CN107155256A - A kind of surface wave plasma device - Google Patents

A kind of surface wave plasma device Download PDF

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Publication number
CN107155256A
CN107155256A CN201610121051.9A CN201610121051A CN107155256A CN 107155256 A CN107155256 A CN 107155256A CN 201610121051 A CN201610121051 A CN 201610121051A CN 107155256 A CN107155256 A CN 107155256A
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CN
China
Prior art keywords
resonator
quartz
surface wave
quartz window
wave plasma
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610121051.9A
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Chinese (zh)
Inventor
昌锡江
区琼荣
韦刚
黄亚辉
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Beijing NMC Co Ltd
Beijing North Microelectronics Co Ltd
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Beijing North Microelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing North Microelectronics Co Ltd filed Critical Beijing North Microelectronics Co Ltd
Priority to CN202410115468.9A priority Critical patent/CN117794040A/en
Priority to CN201610121051.9A priority patent/CN107155256A/en
Priority to TW105140381A priority patent/TWI612853B/en
Priority to JP2018546492A priority patent/JP6718972B2/en
Priority to SG11201807555UA priority patent/SG11201807555UA/en
Priority to KR1020187028111A priority patent/KR102097436B1/en
Priority to PCT/CN2016/112597 priority patent/WO2017148208A1/en
Publication of CN107155256A publication Critical patent/CN107155256A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges
    • H05H1/4615—Microwave discharges using surface waves

Abstract

The present invention provides a kind of surface wave plasma device, resonator and rectangular waveguide are connected using connecting cavity, screw probe is stretched into intra resonant cavity via rectangular waveguide and connecting cavity, so as to by microwave energy feed-in connecting cavity resonant cavity, multiple quartz windows are set by the bottom wall in resonator, enable the electric field of standing wave that microwave formed in resonator to be coupled into vacuum chamber by each quartz window, and excite in vacuum chamber plasma；Multiple quartz windows can be equivalent to multiple plasma sources, for existing single plasma source, can homogenize plasma large area in vacuum chamber, so as to meet large-sized chip process requirements.

Description

A kind of surface wave plasma device
Technical field
The present invention relates to semiconductor equipment manufacturing technology field, and in particular to a kind of surface wave Plasma device.
Background technology
In recent years, with the high speed development of electronic technology, people are total to integrated circuit requirement Body trend is intended to Highgrade integration and more large area, and this requires to produce integrated circuit Enterprise improve constantly semiconductor wafer working ability.Plasma device is in integrated electricity Road (IC) or MEMS (Micro-Electro-Mechanical System, micro-electro-mechanical systems System) device manufacturing process in do not replace, therefore, high performance plasmas hair The research and development of generating apparatus are most important for the development of semiconductor fabrication process.Work as plasma When equipment is used for semiconductor fabrication process, main investigation factor is：In certain air pressure model Enclosing can the efficient generation uniform plasma of large area.Specific to process detail, close Note point is often in process gas and air pressure, plasma uniformity coefficient and plasma Particle components are the controllability of plasma., can be low corresponding to the development of electronics industry Large area is excited under air pressure, the plasma source of high density homogeneous plasma is current Main direction of studying.
In traditional semiconductor manufacturing industry, various types of plasma apparatus extensively should For various techniques, for example, capacitance coupling plasma (CCP) type, inductive etc. Gas ions (ICP) type and surface wave (SWP) or Ecr plasma (ECR) type such as.Surface wave plasma is novel plasma developed in recent years Generation technique, it is simpler in its structure compared to inductively coupled plasma, and There is very important advantage in homogeneous plasma large area.Due to surface Wave heating Mechanism, microwave energy is constrained on the border of plasma and medium, actually makes Plasma is the remote plasma influenceed without driving source, therefore compared to electricity Hold coupled plasma and inductively coupled plasma, its electron temperature is lower, so as to subtract The plasma damage to device surface that high energy electron is brought is lacked.Surface wave refers to, Using microwave inspired near dielectric surface grade more than higher than surface wave critical density from Daughter, microwave in dielectric surface heating region along the rapid decay in normal direction, and Medium on plasma boundary with forming the ripple transmitted along surface.Surface wave is transmitted at it In the range of can form periodic highfield, so as to maintain highdensity plasma, this That is the formation basic theory of surface wave plasma.
