CN110911260B - Surface wave plasma processing apparatus - Google Patents
Surface wave plasma processing apparatus Download PDFInfo
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- CN110911260B CN110911260B CN201811072940.6A CN201811072940A CN110911260B CN 110911260 B CN110911260 B CN 110911260B CN 201811072940 A CN201811072940 A CN 201811072940A CN 110911260 B CN110911260 B CN 110911260B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32247—Resonators
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Abstract
The invention provides surface wave plasma processing equipment which comprises a reaction chamber, a central resonant cavity arranged above the reaction chamber, a medium window arranged between the central resonant cavity and the reaction chamber, a microwave transmission mechanism used for transmitting microwaves to the central resonant cavity and a microwave source mechanism. The surface wave plasma processing equipment provided by the invention can improve the process uniformity.
Description
Technical Field
The invention relates to the technical field of plasma, in particular to surface wave plasma processing equipment.
Background
In recent years, surface wave plasma sources have been considered as the most promising plasma sources due to their low electron temperature and low damage relative to rf plasmas, and these incomparable advantages have made surface wave plasma sources a strong competitor for next generation lsi device processing.
The existing surface wave plasma processing equipment comprises a microwave source, a microwave transmission matching structure, a circular resonant cavity structure and a reaction chamber. Referring to fig. 1, the microwave source and microwave transmission matching structure includes a microwave source power supply 1, a microwave source 2, a resonator 3, a circulator 4, a load, a directional coupler 6, an impedance adjusting unit 7, a rectangular waveguide 8, and a coaxial converting unit 9. The circular resonant cavity structure comprises a cavity 11, a slow wave plate 12 filled in the cavity 11, a slot antenna 13 arranged at the bottom of the cavity 11, and a dielectric window 14 arranged below the slot antenna 13. The reaction chamber 16 is disposed below the dielectric window 14. The coaxial conversion unit 9 is used for feeding microwave energy into the cavity 11, the microwave energy is radiated downwards through a slit in the slot antenna 13 to propagate into the dielectric window 14, and generates plasma 15 after entering the reaction chamber 16, and surface waves are formed at the interface of the dielectric window 14 and the plasma.
However, the existing surface wave plasma processing apparatus inevitably has the following problems in practical use:
the surface wave propagates through the dielectric window 14 between the slot antenna 13 and the plasma 15, and the propagation direction propagates in a direction radiating from the center of the dielectric window 14 to the periphery, and when the surface wave reaches the outer peripheral boundary of the dielectric window 14, it will return back to the central region, specifically, the propagation direction is as indicated by an arrow in fig. 2. Since the dielectric window 14 can be regarded as a circular resonant cavity, the TM mode microwaves entering the dielectric window 14 are distributed concentrically, so that the surface waves will be reflected from all directions of the peripheral boundary of the dielectric window 14 to the central region, and finally the electric field of the surface waves in the central region is stronger, while the electric field from the edge region to the peripheral boundary is in a downward trend, the density distribution of the plasma in the radial direction of the dielectric window 14 is as shown in fig. 3, and the plasma density distribution shows a phenomenon that the center is stronger and the edge is weaker, thereby affecting the process uniformity.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art and to providing a surface wave plasma processing apparatus that can improve process uniformity.
The surface wave plasma processing equipment comprises a reaction chamber, a central resonant cavity arranged above the reaction chamber, a medium window arranged between the central resonant cavity and the reaction chamber, a microwave transmission mechanism used for transmitting microwaves to the central resonant cavity, a microwave source mechanism and an edge enhancement structure, wherein the edge enhancement structure is used for increasing the plasma density of the edge area of the medium window in the reaction chamber so as to compensate the difference between the edge area of the medium window corresponding to the plasma generated by the central resonant cavity and the central area of the medium window.
Optionally, the edge enhancement structure includes:
the annular resonant cavity is arranged around the central resonant cavity in a surrounding manner; the annular resonant cavity and the central resonant cavity respectively cover the edge region and the central region of the upper surface of the dielectric window;
the annular slit antenna is arranged between the lower surface of the annular resonant cavity and the upper surface of the dielectric window and is used for coupling microwave energy from the annular resonant cavity into the dielectric window;
the microwave transmission mechanism is used for transmitting microwaves to the central resonant cavity and the annular resonant cavity simultaneously.
