CN102904528A - Terahertz quasi-optical frequency multiplier - Google Patents
Terahertz quasi-optical frequency multiplier Download PDFInfo
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- CN102904528A CN102904528A CN2012103829489A CN201210382948A CN102904528A CN 102904528 A CN102904528 A CN 102904528A CN 2012103829489 A CN2012103829489 A CN 2012103829489A CN 201210382948 A CN201210382948 A CN 201210382948A CN 102904528 A CN102904528 A CN 102904528A
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Abstract
The invention provides a terahertz quasi-optical frequency multiplier, comprising a first blocking capacitor, a filter, a frequency multiplying antenna and a quasi-optical device, wherein the frequency multiplying antenna comprises an antenna and a nonlinear device, an input signal passes through the first blocking capacitor and the filter and then is loaded on the frequency multiplying antenna, and each harmonic component of the input signal is restrained by the filter after the input signal passes through the filter; the nonlinear device of the frequency multiplying antenna generates harmonic components to the input signal loaded on the frequency multiplying antenna; the antenna of the frequency multiplying antenna radiates required output signals; and the output signals are endowed with better directivity by virtue of the quasi-optical device. The terahertz quasi-optical frequency multiplier is small in size and light in weight, can easily implement space power synthesis and can serve as an efficient odd frequency multiplier.
Description
Technical field
The present invention relates to THz wave source technology field, particularly relate to the quasi-optical frequency multiplier of Terahertz.
Background technology
Terahertz is final stage exploited electromagnetic spectrum.The special performance of terahertz emission is so that THz imaging technology becomes one of current study hotspot.THz source is one of critical component of Terahertz system always.Can produce terahertz signal by vacuum electron device, also can produce local oscillation signal in conjunction with the mode of frequency multiplier by low frequency source.Low frequency source is a kind of more common mode in conjunction with the terahertz signal producing method of frequency multiplication.This mode has the advantages such as volume is little, lightweight than the vacuum electron device source; Phase-locked, modulation that simultaneously can be by low frequency source etc. realizes phase-locked, the modulation of terahertz signal etc.
Usually, the Terahertz frequency multiplier of employing is the frequency multiplier of waveguide-based.Because the Terahertz band wavelength is little, the mechanical features sizes such as Gu Bodaokou are little, are not easy to processing; In addition, be not easy to adopt the spatial power synthetic technology to improve terahertz signal power.
If the employing single tube structure can be realized the frequency multiplication of arbitrary number of times, but this frequency multiplication topological structure efficient is lower, is not suitable for the odd frequency multiplier.
In addition, in traditional odd frequency multiplier, nonlinear device adopts antiparallel to form of tubes.But this structure can not load biasing to nonlinear device simultaneously, thereby can lose a part of conversion efficiency.
Summary of the invention
The present invention proposes in view of the above problems, its objective is to propose a kind of quasi-optical frequency multiplier, and volume is little, and is lightweight, is easy to form the spatial power integrated array;
Another object of the present invention is to propose a kind of quasi-optical odd frequency multiplier, can realize the odd double frequency function.
Another object of the present invention is to propose a kind of quasi-optical odd frequency multiplier of setovering, and biasing has higher shg efficiency when can realize nonlinear device.
According to first aspect present invention, provide a kind of Terahertz quasi-optical frequency multiplier, comprise the first capacitance, filter, frequency multiplication antenna and quasi-optical device; Described frequency multiplication antenna comprises antenna and nonlinear device; Input signal is loaded on the frequency multiplication antenna after through the first capacitance, filter, and input signal is by filter, and the filtered device of the each harmonic component of input signal suppresses; The nonlinear device of frequency multiplication antenna produces harmonic component to the input signal that is loaded on the frequency multiplication antenna; The antenna of frequency multiplication antenna radiate required output signal; Quasi-optical device makes output signal have better directivity.
The quasi-optical frequency multiplier of described Terahertz also comprises choke induction; Direct current signal is carried on the frequency multiplication antenna through choke induction, and choke induction suppresses input signal and each harmonic component thereof.
The nonlinear device of frequency multiplication antenna is the Terahertz Schottky diode; Described antenna is flat plane antenna, and the centre frequency of flat plane antenna is output signal frequency.The frequency multiplication antenna adopts semiconductor technology to make, and the flat plane antenna of frequency multiplication antenna and described Schottky diode use same Semi-insulating GaAs material to be substrate.
Described filter is low pass filter, and the cut-off frequency of low pass filter is between the second harmonic frequency of frequency input signal and input signal; Perhaps described filter is band pass filter, and the centre frequency of band pass filter equals the frequency of input signal, and rejection band is contained the frequencies of harmonic components of input signal.
Described the first capacitance is very little to input signal and the loss of each harmonic component thereof, and the first capacitance blocking-up direct current signal is carried on the frequency multiplication antenna direct current signal.
Described quasi-optical device is the high resistance medium lens, and the frequency multiplication antenna is positioned at the focal position of lens; Perhaps described quasi-optical device is the semi-open metallic cavity of trumpet type, and the frequency multiplication antenna is positioned at the semi-open metallic cavity of trumpet type, and the bottom surface of loudspeaker is metal.
