CN101119609B - Narrow slit and large slit combination type microwave plasma reaction cavity - Google Patents
Narrow slit and large slit combination type microwave plasma reaction cavity Download PDFInfo
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- CN101119609B CN101119609B CN2007101216573A CN200710121657A CN101119609B CN 101119609 B CN101119609 B CN 101119609B CN 2007101216573 A CN2007101216573 A CN 2007101216573A CN 200710121657 A CN200710121657 A CN 200710121657A CN 101119609 B CN101119609 B CN 101119609B
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Abstract
The present invention relates to a narrow gap-big gap combined microwave plasma reaction cavity, belonging to microwave plasma excitation technique field. The reaction comprises a vacuum column shape reaction cavity which is arranged vertically, and the upper part and the lower part of the reaction cavity are both sealed by a demountable flange. An annular wave guide with a rectangular-shaped cross section is winded in the middle part of the reaction cavity. The inner wall of the annular wave guide is coincided with the outer wall of the cavity. The inner wall of the annular wave guide is opened with a narrow gap which is corresponding to the wave node quantity of the standing wave inside the annular wave guide. The narrow gap is positioned at the standing wave node. The outer wall of the annular wave guide is opened with a through hole which is used for connecting with the drop-leaf mode wave guide switch or with the coupled antenna. The present invention is characterized in that the inner wall of the annular wave guide is opened with a big gap which is used for forming a symmetric high field inside the reaction cavity, and the high filed is strongest in the middle and then decreased periphery outward gradually; and the high filed is complemented with the electric field formed by the narrow gap to make the electric field is evenly distributed inside the reaction cavity. The present invention has the advantages of effectively improving the distribution of the electric field, producing more even plasma which can also exist inside the middle of the cavity.
Description
Technical field
The invention belongs to microwave plasma excitated technical field, particularly be used to produce the reaction chamber structural design of large area microwave plasma.
Background technology
Plasma has very strong practical value in fields such as industry such as new material, microelectronics and biological studies, particularly utilize the mode of microwave excited plasma, relative other plasma exciatiaon mode, plasma exist the space bigger, charged particle densities is higher, and very big application extension space is arranged.Large tracts of land (large volume) microwave plasma particularly, the use value on related industries is higher.
Microwave plasm reaction cavity is general to adopt microwave mode single or that mix to make plasmoid result from the inside of the different cavity of structure, because the structure difference, the area of the plasma of generation is also inequality.And the existing reaction chamber that is used to produce large area microwave plasma, it has mainly utilized the diffraction of slot antenna to microwave, is referred to as the slit reaction chamber.The structure of this type of microwave plasm reaction cavity and excitation principle such as Fig. 1, shown in 2, this reaction chamber comprises: at cylindrical reaction cavity 2, the periphery of 22 (present ripe cavity is cylindrical substantially) is surrounded with disc waveguide 1,21, at the total position 3 of the combination of disc waveguide and reaction chamber, 28 (disc waveguide inwalls, be the reaction chamber outer wall simultaneously), size according to the microwave waveguide wavelength is punished the corresponding with it slit 4 of cloth at disc waveguide standing wave node, 24 (eight slits shown in the figure), the node of the equal corresponding standing wave 26 of each slit location, 27 are the disc waveguide center line; Have circular hole 5,25 on the disc waveguide outer wall 29.Importing the microwave energy in the disc waveguide into by slit, reaction chamber forms surface wave, activated plasma.Although the plasma area that this reaction chamber produces is bigger, but because the electric field that the slot antenna diffraction produces mainly concentrates near the slit, electric field is generally less in the cavity centre, and microwave plasma excitated general dependence electric field action, therefore, than under the hyperbar (＞10
4Pa) plasma that forms of cavity focuses mostly near slit, is difficult in the cavity centre and forms, and causes in the chamber plasma distribution inhomogeneous.This distribution inhomogeneous will inevitably be limited the use value of microwave plasma, and therefore, the distribution how research enlarges microwave electric field makes plasma distribution even, is very necessary.
Summary of the invention
The objective of the invention is in order to overcome in the existing slit reaction chamber deficiency that non-uniform electric causes.A kind of slit and large slit combination type microwave plasma reaction cavity are proposed, it improves on the basis of former slit microwave plasm reaction cavity, in disc waveguide additional designs the structure of big seam, make it to match with the structure of slit, effectively improved Electric Field Distribution, the plasma that produces is more even, also can exist in the cavity centre.
Technical scheme of the present invention is as follows: by the detachable airtight vertical placement hollow cylinder reaction cavity of flange, at the cavity middle part, be surrounded with the disc waveguide that a cross section is a rectangle about comprising, the disc waveguide inwall overlaps with chamber outer wall; Digging on the disc waveguide inwall has and the corresponding slit of disc waveguide standing internal wave node number, and the position of slit is just at standing wave node place; The disc waveguide outer wall has and is used for and the through hole (microwave transmits in disc waveguide from through hole by the mode switch waveguide) that links to each other of circumference mode switch waveguide (perhaps coupled antenna); It is characterized in that, on the disc waveguide inwall, also have big seam, be used for forming middle part symmetrical highfield maximum, that reduce gradually to the periphery at reaction chamber, the electric field complementation with slit forms is evenly distributed the reaction chamber internal electric field.
Big seam can be opened the head end when microwave just enters disc waveguide, also can open at corresponding with it end, but also two ends is all dug.Should preferably be on the line and extended line thereof at through hole center and cavity center at big center of stitching
The center of the center of cavity, the center of disc waveguide and slit and big seam is in same horizontal plane.
Above-mentioned whole cavity is selected the less metal material of microwave absorbing is made.
Principle of the present invention is: the process of microwave transmission is: the microwave energy of power source output, earlier by the standard rectangular waveguide, after normal component such as circulator, pin adjuster, directional coupler, short-circuit plunger, import disc waveguide into by circumference conversion waveguide, enter reaction cavity by slit and big seam again and form electric field.Go in the reaction chamber by the slits transmit of disc waveguide inwall, make a certain plane at reaction chamber middle part near slit, form high electric field, because slit is for to be evenly distributed along the reaction chamber outer wall, then the high electric field region of Xing Chenging easily in the form of a ring, and also be distributed in the periphery on this plane in the reaction chamber, the centre electric field is very low.Microwave also is conveyed in the reaction chamber by big seam, forms middle part symmetrical highfield maximum, that reduce gradually to the periphery on this plane of reaction chamber, with the electric field complementation of slit formation.Electric field acting in conjunction under this electric field and the slit effect makes in the chamber the whole electric field value on this plane higher, and distributing becomes evenly, helps evenly exciting and distributing of plasma.And this electric field that big seam forms can be by big seam the parameters such as size, microwave frequency of size and reaction chamber cooperate and obtain optimization.
The concrete size of slit, big seam, disc waveguide etc. in the cavity is different and different according to the frequency of the standing wave number in the disc waveguide in the design, microwave transmission.The girth of disc waveguide center line is generally the integral multiple of waveguide standing internal wave wavelength.The cross sectional dimensions of disc waveguide is close with the used standard rectangular waveguide of this frequency microwave of transmission.Slit is generally highly half of disc waveguide with the height of big seam, and the width of big seam and the width of disc waveguide cross section are approaching.Concrete size can be by the electromagnetic theory estimation and by the professional software simulation optimization.
Innovation part of the present invention is to propose the structure that slit matches with big seam, this structure, and the uniformity that the reaction chamber internal electric field is distributed improves, and remedies the deficiency of the reaction cavity that only contains narrow slit structure.In actual applications, as long as the center of the big seam of digging on the disc waveguide inwall is at through hole center and cavity center (during the cavity horizontal positioned, this center is the cavity axle center with through hole center same level face) line and extended line on, the level of perhaps big seam center and this line and extended line thereof or vertical range are in half standing wave wavelength, big seam shape is generally rectangle, also can be symmetrical structures such as circle, ellipse, can both make whole Electric Field Distribution be improved significantly.
The size design of cavity of the present invention, the number of slit are selected, choosing etc. of microwave transmission device belongs to mature technology, are not this patent content that needs protection.
Beneficial effect of the present invention:
The present invention on the inwall of disc waveguide, additionally is provided with a kind of structure of big seam based on existing slit microwave plasm reaction cavity again, acting in conjunction by slit and big seam, the reaction chamber internal electric field is evenly distributed, and the plasmoid distribution enlarges, and helps commercial Application.
Description of drawings
Fig. 1 is the schematic appearance of common 8 slit reaction chambers.
Fig. 2 is the profile of common 8 slit reaction chamber central planes.
Fig. 3 is the profile of reaction chamber central plane in the embodiments of the invention.
Fig. 4 is the reaction chamber internal electric field action principle figure of present embodiment.
Fig. 5 is reaction chamber internal electric field design sketch and the common 8 slit reaction chamber internal electric field design sketchs that embodiment calculates by computer; Wherein (a) is common 8 slit reaction chamber internal electric field design sketchs, (b) is the reaction chamber internal electric field design sketch of present embodiment.
Embodiment
The invention will be further described below in conjunction with drawings and Examples.
A slit that the present invention proposes and an example structure of large slit combination type microwave plasma reaction cavity are as shown in Figure 3.With the input of 2.45GHz microwave frequency, reaction cavity 32 is the hollow cylinder of vertically placing in the present embodiment, up and down by the detachable airtight (not shown) of flange.At the cavity middle part, being surrounded with a cross section is the disc waveguide 31 of rectangle, and disc waveguide inwall 38 overlaps with the reaction cavity outer wall; Digging on the disc waveguide inwall has eight slits 34 corresponding with the node number of four standing waves in the disc waveguide, and the position of slit is just at standing wave node place; Disc waveguide 31 outer walls have a through hole 35, and this through hole links to each other with circumference mode switch waveguide (perhaps coupled antenna), and microwave transmits in disc waveguide from through hole by the mode switch waveguide; End in disc waveguide 31 also has big seam 33.Cylindrical reaction cavity 32 and disc waveguide 31 are by the brass manufacturing.
The cross section of the disc waveguide of present embodiment is a rectangle, and its standard rectangular waveguide (WR430) cross sectional dimensions to microwave transmission is similar.In disc waveguide, microwave is with TE
10Mode propagation, as calculated, the standing wave wavelength is about 15.5cm, and corresponding disc waveguide center line girth is about 62cm, so the average diameter of disc waveguide is about 20cm.The reaction chamber diameter is between 13～14cm, and the wide 15mm of the high 100mm of slit stitches the wide 50mm of high 100mm greatly.
The reaction chamber internal electric field action principle of present embodiment as shown in Figure 4, among the figure, the microwaves in the disc waveguide 41 will be by slit 44 with TE
41Pattern 46 enters in the reaction chamber 42.And because the restriction of reaction chamber diameter, the microwave mode that enters in the reaction chamber 42 by big seam 43 is mainly TE
11, TM
01Deng low order axial symmetry mould 47, the higher mode major part is cut off, and can not enter cavity, therefore, will form TE in cavity
11, TM
01And TE
41Pattern is main mixing mould, and TE
41Mould forms than highfield near slit 44, and successively decreases TE to the center, chamber
11, TM
01Pattern forms than highfield in the cavity center, and outwards successively decreases, and the stack of several electric fields makes whole electric field more even just.
Fig. 5 calculates reaction chamber internal electric field design sketch for computer, and wherein: (a) being the design sketch of common eight slit reaction chambers, (b) is the reaction chamber design sketch of present embodiment.Contrast the reaction chamber of two seam combinations of common eight slit reaction chambers and present embodiment, can obviously find out of the improvement effect of the structure of invention the chamber internal electric field.Big seam and slit are in conjunction with in the cavity, and relative dimensions is through behind the simulation optimization, and big seam partially overlaps with the slit of its both sides, shows as a big seam and six slits in the drawings.As seen from the figure, in the common large area microwave plasma cavity of eight slits is only arranged, the high value zone of electric field (height of representing electric field value among the figure with the depth of grey) concentrate near the slit and disc waveguide in, be unfavorable for the acquisition of cavity centre plasma, and the cavity body structure of big seam of the present invention and slit combination, the high value of the electric field that obtains zone is in whole cavity, and the cavity internal electric field is evenly distributed, surface area electric field difference more than 2/3 helps to obtain plasma relatively uniformly in 30%.Simultaneously, the disc waveguide internal electric field is lower, and the conversion efficiency of energy in the chamber is higher.
