KR100381915B1 - Chemical Vapor Deposition Device Using Microwave - Google Patents

Abstract

The present invention relates to a chemical vapor reaction apparatus using a microwave, and more particularly, the microwave generator 100 and the waveguide 210 including the magnetron 110, the control device 120 and the power supply device 130, Microwave, characterized in that consisting of the waveguide unit 200, the breaker 220, the matching unit 230 and the indicator 240, and the chemical vapor reactor 400 inside the heater 300 and heater 300 The present invention relates to a chemical vapor reaction apparatus using waves.

The present invention is to inject the microwave generated by the microwave generator into the reaction chamber (chamber) through the waveguide to the chemical vapor reaction apparatus capable of adsorbing the thin film in a chemical vapor reaction under normal or near atmospheric pressure without forming a plasma The addition of a device allows microwaves to activate chemical reactions at atmospheric pressure to lower the reaction temperature, as well as to allow chemical reactions to occur on the substrate surface, and to increase the mobility of the reacted formation on the substrate surface. -coverage) and film quality properties. In other words, in the conventional method of heating a substrate in a chemical vapor reaction apparatus in a heater, it is possible to minimize substrate heating by activating a chemical reaction by microwaves and other impurities (hydrogen, carbon) in the film quality. It also has advantages.

Description

Chemical Vapor Deposition Device Using Microwave

The present invention relates to a chemical vapor reaction apparatus using microwaves, and more particularly, to a microwave gas generator 100, a waveguide 200, a heater 300, and a chemical vapor reactor 400 inside the heater 300. The present invention relates to a chemical vapor reaction apparatus using microwaves.

Conventional chemical vapor deposition (CVD) methods include atmospheric pressure chemical vapor deposition (AP-CVD), low pressure chemical vapor deposition (LP-CVD) and plasma (Plasma). ), There is a Plasma Enhanced Chemical Vapor Deposition (PE-CVD) method, and when a SiO ₂ thin film is deposited by each CVD method, a schematic chemical reaction can be expressed by the following equation.

AP-CVD: SiH ₄ + O ₂ → SiO ₂ + 2H ₂ --------------------------- Equation 1)

PE-CVD: SiH ₄ + 2N ₂ O → SiO ₂ + 2N ₂ + 2H ₂ ------------------- Formula 2)

LP-CVD: SiH ₂ Cl ₂ + 2N ₂ O → SiO ₂ + 2N ₂ + 2HCl ---------------- Formula 3)

On the other hand, when the SiO ₂ thin film is deposited by the above-mentioned CVD method, the film quality of each method is listed in Table 1 below.

Table 1. Properties of membrane quality by each chemical vapor reaction method

PE-CVD AP-CVD LP-CVD Deposition temperature band 200 ~ 400 ℃ 400 ~ 500 ℃ 700 ~ 900 ℃ Step Coverage Good Bad Good Stress Compresssive Tensile Tensile Dielectric Strength [10 ⁶ V / cm] 8 10 10 Etch Rate [Å / min] (100: 1 = H ₂ O: HF) 400 60 30

When depositing SiO ₂ by various chemical vapor reaction methods, the film quality is shown according to each vapor deposition method. The conventional AP-CVD method is a gaseous vapor deposition, so the deposition temperature is lowered below 400 ° C. Hard. Therefore, when applied after the metal wiring, especially after the aluminum wiring process deposited at 400 ℃ or more has a hillock effect on the aluminum wiring. In addition, since the deposition is performed at atmospheric pressure, the mean free path of the reaction gas is small, so that the step coverage of the film is poor.

Since most LP-CVD methods are carried out at a high temperature of 700 ° C. or higher, SiO ₂ having good characteristics is deposited, but the deposition temperature is very high, thus deepening the junction depth and degrading the characteristics of the thin film that is weak to heat. It has a disadvantage.

In addition, the conventional plasma chemical vapor deposition (PE-CVD) method can lower the deposition temperature, but because it is deposited in the plasma state, the SiO ₂ film has poor characteristics, and not only charge is accumulated in the conductors floating on the substrate, but also stress of the thin film. Stress also forms a compressive film. The charge accumulation problem causes a decrease in the gate oxide film reliability due to the antenna effect in the situation where the gate oxide film is thinned (less than 80 kV) due to the high directivity of the semiconductor device, and hydrogen is contained in the film quality. Subsequent heat treatment may trap Vth at the gate oxide interface of the transistor. When SiO _2, which is an insulator film on a metal wiring such as aluminum alloy wiring, is deposited by the plasma method, a strong compressive stress of the film itself is applied to the lower aluminum metal so that the wire is disconnected due to stress migration. This causes a reliability problem.