The dielectric material of described high resistance medium lens is High Resistivity Si, and the frequency multiplication antenna is close to the plane of high resistance medium lens.
The invention provides quasi-optical No. four frequency multipliers of a kind of 200GHz, the 50GHz input signal is by K feed-in, through entering the frequency multiplication antenna behind the first capacitance, the filter; The first capacitance is patch capacitor, appearance value 47uF; Filter is height impedance type Microstrip Low-Pass, and cut-off frequency is 60GHz, and near the inhibition degree 110GHz, 220GHz is greater than 25dB; The frequency multiplication antenna is the monolithic frequency multiplication antenna chip of GaAs base, and the antenna of frequency multiplication antenna adopts the logarithm period form, and working frequency range is 180-220GHz; One end of frequency multiplication antenna is connected to the ground; Direct current signal is carried on the frequency multiplication antenna through choke induction, and choke induction suppresses input signal and each harmonic component thereof; Choke induction is chip inductor, and its sense value is 10uH; The High Resistivity Si extended hemispherical lens is close to the frequency multiplication antenna back side, and the frequency multiplication antenna is positioned at the focal position of lens.
According to second aspect present invention, provide Terahertz quasi-optical odd frequency multiplier, comprise the first capacitance, filter, frequency multiplication antenna and quasi-optical device; Described frequency multiplication antenna comprises antenna and nonlinear device, described nonlinear device has symmetrical I-E characteristic and capacitance-voltage characteristics, nonlinear device is a pair of Terahertz Schottky diode, described a pair of Terahertz Schottky diode comprises the first Schottky diode and the second Schottky diode, the negative electrode of the first Schottky diode links to each other with the second Schottky diode anode, and the anode of the first Schottky diode links to each other with the negative electrode of the second Schottky diode; Input signal is loaded on the frequency multiplication antenna after through the first capacitance, filter, and input signal is by filter, and the filtered device of the each harmonic component of input signal suppresses; The nonlinear device of frequency multiplication antenna produces the odd harmonic component to the input signal that is loaded on the frequency multiplication antenna; The antenna of frequency multiplication antenna radiate required output signal; Quasi-optical device makes output signal have better directivity.
The invention provides the quasi-optical triductor of a kind of 270GHz, the 90GHz input signal enters the frequency multiplication antenna by waveguide-fin-line transition structure feed-in through the first capacitance, filter; The first capacitance is patch capacitor, appearance value 47uF; Filter is height impedance type Microstrip Low-Pass, and cut-off frequency is 100GHz, and near the inhibition degree 180GHz, 270GHz is greater than 25dB; The antenna of frequency multiplication antenna adopts the butterfly antenna form, and working frequency range is 260-280GHz; One end of frequency multiplication antenna is connected to the ground; Antenna, filter, transmission line all are produced on the quartz substrate; The frequency multiplication antenna is positioned at the semi-open metallic cavity of trumpet type, and the bottom surface of loudspeaker is metal, and the short circuit identity distance of antenna distance loudspeaker cavity is from being 1/4th of the corresponding space wavelength of 270GHz.
The invention provides the quasi-optical odd frequency multiplier of setovering of a kind of Terahertz, comprise the first capacitance, filter, frequency multiplication antenna, quasi-optical device, the second capacitance, choke induction, described frequency multiplication antenna comprises antenna, nonlinear device, electric capacity; Described nonlinear device comprises the first Schottky diode and the second Schottky diode, the negative electrode of described the first Schottky diode links to each other with the anode of the second Schottky diode, and the negative electrode of the second Schottky diode links to each other by the anode of electric capacity with the first Schottky diode; Input signal is loaded on the frequency multiplication antenna after through the first capacitance, filter, and the filtered device of the each harmonic component of input signal suppresses, and nonlinear device produces the odd harmonic component to the input signal that is loaded on the frequency multiplication antenna; The antenna of frequency multiplication antenna radiate required output signal; Quasi-optical device makes output signal have better directivity; Direct current signal is loaded on the anode of the first Schottky diode through choke induction by the feed-in of DC feedback end, and the minus earth of the second Schottky diode forms DC loop; One end of described frequency multiplication antenna links to each other with filter, and the other end is by capacity earth, thus realization radiofrequency signal loop.
The invention provides the quasi-optical triductor of setovering of a kind of 270GHz, comprise the first capacitance, filter, frequency multiplication antenna, quasi-optical device, the second capacitance, choke induction, described frequency multiplication antenna comprises antenna, nonlinear device, electric capacity; Described nonlinear device comprises the first Schottky diode and the second Schottky diode, the negative electrode of described the first Schottky diode links to each other with the anode of the second Schottky diode, and the negative electrode of the second Schottky diode links to each other by the anode of electric capacity with the first Schottky diode; The 90GHz signal enters the frequency multiplication antenna by waveguide-fin-line transition structure feed-in through the first capacitance, filter; The first capacitance is patch capacitor, appearance value 47uF, and the filtered device of the each harmonic component of input signal suppresses, and filter is height impedance type Microstrip Low-Pass, and cut-off frequency is 100GHz, and near the inhibition degree 180GHz, 270GHz is greater than 25dB; Nonlinear device produces the odd harmonic component to the input signal that is loaded on the frequency multiplication antenna; The antenna of frequency multiplication antenna radiate required output signal, and the antenna of frequency multiplication antenna adopts the butterfly antenna form, and working frequency range is 260-280GHz; Quasi-optical device is the semi-open metallic cavity of trumpet type, the bottom surface of loudspeaker is metal, the frequency multiplication antenna is positioned at the semi-open metallic cavity of trumpet type, and the short circuit identity distance of the semi-open metallic cavity of antenna distance trumpet type is from being 1/4th of the corresponding space wavelength of 270GHz; Direct current signal is loaded on the anode of the first Schottky diode through choke induction by the feed-in of DC feedback end, and the minus earth of the second Schottky diode forms DC loop; One end of described frequency multiplication antenna links to each other with filter, and the other end is by capacity earth, thus realization radiofrequency signal loop; Described antenna, filter, transmission line all are produced on the quartz substrate.
