CN101673655A - Microwave plasma resonant cavity used for depositing diamond film - Google Patents
Microwave plasma resonant cavity used for depositing diamond film Download PDFInfo
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- CN101673655A CN101673655A CN200910167734A CN200910167734A CN101673655A CN 101673655 A CN101673655 A CN 101673655A CN 200910167734 A CN200910167734 A CN 200910167734A CN 200910167734 A CN200910167734 A CN 200910167734A CN 101673655 A CN101673655 A CN 101673655A
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Abstract
The invention belongs to a resonant cavity matched with a microwave plasma depositing device so as to be used for depositing the diamond film, which includes a resonant cavity body comprising a hemispherical metal cavity and a box-shaped metal cavity, a cylindrical wave-guide input pipe and a mode conversion antenna thereof, a depositing platform arranged on the bottom plane of the box-shaped inner cavity as well as a reaction gas inlet and a vacuum pump interface which are respectively arranged on two side walls of the cavity body. The inner spherical surface in the resonant cavity is equivalent to a concave mirror; however, the bottom surface of the box-shaped metal cavity is equivalent to a flat mirror; when microwave emitted by a magnetron is radiated into the resonant cavity through the mode conversion antenna and reflected backwards and forwards between the hemispherical inner wall and the bottom surface of the box-shaped cavity, most energy is centralized into the middle part ofthe inner cavity so as to excite stable large-area plasma; therefore, the microwave plasma resonant cavity used for depositing the diamond film has the characteristics that the simple structure is simple, which can effectively reduce the size of a system matched thereof, and cooling is convenient; the concentration ratio of the regions with stronger field strength is high and the area thereof islarger; moreover, the Q value of the cavity body is high, which is beneficial to depositing a large-area diamond film and improving the quality thereof, etc.
Description
Technical field
The invention belongs to microwave plasma gas phase membrane deposition technique, the particularly a kind of and supporting resonant cavity that is used for depositing diamond film of microwave plasma CVD device.
Background technology
At present, the microwave plasma body technique obtains more and more widely application in many high frontiers.Microwave plasma CVD (MPCVD) is subjected to common attention as a kind of novel technology, is mainly used in the film coating of cutting tools, mould, wear-resisting and heat conducting material, and fields such as optical material, electronic material and transducer.
It is that the technology of the most influential plasma one of is used that the microwave plasma CVD technology prepares diamond thin.Diamond has high hardness, high thermal conductivity under the room temperature, extremely low thermal coefficient of expansion, high chemical inertness, big energy gap, acoustic propagation speed height, and very excellent mechanics, calorifics, chemistry, electricity, acoustics and the optical properties such as high transparent from the far red light district to the deep UV (ultraviolet light) district, make it have utmost point wide prospect aspect various research fields and the commercial Application.Yet natural diamond quantity rareness, people are difficult to obtain large-scale application; And the polycrystalline diamond (PCD) of high temperature, high pressure preparation is owing to contain metallic catalyst, and its size is limited simultaneously, costs an arm and a leg, and adamantine above-mentioned excellent properties can not be fully used.At this defective, people have just begun the exploration of synthesis of diamond film under low temperature, the low pressure condition in the 1950's; Up to the mid-80, along with updating of technology, diamond thin has all been obtained breakthrough at aspects such as film forming area, growth rate and film qualities, thereby the possibility of commercial Application is provided.In numerous diamond thin preparation methods, the microwave plasma CVD method is acknowledged as a kind of preparation method of most important excellent diamonds film, and it has the advantage such as plasma density height, good stability of electrodeless contaminating impurity, capacity usage ratio height, formation; In microwave plasma CVD (MPCVD) device, microwave plasma resonant cavity is its most critical part, but the plasma that ejects with it because of electromagnetic field in the resonant cavity has very strong interaction, has also increased the design difficulty of high-performance resonant cavity.Common microwave plasma resonant cavity has two kinds of cylindrical shape resonant cavity and elliposoidal resonant cavitys, and frequency is generally 915MHz or 2.45GHz (wavelength is 327.87mm or 122.45mm), is provided with the deposition table of assembling effectively for microwave energy in it; The former cavity is a hollow cylinder, and its radius is generally 90mm, is 429mm highly, and size is less, and is simple in structure, helps the cooling of system, but field intensity is stable inadequately under high power conditions, inferior field intensity district is bigger, is unfavorable for high speed deposition; And latter's cavity is a hollow ellipsoid, key dimension is the long 600mm of major axis, the long 450mm of minor axis, because of the characteristics of its structure can be at steady operation under the high power, and the coupling microwave is from a focus of ellipsoid, another focus at ellipsoid produces plasma, plasma is more concentrated, Q value (ratio of average field-strength in the field intensity that produces the plasma zone and the cavity) is than the former height, but owing in cavity, generally need to adopt quartz bell cover, under the condition of deposition equal area diamond thin, its cavity is bigger, so the package unit volume is bigger, and be unfavorable for system cools; In addition, above-mentioned resonant cavity is owing to the restriction of its design principle and structure, and the area of depositing diamond film is still less, uniformity is relatively poor.
