CN102983388A - Terahertz frequency mixing antenna and quasi-optical frequency mixing module - Google Patents
Terahertz frequency mixing antenna and quasi-optical frequency mixing module Download PDFInfo
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- CN102983388A CN102983388A CN2012103828946A CN201210382894A CN102983388A CN 102983388 A CN102983388 A CN 102983388A CN 2012103828946 A CN2012103828946 A CN 2012103828946A CN 201210382894 A CN201210382894 A CN 201210382894A CN 102983388 A CN102983388 A CN 102983388A
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Abstract
The invention provides a terahertz frequency mixing antenna and a quasi-optical frequency mixing module. The terahertz frequency mixing antenna comprises a first schottky diode, a second schottky diode, a planar antenna and a blocking condenser, wherein a negative pole of the first schottky diode is connected with a positive pole of the second schottky diode through the blocking condenser, and a positive pole of the first schottky diode is connected with a negative pole of the second schottky diode directly or through a resistance. The schottky diodes are arranged on radio frequency feed ports of the planar antenna, a radio frequency signal and a local oscillating signal are fed in a space coupling mode through the planar antenna, and an intermediate frequency signal is output after the frequency mixing of the schottky diodes and is output in a guided current mode from the outermost side of the planar antenna. The quasi-optical frequency mixing module comprises the terahertz frequency mixing antenna, a bias and intermediate frequency circuit and a planar transmission line. The terahertz frequency mixing antenna and the quasi-optical frequency mixing module are capable of being operated in a sub-harmonic frequency mixing mode or a fundamental wave frequency mixing mode, and being connected with a standard circuit port easily. Due to the fact that direct current bias is loaded on the frequency mixing antenna, requirements of local oscillating power is reduced.
Description
Technical field
This area relates to THz wave Detection Techniques field, particularly relates to a kind of Terahertz mixing antenna and quasi-optical frequency mixing module.
Background technology
Terahertz is final stage exploited electromagnetic spectrum.The special performance of terahertz emission is so that THz imaging technology becomes one of current study hotspot.Terahertz detector is one of critical component of terahertz imaging, and its core is Terahertz antenna and frequency mixer.In order to realize the miniaturization of detector, antenna and frequency mixer can be integrated, namely the mixing antenna is also referred to as Terahertz mixing antenna.
Terahertz mixing antenna is a kind of device that antenna-coupled and frequency translation are combined, and has following characteristics: be easy to processing and realize, and in case of necessity can be by machining accuracy very high semiconductor technology and optical technology; Compact conformation, volume is little, quality is light; When a large amount of production, cost is lower than the waveguide-based device; Because the method that has adopted antenna to combine with nonlinear device at the input radio frequency place, thereby avoided transmission line loss; Planar structure is easy to the integrated two-dimensional array that is easy to form, the unit high conformity; Than the frequency mixer of open architecture, good stability; Bandwidth, the frequency band of waveguide-based device mainly is subject to the operating frequency of dominant waveguide mode.
Just because of having above advantage, Terahertz mixing antenna is widely used in the fields such as imaging, radio astronomy, communication.Especially in the focal plane imaging field, Terahertz mixing antenna is a kind of low cost, small size, is easy to form the scheme of array, therefore is with a wide range of applications, and is that of THz wave sniffer aspect effectively selects.
Since Terahertz be still a technology still jejune field, especially THz source be difficult for obtaining, therefore, adopting subharmonic mixing form is to realize the relevant effective way that detects of terahertz signal.That is, radio frequency signal frequency f
RF, the local oscillation signal frequency f
LOAnd intermediate-freuqncy signal frequency f
IFSatisfy following relation:
2nf
LO± f
IF=f
RFN is integer
Owing to the demand that can reduce diode loading biasing local oscillation power.So, usually all can the direct current biasing port be set to the mixing chip.But because the diode pair in the subharmonic mixing antenna is oppositely to link to each other, therefore can't carry out while feed biasing to diode.
The Terahertz mixing antenna that adopts semiconductor technology to realize can have more compact structure, thereby can satisfy the requirement of structuring the formation of multiple-beam system or phased array system.In order to guarantee antenna performance, can realize the biasing of antiparallel diode pair, reasonably chip structure seems particularly important.
If directly to Terahertz mixing antenna, especially subharmonic mixing antenna loading direct current biasing and draw direct current signal, can cause the short circuit of intermediate-freuqncy signal or certain diode, also or can cause the short circuit of dc bias current, thereby make the mixing antenna failure.For Terahertz mixing antenna, antiparallel diode pair is adopted in the subharmonic mixing, and fundamental wave mixing adopts single diode; Traditional subharmonic mixing antenna can't be realized fundamental wave mixing, because the odd harmonic component is suppressed in the diode pair.Also both the subharmonic mixed-mode can be do not worked at present, the relevant report of the mixing antenna of fundamental wave mixing pattern can be operated in again.This has greatly retrained the range of application of subharmonic mixing antenna.
Because the radiofrequency signal of Terahertz mixing antenna and local oscillation signal by antenna-coupled, therefore, need a kind of antenna, the radio frequency band signal that can either be coupled, the local oscillator frequency band signals can be coupled again.For fundamental wave mixing, because radiofrequency signal and local oscillation signal frequency approach, therefore, antenna is easy to design and realizes; But, for the subharmonic mixing and since local oscillation signal be radiofrequency signal half or lower, therefore, antenna generally adopts all channel antenna.Because all channel antenna can the radiated radio frequency (RF) frequency range, the local oscillator frequency range, and the signal of frequency range between the two, therefore, if the harmonic component that produces falls near the radio frequency band, near the local oscillator frequency range or between the two, then secondary radiation can occur, thereby caused the loss of a part of radio-frequency (RF) energy.
Summary of the invention
The present invention proposes in view of the above problems, its objective is to propose a kind of Terahertz mixing antenna, both can realize the subharmonic mixing, can realize fundamental wave mixing again; Two Schottky diodes of a pair of reverse Schottky diode are wherein setovered simultaneously, thereby reduce the demand to local oscillation power.
Another object of the present invention is to propose a kind of mixing antenna chip structure, and is simple in structure, and can realize the biasing of a pair of antiparallel Schottky diode, do not affect again the performance of flat plane antenna.
