CN111048392B - Plasma process equipment - Google Patents
Plasma process equipment Download PDFInfo
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- CN111048392B CN111048392B CN201911156301.2A CN201911156301A CN111048392B CN 111048392 B CN111048392 B CN 111048392B CN 201911156301 A CN201911156301 A CN 201911156301A CN 111048392 B CN111048392 B CN 111048392B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32321—Discharge generated by other radiation
- H01J37/32339—Discharge generated by other radiation using electromagnetic radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
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Abstract
The invention provides plasma process equipment which comprises an electromagnetic wave conversion assembly and a process cavity, wherein the electromagnetic wave conversion assembly comprises an antenna plate, the antenna plate is used for receiving electromagnetic waves and feeding the received electromagnetic waves into the process cavity in the form of an electromagnetic field, the antenna plate comprises a central area and an edge area arranged around the central area, and at least one edge slot is formed in the edge area of the antenna plate. In the invention, the edge gap formed at the edge of the antenna plate can generate an edge electromagnetic field with high field intensity at the edge position and low field intensity at the central field position, the edge electromagnetic field is complementary with the electromagnetic field generated by the gap at the center of the antenna plate, plasma which is uniformly distributed is obtained in the process cavity, so that the distribution uniformity of the plasma in the process cavity is improved, and the finally obtained electromagnetic field is equivalent to the superposition of the electromagnetic fields generated by two gap antennas, so that when environmental parameters are changed, the field intensity of the electromagnetic field is more stable, and the uniformity and the repeatability of a plasma process can be improved.
Description
Technical Field
The invention relates to the field of microelectronic processing equipment, in particular to plasma process equipment.
Background
When the plasma process is performed, firstly, process gas is introduced into the process chamber, then electromagnetic waves are provided to the slot antenna, the electromagnetic waves are fed into the process chamber through the slot antenna, an electromagnetic field is formed in the process chamber, the process gas is punctured to discharge, so that the process gas is ionized, plasma is excited, and therefore a workpiece to be processed (such as a wafer) in the process chamber is processed by the plasma process. However, when the surface wave plasma processing is performed by the conventional plasma processing equipment, the processing surface of the workpiece to be processed cannot be uniformly processed, and the processing effect is not good.
Therefore, how to provide a plasma processing apparatus capable of uniformly processing the surface of the wafer is a technical problem to be solved in the art.
Disclosure of Invention
The present invention is directed to providing a plasma processing apparatus capable of uniformly processing a wafer surface.
In order to achieve the above object, the present invention provides a plasma process apparatus including an electromagnetic wave conversion assembly and a process chamber, the electromagnetic wave conversion assembly including an antenna plate for receiving an electromagnetic wave, the antenna plate being disposed in the process chamber to feed the received electromagnetic wave into the process chamber in the form of an electromagnetic field, the antenna plate including a central region and an edge region disposed around the central region, at least one central slot being formed in the central region, and at least one edge slot being formed in the edge region.
Optionally, the central slit penetrates the central region in a thickness direction, and the edge slit penetrates the edge region in the thickness direction.
Preferably, the edge slit includes a first slit portion and a second slit portion communicating with the first slit portion, and an extending direction of the first slit portion intersects an extending direction of the second slit portion.
Preferably, for the same edge gap, the first gap portion extends along the circumferential direction of the central region, the second gap portion extends along the radial direction of the central region, one end of the second gap portion is connected to the first gap portion, and the other end of the second gap portion is located inside the first gap portion.
Optionally, the antenna board includes an antenna board main body, at least one connecting portion, and at least one arm portion, where the arm portion corresponds to the connecting portion one to one, the connecting portion is configured to connect an arm portion corresponding to the connecting portion with the antenna board main body, so as to form the edge gap between the arm portion and the antenna board main body, and an extending direction of the connecting portion intersects an extending direction of the arm portion.
Preferably, the arm support portion extends in a circumferential direction of the antenna board main body.
Preferably, the connection portion extends in a radial direction of the antenna board main body.
Optionally, a plurality of the central slits are arranged in an array along the circumferential direction.
Optionally, the electromagnetic wave conversion assembly further includes a quartz window and a slow wave plate, the slow wave plate is disposed on a side of the antenna plate facing away from the process chamber, and the quartz window is disposed on a side of the antenna plate facing the process chamber.