Beneficial effect of the present invention: according to the present invention, can realize little, the lightweight frequency multiplier of volume, be easy to simultaneously implementation space power synthetic, especially can be by the phase place of control low frequency source, the coherent superposition of implementation space signal.According to the present invention, can realize efficient odd frequency multiplier.
Description of drawings
It should be noted that the accompanying drawing in the following describes only schematically shows some embodiment, does not comprise all possible embodiment.
Accompanying drawing 1 is the quasi-optical frequency multiplier schematic diagram of a kind of Terahertz provided by the present invention;
Accompanying drawing 2a and Fig. 2 b are a kind of ways of realization of quasi-optical device of the present invention;
Accompanying drawing 3a and Fig. 3 b are the another kind of ways of realization of quasi-optical device of the present invention;
Accompanying drawing 4 is structural representations of quasi-optical No. four frequency multipliers of 200GHz;
Accompanying drawing 5 is quasi-optical No. four the frequency multiplier output spectrums of 200GHz;
Accompanying drawing 6 is the quasi-optical odd frequency multiplier of a kind of Terahertz provided by the present invention schematic diagrams;
Accompanying drawing 7 is the quasi-optical triductor structural representations of 270GHz;
Accompanying drawing 8 is the quasi-optical triductor output spectrums of 270GHz;
Accompanying drawing 9 is the quasi-optical odd frequency multiplier of a kind of Terahertz provided by the present invention schematic diagrams;
Accompanying drawing 10 is the quasi-optical odd frequency multiplication of Terahertz Principle of Antenna figure;
Accompanying drawing 11 is the quasi-optical triductor structural representations of 270GHz;
Figure 13 is the structural representation of Terahertz Schottky diode according to an embodiment of the invention.
Embodiment
The technical scheme of exemplary embodiment of the present invention is described below in conjunction with accompanying drawing.Obviously, described embodiment is a part of embodiment of the present invention, rather than whole embodiment.Described embodiment only is used for illustrating, rather than to the restriction of the utility model scope.Based on embodiments of the invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that obtains under the creative work prerequisite.
Although used first, second grade of word to describe a plurality of elements or component part among the application, these elements or component part should not be subjected to the restriction of these words.An element or component part and another element or component part only be used for to be distinguished in these words, and do not comprise " sequentially ".Therefore, with the first element discussed below or component part is called the second element or component part does not exceed the spirit and scope of the present invention yet.
Fig. 1 is the schematic diagram of the quasi-optical frequency multiplier of a kind of Terahertz provided by the present invention.As shown in Figure 1, the quasi-optical frequency multiplier of Terahertz comprises: capacitance 11, filter 12, frequency multiplication antenna 13, choke induction 14 and quasi-optical device 15.Wherein, described frequency multiplication antenna is comprised of antenna 131 and nonlinear device 132.Input signal, is loaded on the frequency multiplication antenna 13 behind capacitance 11, filter 12 by port one 6 feed-ins; The input signal that is loaded on the frequency multiplication antenna 13 produces harmonic component by the nonlinear device 132 on the frequency multiplication antenna 13; Antenna 131 on the frequency multiplication antenna 13 radiate required output signal.Quasi-optical device 15 further improves the radiance of antenna, makes output signal have better directivity.Nonlinear device 132 in the described frequency multiplication antenna 13 for example is Schottky diode, and Schottky diode is the Terahertz Schottky diode; Antenna 131 for example is flat plane antenna.The centre frequency of described flat plane antenna is output signal frequency.Described filter 12 can pass through input signal, suppresses the each harmonic component of input signal.Described filter 12 for example can be low pass filter, and its cut-off frequency is between the second harmonic frequency of frequency input signal and input signal; Described filter 12 also can be band pass filter, and its centre frequency equals frequency input signal, and rejection band is contained the frequencies of harmonic components of input signal.11 pairs of input signals of described capacitance and the loss of each harmonic component thereof are very little; Described choke induction 14 can suppress input signal and each harmonic component thereof.Direct current signal is by port one 7 feed-ins; Because the blocking effect of capacitance 11, direct current signal can be carried on the frequency multiplication antenna 13 effectively.Described quasi-optical device 15 can be the high resistance medium lens; Described high resistance medium lens, its dielectric material are High Resistivity Si.Frequency multiplication antenna 13 is positioned at the focal position of lens.