Another object of the present invention is to propose a kind of flat plane antenna (being on-chip antenna) structure, can realize the Space Coupling of radiofrequency signal and local oscillation signal, makes simultaneously the mixing of each harmonic sustainable participation, improves mixing efficiency.
Another object of the present invention is to propose a kind of intermediate frequency and biasing circuit, can realize the extraction to the intermediate frequency equilib-ria formula signal of the biasing of Terahertz mixing antenna and mixing chip, equalize instructing signal is transformed into unbalanced signal, and amplifies, made things convenient for and being connected of subsequent conditioning circuit; In addition, the mode of operation of control Terahertz mixing antenna can be switched in subharmonic mixed-mode and fundamental wave mixing pattern.
According to a first aspect of the invention, provide a kind of Terahertz mixing antenna, comprised flat plane antenna, a pair of Schottky diode), the first capacitance; Described a pair of Schottky diode comprises the first Schottky diode and the second Schottky diode, the first Schottky diode and the second Schottky diode be two independently, diode that performance is identical, the negative electrode of the first Schottky diode links to each other by the first capacitance with the anode of the second Schottky diode, and the anode of the first Schottky diode directly links to each other with the negative electrode of the second Schottky diode or links to each other by resistance; Described a pair of Schottky diode is positioned at the radio-frequency feed port of flat plane antenna; Radiofrequency signal and local oscillation signal are spacing wave, radiofrequency signal by flat plane antenna by the Space Coupling feed-in, local oscillation signal by flat plane antenna by the Space Coupling feed-in, after the radiofrequency signal and a pair of Schottky diode mixing of local oscillation signal process by feed-in that flat plane antenna is coupled, the output intermediate-freuqncy signal, intermediate-freuqncy signal is exported with the leading current forms by the flat plane antenna outermost.
When applying direct current biasing simultaneously for the first Schottky diode and the second Schottky diode, described mixing antenna works in the subharmonic mixed-mode, radio frequency signal frequency is the even-multiple of local oscillation signal frequency, and described mixing antenna only can be exported the even harmonics component; Described mixing antenna works in the fundamental wave mixing pattern when applying direct current biasing for one of the first Schottky diode and second Schottky diode, and radio frequency signal frequency and local oscillation signal frequency are basically identical.
Described flat plane antenna is at least functioning in two frequency ranges, and these two frequency ranges have the octave relation; Perhaps these two frequency ranges have broadband character, and bandwidth can cover several octaves.Flat plane antenna adopts broad-band antenna, and broad-band antenna is butterfly antenna, logarithm periodic antenna or helical antenna.The signal spectrum component of described mixing antenna output is: | mf
RF± nf
LO|, wherein m ± n is odd number, f
RF, f
LOAnd f
IFSatisfy 2nf
LO± f
IF=f
RF, n is integer, f
IFThe intermediate-freuqncy signal frequency, f
LOThe local oscillation signal frequency, f
RFIt is radio frequency signal frequency.
Described mixing antenna adopts semiconductor technology to make, and the chip of described mixing antenna is take the Semi-insulating GaAs layer as substrate, forms heavy doping n+ p type gallium arensidep layer at the Semi-insulating GaAs layer, forms light dope n-p type gallium arensidep layer at heavy doping n+ p type gallium arensidep layer; Silicon dioxide layer is formed on the light dope n-p type gallium arensidep layer, and the concentration of heavy doping n+GaAs layer 42 is 10
18Cm
-3Magnitude, the concentration of light dope n-GaAs layer is 10
16-10
17Cm
-3Magnitude; Institute's doping is silicon; Described a pair of Schottky diode is a pair of Schottky diode parallel and reverse on the space, the upper plane of the first Schottky diode and the upper plane of the second Schottky diode are at same plane, and the lower plane of the lower plane of the first Schottky diode and the second Schottky diode is at same plane.
The first Schottky diode comprises that the first Schottky contacts anode, the first ohmic contact negative electrode, the first electroplate lead wire, the first Schottky anode extend pressure point, have aperture at silicon dioxide layer, the first Schottky contacts anode is arranged in aperture, and the first Schottky contacts anode contacts with light dope n-p type gallium arensidep layer and forms schottky junction; The first ohmic contact negative electrode is formed on the heavy doping n+ p type gallium arensidep layer; The first electroplate lead wire is formed on silicon dioxide layer and the first Schottky contacts anode; The first Schottky anode extends pressure point and is formed on the silicon dioxide layer; The first Schottky contacts anode extends pressure point and links to each other with the first Schottky contacts anode by the first electroplate lead wire.
The second Schottky diode comprises that the second Schottky contacts anode, the second ohmic contact negative electrode, the second electroplate lead wire, the second Schottky anode extend pressure point, have aperture at silicon dioxide layer, the second Schottky contacts anode is arranged in aperture, and the second Schottky contacts anode contacts with light dope n-p type gallium arensidep layer and forms schottky junction; The second ohmic contact negative electrode is formed on the heavy doping n+ p type gallium arensidep layer; The second electroplate lead wire is formed on silicon dioxide layer and the second Schottky contacts anode; The second Schottky anode extends pressure point and is formed on silicon dioxide layer and the metal; The second Schottky contacts anode extends pressure point and links to each other with the second Schottky contacts anode by the second electroplate lead wire.
The anode of the first Schottky diode extends pressure point as the top electrode of the first capacitance, the ohmic contact negative electrode of the second Schottky diode is as the bottom electrode of the first capacitance, extend silicon dioxide layer between pressure point and the second ohmic contact negative electrode as the dielectric of the first capacitance at the anode of the first Schottky diode, thereby the first capacitance between the second ohmic contact negative electrode of the first Schottky contacts anode of realizing the first Schottky diode and the second Schottky diode is connected.
The second Schottky anode of the second Schottky diode extends pressure point and links to each other with the first ohmic contact negative electrode of the first Schottky diode by metal, thereby realizes the first ohmic contact negative electrode of the first Schottky diode and the second Schottky contacts anode of the second Schottky diode.
