KR100756084B1 - Multi processing plasma chamber - Google Patents

Abstract

A multiple plasma reactor is provided to process at least two wafers in a row at a high speed by generating inductive coupled plasma of high-density. A vacuum chamber(110) has upper chambers(120) protruding from an upper portion of the vacuum chamber. At least two tubular discharge bridges(133) connect the upper chambers. A transformer(130) has at least one discharge bridge mounted in a magnetic core and a primary winding(132) supplied with radio frequency. A power supply source(140) supplies the radio frequency to the primary winding. A continuous plasma discharge loop is formed by the upper chambers and the discharge bridges.

Description

MULTI PROCESSING PLASMA CHAMBER}

In order to more fully understand the drawings used in the detailed description of the invention, a brief description of each drawing is provided.

1 is a perspective view of a multiple plasma reactor according to a first embodiment of the present invention.

2 and 3 are a cross-sectional view and a plan view of the multiple plasma reactor of FIG.

4 is a cross-sectional view of a multiple plasma reactor provided with a gas inlet at the top of the chamber.

5 is a plan view of a multiple plasma reactor showing an example in which a gas inlet is installed in a discharge bridge.

6 is a plan view of a multiple plasma reactor showing an example in which a connection pipe is installed in a discharge bridge.

7A and 7B are partial cross-sectional views of multiple plasma reactors showing examples of dual and single gas outlets.

8 is a perspective view of a multiple plasma reactor according to a second embodiment of the present invention.

9 is a perspective view of a plasma reactor according to a third embodiment of the present invention.

10 is a perspective view of a common gas supply pipe provided with a gas control valve.

11 is a perspective view of a multiple plasma reactor according to a fourth embodiment of the present invention.

12 and 13 are a cross-sectional view and a plan view of the multiple plasma reactor of FIG.

14 is a plan view of a multiple plasma reactor provided with a gas inlet in an external discharge tube.

15 is a plan view of a multiple plasma reactor showing an example in which one connecting tube is installed in the middle of an external discharge tube.

16 is a plan view of a multiple plasma reactor showing an example in which a plurality of connecting tubes are installed in an external discharge tube.

17 is a plan view of a multiple plasma reactor showing an example in which two independent external discharge tubes are installed.

18 is a partial cross-sectional view of a multiple plasma reactor showing an example in which a diffusion induction lamp is installed in the multiple plasma reactor.

19 is a perspective view of a multiple plasma reactor according to a fifth embodiment of the present invention.

20 and 21 are side and plan cross-sectional views of the multiple plasma reactor of FIG. 19.

22 is a perspective view of a multiple plasma reactor showing an example in which three discharge bridges are installed on the sidewall of the vacuum chamber.

23 is a perspective view of a plasma reactor according to a sixth embodiment of the present invention.

24 is a cross sectional top view of the multiple plasma reactor of FIG.

* Description of the symbols for the main parts of the drawings *

100: multiple plasma reactor 110: vacuum chamber

111: upper baffle 112: lower baffle

113: substrate support 114: substrate to be processed

133: discharge bridge

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma reactor, and more particularly, to a multiple plasma reactor having an integrated and multiplely arranged vacuum chamber for multi-processing two or more substrates simultaneously.

Plasma is a highly ionized gas containing the same number of positive ions and electrons. Plasma discharges are used for gas excitation to generate active gases containing ions, free radicals, atoms, molecules. The active gas is widely used in various fields and is typically used in a variety of semiconductor manufacturing processes such as etching, deposition, cleaning, ashing, and the like. There are a number of plasma sources for generating plasma, and the representative examples are capacitive coupled plasma and inductive coupled plasma using radio frequency.

It is known that an inductively coupled plasma source can easily increase the ion density with the increase of radio frequency power supply, and thus the ion bombardment is relatively low and suitable for obtaining a high density plasma. Therefore, inductively coupled plasma sources are commonly used to obtain high density plasma. Inductively coupled plasma sources are typically developed using a radio frequency antenna (RF antenna) and a transformer (also called transformer coupled plasma). The development of technology to improve the characteristics of plasma, and to increase the reproducibility and control ability by adding an electromagnet or a permanent magnet or adding a capacitive coupling electrode.