The mode of excitation of current wide area surface ripple plasma has a variety of, including in pipe Wall surface ripple, slot antenna plane surface ripple, radially slotted antenna surface ripple (Radio Slot Line Antenna, RSLA) etc..Wherein commercial main use round tube inner wall surface wave swashs Originating party formula and radially slotted antenna surface ripple mode of excitation, and large area plasma is sharp Hair is main to use RSLA mode of excitation.
As shown in Figure 1a, existing RSLA surface wave plasmas device includes：Microwave Source and microwave transmission mating structure, three parts of surface-wave antenna structure and chamber, wherein, Microwave source and microwave transmission mating structure include：Microwave source power supply 1, microwave source 2, Resonator 3, circulator 4, the load 5 for absorbing reflection power, for measuring incidence Power and the directional coupler of reflection power 6, impedance adjustment unit 7 and rectangular waveguide 8. Surface-wave antenna position includes：Antenna body 11, slow-wave plate 12, aperture plate 15 and Jie Scutum 16.Wherein, antenna body 11 is in cylinder, usually the metal such as aluminium, stainless steel Material；Aperture plate 15 is the antenna plate of slotting structure, mostly the metal material such as aluminium, stainless steel Material.As shown in Figure 1 b, T-shaped gap is along the circumferential direction for the plan structure of aperture plate 15 It is uniformly distributed from inside to outside.Slow-wave plate 12 is in the form of annular discs, is low-loss dielectric-slab, its Medium can be Al2O3, SiO2Or SiN (silicon-nitrogen compound), microwave energy passes through stagnant Wavelength is compressed after ripple plate 12, so that microwave produces circular polarization in aperture plate 15, The ripple of circular polarization excites generation plasma by dielectric-slab 16 in vacuum chamber 19, Dielectric-slab 16 is usually quartz.Chamber includes：Cavity 18, for the and of seal cavity 18 The sealing ring 17 of antenna body 11 and the supporting table 21 for placing chip 20.
There is following technological deficiency in existing RSLA surface wave plasmas device：
1st, existing RSLA surface wave plasmas device uses slit slot antenna mode Microwave feed-in is realized, the aperture plate 15 of centrosymmetric structure ensure that plasma radial is equal Even property, still, microwave coaxial feed-in are transmitted in the region of slow-wave plate 12 in divergent shape, Prolong radial decay, cause Energy distribution uneven, constrain the area of heating region. For example, the RSLA surface wave plasmas of the microwave feed-in mode using slit slot antenna The current maximum of plasma uniform radius that body device is produced can only be to a diameter of 8 cun of chips It is processed, it is impossible to realize and a diameter of 12 cun of industrial rank chip is processed.
2nd, it is necessary to using relatively low electric discharge air pressure, such as in some chip processing technologys The electric discharge air pressure of millitorr (mTorr) magnitude, if however, electric discharge air pressure it is too low, pass through The electric field that slit slot antenna structure is produced can not discharge, and lead to not smoothly form gas Initial ionization.
The content of the invention
There is provided a kind of surface wave etc. for above shortcomings in the prior art by the present invention Ion body device, to solve the problem of surface wave plasma large-area uniformity is poor.
The present invention is in order to solve the above technical problems, adopt the following technical scheme that：
The present invention provides a kind of surface wave plasma device, including：For producing microwave Microwave generating apparatus, microwave transmission mating structure and vacuum chamber, the microwave transmission Mating structure includes rectangular waveguide, for transmitting the microwave that the microwave generating apparatus is produced, Characterized in that, described device also includes：Connecting cavity, resonator and screw probe, institute State the top that connecting cavity connects the rectangular waveguide and the resonator, the screw probe The rectangular waveguide and connecting cavity are sequentially passed through, and stretches into the inside of the resonator；
The bottom wall of the resonator is provided with multiple quartz windows, and with the vacuum chamber It is connected and seals.
It is preferred that, circumference of the quartz window along the vacuum chamber is uniformly distributed.
It is preferred that, the circle that the quartz window is coaxially disposed by least two and diameter is different Cylindricality quartz piece constitute, and the quartz piece diameter along the quartz window from top to bottom Successively decrease.
It is preferred that, the minimum diameter of the quartz piece is 40mm-120mm.
It is preferred that, the minimum diameter of the quartz piece is 60mm.
It is preferred that, the bottom wall of the resonator is provided with through hole, the position of the through hole with The quartz window is corresponded, and the shape of the through hole is matched with the quartz window, The quartz window is arranged in the through hole, and is fixedly connected between the through hole.
It is preferred that, the quartz window and the through hole are enclosed by O and sealed.
Further, the surface wave plasma device also includes the spy of at least one metal Pin, the metal probe is arranged on the roof of resonator, for changing in resonator Electric Field Distribution, strengthens the electric field around the metal probe.