The figure of flat plane antenna is formed by the metal of high conductivity, flat plane antenna comprises the two poles of the earth figure, the second antenna metal of the first antenna metal of one utmost point of flat plane antenna and another utmost point of flat plane antenna all is positioned on the Semi-insulating GaAs layer, and the first antenna metal directly links to each other with the second ohmic contact negative electrode of the second Schottky diode; The second antenna metal directly links to each other with the first ohmic contact negative electrode of the first Schottky diode.
Between two Schottky contacts anodes, there is the corrosion raceway groove, realizes two schottky junction electric current isolation; The degree of depth of described raceway groove is not less than the thickness sum of n+ p type gallium arensidep, n-p type gallium arensidep and silicon dioxide.
Channel shape is anti-taper, the lower surface of raceway groove contacts with the Semi-insulating GaAs layer, the upper surface of raceway groove contacts with described electroplate lead wire, the side of raceway groove becomes predetermined angle to extend to upper surface from the lower surface of raceway groove with respect to the Semi-insulating GaAs layer, the upper surface of raceway groove is greater than the lower surface of raceway groove, and raceway groove extends between pressure point and the described Schottky contacts anode and do not contact with described Schottky contacts anode with described Schottky contacts anode extension pressure point at described Schottky contacts anode in the part of silicon dioxide layer.
The very direct current biasing feedback point that powers on of the first capacitance; The bottom electrode of the first capacitance is that intermediate-freuqncy signal feeds out a little.
Flat plane antenna has balance type structure, and the two poles of the earth figure of flat plane antenna take at the center as the mirror image symmetry; Flat plane antenna therefrom mind-set is divided into three parts outward, is followed successively by: the effective radiation area of radio frequency, the effective radiation area of local oscillator, intermediate frequency draw-out area; The polarization of the effective radiation area of radio frequency can be circular polarization or linear polarization; The polarization of the effective radiation area of local oscillator is linear polarization, and the length of intermediate frequency draw-out area is much smaller than the wavelength of intermediate-freuqncy signal; The intermediate frequency draw-out area also comprises pressure welding point.
The figure of flat plane antenna is formed by the metal of high conductivity, is produced on the semi-insulating GaAs substrate by semiconductor technology, and the thickness that forms the metal of flat plane antenna figure is not less than the skin depth of local oscillation signal frequency.
Selectively, the effective radiation area of the radio frequency of described mixing antenna is helical antenna or butterfly antenna, and the intermediate frequency draw-out area only is comprised of pressure welding point, and pressure welding point is of a size of the square of 200um * 200um.
Selectively, the described mixing antenna subharmonic mixing antenna that is 220GHz; The effective radiation area of radio frequency adopts the logarithm periodic antenna form of linear polarization, and working frequency range is 200-240GHz, and the dimensional parameters of the logarithm periodic antenna of linear polarization is: external diameter=130um, the number of teeth=3, boss ratio=1.8; The effective radiation area of local oscillator adopts the dipole antenna form, and operating frequency is 109GHz, and the dimensional parameters of dipole antenna is: path length=260um, subtended angle=90 °; The intermediate frequency draw-out area only is comprised of pressure welding point, and pressure welding point is of a size of the square of 200um * 200um.
According to a second aspect of the invention, provide a kind of quasi-optical mixing rate module, comprised biasing and intermediate-frequency circuit, planar transmission line and mixing antenna noted earlier; Biasing comprises the first choke induction, the second choke induction, the second capacitance, the 3rd capacitance, Ba Lun and low noise amplifier with intermediate-frequency circuit; The first choke induction provides direct current biasing for described mixing antenna, and an end of the first choke induction is connected with direct voltage Vcc, and the other end of the first choke induction links to each other with the second Schottky diode anode of described mixing antenna; One end ground connection of the second choke induction, the other end links to each other by the negative electrode of planar transmission line with the first Schottky diode of described mixing antenna, for the direct current biasing of described mixing antenna provides DC loop, the first choke induction and the second choke induction are to the direct current signal conducting and control intermediate-freuqncy signal and the signal higher than the frequency of intermediate-freuqncy signal; The middle frequency difference sub-signal of described mixing antenna output is respectively via the second capacitance and the 3rd capacitance balance end to Ba Lun, after the conversion through the balanced-unbalanced of Ba Lun, exports after being amplified by low noise amplifier again; Described mixing antenna works in the subharmonic mixed-mode.
Described quasi-optical mixing rate module can also comprise the 3rd choke induction and single-pole single-throw switch (SPST); One end ground connection of the 3rd choke induction, the other end links to each other with an end of single-pole single-throw switch (SPST), single-pole single-throw switch (SPST) links to each other by the anode of planar transmission line with the first Schottky diode of described mixing antenna, and described the 3rd choke induction is to the direct current signal conducting and control intermediate-freuqncy signal and the signal higher than the frequency of intermediate-freuqncy signal; When single-pole single-throw switch (SPST) is closed, dc bias current will be through the first choke induction, the second Schottky diode, single-pole single-throw switch (SPST), the second choke induction, the second Schottky diode work, and the two ends of the first Schottky diode all are DC earthing, thereby the first Schottky diode is not worked, and described mixing antenna works in the fundamental wave mixing pattern; When single-pole single-throw switch (SPST) disconnects, apply simultaneously direct current biasing for the first Schottky diode and the second Schottky diode, described mixing antenna works in the subharmonic mixed-mode.
In addition, described mixing antenna output end is axisymmetric with respect to described mixing antenna to two sections circuit of Ba Lun balance end, guarantees the degree of balance of balanced signal.
The present invention has following technological merit and beneficial effect: under the prerequisite of the radiance that does not affect Terahertz mixing antenna, can load direct current biasing to subharmonic mixing chip, reduce the demand to local oscillation power, and simple in structure being easy to realized; Utilize biasing and intermediate frequency network effectively to extract the intermediate frequency equilib-ria formula signal of mixing chip, and the signal on the mixing chip is transformed into uneven formula signal, made things convenient for and being connected of preferred circuit interface, and can control subharmonic mixing antenna and be operated in fundamental wave mixing pattern or subharmonic mixed-mode.
Description of drawings
It should be noted that the accompanying drawing in the following describes only schematically shows some embodiment, does not comprise all possible embodiment.
