CN112886930A - Millimeter wave/terahertz frequency doubling circuit - Google Patents
Millimeter wave/terahertz frequency doubling circuit Download PDFInfo
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- CN112886930A CN112886930A CN202110041755.6A CN202110041755A CN112886930A CN 112886930 A CN112886930 A CN 112886930A CN 202110041755 A CN202110041755 A CN 202110041755A CN 112886930 A CN112886930 A CN 112886930A
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- H—ELECTRICITY
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- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
- H03B19/06—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes
- H03B19/14—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes by means of a semiconductor device
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Abstract
本发明涉及一种基于肖特基二极管的毫米波/太赫兹倍频电路，包括：输入波导、输入滤波型天线、肖特基二极管、输出匹配电路、输出天线和输出波导。创新性提出波导‑两层介质基板‑波导的背靠背结构，基于肖特基二极管的非线性特性实现高效率倍频功能。输入滤波型天线实现输入信号从波导到微带的过渡，同时实现对高次谐波的抑制；输出天线实现了输出信号从微带到波导的过渡，同时输出波导的高通特性实现了谐波信号的提取；本发明具有成本低，结构小型化，倍频损耗小，倍频效率高等优点，适用于毫米波/太赫兹电子系统。
The invention relates to a millimeter wave/terahertz frequency multiplication circuit based on a Schottky diode, comprising: an input waveguide, an input filtering antenna, a Schottky diode, an output matching circuit, an output antenna and an output waveguide. The back-to-back structure of the waveguide-two-layer dielectric substrate-waveguide is innovatively proposed, and the high-efficiency frequency doubling function is realized based on the nonlinear characteristics of Schottky diodes. The input filter antenna realizes the transition of the input signal from the waveguide to the microstrip, and at the same time realizes the suppression of high-order harmonics; the output antenna realizes the transition of the output signal from the microwave to the waveguide, and the high-pass characteristic of the output waveguide realizes the harmonic signal. The invention has the advantages of low cost, miniaturized structure, low frequency doubling loss and high frequency doubling efficiency, and is suitable for millimeter wave/terahertz electronic systems.
Description
Technical Field
The invention relates to a frequency doubling circuit of a millimeter wave/terahertz frequency band.
Background
Millimeter wave/terahertz is an electromagnetic wave with a frequency range of more than 30GHz, has the properties of both microwave and light wave, is a transition from electronics to an optical region, and is a transition from macroscopical to microcosmic theory, and has many characteristics due to the special frequency band of terahertz: such as short wavelength, wide frequency band, high information capacity, good space and time coherence and strong anti-interference capability. The characteristics enable the terahertz waves to have great research value. In recent years, the millimeter wave/terahertz frequency band is one of the main frequency bands for domestic and foreign communication development, and has a huge application prospect in various fields such as wireless communication, astronomy, radar remote sensing detection, safety detection, national defense and military affairs.
In the research field of millimeter wave/terahertz technology, the generation of a source is a first problem to be solved urgently. The technical indexes of the millimeter wave/terahertz source determine the overall performance of the millimeter wave/terahertz system to a great extent. At present, millimeter wave/terahertz sources are mainly obtained in two ways, namely millimeter wave/terahertz sources based on optics and millimeter wave/terahertz sources based on electronics. The optical millimeter wave/terahertz source mainly comprises a photoconductive antenna and a parametric oscillator, and the electronic millimeter wave/terahertz source mainly comprises a quantum cascade laser, an oscillator, a solid-state frequency multiplier and the like. Compared with frequency sources obtained by other technologies, the millimeter wave/terahertz frequency doubling source obtained based on the solid-state hybrid integrated circuit has the advantages of small volume, low cost, high frequency spectrum quality, high frequency stability and the like. With the rapid development of communication systems, the demand for miniaturized high-efficiency millimeter wave/terahertz sources is increasing day by day. However, the traditional waveguide millimeter wave/terahertz frequency multiplier adopts a waveguide-dielectric substrate-waveguide cascade connection mode, has relatively large size, high cost and complex assembly, and cannot meet the requirements of miniaturization and integration of a millimeter wave/terahertz system. Therefore, the structure defects of the traditional millimeter wave/terahertz waveguide frequency multiplier are overcome, the frequency multiplier circuit with a more miniaturized structure and lower cost is designed, and the design method has very important significance for the development of modern millimeter wave/terahertz electronic systems.