As the radio frequency antenna, a spiral type antenna or a cylinder type antenna is generally used. The radio frequency antenna is disposed outside the plasma reactor and transmits induced electromotive force into the plasma reactor through a dielectric window such as quartz. Inductively coupled plasma using a radio frequency antenna can obtain a high density plasma relatively easily, but the plasma uniformity is affected by the structural characteristics of the antenna. Therefore, efforts have been made to improve the structure of the radio frequency antenna to obtain a uniform high density plasma.

However, in order to obtain a large plasma, it is limited to widen the structure of the antenna or increase the power supplied to the antenna. For example, it is known that a non-uniform plasma is generated in the radiographic state by a standing wave effect. In addition, when high power is applied to the antenna, the capacitive coupling of the radio frequency antenna increases, so that the dielectric window must be thickened, thereby increasing the distance between the radio frequency antenna and the plasma, thereby increasing power transmission efficiency. The problem of being lowered occurs.

An inductively coupled plasma using a transformer induces a plasma inside a plasma reactor using a toilet transformer. The inductively coupled plasma completes a secondary circuit of the transformer. Conventional transformer-coupled plasma technologies have been developed by placing an external discharge tube in a plasma reactor or a closed core in a toroidal chamber or by embedding a transformer core inside a plasma reactor. ought.

The transformer coupled plasma improves the plasma characteristics and the transformer coupling structure to improve the plasma characteristics and energy transfer characteristics. In particular, in order to obtain a large-area plasma, the coupling structure of the transformer and the plasma reactor may be improved, a plurality of external discharge tubes may be provided, or the number of built-in transformer cores may be increased. However, simply increasing the number of external discharge tubes or increasing the number of transformer cores embedded therein makes it difficult to obtain high density large area plasma uniformly.

As in any industrial field, various efforts have been made to increase productivity in the semiconductor industry for manufacturing semiconductor integrated circuit devices and liquid crystal display devices. In order to increase productivity, production facilities basically need to be increased or improved. However, simply increasing the production equipment, as well as the expansion cost of the process equipment as well as the space equipment of the clean room has a problem that the high cost occurs.

In particular, in the semiconductor manufacturing process, productivity per unit area is one of the important factors affecting the price of the final product. Thus, technologies are being provided to effectively arrange the components of a production plant in a way to increase productivity per unit area. For example, a plasma reactor for processing two substrates in parallel is provided. However, most plasma reactors that process two substrates to be processed in parallel are equipped with two plasma sources, which does not substantially minimize process equipment.

If two or more plasma reactors are arranged vertically or horizontally in parallel, the common part of each component can be shared and two substrates can be processed in parallel by one plasma source. There will be several benefits to minimization.

In the recent semiconductor manufacturing industry, plasma processing technology has been further improved due to various factors such as ultra-miniaturization of semiconductor devices, the enlargement of silicon wafer substrates for manufacturing semiconductor circuits, the enlargement of glass substrates for manufacturing liquid crystal displays, and the emergence of new target materials. This is required. In particular, there is a need for improved plasma sources and plasma processing techniques that have good processing capabilities for large area substrates.

In addition, the enlargement of the substrate to be processed causes an increase in the overall production equipment. Larger production facilities increase the overall plant area, resulting in increased production costs. Therefore, there is a need for plasma source and plasma processing systems that can minimize the installation area.

It is an object of the present invention to provide a multiple plasma reactor having an efficient facility structure for parallel processing of two or more substrates to be processed at high speed and capable of uniformly obtaining a high density plasma.

One aspect of the present invention for achieving the above technical problem relates to a multiple plasma reactor. The multiple plasma reactor of the present invention comprises: a vacuum chamber having a chamber top raised in two parts; At least two tubular discharge bridges connected across the chamber; A transformer having a magnetic core mounted to at least one discharge bridge and a primary winding supplied with radio frequency; And a power source for supplying a radio frequency to the primary winding, wherein a continuous plasma discharge loop is formed through the chamber top and through two or more discharge bridges.

