CN108878243B - Surface wave plasma processing apparatus - Google Patents
Surface wave plasma processing apparatus Download PDFInfo
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- CN108878243B CN108878243B CN201710329633.0A CN201710329633A CN108878243B CN 108878243 B CN108878243 B CN 108878243B CN 201710329633 A CN201710329633 A CN 201710329633A CN 108878243 B CN108878243 B CN 108878243B
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- resonant cavity
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- processing apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32247—Resonators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
Abstract
The invention provides surface wave plasma processing equipment which comprises a reaction chamber, a microwave transmission mechanism for providing microwave energy for the reaction chamber and a resonance mechanism for realizing the excitation and tuning of the microwave energy, wherein the resonance mechanism comprises a resonance cavity arranged at the top of the reaction chamber and a plurality of metal adjusting pieces arranged in the resonance cavity; a dielectric window is arranged on the bottom wall of the resonant cavity, the resonant cavity is filled with dielectric materials, and the metal adjusting pieces are embedded in the dielectric materials. The surface wave plasma processing equipment provided by the invention can reduce the thickness of the dielectric window on the premise of ensuring the vacuum seal of the resonant cavity, thereby reducing the microwave energy loss, being beneficial to the formation of a symmetrical resonant mode and improving the distribution uniformity of an electromagnetic field.
Description
Technical Field
The invention relates to the technical field of microelectronics, in particular to surface wave plasma processing equipment.
Background
Plasma processing equipment is now widely used in the fabrication of integrated circuits or MEMS devices. The plasma processing apparatus includes a capacitively coupled plasma processing apparatus, an inductively coupled plasma processing apparatus, an electron cyclotron resonance plasma processing apparatus, a surface wave plasma processing apparatus, and the like. Among them, the surface wave plasma processing apparatus can obtain a higher plasma density and a lower electron temperature than other plasma processing apparatuses, and does not require an external magnetic field to be increased, and thus becomes one of the most advanced plasma apparatuses.
Fig. 1 is a schematic configuration diagram of a conventional surface wave plasma processing apparatus. As shown in fig. 1, the surface wave plasma processing apparatus mainly includes a reaction chamber 14, a microwave transmission mechanism for supplying microwave energy to the reaction chamber 14, and a resonance mechanism for adjusting electromagnetic field distribution, wherein a support table 15 for carrying a wafer is provided in the reaction chamber 14. The microwave source mechanism comprises a power supply 1, a microwave source (magnetron) 2, a resonator 3, an inverter 4, a load 5, a directional coupler 6, an impedance adjusting unit 7, a waveguide 8 and a feed coaxial probe 9. The resonance mechanism comprises a resonance cavity 11 and a plurality of metal adjusting pieces 12, wherein the resonance cavity 11 is arranged at the top of the reaction chamber 14; a plurality of metal adjustment members 12 are disposed in the resonant cavity 11, and an upper end of each metal adjustment member 12 is connected to a top cavity wall of the resonant cavity 11. And, there are dielectric windows 13 arranged in the bottom wall of the resonator 11 through its thickness, one dielectric window 13 being arranged below each metal adjusting piece 12.
The above surface wave plasma processing apparatus inevitably has the following problems in practical use:
firstly, in order to ensure the vacuum sealing of the resonant cavity 11, a sealing ring needs to be arranged between the dielectric window 13 and the bottom wall of the resonant cavity 11, which requires that the thickness of the dielectric window 13 is large enough to meet the sealing requirement, but since the microwave energy is attenuated in the dielectric window 13 in the vertical direction, the dielectric window 13 with a large thickness causes large microwave energy loss, and the coupling efficiency is reduced.
Secondly, because the upper end of the metal adjusting part 12 is connected with the top cavity wall of the resonant cavity 11, the metal adjusting part 12 can be fixed, and the fixing mode influences the formation of a symmetrical resonant mode, thereby influencing the distribution uniformity of an electric field.
Disclosure of Invention
The invention aims to solve at least one technical problem in the prior art, and provides surface wave plasma processing equipment which can reduce the thickness of a dielectric window on the premise of ensuring the vacuum seal of a resonant cavity, thereby reducing the loss of microwave energy, and is beneficial to the formation of a symmetrical resonant mode, thereby improving the distribution uniformity of an electric field.