Disclosure of Invention
The invention aims to provide a novel frequency doubling circuit of a millimeter wave/terahertz frequency band, which has the advantages of compact structure, low cost, small frequency doubling loss, high frequency doubling efficiency and the like and is suitable for a millimeter wave/terahertz electronic system.
In order to achieve the purpose, the invention provides a millimeter wave/terahertz frequency doubling circuit based on a Schottky diode. The specific technical scheme is as follows:
a millimeter wave/terahertz frequency doubling circuit mainly comprises: the antenna comprises an input waveguide, an input filter type antenna, a Schottky diode, an output matching circuit, an output antenna and an output waveguide. The millimeter wave/terahertz frequency doubling circuit is characterized in that a waveguide-two-layer dielectric substrate-waveguide back-to-back structure is adopted; the input filter type antenna is arranged on the first layer of dielectric substrate and is placed in the aperture of the input waveguide; the Schottky diode, the output matching circuit and the output antenna are arranged on the second layer of dielectric substrate and are arranged in the caliber of the output waveguide; the input filter type antenna is of a feedback structure and is connected with the diode on the second layer of dielectric substrate through the metalized through hole; the schottky diode is connected to the output antenna through an impedance matching circuit.
The working principle of the millimeter wave/terahertz frequency doubling circuit provided by the invention is as follows: radio frequency signals are fed from the input waveguide and are transited into the diode of the second dielectric substrate through the filter type antenna, and due to the nonlinear characteristic of the diode, higher harmonics can be generated. The suppression of the second harmonic and the third harmonic (higher harmonic signals are small and can be ignored) by the input antenna is realized by the technology of slotting the surface of the input antenna, fundamental wave signals and generated higher harmonic signals are radiated into an output waveguide through the output antenna, and the output waveguide is equivalent to a high-pass filter, so that required harmonic signals are extracted and output from the output waveguide. The technology of slotting the surface of the input antenna changes the impedance of the input antenna at the same time, thereby realizing the input impedance matching of the antenna and the diode and ensuring that the input fundamental wave signal is loaded on the diode with the maximum efficiency; the output matching circuit realizes the output impedance matching of the diode and the output antenna and ensures the maximum power transmission of the required harmonic signals.
The millimeter wave/terahertz frequency doubling circuit provided by the invention generates a harmonic signal through the nonlinear characteristic of the Schottky diode, and performs power frequency doubling. Other harmonic signals are suppressed through the filtering type antenna, and required harmonic signals are extracted through the output waveguide with the high-pass characteristic, so that the power frequency doubling efficiency is improved. Aiming at the defects of complex structure and high cost of the traditional waveguide frequency doubling circuit, the waveguide-double-layer substrate-waveguide back-to-back structure is adopted, so that the waveguide-double-layer substrate-waveguide frequency doubling circuit has the characteristics of simple structure, low cost, small frequency doubling loss, high frequency doubling efficiency and circuit miniaturization, and has very wide application prospect in a millimeter wave/terahertz electronic system.
Drawings
FIG. 1 is a millimeter wave/terahertz frequency doubling circuit proposed by the present invention;
FIG. 2 is a diagram showing the suppression of higher harmonics by a filter type antenna in a third order frequency multiplier circuit;
FIG. 3 is the tripled output power of the triple power doubling circuit;
FIG. 4 is the tripled output efficiency of the tripled frequency doubling circuit;
in the drawings, the reference numbers correspond to the names:
(1) the antenna comprises an input waveguide, (2) a first dielectric substrate, (3) an input filtering antenna, (4) an intermediate grounding metal layer, (5) a second dielectric substrate, (6) a Schottky barrier diode, (7) an output matching circuit, (8) an output antenna, and (9) an output waveguide.