In this embodiment, the vacuum chamber comprises: two substrate supports installed inside the vacuum chamber to be positioned below the chamber top; An upper baffle installed in the vacuum chamber across the lower end of the chamber and in which a plurality of holes are formed; And a lower baffle installed above the bottom of the vacuum chamber and below the top of the substrate support and formed with a plurality of holes.

In this embodiment, it includes a gas inlet that is installed in each of the two raised portions of the chamber top.

In this embodiment, it includes one or more gas inlets installed in the discharge bridge.

In this embodiment, it includes at least one connecting tube connecting two discharge bridges in the middle and at least one gas inlet installed in the connecting tube.

In this embodiment, one or more gas outlets are installed to the bottom of the vacuum chamber.

According to another aspect of the invention, a multiple plasma reactor includes: a vacuum chamber having a raised two-part chamber top; Horseshoe-type discharge tubes respectively installed on opposite side walls of the upper chamber; A transformer having a magnetic core respectively installed in a horseshoe discharge tube and a primary winding supplied with a radio frequency; And a power supply for supplying a radio frequency to the primary winding.

In this embodiment, it includes a common gas supply pipe connected to two horseshoe-shaped discharge pipes and one or more gas control valves installed in the common gas supply pipe.

According to still another aspect of the present invention, a multiple plasma reactor includes: a vacuum chamber having a raised two part chamber top; An annular outer discharge tube having an introduction tube connected to opposite sidewalls of the upper chamber; A transformer having a magnetic core and a primary winding supplied with a radio frequency respectively installed in the outer discharge tube; And a power supply for supplying a radio frequency to the primary winding.

In this embodiment, it includes a common gas supply pipe connected to two horseshoe-shaped discharge pipes and one or more gas control valves installed in the common gas supply pipe.

According to still another aspect of the present invention, a multiple plasma reactor includes: a vacuum chamber having a raised two part chamber top; An annular external discharge tube to which the introduction tube is connected to the upper portion of the chamber; A transformer having a magnetic core installed in an external discharge tube and a primary winding supplied with a radio frequency; And a power supply for supplying a radio frequency to the primary winding.

In this embodiment, the vacuum chamber comprises: two substrate supports installed inside the vacuum chamber to be positioned below the chamber top; An upper baffle installed in the vacuum chamber across the lower end of the chamber and in which a plurality of holes are formed; And a lower baffle installed above the bottom of the vacuum chamber and below the top of the substrate support and formed with a plurality of holes.

In this embodiment, each gas inlet is provided in the external discharge tube.

In this embodiment, at least one connecting tube connecting across the middle portion of the outer discharge tube and at least one gas inlet installed in the connecting tube is included.

In this embodiment, the annular outer discharge tube includes two annular outer discharge tubes that are independent of each other.

In this embodiment, at least two diffusion shades are installed inside the vacuum chamber.

According to another aspect of the present invention, a multiple plasma reactor includes: a vacuum chamber having two or more substrate supports on which a substrate to be processed is placed; Two or more horseshoe-shaped discharge tubes having an introduction tube extending into the vacuum chamber to reach the top of each substrate support; A transformer having a magnetic core installed in each horseshoe discharge tube and a primary winding supplied with radio frequency; And a power supply for supplying a radio frequency to the primary winding.

In this embodiment, the vacuum chamber comprises: an upper baffle installed inside the vacuum chamber across the upper portion of the substrate support and the lower portion of the introduction tube, the upper baffle having a plurality of holes; And a lower baffle installed above the bottom of the vacuum chamber and below the top of the substrate support and formed with a plurality of holes.

According to another aspect of the present invention, a multiple plasma reactor includes: a vacuum chamber having two or more substrate supports on which a substrate to be processed is placed; Two or more external discharge tubes having an introduction tube extending into the vacuum chamber to reach an upper portion of each substrate support; A transformer having a magnetic core installed in each external discharge tube and a primary winding supplied with radio frequency; And a power supply for supplying a radio frequency to the primary winding.