Accompanying drawing 2a is under the subharmonic mode of operation, and conversion loss is with the variation diagram of local oscillation power;
Accompanying drawing 2b is under the subharmonic mode of operation, and conversion loss is with the variation diagram of bias voltage;
Accompanying drawing 3a is the partial schematic diagram of Terahertz mixing antenna chip structure;
Accompanying drawing 3b is the partial schematic diagram of Terahertz mixing antenna chip structure;
Accompanying drawing 4 is structural representations of quasi-optical mixing rate module proposed by the invention;
Accompanying drawing 5 is plane antenna structure schematic diagrames proposed by the invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, the technical scheme of exemplary embodiment of the present invention is described below in conjunction with accompanying drawing.Obviously, described embodiment is a part of embodiment of the present invention, rather than whole embodiment.Described embodiment only is used for illustrating, rather than limitation of the scope of the invention.Based on embodiments of the invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that obtains under the creative work prerequisite.
Although used first, second grade of word to describe a plurality of elements or component part among the application, these elements or component part should not be subjected to the restriction of these words.An element or component part and another element or component part only be used for to be distinguished in these words, and do not comprise " sequentially ".Therefore, with the first element discussed below or component part is called the second element or component part does not exceed the spirit and scope of the present invention yet.
Fig. 1 has provided the structural representation of Terahertz mixing antenna embodiment of the present invention.As shown in Figure 1, Terahertz mixing antenna comprises flat plane antenna 104, a pair of Schottky diode 105, capacitance 108 and low resistance 109.Described a pair of Schottky diode 105 is a pair of Schottky diodes 105 parallel and reverse on the space.Radiofrequency signal 101 is spacing wave with local oscillation signal 102, can by flat plane antenna 104 couplings, be transformed into plane leading current forms from the space free forms of radiation.The radiofrequency signal of getting off of being coupled and local oscillation signal through after a pair of antiparallel Schottky diode 105 mixing, output intermediate-freuqncy signal 1031,1032.A pair of antiparallel Schottky diode 105 is comprised of the first Schottky diode 106 and the second Schottky diode 107.The first Schottky diode 106 has identical electrical property with the second Schottky diode 107; And the negative electrode of the first Schottky diode 106 links to each other by a capacitance 108 with the anode of the second Schottky diode 107, and the anode of the first Schottky diode 106 directly links to each other with the negative electrode of Schottky diode 107 or links to each other by a resistance 109.Capacitance 108 is with respect to radio frequency signal frequency f
RF, the local oscillation signal frequency f
LOAnd intermediate-freuqncy signal frequency f
IFPresent low impedance characteristic, almost can pass through radio frequency signal frequency f losslessly
RF, the local oscillation signal frequency f
LOAnd intermediate-freuqncy signal frequency f
IFBut capacitance 108 has buffer action for direct current signal.Resistance 109 has extremely low resistance value, and magnitude is 10
-3Below the Ω, almost radiofrequency signal, local oscillation signal, intermediate-freuqncy signal and direct current signal there is not loss.The signal spectrum component of described mixing antenna output is: | mf
RF± nf
LO|, wherein m ± n is odd number.f
RF, f
LOAnd f
IFSatisfy 2nf
LO± f
IF=f
RF(n is integer).
Accompanying drawing 2a is under the subharmonic mode of operation, and conversion loss is with the variation diagram of local oscillation power, and accompanying drawing 2b is under the subharmonic mode of operation, and conversion loss is with the variation diagram of bias voltage.f
RF＝220GHz，f
LO＝109GHz，f
IF＝2GHz。The performance of Schottky diode 106 and Schottky diode 107 is: cascade resistance R s=4Ohm, and ideal factor n=1.2, junction capacitance Cj0 are 5.8fF, reverse breakdown voltage is 5V.Fig. 2 (a) is the variation diagram of conversion loss with local oscillation power; When local oscillation power is 11.5dBm, can obtain optimum conversion loss 9.54dB, shown in m1 among Fig. 2 (a).If local oscillation power is less than 11.5dBm, especially less than 7dBm, conversion loss will worsen.
In some cases, because the local oscillation power space loss, perhaps application conditions can't provide enough local oscillation power, therefore, and the conversion loss meeting variation of Terahertz mixing antenna.In the Terahertz receiver, because available Terahertz low noise amplifier also is not very ripe, therefore, the mixing device is directly as the first order of receiver usually.According to the cascade system expressions of noise:
System noise depends on noise and the gain of the first order.Therefore as the first order, the noise of Terahertz mixing antenna and conversion loss (inverse of conversion gain) just seem very important.Can be found out that by Fig. 2 (a) when local oscillation power was 0dBm, the conversion loss meeting deteriorated to about 72dB, deterioration degree is 10
6Magnitude.In order to reduce conversion loss, can load direct current biasing to diode.When Fig. 2 (b) had provided antiparallel diode pair loading forward bias, conversion loss was along with the variation diagram of each diode bias voltage.Can find out, when bias voltage is 1.3V, namely each diode be biased to 0.65V the time, can obtain minimum conversion loss, be 13.8dBm, shown in m2 among Fig. 2 (b), with respect to optimum conversion loss 9.54dBm, only worsened 4.26dB.Therefore, as long as rear class is used low-noise device (this is easy to realize at intermediate-frequency band), just can not have much impact to system noise.
Fig. 3 a is the partial schematic diagram of Terahertz mixing antenna chip structure, has provided the structural representation that the structure of the first Schottky diode 106 and the first Schottky diode 106 and the electrode of the second Schottky diode 107 are connected with the flat plane antenna metal.
Fig. 3 b is the partial schematic diagram of the structure of Terahertz mixing antenna chip, and Fig. 3 b has provided the structural representation that the structure of the second Schottky diode 107 and the second Schottky diode 107 and the electrode of the first Schottky diode 106 are connected with the flat plane antenna metal.
Terahertz mixing antenna chip 1 is take the Semi-insulating GaAs material as substrate.On the Semi-insulating GaAs material, be followed successively by from bottom to top: heavy doping n+GaAs layer 42, light dope n-GaAs layer 43.The concentration of n+GaAs layer 42 is 10
18Cm
-3Magnitude, the concentration of n-GaAs layer 43 are 10
16-10
17Cm
-3Magnitude, institute's doping for example are silicon.
The connected mode of Schottky diode 106 and Schottky diode 107 is the method realizations such as the burn into metallization, oxide deposition by the semiconductor epitaxial material.