Optionally, the edge-reinforcing structure includes:
the annular resonant cavity is arranged around the dielectric window in a surrounding mode;
the annular slit antenna is arranged between the inner peripheral surface of the annular resonant cavity and the outer peripheral surface of the dielectric window and is used for coupling the microwave energy from the annular resonant cavity into the dielectric window;
the central resonant cavity covers the whole upper surface of the dielectric window;
the microwave transmission mechanism is used for transmitting microwaves to the central resonant cavity and the annular resonant cavity simultaneously.
Optionally, the edge-reinforcing structure includes:
and the magnetic unit is arranged around the dielectric window and used for generating a magnetic field for attracting electrons in the plasma to move towards the edge area of the dielectric window.
Optionally, the microwave transmission mechanism includes a first waveguide, a power distribution unit, a coaxial structure unit, a second waveguide, a waveguide conversion unit, and a third waveguide, wherein,
the first waveguide is used for transmitting the microwaves provided by the microwave source mechanism to the power distribution unit;
the power distribution unit is used for distributing microwaves to the coaxial structure unit and the second waveguide according to a preset proportion;
the coaxial structure unit is used for transmitting microwaves into the central resonant cavity;
the second waveguide is used for transmitting microwaves to the waveguide conversion unit;
the waveguide conversion unit is used for converting the direction of the microwave to be consistent with the microwave conveying direction of the third waveguide, and transmitting the microwave to the third waveguide;
the third waveguide is used for transmitting microwaves to the ring-shaped resonant cavity.
Optionally, the ratio of the density of the plasma in the reaction chamber corresponding to the edge region of the dielectric window to the density of the plasma in the reaction chamber corresponding to the central region of the dielectric window is adjusted by setting different predetermined ratios.
Optionally, the annular slot antenna includes an annular plate and a plurality of first slots penetrating through the annular plate in a thickness direction of the annular plate;
the plurality of first slits is wound at least one turn in a circumferential direction of the annular plate.
Optionally, on the plane where the annular plate is located, the shape of the gap includes a rectangle, a circle, a T shape, an ellipse, or a cross.
Optionally, the central resonant cavity includes a cavity, a slow-wave plate is disposed in the cavity, and the cavity is filled with the slow-wave plate; and the bottom of the cavity is provided with a slit antenna for coupling microwave energy from the central resonant cavity into the dielectric window.
Optionally, the coaxial structural unit includes a vertical and coaxially disposed cylindrical ring body and a probe, wherein,
the probe penetrates through the top wall of the cavity and the slow wave plate and is in contact with the slit antenna.
Optionally, the slot antenna includes a circular plate and a plurality of second slots penetrating through the circular plate in a thickness direction of the circular plate;
the plurality of second gaps surround the circular plate for at least one circle along the circumferential direction of the circular plate, and the centers of the circumferences of the second gaps and the first gaps are concentrically arranged.
The invention has the following beneficial effects:
according to the surface wave plasma processing equipment provided by the invention, the edge enhancement structure is additionally arranged and is used for increasing the plasma density of the edge area of the corresponding dielectric window in the reaction chamber, and the difference between the edge area of the corresponding dielectric window and the central area of the corresponding dielectric window of the plasma generated by the central resonant cavity can be compensated, so that the density distribution uniformity of the plasma in the radial direction of the dielectric window can be improved, and the process uniformity can be further improved.
Drawings
Fig. 1 is a structural view of a conventional surface wave plasma processing apparatus;
FIG. 2 is a propagation pattern of a surface wave in a dielectric window;
FIG. 3 is a graph of prior art plasma density in the radial direction of a dielectric window;
fig. 4 is a structural view of a surface wave plasma processing apparatus provided in a first embodiment of the present invention;
FIG. 5 is a graph showing the density profile of plasma in the radial direction of a dielectric window in accordance with a first embodiment of the present invention;
fig. 6 is a structural view of a loop slot antenna employed in the first embodiment of the present invention;
fig. 7 is a structural diagram of a surface wave plasma processing apparatus according to a second embodiment of the present invention.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the surface wave plasma processing apparatus provided by the present invention will be described in detail below with reference to the accompanying drawings.