It is preferred that, the position of the metal probe is corresponding with the quartz window, and institute Projection and the corresponding quartz window for stating metal probe vertical direction are coaxial.
It is preferred that, edge and stone that the metal probe is projected in the upper surface of quartz window The distance between edge of upper surface of English window is more than or equal to 2cm.
Further, described device also includes short-circuit plunger, and the short-circuit plunger is arranged on The terminal of the rectangular waveguide, by adjusting the short-circuit plunger on the rectangular waveguide Position, the length of the effective path of the rectangular waveguide can be adjusted.
It is preferred that, the height of the resonator is 10mm-85mm.
The present invention can realize following beneficial effect：
1st, resonator and rectangular waveguide are connected using connecting cavity, by screw probe via rectangle Waveguide and connecting cavity stretch into intra resonant cavity, so that microwave energy feed-in connecting cavity is harmonious Shake chamber, sets multiple quartz windows by the bottom wall in resonator so that microwave is in resonance The electric field of the standing wave of intracavitary formation can be coupled into vacuum chamber by each quartz window, And plasma is excited in vacuum chamber；Multiple quartz windows can be equivalent to multiple etc. Plasma source, for existing single plasma source, can make vacuum chamber Interior plasma large area homogenization, so as to meet large-sized chip process requirements.
2nd, by changing the external diameter of screw probe and the internal diameter size of connecting cavity, it can adjust The maximum transmission power of microwave；Also, stretched into by adjusting screw probe in resonator Length, can improve microwave feed-in efficiency.
3rd, by setting metal probe in resonator, thus it is possible to vary intra resonant cavity is original Electric Field Distribution, enhancing internal field (being formed about highfield in metal probe), carry Electric-field intensity near high metal probe, it is easier to realized under low air pressure condition to gas Initial ionization, so as to realize that surface wave plasma device works under low discharge air pressure.
4th, short-circuit plunger is set in the terminal of rectangular waveguide, by adjusting short-circuit plunger in square Position in shape waveguide becomes the length of the effective path of rectangular waveguide, realizes that microwave energy exists Redistributed inside rectangular waveguide resonant cavity, so that by the microwave energy in feed-in resonator Amount homogenization, making multiple quartz windows, nearby electric-field intensity is consistent, so that in vacuum chamber Consistent initial ionization is formed, the homogenization of plasma in process is finally reached.
Brief description of the drawings
Fig. 1 a are the structural representation of existing surface wave plasma device；
Fig. 1 b are the structural representation of existing surface-wave antenna aperture plate；
Fig. 2 is the structural representation of surface wave plasma device provided in an embodiment of the present invention Figure；
Fig. 3 is the top view of resonator provided in an embodiment of the present invention；
Fig. 4 is the structural representation of the bottom of resonator provided in an embodiment of the present invention；
Fig. 5 is that the installation of the bottom of quartz curette provided in an embodiment of the present invention and resonator is shown It is intended to.
Marginal data：
1st, microwave source power supply 2, microwave source 3, resonator
4th, circulator 5, load 6, directional coupler
7th, impedance adjustment unit 8, rectangular waveguide 9, short-circuit plunger
10th, connecting cavity 11, antenna body 12, slow-wave plate
15th, aperture plate 16, dielectric-slab 17, sealing ring, O circles
18th, cavity 19, vacuum chamber 20, chip
21st, supporting table 22, resonator 23, screw probe
24th, quartz window 26, through hole 27, metal probe
241st, the first quartz piece 242, the second quartz piece 261, countersunk head bore
262nd, hole
Embodiment
Below in conjunction with the accompanying drawing in the present invention, the technical scheme in the present invention is carried out clear Chu, complete description, it is clear that described embodiment is the part implementation of the present invention Example, rather than whole embodiments.Based on the embodiment in the present invention, this area is common The every other implementation that technical staff is obtained on the premise of creative work is not made Example, belongs to the scope of protection of the invention.
Below in conjunction with Fig. 2-5, technical scheme is described in detail.