Shown in Fig. 3 a, the first Schottky diode 106 comprises that the first Schottky contacts anode 51, the first ohmic contact negative electrode 52, the first electroplate lead wire 53, the first Schottky anode extend pressure point 54, have aperture at silicon dioxide layer 44, the first Schottky contacts anode 51 is arranged in aperture, and the first Schottky contacts anode 51 contacts with light dope n-p type gallium arensidep layer 43 and forms schottky junction; The first ohmic contact negative electrode 52 is formed on the heavy doping n+ p type gallium arensidep layer 42; The first electroplate lead wire 53 is formed on silicon dioxide layer 44 and the first Schottky contacts anode 51; The first Schottky anode extends pressure point 54 and is formed on the silicon dioxide layer 44; The first Schottky contacts anode extends pressure point 54 and links to each other with the first Schottky contacts anode 51 by the first electroplate lead wire 53.
Shown in Fig. 3 b, the second Schottky diode 107 comprises that the second Schottky contacts anode 61, the second ohmic contact negative electrode 62, the second electroplate lead wire 63, the second Schottky anode extend pressure point 64, have aperture at silicon dioxide layer 44, the second Schottky contacts anode 61 is arranged in aperture, and the second Schottky contacts anode 61 contacts with light dope n-p type gallium arensidep layer 43 and forms schottky junction; The second ohmic contact negative electrode 62 is formed on the heavy doping n+ p type gallium arensidep layer 42; The second electroplate lead wire 63 is formed on silicon dioxide layer 44 and the second Schottky contacts anode 61; The second Schottky anode extends pressure point 64 and is formed on silicon dioxide layer 44 and the metal 73; The second Schottky contacts anode extends pressure point 64 and links to each other with the second Schottky contacts anode 61 by the second electroplate lead wire 63.
Shown in Fig. 3 a and 3b, the first Schottky contacts anode metal 51 of the first Schottky diode 106 and the second Schottky contacts anode 61 of the second Schottky diode 107 lay respectively on the n-GaAs layer 43; The first ohmic contact negative electrode 52 of the first Schottky diode 106 and the second ohmic contact negative electrode 62 of the second Schottky diode 12 lay respectively on the n+GaAs layer 42.The first Schottky contacts anode metal 51 and the second Schottky contacts anode 61 have respectively silicon dioxide 44 to protect, and silicon dioxide 44 is also as the dielectric of the first capacitance (electric capacity on the sheet) 14.Described a pair of Schottky diode 106, the 107th, parallel and reverse a pair of Schottky diode 106,107 on the space, the upper plane of the upper plane of the first Schottky diode 106 and the second Schottky diode 107 is at same plane, and the lower plane of the lower plane of the first Schottky diode 106 and the second Schottky diode 107 is at same plane.
The anode of the first Schottky diode extends pressure point 54 as the first capacitance 14, the top electrode of 108 (being electric capacity on the sheet), the ohmic contact negative electrode 62 of the second Schottky diode is as the first capacitance 14,108 bottom electrode, extend silicon dioxide layer 44 between pressure point 54 and the second ohmic contact negative electrode 62 as the first capacitance 14 at the anode of the first Schottky diode, 108 dielectric, thus realize the first capacitance 14 between the second ohmic contact negative electrode 62 of the first Schottky contacts anode 51 of the first Schottky diode and the second Schottky diode, 108 connect.
The second Schottky anode of the second Schottky diode extends pressure point (64) and links to each other with the first ohmic contact negative electrode (52) of the first Schottky diode by metal (73), thereby realizes the first ohmic contact negative electrode (52) of the first Schottky diode and the second Schottky contacts anode (61) of the second Schottky diode;
The figure of flat plane antenna is formed by the metal of high conductivity, the second antenna metal 72 of the first antenna metal 71 of utmost point flat plane antenna 104,13) and another utmost point of flat plane antenna 104 all is positioned on the Semi-insulating GaAs layer 41, the second antenna metal 72 directly links to each other with the first ohmic contact negative electrode 52 of the first Schottky diode, and the first antenna metal 71 directly links to each other with the second ohmic contact negative electrode 62 of the second Schottky diode; The ohmic contact negative electrode 62 of the first antenna metal 71 and the second Schottky diode is as the bottom electrode of the first capacitance 14, the very direct current biasing feedback point that powers on of the first capacitance 14; The bottom electrode of the first capacitance 14 is that intermediate-freuqncy signal feeds out a little.
The first capacitance 14 is the vertical stratification of metal-insulator-metal; Do not affect radiance and the impedance behavior of antenna, can realize the end DC-isolation between a pair of two Schottky diodes.
In order to guarantee the first Schottky diode 106 and the not in the same way short circuit of the second Schottky diode 107, use corrosion raceway groove 74 to realize the in the same way isolation of the first Schottky diode 106 and the second Schottky diode 107.The degree of depth of corrosion raceway groove 74 is not less than the thickness sum of n+GaAs layer 42, n-GaAs layer 43 and silicon dioxide layer.Raceway groove 74 is shaped as anti-taper, the lower surface of raceway groove 74 contacts with Semi-insulating GaAs layer (41), the upper surface of raceway groove (74) and described electroplate lead wire (53,63) contact, the side of raceway groove (74) from the lower surface of raceway groove (74) with respect to Semi-insulating GaAs layer (41)) become predetermined angle to extend to upper surface, the upper surface of raceway groove (74) is greater than the lower surface of raceway groove (74), raceway groove (74) is positioned at described Schottky contacts anode extension pressure point (54 in the part of silicon dioxide layer (44), 64) with described Schottky contacts anode (51,61) extend pressure point (54 with described Schottky contacts anode between and not, 64) and described Schottky contacts anode (51,61) contact.