Therefore, the low deposition temperature and film characteristics that can be applied after the metal processing are good, and the step coverage should be developed.

Currently, Tetraelthyl Ortho Silicate (TEOS, Si (OC ₂ H ₅ ) ₄ is not used in SiC ₄ and O ₂ or N ₂ O in Equation 1) in a plasma chemical vapor method or an atmospheric pressure chemical vapor method. There is also a method using a chemical reaction using a gas and ozone (O ₃ ) or N ₂ 0, but the step coverage characteristics of the thin film by changing only the reaction of the source gas and no difference from the atmospheric chemical or plasma chemical vapor equipment It is improving the gap fill capability. However, when the TEOS gas is used, carbon is contained in the SiO ₂ thin film, so that the characteristics of the transistor may be changed during the high temperature heat treatment during the manufacturing process of the transistor.

The present invention is to inject the microwave generated by the microwave generator into the reaction chamber (chamber) through the waveguide to the chemical vapor reaction apparatus capable of adsorbing the thin film in a chemical vapor reaction under normal or near atmospheric pressure without forming a plasma By adding a device, microwaves can activate chemical reactions at atmospheric pressure to lower the reaction temperature, as well as allow specific chemical reactions to occur on the substrate surface and increase the mobility of the reacted formation on the substrate surface. It is aimed at improving step coverage and film quality properties. That is, in the conventional method of heating a substrate in a chemical vapor reaction apparatus in a heater, it has an advantage of minimizing substrate heating by activating a chemical reaction by microwaves.

1 is a schematic configuration diagram of a chemical vapor reaction apparatus using the microwave of the present invention

Figure 2 is a detailed view of the chemical vapor reaction apparatus using the microwave of the present invention

<Description of the symbols for the main parts of the drawings>

100: microwave generator 110: magnetron

120: controller 130: power supply

200: waveguide 210: waveguide

220: breaker 230: matcher

240: indicator 300: burner

310: stirrer 400: chemical vapor reactor

410: heater 420: mixer

430: shower head 450: MFC (Mass Flow Controller)

460: valve 470: vacuum pump

Chemical vapor reaction apparatus using the microwave of the present invention is characterized in that the microwave generator 100, the waveguide 200, the heater 300 is integrally connected.

In addition, the microwave generator 100 is a device for generating a microwave is composed of a magnetron 110, a control device 120 and a power supply 130, the microwave is generated by the microtone (110) and the controller ( The intensity of the microwaves generated at 120 is adjusted.

The waveguide 200 transmits the microwaves generated by the microwave generator 100 to the chemical vapor reactor 400 accommodated inside the heater 300, which will be described later. In order to activate the adsorbed material adsorbed on the surface of the specimen contained in the) to promote the chemical reaction to form a thin film (film) is formed by connecting between the microweave generator 100 and the heater 300. The waveguide 200 is composed of a waveguide 210, a breaker 220, a matcher 230 and the indicator 240, the waveguide 210 is a microwave generated by the microwave generator 100 It serves to send to the chemical vapor reactor 400 in the heater 300 in which the chemical reaction occurs without loss, and the circuit breaker 220 applies the microwave at the time of blocking, and the matcher 230 is a microwave heater ( Refers to a device for adjusting the impedance of the waveguide 200 to minimize the reflection from the 300. The microwave heater 300 takes a closed conventional structure and includes a chemical vapor reactor 400 therein, the chemical vapor reactor 400 has a conventional structure made of quartz material and the specimen is placed therein. do. The heater 300 having such a structure includes a chemical vapor reactor 400. The chemical vapor reactor 400 is composed of a sour head 430 for mixing the incoming chemical reaction gas and a heater 410 for heating so as to effectively react and adsorb only on the surface of the specimen. The chemical reaction of the gas flowing into the heater causes the energy of the microwave and the specimen to be heated in the heater 410 so that the reaction occurs on the surface of the specimen. That is, the chemical reaction does not occur inside the heater except the specimen. In this case, the heater 410 heats the specimen to be adsorbed during the chemical vapor reaction at about 200 ° C. to about 500 ° C. so that a smooth chemical reaction occurs. Meanwhile, a single mode in which the standing wave is formed inside the heater 300 is performed. In the case of mode), the stirrer 310 is not installed, but in the case of a multi mode in which a plurality of resonance waves are formed inside the heater 300, the stirrer 310 is installed. The diameter of the chemical vapor reactor 400 inside the heater 300 is slightly larger than the size of the sample to be adsorbed (for example, when using an 8 inch wafer specimen, a shower head of 10 to 12 inches diameter is used). Reaction gas is mixed into the chemical vapor reactor 400 through the valve 460, the MFC 450, and the mixer 420 with a plurality of shower heads 430 configured to have a cylindrical shape for adsorption uniformity of the specimen. Ensure that the chemical vapor adsorption reaction is carried out evenly. In addition, the lower portion of the chemical vapor reactor 400 inside the heater 300 is provided with a heating device such as a heater 410 to heat the specimen to the inside of the chemical vapor reactor 400 through the shower head 430. The reaction gas is introduced to the chemical gas reaction well in the test specimen, the reaction gas used first when the chemical vapor adsorption of the other specimen by connecting the vacuum pump 470 to one side of the chemical vapor reactor 400 inside the heater 300 Is discharged to the chemical vapor reactor 400 and the heater 300 by the vacuum pump 470.