Summary of the invention
The objective of the invention is defective at the background technology existence, a kind of microwave plasma resonant cavity that is used for depositing diamond film of research and design, to reach simplified structure, to reduce its system bulk (comparing), cooling conveniently with the device of deposition equal area diamond thin, set of regions moderate height and area that field intensity is stronger are bigger, cavity Q value is high, helps the deposition of large-area diamond thin and the purposes such as diamond thin quality that raising deposited.
Solution of the present invention is according to the principle of quasi-optics open cavity in the Fabry-perot interferometer, is the height that the modulus of resonant cavity is proportional to cavity, thereby changes the distribution of microwave electric field intensity; Make the microwave energy that produces from magnetron, after entering in the resonant cavity through the cylindrical waveguide mouth, between the bottom surface of the spill inwall of hemisphere wire chamber and box-shaped wire chamber, come back reflective, most of energy of electromagnetic field is concentrated on the medium position of box-shaped wire chamber, thereby encouraged stable large area plasma, on low cut-off mode, obtain higher Q value, be beneficial to improve the area and the uniformity thereof of institute's depositing diamond film; The present invention promptly reaches the purpose of the quality of the area of effective raising deposition of diamond thin films and film with this.Thereby microwave plasma resonant cavity of the present invention comprises the resonant cavity main body, cylindrical shape waveguide input pipe and the mode switch antenna thereof being located at the cavity top and being communicated with it, be located at the deposition table on the resonant cavity inner bottom part, be positioned at resonant cavity lower body part and reaction gas inlet that is communicated with its inner chamber and vacuum pump interface, key is that the resonant cavity main body comprises the hemisphere wire chamber and is positioned at the box-shaped metallic cavity of its underpart, deposition table is located at centre, baseplane in the box-shaped wire chamber, and reaction gas inlet and vacuum pump interface then are located at respectively on two sidewalls of box-shaped metallic cavity; The top circular hole equal diameter sealed type of the lower port of hemisphere metallic cavity and box-shaped wire chamber is fastenedly connected, cylindrical shape waveguide input pipe and hemisphere metallic cavity top seal formula are fastenedly connected, and the mode switch antenna still is located on the position, axis of cylindrical shape waveguide input pipe.
The above-mentioned resonant cavity main body of forming by hemisphere wire chamber and box-shaped metallic cavity, its inner chamber be the radius of curvature of the hemisphere wire chamber difference that deducts inner chamber height (distance of baseplane to the box-shaped wire chamber, hemisphere wire chamber top) with the ratio of its radius of curvature greater than 0 less than 1 (that is: when the radius of curvature of hemisphere wire chamber be that R, inner chamber are high during for D, 0＜(R-D)/R＜1 or 0＜1-D/R＜1).The radius of curvature of hemisphere wire chamber with the input guide wavelength λ be as the criterion, its radius of curvature R=1～4 λ.