Fig. 4 is Terahertz mixing antenna and intermediate frequency and bias circuit construction schematic diagram proposed by the invention.A complete quasi-optical mixing rate module has comprised subharmonic mixing antenna chip 1, biasing and intermediate-frequency circuit 2 and planar transmission line 3.Subharmonic mixing antenna chip 1 has comprised antiparallel Schottky diode pair, flat plane antenna 13, the first capacitances (being capacitance on the sheet) 14.Wherein antiparallel Schottky diode is to by spatially Schottky diode 11 parallel, reverse-conducting on electrical property and Schottky diode 12 consist of.The anode of Schottky diode 11 is directly to link to each other with the negative electrode of Schottky diode 12; The negative electrode of Schottky diode 11 links to each other by capacitance on the sheet 14 with the anode of Schottky diode 12.Schottky diode 11 has identical electrical property with Schottky diode 12, and the appearance value of capacitance 14 is 1.22pF on the sheet, can be effectively to the signal formation path of 220GHz, and realize the effect of isolated DC.Flat plane antenna 13 has at least two frequency ranges, and these two frequency ranges differ an octave at least, the bandwidth of two frequency ranges even across several octaves.
Biasing shown in Fig. 4 and intermediate-frequency circuit 2 comprise choke induction 21, capacitance 22, choke induction 23, capacitance 24, choke induction 25, _ Ba Lun 26 and low noise amplifier 27.Choke induction 21 is used to Terahertz mixing antenna chip 1 that direct current biasing is provided; Choke induction 23 provides DC loop for the direct current biasing of mixing antenna 1, simultaneously, and for the DC component in the mixed components provides DC earthing.Choke induction 21 and choke induction 23 can be controlled the signal of intermediate-freuqncy signal even higher frequency, and representative value is 47nH.Capacitance 22 and capacitance 24 are used for the direct current of isolated DC biasing and the DC component of mixed components, can pass through intermediate-freuqncy signal, and representative value is 10pF.Ba Lun 26 is used for the intermediate-freuqncy signal with described mixing antenna chip 1 output, is transformed into uneven pattern from balanced mode, and operating frequency is consistent with intermediate frequency.Two terminals of balance end link to each other with capacitance 24 with capacitance 22 respectively, and the terminal of uneven end links to each other with low noise amplifier 27.Finally, output after intermediate-freuqncy signal is amplified by low noise amplifier 27.
When switch 28 disconnects, dc bias current will pass through Schottky diode 12, Schottky diode 11, choke induction 23 successively to ground, so Schottky diode 12 and Schottky diode 11 all are in bias state; And, because Schottky diode 12 has identical electrical property with Schottky diode 11, therefore both bias states are identical, mixing antenna 1 works in the subharmonic mixed-mode, radio frequency signal frequency is the even-multiple of local oscillation signal frequency, and mixing antenna 1 only can be exported the even harmonics component.
Work in the fundamental wave mixing pattern if wish Subharmonic mixer, then with switch 28 closures.When switch 28 closure, dc bias current will once pass through Schottky diode 12, switch 28, inductance 25; And Schottky diode 11 two ends therefore by short circuit, only have Schottky diode 12 work owing to are DC earthing all.In the fundamental wave mixing pattern, radio frequency signal frequency and local oscillation signal frequency are basically identical.Switch 28 for example is single-pole single-throw switch (SPST).
Fig. 5 is flat plane antenna (being on-chip antenna) structural representation proposed by the invention.Its structure is balance type structure, and namely the two poles of the earth figure of flat plane antenna is take the center as the mirror image symmetry.Total therefrom mind-set is divided into three parts outward, is followed successively by: the effective radiation area 201 of radio frequency, the effective radiation area 202 of local oscillator, intermediate frequency draw-out area 203.Wherein intermediate frequency draw-out area 203 also comprises pressure welding point 204.This antenna has two working frequency range at least, and is the octave relation between two working frequency range.By semiconductor technology, on-chip antenna is produced on the gallium arsenide epitaxy material with Schottky diode.The antenna metal is produced on the semi-insulating GaAs layer.In order to reduce loss, the metal thickness of its antenna pattern is not less than the skin depth of local oscillation signal frequency
The polarization of the effective radiation area 201 of its radio frequency can be circular polarization (such as helical antenna, but being not limited to this form) or linear polarization (such as butterfly antenna, logarithm periodic antenna, but being not limited to this form); The polarization of the effective radiation area 202 of its local oscillator is linear polarization.
Subharmonic mixing with 220GHz is applied as example, and the effective radiation area 201 of radio frequency adopts the logarithm periodic antenna form of linear polarization, and working frequency range is 200-240GHz, and the dimensional parameters of logarithm periodic antenna is: external diameter=130um, the number of teeth=3, boss ratio=1.8; The effective radiation area of local oscillator 202 adopts typical dipole antenna form, and operating frequency (being centre frequency) is 109GHz, and the dimensional parameters of dipole antenna is: path length=260um, subtended angle=90 °.In order not affect the effectively centre frequency in district 202 of local oscillator, intermediate frequency draw-out area 203 only is comprised of pressure welding point 204.Pressure welding point is of a size of the square of 200um * 200um, does not affect frequency and the radiation characteristic of antenna; In addition, the form of spun gold pressure welding or flip chip bonding is convenient to adopt with intermediate-frequency circuit in such intermediate frequency draw-out area 203.
More than the description of embodiments of the invention only is used for illustrating technical scheme of the present invention; rather than limitation of the scope of the invention; the present invention is not limited to disclosed these embodiment; those skilled in the art can make amendment to the technical scheme that aforementioned each embodiment puts down in writing; perhaps part technical characterictic wherein is equal to replacement, and these modifications or replace and all should fall into protection scope of the present invention.
Claims (16)
1. a Terahertz mixing antenna comprises flat plane antenna (104), a pair of Schottky diode (106,107), the first capacitance (108); Described a pair of Schottky diode (106,107) comprise the first Schottky diode (106) and the second Schottky diode (107), the first Schottky diode (106) and the second Schottky diode (107) be two independently, the diode that performance is identical, the negative electrode of the first Schottky diode (106) links to each other by the first capacitance (108) with the anode of the second Schottky diode (107), and the anode of the first Schottky diode (106) directly links to each other with the negative electrode of the second Schottky diode (107) or links to each other by resistance (109); Described a pair of Schottky diode (106,107) is positioned at the radio-frequency feed port of flat plane antenna (104); Radiofrequency signal (101) is spacing wave with local oscillation signal (102), radiofrequency signal (101) is passed through flat plane antenna (104) by the Space Coupling feed-in, local oscillation signal (102) passes through flat plane antenna (104) by the Space Coupling feed-in, after the radiofrequency signal and a pair of Schottky diode mixing of local oscillation signal process by feed-in that flat plane antenna is coupled, output intermediate-freuqncy signal (1031,1032), intermediate-freuqncy signal is exported with the leading current forms by the flat plane antenna outermost.