This embodiment has pointed out the improvement effect of the cavity body structure of two kinds of seam cooperations to electric field, and this structure helps the acquisition of homogeneous plasma.Utilize the principle of this combination, can design different slit numbers and the big cavity body structure that stitches combination.Because slit number, cavity size all can change, the electric field patterns that produces might not be identical with example, but, should belong to the range of structures that the present invention is contained as long as the comprehensive electric field in the reaction chamber is to rely on slit and big synergistic effect of stitching the electric field that produces that its uniformity is improved.
Claims (3)
1. slit and large slit combination type microwave plasma reaction cavity, comprise up and down by the detachable airtight vertical placement hollow cylinder reaction cavity of flange, at the cavity middle part, be surrounded with the disc waveguide that a cross section is a rectangle, the disc waveguide inwall overlaps with chamber outer wall; Digging on the disc waveguide inwall has and the corresponding slit of disc waveguide standing internal wave node number, and the position of slit is at standing wave node place; The disc waveguide outer wall has and is used for and a through hole that circumference mode switch waveguide or coupled antenna link to each other; It is characterized in that, on the disc waveguide inwall, also have big seam, be used for forming middle part symmetrical highfield maximum, that reduce gradually to the periphery at reaction chamber, the electric field complementation with slit forms is evenly distributed the reaction chamber internal electric field.
2. reaction chamber according to claim 1 is characterized in that the center of this big seam is on the line and extended line thereof at through hole center and cavity center.
3. reaction chamber according to claim 1 is characterized in that this big seam is shaped as rectangle, circle or oval symmetrical structure.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101216573A CN101119609B (en) | 2007-09-12 | 2007-09-12 | Narrow slit and large slit combination type microwave plasma reaction cavity |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101216573A CN101119609B (en) | 2007-09-12 | 2007-09-12 | Narrow slit and large slit combination type microwave plasma reaction cavity |
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| CN101119609A CN101119609A (en) | 2008-02-06 |
| CN101119609B true CN101119609B (en) | 2011-03-30 |
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| CN2007101216573A Expired - Fee Related CN101119609B (en) | 2007-09-12 | 2007-09-12 | Narrow slit and large slit combination type microwave plasma reaction cavity |
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102080619B (en) * | 2010-12-03 | 2012-05-23 | 清华大学 | Engine ignition device on basis of microwave plasma |
| US9330889B2 (en) * | 2013-07-11 | 2016-05-03 | Agilent Technologies Inc. | Plasma generation device with microstrip resonator |
| CN106061090B (en) * | 2016-05-31 | 2019-03-12 | 吉林大学 | A kind of secondary coupled microwave plasma reformer |
| CN108811290A (en) * | 2017-04-28 | 2018-11-13 | 北京北方华创微电子装备有限公司 | Plasma generating device and semiconductor equipment |
| CN109219226B (en) * | 2017-07-06 | 2023-01-24 | 北京北方华创微电子装备有限公司 | Plasma generating device |
| CN108770175B (en) * | 2018-05-25 | 2019-07-16 | 中国科学院微电子研究所 | Micro-pore micro-nano structure double-coupling resonant cavity for microwave plasma generating device |
| CN108770174B (en) * | 2018-05-25 | 2019-07-19 | 中国科学院微电子研究所 | Microwave plasma generating device with micro-pore micro-nano structure double-coupling resonant cavity |
| CN109195299B (en) * | 2018-10-31 | 2020-09-11 | 上海工程技术大学 | Cylindrical surface wave plasma generating device |
| CN112888134B (en) * | 2021-01-19 | 2024-03-08 | 成都奋羽电子科技有限公司 | Microwave plasma generating device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5517085A (en) * | 1992-10-23 | 1996-05-14 | Jurgen Engemann | Apparatus including ring-shaped resonators for producing microwave plasmas |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5517085A (en) * | 1992-10-23 | 1996-05-14 | Jurgen Engemann | Apparatus including ring-shaped resonators for producing microwave plasmas |
Non-Patent Citations (1)
| Title |
|---|
| 苏小保，邬钦崇，万元熙.环形波导等离子体源阻抗特性的研究.真空与低温.1997,3(4),192-194. * |
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| CN101119609A (en) | 2008-02-06 |
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