CN115411481A - Waveguide type integrated UTC-PD device - Google Patents
Waveguide type integrated UTC-PD device Download PDFInfo
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- CN115411481A CN115411481A CN202211090710.9A CN202211090710A CN115411481A CN 115411481 A CN115411481 A CN 115411481A CN 202211090710 A CN202211090710 A CN 202211090710A CN 115411481 A CN115411481 A CN 115411481A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
- H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
- H01P5/107—Hollow-waveguide/strip-line transitions
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
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- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The application provides a waveguide type integrated UTC-PD device, including microstrip circuit, this microstrip circuit includes: integrated changeover portion, T type bias circuit and the E plane probe that sets up and connect gradually, T type bias circuit includes: the radio frequency transmission main circuit and the direct current transmission branch circuit adopt microstrip lines which are mutually and vertically connected; the E plane probe is connected with the main radio frequency transmission path through a matching section, and one side of the rectangular waveguide cavity, which extends along the length direction of the rectangular waveguide cavity and is far away from the microstrip circuit, is a waveguide output end, so that the waveguide type integrated UTC-PD device is used as a millimeter wave source device with a working frequency band covering a W wave band. The method and the device can effectively improve the integration level and the frequency bandwidth of the waveguide type integrated UTC-PD device, and can effectively reduce the processing difficulty, the material cost loss and the transmission loss.
Description
Technical Field
The application relates to the technical field of photodiode millimeter wave transmitters, in particular to a waveguide type integrated UTC-PD device.
Background
The millimeter wave/terahertz source based on optical heterodyne beat frequency has a large frequency adjustable range, is easy to generate high-frequency signals, and has been widely applied to the fields of wireless communication, imaging and the like. The single-row Carrier Photodiode UTC-PD (Uni-tracking-Carrier Photodiode) only depends on electrons as active carriers, has the characteristics of quick response, high saturation output and the like, can convert dual-frequency optical signals into millimeter wave signals, and is widely applied to millimeter wave communication systems. At the same time, the packaging of UTC-PD chips has also become important. The rectangular waveguide has no inner conductor, low loss and large power capacity, and is widely applied to a millimeter wave system. The UTC-PD chip generally adopts CPW output of the coplanar waveguide, and the conversion from the coplanar waveguide to the rectangular waveguide is designed, so that the high-efficiency integration of the UTC-PD and the rectangular waveguide can be realized, and the UTC-PD chip can be conveniently connected with other standard millimeter wave devices. The UTC-PD chip and the transmission line conversion structure are packaged in the cavity and output by the rectangular waveguide, so that a millimeter wave source device with high integration and compact structure can be manufactured.
At present, a waveguide type integrated UTC-PD device is mainly integrated through a T-shaped bias circuit and a CPW-waveguide conversion structure, and a radio frequency choke coil is arranged in the bias circuit and used for providing bias voltage for a single-row carrier photodiode UTC-PD without influencing the transmission of radio frequency signals. One type uses a probe to effect the conversion of a coplanar waveguide into a rectangular waveguide into which the printed probe is inserted. However, the existing probe type conversion structure has a large bandwidth and low loss, but because the probe type conversion structure is an insertion type structure and has a small size, and the substrate is often made of quartz, silicon and other media, it is difficult to integrally cut out a circuit shape, so that the probe and the bias circuit need to be printed respectively and then bonded together, which increases the processing difficulty and material cost loss of the whole device. The other type uses non-inserted double-slit CPW-rectangular waveguide conversion, a bias circuit and double-slit conversion are integrally printed, but the structure is narrow in bandwidth and high in transmission loss.
Therefore, how to design a waveguide type integrated UTC-PD device with a wide frequency band, low loss and high integration is a problem to be solved.
Disclosure of Invention
In view of the above, embodiments of the present application provide a waveguide-type integrated UTC-PD apparatus to obviate or mitigate one or more of the disadvantages of the prior art.
