CN115207592A - Compact integrated directional coupler with high coupling coefficient - Google Patents
Compact integrated directional coupler with high coupling coefficient Download PDFInfo
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- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
- H01P5/18—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers
- H01P5/184—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers the guides being strip lines or microstrips
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Abstract
The invention discloses a monolithic integrated directional coupler with high coupling coefficient, which comprises an input port, a through port, a coupling port and an isolation port, wherein the input port and the through port are arranged at two ends of a first microstrip line, the coupling port and the isolation port are arranged at two ends of a second microstrip line, the first microstrip line and the second microstrip line at least comprise a metal layer, and at least one part of the first microstrip line and at least one part of the second microstrip line are arranged on the metal layers of different layers. Because the coupling microstrip line is made of two different layers of metal, the distance between the coupling lines is not limited by process rules and can be smaller than the specified minimum distance between the same layer of metal, and therefore, a high coupling coefficient can be realized. Compared with the high coupling coefficient directional coupler realized by using 6 or 8 same-layer metal coupling wires at present, the high coupling coefficient directional coupler has a much smaller size, and is beneficial to realizing the monolithic integration of a high-performance millimeter wave communication system.
Description
Technical Field
The invention relates to the technical field of Monolithic Microwave Integrated Circuits (MMICs), in particular to a compact integrated directional coupler with a high coupling coefficient.
Background
With the development of wireless communication technology, the millimeter wave frequency band (30 GHz-300 GHz) has gained wide attention, and the related application technology has also gained vigorous development. Compared with the Sub 6GHz band, which is becoming more and more crowded, the millimeter wave band has much more abundant bandwidth resources and less in-band interference. Therefore, millimeter wave communication shows incomparable great advantages in the aspects of high speed, low time delay, large capacity, low interference and the like, and the future development space is extremely wide.
Because the wavelength of millimeter waves is very short, the millimeter wave communication system can more conveniently realize monolithic integration, i.e., most circuit elements do not need to be placed on a Printed Circuit Board (PCB) any more, but are manufactured on a semiconductor wafer. The directional coupler is an important microwave/millimeter wave circuit element, and can be used for distribution, synthesis and phase shift of power signals. In millimeter wave communication systems, directional couplers are integrated on the same wafer as other components, thereby reducing insertion loss and parasitic parameters. Currently, the most widely used MMIC technology is gallium arsenide (GaAs) monolithic integration. The gallium arsenide semiconductor material has excellent high-frequency performance, and the linearity and the output power density of the gallium arsenide semiconductor material in a millimeter wave frequency band are superior to those of a silicon-based CMOS process. In recent years, a gallium nitride (GaN) monolithic integration process called a "third generation semiconductor" has been commercialized, which has not only excellent high frequency performance but also an output power density 10 times or more higher than that of a silicon-based CMOS process, and thus is particularly suitable for high power applications such as a communication base station, a phased array radar, and the like.
However, the current commercial GaAs and GaN monolithic microwave integration process only includes two to three metal layers, and the dielectric layer between the metal layers is very thin (usually < 0.5 μm), so that it is difficult to achieve proper dissimilar metal broadside coupling. Therefore, most of the monolithic integrated directional couplers are manufactured by using the same-layer metal edge coupling technology at present, namely all the coupling lines are manufactured by using the same-layer metal, the coupling degree is controlled by adjusting the distance between the coupling lines, and the smaller the distance is, the higher the coupling degree is, and the larger the voltage coupling coefficient is. However, subject to process rules, the spacing between the metals of the same layer must be greater than some minimum value Gmin (e.g., gmin =5 μm for GaAs pHEMT processes), which limits the achievable coupling coefficient size. The voltage coupling coefficient between the two same-layer metal coupling lines is generally less than-4 dB. By using the Lange coupler structure, namely 4 parallel coupling lines are used to fully utilize the fringe stray electric fields at the two sides of the coupling lines, the coupling coefficient can be improved to about-3 dB. If a higher coupling coefficient is required, more parallel coupling lines, for example 6 or even 8, are required, which makes the area of the directional coupler bulky and disadvantageous for monolithic integration.
Disclosure of Invention
In order to overcome the defects and shortcomings of the prior art, the invention provides a monolithic integrated directional coupler with high coupling coefficient, so as to realize a directional coupler with high coupling coefficient and small size.
