CN207966918U - A kind of mountain i section reentry type microwave cavity - Google Patents
A kind of mountain i section reentry type microwave cavity Download PDFInfo
- Publication number
- CN207966918U CN207966918U CN201820376472.0U CN201820376472U CN207966918U CN 207966918 U CN207966918 U CN 207966918U CN 201820376472 U CN201820376472 U CN 201820376472U CN 207966918 U CN207966918 U CN 207966918U
- Authority
- CN
- China
- Prior art keywords
- cavity
- inner chamber
- microwave
- chamber body
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
A kind of mountain i section reentry type microwave cavity, cavity including microwave cavity, cavity is in the heavy caliber cylindrical metal cavity that longitudinal section is convex, the inner chamber body of mountain i section is had additional in cavity, inner chamber body is the metal cavity being composed of U-shaped first inner chamber body and cylindrical second inner chamber body, the top of second inner chamber body is equipped with the deposition base station of the height-adjustable basis material for placing depositing diamond film, and the lower end of cavity is equipped with the coaxial antenna for being used for transmission conversion microwave.The structure design of the utility model is reasonable, there is bigger microwave resonance space compared with traditional microwave cavity, there is stronger microwave focusing power, more highdensity plasma can be generated, is conducive to improve film deposition rate, has microwave resonance space big, the plasma energy metric density of generation is high, adjustable, the low feature of difficulty of processing of base station height is deposited, the improvement and performance raising for MPCVD devices have a very important significance.
Description
Technical field
The utility model belongs to microwave plasma chemical vapor deposition film technical field, is related to a kind of microwave cavity,
More particularly to a kind of mountain i section reentry type microwave cavity, for microwave plasma chemical vapor deposition (MPCVD) film.
Background technology
Diamond film is high with hardness, thermal conductivity is good, coefficient of thermal expansion is small, optically and electrically has excellent performance, acoustic propagation speed
The many merits such as degree is fast, dielectric properties are good, and the diamond after doping also has excellent characteristic of semiconductor.These are excellent
The combination of performance makes it have a wide range of applications in the every field of modern technologies.
Microwave plasma chemical vapour deposition process (MPCVD) is always to be used for high quality diamond film preparation in the world
Prefered method, its advantage is that controllability and cleanliness are good, the quality for the diamond film that can be deposited is high.China's high power MPCVD skills
The development of art relatively lags behind, and deficiency is studied in terms of MPCVD unit simulation designing techniques, and under this background, system is carried out
The research of MPCVD unit simulation technologies, and Development of Novel MPCVD devices design on this basis, to promoting high quality diamond
Highly important impetus is played in the development of film deposition technique.
It is vapor-deposited in (MPCVD) diamond film technology in microwave plasma chemical, microwave cavity is microwave plasma
The core component of body chemical vapor phase growing apparatus, structure design play the development of microwave plasma chemical gas phase deposition technology
To vital effect.
The type of MPCVD device microwave cavities has quartz tube type, quartz clock bell-type, cylinder resonator formula, ellipsoid resonance
Cavate, circumference antenna resonance cavate and non-cylindrical resonant cavity type etc..Traditional microwave resonance cavity size is smaller, and microwave transmission turns
It changes and resonance space in the cavity is smaller, be unfavorable for the input of more microwave energies, to influence carrying for microwave input power
Height influences deposition rate.
Through looking into, the Chinese patent of existing Patent No. CN201710244250.3《A kind of plasma activated chemical vapour deposition
Microwave cavity》, the resonant cavity include two roof intersections isosceles triangle Boolean union after the revolving body that is formed,
The bottom edge length of side of middle isosceles triangle is 2n λ~(2n+0.5) λ, and base angle is 50 °~75 °, the bottom side length of two isosceles triangles
The center of gravity spacing of equal or difference n λ, the center of gravity of upper isosceles triangle and lower isosceles triangle is 0~4/5 λ, and wherein λ is microwave
Wavelength.Reflection and the principle of interference of electromagnetic wave is utilized in the patent, by the bottom side length, the bottom edge that adjust upper and lower isosceles triangle
Angle and centre distance between the two form strong-focusing electric field.Meanwhile raising resonant cavity focusing power and configuration are reached
The purpose of flexibility.But it is there is also microwave resonance space is little, the not high problem of deposition rate.
Therefore develop that a kind of microwave resonance space is big, the high novel microwave resonant cavity pair of the plasma energy metric density of generation
It is had a very important significance in the improvement of MPCVD devices and performance raising.