In this embodiment, the vacuum chamber comprises: an upper baffle installed inside the vacuum chamber across the upper portion of the substrate support and the lower portion of the introduction tube, the upper baffle having a plurality of holes; And a lower baffle installed above the bottom of the vacuum chamber and below the top of the substrate support and formed with a plurality of holes.

The embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited by the embodiments described below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Accordingly, the shape of the elements in the drawings and the like are exaggerated to emphasize a clearer description. In understanding the drawings, it should be noted that like parts are intended to be represented by the same reference numerals as much as possible. And detailed description of known functions and configurations that are determined to unnecessarily obscure the subject matter of the present invention is omitted.

Example 1

1 is a perspective view of a multiple plasma reactor according to a first embodiment of the present invention, Figures 2 and 3 are a cross-sectional view and a plan view of the multiple plasma reactor of FIG. 1 to 3, the multiple plasma reactor 100 according to the first embodiment of the present invention includes a vacuum chamber 110 having a chamber top 120 raised in two parts. The raised portion of the chamber top 120 has a structure in which the top is narrow and extends downward. Two or more tubular discharge bridges 133 are connected across the chamber top 120.

At least one discharge bridge 133 is equipped with a transformer 130 having a magnetic core 131 and a primary winding 132 supplied with a radio frequency. The magnetic core 121 is made of ferrite material but may be made of other alternative materials such as iron and air. The primary winding 132 is connected via an impedance matcher 141 to a power supply 140 that supplies radio frequencies. Each substrate support 113 is connected to a power source 142 through an impedance matcher 143 to a power source to which bias power is supplied. The power source for supplying the radio frequency may be configured using a power source that can control the output voltage without a separate impedance matcher.

The vacuum chamber 110 is provided with two substrate supports 113 installed inside the vacuum chamber 110 to be positioned below the upper chamber 120. An upper baffle 111 is formed in the vacuum chamber 110 in which a plurality of holes are formed across the lower end of the chamber upper 120. A lower baffle 112 is provided with a plurality of holes formed across the bottom of the vacuum chamber 110 and below the top of the substrate support 113.

4 is a cross-sectional view of a multiple plasma reactor in which a gas inlet is provided in an upper portion of the chamber, and FIG. 5 is a plan view of a multiple plasma reactor in which an gas inlet is installed in a discharge bridge. 6 is a plan view of a multiple plasma reactor showing an example in which a connection pipe is installed in a discharge bridge.

As shown in FIG. 4, in the multiple plasma reactor 100, gas inlets may be installed at two raised portions of the upper chamber 120. Alternatively, as shown in FIG. 5, in the multiple plasma reactor 100, one or more gas inlets 136 may be configured in the discharge bridge 133. Alternatively, as shown in FIG. 6, one or more connecting pipes 137 connecting two discharge bridges 133 in the middle may be installed, and one or more gas inlets 136 may be configured in the connecting pipe 137. As such, the gas may be supplied to the multiple plasma reactor 100 by various methods. In particular, in the case of configuring the connection pipe 137, the plasma discharge loop 150 is formed by being divided into both sides with respect to the connection pipe 137.

7A and 7B are partial cross-sectional views of multiple plasma reactors showing examples of dual and single gas outlets. As shown in FIG. 7A, the plasma reaction chamber 100 may include two gas outlets 160 and 162 that are divided into two sides of the bottom of the vacuum chamber 110. The two gas outlets 160 and 162 are connected and exhausted in common through one exhaust pipe 164. Alternatively, as illustrated in FIG. 7B, one gas outlet 163 may be configured at the bottom center portion of the vacuum chamber 110 so that the gas is exhausted.