Referring to fig. 4, a surface wave plasma processing apparatus according to a first embodiment of the present invention includes a reaction chamber 16, a central resonant cavity 21 disposed above the reaction chamber 16, a dielectric window 14 disposed between the central resonant cavity 21 and the reaction chamber 16, a microwave transmission mechanism for transmitting microwaves to the central resonant cavity 21, and a microwave source mechanism. The microwave source mechanism specifically comprises a microwave power supply 1, a microwave source (magnetron) 2 and a resonant cavity 3, and is used for providing high-power microwaves. The microwave source mechanism further includes a circulator 4 and a load 5 for absorbing the reflected power, and a rectangular waveguide 6 and an impedance adjusting unit 7.
The surface wave plasma processing apparatus also includes an edge enhancement structure for increasing the plasma density in the reaction chamber 16 in the region corresponding to the edge of the dielectric window 14. Since the electric field of the surface wave generated in the reaction chamber 16 by the central resonator 21 is strong in the central region of the dielectric window 14 and the electric field from the edge region to the outer periphery tends to be downward, the plasma density distribution generated in the reaction chamber 16 by the central resonator 21 exhibits a phenomenon of strong center and weak edge. In order to solve the problem, the plasma density of the edge region of the corresponding dielectric window 14 in the reaction chamber 16 is increased by the edge enhancement structure, so that the difference between the edge region of the corresponding dielectric window 14 and the central region of the corresponding dielectric window 14 of the plasma generated by the central resonant cavity 21 can be compensated, the density distribution uniformity of the plasma 25 in the radial direction of the dielectric window 14 can be improved, and the process uniformity can be improved.
In this embodiment, the edge enhancement structure includes a ring resonator 29 and a ring slot antenna 30. Wherein the ring resonator 29 is disposed around the central resonator 21, and the ring resonator 29 and the central resonator 21 are isolated from each other by the sidewall of the central resonator 21. And, the ring resonator 29 and the central resonator 21 cover the edge region and the central region of the upper surface of the dielectric window 14, respectively; a circular slot antenna 30 is disposed between the lower surface of the ring resonator 29 and the upper surface of the dielectric window 14 for coupling microwave energy from the ring resonator 29 into the dielectric window 14.
In this embodiment, the ring resonator 29 is a cavity. However, the present invention is not limited to this, and in practical applications, the ring resonator 29 may be filled with a dielectric material, such as a slow-wave material.
In the present embodiment, as shown in fig. 6, the annular slot antenna 30 includes an annular plate 301 and a plurality of first slots 302 penetrating the annular plate 301 in the thickness direction of the annular plate 301; wherein a plurality of said first slits 302 encircle the annular plate 301 at least one turn in the circumferential direction. Microwave energy in the ring resonator 29 is fed into the dielectric window 14 through each of the first slots 302. Alternatively, the shape of the slit 302 on the plane of the annular plate 301 includes a rectangle, a circle, a T, an ellipse, a cross, or the like.
Fig. 5 is a graph showing the density profile of plasma in the radial direction of the dielectric window in the first embodiment of the present invention. As shown in fig. 5, curve a is a plasma density distribution curve generated in the reaction chamber 16 through the central resonant cavity 21, which exhibits a phenomenon of strong center and weak edge. Curve B is the plasma density distribution curve generated in the reaction chamber 16 by the ring resonator 29, which exhibits the phenomenon of weak center and strong edge. The curve C is a plasma density distribution curve obtained by mutually superimposing the electric fields generated by the ring resonator 29 and the central resonator 21, and the curve is more gentle in the radial direction of the dielectric window 14, so that the plasma density distribution generated by the ring resonator 29 can play a role in compensation, and the density distribution difference of the plasma generated by the central resonator 21 is compensated, so that the density distribution uniformity of the plasma 25 in the radial direction of the dielectric window 14 can be improved, and the process uniformity can be further improved.
The microwave transmission mechanism is used to transmit microwaves to the central resonant cavity 21 and the ring resonant cavity 29 simultaneously. In the present embodiment, the microwave transmission mechanism includes a first waveguide 8, a power distribution unit 9, a coaxial structure unit 10, a second waveguide 26, a waveguide conversion unit 27, and a third waveguide 28, wherein the first waveguide 8 is used for transmitting the microwaves provided by the microwave source mechanism to the power distribution unit 9; the power distribution unit 9 is used for distributing the microwaves to the coaxial structure unit 10 and the second waveguide 26 according to a predetermined proportion; the coaxial structure unit 10 is used for transmitting microwaves into the central resonant cavity 21; the second waveguide 26 is used to transmit microwaves to the waveguide conversion unit 27; the waveguide conversion unit 27 is configured to convert a direction of the microwave to be consistent with a microwave transmission direction of the third waveguide 28, and transmit the microwave to the third waveguide 28; the third waveguide 28 is used to transmit microwaves to the ring resonator 29.