As shown in Fig. 2 the present invention provides a kind of surface wave plasma device, the surface Ripple plasma device includes：Microwave generating apparatus, microwave transmission mating structure and vacuum Chamber 19.Wherein, microwave generating apparatus is used to produce microwave, including：Microwave source is powered Power supply 1, the resonator 3 of microwave source 2, microwave source power supply 1 are that microwave source 2 is powered, Microwave source 2 can select magnetron, and resonator 3 is connected with microwave source 2.Microwave transmission Mating structure includes：Circulator 4, the load 5 for absorbing reflection power, for measuring Directional coupler 6, impedance adjustment unit 7 and the rectangular waveguide of incident power and reflection power 8, circulator 4, directional coupler 6, impedance adjustment unit 7 and rectangular waveguide 8 are successively Connection, load 5 is connected with circulator 4.The microwave energy warp that microwave generating apparatus is produced Transmitted by circulator 4, directional coupler 6 and rectangular waveguide 8, impedance adjustment unit 7 Mode of resonance for adjusting microwave.The horizontal positioned of rectangular waveguide 8, rectangular waveguide 8 Initiating terminal is connected with impedance adjustment unit 7, and the terminal of rectangular waveguide 8 is free end.
Rectangular waveguide 8 is standard component, and the corresponding rectangular waveguide model of 2450MHz microwaves has： BJ-22, BB-22, BJ-26, the cross sectional dimensions of the rectangular waveguide of various models are different, The embodiment of the present invention selects the rectangular waveguide of GB BJ-26 models.
The surface wave plasma device also includes：Connecting cavity 10, the and of resonator 22 Screw probe 23, connecting cavity 10 connects the top of the resonant cavity 22 of rectangular waveguide 8.Tool Body, the lower surface in the center section of rectangular waveguide 8 opens up the internal diameter chi with connecting cavity 10 Very little identical through hole, connecting cavity 10 is connected with rectangular waveguide 8 by the through hole.Screw Probe 23 sequentially passes through rectangular waveguide 8 and connecting cavity 10, and stretches into the interior of resonator 22 Portion, can be by the resonant cavity 22 of microwave energy feed-in connecting cavity 10 in rectangular waveguide 8. Specifically, screw probe 23 is extended radially through from the top of the middle part of rectangular waveguide 8 Rectangular waveguide 8 enters connecting cavity 10, and is passed from connecting cavity 10, stretches into resonator In 22.In rectangular waveguide 8, microwave energy is from the initiating terminal of rectangular waveguide 8 to terminal Direction is transmitted, and when being transferred to the middle part of rectangular waveguide 8, screw probe 23 changes The feed-in direction of microwave energy, wherein, a part of microwave energy continues to rectangular waveguide 8 The transmission of terminal direction, another part microwave energy is transferred into downwards connecting cavity 10, and Enter resonator 22 via connecting cavity 10.
It should be noted that external diameter and connecting cavity 10 by changing screw probe 23 Internal diameter size, can adjust the transimission power of microwave, so as to reach that microwave maximum transmitted is imitated Rate；The length stretched into by adjusting screw probe 23 in resonator 22, can adjust electricity Field feed-in efficiency, improves microwave utilization rate.Specifically, external diameter and the company of screw probe 23 The ratio for connecing the internal diameter of chamber 10 determines maximum transmission power, and the ratio can be according to coaxial The transmission characteristic of waveguide, is calculated by the breakdown voltage of air under the structure.Generally, should Ratio value takes 1.65~3.59, and maximum transmission power and minimal losses have been corresponded to respectively.Screw Length that probe 23 is stretched into resonator 22 and electric field feed-in efficiency not linear relationship, The structure for integrating whole resonator 22 is needed (for example, the height of resonator, quartz window Quantity and distribution etc.), optimal microwave utilization ratio could be determined.
The bottom wall of resonator 22 is connected and sealed with vacuum chamber 19, and resonator 22 Bottom wall is provided with multiple quartz windows 24, and quartz window 24 is used to microwave energy being coupled into Enter vacuum cavity 19 to produce plasma, while forming the boundary condition of surface wave. That is, vacuum chamber 19 is arranged on the lower section of resonator 22, and microwave is in resonator 22 Interior formation standing wave, the electric field of standing wave is coupled into vacuum chamber 19 by quartz window 24, Excite plasma in vacuum chamber 19, and be more than in the density of plasma and form table During the critical density of face ripple plasma, in the lower surface formation surface wave of quartz window 24.
Resonator 22 is generally made of stainless steel and other metal materials, and vacuum chamber 19 leads to Frequently with aluminium alloy, stainless steel and other metal materials are made, and use is provided with vacuum chamber 19 In the supporting table 21 for placing chip.