In the multi-plasma reactor 100 configured as described above, when a radio frequency is input from the power supply 140 to the primary winding 132, a current of the primary winding 132 is driven to complete the secondary circuit of the transformer 130. AC potential inside the chamber is induced. Accordingly, a continuous plasma discharge loop 150 is formed through the chamber top 120 and the two or more discharge bridges 133. The generated plasma flows down from the upper chamber 120, and flows through the upper baffle 111 to the substrate 114 disposed on the substrate support 113. Gases and unreacted gases generated after the reaction pass through the lower baffle 112 and are exhausted through the gas outlets 160, 162 or 163.

Such a multi-plasma reactor can generate inductively coupled high-density plasma to process two or more substrates in parallel at high speed. In particular, an inductively coupled plasma source consisting of two or more discharge bridges 133 configured in the upper chamber 120 and a transformer 130 mounted thereon share a common portion and the two substrates are separated by one plasma source. By allowing parallel processing, various benefits can be obtained by reducing the installation space and minimizing the configuration of the facilities.

Example 2

8 is a perspective view of a multiple plasma reactor according to a second embodiment of the present invention. Referring to FIG. 9, the multiple plasma reactor 200 of the second embodiment of the present invention includes a vacuum chamber 210 having a chamber top 220 raised in two parts. Since the internal configuration of the vacuum chamber 210 is the same as the vacuum chamber 110 of the first embodiment described above, repeated description thereof will be omitted.

The chamber top 220 has a structure that is vertically raised in two parts. Horseshoes type discharge tubes 233 are connected to opposite sidewalls of the upper chamber 220, respectively. The two horseshoe discharge tubes 233 are equipped with a transformer 230 having a magnetic core 231 and a primary winding 232 supplied with a radio frequency, respectively. Since the power supply structure of the substrate support (not shown) installed inside the transformer 230 and the vacuum chamber 210 is the same as that of the first embodiment described above, repeated description thereof will be omitted.

Two horseshoe discharge tubes 233 are connected to a common gas supply pipe 270. As shown in FIG. 10, the common gas supply pipe 270 may be configured with one or more gas control valves 73 to control the gas flow rate manually or automatically. The common gas supply pipe 270 is connected to a gas supply source (not shown) to supply process gas to the two horseshoe discharge tubes 233. The gas supply and exhaust structure can be variously modified as in the first embodiment described above.

Example 3

9 is a perspective view of a plasma reactor according to a third embodiment of the present invention. Referring to FIG. 9, the multiple plasma reactor 300 of the third embodiment of the present invention includes a vacuum chamber 310 having a chamber top 320 raised in two parts. Since the internal configuration of the vacuum chamber 310 is the same as that of the vacuum chamber 110 of the first embodiment described above, repeated description thereof will be omitted. Opposite side walls of the upper chamber 320 are connected to an annular outer discharge tube 333 to which an introduction tube 334 is connected. The two external discharge tubes 333 are equipped with a transformer 330 having a magnetic core 331 and a primary winding 332 supplied with a radio frequency, respectively. The power supply structure of the transformer 332 and the internal substrate support (not shown) of the vacuum chamber 310 is the same as that of the first embodiment described above, and thus repeated description thereof will be omitted.

The common gas supply pipe 370 is connected to the two external discharge pipes 333. As shown in FIG. 10, the common gas supply pipe 370 may be configured with one or more gas control valves 73 to control the gas flow rate manually or automatically. The common gas supply pipe 370 is connected to a gas supply source (not shown) to supply process gas to two external discharge pipes 333. The plasma generated from the two external discharge tubes 333 is input to the upper chamber 320 through the introduction tube 334. The gas supply and exhaust structure can be variously modified as in the first embodiment described above.