2. described Terahertz mixing antenna according to claim 1, it is characterized in that: when giving the first Schottky diode (106) and the second Schottky diode (107) when applying direct current biasing simultaneously, described mixing antenna works in the subharmonic mixed-mode, radio frequency signal frequency is the even-multiple of local oscillation signal frequency, and described mixing antenna only can be exported the even harmonics component; The mixing antenna works in the fundamental wave mixing pattern when applying direct current biasing for one of the first Schottky diode (106) and second Schottky diode (107), and radio frequency signal frequency and local oscillation signal frequency are basically identical.
3. described Terahertz mixing antenna according to claim 1, it is characterized in that: flat plane antenna is at least functioning in two frequency ranges, and these two frequency ranges have the octave relation; Perhaps these two frequency ranges have broadband character, and bandwidth can cover several octaves; Flat plane antenna adopts broad-band antenna, and broad-band antenna is butterfly antenna, logarithm periodic antenna or helical antenna.
4. described Terahertz mixing antenna according to claim 1, it is characterized in that: the signal spectrum component of described mixing antenna output is: | mf
RF± nf
LO|, wherein m+n is odd number, f
RF, f
LOAnd f
IFSatisfy 2nf
LO± f
IF=f
RF, n is integer, f
IFThe intermediate-freuqncy signal frequency, f
LOThe local oscillation signal frequency, f
RFIt is radio frequency signal frequency.
5. described Terahertz mixing antenna according to claim 1 is characterized in that the magnitude of resistance value of resistance (109) is 10
-3Below the Ω.
6. described Terahertz mixing antenna according to claim 1, it is characterized in that: the mixing antenna adopts semiconductor technology to make, the chip of mixing antenna is as substrate take Semi-insulating GaAs layer (41), form heavy doping n+ p type gallium arensidep layer (42) at Semi-insulating GaAs layer (41), form light dope n-p type gallium arensidep layer (43) at heavy doping n+ p type gallium arensidep layer (42); Silicon dioxide layer (44) is formed on the light dope n-p type gallium arensidep layer (43), and the concentration of heavy doping n+GaAs layer 42 is 10
18Cm
-3Magnitude, the concentration of light dope n-GaAs layer (43) is 10
16-10
17Cm
-3Magnitude; Institute's doping is silicon; Described a pair of Schottky diode (106,107) be a pair of Schottky diode (106 parallel and reverse on the space, 107), the upper plane of the upper plane of the first Schottky diode (106) and the second Schottky diode (107) is at same plane, and the lower plane of the lower plane of the first Schottky diode (106) and the second Schottky diode (107) is at same plane;
The first Schottky diode (106) comprises that the first Schottky contacts anode (51), the first ohmic contact negative electrode (52), the first electroplate lead wire (53), the first Schottky anode extend pressure point (54), have aperture at silicon dioxide layer (44), the first Schottky contacts anode (51) is arranged in aperture, and the first Schottky contacts anode (51) contacts with light dope n-p type gallium arensidep layer (43) and forms schottky junction; The first ohmic contact negative electrode (52) is formed on the heavy doping n+ p type gallium arensidep layer (42); The first electroplate lead wire (53) is formed on silicon dioxide layer (44) and the first Schottky contacts anode (51); The first Schottky anode extends pressure point (54) and is formed on the silicon dioxide layer (44); The first Schottky contacts anode extends pressure point (54) and links to each other with the first Schottky contacts anode (51) by the first electroplate lead wire (53);
The second Schottky diode (107) comprises that the second Schottky contacts anode (61), the second ohmic contact negative electrode (62), the second electroplate lead wire (63), the second Schottky anode extend pressure point (64), have aperture at silicon dioxide layer (44), the second Schottky contacts anode (61) is arranged in aperture, and the second Schottky contacts anode (61) contacts with light dope n-p type gallium arensidep layer (43) and forms schottky junction; The second ohmic contact negative electrode (62) is formed on the heavy doping n+ p type gallium arensidep layer (42); The second electroplate lead wire (63) is formed on silicon dioxide layer (44) and the second Schottky contacts anode (61); The second Schottky anode extends pressure point (64) and is formed on silicon dioxide layer (44) and the metal (73); The second Schottky contacts anode extends pressure point (64) and links to each other with the second Schottky contacts anode (61) by the second electroplate lead wire (63);
The anode of the first Schottky diode extends pressure point (54) as the first capacitance (14,108) top electrode, the ohmic contact negative electrode (62) of the second Schottky diode is as the first capacitance (14,108) bottom electrode, the anode that is positioned at the first Schottky diode extends silicon dioxide layer (44) between pressure point (54) and the second ohmic contact negative electrode (62) as the first capacitance (14,108) dielectric, thereby realize that the first capacitance (14,108) between the second ohmic contact negative electrode (62) of the first Schottky contacts anode (51) of the first Schottky diode and the second Schottky diode connects;
The second Schottky anode of the second Schottky diode extends pressure point (64) and links to each other with the first ohmic contact negative electrode (52) of the first Schottky diode by metal (73), thereby realizes the first ohmic contact negative electrode (52) of the first Schottky diode and the second Schottky contacts anode (61) of the second Schottky diode;
The figure of flat plane antenna is formed by the metal of high conductivity, flat plane antenna (104, the second antenna metal (72) of the first antenna metal (71) of a utmost point 13) and another utmost point of flat plane antenna (104) all is positioned on the Semi-insulating GaAs layer (41), and the first antenna metal (71) directly links to each other with the second ohmic contact negative electrode (62) of the second Schottky diode; The second antenna metal (72) directly links to each other with the first ohmic contact negative electrode (52) of the first Schottky diode.
7. described Terahertz mixing antenna according to claim 6 is characterized in that: have corrosion raceway groove (74) between two Schottky contacts anodes, realizes that two schottky junction electric currents isolate; The degree of depth of described raceway groove (74) is not less than the thickness sum of n+ p type gallium arensidep, n-p type gallium arensidep and silicon dioxide.