The present invention connects resonator and rectangular waveguide using connecting cavity, by screw probe via Rectangular waveguide and connecting cavity stretch into intra resonant cavity, so that by microwave energy feed-in connecting cavity Resonant cavity, sets multiple quartz windows so that microwave exists by the bottom wall in resonator The electric field of the standing wave formed in resonator can be coupled into vacuum chamber by each quartz window Room, and plasma is excited in vacuum chamber, therefore, multiple quartz windows can be waited Imitate as multiple plasma sources, can be with for existing single plasma source Homogenize the large area of vacuum chamber chamber piasma, so as to meet large-sized chip Process requirements.
In embodiments of the present invention, resonator 22 can be built by multiple metal derbies, Therefore, the height of resonator 22 can be adjusted as needed, it is preferred that resonator Height can be 10mm-85mm.
As shown in figure 3, circumference of each quartz window 24 along vacuum chamber 19 is uniformly distributed, So that multiple plasma sources are spatially symmetrical in vacuum chamber 19, thus realize etc. from Daughter large-area uniformity.
In embodiments of the present invention, 6 quartz windows, 24,6 quartz windows 24 are set Form a circle., can be many by quartz window in order to improve edge plasma density Layer distribution (forming multiple concentric circles), for example, using 6 quartz windows 24 in Layer, is further added by multiple quartz windows, the quartz window newly increased on the outside of 6 quartz windows Mouth is also uniformly distributed along the circumference of vacuum chamber 19.
The cylindrical quartz that quartz window 24 is coaxially disposed by least two and diameter is different Part is constituted, and the diameter of each quartz piece from top to bottom successively decreases along quartz window 24.
Through hole 26, position and each quartz of each through hole 26 are offered on the bottom wall of resonator Window 24 is corresponded, and the shape of through hole 26 is matched with quartz window 24, quartz window Mouth 24 is arranged in through hole 26, and is fixedly connected between through hole 26.
The installation of quartz window 24 is installed for convenience, in embodiments of the present invention, such as schemed Shown in 5, quartz window 24 by the first quartz piece 241 and the second quartz piece 242 the two Quartz piece is constituted, and the second quartz piece 242 and the first quartz piece 241 are coaxially disposed and bottom It is connected, so as to form " convex " font, the diameter of the first quartz piece 241 is more than the second stone The diameter of English part 242.Through hole 26 is counter sink, and counter sink includes the countersunk seat of cylinder Hole 261 and the hole 262 being connected with countersunk head bore.First quartz piece 241 is arranged on countersunk seat In hole 261, the second quartz piece 242 is arranged in hole 262, the first quartz piece 241 Height is identical with the depth of countersunk head bore 261, height and the hole 262 of the second quartz piece 242 Depth it is identical, therefore, when quartz window 24 is installed in counter sink, first quartz The upper surface of part 241 maintains an equal level with the bottom wall of resonator 22.
It is preferred that, the minimum diameter of the quartz piece of quartz window 24 is 40mm-120mm.
Because the first quartz piece 241 and countersunk head bore 261 coordinate, quartz window 24 it is effective Size is the size of the diameter of the second quartz piece, and the size is effective plasma Size.That is, in embodiments of the present invention, the diameter of the second quartz piece 242 can Think 40mm-120mm, it is preferred that a diameter of 60mm of the second quartz piece.First The diameter of quartz piece 241 can be 90mm.
It should be noted that the shape of through hole and quartz window on the bottom wall of resonator is not It is limited to above-mentioned shape, the scheme shown in Fig. 5 is one of which preferred embodiment, example Such as, the through hole on the bottom wall of resonator can be common clear opening, and quartz window can be with For the cylindrical quartz part matched with the clear opening size.
With reference to Fig. 2 and 5, quartz window 24 and through hole 26 can be sealed by O circles 17. Specifically, as shown in figure 5, the lower surface of countersunk head bore 261 offers annular groove, O Circle 17 is arranged in annular groove.When quartz window 24 is arranged in through hole 26, In the presence of atmospheric pressure, the lower surface of the first quartz piece 241 can become the extruding of O circles 17 Shape, the gap between the first quartz piece 241 of filling and countersunk head bore 261, so as to realize Sealing between resonator 22 and vacuum chamber 19.
Further, as shown in Fig. 2 the surface wave plasma device can also be wrapped At least one metal probe 27 is included, metal probe 27 is arranged on the roof of resonator 22, I.e. metal probe 27 is vertically arranged at the inside of resonator 22.Specifically, metal probe A kind of 27 set-up mode is：It is arranged between the roof of resonator 22 and bottom wall, and with Roof and the bottom wall connection of resonator 22；Another set-up mode of metal probe 27 is： It is arranged between the roof of resonator 22 and quartz window 24, one end of metal probe 27 It is connected with the roof of resonator 22, the upper surface phase that the other end can be with quartz window 24 Contact, but quartz window 24 can not be extruded, it is to avoid it is quartzy in plasma process is excited The temperature of window 24 is raised, and causes quartz window 24 to crush.