Example 4

11 is a perspective view of a multiple plasma reactor according to a fourth embodiment of the present invention, and FIGS. 12 and 13 are cross-sectional views and a plan view of the multiple plasma reactor of FIG. 11 to 13, the multiple plasma reactor 400 according to the fourth embodiment of the present invention includes a vacuum chamber 410 having a chamber top 420 raised in two parts. The raised portion of the chamber top 420 has a structure in which the top is narrow and extends downward. Two parts of the upper chamber 420 is configured with an annular external discharge tube 433 to which the introduction tube 434 is connected. In the annular external discharge tube 433, two introduction tubes 434 are connected to both sides. Two introduction tubes 434 are each connected to the center of the raised portion of the chamber top 420. The external discharge tube 433 is equipped with a transformer 430 having a magnetic core 432 and a primary winding 431 supplied with a radio frequency. The power supply structure of the substrate support 413 installed in the transformer 430 and the vacuum chamber 410 is the same as that of the first embodiment described above, and thus repeated description thereof will be omitted.

The vacuum chamber 410 is provided with two substrate supports 413 installed inside the vacuum chamber 410 to be positioned below the upper chamber 420. An upper baffle 411 having a plurality of holes formed across the lower end of the upper chamber 420 is installed inside the vacuum chamber 410. A lower baffle 412 is provided with a plurality of holes formed across the bottom of the vacuum chamber 410 and below the top of the substrate support 413.

14 is a plan view of a multiple plasma reactor in which a gas inlet is provided in an external discharge tube, and FIG. 15 is a plan view of a multiple plasma reactor showing an example in which one connecting tube is installed in the middle of an external discharge tube. 16 is a plan view of a multiple plasma reactor showing an example in which a plurality of connecting tubes are installed in an external discharge tube.

As shown in FIG. 14, in the multiple plasma reactor 400, one or more gas inlets 436 may be configured in the external discharge tube 433. Alternatively, as illustrated in FIG. 15, one connecting tube 437 connecting the external discharge tube 433 in the middle may be installed, and one or more gas inlets 436 may be configured in the connecting tube 437.

As illustrated in FIG. 16, the length of the external discharge tube 433 may be increased, and the plurality of connection tubes 437 may be connected at regular intervals. The gas inlet 436 is connected to one connection pipe 437, and the introduction pipe 434 is connected to the connection pipe 437 to which the gas inlet 436 is not connected.

As such, the gas may be supplied to the multiple plasma reactor 400 by various methods. In particular, when the connection tube 437 is configured in the external discharge tube 433, the plasma discharge loops 450, 450b, and 450c are divided into two sides with respect to the connection tube 437. As illustrated in FIG. 17, the annular external discharge tube 433 may be configured with two external discharge tubes independent from each other, and each external discharge tube 433 is provided with a gas inlet 436. Each gas inlet 435 may be connected to a common gas supply pipe 270 or 370 as shown in FIG. 10 to have a common gas supply structure.

18 is a partial cross-sectional view of a multiple plasma reactor showing an example in which a diffusion induction lamp is installed in the multiple plasma reactor. Referring to FIG. 18, the multiple plasma reactor 400 may have a flat top structure. At this time, the diffusion chamber shade 470 of the funnel mothership may be installed between the ceiling and the upper baffle 411 in the vacuum chamber 410. The spout portion of the diffusion shade 470 is connected to the introduction tube 434.

Example 5

19 is a perspective view of a multiple plasma reactor according to a fifth embodiment of the present invention, and FIGS. 20 and 21 are side and plan cross-sectional views of the multiple plasma reactor of FIG. 19. 19 to 21, the multiple plasma reactor 500 according to the fifth embodiment of the present invention includes a vacuum chamber 510 having two substrate supports 513 on which a substrate 514 to be processed is placed. . Since the internal configuration of the vacuum chamber 210 is the same as the vacuum chamber 110 of the first embodiment described above, repeated description thereof will be omitted.

Horseshoe-type discharge tubes 533 are connected to both outer sidewalls of the vacuum chamber 510, respectively. The horseshoe discharge tube 533 has an introduction tube 534 extending into the vacuum chamber 510 from one sidewall of the vacuum chamber 510 to the top of the substrate support 513. As a result, plasma is generated on the substrate 514.

Each horseshoe discharge tube 533 is equipped with a transformer 530 having a magnetic core 531 and a primary winding 532 which is supplied with radio frequency. The power supply structure of the substrate support 513 installed in the transformer 530 and the vacuum chamber 510 is the same as that of the first embodiment described above, and thus repeated description thereof will be omitted. The gas supply and exhaust structure can also be constructed using the same methods as the above examples.