In order to solve the above problems, the present invention provides a monolithic integrated directional coupler with a high coupling coefficient, which includes an input port, a through port, a coupling port, and an isolation port, where the input port and the through port are disposed at two ends of a first microstrip line, the coupling port and the isolation port are disposed at two ends of a second microstrip line, the first microstrip line and the second microstrip line both include at least one metal layer, and at least a portion of the first microstrip line and at least a portion of the second microstrip line are disposed on different metal layers.
Furthermore, the horizontal distance range between the first microstrip line and the second microstrip line is between 0 and 20 microns, and the voltage coupling coefficient adjusting range is between-10 dB and-1.25 dB.
Further, the first microstrip line includes a T1 portion, and the second microstrip line includes a T2 portion; the portion T1 is located in the first metal layer and the portion T2 is located in the second metal layer.
Further, the first microstrip line includes a T1 portion and a T1 'portion, and the second microstrip line includes a T2 portion and a T2' portion; the T1 part and the T2 'part are located on a second metal layer, the T1' part and the T2 part are located on a first metal layer, and the T1 part and the T1 'part, and the T2 part and the T2' part are respectively interconnected through a via hole.
Further, the first microstrip line comprises a T1 portion, a T1 'portion, a T3 portion and a T3' portion, and the second microstrip line comprises a T2 portion, a T2 'portion, a T4 portion and a T4' portion; the T1 portion, the T1 'portion, the T3 portion, and the T3' portion are all located on a second metal layer, and the T2 portion, the T2 'portion, the T4 portion, and the T4' portion are all located on a first metal layer; the T1 part and the T1 'part, and the T3 part and the T3' part are respectively interconnected at the first metal layer through vias; the T1 portion and the T3 portion, the T1 'portion and the T3' portion, the T2 portion and the T4 portion, and the T2 'portion and the T4' portion are interconnected by an air bridge, respectively.
Further, the first microstrip line includes a T1 portion, a T1 'portion, a T3 portion, and a T3' portion, and the second microstrip line includes a T2 portion, a T2 'portion, a T4 portion, and a T4' portion; wherein the T1 portion, the T2 'portion, the T3 portion, the T4' portion are located in a second metal layer, and the T1 'portion, the T2 portion, the T3' portion, the T4 portion are located in a first metal layer; the T1 part and the T1 'part, and the T3 part and the T3' part are respectively interconnected in the first metal layer through vias; the T1 portion and the T3 portion, the T1 'portion and the T3' portion, the T2 portion and the T4 portion, and the T2 'portion and the T4' portion are interconnected by an air bridge, respectively.
Furthermore, the via hole is in diagonal transition with the corresponding microstrip line.
Furthermore, the first microstrip line and the second microstrip line are trapezoidal at the port.
Further, the first microstrip line and the second microstrip line may be curved or linear.
Furthermore, the monolithic integration directional coupler with high coupling coefficient is prepared by adopting a GaAs pHEMT, gaAs HBT, siC-based GaN HEMT or Si-based GaN HEMT process.
Compared with the prior art, the invention has the following beneficial effects and advantages:
the microstrip line comprises an input port, a through port, a coupling port and an isolation port, wherein the input port and the through port are arranged at two ends of a first microstrip line, the coupling port and the isolation port are arranged at two ends of a second microstrip line, the first microstrip line and the second microstrip line both comprise at least one metal layer, and at least one part of the first microstrip line and at least one part of the second microstrip line are arranged on the metal layers at different layers. Because the coupling microstrip line is made of two different layers of metal, the distance between the coupling lines is not limited by process rules and can be smaller than the specified minimum distance between the same layer of metal, and therefore, a high coupling coefficient can be realized. Compared with the high coupling coefficient directional coupler realized by using 6 or 8 same-layer metal coupling wires at present, the high coupling coefficient directional coupler provided by the invention has a much smaller size, and is beneficial to realizing the monolithic integration of a high-performance millimeter wave communication system.
Drawings
In order to more clearly illustrate the technical solution of the present invention, the attached drawings are provided for brief introduction. It is to be noted, however, that the following drawings are only for the purpose of illustrating the present invention and are not to be construed as limiting the present invention.