To achieve the object of the present invention, there is provided a surface wave plasma processing apparatus comprising a reaction chamber, a microwave transmission mechanism for supplying microwave energy to the reaction chamber, and a resonance mechanism for achieving excitation and tuning of the microwave energy, wherein,
the resonance mechanism comprises a resonance cavity arranged at the top of the reaction chamber and a plurality of metal adjusting pieces arranged in the resonance cavity;
a dielectric window is arranged on the bottom wall of the resonant cavity, the resonant cavity is filled with dielectric materials, and the metal adjusting pieces are embedded in the dielectric materials.
Preferably, a plurality of the metal adjustment members are not in contact with a chamber wall of the resonant cavity.
Preferably, the vertical distance between the metal adjusting piece and the bottom wall of the resonant cavity is equal to the vertical distance between the metal adjusting piece and the top wall of the resonant cavity.
Preferably, a cooling channel is provided in the dielectric material for introducing cooling water.
Preferably, the cooling channel is one or a plurality of annular channels with different diameters, and the annular channels are concentrically arranged.
Preferably, the dielectric material comprises polytetrafluoroethylene, quartz or ceramic.
Preferably, the surface wave plasma processing apparatus further includes a connection unit disposed between the microwave transmission mechanism and the resonant cavity, for feeding the microwaves transmitted by the microwave transmission mechanism into the resonant cavity, the connection unit including a connection cylinder and a metal probe, wherein,
the connecting cylinder is vertically arranged at the top of the resonant cavity, and the interior of the connecting cylinder is communicated with the interior of the resonant cavity;
the microwave transmission mechanism comprises a waveguide for transmitting microwave energy, and the waveguide is connected with the top of the connecting cylinder and communicated with the inside of the connecting cylinder;
the metal probe is vertically positioned in the connecting cylinder and is coaxially arranged with the connecting cylinder, the lower end of the metal probe is vertically embedded in the dielectric material, and the upper end of the metal probe is a free end and extends into the waveguide.
Preferably, the thickness of the dielectric window ranges from 2 mm to 20 mm.
Preferably, the metal adjusting piece is a sphere, a cylinder or a cone.
Preferably, a plurality of the metal adjusting pieces are symmetrically distributed along the circumferential direction of the resonant cavity.
The invention has the following beneficial effects:
according to the surface wave plasma processing equipment provided by the invention, the resonant cavity is filled with the dielectric material, and the vacuum sealing of the resonant cavity can be realized without depending on the dielectric window, so that the thickness of the dielectric window can be reduced, and the microwave energy loss is reduced. Moreover, the plurality of metal adjusting pieces are embedded in the dielectric material, so that the formation of a symmetrical resonance mode is facilitated, and the distribution uniformity of the electric field can be improved.
Drawings
Fig. 1 is a schematic view of a conventional surface wave plasma processing apparatus;
FIG. 2 is a schematic structural diagram of a surface wave plasma processing apparatus according to an embodiment of the present invention;
FIG. 3 is a top cross-sectional view of a resonant cavity in an embodiment of the invention.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the surface wave plasma processing apparatus provided by the present invention will be described in detail below with reference to the accompanying drawings.
Fig. 2 is a schematic structural diagram of a surface wave plasma processing apparatus according to an embodiment of the present invention. FIG. 3 is a top cross-sectional view of a resonant cavity in an embodiment of the invention. Referring to fig. 2 and 3 together, the surface wave plasma processing apparatus includes a reaction chamber 37, a microwave transmission mechanism, and a resonance mechanism. Therein, a support table 38 is provided in the reaction chamber 37 for carrying the wafer. The microwave transmission mechanism includes a power source 21, a microwave source (magnetron) 22, a resonator 23, an inverter 24, a load 25, a directional coupler 26, an impedance adjusting unit 27, a waveguide 28, and a short-circuiting piston 29. The microwave transmission mechanism provides microwave energy to the reaction chamber 37 through a resonant mechanism. The resonant mechanism is used to achieve excitation and tuning of microwave energy to meet different requirements for plasma distribution under different process conditions.
In the present embodiment, the resonant mechanism includes a resonant cavity 32 and a plurality of metal adjusting members 34, wherein the resonant cavity 32 is disposed at the top of the reaction chamber 37, and the resonant cavity 32 is filled with a dielectric material 33, and the dielectric material 33 is preferably a resin material such as teflon, quartz, or a ceramic material with low dielectric loss. A plurality of metal tuning elements 34 are embedded in the dielectric material 33; and, a dielectric window 36 is provided on the bottom wall of the resonant cavity 32 for coupling microwave energy into the reaction chamber 37 to excite the generation of plasma in the reaction chamber 37. In the present embodiment, there are a plurality of dielectric windows 36, each dielectric window 36 vertically penetrates through the bottom wall of the resonant cavity 32, and one dielectric window 36 is correspondingly disposed below each metal adjusting member 34.
