CN108878243A - Surface wave plasma process equipment - Google Patents
Surface wave plasma process equipment Download PDFInfo
- Publication number
- CN108878243A CN108878243A CN201710329633.0A CN201710329633A CN108878243A CN 108878243 A CN108878243 A CN 108878243A CN 201710329633 A CN201710329633 A CN 201710329633A CN 108878243 A CN108878243 A CN 108878243A
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- Prior art keywords
- resonant cavity
- process equipment
- surface wave
- plasma process
- wave plasma
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32247—Resonators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
Abstract
The present invention provides a kind of surface wave plasma process equipment, it includes reaction chamber, for providing the microwave transmission mechanism of microwave energy and the resonance mechanism of excitation and tuning for realizing microwave energy to the reaction chamber, wherein, resonance mechanism includes the resonant cavity being arranged at the top of reaction chamber and the multiple metal regulating parts being set in resonant cavity；It is provided with medium window on the bottom wall of resonant cavity, is full of dielectric material in resonant cavity, multiple metal regulating parts are embedded in the dielectric material.Surface wave plasma process equipment provided by the invention, it can reduce the thickness of medium window, under the premise of guaranteeing the vacuum sealing of resonant cavity so as to reduce microwave, and be conducive to the formation of symmetry mode of resonance, so as to improve the distributing homogeneity of electromagnetic field.
Description
Technical field
The present invention relates to microelectronics technologies, and in particular, to a kind of surface wave plasma process equipment.
Background technique
Currently, plasma processing device is widely used in the manufacturing process of integrated circuit or MEMS device.Deng
Plasma processing apparatus includes capacitance coupling plasma process equipment, inductively coupled plasma body process equipment, electron cyclotron
Resonance Plasma process equipment and surface wave plasma process equipment etc..Wherein, surface wave plasma process equipment phase
For other plasma processing devices, higher plasma density, lower electron temperature can be obtained, and do not need
Increase external magnetic field, therefore surface wave plasma process equipment becomes one of state-of-the-art plasma apparatus.
Fig. 1 is a kind of existing structural schematic diagram of surface wave plasma process equipment.As shown in Figure 1, surface wave etc.
Plasma processing apparatus mainly includes reaction chamber 14, for providing the microwave transmission mechanism of microwave energy to the reaction chamber 14
And the resonance mechanism for adjusting magnetic distribution, wherein the supporting table for bearing wafer is provided in reaction chamber 14
15.Microwave source mechanism includes power supply 1, microwave source (magnetron) 2, resonator 3, inverter 4, load 5, directional coupler 6, impedance
Adjust unit 7, waveguide 8 and feed coaxial probe 9.Resonance mechanism includes resonant cavity 11 and multiple metal regulating parts 12, wherein humorous
The top of reaction chamber 14 is arranged in vibration chamber 11；Multiple metal regulating parts 12 are arranged in resonant cavity 11, and each metal is adjusted
The upper end of part 12 is connect with the top chamber wall of resonant cavity 11.Also, it is provided in the bottom wall of resonant cavity 11 through its thickness
Medium window 13, the lower section of each metal regulating part 12 are provided with a medium window 13.
Above-mentioned surface wave plasma process equipment is inevitably present following problems in practical applications：
First, the vacuum sealing in order to guarantee resonant cavity 11, needs to set between medium window 13 and the bottom wall of resonant cavity 11
Sealing ring is set, this just needs the thickness of medium window 13 sufficiently large, to meet seal request, still, since microwave energy is in medium
The decaying in vertical direction can occur in window 13, therefore, it is larger that the biggish medium window 13 of thickness will cause microwave energy loss, drop
Low coupling efficiency.
Second, the upper end due to metal regulating part 12 is connect with the top chamber wall of resonant cavity 11, it is just able to achieve metal adjusting
The fixation of part 12, this fixed form influences the formation of symmetry mode of resonance, to influence the distributing homogeneity of electric field.