Microwave plasma resonant cavity of the present invention is owing to the principle according to quasi-optics open cavity in the Fabry-perot interferometer, the box-shaped wire chamber that adopts the hemisphere wire chamber and be positioned at its underpart combines, the Internal Spherical Surface of hemisphere wire chamber is equivalent to concave mirror, and the bottom surface of box-shaped wire chamber is equivalent to level crossing, the microwave that sends when magnetron passes through cylindrical shape waveguide input pipe, microwave can be earlier via the mode switch aerial radiation in resonant cavity, electromagnetic wave comes back reflective between the bottom surface of hemisphere wire chamber inwall and box-shaped wire chamber, and most of electric field energy concentrated on the medium position of box-shaped wire chamber and set up stable highfield and distribute, thereby encouraged stable large area plasma.Thereby the present invention to have a resonant cavity simple in structure, can effectively reduce its system bulk, cooling is convenient, and set of regions moderate height and area that field intensity is stronger are bigger, cavity Q value is high, helps the deposition of large-area diamond thin and the characteristics such as raising of diamond thin quality.
Description of drawings
Fig. 1 is a microwave plasma resonant cavity structural representation of the present invention;
Fig. 2 is 2.45GHz for embodiment of the present invention in frequency, and power is the distribution map of the electric field (the high-frequency structure simulator is become field intensity map) on XOY plane during by 800w, and to be bright part of arc circle be strong electric field region in the centre among the figure;
Fig. 3 is 2.45GHz for embodiment of the present invention in frequency, and power is the distribution map of the electric field (the high-frequency structure simulator is become field intensity map) on the XOZ plane during by 800w, and bright curved among figure part is strong electric field region.
Among the figure: 1. cylindrical shape waveguide input pipe, 2. mode switch antenna, 3. hemisphere wire chamber, 4. box-shaped wire chamber, 5. reaction gas inlet, 6. vacuum pump interface, 7. deposition table.
Embodiment
The present embodiment microwave plasma resonant cavity: the internal diameter Ф 50mm of cylindrical shape waveguide input pipe 1, axial high 20mm, thickness of pipe wall 2mm, material are stainless steel; The bottom surface height of mode switch antenna 2 diameter Ф 10mm, high 30mm, its following end distance box-shaped wire chamber 4 is that 251.7mm, material are copper material; Hemisphere wire chamber 3 radius of curvature R 295.6mm (R=2.42 λ), inner chamber height (distance of top of chamber end face to box-shaped wire chamber 4 in the hemisphere) 221.7mm, lower port internal diameter Ф 572.42mm, thickness 2mm, material are stainless steel; Box-shaped wire chamber 4 present embodiments adopt the length of side to be that 300mm, inner chamber are high to be the square metal chamber of 50mm, and the lower port diameter of casing top center bore dia and hemisphere wire chamber 3 is identical, also be Ф 572.42mm, casing wall thickness 2mm; All be integral between cylindrical shape waveguide input pipe 1 and hemisphere wire chamber 3, hemisphere wire chamber 3 and the square metal chamber 4 by seal welding; Deposition table 7 is located at the inner bottom surface centre in square metal chamber 4, and its radius is that R50mm, thick 10mm, material also are stainless steel.
Present embodiment is the microwave source of 2.45GHz with the frequency, under the power of 800w, utilize the operation of HFSS (high-frequency structure simulator) simulator: field intensity is concentrated the most above deposition table, its area is about 200mm2; Accompanying drawing 2, accompanying drawing 3 are respectively at the distribution map of the electric field that reaches on the XOY plane on the XOZ plane.
Claims (3)
1. microwave plasma resonant cavity that is used for depositing diamond film, comprise the resonant cavity main body, cylindrical shape waveguide input pipe and the mode switch antenna thereof being located at the cavity top and being communicated with it, be located at the deposition table on the resonant cavity intracavity bottom, be positioned at resonant cavity lower body part and reaction gas inlet that is communicated with its inner chamber and vacuum pump interface, it is characterized in that described resonant cavity main body comprises the hemisphere wire chamber and is positioned at the box-shaped metallic cavity of its underpart, deposition table is located at centre, baseplane in the box-shaped wire chamber, and reaction gas inlet and vacuum pump interface then are located at respectively on two sidewalls of box-shaped metallic cavity; The top circular hole equal diameter sealed type of the lower port of hemisphere metallic cavity and box-shaped wire chamber is fastenedly connected, cylindrical shape waveguide input pipe and hemisphere metallic cavity top seal formula are fastenedly connected, and the mode switch antenna still is located on the position, axis of cylindrical shape waveguide input pipe.
