CN105449377A - Huge terahertz antenna array based on semiconductor process - Google Patents
Huge terahertz antenna array based on semiconductor process Download PDFInfo
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- CN105449377A CN105449377A CN201510957812.XA CN201510957812A CN105449377A CN 105449377 A CN105449377 A CN 105449377A CN 201510957812 A CN201510957812 A CN 201510957812A CN 105449377 A CN105449377 A CN 105449377A
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- terahertz
- antenna array
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
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Abstract
The invention discloses a huge terahertz antenna array based on a semiconductor process. The terahertz antenna array comprises 10<4> to 10<7> orders of terahertz antenna array elements, wherein the terahertz antenna array is formed by arranging a plurality of terahertz antenna array elements, a terahertz phase-array antenna array is integrated on a silicon-based wafer by a complementary metal oxide semiconductor (CMOS) process to achieve space energy synthesis and beam forming, and a high-gain narrow beam antenna is formed; the size of a single terahertz antenna array element is 1 millimeter order, the disc-type antenna array with 1 meter order radius contains 3.14*(1000)<2> (3.14 million) orders of single terahertz antenna array elements, so that a terahertz wave with the frequency of 300GHz provides gain of 60dB, and the beam width is 0.14 degree; and a plurality of silicon-based wafers also can be spliced to finally form the antenna array integrated with 10<7> orders of single terahertz antenna array elements. With the utilization of the characteristics of the terahertz wireless radio wave, a standard semiconductor process line is used for designing and achieving the antenna array with thousands, even millions and tens of millions of units.
Description
Technical field
The present invention relates to a kind of flood tide Terahertz antenna array of the novel based semiconductor technique for communicating between Satellite.
Background technology
Microwave communication techniques has in the application of inter-satellite link and exceedes semicentennial history, and in order to meet the amount of communication data requirement day by day increased as blast, required Microwave bandwidth improves constantly, and causes carrier frequency rapidly to improve.Operating frequency as the military satellite communication system inter-satellite link of a new generation of the U.S. reaches 60GHz.As everyone knows, the huge problem that microwave and millimeter wave communication faces is space link decay, and the feature communicated between star overlength distance exactly." three magic weapons " (high transmit power, large aperture antenna battle array, pole low-noise reception) that tradition ground millimetre-wave attenuator uses, due to the restriction of device, cannot meet the actual requirement of the more farther transmission range of High Data Rate further under space environment.And space laser communication modes swings because space platform shake can make Emission Lasers bundle produce.Communication disruption or error rate of system is caused to increase, very harsh for the requirement of aiming at tracking system in telecommunication.
Terahertz (THz) frequency range is higher than millimeter wave lower than LONG WAVE INFRARED, and its band limits is (wavelength 1mm ~ 10 μm) between 0.3THz to 30THz.From the angle of microwave electronics, Terahertz is a kind of submillimeter wave, and from the angle of infrared optics, Terahertz is a kind of far infrared wave.Because the wavelength of Terahertz is tens microns of scopes to hundreds of micron, just in time drops on current semiconductor technology and can add within individual range scale.Due to the fast development of semiconductor technology, the antenna element utilizing semiconductor technology to realize flood tide is made to become possibility.
Summary of the invention
Utilize Terahertz to possess the feature of radio wave, utilize standard semi-conductor processes line (as CMOS) design to realize the antenna array of unit up to ten thousand and even millions of, tens million of.The electronic scanning mode energy rapid adjustment beam direction of antenna array, thus realize the aligning of wave beam between transceiver.Non-coherent demodulation mode requires it is not so strict to the geometry spacing of antenna array and geometric position, so a lot of flood tide antenna array can be stacked up in lift-off process, arrive space and has launched later again, to expand the equivalent bore of antenna array.
The flood tide Terahertz antenna array of a kind of based semiconductor technique that the present invention proposes, comprises 10
4~ 10
7a magnitude Terahertz bay, described Terahertz antenna array carries out arrangement by multiple Terahertz bay and is formed, adopt CMOS technology line by the synthesis of integrated Terahertz phased-array antenna array implementation space energy on silicon-based wafer and Wave beam forming, form the narrow beam antenna of high-gain; Single Terahertz bay is of a size of 1mm magnitude, and the disk aerial array of 1 meter of magnitude radius comprises 3.14 × (1000)
2=314 ten thousand magnitudes single Terahertz bay, thus provide the gain of 60dB for the THz wave of 300GHz frequency, its beamwidth is 0.14 °.
Described CMOS technology line is the one in 40 nanometer CMOS process lines, 65 nanometer CMOS process lines, 0.13 micrometre CMOS process line, 0.18 micrometre CMOS process line.
The present invention is based on the flood tide Terahertz antenna array of semiconductor technology, be spliced by the multi-disc 12 cun or multi-disc 8 cun of silicon-based wafers being integrated with Terahertz bay.