Optionally, the plasma processing apparatus further comprises an electromagnetic wave generating assembly for providing electromagnetic waves to the antenna plate.
In the plasma process equipment provided by the invention, the edge gap formed at the edge area of the antenna plate can generate the edge electromagnetic field with the trends of high field intensity at the edge position and low field intensity at the central field position, and the edge electromagnetic field is complementary with the electromagnetic field with the trends of low field intensity at the edge position and high field intensity at the central field position generated by the gap at the center of the antenna plate, so that plasma which is uniformly distributed in the process cavity is obtained, and the uniformity of the plasma distribution in the process cavity is improved. And the electromagnetic field finally obtained by the antenna plate is equivalent to the superposition of the electromagnetic fields generated by the two slot antennas, so that the field intensity of the electromagnetic field is more stable when environmental parameters are changed, and the uniformity and the repeatability of the plasma process can be improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic block diagram of one embodiment of a plasma processing apparatus provided in accordance with the present invention;
FIG. 2 is a schematic structural diagram of one embodiment of an antenna board in the plasma processing apparatus according to the present invention;
FIG. 3 is a schematic structural diagram of another embodiment of an antenna board in the plasma processing apparatus according to the present invention;
FIG. 4 is a schematic structural diagram of another embodiment of an antenna board in the plasma processing apparatus according to the present invention;
fig. 5 is a field intensity diagram of an electromagnetic field generated by the antenna board in fig. 2 when receiving the electromagnetic wave;
fig. 6 is a field intensity diagram of an electromagnetic field generated by the antenna board in fig. 3 when receiving an electromagnetic wave;
fig. 7 is a field intensity diagram of an electromagnetic field generated when a slot antenna in the related art receives an electromagnetic wave.
Description of the reference numerals
1: electromagnetic wave conversion component 2: process chamber
3: electromagnetic wave generating means 4: plasma body
100: the antenna board 110: edge gap
111: first slit portion 112: second gap part
120: antenna board main body 132: connecting part
131: the arm support portion 140: central slit
141: first central slit 142: second central gap
200: the quartz window 300: slow wave plate
301: microwave power supply 302: microwave source
303: the microwave resonant cavity 304: circulating device
305: water load 306: first waveguide
307: the impedance adjusting unit 308: second waveguide
309: short-circuiting piston 310: coaxial switching unit
311: tapered transition unit 312: coaxial probe
A1: central region a 2: edge region
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
The inventor of the present invention has found that the reason that the existing plasma processing equipment cannot uniformly process the surface of the wafer is that: a Slot Antenna applied to surface wave plasma processing in the related art is generally a circularly polarized Radial Slot Antenna (RLSA), that is, a Slot of the Slot Antenna is disposed in a central region of the Slot Antenna.
When the plasma process is carried out, after the electromagnetic waves are provided for the slot antenna, the field intensity (Mag-E) of the electromagnetic field generated by the slot antenna shows the tendency that the central field intensity (electric field intensity and magnetic field intensity) is high and the edge field intensity (electric field intensity and magnetic field intensity) is low (as shown in fig. 7), so that the uniformity of plasma distribution in the process cavity is influenced, and further the uniformity of the process is influenced.
Therefore, in order to solve the above technical problems, the present invention provides a plasma process apparatus, as shown in fig. 1 to 4, the plasma process apparatus comprising an electromagnetic wave conversion assembly 1 and a process chamber 2, the electromagnetic wave conversion assembly 1 comprising an antenna board 100, the antenna board 100 being configured to receive an electromagnetic wave, and the antenna board 100 being disposed within the process chamber 2 to feed the received electromagnetic wave into the process chamber 2 in the form of an electromagnetic field, the antenna board 100 comprising a central area a1 and an edge area a2 disposed around the central area a1, at least one central slot 140 being formed in the central area a1, and at least one edge slot 110 being formed in the edge area a 2.
The form of the edge slit 110 and the central slit 140 is not particularly limited, and for example, as shown in fig. 1 to 4, as one embodiment of the present invention, the central slit 140 penetrates the central region a1 in the thickness direction, and the edge slit 110 penetrates the edge region a2 in the thickness direction.