Since the dielectric material 33 fills the entire resonant cavity 32, it can seal the resonant cavity 32, so that the vacuum sealing of the resonant cavity 32 can be realized without relying on the dielectric window 36, and further, the thickness of the dielectric window 36 can be reduced to reduce the microwave energy loss. Preferably, the thickness of the dielectric window 36 ranges from 2 mm to 20mm, and in this range, the microwave energy loss can be prevented from being too large.
The metallic conditioning member 34 is capable of increasing the electric field strength in the vicinity thereof, thereby forming a high-frequency electromagnetic field in the resonant cavity 32 in the vicinity of the metallic conditioning member 34, the distribution of which affects the density distribution of the plasma formed in the reaction chamber 37. The distribution of the high-frequency electromagnetic field can be adjusted by adjusting the vertical distance between the lower end of each metal adjusting piece 34 and the dielectric window 36, so that the density distribution of the plasma formed in the reaction chamber 37 can be adjusted, and different requirements on the distribution of the plasma under different process conditions can be further met. Preferably, a plurality of metal adjusting members 34 are symmetrically distributed along the circumference of the resonant cavity 32 to uniformly adjust the distribution of the high-frequency electromagnetic field.
Moreover, the plurality of metal adjusting pieces 34 are embedded in the dielectric material 33, so that compared with the prior art that the upper ends of the metal adjusting pieces are connected with the top cavity wall of the resonant cavity, the formation of a symmetrical resonant mode is facilitated, and the distribution uniformity of an electric field can be improved. Preferably, the plurality of metallic tuning elements 34 are not in contact with the chamber walls of the resonant cavity 32, which further facilitates the formation of symmetrical resonant modes. It is further preferred that the vertical spacing between the metal adjusting member 34 and the bottom wall of the resonant cavity 32 is equal to the vertical spacing between the metal adjusting member 34 and the top wall of the resonant cavity 32, i.e., the metal adjusting member 34 is suspended in the center of the resonant cavity 32, thereby forming a symmetric resonant mode.
In addition, since the metal adjuster 34 is embedded in the dielectric material 33, the metal adjuster 34 may be designed in any shape, such as a sphere, a cylinder, a cone, or the like.
Preferably, the dielectric material 33 is provided with a cooling channel 35, and by introducing cooling water into the cooling channel 35, not only the dielectric material 33 can be cooled, but also the cooling water can be used as a water load to absorb microwave power, so that microwave energy returned from the resonant cavity 32 to the microwave transmission mechanism can be reduced, and the matching range of the matching device can be increased. Further preferably, since the temperature of the cooling water is in direct proportion to the amount of the reflected power absorbed by the cooling water, the amount of the reflected power absorbed by the cooling water can be adjusted by adjusting the temperature of the cooling water, so as to reduce the microwave energy returning from the resonant cavity to the microwave transmission mechanism, and realize that the microwave energy flows only in one direction towards the reaction chamber 37.
In practical applications, the cooling channel 35 may be an annular channel, and the annular channel may be one or more, and the plurality of annular channels have different diameters and are concentrically arranged.
In this embodiment, the surface wave plasma processing apparatus further includes a connection unit disposed between the microwave transmission mechanism and the resonant cavity 32, for feeding the microwaves transmitted by the microwave transmission mechanism into the resonant cavity 32, specifically, the connection unit includes a connection cylinder 30 and a metal probe 31, wherein the connection cylinder 30 is vertically disposed on the top of the resonant cavity 32, and the inside thereof is communicated with the inside of the resonant cavity 32; a waveguide 28 for transmitting microwave energy is connected to the top of the connector barrel 30 and communicates with the interior of the connector barrel 30. The metal probe 31 is vertically located in the connector barrel 30 and is coaxially disposed with the connector barrel 30, and a lower end of the metal probe 31 is vertically embedded in the dielectric material 33, and an upper end of the metal probe 31 is a free end and extends into the waveguide 28. A metal probe 31 is used to feed microwave energy into the resonant cavity 32. Since the lower end of the metal probe 31 is embedded in the dielectric material 33, the metal probe 31 can be suspended in the connecting cylinder 30 to improve the feeding efficiency of the microwave energy.