By setting metal probe in resonator, thus it is possible to vary intra resonant cavity is original Electric Field Distribution, enhancing internal field (being formed about highfield in metal probe), enhancing Electric-field intensity around metal probe, it is easier to realized under low air pressure condition to gas Initial ionization, so as to realize that surface wave plasma device works under low discharge air pressure.
When metal probe 27 is one, the position of the metal probe 27 and a quartz Window 24 is corresponding, and projection and the corresponding quartz of the vertical direction of metal probe 27 Window 24 is coaxial.
Metal probe 27 can also set multiple, now, the quantity of metal probe 27 and Position can be determined according to the size, height, shape of resonator 22.In present invention implementation In example, as shown in figure 3, the quantity of metal probe 27 and the quantity phase of quartz window 24 Together, be 6, and the vertical direction of each metal probe 27 projection respectively with corresponding stone English window 24 is coaxial.It should be noted that when metal probe 27 is multiple, metal Probe 27 can also be located on the roof of the resonator between each quartz window 24.
When metal probe 27 is present in 22 inside of resonator, electric field is had perpendicular to metal Surface and magnetic field parallel to metal surface boundary condition, so as to change original field distribution, Therefore, the electric field near metal probe 27 can strengthen.In order to avoid air under high power Puncture, as shown in Fig. 2 projection and corresponding quartz when the vertical direction of metal probe 27 When window 24 is coaxial, the edge that metal probe 27 is projected in the upper surface of quartz window 24 Can not be too small with the distance between the edge of upper surface of quartz window w, it is preferred that w More than or equal to 2cm.
Further, in order to avoid point discharge, can also quartz window 24 upper table Face edge sets chamfering.
Further, as shown in Fig. 2 the surface wave plasma device can also be wrapped Short-circuit plunger 9 is included, short-circuit plunger 9 is arranged on the terminal of rectangular waveguide 8, short-circuit plunger 9 Position on rectangular waveguide 8 can be adjusted, by adjusting short-circuit plunger 9 in square wave The position on 8 is led, so as to adjust the length of the effective path of rectangular waveguide.
Position of the short-circuit plunger 9 on rectangular waveguide 8 determines the terminal of rectangular waveguide 8 The length of side, the microwave energy transmitted to the terminal direction of rectangular waveguide 8 is via short circuit Piston 9 reflects, and the microwave energy of a portion reflection is via impedance adjustment unit 7, fixed Transmit to load 5, and absorbed by load 5, another part to coupler 6, circulator 4 The microwave energy of reflection by the feed-in connecting cavity 10 of screw probe 23 right part and resonance The right part of chamber 22.The resonant cavity 22 of connecting cavity 10 is divided into by screw probe 23 Left and right two parts, screw probe 23 is by from the initiating terminal of rectangular waveguide 8 to terminal direction The left side of the left part resonant cavity 22 of the microwave energy feed-in connecting cavity 10 of transmission Point.Therefore, by adjusting position of the short-circuit plunger 9 on rectangular waveguide 8, Ke Yijun Weigh the left and right two-part microwave energy of feed-in resonator 22, realizes microwave energy in resonance Intracavitary portion is redistributed, so as to the microwave energy in feed-in resonator be homogenized, to make Vacuum chamber chamber piasma large area homogenization provides guarantee.
In the present invention, the electric-field intensity distribution of intra resonant cavity can not only pass through impedance Adjustment unit 7 is adjusted, and can also be adjusted by metal probe 27 and short-circuit plunger 9 It is whole.
The plasma of the wide area surface ripple of commercial Application level can be produced using the present invention Body, and realize under extremely low air pressure with lower-wattage formation initial ionization, expand technique It is interval.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present And the illustrative embodiments used, but the invention is not limited in this.For ability For those of ordinary skill in domain, the situation of spirit and substance of the present invention is not being departed from Under, various changes and modifications can be made therein, and these variations and modifications are also considered as the present invention's Protection domain.

Claims (12)

1. a kind of surface wave plasma device, including：Microwave for producing microwave is sent out Generating apparatus, microwave transmission mating structure and vacuum chamber, the microwave transmission mating structure Including rectangular waveguide, for transmitting the microwave that the microwave generating apparatus is produced, its feature It is, described device also includes：Connecting cavity, resonator and screw probe, the connection Chamber connects the top of the rectangular waveguide and the resonator, and the screw probe is passed through successively The rectangular waveguide and connecting cavity are worn, and stretches into the inside of the resonator；
The bottom wall of the resonator is provided with multiple quartz windows, and with the vacuum chamber It is connected and seals.
