CN108770174B - Microwave plasma generating device with micro-pore micro-nano structure double-coupling resonant cavity - Google Patents
Microwave plasma generating device with micro-pore micro-nano structure double-coupling resonant cavity Download PDFInfo
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- CN108770174B CN108770174B CN201810521198.6A CN201810521198A CN108770174B CN 108770174 B CN108770174 B CN 108770174B CN 201810521198 A CN201810521198 A CN 201810521198A CN 108770174 B CN108770174 B CN 108770174B
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- 239000002086 nanomaterial Substances 0.000 title claims abstract description 41
- 238000010168 coupling process Methods 0.000 title claims abstract description 17
- 238000005859 coupling reaction Methods 0.000 title claims abstract description 17
- 239000011148 porous material Substances 0.000 title 1
- 239000011797 cavity material Substances 0.000 claims abstract description 50
- 239000002184 metal Substances 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 230000008878 coupling Effects 0.000 claims abstract description 14
- 230000002708 enhancing effect Effects 0.000 claims abstract description 8
- 230000000737 periodic effect Effects 0.000 claims abstract description 6
- 230000002093 peripheral effect Effects 0.000 claims abstract description 5
- 239000010931 gold Substances 0.000 claims description 4
- 239000000523 sample Substances 0.000 claims description 4
- 229910001369 Brass Inorganic materials 0.000 claims description 3
- 239000003708 ampul Substances 0.000 claims description 3
- 239000010951 brass Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010445 mica Substances 0.000 claims description 3
- 229910052618 mica group Inorganic materials 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract description 4
- 238000003491 array Methods 0.000 abstract 1
- 210000002381 plasma Anatomy 0.000 description 37
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/461—Microwave discharges
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
Abstract
The microwave plasma generating device comprises an outer cavity and a plurality of micro-hole/micro-nano structure double-coupling resonant cavities arranged in the outer cavity, wherein the resonant cavities comprise a cylindrical cavity, micro-hole arrays formed by a plurality of micro-holes are uniformly distributed on the peripheral wall of the cylindrical cavity, the diameter of each micro-hole is odd times of the wavelength, a metal micro-nano structure is arranged on the inner wall of the cavity, the periodic size of the metal micro-nano structure is lambda/n, lambda is the incident wavelength, and n is the refractive index of a resonant cavity material. The invention reduces the loss of a guide mode and a leakage mode by optimally designing a double-coupling resonance mode, achieves the aim of enhancing the resonance in a fixed area to the maximum extent, can improve the uniformity of the plasma, and can improve the absorption loss problem on the premise of ensuring the optical coupling and field space local enhancement characteristics, and in addition, the temperature of the plasma can be effectively controlled by independently controlling a plurality of resonant cavities.
Description
Technical field
The invention belongs to plasma fields, and in particular to a kind of with the micro- of the double coupled resonators of micropore/micro-nano structure
Wave plasma producing apparatus.
Background technique
Microwave plasma generation device is widely used in semi-conductor industry.Resonant cavity and coupling device are microwave plasmas
The key components of body generating device.Plasma required for gas resonance generates under electromagnetic field, needs resonant cavity and coupling
It attaches together and sets to form stringent matching, the two devices are that stringent size is needed to require.
It is common it is microwave plasma excitated rely primarily on higher electric field strength, and meet and generate large area uniform electric field
It is required that reaction cavity fully rely on engineer and be difficult, existing microwave plasma generation device there are low efficiency, uniformly
Property it is poor the problems such as, and the risk for be easy to causeing operating temperature too high or too low using single discharge cell.
Summary of the invention
In order to solve the problems in the existing technology, the invention proposes one kind to have the double couplings of micropore/micro-nano structure
The microwave plasma generation device of resonant cavity can produce uniform plasma.
In order to achieve the above object, the invention adopts the following technical scheme:
A kind of microwave plasma generation device with the double coupled resonators of micropore/micro-nano structure, including outer chamber and
Setting is in the double coupled resonators of the intracorporal multiple micropore/micro-nano structures of the exocoel, wherein the resonant cavity includes one cylindrical
Cavity is uniformly distributed the microwell array formed by multiple micropores on the peripheral wall of the circular cylindrical cavity, and the diameter of the micropore is
The odd-multiple of wavelength, has metal micro-nanostructure on the inner wall of the cavity, and the microwell array is formed with metal micro-nanostructure
Double coupled structures are to realize resonance enhancing and adjustable, and the periodic dimensions of the metal micro-nanostructure are λ/n, and λ is incident wavelength,
N is the refractive index of resonance cavity material.