When three substrate supports are provided inside the vacuum chamber 510 and three substrates are simultaneously processed, as illustrated in FIG. 22, three sidewalls of the vacuum chamber 510 and three other sidewalls are provided. A horseshoe discharge tube 533 and a transformer 530 may be installed respectively.

Example 6

FIG. 23 is a perspective view of a plasma reactor according to a sixth embodiment of the present invention, and FIG. 24 is a plan sectional view of the multiple plasma reactor of FIG. 23 and 24, the plasma reactor 600 according to the sixth embodiment of the present invention includes a vacuum chamber 610 having two substrate supports 613 on which a substrate 614 is to be placed. Since the internal configuration of the vacuum chamber 610 is the same as the vacuum chamber 110 of the first embodiment described above, repeated description is omitted.

An annular outer discharge tube 633 is connected to both outer sidewalls of the vacuum chamber 610, respectively. The external discharge tube 633 has an introduction tube 634 extending into the vacuum chamber 610 from one sidewall of the vacuum chamber 610 to the top of the substrate support 613. Thus, plasma is sprayed onto the substrate 614.

Each external discharge tube 633 is equipped with a transformer 630 having a magnetic core 631 and a primary winding 632 supplied with a radio frequency. The power supply structure of the substrate support 613 installed in the transformer 630 and the vacuum chamber 610 is the same as that of the first embodiment described above, and thus repeated description thereof will be omitted. The gas supply and exhaust structure can also be constructed using the same methods as the above examples.

In the case where three substrate supports are provided inside the vacuum chamber 610 and three substrates are processed simultaneously, the amount of the vacuum chamber 610 is the same as that illustrated in FIG. 22 in the fifth embodiment described above. Three external discharge tubes 633 and transformers 630 may be installed on one side wall and another side wall.

The plasma reactors of the first to sixth embodiments described above may simultaneously process two or more substrates to be processed in parallel. When constructing a plasma reactor that simultaneously processes three or more substrates to be processed, the scalability is high. That is, it is possible to construct a plasma reactor capable of simultaneously increasing the number of discharge bridges, horseshoe-shaped discharge tubes, and external discharge tubes, and configuring transformers accordingly, to simultaneously process a plurality of substrates to be processed in parallel.

The multiple plasma reactor according to the present invention can be variously modified and can take various forms. It is to be understood, however, that the present invention is not limited to the specific forms referred to in the above description, but rather includes all modifications, equivalents and substitutions within the spirit and scope of the invention as defined by the appended claims. It should be understood to do.

According to the multi-plasma reactor of the present invention as described above, two or more substrates to be processed can be processed in parallel at high speed, and high density plasma by inductive coupling can be uniformly obtained. In particular, it is possible to minimize the production equipment in providing a plasma reactor for processing a plurality of substrates in parallel.

Claims (20)