2. surface wave plasma device as claimed in claim 1, it is characterised in that Circumference of the quartz window along the vacuum chamber is uniformly distributed.
3. surface wave plasma device as claimed in claim 1, it is characterised in that The cylindrical quartz part group that the quartz window is coaxially disposed by least two and diameter is different Into, and the diameter of the quartz piece from top to bottom successively decreases along the quartz window.
4. surface wave plasma device as claimed in claim 3, it is characterised in that The minimum diameter of the quartz piece is 40mm-120mm.
5. surface wave plasma device as claimed in claim 4, it is characterised in that The minimum diameter of the quartz piece is 60mm.
6. surface wave plasma device as claimed in claim 3, it is characterised in that The bottom wall of the resonator is provided with through hole, the position of the through hole and the quartz window Correspond, the shape of the through hole is matched with the quartz window, the quartz window It is arranged in the through hole, and is fixedly connected between the through hole.
7. surface wave plasma device as claimed in claim 6, it is characterised in that The quartz window and the through hole are enclosed by O to be sealed.
8. surface wave plasma device as claimed in claim 1, it is characterised in that Described device also includes at least one metal probe, and the metal probe is arranged at resonator Roof on, for changing the Electric Field Distribution in resonator, strengthen the metal probe week The electric field enclosed.
9. surface wave plasma device as claimed in claim 8, it is characterised in that The position of the metal probe is corresponding with the quartz window, and the metal probe is perpendicular Nogata to projection and corresponding quartz window it is coaxial.
10. surface wave plasma device as claimed in claim 8, it is characterised in that Edge and the upper table of quartz window that the metal probe is projected in the upper surface of quartz window The distance between the edge in face is more than or equal to 2cm.
11. surface wave plasma device as claimed in claim 1, it is characterised in that Described device also includes short-circuit plunger, and the short-circuit plunger is arranged on the rectangular waveguide Terminal, by adjusting position of the short-circuit plunger on the rectangular waveguide, can be adjusted Save the length of the effective path of the rectangular waveguide.
12. the surface wave plasma device as described in claim any one of 1-11, its It is characterised by, the height of the resonator is 10mm-85mm.
CN201610121051.9A 2016-03-03 2016-03-03 A kind of surface wave plasma device Pending CN107155256A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
CN202410115468.9A CN117794040A (en) 2016-03-03 2016-03-03 Surface wave plasma generating device and semiconductor process equipment
CN201610121051.9A CN107155256A (en) 2016-03-03 2016-03-03 A kind of surface wave plasma device
TW105140381A TWI612853B (en) 2016-03-03 2016-12-07 Surface wave plasma device
JP2018546492A JP6718972B2 (en) 2016-03-03 2016-12-28 Surface wave plasma device
SG11201807555UA SG11201807555UA (en) 2016-03-03 2016-12-28 Surface wave plasma apparatus
KR1020187028111A KR102097436B1 (en) 2016-03-03 2016-12-28 Surface wave plasma device
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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109195299A (en) * 2018-10-31 2019-01-11 上海工程技术大学 A kind of periphery wave plasma generating device
CN109698107A (en) * 2017-10-24 2019-04-30 北京北方华创微电子装备有限公司 Surface wave plasma equipment
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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0878190A (en) * 1994-09-01 1996-03-22 Kokusai Electric Co Ltd Microwave discharge device and discharge method
CN1416307A (en) * 2002-12-13 2003-05-07 北京工业大学 Method for averaging plasma by using microwave electron cyclotron resonance
WO2004057935A1 (en) * 2002-12-20 2004-07-08 Hamamatsu Foundation For Science And Technology Promotion Microwave plasma generating device
US20050257891A1 (en) * 2002-03-20 2005-11-24 Masashi Goto Plasma processing apparatus
