of semiconductor manufacturing processes such as etching, deposition, cleaning, ashing, and the like.

There are a number of plasma sources for generating plasma, and the representative examples are capacitive coupled plasma and inductive coupled plasma using radio frequency. Capacitively coupled plasma sources have the advantage of high process productivity compared to other plasma sources due to their high capacity for precise capacitive coupling and ion control. Capacitively coupled plasma sources can easily increase ion density with increasing radio frequency power supply and are therefore commonly used to obtain high density plasma. However, increasing radio frequency power increases ion bombardment energy. As a result, in order to prevent damage due to ion bombardment, radio frequency power is limited. Inductively coupled plasma sources are typically developed using a radio frequency antenna (RF antenna) and a transformer (also called transformer coupled plasma). The development of technology to improve the characteristics of plasma, and to increase the reproducibility and control ability by adding an electromagnet or a permanent magnet or adding a capacitive coupling electrode. As the radio frequency antenna, a spiral type antenna or a cylinder type antenna is generally used. The radio frequency antenna is disposed outside the plasma reactor and transmits induced electromotive force into the plasma reactor through a dielectric window such as quartz. Inductively coupled plasma using a radio frequency antenna can obtain a high density plasma relatively easily, but the plasma uniformity is affected by the structural characteristics of the antenna. Therefore, efforts have been made to improve the structure of the radio frequency antenna to obtain a uniform high density plasma.

However, in order to obtain a large plasma, it is limited to widen the structure of the antenna or increase the power supplied to the antenna. For example, it is known that a non-uniform plasma is generated in the radiological phase by a standing wave effect. In addition, when high power is applied to the antenna, the capacitive coupling of the radio frequency antenna increases, so that the dielectric window must be thickened, thereby increasing the distance between the radio frequency antenna and the plasma, thereby lowering power transmission efficiency. Losing problems occur.

In the recent semiconductor manufacturing industry, plasma processing technology has been further improved due to various factors such as ultra-miniaturization of semiconductor devices, the enlargement of silicon wafer substrates for manufacturing semiconductor circuits, the enlargement of glass substrates for manufacturing liquid crystal displays, and the emergence of new target materials. This is required. In particular, there is a need for improved plasma sources and plasma processing techniques that have good processing capabilities for large area workpieces.

An object of the present invention is a continuous substrate using a large-area plasma capable of treating a substrate by forming a plasma generation and processing uniformly while having a structure that is very easy to expand to a large area in accordance with an increase in the size of a larger substrate. To provide a processing system.

One aspect of the present invention for achieving the above technical problem relates to a continuous substrate processing system using a large area plasma.

A continuous substrate processing system using the large-area plasma of the present invention includes a plurality of process chambers continuously arranged to perform a continuous substrate processing process on a substrate to be processed; A plurality of plasma generating units for inducing plasma discharge in the plurality of process chambers; And a dual power supply system for supplying different frequency power to the plasma generation unit.

In one embodiment, the plasma generating unit includes an antenna coil for transmitting an induced electromotive force capable of generating an inductively coupled plasma into the process chamber; And a dielectric tube formed to surround the antenna coil.

In one embodiment, the plasma generating unit is provided between the antenna coil and the dielectric tube to surround the upper side of the antenna coil includes a magnetic core for enhancing the strength of the magnetic field induced into the process chamber.

In one embodiment, the dual power supply system comprises: first and second power supplies for providing different frequency power to the antenna coil, respectively; And at least one frequency pass filter connected to the antenna coil to distribute frequency power delivered through the plasma generation unit.

In one embodiment, the frequency pass filter is a high pass filter for distributing high frequency power delivered through the plasma generating unit.

In one embodiment, the frequency pass filter is a low pass filter for distributing low frequency power delivered through the plasma generating unit.

In one embodiment, the first power supply provides a higher frequency power to the plasma generation unit than the second power supply.

In one embodiment, the first power supply is connected in parallel with the antenna coil.

In one embodiment, the second power supply is connected in series with the antenna coil.

In one embodiment, the high pass filter is connected in parallel with the antenna coil.

In one embodiment, the low pass filter is connected in series with the antenna coil.