Hereinafter, the chemical vapor reaction apparatus of the present invention will be described in detail using the accompanying drawings.

1 is a schematic configuration diagram of a chemical vapor reaction apparatus using a microwave of the present invention, a heater 300 including a microwave generator 100, a waveguide 200 and a chemical vapor reactor 400 is integrated It shows the connected structure.

2 is a detailed view of the chemical vapor reaction apparatus using the microwave of the present invention, the microwave generator 100 is a magnetron 110 for generating a microwave, the control device 120 for controlling the output of the microwave and the magnetron A power supply 130 for supplying a voltage is included.

The waveguide 200 is a portion that directs and adjusts the microwaves emitted from the microwave generator 100 to the heater 300 to absorb the microwaves reflected from the waveguide 210 and the heater, which are the main passages of the microwaves. To detect the output and reflection of the circuit breaker 220, the structure of the heater 300, the matching device 230 for adjusting the microwave according to the condition of the heater 300, and the microwave to prevent destruction of the magnetron 110 It consists of an indicator 240 to.

The heater 300 is referred to as a metal cylinder type confinement apparatus (Cylinderical cavity applicator) generated in the microwave generator 100 and the microwaves delivered through the waveguide 200 are concentrated to react in the specimen and reaction chamber (Chamber). It is a space for activating the reaction of gas, and considering the leakage of microwaves, the distribution and uniformity of the electric field of microwaves. The heater 300 is divided into a single mode and a multi mode according to the distribution pattern of the internal electric field. In the single mode heater, the incident wave and the reflected wave are controlled so that standing waves are formed inside the furnace. It is designed and the waveform is relatively simple, so the electric field distribution can be known accurately, but the maximum electric field is narrow, which is subject to spatial limitations of chemical vapor reactor. Multimode heaters are in the form of a metal box or cylinder that is at least twice the microwave wavelength and there are many kinds of resonant waves at a given frequency. However, if the number of modes generated in the heater is small, the distribution of the electric field becomes uneven. In order to solve this disadvantage, the microwave is installed in the propeller-shaped mode stirrer 310 in the incident portion in the heater 300 to make the microwave into a uniform wave in the heater 300 while the stirrer rotates.

Chemical vapor reactor 400 is installed in the heater 300 to minimize the effect on the electric field of the microwave is preferably composed of quartz (Quarts) that the microwave is permeable well, insulated box ( Ceramic insulation is applied to the chemical vapor reactor 400 to act as an insulation box. In addition, since the chemical vapor reactor 400 must be maintained above a critical temperature capable of absorbing microwaves, a heating device such as a heater 410 is provided under the specimen to be adsorbed, and the chemical vapor reactor 400 is reacted. A device for supplying gas and a shower provided to allow the reaction gas to uniformly contact the specimen for uniform film growth on the specimen of the mixer 420 and the chemical vapor reactor 400 for mixing the reaction gas for uniform reaction. The head 430 and the mass flow controller (MFC) 450, the valve 460, and the vacuum pump 470, which adjust the capacity of the reaction gas, are connected to the chemical vapor reactor 400.

Hereinafter, the present invention will be described by the following comparative examples and examples. However, these do not limit the technical scope of the present invention.