Summary of the invention
The present invention is directed at least solve one of the technical problems existing in the prior art, a kind of surface wave plasma is proposed
Body process equipment can reduce the thickness of medium window, under the premise of guaranteeing the vacuum sealing of resonant cavity so as to reduce
Microwave, and be conducive to the formation of symmetry mode of resonance, so as to improve the distributing homogeneity of electric field.
A kind of surface wave plasma process equipment is provided to achieve the purpose of the present invention, which includes reaction chamber
Room, for the reaction chamber provide microwave energy microwave transmission mechanism and for realizing the excitation and tuning of microwave energy
Resonance mechanism, wherein
The resonance mechanism includes that the resonant cavity at the top of the reaction chamber is arranged in and is set in the resonant cavity
Multiple metal regulating parts；
It is provided with medium window on the bottom wall of the resonant cavity, is full of dielectric material, multiple metals in the resonant cavity
Regulating part is embedded in the dielectric material.
Preferably, multiple metal regulating parts are not contacted with the chamber wall of the resonant cavity.
Preferably, the vertical spacing between the metal regulating part and the bottom wall of the resonant cavity is adjusted equal to the metal
Vertical spacing between part and the roof of the resonant cavity.
Preferably, it is provided with cooling duct in the dielectric material, to be passed through cooling water.
Preferably, multiple circular passages that the cooling duct is one or diameter is different, and multiple annulars
Channel is arranged concentrically.
Preferably, the dielectric material includes polytetrafluoroethylene (PTFE), quartz or ceramics.
Preferably, the surface wave plasma process equipment further includes connection unit, and the connection unit is arranged in institute
It states between microwave transmission mechanism and the resonant cavity, resonant cavity described in the microwave feed-in for transmitting the microwave transmission mechanism
In, the connection unit includes connecting cylinder and metal probe, wherein
The connecting cylinder is vertically arranged in the top of the resonant cavity, and its inside is connected with the inside of the resonant cavity
It is logical；
The microwave transmission mechanism includes being used for transmission the waveguide of microwave energy, the top of the waveguide and the connecting cylinder
Connection, and be connected to the inside of the connecting cylinder；
The metal probe is positioned vertically in the connecting cylinder, and is coaxially disposed with the connecting cylinder, and the gold
The lower end for belonging to probe is embedded in vertically in the dielectric material, and the upper end of the metal probe is free end and extends to the wave
In leading.
Preferably, the value range of the medium window thickness is in 2~20mm.
Preferably, the metal regulating part is sphere, cylinder or cone.
Preferably, multiple metal regulating parts are symmetrical along the circumferential direction of the resonant cavity.
The invention has the advantages that：
Surface wave plasma process equipment provided by the invention is not necessarily to by being full of dielectric material in resonant cavity
The vacuum sealing of resonant cavity can be realized by medium window, so as to reduce the thickness of medium window, to reduce microwave energy damage
It loses.Also, by the way that multiple metal regulating parts are embedded in dielectric material, be conducive to the formation of symmetry mode of resonance, thus
The distributing homogeneity of electric field can be improved.
Detailed description of the invention
Fig. 1 is a kind of existing structural schematic diagram of surface wave plasma process equipment；
Fig. 2 is the structural schematic diagram of surface wave plasma process equipment provided in an embodiment of the present invention；
Fig. 3 is the overhead sectional view of resonant cavity in the embodiment of the present invention.
Specific embodiment
To make those skilled in the art more fully understand technical solution of the present invention, come with reference to the accompanying drawing to the present invention
The surface wave plasma process equipment of offer is described in detail.
Fig. 2 is the structural schematic diagram of surface wave plasma process equipment provided in an embodiment of the present invention.Fig. 3 is the present invention
The overhead sectional view of resonant cavity in embodiment.Referring to Figure 2 together and Fig. 3, surface wave plasma process equipment include reaction
Chamber 37, microwave transmission mechanism and resonance mechanism.Wherein, it is provided with supporting table 38 in reaction chamber 37, is used for bearing wafer.