In one embodiment, the high pass filter is a capacitor.

In one embodiment, the lowpass filter is an inductor.

In one embodiment, the continuous substrate processing system includes a load chamber and a connected unload chamber, respectively, connected to consecutively arranged front and rear ends of the plurality of process chambers.

In one embodiment, the plurality of process chambers perform two or more substrate processing processes on the same substrate.

In one embodiment, the plurality of process chambers include an arrangement structure in which one to-be-processed substrate repeats at least two or more process chambers so as to perform two or more substrate processing processes on the same to-be-processed substrate in a circulation section. .

In one embodiment, the plasma generation unit is provided between the antenna coil and the dielectric tube to surround the upper side of the antenna coil and includes a magnetic core for enhancing the strength of the magnetic field induced into the process chamber.

In one embodiment, the continuous substrate processing system further includes a gas supply unit disposed above the process chamber to supply process gas into the process chamber.

The gas supply unit may include a gas inlet for injecting the process gas into an upper portion of the gas supply unit; A plurality of plasma unit installation grooves for installing the plasma generation unit below the gas injection hole; And a plurality of gas injection holes formed therebetween so that the process gas can be supplied into the process chamber between the plurality of plasma unit installation grooves.

In one embodiment, the gas injection hole is further provided through the upper portion of the plasma unit installation groove so that the process gas is in contact with the plasma generating unit is supplied into the process chamber.

In one embodiment, the gas supply part is formed of a conductor to generate a discharge between the plasma generating unit and the plasma generating unit.

In one embodiment, the gas supply comprises one gas supply channel or two or more separate gas supply channels.

In one embodiment, the continuous substrate processing system includes a distribution circuit for distributing power provided from the first power supply to the plurality of plasma generating units.

In one embodiment, an impedance matcher is configured between the first power supply and the distribution circuit to perform impedance matching.

In one embodiment, an impedance matcher configured to perform impedance matching between the second power supply and the plasma generating unit.

In one embodiment, the distribution circuit comprises a current balancing circuit for adjusting the balance of the current supplied to the plurality of plasma generating units.

In one embodiment, the continuous substrate processing system includes a filter for preventing different frequencies from flowing into the first and second power supplies among the current supplied to the plasma generating unit.

According to the plasma reactor of the present invention, a uniform current flow is formed in the antenna by using a high frequency and a low frequency to uniformly generate a large-area high-density plasma. In addition, it is very easy to expand the large area in accordance with the increase in the size of the large substrate. It also eliminates the dielectric window, which improves power delivery efficiency.

In order to fully understand the present invention, preferred embodiments of the present invention will be described with reference to the accompanying drawings. Embodiment of the present invention may be modified in various forms, the scope of the invention should not be construed as limited to the embodiments described in detail below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Therefore, the shape of the elements in the drawings and the like may be exaggerated to emphasize a more clear description. It should be noted that the same members in each drawing are sometimes shown with the same reference numerals. Detailed descriptions of well-known functions and constructions which may be unnecessarily obscured by the gist of the present invention are omitted.

1 illustrates a continuous substrate processing system in accordance with a preferred embodiment of the present invention.

As shown in FIG. 1, the continuous substrate processing system 1 includes a plurality of process chambers 100 arranged in series, a gas supply system 3 for supplying a process gas, and an exhaust system 7 for gas exhaust. It is provided. In addition, it is further provided with a transfer means 9 for transferring the substrate 50 to serve as a substrate support for supporting the substrate 50 to be processed. The conveying means 9 is connected and biased to the bias power source 182, and the bias power supply 182 is electrically connected to the conveying means 9 and biased through the impedance matcher 184.

The dual bias structure of the transfer means 9 facilitates the generation of plasma inside the plasma reactor 100 and can further improve the plasma ion energy control to improve process productivity. At this time, the first and second bias power supply (182a, 182b) for supplying different frequency power is provided. Alternatively, it may be modified to a single bias structure. Alternatively, the substrate support 124 may be modified to have a zero potential without supplying bias power. And the conveying means 9 may comprise an electrostatic chuck (not shown). Alternatively, the conveying means 9 may include a heater (not shown).