A vacuum chamber having a chamber top raised in two parts; At least two tubular discharge bridges connected across the chamber; A transformer having a magnetic core mounted to at least one discharge bridge and a primary winding supplied with radio frequency; And Including a power source for supplying radio frequency to the primary winding, A multiple plasma reactor in which a continuous plasma discharge loop is formed through a chamber top and two or more discharge bridges. The vacuum chamber of claim 1 wherein the vacuum chamber is: Two substrate supports installed inside the vacuum chamber to be positioned below the upper chamber; An upper baffle installed in the vacuum chamber across the lower end of the chamber and in which a plurality of holes are formed; And 10. A multiple plasma reactor comprising a lower baffle installed above the bottom of the vacuum chamber and below the top of the substrate support and formed with a plurality of holes. 2. The multiple plasma reactor of Claim 1 comprising gas inlets respectively installed in two raised portions of the chamber top. The multiple plasma reactor of Claim 1, comprising one or more gas inlets installed in the discharge bridge. 2. The multiple plasma reactor of Claim 1 comprising at least one connecting tube connecting two discharge bridges in the middle and at least one gas inlet installed in the connecting tube. The multiple plasma reactor of Claim 1, comprising one or more gas outlets installed into the bottom of the vacuum chamber. A vacuum chamber having a raised two part chamber top; Horseshoe-type discharge tubes respectively installed on opposite side walls of the upper chamber; A transformer having a magnetic core respectively installed in a horseshoe discharge tube and a primary winding supplied with a radio frequency; And A multiple plasma reactor comprising a power source for supplying radio frequencies to the primary winding. 8. The multiple plasma reactor according to claim 7, comprising a common gas supply pipe connected to two horseshoe discharge tubes and one or more gas control valves installed in the common gas supply pipe. A vacuum chamber having a raised two part chamber top; An annular outer discharge tube having an introduction tube connected to opposite sidewalls of the upper chamber; A transformer having a magnetic core and a primary winding supplied with a radio frequency respectively installed in the outer discharge tube; And A multiple plasma reactor comprising a power source for supplying radio frequencies to the primary winding. 8. The multiple plasma reactor according to claim 7, comprising a common gas supply pipe connected to two horseshoe discharge tubes and one or more gas control valves installed in the common gas supply pipe. A vacuum chamber having a raised two part chamber top; An annular external discharge tube to which the introduction tube is connected to the upper portion of the chamber; A transformer having a magnetic core installed in an external discharge tube and a primary winding supplied with a radio frequency; And A multiple plasma reactor comprising a power source for supplying radio frequencies to the primary winding. The vacuum chamber of claim 1 wherein the vacuum chamber is: Two substrate supports installed inside the vacuum chamber to be positioned below the upper chamber; An upper baffle installed in the vacuum chamber across the lower end of the chamber and in which a plurality of holes are formed; And 10. A multiple plasma reactor comprising a lower baffle installed above the bottom of the vacuum chamber and below the top of the substrate support and formed with a plurality of holes. 12. The multiple plasma reactor of claim 11, comprising gas inlets respectively installed in an external discharge vessel. 12. The multi-plasma reactor of claim 11, comprising one or more connecting tubes connecting across an intermediate portion of the outer discharge tube and one or more gas inlets installed in the connecting tubes. 12. The multi-plasma reactor of claim 11, wherein the annular outer discharge vessel comprises two annular outer discharge vessels independent of each other. 12. The multiple plasma reactor of Claim 11, comprising at least two diffusion shades installed within a vacuum chamber. A vacuum chamber having two or more substrate supports on which the substrate to be processed is placed; Two or more horseshoe-shaped discharge tubes having an introduction tube extending into the vacuum chamber to reach the top of each substrate support; A transformer having a magnetic core installed in each horseshoe discharge tube and a primary winding supplied with radio frequency; And A multiple plasma reactor comprising a power source for supplying radio frequencies to the primary winding. The vacuum chamber of claim 1 wherein the vacuum chamber is: An upper baffle installed inside the vacuum chamber across the upper portion of the substrate support and the lower portion of the introduction tube and having a plurality of holes formed therein; And 10. A multiple plasma reactor comprising a lower baffle installed above the bottom of the vacuum chamber and below the top of the substrate support and formed with a plurality of holes. A vacuum chamber having two or more substrate supports on which the substrate to be processed is placed; Two or more external discharge tubes having an introduction tube extending into the vacuum chamber to reach an upper portion of each substrate support; A transformer having a magnetic core installed in each external discharge tube and a primary winding supplied with radio frequency; And A multiple plasma reactor comprising a power source for supplying radio frequencies to the primary winding. The vacuum chamber of claim 1 wherein the vacuum chamber is: An upper baffle installed inside the vacuum chamber across the upper portion of the substrate support and the lower portion of the introduction tube and having a plurality of holes formed therein; And 10. A multiple plasma reactor comprising a lower baffle installed above the bottom of the vacuum chamber and below the top of the substrate support and formed with a plurality of holes.

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