Invention content
The technical problem to be solved by the utility model is to provide the low mountain i sections of reasonable in design, difficulty of processing
Reentry type microwave cavity has microwave resonance space big, the high feature of the plasma energy metric density of generation.
Technical solution is used by the utility model solves above-mentioned technical problem：A kind of mountain i section reentry type micro-wave
Resonant cavity, includes the cavity of microwave cavity, and feature exists：The cavity is in the cylindrical gold of heavy caliber that longitudinal section is convex
Belong to cavity, the inner chamber body of mountain i section is had additional in cavity, inner chamber body is by U-shaped first inner chamber body and cylindrical second
The top of the metal cavity that inner chamber body is composed, second inner chamber body is used to place depositing diamond film equipped with height-adjustable
Basis material deposition base station, the lower end of cavity is equipped with the coaxial antenna for being used for transmission conversion microwave.
As an improvement, the inner chamber body is coaxial arrangement with outer chamber, cavity is single layer cavity, using stainless steel material system
At.
As an improvement, the first inner chamber body is the U-shaped reflection chamber of the open top of double layer hollow structure, second inner chamber
Body is located at middle part in first inner chamber body, and height-adjustable, the bottom of second inner chamber body is connected with first inner chamber body.
It improves again, the deposition base station is cylindrical type, is internally provided with the elevating mechanism for adjusting height.
It improves again, the coaxial antenna includes outer diameter and internal diameter, and microwave channel, wherein internal diameter are formed between outer diameter and internal diameter
It is supported on the bottom of inner chamber body, outer diameter is connected with the lower end of cavity.
Further, medium window corresponding with the microwave channel of coaxial antenna is equipped in the cavity, medium window is set
It sets between the lower end inner wall of cavity and the lower end of inner chamber body.
Finally, the medium window uses the passable quartz ring of microwave, the transmission transduction pathway of microwave to be transmitted for curved surface.
Compared with prior art, the utility model has the advantage of：The inner chamber body for reflection is additionally arranged in cavity, with reality
Referring now to the constraint of microwave propagation path；Coaxial antenna is connected directly with inner chamber body, to constitute support to inner chamber body；Cavity
Radius it is larger, this, which can provide enough spaces, makes microwave be formed in the interior thereof resonance, helps to inspire highdensity
Plasma, inner chamber body have been designed to that cross sectional shape mountain-shaped, effect are still the pact realized for microwave propagation path
Beam；Coaxial antenna may be designed to it is hollow, so as to using its to deposition table carry out water cooling.The utility model structure
Reasonable design has bigger microwave resonance space compared with traditional microwave cavity, there is stronger microwave focusing power, energy
It is enough to generate more highdensity plasma, be conducive to improve film deposition rate, have microwave resonance space big, generation it is equal from
Sub- energy density is high, and adjustable, the low feature of difficulty of processing of deposition base station height, improvement and performance for MPCVD devices improve
It has a very important significance.
Description of the drawings
Fig. 1 is the structural schematic diagram of the utility model embodiment；
Fig. 2 is that the mountain word section of the utility model reentries the electric-field intensity distribution figure in microwave cavity；
Fig. 3 be the utility model mountain word section microwave cavity in reaction microwave transmission direction electric field intensity figure.
Specific implementation mode
The utility model is described in further detail below in conjunction with attached drawing embodiment.
As shown in Figure 1, a kind of mountain i section reentry type microwave cavity, includes the cavity 1 of microwave cavity, inner cavity
Body, deposition base station 7 and coaxial antenna, cavity 1 are single layer vacuum metal cavity, are made of stainless steel, and cavity 1 is cut in vertical
Face is the heavy caliber cylindrical structure of convex, and the advantages of this structure is：The height for adjusting cylinder can be relied on to humorous
Vibration frequency carries out adjusting appropriate, and radius is larger, and microwave can be made to have the resonance space of bigger；Inner chamber body is co-axially located at chamber
In body 1, inner chamber body is the gold for the mountain i section being composed of U-shaped first inner chamber body 2 and cylindrical second inner chamber body 3
Belonging to cavity, first inner chamber body 2 is the U-shaped reflection chamber of the open top of double layer hollow structure, for changing microwave transmission path,
Second inner chamber body 3 is located at middle part in first inner chamber body 2, height-adjustable, for adjusting microwave resonance space and field distribution,
The bottom of second inner chamber body 3 is connected with first inner chamber body 1, and deposition base station 7 is cylindrical type, is located at the top of second inner chamber body 3,
Basis material for placing depositing diamond film, it is height-adjustable, it is internally provided with the elevating mechanism for adjusting height；
Coaxial antenna is set to the lower end of cavity 1, is used for transmission conversion microwave, and coaxial antenna includes outer diameter 4 and internal diameter 5, outer diameter 4 with it is interior
Microwave channel is formed between diameter 5, wherein internal diameter 5 is supported on the bottom of first inner chamber body 2, and outer diameter 4 is connected with the lower end of cavity 1；
The two medium windows 9 corresponding with the microwave channel of coaxial antenna in left and right are equipped in cavity 1, medium window 9 is arranged in cavity 1
Lower end inner wall and the lower end of first inner chamber body 2 between, medium window 9 uses quartz ring, and microwave 8 can pass through, and also functions to true
Empty sealing function；
When work, microwave 8 enters from 1 bottom end of cavity, and it is curved surface transmission that microwave 8, which transmits transduction pathway, and microwave 8 is through in first
After reflecting resonance occurs for cavity 2, and maximum field intensity is located at the top of second inner chamber body 3, excites plasma 6 herein, to heavy
Product film.