In the present invention, the edge region a2 of the antenna board 100 is formed with the edge slot 110, so that during the plasma process, the edge region a2 of the antenna board 100 will generate the edge electromagnetic field with high field intensity (electric field intensity, magnetic field intensity) at the edge position and low field intensity at the central field position, which is complementary to the electromagnetic field with high central field intensity and low edge field intensity generated by the central slot 140 at the center of the antenna board 100, and finally obtain the electromagnetic field with more uniform field intensity from the center to the edge, thereby obtaining the plasma with uniform distribution in the process chamber 2, and further improving the uniformity of the plasma process.
Further, the electromagnetic field generated by the antenna board 100 of the present application is equivalent to an electromagnetic field formed by superimposing radiation fields generated by two slot antennas, and in the process of performing a plasma process, the field strength of the electromagnetic field is more stable and is not easily changed along with changes of environmental parameters such as power or pressure, etc., so that the stability of plasma can be improved, and further, the uniformity and repeatability of the plasma process can be improved.
The arrangement of the central slits 140 in the central region a1 is not particularly limited in the present invention, and for example, as shown in fig. 2 to 4, a plurality of central slits 140 are arranged in an array in the circumferential direction.
In order to increase the field intensity of the electromagnetic field generated by the antenna board 100, it is preferable that, as shown in fig. 2 and 3, the edge slot 110 includes a first slot portion 111 and a second slot portion 112 communicated with the first slot portion 111, and an extending direction of the first slot portion 111 intersects an extending direction of the second slot portion 112.
In the present invention, the extending direction of the first slot portion 111 is set to intersect with the extending direction of the second slot portion 112, so that the polarization directions of the electromagnetic wave passing through the second slot portion 112 and the electromagnetic wave passing through the first slot portion 111 intersect with each other, and the electromagnetic waves fed to the two portions are cross-polarized, thereby improving the overall strength of the electromagnetic field generated by the edge region a 2.
In order to improve the compactness of the structure of the antenna panel 100 and improve the field strength of the fringe electromagnetic field, it is preferable that, as shown in fig. 2 and 3, for the same fringe slot 110, the first slot portion 111 extends along the circumferential direction of the central region a1, the second slot portion 112 extends along the radial direction of the central region a1, one end of the second slot portion 112 is connected to the first slot portion 111, and the other end of the second slot portion 112 is located inside the first slot portion 111.
The first slot parts 111 extend along the circumferential direction of the central area A1 of the antenna board 100, so that each first slot part 111 can increase the slot length as much as possible without increasing the radial width of the edge area A2, thereby improving the compactness of the structure of the antenna board 100 while improving the field intensity of the fringe electromagnetic field.
It should be noted that the number and distribution of the edge slots 110 in the present invention are not limited to the embodiment shown in fig. 2, for example, as shown in fig. 3, the first slot portions 111 may be distributed at different radial lengths from the central area, and in the present invention, the extending direction of the first slot portions 111 is the same as the extending direction of the edge area a2, so that the utilization rate of the radial width of the edge area a2 is improved, and the structure of the antenna board 100 is more compact.
It should be noted that the "inner side" refers to the side of the second slit part 112 facing the central region a1, and the other end of the second slit part 112 is located inside the first slit part 111 in the present invention, so that the length of the second slit part 112 is increased without changing the radian of the second slit part 112 and the utilization rate of the radial width of the edge region a2, and the field intensity of the electromagnetic field generated by the edge region a2 is increased.
In order to improve uniformity of the electromagnetic field generated by the antenna board 100, it is preferable that the antenna board 100 includes a plurality of edge slots 110, and the edge slots 110 are uniformly distributed along a circumferential direction of the central area a1, as shown in fig. 2 to 4.
The present invention is not limited to the specific size and arrangement of the first slit portion 111 and the second slit portion 112, and for example, as an embodiment of the first slit portion 111 and the second slit portion 112 of the present invention, as shown in fig. 2:
the first slit portion 111 is formed in an arc shape extending in the circumferential direction of the central region a1, and the arc degree thereof is less than 180 °. The width of the first slit part 111 is 2.5mm to 30mm, the width of the second slit part 112 is 2 mm to 10mm, and the length of the second slit part 112 is 10mm to 80 mm. The number of the first slit portions 111 (or the second slit portions 112) is more than 2, and preferably 4 as shown in fig. 2.
To improve the uniformity of plasma distribution in the process chamber, the edge slots 110 are preferably arranged in a central symmetry, and the center of symmetry is the geometric center of the antenna plate 100. In the present invention, the edge gaps 110 are distributed in a centrosymmetric manner, so that the electromagnetic fields fed through the edge gaps are also distributed in a centrosymmetric manner, and the electromagnetic fields in the edge regions are distributed more uniformly, thereby improving the uniformity of plasma distribution in the process chamber and further improving the uniformity of the plasma process.
As shown in fig. 5, which is a schematic diagram illustrating the field intensity distribution of the electromagnetic field generated by the antenna board 100 shown in fig. 2, since the electromagnetic wave generates horizontally and vertically polarized electromagnetic fields on the edge slot 110, which are equal to the central vertically polarized electromagnetic field generated by the electromagnetic wave on the central slot 140, a more uniform electromagnetic field is generated in the process chamber 2 (compared to the electromagnetic field shown in fig. 7), thereby improving the uniformity of the plasma distribution in the process chamber 2.
It should be noted that fig. 2 shows only one embodiment of the antenna board 100 of the present invention, and in practical use, the size and number of the central slots 140 and the length, width, number and shape of the edge slots 110 may be adjusted according to practical situations, so as to further improve the uniformity of the three-dimensional distribution.
As another embodiment of the present invention, as shown in fig. 4, the antenna board 100 includes an antenna board main body 120, at least one connecting portion 132, and at least one arm portion 131, wherein the arm portions 131 correspond to the connecting portions 132 one by one, and the connecting portion 132 is used for connecting the arm portion 131 corresponding to the connecting portion 132 with the antenna board main body 120, so as to form an edge gap 110 between the arm portion 131 and the antenna board main body 120.
In order to improve the compactness of the antenna board 100, the arm portion 131 preferably extends along the circumferential direction of the antenna board main body 120.
In the present invention, the arm portion 131 extends along the circumferential direction of the antenna board main body 120, so that the length of the arm portion 131 can be increased as much as possible without increasing the radial width of the edge area a2, and further, the length of the edge slot 110 is increased, thereby improving the compactness of the structure of the antenna board 100.
In order to increase the field strength of the electromagnetic field ultimately generated by the antenna board 100, the connection portion 132 preferably extends in the radial direction of the antenna board main body 120.
In the present invention, the connecting portion 132 extends in the radial direction of the antenna board body 120, so that the connecting portion 132 and the arm portion 131 are arranged to intersect with each other, and the electromagnetic wave passing through the edge of the connecting portion 132 intersects with the polarization direction of the electromagnetic wave passing through the edge slot 110, so that the electromagnetic waves fed thereto are cross-polarized, thereby improving the overall strength of the electromagnetic field generated by the edge area a 2.
The specific dimensions and arrangement of the branch arm 131 and the connecting portion 132 are not particularly limited, and for example, as an embodiment of the branch arm 131 and the connecting portion 132 of the present invention, as shown in fig. 4:
the arm support portion 131 extends in the circumferential direction of the antenna board main body 120 to form an arc shape, and the arc shape thereof is less than 180 °. The width of the arm part 131 is 2.5mm to 30mm, the width of the connecting part 132 is 2 mm to 10mm, and the length of the connecting part 132 is 10mm to 80 mm. The number of the arm portions 131 (or the connecting portions 132) is more than 2, preferably 4 as shown in fig. 4.
As shown in fig. 6, which is a diagram illustrating the field intensity distribution of the electromagnetic field generated by the antenna board 100 shown in fig. 4, since the electromagnetic wave of the present invention generates horizontally and vertically polarized electromagnetic fields on the arm portions 131 and the connecting portions 132, which are equal to the central vertically polarized electromagnetic field intensity generated by the electromagnetic wave on the central slot 140, a more uniform electromagnetic field is generated in the process chamber 2 (compared to the electromagnetic field shown in fig. 7), thereby improving the uniformity of the plasma distribution in the process chamber 2.
Preferably, the plurality of arm portions 131 and the connecting portion 132 are distributed in a central symmetry manner, and the symmetry center is the geometric center of the antenna board main body 120.
It should be noted that fig. 4 shows only one embodiment of the antenna board 100 of the present invention, and the size and number of the central slots 140 and the length, width, number and shape of the arm portions 131 and the connecting portions 132 can be adjusted according to practical situations in practical use to further improve the uniformity of plasma distribution in the process chamber 2.
In order to improve the uniformity and stability of the frequency of the electromagnetic wave fed through the antenna board 100, it is preferable that, as shown in fig. 1, the electromagnetic wave conversion assembly 1 further includes a quartz window 200 and a slow wave plate 300, the slow wave plate 300 is disposed on a side of the antenna board 100 facing away from the process chamber 2, and the quartz window 200 is disposed on a side of the antenna board 100 facing toward the process chamber 2.
It should be noted that, in the present invention, the quartz window 200, the antenna plate 100 and the slow wave plate 300 are sequentially disposed in the circular resonant cavity at the top of the process chamber 2. The electromagnetic wave received by the circular resonant cavity is generally an electromagnetic wave in a TM mode (i.e., a propagation mode in which a longitudinal component of a Magnetic Field is zero and a longitudinal component of an Electric Field is not zero during propagation of the electromagnetic wave)Electromagnetic waves are coupled through the slits of the antenna plate 100 to generate linearly polarized waves or circularly polarized waves, and enter the reaction chamber 2 through the quartz window 200, thereby exciting the plasma 4 when the density of the plasma 4 is not lower than a cutoff density (for example, the cutoff density of a commonly used 2.45GHz electromagnetic wave is n:. sup. n) c ＝7.4×10 10 cm -3 ) When this occurs, a surface wave plasma is formed which is distributed along the interface of the quartz window 200 and the plasma 4 (the energy of the surface wave plasma is confined in a region near the interface and exponentially decays with the propagation distance). Meanwhile, when the frequencies of the electromagnetic field radiation near field generated by the antenna plate 100 and the surface wave field are matched, a resonance strengthening effect is generated between the electromagnetic field radiation near field and the surface wave field to obtain a continuously strengthened surface wave field, so that high-density electrons frequently collide with neutral atoms after being accelerated, the high-density electrons are forced to move to a low-density area under the influence of a diffusion effect, the whole discharge balance is maintained, and stable surface wave plasma is formed to perform a plasma process on a wafer placed on the support table 21 at the bottom of the process chamber 2.
In the present invention, the quartz window 200 can stabilize the phase and wave velocity of the electromagnetic wave, making the TM mode electromagnetic wave received by the surface wave plasma more uniform, thereby improving the uniformity of the plasma distribution in the process chamber 2. The slow wave plate 300 can ensure that the frequency band of the electromagnetic wave is within a predetermined range, thereby ensuring the accuracy and stability of the surface wave field strength.
The material of the housing of the process chamber 2 is not particularly limited, and for example, the process chamber 2 may be made of a metal material such as aluminum alloy or stainless steel.
The structure of the central slot 140 is not particularly limited in the present invention, for example, as shown in fig. 2 to 4, the central slot 140 may preferably include a first central slot 141 and a second central slot 142, the first central slot 141 and the second central slot 142 correspond to each other one by one, and the first central slot 141 and the second central slot 142 are disposed to intersect with each other, so that a cross-polarized electromagnetic field can be generated in a central region of the antenna board 100, and thus the field strength of the electromagnetic field can be increased.
In order to improve the uniformity of the electromagnetic field in the central region of the antenna board 100, it is preferable that the central slots 140 are distributed in a concentric circle array as shown in fig. 2 to 4, where the concentric circle array is that the first central slot 141 and the second central slot 142 are circumferentially distributed with different radii, respectively, and the center of the distributed circumference of the first central slot 141 coincides with the center of the distributed circumference of the second central slot 142.
The present invention does not specifically limit how the plasma process apparatus receives the predetermined electromagnetic wave signal, and for example, optionally, as shown in fig. 1, the plasma process apparatus further includes an electromagnetic wave generating assembly 3 for supplying an electromagnetic wave to the antenna board 100.
The present invention does not specifically limit the structure of the electromagnetic wave generating assembly 3, for example, as shown in fig. 1, the electromagnetic wave generating assembly 3 may alternatively include a microwave power supply 301, a microwave source 302, and a microwave resonant cavity 303. The microwave power supply 301 is used to provide power to the microwave source 302, the microwave source 302 is used to generate microwaves (the frequency of the microwaves is usually 5.8GHz, 2.45GHz, 915MHz, the microwave source 302 may be a magnetron), and the microwave resonant cavity 303 is used to stabilize the wave speed and frequency of the microwaves.