Fig. 2 a and Fig. 2 b have provided the first embodiment of quasi-optical device of the present invention.Fig. 2 b is the structural representation of the first embodiment of quasi-optical device of the present invention, and Fig. 2 a is the sectional view of the first embodiment of quasi-optical device of the present invention.Shown in Fig. 2 a and Fig. 2 b, the quasi-optical device of this embodiment is lens 52.Frequency multiplication antenna 51 is close to the plane of lens 52, and lens 52 adopt extended hemispherical lens.Certainly, lens 52 also can adopt ellipsoid lens, packaged lens etc.
Fig. 3 a and 3b have provided the second embodiment of quasi-optical device among the present invention.Fig. 3 a is the structural representation of this quasi-optical device embodiment, and Fig. 3 a is the sectional view of the embodiment of this quasi-optical device.Described quasi-optical device is the semi-open metallic cavity 52 of trumpet type.Frequency multiplication antenna 51 is positioned at semi-open metallic cavity 52.Semi-open metallic cavity 52 is tubaeform cavitys; The bottom surface of loudspeaker is metal, effectively reflected signal.
Fig. 4 is a kind of implementation structured flowchart of quasi-optical No. four frequency multipliers of 200GHz.The 50GHz signal enters frequency multiplication antenna 104 by K 101 feed-ins through capacitance 102, filter 103.Capacitance 102 is patch capacitor, appearance value 47uF; Filter 103 is height impedance type Microstrip Low-Pass, and cut-off frequency is 60GHz, and near the inhibition degree 110GHz, 220GHz is greater than 25dB.Frequency multiplication antenna 104 is the monolithic frequency multiplication antenna chip of GaAs base, and antenna adopts the logarithm period form, and working frequency range is 180-220GHz; Nonlinear device is Schottky diode.One end of frequency multiplication antenna links to each other with ground 106.Direct current signal is through choke induction 105 feed-ins.Choke induction 105 is chip inductor, and its sense value is 10uH.The dielectric substrate 107 of microstrip line is quartzy.High Resistivity Si extended hemispherical lens 108 is close to the frequency multiplication antenna back side.
Fig. 5 is the output spectrum of quasi-optical No. four frequency multipliers of 200GHz.Frequency input signal is 50GHz, and power is 20dBm; Direct current biasing is-1V; Output signal frequency is 200GHz, and power is 1.649dBm.
Fig. 6 is the quasi-optical odd frequency multiplier of a kind of Terahertz provided by the present invention schematic diagram.The quasi-optical odd frequency multiplier of this Terahertz comprises: capacitance 21, filter 22, frequency multiplication antenna 23 and quasi-optical device 24.Wherein, described frequency multiplication antenna 23 is comprised of antenna 31 and nonlinear device 232,233; Described nonlinear device has symmetrical I-V characteristic (I-E characteristic) and C-V characteristic (capacitance-voltage characteristics).Input signal, is loaded on the frequency multiplication antenna 23 behind capacitance 21, filter 22 by port 25 feed-ins; The input signal that is loaded on the frequency multiplication antenna 23 produces the odd harmonic component by the nonlinear device 232 on the frequency multiplication antenna 23,233; Antenna 231 on the frequency multiplication antenna 23 radiate the harmonic component signal of required output.Quasi-optical device 24 further improves the radiance of antenna, makes output signal have better directivity.The nonlinear device 232 of described frequency multiplication antenna 23 and 233 is Schottky diode pair.Described Schottky diode is to being comprised of the first Schottky diode 232 and the second Schottky diode 233; The negative electrode of the first Schottky diode 232 links to each other with the second Schottky diode 233 anodes; The anode of the first Schottky diode 232 links to each other with the negative electrode of the second Schottky diode 233.The antenna of described frequency multiplication antenna 23 is flat plane antenna; Its centre frequency equals output signal frequency.Described filter 22 can pass through input signal, suppresses the each harmonic component of input signal.Filter can be low pass filter, and its cut-off frequency is between the second harmonic frequency of frequency input signal and input signal.Filter also can be band pass filter, and its centre frequency equals frequency input signal, and rejection band is contained the frequencies of harmonic components of input signal.The appearance value of described capacitance 21 should guarantee input signal and the loss of each harmonic component thereof very little, thereby does not affect the radio frequency ground connection of above-mentioned signal.Described quasi-optical device 24 can be the high resistance medium lens, and its dielectric material is High Resistivity Si, for example is quasi-optical device as shown in Figure 2.Described quasi-optical device also can be the semi-open metallic cavity of trumpet type, for example is quasi-optical device as shown in Figure 3.
Fig. 7 is a kind of implementation structured flowchart of the quasi-optical triductor of 270GHz.The 90GHz signal enters frequency multiplication antenna 204 by waveguide-fin-line transition structure 201 feed-ins through capacitance 202, filter 203.Capacitance 202 is patch capacitor, appearance value 47uF; Filter 203 is height impedance type Microstrip Low-Pass, and cut-off frequency is 100GHz, and near the inhibition degree 180GHz, 270GHz is greater than 25dB.The antenna of frequency multiplication antenna 204 adopts the butterfly antenna form, and working frequency range is 260-280GHz; Nonlinear device is Schottky diode pair.One end of frequency multiplication antenna links to each other with ground 205.Antenna 204, filter 203, transmission line all are produced on the quartz substrate 207.Quasi-optical device is the semi-open metallic cavity 208 of trumpet type, and the bottom surface of loudspeaker is metal, and the short circuit identity distance of antenna distance loudspeaker cavity is from being 1/4th of the corresponding space wavelength of 270GHz.