Preferably, 3/4 integral multiple of the Zhou Changwei operation wavelength of the circular cylindrical cavity, resonance occur in the 1st surprise
On mould.
Preferably, the metal micro-nanostructure is protrusion, recess or the grating of periodic arrangement.
Preferably, the metal micro-nanostructure is grating, including wide equidistant parallel slits.
Preferably, the circular cylindrical cavity is made of mica or ceramic material, and the coat of metal is gold or brass
Preferably, the resonant cavity is arranged in a linear, and is connected respectively by double-layer coaxial cable with a microwave generator.
Preferably, the double-layer coaxial cable wraps up a coupling probe, one end of the double-layer coaxial cable with it is described micro-
Wave producer is connected, and the other end is inserted into the double coupled resonators of the micropore/micro-nano structure.
Preferably, the outer chamber is quartz ampoule.
Preferably, the microwave plasma generation device further includes the objective table being arranged in outer chamber, the loading
The lower section of the double coupled resonators of the micropore/micro-nano structure is arranged in platform.
Preferably, the objective table is rotatable and liftable.
Preferably, visible observation hole and pyrometer are provided on the outer chamber close to objective table.
Compared with prior art, the invention has the following advantages that
(1) present invention is reached by the double coupled resonance modes of optimization design to reduce the loss of guidance mould and tunnelling ray
Fixed area resonance utmostly enhances and adjustable purpose, and can improve the uniformity of plasma, can make plasma temperature
Degree oxidizing temperature is up to 1000 DEG C, and the plasma discharge time is adjustable, can preferably realize substep plasma oxidation technique；
(2) metal plate micropore of the present invention is using double coupled structures, before guaranteeing optical coupling and field space local enhancing characteristic
It puts, absorption loss problem can be improved；
(3) multiple resonant cavity independent controls can effectively control the temperature of plasma.
Detailed description of the invention
Fig. 1 is the distribution and the relational graph of transmitting enhancement factor of resonance intra-cavity energy；
Fig. 2 is the double coupled resonators of micropore/micro-nano structure of the embodiment of the present invention；
Fig. 3 is microwave plasma generation device of the invention.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Attached drawing, the present invention is described in further detail.
Energy in resonant cavity is divided into F-P and goes out emission mode, bootmode, leakage mode, absorption mode, wherein only F-P
Mould can be extracted by outgoing, and other three parts all lose in varying degrees, this is very big waste for energy.Institute
With the design of resonant cavity must reduce the energy loss of intracavitary non-outgoing mould.Meanwhile to reach specified region resonance enhancing, it is humorous
The design of vibration chamber is just even more important.The present invention is by the double coupled resonance modes of optimization design, to reduce guidance mould and tunnelling ray
Loss, achievees the purpose that utmostly to enhance in fixed area resonance.
Intracavitary mode distribution and the relationship of transmitting enhancement factor are as shown in Figure 1.According to coupled resonance mechanism, directly adopt
Intracavitary outgoing wave is the incidence wave of gaseous plasma.
The present invention reduces the loss of outgoing mode of energy in resonant cavity, reaches overall radiation energy by adjusting each parameter
It in the purpose of fixed area enhancing, that is, is not only F-P and goes out the corresponding kx of emission mode nearby to have a very high light intensity, bootmode and let out
Also there are energy spikes at the corresponding k of stripping pattern formula；Metal plate micropore guarantees optical coupling and field space local using double coupled structures
Under the premise of enhancing characteristic, absorption loss problem can be improved.
As shown in Fig. 2, the present invention provides a kind of double couplings of micropore/micro-nano structure for microwave plasma generation device
Resonant cavity, including a circular cylindrical cavity are closed, is uniformly distributed the microwell array formed by multiple micropores on the peripheral wall of circular cylindrical cavity,
There is metal micro-nanostructure on the inner wall of the circular cylindrical cavity.