Detailed Description
The advantages of the invention will be illustrated by way of example below.
The millimeter wave/terahertz frequency doubling circuit structure of the present embodiment is shown in fig. 1, an input signal with a center frequency of 28GHz and an input bandwidth of 2GHz is fed from an input waveguide, and is transited to a second-layer dielectric substrate through an input filter-type antenna signal; the input signal is loaded on the Schottky barrier diode to generate higher harmonics, the filtering type antenna can well inhibit signals in frequency bands of double frequency and triple frequency through the input signal (27-29GHz), the output antenna is connected with the output waveguide and is equivalent to a high-pass filter, and the required harmonic signal (81-87GHz) can be extracted to realize the frequency doubling function.
Fig. 2 is a suppression curve of the filter type antenna for higher harmonics in the millimeter wave/terahertz frequency doubling circuit according to the present embodiment. As can be seen from fig. 2(a), the frequency range of the 20-dB return loss of the input antenna is 27-29GHz, and this frequency range is the frequency range of the input substrate signal. As can be seen from fig. 2(b), the insertion loss of the input antenna is greater than 20dB in the second harmonic frequency band of the fundamental wave, i.e., in the frequency range of 54-58GHz, and good suppression of the second harmonic frequency band is achieved. As can be seen from fig. 2(c), the insertion loss of the input antenna is greater than 20dB in the frequency range of 81-87GHz, which is the frequency triple of the fundamental wave, and good suppression of the frequency triple is achieved.
Fig. 3 is a curve of the tripled output power of the present embodiment, when the input frequency range is 27-29GHz and the input power is 20dBm, the output power is greater than 7dBm in the tripled output frequency range, i.e. 81-87GHz, and the output power is maximum 14.8dBm in the output frequency range of 83.6 GHz.
Fig. 4 is a graph of the triple frequency output efficiency of the present embodiment, when the input frequency range is 27-29GHz and the input power is 20dBm, the output efficiency is greater than 5% in the triple frequency output frequency range, i.e. 81-87GHz range, and the output frequency is 83.6GHz, the maximum output efficiency is 30%.
Claims (4)
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113394574A (en) * | 2021-06-17 | 2021-09-14 | 网络通信与安全紫金山实验室 | Terahertz oscillator integrated with differential antenna and field path fusion method thereof |
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| CN107799888A (en) * | 2017-09-11 | 2018-03-13 | 南京邮电大学 | A kind of double frequency high-gain paster antenna |
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| CN110505019A (en) * | 2019-07-17 | 2019-11-26 | 电子科技大学 | A multifunctional chip based on on-chip terahertz frequency multiplication modulation |
| CN110855245A (en) * | 2019-11-13 | 2020-02-28 | 电子科技大学 | Millimeter wave/terahertz power frequency doubling circuit |
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2021
- 2021-01-13 CN CN202110041755.6A patent/CN112886930A/en active Pending
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| US20130229210A1 (en) * | 2011-08-25 | 2013-09-05 | California Institute Of Technology | On-chip power-combining for high-power schottky diode based frequency multipliers |
| CN102904528A (en) * | 2012-10-11 | 2013-01-30 | 胡延安 | Terahertz quasi-optical frequency multiplier |
| US20170288607A1 (en) * | 2014-08-29 | 2017-10-05 | University Of Virginia | Balanced unilateral frequency quadrupler |
| CN207218641U (en) * | 2017-06-01 | 2018-04-10 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Terahertz odd solid-state frequency multiplier |
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| CN113394574A (en) * | 2021-06-17 | 2021-09-14 | 网络通信与安全紫金山实验室 | Terahertz oscillator integrated with differential antenna and field path fusion method thereof |
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