Microwave transmission mechanism includes power supply 21, microwave source (magnetron) 22, resonator 23, inverter 24, load 25, directional coupler
26, impedance adjustment unit 27, waveguide 28 and short-circuit plunger 29.The microwave transmission mechanism is mentioned by resonance mechanism to reaction chamber 37
For microwave energy.The resonance mechanism for realizing microwave energy excitation and tuning, with meet under different process conditions it is right
The different of plasma distribution require.
In the present embodiment, resonance mechanism includes resonant cavity 32 and multiple metal regulating parts 34, wherein resonant cavity 32 is arranged
At the top of reaction chamber 37, and dielectric material 33 is full of in resonant cavity 32, which preferably uses such as Teflon
The material with lower dielectric loss of resin material, quartz or the ceramics of dragon etc. etc..Multiple metal regulating parts 34 are embedded
In dielectric material 33；Also, medium window 36 is provided on the bottom wall of resonant cavity 32, for microwave energy to be coupled into instead
It answers in chamber 37, generates plasma to excite in reaction chamber 37.In the present embodiment, medium window 36 is multiple, each
Medium window 36 runs through the bottom wall of resonant cavity 32 vertically, and a medium window 36 is correspondingly arranged below each metal regulating part 34.
Since dielectric material 33 is full of entire resonant cavity 32, this can play the role of sealed cavity 32, without
The vacuum sealing of resonant cavity 32 can be realized by medium window 36, and then can reduce the thickness of medium window 36, to reduce microwave
Energy loss.Preferably, the value range of the thickness of medium window 36 is in 2~20mm, in the range, can be to avoid microwave energy
It loses excessive.
Metal regulating part 34 can enhance the electric field strength near it, to be located at the metal regulating part in resonant cavity 32
Electromagnetic field of high frequency is formed near 34, the distribution of the electromagnetic field of high frequency will affect the plasma formed in reaction chamber 37
Density Distribution.The vertical spacing between lower end and medium window 36 by adjusting each metal regulating part 34, can be to high-frequency electrical
The distribution in magnetic field is adjusted, so as to adjust the Density Distribution of the plasma formed in reaction chamber 37, Jin Erke
To meet the different requirements that the plasma under different process conditions is distributed.Preferably, multiple metal regulating parts 34 are along humorous
The circumferential direction of vibration chamber 32 is symmetrical, is adjusted with the distribution equably to electromagnetic field of high frequency.
Also, by the way that multiple metal regulating parts 34 are embedded in dielectric material 33, adjusted with metal in the prior art
The upper end of part is more advantageous to the formation of symmetry mode of resonance, compared with the connection of the top chamber wall of resonant cavity so as to improve
The distributing homogeneity of electric field.Preferably, multiple metal regulating parts 34 are not contacted with the chamber wall of resonant cavity 32, this further promotes
The formation of symmetry mode of resonance.It is further preferred that the vertical spacing between metal regulating part 34 and the bottom wall of resonant cavity 32
Equal to the vertical spacing between metal regulating part 34 and the roof of resonant cavity 32, that is, metal regulating part 34 is suspended in resonant cavity 32
Center, to form symmetry mode of resonance.
In addition, metal regulating part 34 can be designed as arbitrary shape since metal regulating part 34 is embedded in dielectric material 33
Shape, such as sphere, cylinder or cone etc..
Preferably, cooling duct 35 is provided in dielectric material 33, by being passed through cooling water into cooling duct 35, no
Only can be with cooling medium material 33, and cooling water is also used as water load and absorbs microwave power, so as to reduce from humorous
The chamber 32 that shakes returns to the microwave energy in microwave transmission mechanism, and then can increase the matching range of adaptation.It is further preferred that
Due to the size direct proportionality for the reflection power that the temperature level of cooling water is absorbed with it, pass through and adjusts cooling water
Temperature, the size for the reflection power that adjustable cooling water absorbs returns in microwave transmission mechanism with reducing self-resonance chamber
Microwave energy realizes that microwave energy is only oriented towards the direction one-way flow of reaction chamber 37.