Fig. 8 is the output spectrum of the quasi-optical triductor of 270GHz.Frequency input signal is 90GHz, and power is 20dBm; Output signal frequency is 270GHz, and power is-1.432dBm.
Fig. 9 is the quasi-optical odd frequency multiplier of setovering of a kind of Terahertz, comprising: capacitance 31, filter 32, frequency multiplication antenna 33, capacitance 34, choke induction 35 and quasi-optical device 36.
Figure 10 is the schematic diagram of the quasi-optical odd frequency multiplication of Terahertz antenna.As shown in figure 10, described frequency multiplication antenna 33 comprises antenna 331, the first Schottky diode 332, the second Schottky diode 333 and electric capacity 334; The negative electrode of described the first Schottky diode 332 links to each other with the anode of the second Schottky diode 333, and the negative electrode of the second Schottky diode 333 links to each other with the anode of the first Schottky diode 332 by electric capacity 334.
As shown in Figure 9, input signal, is loaded on the frequency multiplication antenna 33 behind capacitance 31, filter 32 by input 37 feed-ins; Be loaded into input signal on the frequency multiplication antenna 33 by the first Schottky diode 332 on the frequency multiplication antenna and the second Schottky diode 333 formed pipes to producing the odd harmonic component; Antenna 331 on the frequency multiplication antenna 33 radiate the harmonic component signal of required output.Direct current signal is loaded on the anode of the first Schottky diode through choke induction 35 by 38 feed-ins of DC feedback end; The minus earth of the second Schottky diode forms DC loop.Quasi-optical device 36 further improves the radiance of antenna, makes output signal have better directivity.Described frequency multiplication antenna 33 1 ends link to each other with filter 32, and the other end is by electric capacity 34 ground connection, thus realization radiofrequency signal loop.The antenna 331 of described frequency multiplication antenna 33 is flat plane antenna; The centre frequency of flat plane antenna equals output signal frequency.Described filter 32 can pass through input signal, suppresses the each harmonic component of input signal; Described filter 32 can be low pass filter, and its cut-off frequency is between the second harmonic frequency of frequency input signal and input signal.Described filter 32 also can be band pass filter, and its centre frequency equals frequency input signal, and rejection band is contained the frequencies of harmonic components of input signal.Described capacitance 31 and the 34 pairs of input signals and the loss of each harmonic component thereof are very little; Described choke induction 35 can suppress input signal and each harmonic component thereof.Described quasi-optical device 36 can be the high resistance medium lens, for example is quasi-optical device shown in Figure 2.The dielectric material of described high resistance medium lens is High Resistivity Si.Described quasi-optical device also can be the semi-open metallic cavity of trumpet type, for example is quasi-optical device as shown in Figure 3.
Figure 11 is the structural representation of a kind of implementation of the quasi-optical triductor of setovering of 270GHz.The 90GHz signal enters frequency multiplication antenna 304 by waveguide-fin-line transition structure 301 feed-ins through capacitance 302, filter 303.Electric capacity 302 is patch capacitor, appearance value 47uF; Filter 303 is height impedance type Microstrip Low-Pass, and cut-off frequency is 100GHz, and near the inhibition degree 180GHz, 270GHz is greater than 25dB.The antenna of frequency multiplication antenna 304 adopts the butterfly antenna form, and working frequency range is 260-280GHz; Nonlinear device is Schottky diode pair.One end of frequency multiplication antenna 304 links to each other with ground 305 by capacitance 311.Antenna, filter, transmission line all are produced on the quartz substrate.Quasi-optical device is the semi-open metallic cavity 310 of trumpet type, and the frequency multiplication antenna is positioned at the semi-open metallic cavity of trumpet type, and the bottom surface of loudspeaker is the short circuit metal face, and the short circuit identity distance of antenna distance loudspeaker cavity is from being 1/4th of the corresponding space wavelength of 270GHz.Input signal is by 309 inputs of waveguide mouth; Direct current biasing is by terminal 308 feed-ins.
Figure 12 is the output spectrum of the quasi-optical triductor of setovering of 270GHz.Frequency input signal is 90GHz, and power is 20dBm; Be biased to-5V; Output signal frequency is 270
GHz, power are 5.2dBm, than the high approximately 7dB of power output of the quasi-optical triductor of 270GHz shown in Figure 7.
Figure 13 is the structural representation according to the Terahertz Schottky diode of the embodiment of the invention.The frequency multiplication antenna adopts semiconductor technology to make.As shown in figure 13, the Terahertz Schottky diode is take Semi-insulating GaAs material (61) as substrate, on Semi-insulating GaAs material (61), be followed successively by from bottom to top: heavy doping n+GaAs layer (62), light dope n-GaAs layer (63), the concentration of heavy doping n+GaAs layer (62) is 10
18Cm
-3Magnitude, the concentration of light dope n-GaAs layer (63) is 10
16-10
17Cm
-3Magnitude, institute's doping is silicon.
The Terahertz Schottky diode comprises Schottky contacts anode 71, ohmic contact negative electrode 72, electroplate lead wire 73, raceway groove 74.Silicon dioxide layer 64 is formed on the light dope n-GaAs layer 63.Have aperture at silicon dioxide layer 64, Schottky contacts anode 71 is arranged in aperture, and Schottky contacts anode 71 contacts with light dope n-p type gallium arensidep layer 63 and forms schottky junction; Ohmic contact negative electrode 72 is formed on the heavy doping n+ p type gallium arensidep layer 62; Electroplate lead wire 73 is formed on silicon dioxide layer 64 and the Schottky contacts anode 71.Electroplate lead wire 73 links to each other with Schottky contacts anode 71.
The flat plane antenna of frequency multiplication antenna and described Schottky diode use same Semi-insulating GaAs material 61 to be substrate.
Above description to embodiments of the invention only is used for illustrating technical scheme of the present invention; rather than limitation of the scope of the invention; the present invention is not limited to disclosed these embodiment; those skilled in the art can make amendment to the technical scheme that aforementioned each embodiment puts down in writing; perhaps part technical characterictic wherein is equal to replacement, and these modifications or replace and all should fall into protection scope of the present invention.
Claims (20)
1. the quasi-optical frequency multiplier of Terahertz comprises the first capacitance, filter, frequency multiplication antenna and quasi-optical device; Described frequency multiplication antenna comprises antenna and nonlinear device; Input signal is loaded on the frequency multiplication antenna after through the first capacitance, filter, and input signal is by filter, and the filtered device of the each harmonic component of input signal suppresses; The nonlinear device of frequency multiplication antenna produces harmonic component to the input signal that is loaded on the frequency multiplication antenna; The antenna of frequency multiplication antenna radiate required output signal; Quasi-optical device makes output signal have better directivity.
2. the quasi-optical frequency multiplier of Terahertz according to claim 1, it is characterized in that: the quasi-optical frequency multiplier of described Terahertz also comprises choke induction; Direct current signal is carried on the frequency multiplication antenna through choke induction, and choke induction suppresses input signal and each harmonic component thereof.
3. the quasi-optical frequency multiplier of Terahertz according to claim 2, it is characterized in that: described nonlinear device is the Terahertz Schottky diode.
4. the quasi-optical frequency multiplier of Terahertz according to claim 2, it is characterized in that: described antenna is flat plane antenna, the centre frequency of flat plane antenna is output signal frequency.
5. the quasi-optical frequency multiplier of Terahertz according to claim 4, it is characterized in that: the frequency multiplication antenna adopts semiconductor technology to make, the nonlinear device of frequency multiplication antenna is the Terahertz Schottky diode, the Terahertz Schottky diode is take Semi-insulating GaAs material (61) as substrate, on Semi-insulating GaAs material (61), be followed successively by from bottom to top: heavy doping n+GaAs layer (62), light dope n-GaAs layer (63), the concentration of heavy doping n+GaAs layer (62) is 10
18Cm
-3Magnitude, the concentration of light dope n-GaAs layer (63) is 10
16-10
17Cm
-3Magnitude, institute's doping is silicon; The Terahertz Schottky diode comprises Schottky contacts anode (71), ohmic contact negative electrode (72), electroplate lead wire (73), raceway groove (74); Silicon dioxide layer (64) is formed on the light dope n-GaAs layer (63), have aperture at silicon dioxide layer (64), Schottky contacts anode (71) is arranged in aperture, and Schottky contacts anode (71) contacts with light dope n-p type gallium arensidep layer (63) and forms schottky junction; Ohmic contact negative electrode (72) is formed on the heavy doping n+ p type gallium arensidep layer (62); Electroplate lead wire (73) is formed on silicon dioxide layer (64) and the Schottky contacts anode (71);
Raceway groove (74) is formed in heavy doping n+GaAs layer (62), light dope n-GaAs layer (63) and the silicon dioxide layer (64), and heavy doping n+GaAs layer (62), light dope n-GaAs layer (63) and silicon dioxide layer (64) are removed in the raceway groove (74); Raceway groove (74) be shaped as anti-taper, the lower surface of raceway groove (74) contacts with Semi-insulating GaAs material (61), the upper surface of raceway groove (74) contacts with electroplate lead wire (73), the side of raceway groove (74) becomes predetermined angle to extend to upper surface from the lower surface of raceway groove (74) with respect to Semi-insulating GaAs material (61), and the upper surface of raceway groove (74) is greater than the lower surface of raceway groove (74);
The flat plane antenna of frequency multiplication antenna and described Schottky diode use same Semi-insulating GaAs material (61) to be substrate.
6. the quasi-optical frequency multiplier of Terahertz according to claim 2, it is characterized in that: described filter is low pass filter, and the cut-off frequency of low pass filter is between the second harmonic frequency of frequency input signal and input signal; Perhaps described filter is band pass filter, and the centre frequency of band pass filter equals the frequency of input signal, and rejection band is contained the frequencies of harmonic components of input signal.