The plurality of process chambers 100 includes a plurality of plasma generating units 150 for inducing plasma discharge and a gas supply unit 140 for supplying process gas into the process chamber 100. The dual power supply system 5 for supplying power to the plasma generating unit 150 provided in the plurality of process chambers 100 is provided.

The gas supply system 3 receives the necessary process gas from the gas supply source 4 so as to be provided to the gas supply unit 140 of the plurality of process chambers 100. The gas supply system 3 includes a plurality of gas supply valves 3a for supplying necessary process gases, and selects an appropriate gas from a gas supply source according to a recipe of a substrate processing process performed in each process chamber 100. The gas supply unit 140 of the corresponding process chamber 100 is provided.

The exhaust system 7 controls the vacuum control of the plurality of process chambers 100 and the exhaust of the process gases. The exhaust system 7 has a plurality of exhaust valves 7a for exhausting each process chamber 100. The plurality of process chambers each have an independent vacuum pump and have an independent exhaust structure. However, it may include at least two process chambers having a common exhaust structure. In the case of having a common exhaust structure, the number of vacuum pumps can be reduced, thereby reducing equipment costs.

The plurality of process chambers 120 are continuously arranged to perform a continuous substrate processing process. The plurality of process chambers 120 may include deposition chambers such as, for example, chemical vapor deposition chambers and physical vapor deposition chambers for processing various substrates. Or an etching chamber or an electroplating chamber. Or a cooling chamber and a preheating chamber. As such, the plurality of process chambers 120 may be provided with various kinds of process chambers for substrate processing of the substrate to be processed. The plurality of process chambers may include a preheating chamber for preheating the substrate 50 or a heating chamber for heating the substrate. Or a cleaning chamber for cleaning the substrate to be processed. As such, although all of the plurality of process chambers 120 may be process chambers 120 having plasma generating units 150, some of the process chambers 120 may not be provided.

The body constituting the plurality of process chambers 120 may be made of a metal material such as aluminum, stainless steel, copper, or a coated metal, for example, anodized aluminum or nickel plated aluminum. Alternatively, it may be made of refractory metal. Alternatively, it is possible to fabricate the body in whole or in part from an electrically insulating material such as quartz or ceramic. As such, the body may be made of any material suitable for carrying out the intended plasma process. The structure of the body may have a suitable structure depending on the substrate to be processed and for uniform generation of the plasma.

Substrates to be processed are, for example, substrates such as wafer substrates, glass substrates, plastic substrates and the like for the manufacture of various devices such as semiconductor integrated circuit devices, flat panel display devices, solar cells and the like. The plasma reactor is connected to a vacuum pump (not shown). The plasma reactor is subjected to plasma treatment on the substrate to be treated at a low pressure below atmospheric pressure. However, the plasma reactor of the present invention may also be implemented as an atmospheric plasma processing system for processing a substrate under atmospheric pressure.

The load chamber 122 is connected to the front end of the plurality of process chambers 120, and the unload chamber 124 is connected to the rear end, respectively. The load chamber 122 and the unload chamber 124 are also connected to a vacuum pump (not shown) controlled by the exhaust system 7. The substrate 50 to be processed before being loaded into the load chamber 122 is subjected to substrate processing through the plurality of process chambers 120. The processed substrate 50 is unloaded into the undoor chamber 124. The plurality of process chambers and respective connecting portions of the load chamber 122 and the unload chamber 124 may be provided with appropriate opening and closing means (not shown) to avoid mutual process interference.

In the dual power supply system 5, different frequency powers are provided to the plasma generating unit 150 provided in the plurality of process chambers 120. In the present invention, an embodiment of controlling the plurality of process chambers 120 through one dual power supply system 5 has been described. However, a separate plasma is provided by providing a dual power supply system 5 for each process chamber 120. The process can also be carried out. This dual power supply system 5 is described in detail below.

The gas supply unit 140 includes a gas injection hole 142, a plasma unit installation groove 146, and a gas injection hole 144. The gas injection hole 142 is provided above the gas supply unit 140 to receive a process gas for generating a plasma from the outside. The plasma unit installation groove 146 is formed under the gas supply unit 140 to install the plasma generation unit 150. In this case, the plasma unit installation groove 146 is formed in the same shape as the outer circumferential surface of the plasma generating unit 150.