Alternatively, the ratio of the density of the plasma in the reaction chamber 16 corresponding to the edge region of the dielectric window 14 to the density of the plasma in the reaction chamber corresponding to the center region of the dielectric window 14 can be adjusted by setting different predetermined ratios, so as to achieve the purpose of improving the uniformity of the density distribution of the surface wave plasma.
In the present embodiment, the second waveguide 26 is disposed horizontally; the third waveguide 28 is vertically disposed; the waveguide conversion unit 27 includes a horizontal waveguide and a vertical waveguide, wherein the second waveguide, the horizontal waveguide, the vertical waveguide, and the third waveguide are connected in sequence.
Alternatively, the second waveguide 26, the waveguide conversion unit 27, and the third waveguide 28 are all rectangular waveguides.
In the present embodiment, the central resonant cavity 21 includes a cavity, in which a slow-wave plate 22 is disposed, and the slow-wave plate 22 fills the cavity; and the bottom of the cavity is provided with a slot antenna 23 for coupling microwave energy from the central cavity 21 into the dielectric window 14. Specifically, the slot antenna 23 includes a circular plate and a plurality of second slots penetrating through the circular plate in a thickness direction of the circular plate; the plurality of second slits surrounds the circular plate at least one turn in a circumferential direction thereof, and a center of a circumference in which the second slits are located is concentrically arranged with a center of a circumference in which the first slits 302 are located. Thus, the electric fields generated by the ring resonator 29 and the central resonator 21 are concentrically distributed, thereby making it possible to provide angular uniformity of the plasma density in the reaction chamber 16.
In the present embodiment, the coaxial structure unit 10 includes a vertical and coaxial cylindrical ring and a probe, wherein the probe penetrates through the top wall of the cavity of the central resonant cavity 21 and the slow wave plate 22 and contacts the slot antenna 23. The coaxial structure unit 10 serves to convert TE waves propagating through the rectangular waveguide into waves of TEM mode, thereby feeding microwave energy into the central resonant cavity 21.
In practical applications, the ratio of the density of the plasma in the reaction chamber 16 in the edge region of the corresponding dielectric window 14 to the density of the plasma in the center region of the corresponding dielectric window 14 can be adjusted by adjusting the coupling efficiency of the ring resonator 29 and the center resonator 21, respectively, so as to achieve the purpose of improving the uniformity of the surface wave plasma density distribution. Specifically, the method for adjusting the coupling efficiency comprises the following steps: optimizing the material and thickness of the slow wave plate 22 of the central resonant cavity 21 and the size and structure of the slot antenna 23; optimizing the size and structure of the annular slot antenna 30; the area ratio of the central resonant cavity 21 and the ring resonant cavity 29 is adjusted, and the like.
Referring to fig. 6, a second embodiment of a surface wave plasma processing apparatus according to the present invention is different from the first embodiment only in that: the edge enhancement structure is different.
Specifically, in the present embodiment, the edge enhancement structure includes a ring resonator 31 and a ring slot antenna 32, wherein the ring resonator 31 is disposed around the dielectric window 34; the annular slot antenna 32 is disposed between the inner circumferential surface of the annular resonant cavity 31 and the outer circumferential surface of the dielectric window 14 for coupling the microwave energy from the annular resonant cavity 32 into the dielectric window 14. And, the central resonant cavity 31 covers the entire upper surface of the dielectric window 14 and couples the microwave energy into the dielectric window 14 through the slot antenna 33 provided at the bottom thereof; the microwave transmission mechanism is used to transmit microwaves to the central resonant cavity 21 and the ring resonant cavity 31 at the same time.
Other structures and functions of the surface wave plasma processing apparatus according to the second embodiment of the present invention are the same as those of the first embodiment, and are not described herein again.
A surface wave plasma processing apparatus according to a third embodiment of the present invention is different from the first and second embodiments only in that: the edge enhancement structure is different.
Specifically, the edge enhancement structure includes a magnetic unit circumferentially disposed about the dielectric window for generating a magnetic field that attracts electrons in the plasma toward an edge region of the dielectric window. The magnetic unit can increase the plasma density in the reaction chamber 16 corresponding to the edge region of the dielectric window 14, and simultaneously reduce the plasma density in the reaction chamber 16 corresponding to the central region of the dielectric window 14, so that the density distribution uniformity of the plasma 25 in the radial direction of the dielectric window 14 can be improved, and the process uniformity can be further improved.