Fig. 2 is the electric-field intensity distribution figure that mountain word section reentries in microwave cavity after simulation calculates, can from Fig. 2
Go out, in cavity 1 of the microwave 8 via channel between coaxial antenna Jing Guo 9 feed-in of medium window, microwave is by resonance cavity outer wall and inner wall
Between transmit after enter larger cavity in, after microwave resonance, the maximum field intensity in microwave cavity come across deposition base station 7
Center at, deposition base station 7 top existence anduniquess strong electric field region, intensity is other region electric-field strengths in resonant cavity
Four times or more of degree, this will be helpful to above deposition base station 7 inspire highdensity plasma 6.
From the resonant cavity internal electric field polar plot of Fig. 3 it can also be seen that the microwave energy of incoming microwave resonance intracavitary will have
Axisymmetric, curved fashion delivering path.
The microwave cavity of the utility model is for the specific operation process of depositing diamond film：
One, forvacuum, first with vacuum pump to settling chamber's forvacuum to 0-5Pa；
Two, diamond film deposition experiment working gas used is hydrogen and methane, the bottom end gas through distribution map of the electric field
Channel inputs settling chamber；
Three, drain tap is adjusted, so that the pressure of settling chamber's gas is risen to 1kPa or more, to prevent from going out occurrence within the deposition chamber
Raw plasma；
Four, microwave power supply is opened, observes above deposition base station plasma occur, realizes film deposition；
Five, the microwave power of input MPCVD devices is gradually increased, and the gas pressure of settling chamber is continuously improved in the process
Power.
The microwave plasma CVD device of the microwave cavity of the utility model is compared with traditional microwave cavity, tool
There is bigger microwave resonance space, there is stronger microwave focusing power, so more highdensity plasma can be generated, favorably
In raising film deposition rate.Therefore the cost using the plasma CVD equipment of such reentry type microwave cavity and processing
Difficulty all will be relatively low, it will have actual application value in diamond film deposition technology.The reentry type microwave cavity of this patent,
Reference is provided for the design and manufacture of the novel MPCVD devices of 2.45GHz or 915MHz and structure improvement.
The above is only the preferred embodiment of the utility model, it is noted that for the common skill of the art
For art personnel, without deviating from the technical principle of the utility model, several improvements and modifications can also be made, these change
The scope of protection of the utility model is also should be regarded as into retouching.
Claims (7)
1. a kind of mountain i section reentry type microwave cavity, includes the cavity of microwave cavity, feature exists：The cavity is in
Longitudinal section is the heavy caliber cylindrical metal cavity of convex, and the inner chamber body of mountain i section is had additional in cavity, and inner chamber body is
The metal cavity being composed of U-shaped first inner chamber body and cylindrical second inner chamber body, the top of second inner chamber body is equipped with
The deposition base station of the height-adjustable basis material for placing depositing diamond film, the lower end of cavity, which is equipped with to be used for transmission, to be turned
Change the coaxial antenna of microwave.
2. i section reentry type microwave cavity in mountain according to claim 1, it is characterised in that：The inner chamber body with it is outer
Cavity is coaxial arrangement, and cavity is single layer cavity, is made of stainless steel.
3. i section reentry type microwave cavity in mountain according to claim 2, it is characterised in that：The first inner chamber body
For the U-shaped reflection chamber of the open top of double layer hollow structure, second inner chamber body is located at middle part in first inner chamber body, and height can
It adjusts, the bottom of second inner chamber body is connected with first inner chamber body.
4. i section reentry type microwave cavity in mountain according to claim 1, it is characterised in that：The deposition base station is
Cylindrical type is internally provided with the elevating mechanism for adjusting height.