Optionally, as shown in fig. 1, the electromagnetic wave generating assembly 3 may further include a current circulator 304 and a water load 305, where the current circulator 304 is configured to introduce the electromagnetic wave (i.e., the interfering noise) reflected from each position in the electromagnetic wave generating assembly 3 into the water load 305, so that the water load 305 absorbs the reflection work of the reflected electromagnetic wave.
Alternatively, as shown in fig. 1, the electromagnetic wave generating assembly 3 may further include a first waveguide 306 and a second waveguide 308 for smoothly transmitting the electromagnetic wave. The cross-sectional shapes of the first waveguide 306 and the second waveguide 308 are not particularly limited by the present invention, for example, the first waveguide 306 and the second waveguide 308 are optionally both rectangular waveguides.
Optionally, as shown in fig. 1, the electromagnetic wave generating assembly 3 may further include an impedance adjusting unit 307 for adjusting the overall impedance of the electromagnetic wave generating assembly 3 according to actual needs to adjust the wave speed and frequency of the electromagnetic wave. The invention is not limited to the selection of the impedance adjusting unit 307, and for example, the impedance adjusting unit 307 may adopt a three-screw tuner.
Optionally, as shown in fig. 1, the electromagnetic wave generating assembly 3 may further include a short-circuiting piston 309 for adjusting the standing wave distribution within the second waveguide 308.
Optionally, as shown in fig. 1, the electromagnetic wave generating assembly 3 may further include a coaxial converting unit 310, configured to convert a TE wave (i.e., an electromagnetic wave in TE mode, which refers to a propagation mode in which a longitudinal component of an Electric Field is zero and a longitudinal component of a magnetic Field is not zero during propagation of the electromagnetic wave) propagating in the second waveguide 308 into a TM wave (i.e., an electromagnetic wave in TM mode), so as to feed the microwave energy into the circular resonant cavity of the process cavity 2. Coaxial switching unit 310 includes a tapered transition unit 311 and a coaxial probe 312. Among them, the tapered transition portion of the tapered transition unit 311 may buffer the electric field distortion of the electromagnetic wave. When the electromagnetic wave generating assembly 3 may further include the coaxial converting unit 310, as shown in fig. 1, probe holes are formed at corresponding positions of the slow wave plate 300 so that the coaxial probes 312 can pass through the slow wave plate 300 to contact the antenna plate 100 through the probe holes.
It will be understood that the above embodiments are merely exemplary embodiments adopted to illustrate the principles of the present invention, and the present invention is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (6)
1. Plasma process apparatus comprising an electromagnetic wave conversion assembly and a process chamber, the electromagnetic wave conversion assembly comprising an antenna plate for receiving electromagnetic waves, the antenna plate being arranged within the process chamber to feed the received electromagnetic waves into the process chamber in the form of an electromagnetic field, characterized in that the antenna plate comprises a central area and an edge area arranged around the central area, at least one central slot being formed in the central area and at least one edge slot being formed in the edge area;
the antenna plate comprises an antenna plate main body, at least one connecting part and at least one supporting arm part, wherein the supporting arm parts correspond to the connecting parts one to one, the connecting parts are used for connecting the supporting arm parts corresponding to the connecting parts with the antenna plate main body so as to form the edge gap between the supporting arm parts and the antenna plate main body, and the extending directions of the connecting parts and the supporting arm parts are intersected.
2. The plasma process apparatus of claim 1, wherein the arm support portion extends along a circumferential direction of the antenna board main body.
3. The plasma process apparatus of claim 2, wherein the connection portion extends in a radial direction of the antenna board main body.
4. The plasma process apparatus of any of claims 1 to 3, wherein the plurality of central slits are arranged in a circumferential array.
5. The plasma process apparatus of any of claims 1 to 3, wherein the electromagnetic wave conversion assembly further comprises a quartz window and a slow wave plate, the slow wave plate being disposed on a side of the antenna plate facing away from the process chamber, the quartz window being disposed on a side of the antenna plate facing toward the process chamber.
6. The plasma process apparatus of any of claims 1 to 3, further comprising an electromagnetic wave generating assembly for providing electromagnetic waves to the antenna plate.
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| CN111048392B true CN111048392B (en) | 2022-09-16 |
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