One aspect of the present application provides a waveguide-type integrated UTC-PD apparatus, comprising: the waveguide structure is composed of a micro-strip circuit and a rectangular waveguide cavity with the waveguide model of WR-10, wherein the micro-strip circuit and the rectangular waveguide cavity are packaged in a shell and connected with each other;
the microstrip circuit includes: integrated changeover portion, T type bias circuit and the E plane probe that sets up and connect gradually, just T type bias circuit includes: a radio frequency transmission main circuit and a direct current transmission branch circuit which adopt microstrip lines and are mutually and vertically connected;
the transition section is arranged between the main radio frequency transmission path and a GCPW serving as a radio frequency input end, and the GCPW is used for being connected with the UTC-PD;
a radio frequency choke coil is arranged on the direct current transmission branch circuit, and one side of the direct current transmission branch circuit, which is far away from the radio frequency transmission main circuit, is a direct current input end;
the E plane probe is arranged in the rectangular waveguide cavity, and the E plane probe is connected with the radio frequency transmission main path through a matching section;
one side of the rectangular waveguide cavity, which extends along the length direction of the rectangular waveguide cavity and is far away from the microstrip circuit, is a waveguide output end, so that the waveguide type integrated UTC-PD device is used as a millimeter wave source device with a working frequency band covering a W wave band.
In some embodiments of the present application, the housing is formed by splicing an upper housing and a lower housing, and the rectangular waveguide cavity and a device cavity for accommodating the microstrip circuit are formed inside the housing, and the device cavity is used for accommodating the UTC-PD and the microstrip circuit which are connected to each other;
and the shell is respectively provided with an optical fiber input port, an SMA interface and a waveguide output port.
In some embodiments of the present application, the optical fiber input port is configured to interface with the radio frequency input terminal via the UTC-PD, such that a tapered optical fiber is inserted into the device cavity from the optical fiber input port and aligned with an optical waveguide on the UTC-PD, such that light is input to the UTC-PD, and the UTC-PD performs photoelectric conversion to generate a millimeter wave signal and input the millimeter wave signal to the radio frequency input terminal;
the SMA interface is used for being connected with the direct current input end so as to apply direct current bias voltage to the microstrip circuit;
the waveguide output port is used for being connected with the waveguide output port so that the radio-frequency signal is output through the rectangular waveguide cavity.
In some embodiments of the present application, the rf choke is a sector branch, and a vertex of the sector branch is disposed on the dc transmission branch.
In some embodiments of the present application, the radius of the sector branch and the distance between the vertex and the main rf transmission path are all 1/4 wavelength corresponding to the center frequency of the W band.
In some embodiments of the present application, the microstrip circuit integration is printed on a PCB circuit board.
In some embodiments of the present application, the matching section comprises: a plurality of microstrip lines connected in series.
In some embodiments of the present application, a metal via is provided on the GCPW for gold wire bonding connection with the UTC-PD.
In some embodiments of the present application, the dc transmission branch includes a first microstrip line portion and a second microstrip line portion connected to each other, and a width of the first microstrip line portion is smaller than a width of the second microstrip line portion;
one end of the first microstrip line, which is far away from the second microstrip line, is connected with the radio frequency transmission main path;
and one end of the second microstrip line, which is far away from the first microstrip line, is used as the direct current input end and is coaxially connected with the SMA interface.
In some embodiments of the present application, the reflection coefficient of the rf input is less than-17 dB, and the transmission coefficient of the rf input is greater than-0.21 dB;
the isolation from the radio frequency input to the direct current input is less than-17 dB.
Compared with a UTC-PD module converted by a silicon-based probe, the probe and a T-shaped bias circuit are directly printed together without gold wire bonding, the integration level is higher, and the transmission loss is smaller; compared with a UTC-PD module with a double-slit structure conversion function, the UTC-PD module with the matching section is converted in a probe form, so that the working frequency is higher, the bandwidth is larger, and the loss is smaller; according to the application, by adding the GCPW-microstrip line conversion structure and designing the whole guided wave structure based on the microstrip line, the problems of punching, narrow metal line width and the like are avoided, the cost is lower, the processing is easy, and the potential of high-frequency expansion is realized.
Additional advantages, objects, and features of the application will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the application. The objectives and other advantages of the application may be realized and attained by the structure particularly pointed out in the written description and drawings.
It will be appreciated by those skilled in the art that the objects and advantages that can be achieved with the present application are not limited to the specific details set forth above, and that these and other objects that can be achieved with the present application will be more clearly understood from the detailed description that follows.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application, are incorporated in and constitute a part of this application, and are not intended to limit the application. The components in the figures are not necessarily to scale, emphasis instead being placed upon illustrating the principles of the application. For purposes of illustrating and describing certain portions of the present application, the drawings may have been enlarged, i.e., may be larger, relative to other features of the exemplary devices actually made in accordance with the present application. In the drawings:
fig. 1 is a schematic diagram of a guided wave structure in a waveguide-type integrated UTC-PD apparatus according to an embodiment of the present disclosure.
Fig. 2 is a schematic structural diagram of a housing in a waveguide-type integrated UTC-PD apparatus with a waveguide output port according to an embodiment of the present disclosure.
Fig. 3 is a schematic diagram of a housing structure in a waveguide-type integrated UTC-PD apparatus provided in an embodiment of the present application and showing an SMA interface.
Fig. 4 is a schematic structural diagram of a waveguide-type integrated UTC-PD device used as a W-band millimeter wave source according to an embodiment of the present application.
Fig. 5 is a schematic S-parameter diagram of a guided wave structure in a waveguide-type integrated UTC-PD apparatus according to an embodiment of the present disclosure.
Reference numerals:
01. an optical fiber input port;
02. an SMA interface;
03. a waveguide output port;
1. a radio frequency input;
2. a DC input terminal;
3. a waveguide output end;
4. an upper housing;
5. a lower housing;
6. a microstrip circuit;
61. a transition section;
62. a T-type bias circuit;
621. a radio frequency transmission main path;
622. a DC transmission branch;
63. a radio frequency choke;
64. e, a plane probe;
7、UTC-PD；
8. a PCB circuit board;
9、GCPW；
91. a metal via;
10. a device accommodating cavity;
101. an optical fiber cavity;
102. the circuit board is provided with a cavity;
11. a rectangular waveguide cavity;
12. an optical fiber.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be described in further detail below with reference to the accompanying drawings. The exemplary embodiments and descriptions of the present application are provided to explain the present application and not to limit the present application.
Here, it should be further noted that, in order to avoid obscuring the present application with unnecessary details, only the structures and/or processing steps closely related to the scheme according to the present application are shown in the drawings, and other details not so relevant to the present application are omitted.
It should be emphasized that the term "comprises/comprising" when used herein, is taken to specify the presence of stated features, elements, steps or components, but does not preclude the presence or addition of one or more other features, elements, steps or components.
It is also noted herein that the term "coupled," if not specifically stated, may refer herein to not only a direct connection, but also an indirect connection in which an intermediate is present.
Hereinafter, embodiments of the present application will be described with reference to the accompanying drawings. In the drawings, the same reference numerals denote the same or similar parts, or the same or similar steps.
The embodiment of the application provides a waveguide type integrated UTC-PD device, which is mainly used for solving the following problems of the existing waveguide type integrated UTC-PD device:
1. the conversion structure in the form of a probe has large bandwidth and small loss, but is a plug-in structure and small in size, and if the dielectric substrate is difficult to cut, the conversion structure needs to be printed separately from the bias circuit and then bonded together, so that the cost loss is increased.
2. The double-slit CPW-rectangular waveguide has narrow conversion bandwidth and high transmission loss.
The CPW transmission line has small loss, but has small line width and line spacing and high processing difficulty in high-frequency application. In addition, in the prior art, a grounded coplanar waveguide GCPW is mostly used for improving the performance, and a metal through hole is difficult to process at high frequency (such as a W wave band).
In view of these problems, the present apparatus is intended to: a GCPW-microstrip conversion structure is added, a T-shaped bias circuit and microstrip-rectangular waveguide conversion in an E-plane probe form are designed on the basis of microstrip lines, the microstrip-rectangular waveguide conversion is integrated with a single-row carrier photodiode UTC-PD, a broadband, low-loss and high-integration millimeter wave source device is realized, and the working frequency band of the millimeter wave source device can cover the whole W wave band (75-110 GHz).
The working principle of the waveguide type integrated UTC-PD device for W-band communication provided by the present application is as follows: two beams of laser with different wavelengths are input into the UTC-PD through an optical fiber, reverse voltage is applied to the UTC-PD through a T-shaped bias circuit, the UTC-PD converts difference frequency signals of the two beams of laser into radio frequency signals to be output, and the signals are coupled to the rectangular waveguide to be output through a micro-strip-waveguide conversion structure based on an E plane probe after passing through a CPW-micro-strip transition section and the bias circuit.
Based on this, in order to design a waveguide-type integrated UTC-PD device with a wide frequency band, low loss and high integration, an embodiment of the present application provides a waveguide-type integrated UTC-PD device, which specifically includes the following contents, with reference to fig. 1:
the waveguide structure is composed of a microstrip circuit 6 and a rectangular waveguide cavity 11 with the waveguide model WR-10, which are encapsulated in a shell and connected with each other;
the microstrip circuit 6 includes: the transition section 61, the T-type bias circuit 62 and the E-plane probe 64 are integrally arranged and sequentially connected, and the T-type bias circuit 62 includes: a radio frequency transmission main path 621 and a direct current transmission branch 622 using a microstrip line, which are vertically connected to each other;
the transition section 61 is arranged between the main rf transmission path 621 and a GCPW 9 as the rf input terminal 1, and the GCPW 9 is used for connecting with UTC-PD 7;
a radio frequency choke 63 is arranged on the dc transmission branch 622, and a dc input terminal 2 is arranged on a side of the dc transmission branch 622 away from the main radio frequency transmission path 621;
the E-plane probe 64 is disposed in the rectangular waveguide cavity 11, and the E-plane probe 64 is connected to the rf transmission main path 621 through a matching section;
one side of the rectangular waveguide cavity 11, which extends along the length direction and is far away from the microstrip circuit 6, is a waveguide output end 3, so that the waveguide type integrated UTC-PD device is used as a millimeter wave source device with a working frequency band covering a W wave band.
As can be seen from the above description, compared with a UTC-PD module converted by a silicon-based probe, the waveguide-type integrated UTC-PD apparatus provided in the embodiments of the present application has the advantages that the probe and the T-type bias circuit 62 are directly printed together, gold wire bonding is not required, the integration level is higher, and the transmission loss is smaller; compared with a UTC-PD module with a double-slit structure conversion function, the UTC-PD module with the matching section is converted in a probe form, so that the working frequency is higher, the bandwidth is larger, and the loss is smaller; according to the application, by adding the GCPW 9-microstrip line conversion structure and designing the whole guided wave structure based on the microstrip line, the problems of punching, narrow metal line width and the like are avoided, the cost is lower, the processing is easy, and the potential of high-frequency expansion is realized.
In order to further improve the packaging reliability of the waveguide-type integrated UTC-PD device, in the waveguide-type integrated UTC-PD device provided in the embodiments of the present application, referring to fig. 2 and 3, the housing in the waveguide-type integrated UTC-PD device specifically includes the following contents:
the shell is formed by splicing an upper shell 4 and a lower shell 5, the rectangular waveguide cavity 11 and a device containing cavity 10 for containing the microstrip circuit 6 are formed in the shell, and the device containing cavity 10 is used for containing the UTC-PD 7 and the microstrip circuit 6 which are connected with each other; the device cavity 10 is used for accommodating the microstrip circuit 6 and also used for accommodating the optical fiber 12, and referring to fig. 4 specifically, the device cavity 10 may be divided into an optical fiber cavity 101 and a circuit board cavity 102 which are connected to each other, where the optical fiber cavity 101 is used for accommodating the optical fiber 12, and the circuit board cavity 102 is used for accommodating the microstrip circuit 6.
The shell is respectively provided with an optical fiber input port 01, an SMA interface 02 and a waveguide output port 03.
Specifically, the waveguide type integrated UTC-PD device used as a W-band millimeter wave source includes an upper case 4, a lower case 5, a UTC-PD 7, a microstrip circuit 6, and an optical fiber. The upper shell 4 and the lower shell 5 are spliced to form a rectangular waveguide cavity 11 and a device accommodating cavity 10 for accommodating a microstrip circuit board where the microstrip circuit 6 is located. Fig. 2 and 3 show the outer structure of the chamber, respectively. The outer part of the shell comprises an optical fiber input port 01 for inputting dual-frequency optical signals; a standard SMA interface 02 for inputting a dc bias; a waveguide output port 03 of a WR-10 waveguide with a standard UG387/U flange. The UTC-PD 7, the microstrip circuit board and the optical fiber are placed in the cavity of the shell.
In order to further improve the application reliability of the waveguide-type integrated UTC-PD apparatus, referring to fig. 4, in the waveguide-type integrated UTC-PD apparatus provided in the embodiments of the present application, the optical fiber input port 01 is configured to be connected to the radio frequency input end 1 via the UTC-PD 7, so that a tapered optical fiber is inserted into the device cavity 10 from the optical fiber input port 01 and aligned with an optical waveguide on the UTC-PD 7, so that light is input to the UTC-PD, and the UTC-PD performs photoelectric conversion to generate a millimeter wave signal and input the millimeter wave signal to the radio frequency input end 1;
the SMA interface 02 is used for being connected with the dc input terminal 2 to apply a dc bias voltage to the microstrip circuit 6;
the waveguide output port 03 is used for connecting with the waveguide output end 3, so that the radio frequency signal is output through the WR-10 rectangular waveguide cavity 11.
Specifically, the UTC-PD 7 and the microstrip circuit board provided with the microstrip circuit 6 are placed in the cavity groove of the device cavity 10. The electrode of the UTC-PD 7 is connected with the GCPW 9 part of the microstrip circuit board through gold wire bonding. The tapered fiber is inserted into the cavity through fiber input port 01 and aligned with the optical waveguide on UTC-PD 7. The SMA interface 02 is connected to the dc input 2 of the microstrip circuit 6 for applying a dc bias voltage. The E plane probe 64 is inserted into the rectangular waveguide cavity 11 of the WR-10 to form a microstrip-rectangular waveguide conversion structure, and radio frequency signals are output through the WR-10 waveguide.
In order to further ensure the isolation of the rf signal and reduce the loss, in the waveguide-type integrated UTC-PD apparatus provided in the embodiment of the present application, the rf choke 63 is a sector branch, and the vertex of the sector branch is disposed on the dc transmission branch 622.
Specifically, the dc transmission branch 622 has a sector branch, which serves as an rf choke 63 to prevent rf signals in the operating band from flowing through and causing energy loss.
In order to further improve the application reliability of the rf choke 63, in the waveguide-type integrated UTC-PD apparatus provided in the embodiment of the present application, the radius of the sector branch and the distance between the vertex and the rf transmission main path 621 are all 1/4 wavelength corresponding to the center frequency of the W band.
Specifically, the radius of the sector branch and the distance from the sector vertex to the T-junction (the connection between the dc transmission branch 622 and the rf transmission main path 621) of the T-bias circuit 62 are both 1/4 wavelength corresponding to the center frequency of the W-band.
In order to further improve the integration reliability, in the waveguide-type integrated UTC-PD apparatus provided in the embodiment of the present application, the microstrip circuit 6 is integrally printed on the PCB circuit board 8.
Specifically, microstrip circuit 6 includes a transition 61 (also referred to as GCPW 9-microstrip transition), a T-bias circuit 62, and an E-plane probe 64. The micro-strip circuit 6 is integrally printed on the PCB 8, and a 127-micron thick Rogers RT/duroid 5880 plate can be selected and cut to obtain a required shape.
In order to further improve the reliability of the matching section, in the waveguide-type integrated UTC-PD apparatus provided in the embodiments of the present application, the matching section includes: a plurality of microstrip lines connected in series.
Specifically, an inductive microstrip line is connected in series between the E-plane probe 64 and the T-type bias circuit 62 to achieve impedance matching and increase the bandwidth of the conversion structure.
In order to improve the connection reliability with the UTC-PD 7 and improve the convenience of gold wire bonding between the GCPW 9 and the UTC-PD 7, in the waveguide integrated UTC-PD device provided in the embodiments of the present application, a metal via 91 is provided on the GCPW 9 for performing gold wire bonding connection with the UTC-PD 7.
In particular, the rf input 1 uses a GCPW 9 with metal via 91 to facilitate wire bonding with UTC-PD 7. The GCPW 9 is converted into a microstrip line and then connected to the T-shaped bias circuit 62.
In order to facilitate connection with the SMA interface 02 coaxial line, in the waveguide-type integrated UTC-PD apparatus provided in this embodiment of the present application, the dc transmission branch 622 includes a first microstrip line portion and a second microstrip line portion that are connected to each other, and a width of the first microstrip line is smaller than a width of the second microstrip line;
one end of the first microstrip line, which is far away from the second microstrip line, is connected with the radio frequency transmission main path 621;
one end of the second microstrip line, which is far away from the first microstrip line, is used as the direct current input end 2 and is coaxially connected with the SMA interface 02.
Specifically, the dc transmission branch 622 may use a thin high-resistance microstrip line, which is widened at the end to be connected to the coaxial line of the SMA interface 02.
In order to further prove the application reliability of the waveguide type integrated UTC-PD device, in the waveguide type integrated UTC-PD device provided in the embodiments of the present application, the reflection coefficient of the radio frequency input terminal 1 is less than-17 dB, and the transmission coefficient of the radio frequency input terminal 1 is greater than-0.21 dB;
the isolation from the radio frequency input terminal 1 to the direct current input terminal 2 is less than-17 dB.
Specifically, the S parameter of the waveguide structure is shown in FIG. 5, and the reflection coefficient (S) at the port 1 of the RF input terminal 11 ) Below-17 dB, the transmission coefficient (S) 21 ) Greater than-0.21 dB, isolation of RF input 1 to DC input 2 (S) 31 ) Below-17 dB.
To sum up, the waveguide integrated UTC-PD apparatus provided in the embodiment of the present application is integrated with a waveguide by the T-bias circuit 62 and the CPW-waveguide conversion structure. The wave guide structure is in the whole W wave band, the input port reflection coefficient is below-17 dB, the output port transmission coefficient is larger than-0.21 dB, and the radio frequency-direct current port isolation degree is below-17 dB. Compared with the waveguide integrated UTC-PD device, the waveguide integrated UTC-PD device provided in the embodiments of the present application has at least the following advantages:
1. compared with a UTC-PD device converted by a silicon-based probe, the probe of the device is directly printed with the T-shaped bias circuit 62 without gold wire bonding, the integration level is higher, and the transmission loss is smaller.
2. Compared with a UTC-PD device with double-slit structure conversion, the device adopts the probe form conversion with a matching section, and has the advantages of higher working frequency, larger bandwidth and smaller loss.
3. With the optimized fan-shaped radio frequency choke 63, the isolation between the radio frequency and the direct current input end 2 is higher, and the working bandwidth is larger.
To further illustrate the present solution, the present application also provides a specific application example of a waveguide-type integrated UTC-PD device for use as a W-band millimeter wave source, comprising an upper housing 4, a lower housing 5, a UTC-PD 7, a microstrip circuit 6 and an optical fiber. The upper shell 4 and the lower shell 5 are spliced to form a rectangular waveguide cavity 11 and a device accommodating cavity 10 for accommodating a microstrip circuit board where the microstrip circuit 6 is located. Fig. 2 and 3 show the outer structure of the chamber, respectively. The outer part of the shell comprises an optical fiber input port 01 for inputting dual-frequency optical signals; a standard SMA interface 02 for inputting a dc bias; a waveguide output port 03 with a standard UG387/U flange WR-10 waveguide. The UTC-PD 7, the microstrip circuit board and the optical fiber are placed in the cavity of the shell.
Fig. 1 shows a waveguide structure composed of the microstrip circuit 6 and the rectangular waveguide cavity 11. The microstrip circuit 6 includes a transition 61 (which may also be referred to as a GCPW 9-microstrip transition), a T-bias circuit 62, and an E-plane probe 64. The micro-strip circuit 6 is integrally printed on the PCB 8, and a 127-micron thick Rogers RT/duroid 5880 plate can be selected and cut to obtain a required shape.
Firstly, the radio frequency input end 1 uses the GCPW 9 with the metal via hole 91, so that the radio frequency input end is conveniently bonded with the UTC-PD 7 gold wire. The GCPW 9 is converted into a microstrip line and then connected to the T-shaped bias circuit 62.
Second, the T-bias circuit 62 includes a main rf transmission path 621 and a dc transmission path 622.
The dc transmission branch 622 uses a thin high-resistance microstrip line, which is widened at the end to connect with the SMA interface 02 coaxial line.
The dc transmission branch 622 has a sector branch, which serves as an rf choke 63 to prevent rf signals in the operating band from flowing through and causing energy loss.
The radius of the sector branch and the distance from the sector vertex to the T-junction of the T-bias circuit 62 (the connection between the dc transmission branch 622 and the rf transmission main path 621) are both 1/4 wavelength corresponding to the center frequency of the W-band.
Thirdly, a section of inductive fine strip line is connected in series between the E-plane probe 64 and the microstrip line to realize impedance matching, so that the bandwidth of the conversion structure is larger.
The E plane probe 64 is inserted from the center of the broad side of the WR-10 rectangular waveguide and is parallel to the direction of the main mode electric field in the rectangular waveguide.
The distance from the insertion position of the E plane probe 64 to the short-circuit surface of the waveguide is 1/4 wavelength corresponding to the central frequency of the W waveband, so that the maximum coupling efficiency is obtained.
The S parameter of the waveguide structure is shown in FIG. 5, the reflection coefficient (S) of the 1 port of the RF input end 11 ) Below-17 dB, transmission coefficient (S) 21 ) Greater than-0.21 dB, isolation of RF input 1 to DC input 2 (S) 31 ) Below-17 dB.
Referring to fig. 4, the utc-PD 7 and the microstrip circuit board provided with the microstrip circuit 6 are placed in the cavity recess of the device cavity 10. The electrode of the UTC-PD 7 is connected with the GCPW 9 part of the microstrip circuit board through gold wire bonding. The tapered fiber is inserted into the cavity through the fiber input port 01 and aligned with the optical waveguide on the UTC-PD 7. The SMA interface 02 is connected to the dc input 2 of the microstrip circuit 6 for applying a dc bias voltage. The E plane probe 64 is inserted into the rectangular waveguide cavity 11 of the WR-10 to form a microstrip-rectangular waveguide conversion structure, and radio frequency signals are output through the WR-10 waveguide.
Therefore, the application example of the application has the following beneficial effects:
1. a novel waveguide type integrated UTC-PD device is provided, and has the characteristics of low loss, large bandwidth and high integration degree as a millimeter wave source working in a W wave band.
2. The bias circuit is provided with fan-shaped branches as radio frequency chokes 63, provides bias voltage for UTC-PD 7, ensures the isolation of radio frequency signals and reduces loss.
3. The microstrip-waveguide transition based on the E-plane probe 64 with matching sections (fine strip lines) ensures a wide operating bandwidth and low loss.
4. The bias circuit and the E-plane probe 64 are printed on the same PCB 8 and then cut to the desired shape of the circuit board, the whole module has the characteristic of high integration.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made to the embodiment of the present application for those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (10)
1. A waveguide-type integrated UTC-PD device, comprising: the waveguide structure is composed of a micro-strip circuit and a rectangular waveguide cavity with the waveguide model of WR-10, wherein the micro-strip circuit and the rectangular waveguide cavity are packaged in a shell and connected with each other;
the microstrip circuit includes: integrated changeover portion, T type bias circuit and the E plane probe that sets up and connect gradually, just T type bias circuit includes: a radio frequency transmission main circuit and a direct current transmission branch circuit which adopt microstrip lines and are mutually and vertically connected;
the transition section is arranged between the main radio frequency transmission path and a GCPW serving as a radio frequency input end, and the GCPW is used for being connected with the UTC-PD;
a radio frequency choke coil is arranged on the direct current transmission branch circuit, and a direct current input end is arranged on one side of the direct current transmission branch circuit, which is far away from the radio frequency transmission main circuit;
the E plane probe is arranged in the rectangular waveguide cavity, and the E plane probe is connected with the radio frequency transmission main path through a matching section;
one side of the rectangular waveguide cavity, which extends along the length direction of the rectangular waveguide cavity and is far away from the microstrip circuit, is a waveguide output end, so that the waveguide type integrated UTC-PD device is used as a millimeter wave source device with a working frequency band covering a W wave band.
2. The waveguide-based integrated UTC-PD device of claim 1, wherein said housing is formed by splicing an upper housing and a lower housing, and said housing has formed therein said rectangular waveguide cavity and a device cavity for receiving said microstrip circuit, said device cavity for receiving said UTC-PD and said microstrip circuit in contact;
and the shell is respectively provided with an optical fiber input port, an SMA interface and a waveguide output port.
3. The waveguide-type integrated UTC-PD apparatus of claim 2, wherein the fiber input port is configured to interface with the rf input port via the UTC-PD such that a tapered fiber is inserted into the device cavity from the fiber input port and aligned with the optical waveguide of the UTC-PD such that light is input to the UTC-PD, which performs optical-to-electrical conversion to generate millimeter-wave signals for input to the rf input port;
the SMA interface is used for being connected with the direct current input end so as to apply direct current bias voltage to the microstrip circuit;
the waveguide output port is used for being connected with the waveguide output end, so that the radio frequency signal is output through the WR-10 rectangular waveguide cavity.
4. The waveguide-based integrated UTC-PD device of claim 1, wherein said rf choke is a fan-shaped stub, and wherein the apex of said fan-shaped stub is disposed on said dc transmission branch.
5. The waveguide-type integrated UTC-PD device of claim 4, wherein the radius of said sector branch and the distance between said vertex and said main rf transmission path are all 1/4 wavelength corresponding to the W-band center frequency.
6. The waveguide-type integrated UTC-PD device of claim 1, wherein said microstrip circuitry is integrally printed on a PCB circuit board.
7. The waveguide-type integrated UTC-PD device of claim 1, wherein said matching section comprises: a plurality of microstrip lines connected in series.
8. The waveguide-type integrated UTC-PD device of claim 1, wherein said GCPW has metal vias thereon for gold wire bonding connections to said UTC-PD.
9. The waveguide-type integrated UTC-PD device of claim 2, wherein said dc transmission branch comprises first and second microstrip line sections connected together, the width of said first microstrip line section being smaller than the width of said second microstrip line section;
one end of the first microstrip line, which is far away from the second microstrip line, is connected with the radio frequency transmission main path;
and one end of the second microstrip line, which is far away from the first microstrip line, is used as the direct current input end and is coaxially connected with the SMA interface.
10. The waveguide-type integrated UTC-PD device according to any one of claims 1 to 9, wherein the reflection coefficient of said radio frequency input is less than-17 dB, the transmission coefficient of said radio frequency input is greater than-0.21 dB;
the isolation from the radio frequency input to the direct current input is less than-17 dB.
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