In the drawings:
fig. 1 (a) is a schematic diagram of a basic structure of a high-coupling-coefficient integrated directional coupler in embodiment 1 of the present invention;
fig. 1 (b) is a layout of an integrated directional coupler with a high coupling coefficient in embodiment 1 of the present invention;
fig. 2 (a) is a schematic diagram of a basic structure of a high-coupling-coefficient integrated directional coupler in embodiment 2 of the present invention;
fig. 2 (b) is a layout of the high coupling coefficient integrated directional coupler in embodiment 2 of the present invention;
fig. 3 (a) is a schematic diagram of a basic structure of a high coupling coefficient integrated directional coupler in embodiment 3 of the present invention;
fig. 3 (b) is a layout of the high coupling coefficient integrated directional coupler in embodiment 3 of the present invention;
fig. 4 (a) is a schematic diagram of a basic structure of an integrated directional coupler with a high coupling coefficient in embodiment 4 of the present invention;
fig. 4 (b) is a layout of an integrated directional coupler with a high coupling coefficient in embodiment 4 of the present invention;
fig. 5 is a layout of the high coupling coefficient integrated directional coupler in embodiment 5 of the present invention;
FIG. 6 is a S-parameter graph of example 5;
fig. 7 is a phase difference graph of the through port and the coupled port of embodiment 5.
Detailed Description
The high coupling coefficient monolithically integrated directional coupler of the present invention will now be described in more detail with reference to a schematic drawing, in which a preferred embodiment of the present invention is shown, it being understood that a person skilled in the art may modify the invention described herein while still achieving the advantageous effects of the invention. Accordingly, the following description should be construed as broadly as possible to those skilled in the art and not as limiting the invention.
Example 1
Embodiment 1 of the present invention provides a monolithic integrated directional coupler with a high coupling coefficient, which is manufactured by using, for example, gaAs pHEMT process, and with reference to fig. 1 (a) and fig. 1 (b), the monolithic integrated directional coupler includes: the microstrip line comprises an input port P1, a through port P2, a coupling port P3 and an isolation port P4, wherein the input port P1 and the through port P2 are arranged at two ends of a first microstrip line, the coupling port P3 and the isolation port P4 are arranged at two ends of a second microstrip line, the first microstrip line and the second microstrip line at least comprise a metal layer, and at least one part of the first microstrip line and at least one part of the second microstrip line are arranged on different metal layers.
In this embodiment, the first microstrip line has a portion T1, two ends of the portion T1 are the input port P1 and the through port P2, the second microstrip line has a portion T2, and two ends of the portion T2 are the coupling port P3 and the isolation port P4, which are denoted as the first microstrip line T1 and the second microstrip line T2 for convenience of description.
For example, the first microstrip line T1 is disposed on the first metal layer M1, and the second microstrip line T2 is disposed on the second metal layer M2.
Because the M1 and M2 two layers of metal are used for manufacturing the coupling microstrip line, the distance between the coupling lines is not limited by process rules any more, can be smaller than the specified minimum distance of the metal on the same layer, and can even be partially overlapped, and the voltage coupling coefficient can reach more than-1.25 dB.
In addition, because the dielectric layer between the M1 and M2 metal layers of the commercial GaAs and GaN monolithic microwave integration process is very thin at present, and there is a certain difficulty in realizing proper broadside coupling, the coupling microstrip lines located on different metal layers should be kept in edge coupling, broadside coupling should be as small as possible, that is, large-area overlapping cannot occur, otherwise, the isolation of the coupler is deteriorated.
In view of this, in embodiment 1 of the present invention, the horizontal spacing S between the first microstrip line and the second microstrip line is preferably in a range of 0 to 20 μm. Correspondingly, the voltage coupling coefficient adjusting range is between-10 dB and-1.25 dB.