Resonance cavity material uses mica or ceramic material, and dielectric constant 9-10, refractive index 1.5-2.0 are anti-
Only internal layer aoxidizes, and metal micro-nanostructure material uses Au or brass.Metal micro-nanostructure is the microstructure of periodic arrangement,
It can be protrusion, recess or grating etc., in an embodiment of the present invention, metal micro-nanostructure uses optical grating construction, by wide
Equidistant parallel slits period composition.The periodic dimensions of metal micro-nanostructure are λ/n, and wherein λ is incident wavelength, and n is resonance
The refractive index of cavity material can prevent microwave energy not to be saturated into metal and dielectric surface or be absorbed.Metal micro-nanostructure
It can be formed by conventional semiconductor technology, such as after forming the coat of metal, then carry out photoetching.
Average mark is furnished with multiple micropores on the peripheral wall of resonant cavity, and the size of micropore is the odd-multiple of wavelength, respectively corresponds
The node of wave microwave standing wave radiates microwave energy as much as possible into reaction cavity by micropore.
Energy density in resonant cavity is bigger, then the microwave electric field intensity generated is bigger, therefore the gold with holes using both sides
Belong to plate and microwave is isolated, being formed by micropore resonant cavity can isolate microwave, but not separation gas, and microwave can be made in specified area
Domain increases, and the microwave of enhancing is leaked out by micropore, makes gas plasma.
The size design of the double coupled resonators of micropore/micro-nano structure is strict with the whole of the 3/4 of its week a length of operation wavelength
Several times, and resonance is conducive to microwave plasma excitated process on the 1st odd mould.
The coat of metal can make internal leakage mode interact with the metallic film surface mode for being produced on device surface,
Coupled resonance is generated at resonance cavity material and metal micro-nanostructure, makes the free electricity of incidence wave and metal surface in leakage mode
Son occurs to be converted into coupling SP wave (radiation mode) with the SP wave (non-radiating mode) that frequency vibration is dissipated one's fortune raw, even if leakage mode enters
Ejected wave is converted into the coupling SP wave of coupling SP mode, is converted by this mode and energy, under SP coupled resonance mode
Light just can obtain enhancement effect with tunnel and in resonance wave strong point.This radiation intensification at least can be improved 2-3 times.
As shown in figure 3, the present invention provides a kind of microwave plasma generation device, including multiple micropore/micro-nano structures
Double coupled resonators 1, the double coupled resonators 1 of micropore/micro-nano structure are arranged in outer chamber 2.Outer chamber 2 can be quartz ampoule,
Sealing and isolation for working space (reaction chamber).The internal diameter of outer chamber 2 can be 100-150mm.Multiple micropores/micro-nano knot
The double coupled resonators 1 of structure are arranged in a linear, and are connected respectively by double-layer coaxial cable 3 with a microwave generator 4.Double-layer coaxial electricity
Cable 3 wraps up a coupling probe, and one end of double-layer coaxial cable 3 is connected with microwave generator 4, and the other end is inserted into micropore/micro-nano knot
In the double coupled resonators 1 of structure.Double-layer coaxial cable 3 is visited in one end of the double coupled resonators 1 of insertion micropore/micro-nano structure, coupling
Needle stretches out double-layer coaxial cable 3.Microwave generator 4 is placed in the double coupled resonators 1 of multiple micropore/micro-nano structures with disc approach
Middle position can be used for adjusting the length and resonance frequency of reaction chamber.
Reaction chamber system is the critical component of device operation, for guarantee the uniformity of microwave feed-in reaction chamber, symmetry and
The convenience of processing, reaction cavity are designed as cylinder, to excite plasma.
Microwave input power can be continuously adjusted within the scope of 800w-2000w, excite the microwave frequency of microwave plasma
Adjustable extent is 2.4-2.5GHz, and sweeping steps are set as 0.1MHz.
Every double-layer coaxial cable 3 can use the coaxial cable of 10cm.
Objective table 5 is provided in outer chamber 2, objective table 5 is arranged under the double coupled resonators 1 of micropore/micro-nano structure
Side, objective table 5 is rotatable and liftable, diameter can be 4-6inch.It is set on the outer wall close to the outer chamber 2 of objective table 5
It is equipped with pyrometer 6 and visible observation hole 7, the intracorporal reactiveness of chamber can be monitored at any time.It can be set on the outer wall of outer chamber 2
Multiple pyrometers 6.