In practice, the magnet unit may comprise a permanent magnet or an electromagnet capable of generating a magnetic field.
In summary, the surface wave plasma processing apparatus provided in the above embodiments of the present invention is configured to increase the plasma density in the edge region of the corresponding dielectric window in the reaction chamber by adding the edge enhancement structure, and can compensate the difference between the edge region of the corresponding dielectric window and the central region of the corresponding dielectric window of the plasma generated by the central resonant cavity, so as to improve the density distribution uniformity of the plasma in the radial direction of the dielectric window, and further improve the process uniformity.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (8)
1. Surface wave plasma processing apparatus comprising a reaction chamber, a central resonant cavity disposed above the reaction chamber, a dielectric window disposed between the central resonant cavity and the reaction chamber, a microwave transmission mechanism for transmitting microwaves to the central resonant cavity, and a microwave source mechanism, characterized by further comprising an edge enhancement structure for increasing a plasma density in the reaction chamber corresponding to an edge region of the dielectric window to compensate for a difference between a plasma generated by the central resonant cavity corresponding to the edge region of the dielectric window and corresponding to a central region of the dielectric window;
the edge reinforcement structure includes:
the annular resonant cavity is arranged around the central resonant cavity in a surrounding mode; the annular resonant cavity and the central resonant cavity respectively cover the edge region and the central region of the upper surface of the dielectric window;
the annular slit antenna is arranged between the lower surface of the annular resonant cavity and the upper surface of the dielectric window and is used for coupling microwave energy from the annular resonant cavity into the dielectric window;
the microwave transmission mechanism is used for transmitting microwaves to the central resonant cavity and the annular resonant cavity simultaneously;
alternatively, the edge enhancement structure comprises:
the annular resonant cavity is arranged around the dielectric window in a surrounding mode;
the annular slit antenna is arranged between the inner peripheral surface of the annular resonant cavity and the outer peripheral surface of the dielectric window and is used for coupling the microwave energy from the annular resonant cavity into the dielectric window;
the central resonant cavity covers the whole upper surface of the dielectric window;
the microwave transmission mechanism is used for transmitting microwaves to the central resonant cavity and the annular resonant cavity simultaneously.
2. The surface wave plasma processing apparatus of claim 1, wherein the edge enhancement structure comprises:
the annular resonant cavity is arranged around the central resonant cavity in a surrounding manner; the annular resonant cavity and the central resonant cavity respectively cover the edge region and the central region of the upper surface of the dielectric window;
the annular slit antenna is arranged between the lower surface of the annular resonant cavity and the upper surface of the dielectric window and is used for coupling microwave energy from the annular resonant cavity into the dielectric window;
the microwave transmission mechanism is used for transmitting microwaves to the central resonant cavity and the annular resonant cavity simultaneously;
alternatively, the edge enhancement structure comprises:
the annular resonant cavity is arranged around the dielectric window in a surrounding mode;
the annular slit antenna is arranged between the inner peripheral surface of the annular resonant cavity and the outer peripheral surface of the dielectric window and is used for coupling the microwave energy from the annular resonant cavity into the dielectric window;
the central resonant cavity covers the whole upper surface of the dielectric window;
the microwave transmission mechanism is used for transmitting microwaves to the central resonant cavity and the annular resonant cavity simultaneously;
the microwave transmission mechanism comprises a first waveguide, a power distribution unit, a coaxial structure unit, a second waveguide, a waveguide conversion unit and a third waveguide, wherein,
the first waveguide is used for transmitting the microwaves provided by the microwave source mechanism to the power distribution unit;
the power distribution unit is used for distributing microwaves to the coaxial structure unit and the second waveguide according to a preset proportion;
the coaxial structure unit is used for transmitting microwaves into the central resonant cavity;
the second waveguide is used for transmitting microwaves to the waveguide conversion unit;
the waveguide conversion unit is used for converting the direction of the microwave to be consistent with the microwave conveying direction of the third waveguide, and transmitting the microwave to the third waveguide;
the third waveguide is used for transmitting microwaves to the ring-shaped resonant cavity.
3. A surface wave plasma processing apparatus as recited in claim 2, wherein the ratio of the density of the plasma in said reaction chamber corresponding to the edge region of said dielectric window to the density corresponding to the center region of said dielectric window is adjusted by setting different said predetermined ratios.