In summary, in the surface wave plasma processing apparatus provided in the embodiments of the present invention, the resonant cavity is filled with the dielectric material, and the vacuum sealing of the resonant cavity can be achieved without depending on the dielectric window, so that the thickness of the dielectric window can be reduced, and the microwave energy loss can be reduced. And, through embedding a plurality of metal conditioning pieces in dielectric material, be favorable to the formation of symmetry resonance mode to can improve the distribution uniformity of electric field.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. Surface wave plasma processing apparatus comprising a reaction chamber, microwave transmission means for supplying microwave energy to said reaction chamber and resonant means for effecting excitation and tuning of the microwave energy,
the resonance mechanism comprises a resonance cavity arranged at the top of the reaction chamber and a plurality of metal adjusting pieces arranged in the resonance cavity;
a dielectric window is arranged on the bottom wall of the resonant cavity, the resonant cavity is filled with dielectric materials, and the metal adjusting pieces are embedded in the dielectric materials.
2. The apparatus of claim 1, wherein a plurality of the metallic conditioning members are not in contact with a chamber wall of the resonant cavity.
3. The surface wave plasma processing apparatus of claim 2, wherein a vertical spacing between the metallic tuning member and a bottom wall of the resonant cavity is equal to a vertical spacing between the metallic tuning member and a top wall of the resonant cavity.
4. A surface wave plasma processing apparatus as recited in claim 1 wherein cooling channels are provided in said dielectric material for the passage of cooling water.
5. A surface wave plasma processing apparatus as recited in claim 4 wherein said cooling channel is one or a plurality of annular channels of different diameters and a plurality of said annular channels are concentrically disposed.
6. The surface wave plasma processing apparatus of claim 1, wherein the dielectric material comprises polytetrafluoroethylene, quartz, or ceramic.
7. The surface wave plasma processing apparatus of claim 1, further comprising a connection unit disposed between the microwave transmission mechanism and the resonant cavity for feeding microwaves transmitted by the microwave transmission mechanism into the resonant cavity, wherein the connection unit comprises a connector barrel and a metal probe, wherein,
the connecting cylinder is vertically arranged at the top of the resonant cavity, and the interior of the connecting cylinder is communicated with the interior of the resonant cavity;
the microwave transmission mechanism comprises a waveguide for transmitting microwave energy, and the waveguide is connected with the top of the connecting cylinder and communicated with the inside of the connecting cylinder;
the metal probe is vertically positioned in the connecting cylinder and is coaxially arranged with the connecting cylinder, the lower end of the metal probe is vertically embedded in the dielectric material, and the upper end of the metal probe is a free end and extends into the waveguide.
8. A surface wave plasma processing apparatus as defined in claim 1 wherein said dielectric window thickness is in the range of 2 to 20 mm.
9. A surface wave plasma processing apparatus as recited in claim 1 wherein said metal tuning member is a sphere, cylinder or cone.
10. The surface wave plasma processing apparatus of claim 1, wherein the plurality of metal tuning members are symmetrically distributed about a circumference of the resonant cavity.
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| CN201710329633.0A CN108878243B (en) | 2017-05-11 | 2017-05-11 | Surface wave plasma processing apparatus |
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| CN201710329633.0A CN108878243B (en) | 2017-05-11 | 2017-05-11 | Surface wave plasma processing apparatus |
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| CN109802217B (en) * | 2018-12-11 | 2022-01-18 | 北京铭安博运科技有限公司 | Coaxial coupling microwave medium resonant cavity |
| CN114759333B (en) * | 2022-06-14 | 2022-09-02 | 成都纽曼和瑞微波技术有限公司 | Microwave transmission device and microwave plasma equipment |
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| TW201330045A (en) * | 2011-09-30 | 2013-07-16 | Tokyo Electron Ltd | Plasma tuning rods in microwave resonator plasma sources |
| CN103779177A (en) * | 2014-01-21 | 2014-05-07 | 电子科技大学 | Medium resonant cavity for microwave plasma lamp |
| CN105430862A (en) * | 2014-09-23 | 2016-03-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Surface-wave plasma equipment |
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1856211A (en) * | 2005-03-30 | 2006-11-01 | 东京毅力科创株式会社 | Plasma processing apparatus and method |
| CN101099419A (en) * | 2005-05-12 | 2008-01-02 | 株式会社岛津制作所 | Surface wave excitation plasma processing system |
| CN101673655A (en) * | 2009-09-23 | 2010-03-17 | 电子科技大学 | Microwave plasma resonant cavity used for depositing diamond film |
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