7. the quasi-optical frequency multiplier of Terahertz according to claim 2, it is characterized in that: described the first capacitance is very little to input signal and the loss of each harmonic component thereof, and the first capacitance blocking-up direct current signal is carried on the frequency multiplication antenna direct current signal.
8. the quasi-optical frequency multiplier of Terahertz according to claim 2, it is characterized in that: described quasi-optical device is the high resistance medium lens, and the frequency multiplication antenna is positioned at the focal position of high resistance medium lens; Perhaps described quasi-optical device is the semi-open metallic cavity of trumpet type, and the frequency multiplication antenna is positioned at the semi-open metallic cavity of trumpet type, and the bottom surface of loudspeaker is metal.
9. the quasi-optical frequency multiplier of Terahertz according to claim 8, it is characterized in that: the dielectric material of described high resistance medium lens is High Resistivity Si, and the frequency multiplication antenna is close to the plane of high resistance medium lens.
10. according to claim 2-5,7 the quasi-optical frequency multiplier of the described Terahertz of arbitrary claim, it is characterized in that: the quasi-optical frequency multiplier of described Terahertz is quasi-optical No. four frequency multipliers of 200GHz, the 50GHz input signal is by K feed-in, through entering the frequency multiplication antenna behind the first capacitance, the filter; The first capacitance is patch capacitor, appearance value 47uF; Filter is height impedance type Microstrip Low-Pass, and cut-off frequency is 60GHz, and near the inhibition degree 110GHz, 220GHz is greater than 25dB; The frequency multiplication antenna is the monolithic frequency multiplication antenna chip of GaAs base, and antenna adopts the logarithm period form, and working frequency range is 180-220GHz; One end of frequency multiplication antenna is connected to the ground; Choke induction is chip inductor, and its sense value is 10uH; Described quasi-optical device is the High Resistivity Si extended hemispherical lens, and the frequency multiplication antenna is positioned at the focal position of lens, and the High Resistivity Si extended hemispherical lens is close to the frequency multiplication antenna back side.
11. the quasi-optical frequency multiplier of Terahertz according to claim 1, it is characterized in that: the quasi-optical frequency multiplier of described Terahertz is the quasi-optical odd frequency multiplier of Terahertz, described nonlinear device has symmetrical I-E characteristic and capacitance-voltage characteristics, nonlinear device is a pair of Terahertz Schottky diode, nonlinear device produces the odd harmonic component to the input signal that is loaded on the frequency multiplication antenna, described a pair of Terahertz Schottky diode comprises the first Schottky diode and the second Schottky diode, and the negative electrode of the first Schottky diode links to each other with the second Schottky diode anode; The anode of the first Schottky diode links to each other with the negative electrode of the second Schottky diode.
12. the quasi-optical frequency multiplier of Terahertz according to claim 11 is characterized in that: described antenna is flat plane antenna, and the centre frequency of flat plane antenna is output signal frequency.
13. the quasi-optical frequency multiplier of Terahertz according to claim 11 is characterized in that: described filter is low pass filter, and the cut-off frequency of low pass filter is between the second harmonic frequency of frequency input signal and input signal; Perhaps described filter is band pass filter, and the centre frequency of band pass filter equals the frequency of input signal, and rejection band is contained the frequencies of harmonic components of input signal.
14. the quasi-optical frequency multiplier of Terahertz according to claim 11 is characterized in that: described the first capacitance is very little to input signal and the loss of each harmonic component thereof, and the first capacitance blocking-up direct current signal is carried on the frequency multiplication antenna direct current signal.
15. the quasi-optical frequency multiplier of Terahertz according to claim 11 is characterized in that: described quasi-optical device is the high resistance medium lens, and the frequency multiplication antenna is positioned at the focal position of lens; Perhaps described quasi-optical device is the semi-open metallic cavity of trumpet type, and the frequency multiplication antenna is positioned at the semi-open metallic cavity of trumpet type, and the bottom surface of loudspeaker is metal.
16. the quasi-optical frequency multiplier of Terahertz according to claim 15 is characterized in that: the dielectric material of described high resistance medium lens is High Resistivity Si, and the frequency multiplication antenna is close to the plane of high resistance medium lens.