5. the mountain i section reentry type microwave cavity according to Claims 1-4 any claim, feature exist
In：The coaxial antenna includes outer diameter and internal diameter, and microwave channel is formed between outer diameter and internal diameter, and wherein internal diameter is supported on inner chamber body
Bottom, outer diameter is connected with the lower end of cavity.
6. i section reentry type microwave cavity in mountain according to claim 5, it is characterised in that：It is equipped in the cavity
Medium window corresponding with the microwave channel of coaxial antenna, medium window are arranged under the lower end inner wall and inner chamber body of cavity
Between end.
7. i section reentry type microwave cavity in mountain according to claim 6, it is characterised in that：The medium window is adopted
It is transmitted for curved surface with the transmission transduction pathway of the passable quartz ring of microwave, microwave.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820376472.0U CN207966918U (en) | 2018-03-13 | 2018-03-13 | A kind of mountain i section reentry type microwave cavity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820376472.0U CN207966918U (en) | 2018-03-13 | 2018-03-13 | A kind of mountain i section reentry type microwave cavity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207966918U true CN207966918U (en) | 2018-10-12 |
Family
ID=63725581
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820376472.0U Active CN207966918U (en) | 2018-03-13 | 2018-03-13 | A kind of mountain i section reentry type microwave cavity |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207966918U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109781748A (en) * | 2019-01-18 | 2019-05-21 | 西南大学 | Microwave remote sensor based on differential type substrate integrated waveguide reentrant cavity and microflow control technique |
| CN110306171A (en) * | 2019-06-28 | 2019-10-08 | 郑州磨料磨具磨削研究所有限公司 | It is a kind of to improve the settling chamber and MPCVD device that gas is distributed |
-
2018
- 2018-03-13 CN CN201820376472.0U patent/CN207966918U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109781748A (en) * | 2019-01-18 | 2019-05-21 | 西南大学 | Microwave remote sensor based on differential type substrate integrated waveguide reentrant cavity and microflow control technique |
| CN110306171A (en) * | 2019-06-28 | 2019-10-08 | 郑州磨料磨具磨削研究所有限公司 | It is a kind of to improve the settling chamber and MPCVD device that gas is distributed |
| CN110306171B (en) * | 2019-06-28 | 2023-09-08 | 郑州磨料磨具磨削研究所有限公司 | Deposition chamber with improved gas distribution and MPCVD device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108624870B (en) | Tunable round-parabolic cavity type high-power microwave plasma chemical vapor deposition device | |
| CN207966918U (en) | A kind of mountain i section reentry type microwave cavity | |
| CN105122951A (en) | Plasma generator using dielectric resonator | |
| CN101673655B (en) | Microwave plasma resonant cavity used for depositing diamond film | |
| CN112410751B (en) | Oval microwave plasma diamond film deposition device | |
| CN211947216U (en) | Microwave plasma chemical vapor deposition device | |
| CN101864560B (en) | High power microwave plasma diamond film deposition device | |
| CN103236390A (en) | Diamond energy transmission window for short millimeter wave traveling tubes and manufacturing method of diamond energy transmission window | |
| CN106835070B (en) | Microwave plasma CVD diamond reaction unit | |
| CN103526187A (en) | Large-area microwave plasma chemical vapor deposition system | |
| CN109195299A (en) | A kind of periphery wave plasma generating device | |
| CN106987827A (en) | Plasma activated chemical vapour deposition microwave cavity and device | |
| CN114438473A (en) | High-power microwave plasma diamond film deposition device | |
| JPH05239656A (en) | Method for forming plasma and apparatus therefor | |
| CN106505280A (en) | A kind of millimeter wave multi-frequency multi-mode mode excitation device | |
| CN108315818A (en) | Single-crystal diamond synthesizer and method | |
| US20230260756A1 (en) | Multi-port Phase Compensation Nested Microwave-plasma Apparatus for Diamond Film Deposition | |
| CN116970922A (en) | MPCVD device and application thereof | |
| CN208889854U (en) | A kind of dual-circular-polarifeedon feedon source antenna | |
| CN208167155U (en) | Single-crystal diamond synthesizer | |
| CN107858667B (en) | Small-sized ellipsoid plasma reaction chamber and manufacturing method thereof | |
| RU2595156C2 (en) | Microwave plasma reactor for gas-phase deposition of diamond films in gas flow (versions) | |
| JP7438136B2 (en) | Wide range microwave plasma CVD equipment and its growth method | |
| CN108588821A (en) | Microwave plasma CVD device and leak source detection method | |
| CN109509969B (en) | Microwave antenna device for exciting variable negative dielectric constant environment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |