CN111371410A - Terahertz quartic harmonic mixer - Google Patents
Terahertz quartic harmonic mixer Download PDFInfo
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- CN111371410A CN111371410A CN201811591986.9A CN201811591986A CN111371410A CN 111371410 A CN111371410 A CN 111371410A CN 201811591986 A CN201811591986 A CN 201811591986A CN 111371410 A CN111371410 A CN 111371410A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1408—Balanced arrangements with diodes
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/16—Multiple-frequency-changing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
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- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention relates to a terahertz fourth harmonic mixer, which comprises: the device comprises a radio frequency input waveguide structure (1), a local oscillator input waveguide structure (2), a first quartz circuit structure (3), a second quartz circuit structure (4), a planar circuit channel (5), a grounding step (6), an intermediate frequency output transition circuit structure (7) and a Schottky barrier diode (8); a first quartz circuit structure (3), a second quartz circuit structure (4) and an intermediate frequency output transition circuit structure (7) are arranged in the planar circuit channel (5); a grounding step (6) is fixed on one side of the end part of the first quartz circuit structure (3), one side of the other end part of the first quartz circuit structure is fixed with one end of the second quartz circuit structure (4), and the first quartz circuit structure and the second quartz circuit structure are arranged in a vertically staggered manner; a radio frequency input waveguide structure (1) is fixed at one end close to the first quartz circuit structure (3), a Schottky barrier diode (8) is fixed at one side of the radio frequency input waveguide structure, and a local oscillator input waveguide structure (2) is fixed at the other end close to the radio frequency input waveguide structure.
Description
Technical Field
The invention belongs to the technical field of terahertz solid-state circuits and terahertz devices, and particularly relates to a terahertz fourth harmonic mixer.
Background
The terahertz (THz) frequency band is an electromagnetic wave frequency band between Microwave (Microwave) and Infrared (Infrared), the frequency range is 0.1THz-10THz, the terahertz is connected with Microwave millimeter waves at a low frequency end, and the terahertz is connected with Infrared at a high frequency end, so that the terahertz electromagnetic wave is a frequency band which is transited from macroscopic electronics to microscopic photonics. The terahertz wave has the advantages that the terahertz wave has the superior characteristics, so that the terahertz wave can be applied to many scenes, has better directivity, higher time and space resolution and superior bandwidth characteristics compared with microwave millimeter waves, and can be applied to high-precision detection radars, precise guidance, high-resolution imaging and high-speed communication; compared with light waves, terahertz has good penetrability, lower photon energy and lower radiation energy, so that the terahertz can be applied to the fields of target tracking detection, safety inspection, biomedicine and the like in special environments. Besides, terahertz waves can be applied to the fields of radio astronomy, nondestructive testing and the like.
At present, the terahertz low-frequency end mainly adopts an electron-like theory for research and engineering practice, and the terahertz high-frequency end adopts an optical-like theory for research. At present, the two theories cannot completely and effectively solve the problem of the terahertz waveband, so the terahertz waveband is also called as a terahertz gap.
At the terahertz low-frequency end, normal-temperature high-sensitivity coherent detection of terahertz waves is always a research hotspot, and the normal-temperature coherent detection generally adopts a superheterodyne receiver form. The ideal front end of the superheterodyne receiver consists of an antenna, a low noise amplifier, a local oscillation link, a mixer and an intermediate frequency link. In the terahertz frequency band, the low noise amplifier is difficult to obtain at present due to the limitation of semiconductor technology and the like, so that the performance of the mixer directly determines the performance of a receiver. The mixer may be of various types, such as passive mixing, active mixing, fundamental mixing, and harmonic mixing.
In the terahertz frequency band, a schottky barrier diode occupies a significant position, a schottky varactor is widely applied to a frequency multiplier, and a schottky barrier varactor is widely applied to a mixer and a detector. Schottky barrier diodes have undergone the development of whisker contact structures, planar channel structures, and quasi-vertical structures. The whisker tentacle contact structure Schottky barrier diode has the earliest appearance time, but is not resistant to mechanical strength, and the application field is limited; compared with a Schottky barrier diode with a planar channel structure, the Schottky barrier diode with the quasi-vertical structure has lower parasitic effect and lower high-frequency resistance, and is suitable for designing a high-frequency harmonic mixer.
With the increase of frequency, the traditional microstrip line cannot meet the transmission requirement of the terahertz wave, so that a suspension microstrip form is required, and the assembly difficulty is improved. Meanwhile, it is difficult to obtain a high-power local oscillation driving signal of the frequency mixer. Meanwhile, the cavity processing difficulty and the quartz circuit processing difficulty are increased suddenly. The quartz circuit substrate is relatively brittle; therefore, it is easily broken at the time of cutting and assembling.
Disclosure of Invention
The invention aims to solve the defects of the existing frequency mixer, and provides a terahertz fourth harmonic frequency mixer which is based on a 0.67THz frequency mixer, adopts a fourth harmonic frequency mixing mode, and greatly reduces the requirement on the local oscillation driving signal power of the frequency mixer, wherein the required local oscillation driving signal frequency is only 1/4 of the radio frequency signal frequency. Since the quartz circuit length to width ratio exceeds the process ratio, i.e., is generally less than 12:1, the quartz circuit is divided into two sections. Wherein, first quartz circuit adopts the installation of back-off suspension form, is supported by ground connection step and second quartz circuit, greatly reduced the assembly degree of difficulty. The quartz circuit and the intermediate frequency output transition circuit are connected through gold wires, so that the assembly difficulty is reduced.
In order to achieve the above object, the present invention provides a terahertz fourth harmonic mixer, including: the device comprises a radio frequency input waveguide structure, a local oscillator input waveguide structure, a first quartz circuit structure, a second quartz circuit structure, a planar circuit channel, a grounding step, an intermediate frequency output transition circuit structure and a Schottky barrier diode;
a first quartz circuit structure, a second quartz circuit structure and an intermediate frequency output transition circuit structure are arranged in the planar circuit channel, a grounding step is fixed on one side of the end part of the first quartz circuit structure, one side of the other end part of the first quartz circuit structure is fixed with one end of the second quartz circuit structure, and the first quartz circuit structure, the second quartz circuit structure and the second quartz circuit structure are arranged in a vertically staggered manner; a radio frequency input waveguide structure is fixed at one end close to the first quartz circuit structure, a Schottky barrier diode is fixed at one side of the radio frequency input waveguide structure, and a local oscillator input waveguide structure is fixed at the other end close to the radio frequency input waveguide structure; the second quartz circuit structure is fixedly connected with the intermediate frequency output transition circuit structure.
As an improvement of the above technical solution, the first quartz circuit structure is an inverted suspension structure, that is, the front of the first quartz circuit structure is placed downward, and the two ends of the first quartz circuit structure are respectively and correspondingly fixed with the grounding step and the second quartz circuit structure, which play a role in supporting the first quartz circuit structure, so that the first quartz circuit structure is an inverted suspension microstrip line.
As one improvement of the above technical solution, one side of the first quartz circuit structure is fixed with the grounding step through a conductive adhesive; one side of the first quartz circuit structure and one side of the second quartz circuit structure are fixed through conductive adhesive.
As an improvement of the above technical solution, the first quartz circuit structure includes: the system comprises a grounding circuit structure, a radio frequency input waveguide-suspended microstrip conversion probe, a local oscillator input waveguide-suspended microstrip probe, a local oscillator low-pass filter, a first matching branch, a second matching branch and a third matching branch;
the grounding circuit structure is connected with the radio frequency input waveguide-suspended microstrip conversion probe, the radio frequency input waveguide-suspended microstrip conversion probe is connected with a first matching branch, and the first matching branch is connected with a Schottky barrier diode fixed on the first quartz circuit structure and used for optimizing radio frequency signals captured by the radio frequency input waveguide-suspended microstrip conversion probe, minimizing loss of the radio frequency signals and inputting the optimized radio frequency signals into the Schottky barrier diode; the Schottky barrier diode is connected with the local oscillator low-pass filter through conductive adhesive, the local oscillator low-pass filter is connected with one end of the local oscillator input waveguide-suspended microstrip probe through a second matching branch knot, and the local oscillator low-pass filter is used for optimizing a local oscillator signal captured by the local oscillator input waveguide-suspended microstrip probe, minimizing the loss of the local oscillator signal, outputting the local oscillator signal to the Schottky barrier diode, and mixing the local oscillator signal with an optimized radio frequency signal output from the Schottky barrier diode; and the other end of the local oscillator input waveguide-suspended microstrip probe is connected with the third matching branch knot, so that the frequency-mixed signal is optimized, the loss of the frequency-mixed signal is minimized, and the frequency-mixed signal is output.
Specifically, the grounding circuit structure grounds a direct current signal generated by unbalanced mixing and provides virtual grounding for a radio frequency input signal; radio frequency input waveguide-suspended microstrip conversion probe enables radio frequency input signals to be subjected to TE main mode from waveguide mode10Converting the micro-strip quasi-plane wave mode into a suspended micro-strip quasi-plane wave mode TEM; the local oscillator input waveguide-suspended microstrip probe respectively makes local oscillator input signals from a waveguide mode main mode TE10Converting the micro-strip quasi-plane wave mode into a suspended micro-strip quasi-plane wave mode TEM; the local oscillator low pass filter can prevent radio frequency loss from leaking from the local oscillator waveguide and input signals through the local oscillator. Wherein, the thickness of first quartz circuit structure is 50um, and the thickness of metal wiring is 3 um.
As an improvement of the above technical solution, the second quartz circuit structure includes: a medium-frequency low-pass filter and a transition stub; the intermediate frequency low-pass filter is connected with the transition branch knot; the intermediate frequency low-pass filter is used for preventing the local oscillator input signal from being output from a port of the intermediate frequency low-pass filter and performing lossless output on the intermediate frequency signal; and the transition branch knot is used for ensuring the assembly of the second quartz circuit structure. Wherein, the thickness of second quartz circuit structure is 50um, and the thickness of metal wiring is 3 um.
As an improvement of the above technical solution, the second quartz circuit structure is a forward mounting structure, and the other end of the second quartz circuit structure is fixedly connected with the intermediate frequency output transition circuit structure through a gold wire bonding wire.
As one improvement of the above technical solution, the rf input waveguide structure adopts an rf signal input waveguide model WR1.5, and its cross-sectional dimension is 381um × 120um, which is reduced by 71um in height compared to the normal cross-sectional dimension 381um × 191 um; the local oscillator input waveguide structure is a local oscillator signal input waveguide model WR5.1 with a cross-sectional dimension of 1295um x 324um, which is reduced in height by 324um compared to the normal cross-sectional dimension of 1295um x 648 um.
As an improvement of the above technical solution, the height of the ground step is equal to the suspension height of the first quartz circuit structure minus the thickness of the conductive adhesive; the thickness of the conductive adhesive is preferably 10-15um, so that the conductive adhesive is convenient to assemble; the height of the ground step is preferably 30 um.
As an improvement of the above technical solution, the schottky diode is a quasi-vertical schottky diode and an anti-parallel schottky diode. Specifically, the first quartz circuit structure is provided with a reverse parallel Schottky diode which is registered with the vertical structure through conductive adhesive.
The working principle of the terahertz fourth harmonic mixer is as follows: local oscillation signals and radio frequency signals pass through the waveguide-suspended microstrip conversion probe and are applied to the Schottky barrier diode in a quasi-TEM wave mode. The Schottky barrier diode is driven by the local oscillator signal to carry out frequency mixing processing on the radio frequency signal and the local oscillator signal to generate each subharmonic signal. After filtering processing is carried out through an intermediate frequency low-pass filter, a required fourth harmonic mixing signal is obtained, and the signal is output through an intermediate frequency output circuit structure.
The invention has the advantages that:
the invention adopts a fourth harmonic mixing mode, and the required local oscillation driving signal frequency is only 1/4 of the radio frequency signal frequency, thereby greatly reducing the requirement on the local oscillation driving signal of the frequency mixer.
Drawings
FIG. 1 is a schematic diagram of a terahertz fourth harmonic mixer according to the present invention;
FIG. 2 is a side view of a THz fourth harmonic mixer of the present invention;
FIG. 3 is a schematic structural diagram of a first quartz circuit structure of a THz fourth harmonic mixer according to the present invention;
FIG. 4 is a schematic diagram of a second quartz circuit structure of a THz fourth harmonic mixer according to the present invention;
fig. 5 is a simulation curve between single sideband conversion losses of a terahertz fourth harmonic mixer of the present invention.
Reference numerals:
1. radio frequency input waveguide 2, local oscillator input waveguide 3, first quartz circuit
4. Second quartz circuit 5, planar circuit channel 6, ground step
7. Intermediate frequency output transition circuit 8, Schottky barrier diode 9, gold wire bonding wire
10. Conductive adhesive 11, grounding circuit structure 12 and radio frequency waveguide-suspended microstrip probe
13. Local oscillator low-pass filter 14 and local oscillator waveguide-suspended microstrip probe
15. Intermediate frequency low pass filter 16, transition branch
17. The first matching branch 18 and the second matching branch
19. Third matching branch
Detailed Description
The invention will now be further described with reference to the accompanying drawings.
As shown in fig. 1 and 2, the present invention provides a terahertz fourth harmonic mixer, which includes: the device comprises a radio frequency input waveguide structure 1, a local oscillator input waveguide structure 2, a first quartz circuit structure 3, a second quartz circuit structure 4, a planar circuit channel 5, a grounding step 6, an intermediate frequency output transition circuit structure 7 and a Schottky barrier diode 8;
as shown in fig. 1, a first quartz circuit structure 3, a second quartz circuit structure 4 and a medium frequency output transition circuit structure 7 are arranged in a planar circuit channel 5, a grounding step 6 is fixed on the lower side of the left end of the first quartz circuit structure 3, the lower side of the right end of the first quartz circuit structure is fixed with the upper side of the left end of the second quartz circuit structure, namely, the front side of the left end of the first quartz circuit structure 3 is fixed with the grounding step 6, and the front side of the right end of the first quartz circuit structure is fixed with the back side of the left end of the second quartz circuit structure; the first quartz circuit structure 3 and the second quartz circuit structure 4 are arranged in a vertically staggered manner; a radio frequency input waveguide structure 1 is fixed at the left end close to the first quartz circuit structure 3, a Schottky barrier diode 8 is fixed at the lower side of the first quartz circuit structure 3, and a local oscillator input waveguide structure 2 is fixed at the right end close to the first quartz circuit structure 3; the second quartz circuit structure 4 is fixedly connected with the intermediate frequency output transition circuit structure 7.
As shown in fig. 1, the lower side of the first quartz circuit structure 3 is the front side of the first quartz circuit structure 3, and the upper side thereof is the back side of the first quartz circuit structure 3; the lower side of the second quartz circuit structure is the reverse side of the second quartz circuit structure 4, and the upper side thereof is the front side of the second quartz circuit structure 4.
As an improvement of the above technical solution, as shown in fig. 1, the first quartz circuit structure is an inverted suspension structure, that is, the front of the first quartz circuit structure 3 is placed downward, and the two ends of the first quartz circuit structure are respectively and correspondingly fixed with the grounding step 6 and the second quartz circuit structure 4, which play a role of supporting the first quartz circuit structure 3, so that the first quartz circuit structure 3 forms an inverted suspension microstrip line.
As one improvement of the above technical solution, as shown in fig. 2, the lower side of the first quartz circuit structure 3 is fixed to the ground step 6 by a conductive adhesive; the lower side of the first quartz circuit structure 3 and the lower side of the second quartz circuit structure 4 are fixed by conductive adhesive.
As one of the improvements of the above technical solution, as shown in fig. 3, the first quartz circuit configuration 3 includes: the system comprises a grounding circuit structure 11, a radio frequency input waveguide-suspended microstrip conversion probe 12, a local oscillator input waveguide-suspended microstrip probe 14, a local oscillator low-pass filter 13, a first matching branch 17, a second matching branch 18 and a third matching branch 19;
the grounding circuit structure 11 is connected with a radio frequency input waveguide-suspended microstrip conversion probe 12, the radio frequency input waveguide-suspended microstrip conversion probe 12 is connected with a first matching branch 17, the first matching branch 17 is connected with a Schottky barrier diode 8 fixed on the first quartz circuit structure 3, and the Schottky barrier diode is used for optimizing a radio frequency signal captured by the radio frequency input waveguide-suspended microstrip conversion probe 12, minimizing the loss of the radio frequency signal, and inputting the optimized radio frequency signal to the Schottky barrier diode 8; the Schottky barrier diode 8 is connected with a local oscillator low-pass filter 13 through conductive adhesive, the local oscillator low-pass filter 13 is connected with one end of a local oscillator input waveguide-suspended microstrip probe 14 through a second matching branch 18, and the local oscillator low-pass filter 13 is used for optimizing local oscillator signals captured by the local oscillator input waveguide-suspended microstrip probe 14, minimizing loss of the local oscillator signals, outputting the local oscillator signals to the Schottky barrier diode 8, and mixing the local oscillator signals with optimized radio frequency signals output from the Schottky barrier diode 8; the other end of the local oscillator input waveguide-suspended microstrip probe 14 is connected with the 19-section third matching branch, so that the frequency-mixed signal is optimized, the loss of the frequency-mixed signal is minimized, and the frequency-mixed signal is output.
Specifically, the grounding circuit structure 11 grounds the dc signal generated by the unbalanced mixing, and provides a virtual ground for the rf input signal; the radio frequency input waveguide-suspended microstrip conversion probe 12 converts a radio frequency input signal from a waveguide mode main mode TE10Converting the micro-strip quasi-plane wave mode into a suspended micro-strip quasi-plane wave mode TEM; the local oscillator input waveguide-suspended microstrip probe 14 respectively uses the local oscillator input signals from the waveguide mode main mode TE10Converting the micro-strip quasi-plane wave mode into a suspended micro-strip quasi-plane wave mode TEM; the local oscillator low pass filter 13 can prevent radio frequency loss from leaking from the local oscillator waveguide and passes the local oscillator input signal. Wherein, the thickness of first quartz circuit structure 3 is 50um, and the thickness of metal wiring is 3 um.
As one of the improvements of the above technical solution, as shown in fig. 4, the second quartz circuit structure 4 includes: a medium-frequency low-pass filter 15 and a transition branch 16; the intermediate frequency low-pass filter 15 is connected with the transition branch 16; the function of the intermediate frequency low pass filter 15 is to prevent the local oscillator input signal from being output from the port of the intermediate frequency low pass filter, and to perform lossless output on the intermediate frequency signal; and a transition stub 16 for ensuring the assembly of the second quartz circuit structure. . Wherein, the thickness of second quartz circuit structure 4 is 50um, and the thickness of metal wiring is 3 um. Wherein, the transition branch is based on quartz circuit assembly and cavity processing size consideration. The minimum size of the cavity is limited by the size of the flange, but the internal circuit is usually smaller than this size, so that a plurality of transition branches are required.
As an improvement of the above technical solution, the second quartz circuit structure 4 is a forward mounting structure, and the other end thereof is fixedly connected to the intermediate frequency output transition circuit structure 7 through a gold wire bonding wire 9.
As one improvement of the above technical solution, the rf input waveguide structure 1 adopts an rf signal input waveguide model WR1.5, and its cross-sectional dimension is 381um × 120um, which is reduced by 71um in height compared to the normal cross-sectional dimension 381um × 191 um; the local oscillator input waveguide structure 2 is of the type WR5.1 with a cross-sectional dimension of 1295um x 324um, reduced in height by 324um compared to the normal cross-sectional dimension of 1295um x 648 um.
As one improvement of the above technical solution, the height of the ground step 6 is equal to the suspension height of the first quartz circuit structure 3 minus the thickness of the conductive paste 10; the thickness of the conductive adhesive 10 is 10-15um, preferably 15um, which is convenient for assembly; the height of the ground step 6 is preferably 30 um.
As an improvement of the above technical solution, the schottky diode 8 is a quasi-vertical schottky diode having an anti-parallel structure. Specifically, a quasi-vertical structure antiparallel schottky diode is mounted on the first quartz circuit structure 3 through a conductive paste 10.
The working principle of the terahertz fourth harmonic mixer is as follows:
local oscillator signals and radio frequency signals pass through the waveguide-suspended microstrip conversion probe 14 and are applied to the schottky barrier diode 8 in the form of a quasi-TEM wave. The schottky barrier diode 8 is driven by the local oscillator signal to perform frequency mixing processing on the radio frequency signal and the local oscillator signal to generate each subharmonic signal. After filtering processing is carried out through an intermediate frequency low-pass filter, a required fourth harmonic mixing signal is obtained, and the signal is output through an intermediate frequency output circuit structure.
In this example, in the mixer based on 0.67THz of the fourth harmonic mixer, the radio frequency input waveguide structure 1 and the local oscillator input waveguide structure 2 both use standard UG387 flanges, and the local oscillator input waveguide structure 2 is subjected to bending processing, so as to ensure that the normals of the radio frequency input waveguide structure 1 and the local oscillator input waveguide structure 2 coincide. And the radio frequency grounding end and the height of the channel are subjected to fillet treatment, so that a feed space is reserved for a milling cutter for machining.