The width of the first microstrip line T1 on the M1 layer is W1, and the width of the second microstrip line T2 on the M2 layer is W2. W1 is used to adjust the matching impedance Z01 of the input port P1 and the through port P2, preferably 3 to 30 μm. W2 is used to adjust the matching impedance Z02 of the coupled port P3 and the isolated port P4, preferably 3-30 μm. Increasing/decreasing the width causes a corresponding decrease/increase in the matching impedance. If Z01= Z02 is required, W1= W2 may be set. However, in the actual chosen process, there may be some differences in the thickness of the M1 and M2 metals and the distance from the ground plane, so that Z01= Z02 can be guaranteed by fine tuning W1 and W2. The length L of the coupling microstrip line is used for adjusting the central working frequency of the directional coupler, and the smaller L, the higher the central frequency, preferably 100-2000 μm. In addition, to ensure good odd-even mode symmetry, the two coupled microstrip lines should have the same length L. The distance S between the coupled microstrip lines is used for adjusting the coupling coefficient, and the smaller the S is, the larger the coupling coefficient is. As described above, the spacing S between M1 and M2 metals is not limited by process rules and can be set to any value, but since the dielectric layer between M1 and M2 metal layers of the current commercial GaAs and GaN monolithic microwave integration process is very thin, it is difficult to achieve proper broadside coupling, and if S < 0, i.e. the coupling lines are partially overlapped, the introduced broadside coupling may cause the isolation of the coupler to be poor. Therefore, S should be ≧ 0.
As an example, T1 and T2 have a length L =320 μm and a width W1= W2=8 μm.
For convenient connection with a 50 Ω (or other specification) microstrip line, as shown in fig. 1, trapezoidal lines are added to all four ports of the directional coupler, and the widths of the ends are 35 μm.
The electromagnetic simulation result shows that the center frequency of the directional coupler is 80GHz, the voltage coupling coefficient at the center frequency reaches-3.4 dB, the port impedance is 51 omega, the return loss is more than 25dB, the isolation is more than 21dB, and the phase difference between the straight-through end and the coupling end is 92 degrees.
Example 2
Embodiment 2 may be further implemented on the basis of embodiment 1, or may not exist on the basis of embodiment 1. Wherein the same or similar modules are denoted by the same or similar reference numerals, and the description thereof is omitted.
The directional coupler is manufactured by using, for example, a SiC-based GaN HEMT process, as shown in fig. 2 (a) and 2 (b), in the monolithic integrated directional coupler with a high coupling coefficient of this embodiment, the monolithic integrated directional coupler can be divided into a left part and a right part which are centrosymmetric, each part is composed of 2 parallel coupling microstrip lines, the first microstrip line includes a T1 part and a T1' part, the T1 part is located in the second metal layer M2, the T1' part is located in the first metal layer M1, and the T1 part and the T1' part are interconnected through a via hole; the second microstrip line comprises a portion T2 and a portion T2', the portion T2' is located on the second metal layer M2, the portion T2 is located on the first metal layer M1, and the portion T2' are interconnected through a through hole.
The coupler has the overall structure of a central symmetry structure, and the through port P2 and the coupling port P3 are located on the same metal layer, so that the tiny deviations of the impedances of the through port and the coupling port caused by respectively manufacturing the coupling lines by using M1 and M2 are eliminated.
All microstrip lines have the same length to maintain good odd-even mode symmetry. The width is fine-tuned on the basis of W1= W2 to ensure optimum performance, and the spacing S is used to adjust the coupling coefficient.
As an example, the length L of the first microstrip line and the second microstrip line are each 186 μm, the width W1= W2=12 μm, and the pitch S is 1 μm.
The via structure includes a first metal layer M1, a second metal layer M2, and a via metal layer V, and therefore the distance G between the via and other metal layers must comply with the process rule, that is, not less than the minimum distance Gmin between metal layers specified by the process rule. However, to achieve a high coupling coefficient, S is typically less than Gmin, so a diagonal transition between via to coupled line needs to be used. In order to reduce the discontinuity of the rotation angle of the microstrip line, the oblique line angle theta is less than or equal to 45 degrees. But theta should be more than or equal to 30 degrees, otherwise, the transition line is too long, the occupation ratio of the tightly coupled line segment is reduced, and the coupling coefficient is reduced.
As an example, a diagonal transition of θ =40 ° is used between the via and the coupled line.
For convenient connection with a 50 Ω microstrip line, trapezoidal lines are added to the four ports of the directional coupler, and the width of the tail end of each trapezoidal line is 54 μm.
The electromagnetic simulation result shows that the center frequency of the directional coupler is 65GHz, the voltage coupling coefficient at the center frequency is up to-2.7 dB, the port impedance is 52 omega, the return loss is more than 27dB, the isolation is more than 22dB, and the phase difference between the straight-through end and the coupling end is 90 degrees.