4. The surface wave plasma processing apparatus of claim 1, wherein the edge enhancement structure comprises:
the annular resonant cavity is arranged around the central resonant cavity in a surrounding manner; the ring-shaped resonant cavity and the central resonant cavity respectively cover the edge region and the central region of the upper surface of the dielectric window;
the annular slit antenna is arranged between the lower surface of the annular resonant cavity and the upper surface of the dielectric window and is used for coupling microwave energy from the annular resonant cavity into the dielectric window;
the microwave transmission mechanism is used for transmitting microwaves to the central resonant cavity and the annular resonant cavity simultaneously;
alternatively, the edge enhancement structure comprises:
the annular resonant cavity is arranged around the dielectric window in a surrounding mode;
the annular slit antenna is arranged between the inner peripheral surface of the annular resonant cavity and the outer peripheral surface of the dielectric window and is used for coupling microwave energy from the annular resonant cavity into the dielectric window;
the central resonant cavity covers the whole upper surface of the dielectric window;
the microwave transmission mechanism is used for transmitting microwaves to the central resonant cavity and the annular resonant cavity simultaneously;
the annular slit antenna comprises an annular plate and a plurality of first gaps penetrating through the annular plate along the thickness direction of the annular plate;
the plurality of first slits surrounds at least one turn in the circumferential direction of the annular plate.
5. A surface wave plasma processing apparatus as recited in claim 4, wherein the shape of said slot includes a rectangle, circle, T-shape, oval or cross shape in the plane of said annular plate.
6. The surface wave plasma processing apparatus of claim 2, wherein the edge enhancement structure comprises:
the annular resonant cavity is arranged around the dielectric window in a surrounding mode;
the annular slit antenna is arranged between the inner peripheral surface of the annular resonant cavity and the outer peripheral surface of the dielectric window and is used for coupling microwave energy from the annular resonant cavity into the dielectric window; the annular slit antenna comprises an annular plate and a plurality of first gaps penetrating through the annular plate along the thickness direction of the annular plate; the plurality of first slits encircle at least one circle along the circumferential direction of the annular plate;
the central resonant cavity covers the whole upper surface of the dielectric window;
the microwave transmission mechanism is used for transmitting microwaves to the central resonant cavity and the annular resonant cavity simultaneously;
the central resonant cavity comprises a cavity, a slow wave plate is arranged in the cavity, and the cavity is filled with the slow wave plate; and the bottom of the cavity is provided with a slit antenna for coupling microwave energy from the central resonant cavity into the dielectric window.
7. The surface wave plasma processing apparatus of claim 6, wherein the microwave transmission mechanism further comprises a coaxial structure unit comprising a cylindrical ring and a probe that are vertically and coaxially disposed, wherein,
the probe penetrates through the top wall of the cavity and the slow wave plate and is in contact with the slit antenna.
8. The surface wave plasma processing apparatus as claimed in claim 6, wherein said slit antenna comprises a circular plate and a plurality of second slits penetrating through said circular plate in a thickness direction of said circular plate;
the plurality of second gaps surround the circular plate for at least one circle along the circumferential direction of the circular plate, and the centers of the circumferences of the second gaps and the first gaps are concentrically arranged.
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| CN103854945A (en) * | 2012-12-05 | 2014-06-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma equipment and reaction chamber thereof |
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| JP4441038B2 (en) * | 2000-02-07 | 2010-03-31 | 東京エレクトロン株式会社 | Microwave plasma processing equipment |
| KR100988085B1 (en) * | 2003-06-24 | 2010-10-18 | 삼성전자주식회사 | High density plasma processing apparatus |
| CN105430862A (en) * | 2014-09-23 | 2016-03-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Surface-wave plasma equipment |
| CN107731646B (en) * | 2016-08-12 | 2019-08-23 | 北京北方华创微电子装备有限公司 | Surface wave plasma process equipment |
| CN107155256A (en) * | 2016-03-03 | 2017-09-12 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A kind of surface wave plasma device |
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| CN101582322A (en) * | 2008-05-12 | 2009-11-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupling coil and plasma processing device adopting same |
| CN103854945A (en) * | 2012-12-05 | 2014-06-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma equipment and reaction chamber thereof |
| CN104099613A (en) * | 2013-04-03 | 2014-10-15 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction cavity and plasma processing equipment |
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