The simulation results between the single-sided rf signal frequency and the band conversion loss of the 0.67THz fourth harmonic mixer of this example are shown in fig. 5. The simulation parameters are as follows: the radio frequency signal frequency f1 is 630GHz to 700GHz, the radio frequency signal power is-20 dBm, the local oscillator signal frequency f2 is 335GHz, and the local oscillator signal power is fixed at 10 mW. The input frequency of the intermediate frequency signal is f3 ═ 4 × f2-f1 |. As can be seen from FIG. 5, the optimal conversion loss of the 0.67THz fourth harmonic mixer designed by the invention is 10.5dB, and the flatness radio frequency bandwidth of the 3dB conversion loss is 55 GHz.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and are not limited. Although the present invention has been described in detail with reference to the embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (8)
1. A terahertz fourth harmonic mixer, comprising: the device comprises a radio frequency input waveguide structure (1), a local oscillator input waveguide structure (2), a first quartz circuit structure (3), a second quartz circuit structure (4), a planar circuit channel (5), a grounding step (6), an intermediate frequency output transition circuit structure (7) and a Schottky barrier diode (8);
a first quartz circuit structure (3), a second quartz circuit structure (4) and an intermediate frequency output transition circuit structure (7) are arranged in the planar circuit channel (5); a grounding step (6) is fixed on one side of the end part of the first quartz circuit structure (3), one side of the other end part of the first quartz circuit structure is fixed with one end of the second quartz circuit structure (4), and the first quartz circuit structure and the second quartz circuit structure are arranged in a vertically staggered manner; a radio frequency input waveguide structure (1) is fixed at one end close to the first quartz circuit structure (3), a Schottky barrier diode (8) is fixed at one side of the radio frequency input waveguide structure, and a local oscillator input waveguide structure (2) is fixed at the other end close to the radio frequency input waveguide structure; the second quartz circuit structure (4) is fixedly connected with the intermediate frequency output transition circuit structure (7).
2. The thz fourth harmonic mixer according to claim 1, wherein the first quartz circuit structure (3) is an inverted suspension structure, and a ground step (6) and a second quartz circuit structure (4) are respectively fixed to two ends of the first quartz circuit structure (3) and support the first quartz circuit structure.
3. The thz fourth harmonic mixer according to claim 1, characterized in that one side of the first quartz circuit structure (3) is fixed to the ground step (6) by means of a conductive adhesive (10); one side of the first quartz circuit structure (3) and one side of the second quartz circuit structure (4) are fixed through a conductive adhesive (10).
4. The terahertz fourth harmonic mixer according to claim 1, wherein the first quartz circuit structure (3) comprises: the device comprises a grounding circuit structure (11), a radio frequency input waveguide-suspended microstrip conversion probe (12), a local oscillator input waveguide-suspended microstrip probe (14), a local oscillator low-pass filter (13), a first matching branch (17), a second matching branch (18) and a third matching branch (19);
the grounding circuit structure (11) is connected with a radio frequency input waveguide-suspended microstrip conversion probe (12), the radio frequency input waveguide-suspended microstrip conversion probe (12) is connected with a first matching branch (17), the first matching branch (17) is connected with a Schottky barrier diode (8) fixed on the first quartz circuit structure (3), the Schottky barrier diode (8) is connected with a local oscillator low-pass filter (13) through conductive adhesive, and the local oscillator low-pass filter (13) is connected with one end of a local oscillator input waveguide-suspended microstrip probe (14) through a second matching branch (18); the other end of the local oscillator input waveguide-suspended microstrip probe (14) is connected with a third matching branch (19).
5. The terahertz fourth harmonic mixer according to claim 1, wherein the second quartz circuit structure (4) comprises: a medium-frequency low-pass filter (15) and a transition branch (16); the intermediate frequency low-pass filter (15) is connected with the transition branch (16).
6. The THz fourth harmonic mixer according to claim 5, wherein the second quartz circuit structure (4) is a positive-type structure, and the other end thereof is fixedly connected with the intermediate frequency output transition circuit structure (7) through a gold wire bonding wire (9).
7. The terahertz fourth harmonic mixer according to claim 1, wherein the height of the ground step (6) is equal to the suspension height of the first quartz circuit structure (3) minus the thickness of the conductive glue (10).
8. The thz fourth harmonic mixer according to claim 1, wherein the schottky diode (8) is a quasi-vertical schottky diode and an anti-parallel schottky diode.
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CN111900086A (en) * | 2020-07-27 | 2020-11-06 | 北京国联万众半导体科技有限公司 | Novel terahertz monolithic realization method |
CN113534056A (en) * | 2021-06-24 | 2021-10-22 | 南京信息工程大学 | Broadband millimeter wave second harmonic mixer |
CN113534056B (en) * | 2021-06-24 | 2024-01-19 | 南京信息工程大学 | Broadband millimeter wave second harmonic mixer |
CN113572430A (en) * | 2021-07-27 | 2021-10-29 | 中国科学院国家空间科学中心 | Solid terahertz monolithic second harmonic mixer circuit |
CN113572431A (en) * | 2021-07-27 | 2021-10-29 | 中国科学院国家空间科学中心 | Terahertz solid-state fundamental wave mixer circuit |
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