Example 3
Embodiment 3 may be further implemented on the basis of embodiment 1 or embodiment 2, or may not exist on the basis of embodiment 1 or embodiment 2. Wherein the same or similar modules are denoted by the same or similar reference numerals, and the description thereof is omitted.
The directional coupler is manufactured by, for example, using a GaAs HBT process, as shown in fig. 3 (a) and 3 (b), in the monolithically integrated directional coupler with a high coupling coefficient of this embodiment, the first microstrip line includes a T1 portion, a T1 'portion, a T3 portion, and a T3' portion, which are all located on the second metal layer M2, and the T1 portion and the T1 'portion, and the T3 portion and the T3' portion are respectively interconnected on the first metal layer M1 through vias; the second microstrip line comprises a portion T2, a portion T2', a portion T4 and a portion T4', and the portions are all located on the first metal layer M1; the portions T1 and T3, T1 'and T3', T2 and T4, and T2 'and T4' are interconnected by an air bridge, respectively.
The directional coupler can be divided into a left part and a right part which are centrosymmetric, each part is composed of four coupling microstrip lines which are mutually parallel and staggered, edge stray electric fields on two sides of the coupling lines can be fully utilized, and the coupling coefficient is further improved.
In this embodiment 3, several microstrip lines need to be interconnected across. In order to reduce broadside coupling caused by the overlapping of the M1 and M2 metals when bridging interconnects are arranged, an air bridge is used for the bridging interconnects between the second metal layers M2. At the same time, the process rules for MMIC prohibit the connection of the same level metals into a closed loop, so the cross-over interconnect between the first metal layers M1 also uses air bridges. The air bridge is made of an elevated second metal layer M2 with an air layer underneath. The air bridge width B needs to follow the process rules and cannot be smaller than the minimum value Bmin specified by the process rules.
The via structure includes a first metal layer M1, a second metal layer M2, and a via metal layer V, and therefore the distance G between the via and other metal layers must comply with the process rule, that is, not less than the minimum distance Gmin between metal layers specified by the process rule. However, to achieve a high coupling coefficient, S is typically less than Gmin, so a diagonal transition between via to coupled line needs to be used. In order to reduce the discontinuity of the rotation angle of the microstrip line, the oblique line angle theta is less than or equal to 45 degrees. But theta should be more than or equal to 30 degrees, otherwise, the transition line is too long, the occupation ratio of the tightly coupled line segment is reduced, and the coupling coefficient is reduced.
As an example, a diagonal transition of θ =40 ° is used between the via and the coupled line.
As an example, the coupling microstrip line width W1 of the first metal layer M1 is 8 μ M, the coupling microstrip line width W2 of the second metal layer M2 is 8 μ M, and the coupling line pitch S is 0 μ M. The overall length L of the directional coupler is 540 μm.
As an example, the pitch G between the via structure and the other first metal layer M1 is 5 μ M.
As an example, the air bridge width B is 10 μm.
As an example, a 45 ° diagonal transition is used between the air bridge structure and the coupled line.
For convenient connection with a 50 Ω microstrip line, ladder lines with a width of 34 μm are added at all four ports of the directional coupler.
The electromagnetic simulation result shows that the center frequency of the directional coupler is 50GHz, the voltage coupling coefficient at the center frequency is as high as-1.25 dB, the port impedance is 40 omega, the return loss is more than 25dB, the isolation is more than 21dB, and the phase difference between the straight-through end and the coupling end is 93 degrees.
Example 4
Embodiment 4 may be further implemented on the basis of embodiment 1, embodiment 2, or embodiment 3, or may not exist on the basis of embodiment 1, embodiment 2, or embodiment 3. Wherein the same or similar modules are denoted by the same or similar reference numerals, and the description thereof is omitted.