CN101047118A (en) * 2006-03-30 2007-10-03 东京毅力科创株式会社 Plasma processing apparatus and plasma processing method
CN101144155A (en) * 2007-08-21 2008-03-19 西安电子科技大学 Microwave electron cyclotron resonance plasma chemistry gas phase sedimentation device
CN103227089A (en) * 2012-01-31 2013-07-31 东京毅力科创株式会社 Microwave emitting device and surface wave plasma processing apparatus
CN103668127A (en) * 2013-12-10 2014-03-26 北京科技大学 Domical microwave plasma chemical vapor deposition diamond film device
CN104726850A (en) * 2013-12-23 2015-06-24 朱雨 Microwave-plasma chemical vapor deposition equipment

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4678905B2 (en) * 1999-12-20 2011-04-27 徳芳 佐藤 Plasma processing equipment
JP4163432B2 (en) * 2002-03-26 2008-10-08 矢崎総業株式会社 Plasma processing equipment
CN1272621C (en) * 2002-10-30 2006-08-30 江苏大学 Method and apparatus for measuring far-ultraviolet laser scratch of interface jointing strength
JP2006040609A (en) * 2004-07-23 2006-02-09 Naohisa Goto Plasma treatment device and method, and manufacturing method for flat panel display apparatus
JP2006324551A (en) * 2005-05-20 2006-11-30 Shibaura Mechatronics Corp Plasma generator and plasma processing apparatus
JP2007258093A (en) * 2006-03-24 2007-10-04 National Univ Corp Shizuoka Univ Microwave plasma generator
JP2008027816A (en) * 2006-07-24 2008-02-07 Canon Inc Plasma processing device, and plasma processing method
JP2008181710A (en) * 2007-01-23 2008-08-07 Canon Inc Plasma treatment device and method
EP2136392A1 (en) * 2007-03-08 2009-12-23 Tokyo Electron Limited Plasma processing apparatus, plasma processing method, and storage medium
JP2009301783A (en) * 2008-06-11 2009-12-24 Tokyo Electron Ltd Plasma processing apparatus, and plasma processing method
JP2011103274A (en) * 2009-11-12 2011-05-26 Tokyo Electron Ltd Plasma processing apparatus, and microwave transmitter
JP5893865B2 (en) * 2011-03-31 2016-03-23 東京エレクトロン株式会社 Plasma processing apparatus and microwave introduction apparatus

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0878190A (en) * 1994-09-01 1996-03-22 Kokusai Electric Co Ltd Microwave discharge device and discharge method
US20050257891A1 (en) * 2002-03-20 2005-11-24 Masashi Goto Plasma processing apparatus
CN1416307A (en) * 2002-12-13 2003-05-07 北京工业大学 Method for averaging plasma by using microwave electron cyclotron resonance
WO2004057935A1 (en) * 2002-12-20 2004-07-08 Hamamatsu Foundation For Science And Technology Promotion Microwave plasma generating device
CN101047118A (en) * 2006-03-30 2007-10-03 东京毅力科创株式会社 Plasma processing apparatus and plasma processing method
CN101144155A (en) * 2007-08-21 2008-03-19 西安电子科技大学 Microwave electron cyclotron resonance plasma chemistry gas phase sedimentation device
CN103227089A (en) * 2012-01-31 2013-07-31 东京毅力科创株式会社 Microwave emitting device and surface wave plasma processing apparatus
CN103668127A (en) * 2013-12-10 2014-03-26 北京科技大学 Domical microwave plasma chemical vapor deposition diamond film device
CN104726850A (en) * 2013-12-23 2015-06-24 朱雨 Microwave-plasma chemical vapor deposition equipment

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CN110797250B (en) * 2018-08-03 2022-12-09 北京北方华创微电子装备有限公司 Surface wave plasma processing apparatus
CN110911260A (en) * 2018-09-14 2020-03-24 北京北方华创微电子装备有限公司 Surface wave plasma processing apparatus
CN109195299A (en) * 2018-10-31 2019-01-11 上海工程技术大学 A kind of periphery wave plasma generating device
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CN113170568A (en) * 2018-12-06 2021-07-23 东京毅力科创株式会社 Plasma processing apparatus and plasma processing method
CN111755308A (en) * 2019-03-27 2020-10-09 北京北方华创微电子装备有限公司 Process chamber and semiconductor processing equipment
CN110234195A (en) * 2019-07-18 2019-09-13 中国科学技术大学 Resonant cavity type ecr plasma source device and method
CN110993479A (en) * 2019-12-04 2020-04-10 北京北方华创微电子装备有限公司 Remote plasma source generating device and semiconductor processing equipment
CN114871574A (en) * 2022-05-27 2022-08-09 华中科技大学 Microwave-assisted device for removing burrs on surface of laser cutting part
CN115354311A (en) * 2022-07-15 2022-11-18 杭州电子科技大学 Slot array antenna surface wave plasma deposition device of composite left-right hand waveguide

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