2 and 3 illustrate a gas supply unit included in a continuous substrate processing system.

As shown in FIG. 2 and FIG. 3, each of the plurality of process chambers is provided with a gas supply unit 140 for receiving a process gas from the gas supply system 3 to provide a process gas into the process chamber 120. do.

The gas supply unit 140 includes a gas injection hole 142, a plasma unit installation groove 146, and a gas injection hole 144. The gas injection port 142 is provided at the upper portion of the gas supply unit 140 to supply a process gas for generating a plasma from the outside. The plasma unit installation groove 146 is formed under the gas supply unit 140 to install the plasma generation unit 150. In this case, the plasma unit installation groove 146 is formed in the same shape as the outer circumferential surface of the plasma generating unit 150.

The gas injection hole 144 is formed through the gas supply part 140 to supply the process gas provided through the gas injection hole 142 into the process chamber 120. In this case, the gas injection holes 144 are provided between the plurality of plasma unit installation grooves 146, respectively, so that the process gas is evenly supplied into the process chamber 120. That is, plasma is generated by the process gas and the plasma generation unit 150 supplied through the gas supply unit 140 to react with the substrate to be processed in the process chamber 120.

4 is a diagram illustrating a first embodiment of a gas supply unit included in a continuous substrate processing system.

As shown in FIG. 4, the gas injection hole 144 is formed through the gas supply unit 140 to supply the process gas provided through the gas injection hole 142 into the process chamber 120. In this case, the gas injection holes 144 are provided between the plurality of plasma unit installation grooves 146, respectively, so that the process gas is evenly supplied into the process chamber 120. That is, plasma is generated by the process gas supplied through the gas supply unit 140 and the plasma generating unit 150 to react with the substrate 50 inside the process chamber 120.

5 is a diagram illustrating a second embodiment of a gas supply unit included in a continuous substrate processing system.

As illustrated in FIG. 5, the gas injection hole 144 may be supplied to the process chamber 120 while contacting the process gas injected into the plasma generating unit 150 installed in the plasma unit installation groove 146. It is formed through the upper portion of the installation groove 146. That is, the process gas provided through the gas supply unit 140 is evenly sprayed between the plasma unit installation grooves 146 and the gas injection holes 144 provided in the plasma unit installation grooves 146, and is evenly distributed in the process chamber 120. Allow plasma to be formed.

2 and 3, the plasma generating unit 150 includes an antenna coil 156 and a dielectric tube 152.

The antenna coil 158 receives frequency power from the dual power supply system 5 and delivers induced electromotive force for generating inductively coupled plasma into the process chamber 120. At this time, since the antenna coil 156 generates heat by the provided frequency power, coolant (not shown) flows along the inside of the antenna coil 156 to cool such heat therein.

The dielectric tube 152 is formed in a hollow tube shape, and the antenna coil 156 is installed therein. That is, the dielectric tube 152 is formed in a form surrounding the outside of the antenna coil 156. The induced magnetic field induced by the antenna coil 156 is generated between the plurality of dielectric tubes 152. In addition, an induction electric field is generated along the plurality of dielectric tubes 152 by the induction magnetic field, thereby generating a large-area plasma in the upper portion of the process chamber 120.

In addition, in order to enhance the strength of the magnetic field induced by the antenna coil 156, the magnetic core 154 may be installed in the plurality of dielectric tubes 152, respectively. The magnetic core 154 is installed to surround the antenna coil 156 on the upper side to enhance the strength of the magnetic field induced into the process chamber 120.

6 is a cross-sectional view of a gas supply unit having two gas supply channels.

As shown in FIG. 6, the gas supply unit 140 may be provided with a plurality of gas supply channels to supply different kinds of gases. In one embodiment of the present invention, the gas supply unit 140 is formed in a two-layer structure. The first gas is supplied to the upper layer to be injected into the gas injection holes 144 provided between the plasma unit installation grooves 146. In addition, the second gas is supplied to the lower layer to be injected into the gas injection hole 144 provided on the plasma unit installation groove 146.