The directional coupler is manufactured by using, for example, a Si-based GaN HEMT process, and as shown in fig. 4 (a) and 4 (b), the first microstrip line of the monolithically integrated directional coupler with a high coupling coefficient of this embodiment includes a T1 portion, a T1' portion, a T3 portion, and a T3' portion, where the T1 portion, the T2' portion, the T3 portion, and the T4' portion are located in the second metal layer M2, the T1' portion, the T2 portion, the T3' portion, and the T4 portion are located in the first metal layer M1, the T1 portion and the T1' portion, the T3 portion and the T3' portion are respectively interconnected in the first metal layer M1 through vias, and the T1 portion and the T3 portion, the T1' portion and the T3' portion, the T2 portion and the T4' portion are respectively interconnected through an air bridge.
The directional coupler can be divided into a left part and a right part which are centrosymmetric, each part is composed of four coupling microstrip lines which are mutually parallel and staggered, edge stray electric fields on two sides of the coupling lines can be fully utilized, and the coupling coefficient is further improved.
The through port P2 and the coupling port P3 are located on the same metal layer M1, so that the tiny deviation of the impedance of the through port and the impedance of the coupling port caused by the fact that the coupling lines are respectively manufactured by using M1 and M2 is eliminated.
The via structure includes a first metal layer M1, a second metal layer M2, and a via metal layer V, and therefore the distance G between the via and other metal layers must comply with the process rule, that is, not less than the minimum distance Gmin between metal layers specified by the process rule. However, to achieve a high coupling coefficient, S is typically less than Gmin, so a diagonal transition between via to coupled line needs to be used. In order to reduce the discontinuity of the rotation angle of the microstrip line, the oblique line angle theta is less than or equal to 45 degrees. But theta should be larger than or equal to 30 degrees, otherwise the transition line is too long, the occupation ratio of the tightly coupled line segment is reduced, and the coupling coefficient is reduced.
As an example, a 45 ° diagonal transition is used between the air bridge structure and the coupled lines.
As an example, the coupling microstrip line width W1 of the first metal layer M1 is 11 μ M, the coupling microstrip line width S2 of the second metal layer M2 is 11 μ M, and the coupling line pitch S is 1 μ M. The overall length L of the directional coupler is 540 μm.
By way of example, the spacing G between the via structure and the other M1 layer metal is 5 μ M.
As an example, the air bridge width B is 10 μm.
For convenient connection with a 50 Ω microstrip line, trapezoidal lines with a width of 45 μm are added to the four ports of the directional coupler.
The electromagnetic simulation result shows that the center frequency of the directional coupler is 50GHz, the voltage coupling coefficient at the center frequency is as high as-1.8 dB, the port impedance is 45 omega, the return loss is more than 26dB, the isolation is more than 20dB, and the phase difference between the straight-through end and the coupling end is 90 degrees.
Example 5
This embodiment 5 may be further implemented on the basis of embodiments 1 to 4, or may not exist on the basis of the above embodiments. Wherein the same or similar modules are denoted by the same or similar reference numerals, and the description thereof is omitted.
This embodiment provides a high coupling coefficient directional coupler, which is made by using GaAs pHEMT process and has a structure as shown in fig. 5, for convenience of description, and is an exemplary improvement based on embodiment 2.
In order to realize more compact layout, the coupling line is bent, and meanwhile, the layout which is centrosymmetric can be still maintained, the coupling line can be divided into an upper part and a lower part which are centrosymmetric, each part is composed of 2 parallel bent coupling microstrip lines, wherein the T1 part and the T2 'part are positioned on the second metal layer M2, the T2 part and the T1' part are positioned on the first metal layer M1, and the T1 part and the T1 'part and the T2' part are respectively interconnected through via holes.
The through port P2 and the coupling port P3 are located on the same metal layer M1, so that the tiny deviation of the impedance of the through port and the impedance of the coupling port caused by the fact that the coupling lines are respectively manufactured by using the M1 and the M2 is eliminated.
As an example, all the coupled microstrip lines have a length of 310 μm, a width of 7 μm, and a pitch of 1 μm.
For convenient connection with a 50 Ω microstrip line, trapezoidal lines with a width of 35 μm are added to all four ports of the directional coupler.
The S parameter curve of the electromagnetic simulation result is shown in figure 6, and the phase difference curve of the coupling end and the straight-through end is shown in figure 7. The center frequency of the directional coupler is 40GHz, the voltage coupling coefficient at the center frequency is as high as-2.3 dB, the port impedance is 51 omega, the return loss is more than 23dB, the isolation is more than 18dB, and the phase difference between the straight end and the coupling end is 91 degrees.