In practical applications, cooling duct 35 can be circular passage, and the circular passage can be for one or more
A, the diameter of multiple circular passages is different, and is arranged concentrically.
In the present embodiment, surface wave plasma process equipment further includes connection unit, which is arranged micro-
Between wave transmission mechanism resonant cavity 32, in the microwave feed-in resonant cavity 32 for transmitting microwave transmission mechanism, specifically, even
Order member includes connecting cylinder 30 and metal probe 31, wherein connecting cylinder 30 is vertically arranged in the top of resonant cavity 32, and inside it
It is connected to the inside of resonant cavity 32；The waveguide 28 for being used for transmission microwave energy is connect with the top of connecting cylinder 30, and and connecting cylinder
30 inside is connected.Metal probe 31 is positioned vertically in connecting cylinder 30, and is coaxially disposed with the connecting cylinder 30, and metal
The lower end of probe 31 is embedded in vertically in dielectric material 33, and the upper end of metal probe 31 is free end and extends in waveguide 28.
Metal probe 31 is used for will be in microwave energy feed-in resonant cavity 32.Since the lower end of metal probe 31 is embedded in dielectric material 33
In, metal probe 31 can be suspended in connecting cylinder 30, to improve the feed-in efficiency of microwave energy.
In conclusion surface wave plasma process equipment provided in an embodiment of the present invention, by being filled in resonant cavity
Full dielectric material, it is not necessary that the vacuum sealing of resonant cavity can be realized by medium window, so as to reduce the thickness of medium window, with
Reduce microwave.Also, by the way that multiple metal regulating parts are embedded in dielectric material, be conducive to symmetry resonant mode
The formation of formula, so as to improve the distributing homogeneity of electric field.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of surface wave plasma process equipment, which is characterized in that the equipment includes reaction chamber, is used for the reaction
Chamber provides the microwave transmission mechanism of microwave energy and the resonance mechanism of excitation and tuning for realizing microwave energy, wherein
The resonance mechanism includes that the resonant cavity at the top of the reaction chamber is arranged in and is set to multiple in the resonant cavity
Metal regulating part；
It is provided with medium window on the bottom wall of the resonant cavity, dielectric material is full of in the resonant cavity, multiple metals are adjusted
Part is embedded in the dielectric material.
2. equipment according to claim 1, which is characterized in that the chamber of multiple the metal regulating parts and the resonant cavity
Wall does not contact.
3. surface wave plasma process equipment according to claim 2, which is characterized in that the metal regulating part and institute
Vertical spacing between the bottom wall of resonant cavity is stated to be equal between vertical between the metal regulating part and the roof of the resonant cavity
Away from.
4. surface wave plasma process equipment according to claim 1, which is characterized in that set in the dielectric material
It is equipped with cooling duct, to be passed through cooling water.
5. surface wave plasma process equipment according to claim 4, which is characterized in that the cooling duct is one
Or multiple circular passages that diameter is different, and multiple circular passages are arranged concentrically.
6. surface wave plasma process equipment according to claim 1, which is characterized in that the dielectric material includes poly-
Tetrafluoroethene, quartz or ceramics.
7. surface wave plasma process equipment according to claim 1, the surface wave plasma process equipment is also
Including connection unit, the connection unit is arranged between the microwave transmission mechanism and the resonant cavity, and being used for will be described micro-
In resonant cavity described in the microwave feed-in of wave transmission mechanism transmission, which is characterized in that the connection unit includes connecting cylinder and metal
Probe, wherein
The connecting cylinder is vertically arranged in the top of the resonant cavity, and its inside is connected with the inside of the resonant cavity；
The microwave transmission mechanism includes being used for transmission the waveguide of microwave energy, is connected at the top of the waveguide and the connecting cylinder
It connects, and is connected to the inside of the connecting cylinder；
The metal probe is positioned vertically in the connecting cylinder, and is coaxially disposed with the connecting cylinder, and the metal is visited
The lower end of needle is embedded in vertically in the dielectric material, and the upper end of the metal probe is free end and extends to the waveguide
In.