One end of outer chamber 2 is provided with air inlet 8, and the other end is provided with gas outlet 9 and appliance doors 10.
When generating microwave plasma, substrate 11 to be processed can be placed on objective table 5, be passed through from air inlet 8
Gas, subsequent start-up microwave plasma generation device, the reaction zone 12 above substrate 11 generates plasma, to substrate 11
Carry out corona treatment.
The operating temperature of microwave plasma generation device can be 400-1000 DEG C, the corresponding plasma discharge time
400s-1000s, cavity air pressure are 400mTorr-1000mTorr.
In one embodiment of the invention, microwave plasma generation device for realizing SiC two step low-temperature oxidations,
The corresponding plasma discharge time is tunable.The present invention is close by the way of independent 1 respective array of resonant cavity of 2-10
Resonant cavity 1 above objective table is more than other positions, to guarantee that entire cavity can be realized the purpose of low-temperature oxidation.
In this embodiment, microwave plasma generation device make the plasmarized formation oxygen radical of oxygen molecule or
Oxygen plasma reacts to substitute oxygen molecule with silicon carbide, reduces corresponding temperature and surface oxygen concentration, thus
Inhibit the formation of surface of SiC etch pit, reduces surface damage, the surface of relatively flatization is obtained, to improve MOSFET element
Carrier mobility under high temperature, High-Field.
In this embodiment, specific operating procedure are as follows: select 800w-1000w microwave input power, excitation microwave etc. from
The microwave frequency adjustable extent of daughter is 2.4-2.5GHz.In air pressure 100mTorr, H2∶O2In the environment of=1: 1, sample is set
Objective table initial temperature is set as 100 DEG C, and plasma is heated up with the speed of 1 DEG C/s, after reaching 350 DEG C, carries out low-temperature oxidation, etc.
The ionic discharge time is 400s；Then, changing heating rate is 0.5 DEG C/s, until the microwave plasma oxidation temperature set
Gas is changed to purity oxygen by 800 DEG C of degree, and 800mTorr is changed into air pressure, and the plasma discharge time is 800s, and it is (low to carry out high temperature
In 1300 DEG C of furnace oxidation) oxidation, oxidated layer thickness is about 30nm, after the completion of oxidation, purity oxygen is changed to pure nitrogen gas, in nitrogen
Atmosphere cools under enclosing.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical scheme and beneficial effects
Describe in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in protection of the invention
Within the scope of.
Claims (10)
1. a kind of microwave plasma generation device with the double coupled resonators of micropore micro-nano structure, which is characterized in that including
Outer chamber and setting are in the double coupled resonators of the intracorporal multiple micropore micro-nano structures of the exocoel, wherein the resonant cavity includes one
Circular cylindrical cavity is uniformly distributed the microwell array formed by multiple micropores on the peripheral wall of the circular cylindrical cavity, the micropore
Diameter is the odd-multiple of incident wavelength, has metal micro-nanostructure on the inner wall of the circular cylindrical cavity, the microwell array with
Metal micro-nanostructure forms double coupled structures to realize resonance enhancing and adjustable, and the periodic dimensions of the metal micro-nanostructure are
λ/n, λ are incident wavelength, and n is the refractive index of resonance cavity material；Wherein, the 3/ of the Zhou Changwei incident wavelength of the circular cylindrical cavity
4 integral multiple, resonance occur on the 1st odd mould.
2. microwave plasma generation device according to claim 1, wherein the metal micro-nanostructure is periodically to arrange
Protrusion, recess or the grating of column.
3. microwave plasma generation device according to claim 1, wherein the metal micro-nanostructure is grating, packet
Include wide equidistant parallel slits.
4. microwave plasma generation device according to claim 1, wherein the circular cylindrical cavity is by mica or ceramics
Material is made, and the metal micro-nanostructure is gold or brass.
5. microwave plasma generation device according to claim 1, wherein the resonant cavity is arranged in a linear, respectively
It is connected by double-layer coaxial cable with a microwave generator.
6. microwave plasma generation device according to claim 5, wherein one coupling of double-layer coaxial cable package
One end of probe, the double-layer coaxial cable is connected with the microwave generator, and it is double that the other end is inserted into the micropore micro-nano structure
In coupled resonator.
7. microwave plasma generation device according to claim 1, wherein the outer chamber is quartz ampoule.