In this case, the mixed gas of two or more process gases may be supplied to the upper and lower layers of the gas supply unit 140 in the same manner, or different process gases may be supplied to the upper and lower layers, respectively.

7 is a cross-sectional view illustrating a phenomenon in which a discharge occurs between the gas supply unit and the plasma generating unit.

As shown in FIG. 7, the gas supply unit 140 according to the preferred embodiment of the present invention is formed of a conductor, and discharge occurs between the plasma generating unit 150 installed in the gas supply unit 140 to form a magnetic field. do. That is, the plasma inductively coupled through the plasma generating unit 150 is induced, and a discharge occurs between the plasma generating unit 150 and the gas supply unit 140 to induce the plasma. Therefore, a uniform and large area plasma is formed in the plasma reactor 100.

8 and 9 are cross-sectional views illustrating a plurality of antenna coils included in a plasma generating unit.

In the exemplary embodiment of the present invention, one antenna coil 156 is installed inside the dielectric tube 152. However, as shown in FIGS. 8 and 9, two or three inside the dielectric tube 152 are illustrated. Antenna coils 156 may be provided. In other words, the antenna coil 156 may be provided inside the dielectric tube 152 regardless of the number of the antenna coils 156.

FIG. 10 is a diagram illustrating a folded antenna coil, and FIG. 11 is a diagram illustrating a continuous antenna coil.

As shown in FIGS. 10 and 11, the antenna coil 156 may be formed in a folded form or in a double continuous form. The antenna coil 156 receives frequency power from the power supplies 162 and 164 and transmits induced electromotive force for generating inductively coupled plasma into the process chamber 120.

It can be seen that the induced magnetic field induced by the antenna coil 156 is alternately generated in the vertical direction between the plurality of plasma generating units 150. In addition, an induced electric field is generated along the plurality of plasma generating units 150 by the induced magnetic field, thereby generating a large area of plasma in the upper portion of the process chamber 120.

12 and 13 are diagrams illustrating that frequency power is applied and distributed to an antenna coil.

As shown in FIG. 12, the folded antenna coil 156 is connected to the dual power supply system 5. The dual power supply system 5 includes first and second power supplies 162 and 164 and a frequency pass filter. The first power supply 162 includes an impedance matcher 162b, a high frequency power supply 162a, and a filter 162c. The second power supply 164 also includes an impedance matcher 164b, a low frequency power supply 164a, and a filter 164c.

The impedance matcher 162b is provided between the high frequency power supply unit 162a and the antenna coil 156, and the impedance matcher 164b is provided between the low frequency power supply unit 164b and the antenna coil 156 to provide an impedance matching function. do.

A filter 162c is provided between the high frequency power supply unit 162a and the impedance matcher 162b to prevent the low frequency power transmitted through the antenna coil 156 from being applied to the high frequency power supply unit 162a. In addition, a filter 164c is provided between the low frequency power source 164a and the impedance matcher 164b to prevent high frequency power transmitted through the antenna coil 156 from being applied to the low frequency power source 164a.

The plasma reactor 100 also includes a frequency pass filter for passing a predetermined band frequency of the frequency power provided from the power supply. The frequency pass filter includes a high pass filter 170 for passing high frequency power and a low pass filter 180 for passing low frequency power.

The high frequency power is output from the first power supply 162 and the low frequency power is output from the second power supply 164. That is, one power supply device outputs a higher frequency than the other power supply device. In the exemplary embodiment of the present invention, the first power supply 162 outputs higher frequency power than the second power supply 164.

The antenna coil 156 is grounded through the high pass filter 170 and the low pass filter 180. In this case, the high pass filter 170 is implemented as a capacitor and the low pass filter 180 is implemented as an inductor. These capacitors and inductors adjust the power supply capacity to distribute the voltage across the power supply and ground points.

The first power supply 162 and the high pass filter 170 are connected in parallel to the antenna coil 156.

The high frequency power output from the first power supply 162 is distributed and flows toward the antenna coil 156 to which the high pass filter 170 is connected. That is, the high pass filter 170 allows high frequency power to be distributed for each node of the folded antenna coil 156. By uniformly distributed high frequency power, the induction magnetic field is uniformly formed in the antenna coil 156 to form a uniform and large-area plasma. In this case, when the antenna coil is folded as shown in FIG. 7, the high pass filter 170 has a number in which the high frequency power output from the first power supply 162 can be uniformly distributed to each of the folded antenna coils 156. It is preferable to be.

The second power supply 164 and the low pass filter 180 are connected in series to the antenna coil 156.

The low frequency power is output from the second power supply 164 connected to one side of the antenna coil 156 and grounded through the low pass filter 180 connected to the other side of the antenna coil 156.

In the present invention, the high frequency power is uniformly distributed through the high frequency power and the plurality of high pass filters 170 to form a plasma, but the low frequency power is uniformly distributed through the low frequency power and the plurality of low pass filters 180. To form a plasma.

In addition, as shown in FIG. 13, the high frequency power supply unit 162a for supplying high frequency power to the middle portion of the folded antenna coil 156 is connected, and the high pass filter 170 is connected to the antenna coil 156 at both ends. The high frequency power can be evenly distributed.

The current distribution circuit 200 distributes and supplies power from the power supply unit to various points of the antenna coil 156 of the plasma generation unit 150. In addition, the current distribution circuit 200 includes a current balancing circuit for adjusting the balance of the current supplied to the plurality of plasma generating units 150. Such a current balancing circuit is well known and detailed description thereof will be omitted.

14 is a diagram illustrating a connection state of a high pass filter and a low pass filter according to the shape of an antenna coil.

As shown in FIG. 14, the first power supply 162 and the plurality of high pass filters 170 are connected in parallel to the square spiral antenna coil 300, and the second power supply 164 and the low pass filter ( By connecting 180 in series, the frequency power flows uniformly along each antenna coil 156 to form a uniform large area plasma.

That is, it is preferable that the configuration is capable of uniformly distributing high frequency or low frequency power to the antenna coil 156 regardless of the form of the antenna coil 156.

The embodiment of the continuous substrate processing system of the present invention described above is merely exemplary, and it is well understood that various modifications and equivalent other embodiments are possible to those skilled in the art to which the present invention pertains. You will know. Accordingly, it is to be understood that the present invention is not limited to the above-described embodiments. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims. It is also to be understood that the present invention includes all modifications, equivalents, and substitutes within the spirit and scope of the invention as defined by the appended claims.

1 illustrates a continuous substrate processing system in accordance with a preferred embodiment of the present invention.

2 and 3 illustrate a gas supply unit included in a continuous substrate processing system.

4 is a diagram illustrating a first embodiment of a gas supply unit included in a continuous substrate processing system.

5 is a diagram illustrating a second embodiment of a gas supply unit included in a continuous substrate processing system.

6 is a cross-sectional view of a gas supply unit having two gas supply channels.

7 is a cross-sectional view illustrating a phenomenon in which a discharge occurs between the gas supply unit and the plasma generating unit.

8 and 9 are cross-sectional views illustrating a plurality of antenna coils included in a plasma generating unit.

10 is a view showing a folded antenna coil.

11 shows a continuous antenna coil.

12 and 13 are diagrams illustrating that frequency power is applied and distributed to an antenna coil.

14 is a diagram illustrating a connection state of a high pass filter and a low pass filter according to the shape of an antenna coil.

* Description of the symbols for the main parts of the drawings *

1: continuous substrate processing system 3: gas supply system

3a: gas supply valve 4: gas supply source

5: dual power supply system 7: exhaust system

7a: exhaust valve 9: transfer means

50: substrate to be processed 100: plasma reactor

120: process chamber 122: load chamber

124: unload chamber 140: gas supply

142: gas injection hole 144: gas injection hole

146: plasma unit installation groove 150: plasma generating unit

152: dielectric tube 154: magnetic core

156: antenna coil 162: first power supply device 162a: high frequency power supply unit 162b: impedance matching device

162c and 164c: filter 164: second power supply

164a: low frequency power supply unit 164b: impedance matcher

170: high pass filter 180: low pass filter

182: bias power source 184: impedance matcher

200: current distribution circuit 300: square spiral antenna coil

Claims (27)

