CN103779177A - Medium resonant cavity for microwave plasma lamp - Google Patents
Medium resonant cavity for microwave plasma lamp Download PDFInfo
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- CN103779177A CN103779177A CN201410027724.5A CN201410027724A CN103779177A CN 103779177 A CN103779177 A CN 103779177A CN 201410027724 A CN201410027724 A CN 201410027724A CN 103779177 A CN103779177 A CN 103779177A
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- resonant cavity
- plasma lamp
- bulb
- microwave plasma
- medium resonant
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Abstract
The invention discloses a medium resonant cavity for a microwave plasma lamp. The medium resonant cavity for the microwave plasma lamp is characterized by being provided with a punching structure which can make the medium resonant cavity not prone to burst in the machining process, and the yield of machining the medium resonant cavity is greatly improved. Meanwhile, with the punching structure, the weight of the medium resonant cavity can be reduced, and therefore the weight of the plasma lamp is reduced. Furthermore, with the punching structure, an electric field where a bulb is placed can be further enlarged, starting of the bulb and the enhancement of energy exchange are facilitated.
Description
Technical field
The invention belongs to plasma lighting field, the electrode-less plasma lamps that is specifically related to be excited by microwave.
Background technology
The operation principle of microwave plasma lamp is: a loop of rf of microwave source connecting media resonant cavity composition, the quartz bulb that contains packing material and other gases of a sealing is placed at resonant cavity center.Power amplifier produces microwave, and forms standing wave in bulb inner wall, and electric field is the strongest in the center of bulb, makes gas ionization heating.The heat that in lamp, gas ionization sends heats up packing material and evaporation, forms plasma, and concentrated and luminous efficiently in quartz container.
Dielectric resonant chamber wherein, mainly plays the effect such as microwave transmission, model selection, and determining of its physical dimension directly affects the operating frequency of plasma lamp, is in microwave plasma lamp to be one of most important parts.At present, dielectric resonant chamber adopts one-time formed solid construction more, and as shown in Figure 1, it is greater than 2 dielectric material by least one dielectric constant makes, and for example pottery waits solid material.Because the dielectric resonance cavity volume of this solid construction is larger, in high-temperature firing process, easily burst, therefore rate of finished products is very low.
Summary of the invention
The object of the invention is the deficiency easily bursting in order to overcome existing dielectric resonant chamber in the course of processing, a kind of new dielectric resonance cavity configuration is provided.This structure, not affecting the electrical quantity of resonant cavity, in the situation of Electric Field Distribution, resonance frequency, has greatly improved the rate of finished products of dielectric resonant chamber processing.
To achieve these goals, technical scheme provided by the invention is: a kind of dielectric resonant chamber for microwave plasma lamp, comprise resonant cavity front end (1), and resonant cavity end face (2), is characterized in that.
Described resonant cavity end face (2) has the fixing filler (3) of bulb, and this bulb has bulb placement location (4) in the middle of fixing filler (3).
Described resonant cavity front end (1) each side has three holes (5), and resonant cavity is crossed in described hole.
Described perforation is shaped as circle or rectangle.
The resonance frequency of described open-celled structure is 400-500MHz, is 10000-50000V/m in the electric field strength of bulb placement location center.
The resonance frequency of described open-celled structure is 440.8MHz, when microwave input power is 1W, is 17000V/m in the electric field strength of bulb placement location center.
Beneficial effect of the present invention: this perforation structure can make dielectric resonant chamber be difficult for bursting in the course of processing, has greatly improved the rate of finished products of dielectric resonant chamber processing.Meanwhile, perforation structure can reduce the weight of dielectric resonant chamber, and then reduces the weight of plasma lamp.In addition, this structure can further increase the electric field of bulb placement location, is convenient to bulb and starts and strengthen energy exchange.
Accompanying drawing explanation
Fig. 1 is the dielectric resonant chamber structural representation of original microwave plasma;
Fig. 2 is structural representation of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments, the invention will be further described.
As shown in Figure 1, the dielectric resonant chamber structural representation that existing microwave plasma lamp is used, wherein 100 for one-shot forming dielectric resonant chamber, 101 front end faces that are this resonant cavity, 102 is bulb placement location, 103 fixedly use filler for bulb.
Patent of the present invention is a kind of dielectric resonant chamber for microwave plasma lamp, comprises resonant cavity front end (1), and resonant cavity end face (2), is characterized in that:
Described resonant cavity end face (2) has the fixing filler (3) of bulb, and this bulb has bulb placement location (4) in the middle of fixing filler (3);
Described resonant cavity front end (1) each side has three holes (5), and resonant cavity is crossed in described hole.
Described perforation is shaped as circle or rectangle.