8. Terahertz mixing antenna according to claim 7 is characterized in that:
Raceway groove (74) is shaped as anti-taper, the lower surface of raceway groove (74) contacts with Semi-insulating GaAs layer (41), the upper surface of raceway groove (74) and described electroplate lead wire (53,63) contact, the side of raceway groove (74) from the lower surface of raceway groove (74) with respect to Semi-insulating GaAs layer (41)) become predetermined angle to extend to upper surface, the upper surface of raceway groove (74) is greater than the lower surface of raceway groove (74), raceway groove (74) is positioned at described Schottky contacts anode extension pressure point (54 in the part of silicon dioxide layer (44), 64) with described Schottky contacts anode (51,61) extend pressure point (54 with described Schottky contacts anode between and not, 64) and described Schottky contacts anode (51,61) contact.
9. described Terahertz mixing antenna according to claim 6 is characterized in that: the very direct current biasing feedback point that powers on of the first capacitance (14); The bottom electrode of the first capacitance (14) is that intermediate-freuqncy signal feeds out a little.
10. the described Terahertz mixing of arbitrary claim antenna is characterized in that according to claim 1-9, and flat plane antenna (104,13) has balance type structure, and the two poles of the earth figure of flat plane antenna take at the center as the mirror image symmetry; Flat plane antenna therefrom mind-set is divided into three parts outward, is followed successively by: the effective radiation area of radio frequency (201), the effective radiation area of local oscillator (202), intermediate frequency draw-out area (203); The polarization of the effective radiation area of radio frequency (201) can be circular polarization or linear polarization; The polarization of the effective radiation area of local oscillator (202) is linear polarization, and the length of intermediate frequency draw-out area is much smaller than the wavelength of intermediate-freuqncy signal; Intermediate frequency draw-out area (203) also comprises pressure welding point (204);
The figure of flat plane antenna is formed by the metal of high conductivity, is produced on the semi-insulating GaAs substrate by semiconductor technology, and the thickness that forms the metal of flat plane antenna figure is not less than the skin depth of local oscillation signal frequency.
11. Terahertz mixing antenna according to claim 10, it is characterized in that, the effective radiation area of radio frequency (201) is helical antenna or butterfly antenna, and intermediate frequency draw-out area (203) only are comprised of pressure welding point (204), and pressure welding point is of a size of the square of 200um * 200um.
12. Terahertz mixing antenna according to claim 10 is characterized in that, the mixing antenna is the subharmonic mixing antenna of 220GHz; The effective radiation area of radio frequency (201) adopts the logarithm periodic antenna form of linear polarization, and working frequency range is 200-240GHz, and the dimensional parameters of the logarithm periodic antenna of linear polarization is: external diameter=130um, the number of teeth=3, boss ratio=1.8; The effective radiation area of local oscillator (202) adopts the dipole antenna form, and operating frequency is 109GHz, and the dimensional parameters of dipole antenna is: path length=260um, subtended angle=90 °; Intermediate frequency draw-out area (203) only is comprised of pressure welding point (204), and pressure welding point is of a size of the square of 200um * 200um.
13. a quasi-optical frequency mixing module that comprises the described Terahertz mixing of arbitrary claim antenna among the claim 1-12 comprises biasing and intermediate-frequency circuit (2), planar transmission line (3); Biasing comprises the first choke induction (21), the second choke induction (23), the second capacitance (22), the 3rd capacitance (24), Ba Lun (26) and low noise amplifier (27) with intermediate-frequency circuit (2);
The first choke induction (21) provides direct current biasing for described mixing antenna, one end of the first choke induction (21) is connected with direct voltage (Vcc), and the other end of the first choke induction (21) links to each other with the second Schottky diode anode of described mixing antenna;
One end ground connection of the second choke induction (23), the other end links to each other with the negative electrode of the first Schottky diode of described mixing antenna by planar transmission line (3), for the direct current biasing of mixing antenna provides DC loop, the first choke induction (21) and the second choke induction (23) are to the direct current signal conducting and control intermediate-freuqncy signal and the signal higher than the frequency of intermediate-freuqncy signal;
The middle frequency difference sub-signal of described mixing antenna output arrives respectively the balance end of Ba Lun (26) via the second capacitance (22) and the 3rd capacitance (24), after the conversion of the balanced-unbalanced of process Ba Lun, output after being amplified by low noise amplifier again; Described mixing antenna works in the subharmonic mixed-mode.
14. quasi-optical frequency mixing module according to claim 13 is characterized in that, described quasi-optical mixing rate module also comprises the 3rd choke induction (25) and single-pole single-throw switch (SPST) (28);
One end ground connection of the 3rd choke induction (25), the other end links to each other with an end of single-pole single-throw switch (SPST) (28), single-pole single-throw switch (SPST) (28) is by first Schottky diode (106 of planar transmission line (3) with described mixing antenna, 11) anode links to each other, and described the 3rd choke induction (25) is to the direct current signal conducting and control intermediate-freuqncy signal and the signal higher than the frequency of intermediate-freuqncy signal;
When single-pole single-throw switch (SPST) (28) is closed, dc bias current will be through the first choke induction (21), the second Schottky diode (107,12), single-pole single-throw switch (SPST) (28), the second choke induction (25), the second Schottky diode (107,12) work, and the first Schottky diode (106,11) two ends all are DC earthing, thereby the first Schottky diode (106,11) do not work, described mixing antenna works in the fundamental wave mixing pattern;
When single-pole single-throw switch (SPST) (28) disconnects, apply simultaneously direct current biasing for the first Schottky diode (106,11) and the second Schottky diode (107,12), the mixing antenna works in the subharmonic mixed-mode.
15. according to claim 13 or 14 described quasi-optical frequency mixing module, it is characterized in that: the mixing antenna output end is axisymmetric with respect to the mixing antenna to two sections circuit of Ba Lun balance end, guarantees the degree of balance of balanced signal.
16. quasi-optical frequency mixing module according to claim 15 is characterized in that: the capacitance of the first capacitance (14,108) is 1.22pF; The capacitance of the second capacitance (22) and the 3rd capacitance (24) is 10pF; The inductance value of the first choke induction (21) and the second choke induction (23) is 47nH.
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