8. microwave plasma generation device according to claim 1, wherein the microwave plasma generation device is also
Including the objective table being arranged in outer chamber, the objective table is arranged under the double coupled resonators of the micropore micro-nano structure
Side.
9. microwave plasma generation device according to claim 8, wherein the objective table is rotatable and can rise
Drop.
10. microwave plasma generation device according to claim 8, wherein in the outer chamber close to the objective table
On be provided with visible observation hole and pyrometer.
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101119609A (en) * | 2007-09-12 | 2008-02-06 | 清华大学 | Narrow slit and large slit combination type microwave plasma reaction cavity |
| CN101378616A (en) * | 2008-10-13 | 2009-03-04 | 电子科技大学 | Atmosphere plasma cylindrical microwave excitation cavity |
| JP2009140673A (en) * | 2007-12-05 | 2009-06-25 | Japan Atomic Energy Agency | Beam terminating method and beam terminating device |
| WO2012084660A1 (en) * | 2010-12-23 | 2012-06-28 | Element Six Limited | A microwave plasma reactor for manufacturing synthetic diamond material |
| CN204067303U (en) * | 2014-06-12 | 2014-12-31 | 单家芳 | For the microwave cavity of plasma source |
| CN104726850A (en) * | 2013-12-23 | 2015-06-24 | 朱雨 | Microwave-plasma chemical vapor deposition equipment |
| CN106253031A (en) * | 2016-08-12 | 2016-12-21 | 中国人民解放军国防科学技术大学 | Submicrosecond level long pulse high efficiency the Theory of Relativity Cherenkov's agitator |
| CN106304602A (en) * | 2016-09-26 | 2017-01-04 | 吉林大学 | A kind of microwave coupling plasma resonant |
| CN106816353A (en) * | 2015-12-02 | 2017-06-09 | 中国科学院深圳先进技术研究院 | Plasma source element, plasma source apparatus and its application |
| CN106997838A (en) * | 2017-04-18 | 2017-08-01 | 电子科技大学 | A kind of millimeter wave extension interaction device of use coaxial resonant cavity and many electrons’ system |
-
2018
- 2018-05-25 CN CN201810521198.6A patent/CN108770174B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101119609A (en) * | 2007-09-12 | 2008-02-06 | 清华大学 | Narrow slit and large slit combination type microwave plasma reaction cavity |
| JP2009140673A (en) * | 2007-12-05 | 2009-06-25 | Japan Atomic Energy Agency | Beam terminating method and beam terminating device |
| CN101378616A (en) * | 2008-10-13 | 2009-03-04 | 电子科技大学 | Atmosphere plasma cylindrical microwave excitation cavity |
| WO2012084660A1 (en) * | 2010-12-23 | 2012-06-28 | Element Six Limited | A microwave plasma reactor for manufacturing synthetic diamond material |
| CN104726850A (en) * | 2013-12-23 | 2015-06-24 | 朱雨 | Microwave-plasma chemical vapor deposition equipment |
| CN204067303U (en) * | 2014-06-12 | 2014-12-31 | 单家芳 | For the microwave cavity of plasma source |
| CN106816353A (en) * | 2015-12-02 | 2017-06-09 | 中国科学院深圳先进技术研究院 | Plasma source element, plasma source apparatus and its application |
| CN106253031A (en) * | 2016-08-12 | 2016-12-21 | 中国人民解放军国防科学技术大学 | Submicrosecond level long pulse high efficiency the Theory of Relativity Cherenkov's agitator |
| CN106304602A (en) * | 2016-09-26 | 2017-01-04 | 吉林大学 | A kind of microwave coupling plasma resonant |
| CN106997838A (en) * | 2017-04-18 | 2017-08-01 | 电子科技大学 | A kind of millimeter wave extension interaction device of use coaxial resonant cavity and many electrons’ system |
Non-Patent Citations (2)
| Title |
|---|
| Donut shape plasma jet plumes generated by microwave pulses even without air mole fractions;Zhaoquan Chen et., al.;《Journal of Applied Physics》;20170109;第121卷(第2期);全文 * |
| 双间隙谐振腔耦合缝调谐结构的分析与模拟;谢兴娟等;《真空科学与技术学报》;20120331;第32卷(第3期);全文 * |
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