Regarding the structures as in embodiment 1 and embodiments 3 to 4, the relevant microstrip lines may also be bent, and those skilled in the art can implement the bending based on this embodiment, and the description is omitted here.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (10)
1. The monolithic integrated directional coupler with the high coupling coefficient is characterized by comprising an input port, a through port, a coupling port and an isolation port, wherein the input port and the through port are arranged at two ends of a first microstrip line, the coupling port and the isolation port are arranged at two ends of a second microstrip line, the first microstrip line and the second microstrip line at least comprise a metal layer, and at least one part of the first microstrip line and at least one part of the second microstrip line are arranged on the metal layers of different layers.
2. The monolithic integrated directional coupler with high coupling coefficient as claimed in claim 1, wherein the horizontal spacing range between the first microstrip line and the second microstrip line is between 0 μm and 20 μm, and the voltage coupling coefficient adjustment range is between-10 dB and-1.25 dB.
3. The high coupling coefficient monolithic integrated directional coupler of claim 1, wherein the first microstrip line includes a T1 section and the second microstrip line includes a T2 section; the T1 part is located on the first metal layer, and the T2 part is located on the second metal layer.
4. The monolithically integrated directional coupler of claim 1, wherein the first microstrip comprises a T1 portion and a T1 'portion, and the second microstrip comprises a T2 portion and a T2' portion; the T1 part and the T2 'part are positioned on a second metal layer, and the T2 part and the T1' part are positioned on a first metal layer; the T1 part and the T1 'part, and the T2 part and the T2' part are respectively interconnected through vias.
5. The high coupling coefficient monolithic integrated directional coupler of claim 1, wherein the first microstrip line comprises a T1 section, a T1 'section, a T3 section, and a T3' section, and the second microstrip line comprises a T2 section, a T2 'section, a T4 section, and a T4' section; the T1 portion, the T1 'portion, the T3 portion, and the T3' portion are all located on a second metal layer, and the T2 portion, the T2 'portion, the T4 portion, and the T4' portion are all located on a first metal layer; the T1 part and the T1 'part, and the T3 part and the T3' part are respectively interconnected in the first metal layer through vias; the T1 portion and the T3 portion, the T1 'portion and the T3' portion, the T2 portion and the T4 portion, and the T2 'portion and the T4' portion are interconnected by an air bridge, respectively.
6. The high coupling coefficient monolithic integrated directional coupler of claim 1, wherein the first microstrip line comprises a T1 section, a T1 'section, a T3 section, and a T3' section, and the second microstrip line comprises a T2 section, a T2 'section, a T4 section, and a T4' section; wherein the T1 portion, the T2 'portion, the T3 portion, the T4' portion are located in a second metal layer, and the T1 'portion, the T2 portion, the T3' portion, the T4 portion are located in a first metal layer; the T1 portion and the T1 'portion, the T3 portion and the T3' portion are interconnected at the first metal layer through vias, respectively, and the T1 portion and the T3 portion, the T1 'portion and the T3' portion, the T2 portion and the T4 portion, and the T2 'portion and the T4' portion are interconnected through an air bridge, respectively.
7. The high-coupling-coefficient monolithic integrated directional coupler according to any one of claims 3-6, wherein a diagonal transition is used between the via hole and the corresponding microstrip line.
8. The high-coupling-coefficient monolithic integrated directional coupler according to any of claims 3-6, wherein the first microstrip line and the second microstrip line are trapezoidal in shape at their ports.
9. The high-coupling-coefficient monolithic integrated directional coupler according to any one of claims 3-6, wherein the first microstrip line and the second microstrip line are made in a curved shape or a straight shape.
10. The monolithically integrated directional coupler of claim 1, wherein the monolithically integrated directional coupler of high coupling coefficient is fabricated by using a process of gaasp hemt, gaAsHBT, siC-based GaNHEMT, or Si-based GaNHEMT.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115966874A (en) * | 2022-11-14 | 2023-04-14 | 西安电子科技大学 | Microwave ultra-wideband monolithic integrated orthogonal coupler and design method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115966874A (en) * | 2022-11-14 | 2023-04-14 | 西安电子科技大学 | Microwave ultra-wideband monolithic integrated orthogonal coupler and design method |
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