8. surface wave plasma process equipment according to claim 1, which is characterized in that the medium window thickness takes
It is worth range in 2~20mm.
9. surface wave plasma process equipment according to claim 1, which is characterized in that the metal regulating part is ball
Body, cylinder or cone.
10. surface wave plasma process equipment according to claim 1, which is characterized in that multiple metals are adjusted
Part is symmetrical along the circumferential direction of the resonant cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710329633.0A CN108878243B (en) | 2017-05-11 | 2017-05-11 | Surface wave plasma processing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710329633.0A CN108878243B (en) | 2017-05-11 | 2017-05-11 | Surface wave plasma processing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108878243A true CN108878243A (en) | 2018-11-23 |
| CN108878243B CN108878243B (en) | 2020-08-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710329633.0A Active CN108878243B (en) | 2017-05-11 | 2017-05-11 | Surface wave plasma processing apparatus |
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| CN (1) | CN108878243B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109802217A (en) * | 2018-12-11 | 2019-05-24 | 北京铭安博运科技有限公司 | A kind of microwave dielectric resonator coaxially coupled |
| CN114759333A (en) * | 2022-06-14 | 2022-07-15 | 成都纽曼和瑞微波技术有限公司 | Microwave transmission device and microwave plasma equipment |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1856211A (en) * | 2005-03-30 | 2006-11-01 | 东京毅力科创株式会社 | Plasma processing apparatus and method |
| CN101099419A (en) * | 2005-05-12 | 2008-01-02 | 株式会社岛津制作所 | Surface wave excitation plasma processing system |
| CN101673655A (en) * | 2009-09-23 | 2010-03-17 | 电子科技大学 | Microwave plasma resonant cavity used for depositing diamond film |
| TW201330045A (en) * | 2011-09-30 | 2013-07-16 | Tokyo Electron Ltd | Plasma tuning rods in microwave resonator plasma sources |
| CN103779177A (en) * | 2014-01-21 | 2014-05-07 | 电子科技大学 | Medium resonant cavity for microwave plasma lamp |
| CN105430862A (en) * | 2014-09-23 | 2016-03-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Surface-wave plasma equipment |
-
2017
- 2017-05-11 CN CN201710329633.0A patent/CN108878243B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1856211A (en) * | 2005-03-30 | 2006-11-01 | 东京毅力科创株式会社 | Plasma processing apparatus and method |
| CN101099419A (en) * | 2005-05-12 | 2008-01-02 | 株式会社岛津制作所 | Surface wave excitation plasma processing system |
| CN101673655A (en) * | 2009-09-23 | 2010-03-17 | 电子科技大学 | Microwave plasma resonant cavity used for depositing diamond film |
| TW201330045A (en) * | 2011-09-30 | 2013-07-16 | Tokyo Electron Ltd | Plasma tuning rods in microwave resonator plasma sources |
| CN103779177A (en) * | 2014-01-21 | 2014-05-07 | 电子科技大学 | Medium resonant cavity for microwave plasma lamp |
| CN105430862A (en) * | 2014-09-23 | 2016-03-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Surface-wave plasma equipment |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109802217A (en) * | 2018-12-11 | 2019-05-24 | 北京铭安博运科技有限公司 | A kind of microwave dielectric resonator coaxially coupled |
| CN109802217B (en) * | 2018-12-11 | 2022-01-18 | 北京铭安博运科技有限公司 | Coaxial coupling microwave medium resonant cavity |
| CN114759333A (en) * | 2022-06-14 | 2022-07-15 | 成都纽曼和瑞微波技术有限公司 | Microwave transmission device and microwave plasma equipment |
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| CN108878243B (en) | 2020-08-21 |
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