17. the quasi-optical frequency multiplier of Terahertz according to claim 12 is characterized in that:
The frequency multiplication antenna adopts semiconductor technology to make, each Terahertz Schottky diode of frequency multiplication antenna is take Semi-insulating GaAs material (61) as substrate, on Semi-insulating GaAs material (61), be followed successively by from bottom to top: heavy doping n+GaAs layer (62), light dope n-GaAs layer (63), the concentration of heavy doping n+GaAs layer (62) is 10
18Cm
-3Magnitude, the concentration of light dope n-GaAs layer (63) is 10
16-10
17Cm
-3Magnitude, institute's doping is silicon; The Terahertz Schottky diode comprises Schottky contacts anode (71), ohmic contact negative electrode (72), electroplate lead wire (73), raceway groove (74); Silicon dioxide layer (64) is formed on the light dope n-GaAs layer (63), have aperture at silicon dioxide layer (64), Schottky contacts anode (71) is arranged in aperture, and Schottky contacts anode (71) contacts with light dope n-p type gallium arensidep layer (63) and forms schottky junction; Ohmic contact negative electrode (72) is formed on the heavy doping n+ p type gallium arensidep layer (62); Electroplate lead wire (73) is formed on silicon dioxide layer (64) and the Schottky contacts anode (71);
Raceway groove (74) is formed in heavy doping n+GaAs layer (62), light dope n-GaAs layer (63) and the silicon dioxide layer (64), and heavy doping n+GaAs layer (62), light dope n-GaAs layer (63) and silicon dioxide layer (64) are removed in the raceway groove (74); Raceway groove (74) be shaped as anti-taper, the lower surface of raceway groove (74) contacts with Semi-insulating GaAs material (61), the upper surface of raceway groove (74) contacts with electroplate lead wire (73), the side of raceway groove (74) becomes predetermined angle to extend to upper surface from the lower surface of raceway groove (74) with respect to Semi-insulating GaAs material (61), and the upper surface of raceway groove (74) is greater than the lower surface of raceway groove (74);
The flat plane antenna of frequency multiplication antenna and described Schottky diode use same Semi-insulating GaAs material (61) to be substrate.
18. according to claim 11,12,14,17 the quasi-optical frequency multiplier of the described Terahertz of arbitrary claim, it is characterized in that: the quasi-optical frequency multiplier of described Terahertz is the quasi-optical triductor of 270GHz, the 90GHz input signal enters the frequency multiplication antenna by waveguide-fin-line transition structure feed-in through the first capacitance, filter; The first capacitance is patch capacitor, appearance value 47uF; Filter is height impedance type Microstrip Low-Pass, and cut-off frequency is 100GHz, and near the inhibition degree 180GHz, 270GHz is greater than 25dB; The antenna of frequency multiplication antenna adopts the butterfly antenna form, and working frequency range is 260-280GHz; One end of frequency multiplication antenna is connected to the ground; Antenna, filter, transmission line all are produced on the quartz substrate; Described quasi-optical device is the semi-open metallic cavity of trumpet type, and the frequency multiplication antenna is positioned at the semi-open metallic cavity of trumpet type, and the bottom surface of loudspeaker is metal, and the short circuit identity distance of antenna distance loudspeaker cavity is from being 1/4th of the corresponding space wavelength of 270GHz.
19. according to claim 2,4, the quasi-optical frequency multiplier of the described Terahertz of 5-9, it is characterized in that: the quasi-optical frequency multiplier of described Terahertz is the quasi-optical odd frequency multiplier of setovering of Terahertz, the quasi-optical frequency multiplier of described Terahertz also comprises the second capacitance, described frequency multiplication antenna also comprises electric capacity, described nonlinear device comprises the first Schottky diode and the second Schottky diode, the negative electrode of described the first Schottky diode links to each other with the anode of the second Schottky diode, the negative electrode of the second Schottky diode links to each other by the anode of electric capacity with the first Schottky diode, and nonlinear device produces the odd harmonic component to the input signal that is loaded on the frequency multiplication antenna; Direct current signal is loaded on the anode of the first Schottky diode through choke induction by the feed-in of DC feedback end; The minus earth of the second Schottky diode forms DC loop; One end of described frequency multiplication antenna links to each other with filter, and the other end is by capacity earth, thus realization radiofrequency signal loop.
20. according to claim 2,4,5, the quasi-optical frequency multiplier of 7 described Terahertzs, it is characterized in that: the quasi-optical frequency multiplier of described Terahertz is the quasi-optical triductor of setovering of 270GHz, the quasi-optical frequency multiplier of described Terahertz also comprises the second capacitance, described frequency multiplication antenna also comprises electric capacity, described nonlinear device comprises the first Schottky diode and the second Schottky diode, the negative electrode of the first Schottky diode links to each other with the anode of the second Schottky diode, the negative electrode of the second Schottky diode links to each other by the anode of electric capacity with the first Schottky diode, and nonlinear device produces the odd harmonic component to the input signal that is loaded on the frequency multiplication antenna; Direct current signal is loaded on the anode of the first Schottky diode through choke induction by the feed-in of DC feedback end; The minus earth of the second Schottky diode forms DC loop; One end of described frequency multiplication antenna links to each other with filter, and the other end is by the second capacitance ground connection, thus realization radiofrequency signal loop; The 90GHz signal enters the frequency multiplication antenna by waveguide-fin-line transition structure feed-in through the first capacitance, filter; The first capacitance is patch capacitor, appearance value 47uF; Filter is height impedance type Microstrip Low-Pass, and cut-off frequency is 100GHz, and near the inhibition degree 180GHz, 270GHz is greater than 25dB; The antenna of frequency multiplication antenna adopts the butterfly antenna form, and working frequency range is 260-280GHz; Described antenna, filter, transmission line all are produced on the quartz substrate; Quasi-optical device is the semi-open metallic cavity of trumpet type, and the bottom surface of loudspeaker is metal, and the short circuit identity distance of antenna distance loudspeaker cavity is from being 1/4th of the corresponding space wavelength of 270GHz.
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| CN107367247A (en) * | 2017-06-09 | 2017-11-21 | 北京工业大学 | A kind of frequency multiplier type micro-strip paster antenna strain transducer |
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