The resonance frequency of described open-celled structure is 440.8MHz, is 17000V/m in the electric field strength of bulb placement location center.
Embodiment 1: as shown in Figure 2, perforate is circular, penetrates front end face and rear end face, and pore radius 3mm, in each 3 holes of evenly arranging, two ends of dielectric resonant chamber.
We adopt CST Microwave Studio to carry out full three-dimensional simulation calculating to these two structures, show that the resonance frequency of open-celled structure is not 438.4MHz, and the resonance frequency of open-celled structure is 440.8MHz, resonance frequency relative change rate is 0.55%, on the impact of microwave plasma lamp operating frequency, almost can ignore.
Be that open-celled structure is 16000V/m in the electric field strength of bulb placement location center, and open-celled structure electric field strength increases, and is 17000V/m, this is more conducive to startup and the energy exchange of plasma lamp.
Claims (4)
1. the dielectric resonant chamber for microwave plasma lamp; comprise resonant cavity front end (1); resonant cavity end face (2), is characterized in that described resonant cavity end face (2) has the fixing filler (3) of bulb, and this bulb has bulb placement location (4) in the middle of fixing filler (3);
Described resonant cavity front end (1) each side has three holes (5), and resonant cavity is crossed in described hole.
2. a kind of dielectric resonant chamber for microwave plasma lamp according to claim 1, is characterized in that described perforation is shaped as circle or rectangle.
3. a kind of dielectric resonant chamber for microwave plasma lamp according to claim 1, the resonance frequency that it is characterized in that described open-celled structure is 400-500MHz, when microwave input power is 1W, be 10000-50000V/m in the electric field strength of bulb placement location center.
4. a kind of dielectric resonant chamber for microwave plasma lamp according to claim 3, the resonance frequency that it is characterized in that described open-celled structure is 440.8MHz, is 17000V/m in the electric field strength of bulb placement location center.
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CN201410027724.5A CN103779177A (en) | 2014-01-21 | 2014-01-21 | Medium resonant cavity for microwave plasma lamp |
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CN201410027724.5A CN103779177A (en) | 2014-01-21 | 2014-01-21 | Medium resonant cavity for microwave plasma lamp |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104064441A (en) * | 2014-06-12 | 2014-09-24 | 单家芳 | Microwave resonant cavity for plasma light source |
CN104952691A (en) * | 2015-06-17 | 2015-09-30 | 单家芳 | Microwave plasma light source |
CN108878243A (en) * | 2017-05-11 | 2018-11-23 | 北京北方华创微电子装备有限公司 | Surface wave plasma process equipment |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US4975625A (en) * | 1988-06-24 | 1990-12-04 | Fusion Systems Corporation | Electrodeless lamp which couples to small bulb |
JPH05335806A (en) * | 1992-06-02 | 1993-12-17 | Murata Mfg Co Ltd | Dielectric microwave filter |
CN1260769C (en) * | 2000-12-18 | 2006-06-21 | Lg电子株式会社 | Resonator of microwave lighting device and method for making same |
CN100555559C (en) * | 2005-09-28 | 2009-10-28 | Lg电子株式会社 | Comprise and have the electrodeless lighting system of different apertures than the resonator of part |
-
2014
- 2014-01-21 CN CN201410027724.5A patent/CN103779177A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4975625A (en) * | 1988-06-24 | 1990-12-04 | Fusion Systems Corporation | Electrodeless lamp which couples to small bulb |
JPH05335806A (en) * | 1992-06-02 | 1993-12-17 | Murata Mfg Co Ltd | Dielectric microwave filter |
CN1260769C (en) * | 2000-12-18 | 2006-06-21 | Lg电子株式会社 | Resonator of microwave lighting device and method for making same |
CN100555559C (en) * | 2005-09-28 | 2009-10-28 | Lg电子株式会社 | Comprise and have the electrodeless lighting system of different apertures than the resonator of part |
Non-Patent Citations (1)
Title |
---|
卢辉等: "微波等离子体灯介质谐振腔的仿真计算", 《中国电子学会真空电子学分会第十九届学术年会论文集(下册)》 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104064441A (en) * | 2014-06-12 | 2014-09-24 | 单家芳 | Microwave resonant cavity for plasma light source |
CN104952691A (en) * | 2015-06-17 | 2015-09-30 | 单家芳 | Microwave plasma light source |
CN108878243A (en) * | 2017-05-11 | 2018-11-23 | 北京北方华创微电子装备有限公司 | Surface wave plasma process equipment |
CN108878243B (en) * | 2017-05-11 | 2020-08-21 | 北京北方华创微电子装备有限公司 | Surface wave plasma processing apparatus |
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Application publication date: 20140507 |