A plurality of process chambers arranged in series for performing a continuous substrate processing process on the substrate to be processed; A plurality of plasma generating units for inducing plasma discharge in the plurality of process chambers; And And a dual power supply system for supplying different frequency power to the plasma generation unit. The method of claim 1, The plasma generating unit An antenna coil delivering an induced electromotive force capable of generating an inductively coupled plasma into the process chamber; And And a dielectric tube formed to surround the antenna coil. The method of claim 2, The plasma generating unit includes a magnetic core installed between the antenna coil and the dielectric tube to enclose an upper side of the antenna coil to enhance a strength of a magnetic field induced into the process chamber. Continuous substrate processing system used. The method of claim 1, The dual power supply system First and second power supplies for respectively providing different frequency power to the antenna coil; And And at least one frequency pass filter connected to the antenna coil for distributing frequency power delivered through the plasma generating unit. The method of claim 4, wherein And the frequency pass filter is a high pass filter for distributing high frequency power transmitted through the plasma generating unit. The method of claim 4, wherein And the frequency pass filter is a low pass filter for distributing low frequency power delivered through the plasma generation unit. The method of claim 4, wherein And the first power supply device provides a higher frequency power to the plasma generation unit than the second power supply device. The method of claim 7, wherein And the first power supply device is connected in parallel with the antenna coil. The method of claim 7, wherein The second power supply device is a continuous substrate processing system using a large area plasma, characterized in that connected in series with the antenna coil. The method of claim 5, The high pass filter is connected to the antenna coil in parallel, the continuous substrate processing system using a large area plasma. The method of claim 6, The low pass filter is connected to the antenna coil in series, the continuous substrate processing system using a large area plasma. The method of claim 10, And the high pass filter is a capacitor. The method of claim 11, The low pass filter is a continuous substrate processing system using a large area plasma, characterized in that the inductor. The method of claim 1, And the continuous substrate processing system includes a load chamber connected to each of the continuously arranged front and rear ends of the plurality of process chambers, and an unload chamber connected to the continuous substrate processing system. The method of claim 1, And said plurality of process chambers perform two or more substrate processing steps on the same substrate to be processed. The method of claim 15, The plurality of process chambers may include a large-area structure in which one to-be-processed substrate repeats at least two or more process chambers so as to perform two or more substrate processing processes on the same to-be-processed substrate in a circulation section. Continuous substrate processing system using plasma. The method of claim 1, The plasma generating unit includes a magnetic core installed between the antenna coil and the dielectric tube to enclose an upper side of the antenna coil and for increasing a strength of a magnetic field induced into the process chamber. Continuous substrate processing system. The method of claim 1, The continuous substrate processing system further comprises a gas supply unit installed above the process chamber to supply a process gas into the process chamber. The method of claim 18, The gas supply unit A gas inlet for injecting the process gas into the upper portion; A plurality of plasma unit installation grooves for installing the plasma generation unit below the gas injection hole; And And a plurality of gas injection holes formed therebetween so that the process gas can be supplied into the process chamber between the plurality of plasma unit installation grooves. The method of claim 19, And a gas injection hole penetrating through an upper portion of the plasma unit installation groove to supply the process gas into the process chamber while being in contact with the plasma generating unit. The method of claim 19, And the gas supply part is formed of a conductor so that discharge is generated between the plasma generating unit and the plasma generating unit. The method of claim 21, Wherein said gas supply comprises one gas supply channel or two or more separate gas supply channels. The method of claim 1, And the continuous substrate processing system comprises a distribution circuit for distributing power provided from the first power supply device to the plurality of plasma generating units. 24. The method of claim 23, And a impedance matcher configured to perform impedance matching between the first power supply and the distribution circuit. The method of claim 4, wherein And an impedance matcher configured between the second power supply and the plasma generating unit to perform impedance matching. 24. The method of claim 23, And the distribution circuit includes a current balance circuit for adjusting a balance of currents supplied to the plurality of plasma generating units. The method of claim 1, And the continuous substrate processing system includes a filter for preventing different frequencies from flowing into the first and second power supplies among the currents supplied to the plasma generating unit.

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