Comparative Example

Chemical Vapor Reactors include Plasma Enhanced Chemical Vapor Deposition Devices (PE-CVD), Atmosphere Pressure Chemical Vapor Deposition Devices (AP-CVD), and Low Pressure Chemical Vapor Reactors. (Low Pressure Chemical Vapor Deposition Device, LP-CVD), the adsorption method is a thin film adsorption method using a conventional thin film adsorption SiO ₂ thin film on the specimen and the results are summarized in Table 2 below.

<Example>

First of all, the basic vacuum is made by using a vacuum pump to reduce contamination, and plasma is formed at low pressure (1mTorr ~ 30mTorr). There is no difference in the method of adsorbing SiO 2 thin film on the specimen as in the comparative example except for using a microwave Assisted Chemical Vapor Deposition Device (MA-CVD). The results are summarized in Table 2 below. The frequency of the microwave is fixed at 2.45 GHz, the power is fixed at 0.5 to 5 kW, the temperature of the heater is fixed at 250 degrees, and then SiH4 and hydrogen (H2) are flowed into the reactor at 50 sccm and 200 sccm, respectively, as shown in Table 2. Can adsorb excellent SiO2.

Table 2. Adsorption results of SiO ₂ thin films using chemical vapor reactors of Comparative Examples and Examples

PE-CVD AP-CVD LP-CVD MA-CVD Adsorption Temperature Band 200 ~ 400 ℃ 400 ~ 500 ℃ 700 ~ 900 ℃ Less than 400 ℃ Step Coverage Good Bad Good Good Stress Compresssive Tensile Tensile Tensile Membrane density Bad Good Good Good Impact on the whole process Charging issue Hillock on aluminum wire Influence on device juction -

In the case of adsorbing a thin film by using a chemical vapor reaction apparatus using a microwave of the present invention, there is no charge and stress problems, and film quality of the conventional chemical vapor deposition method of plasma As a result, it is possible to secure disadvantages such as a large etching rate and a disadvantage that the adsorption temperature of the atmospheric pressure chemical vapor deposition method is 400 ° C. or more, and the disadvantages of poor step coverage. In addition, there is an advantage that can be applied to the process that can not be used because the conventional adsorption rate is low because it can promote the chemical reaction. This method can be applied to the insulator film immediately after the transistor fabrication process and also to the insulator film after the metal process. It is also a new field of chemical vapor reactions and can be used in future generation processes.

Claims (8)

In a chemical vapor reaction apparatus for adsorbing a substance to be adsorbed on a surface of a specimen by a chemical vapor method, the substance to be adsorbed is thinned, the microwave generator 100 generating microwaves and the microwave generator 100 generated from the microwave generator 100. Microwaves are efficiently transferred to the chemical vapor reactor 400 of the heater 300, and the waveguide 200 formed by connecting between the microwave generator 100 and the heater 300 and the silicon by storing the specimen Means to be made of a material and a conventional chemical vapor reactor 400 is accommodated therein and at the same time to heat the vaporized material to be vaporized by transporting it into the chemical vapor reactor 400 to selectively adsorb the material to be adsorbed on the surface of the specimen Chemical vapor reaction apparatus using a microwave, characterized in that consisting of a heater 300 provided. The microwave generator 100 of claim 1, wherein the microwave generator 100 includes a magnetron 110, a control device 120, and a power supply device 130. The method of claim 1, wherein the waveguide 200 is a chemical vapor reaction apparatus using a microwave, characterized in that the waveguide 210, the breaker 220, the matching unit 230 and the indicator 240 is included. According to claim 1, wherein the heater 300 is a single mode (single mode) in which standing waves are formed without a stirrer 310, the multi-mode (multi-mode resonant waves are formed inside the heater 300) mode) chemical vapor reaction apparatus using a microwave, characterized in that to install the stirrer 310 delete The method of claim 1, wherein the reaction gas is provided with a plurality of cylindrical shower heads 430 in the upper portion of the chemical vapor reactor 400 in the heater 300, the reaction gas is a valve 460, MFC 450 and the mixer ( Chemical vapor reaction apparatus using a microwave, characterized in that the chemical vapor adsorption reaction is evenly carried out to the specimen is mixed into the chemical vapor reactor 400 through 420 According to claim 1, Chemical vapor reaction apparatus using a microwave, characterized in that the heating device such as a heater 410 is connected to the lower portion of the chemical vapor reactor 400 in the heater 300. According to claim 1, Chemical vapor reaction apparatus using a microwave, characterized in that the vacuum pump 470 is connected to one side of the chemical vapor reactor 400 inside the heater (300).