2. by the described microwave plasma resonant cavity that is used for depositing diamond film of claim 1, it is characterized in that the described resonant cavity main body of being made up of hemisphere wire chamber and box-shaped metallic cavity, its inner chamber is the radius of curvature of the hemisphere wire chamber difference that deducts the inner chamber height with the ratio of its radius of curvature greater than 0 less than 1.
3. by the described microwave plasma resonant cavity that is used for depositing diamond film of claim 1, the radius of curvature that it is characterized in that described hemisphere wire chamber with the guide wavelength λ of input be as the criterion, its radius of curvature R=1～4 λ.
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| CN2009101677348A CN101673655B (en) | 2009-09-23 | 2009-09-23 | Microwave plasma resonant cavity used for depositing diamond film |
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| CN101673655B CN101673655B (en) | 2012-07-04 |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103398707A (en) * | 2013-05-14 | 2013-11-20 | 东南大学 | Three chips assembled silicon-based ultrathin micro-hemispherical resonator gyroscope and making method thereof |
| CN104164658A (en) * | 2014-08-06 | 2014-11-26 | 北京科技大学 | Ellipsoidal high-power microwave plasma diamond film deposition device |
| WO2018188406A1 (en) * | 2017-04-14 | 2018-10-18 | 太原理工大学 | Microwave resonant cavity and device for plasma chemical vapour deposition |
| CN108878243A (en) * | 2017-05-11 | 2018-11-23 | 北京北方华创微电子装备有限公司 | Surface wave plasma process equipment |
| CN112955768A (en) * | 2018-08-27 | 2021-06-11 | 麻省理工学院 | Microwave resonator readout for integrated solid state spin sensors |
| CN113151809A (en) * | 2021-04-01 | 2021-07-23 | 上海征世科技股份有限公司 | Microwave plasma processing device |
| CN114892149A (en) * | 2022-05-27 | 2022-08-12 | 哈尔滨工业大学 | Ellipsoidal MPCVD device for diamond material growth |
| CN115044885A (en) * | 2022-06-14 | 2022-09-13 | 上海征世科技股份有限公司 | MPCVD device and method for preparing high-purity CVD diamond wafer |
-
2009
- 2009-09-23 CN CN2009101677348A patent/CN101673655B/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103398707A (en) * | 2013-05-14 | 2013-11-20 | 东南大学 | Three chips assembled silicon-based ultrathin micro-hemispherical resonator gyroscope and making method thereof |
| CN103398707B (en) * | 2013-05-14 | 2015-11-18 | 东南大学 | A kind of three silica-based super-thin micro-hemispherical resonator gyroscope of assembly type and preparation method thereof |
| CN104164658A (en) * | 2014-08-06 | 2014-11-26 | 北京科技大学 | Ellipsoidal high-power microwave plasma diamond film deposition device |
| CN104164658B (en) * | 2014-08-06 | 2016-08-24 | 河北普莱斯曼金刚石科技有限公司 | A kind of elliposoidal high power microwave plasma diamond film deposition device |
| WO2018188406A1 (en) * | 2017-04-14 | 2018-10-18 | 太原理工大学 | Microwave resonant cavity and device for plasma chemical vapour deposition |
| CN108878243A (en) * | 2017-05-11 | 2018-11-23 | 北京北方华创微电子装备有限公司 | Surface wave plasma process equipment |
| CN108878243B (en) * | 2017-05-11 | 2020-08-21 | 北京北方华创微电子装备有限公司 | Surface wave plasma processing apparatus |
| CN112955768A (en) * | 2018-08-27 | 2021-06-11 | 麻省理工学院 | Microwave resonator readout for integrated solid state spin sensors |
| CN113151809A (en) * | 2021-04-01 | 2021-07-23 | 上海征世科技股份有限公司 | Microwave plasma processing device |
| CN114892149A (en) * | 2022-05-27 | 2022-08-12 | 哈尔滨工业大学 | Ellipsoidal MPCVD device for diamond material growth |
| CN115044885A (en) * | 2022-06-14 | 2022-09-13 | 上海征世科技股份有限公司 | MPCVD device and method for preparing high-purity CVD diamond wafer |
| CN115044885B (en) * | 2022-06-14 | 2023-02-10 | 上海征世科技股份有限公司 | MPCVD device and method for preparing high-purity CVD diamond wafer |
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| CN101673655B (en) | 2012-07-04 |
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