Described silicon-based wafer is 12 cun of silicon-based wafers, and these 12 cun of silicon-based wafers adopt 0.13 micrometre CMOS process line to be integrated with 10
416 such 12 cun of silicon-based wafers being integrated with single Terahertz bay are spliced to form and comprise 10 by the single Terahertz bay of the order of magnitude
7the flood tide Terahertz antenna array of a magnitude Terahertz bay.
The fundamental resonance of antenna is half-wave resonant, and that is 100 microns just can form resonance.Longer resonance receiving efficiency is higher.And the machining accuracy of now ripe Si semiconductor technique is all arrive tens nanometer at deep-submicron, even, be enough to the requirement on machining accuracy meeting antenna array.Suppose to be operated in the terahertz electromagnetic wave that free space wavelength is 600 microns (500GHz), at dielectric constant be 9.8 silica-based plinth on effective wavelength be about 200um.According to the general principle of antenna resonance, as long as overall antenna length degree and half-wavelength is comparable just resonance can occur, so utilize radius to be the spiral inductance that the standard radio frequency inductance processes of 75 microns goes out four circles, be just equivalent to the annular electromagnetic antenna that a length is 900 microns.Process according to there being 0.13 micrometre CMOS process line of nearly 20 years commercialization large-scale processing history, one square millimeter can obtain about 49 such four circle micro loop antennas, so in theory 12 inch standard wafers (namely diameter is 300 millimeters) can realize the micro-shape antenna such up to 122.5 ten thousand.
Accompanying drawing explanation
Antenna array in the single-wafer of Fig. 1 based semiconductor technique;
The polycrystalline circle flood tide antenna array of Fig. 2 based semiconductor technique.
Embodiment
Be described in further detail technical solution of the present invention below in conjunction with the drawings and specific embodiments, described specific embodiment only explains the present invention, not in order to limit the present invention.
The flood tide Terahertz antenna array of a kind of based semiconductor technique of the present invention, comprises 10
4~ 10
7a magnitude Terahertz bay, described Terahertz antenna array carries out arrangement by multiple Terahertz array element and is formed, adopt such as 40 nanometers, 65 nanometers, a kind of CMOS technology line in 0.13 micron, 0.18 micron by the synthesis of integrated Terahertz phased-array antenna array implementation space energy on silicon-based wafer (Space-powerCombining) and Wave beam forming (Beamforming), form the narrow beam antenna of high-gain.Antenna array schematic diagram in the single-wafer being illustrated in figure 1 based semiconductor technique of the present invention.Single Terahertz bay is of a size of 1mm magnitude, and the disk aerial array of 1 meter of magnitude radius integratedly can comprise 3.14 × (1000)
2=314 ten thousand magnitudes single Terahertz bay, thus the gain of 60dB can be provided for the THz wave of 300GHz frequency, its beamwidth is 0.14 °.
The flood tide Terahertz antenna array that the present invention is based on semiconductor technology can be spliced by the multi-disc 12 cun or multi-disc 8 cun of silicon-based wafers being integrated with Terahertz bay.Such as: on a slice 12 cun of silicon-based wafers, adopt 0.13 micrometre CMOS process line to be integrated with 10
416 such 12 cun of silicon-based wafers being integrated with single Terahertz bay are spliced to form and comprise 10 by the single Terahertz bay of the order of magnitude
7the flood tide Terahertz antenna array of a magnitude Terahertz bay.
Fig. 2 is the flood tide antenna array that the polycrystalline circle connecting method of based semiconductor technique is formed.Because the limited diameter of current semiconductor silicon based wafer, if common 12 cun of diameter wafers are 30cm, so for realizing the aerial array of heavy caliber (as 1m), multiple 12 cun of wafers are needed to splice, integrate out the heavy caliber flood tide antenna array system of sub-circular, to increase receiving area, assemble the energy that receives, reduce APT to alignment request.In addition, Terahertz flood tide aerial array can carry out resonance absorption to the incident wave of characteristic frequency, amplifies to received signal on the one hand, can suppress other anti-resonance frequency on the other hand, this receive mode can reach ' monochrome ' and receive, and the noise of ambient interferences is reduced.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the prerequisite not departing from the technology of the present invention principle; can also make some improvements and modifications, but these improvements and modifications also should be considered as protection scope of the present invention.
Claims (4)
1. a flood tide Terahertz antenna array for based semiconductor technique, is characterized in that: comprise 10
4~ 10
7a magnitude Terahertz bay, described Terahertz antenna array carries out arrangement by multiple Terahertz bay and is formed, adopt CMOS technology line by the synthesis of integrated Terahertz phased-array antenna array implementation space energy on silicon-based wafer and Wave beam forming, form the narrow beam antenna of high-gain; Single Terahertz bay is of a size of 1mm magnitude, and the disk aerial array of 1 meter of magnitude radius comprises 3.14 × (1000)
2=314 ten thousand magnitudes single Terahertz bay, thus provide the gain of 60dB for the THz wave of 300GHz frequency, its beamwidth is 0.14 °.
2. the flood tide Terahertz antenna array of based semiconductor technique according to claim 1, is characterized in that: CMOS technology line is the one in 40 nanometer CMOS process lines, 65 nanometer CMOS process lines, 0.13 micrometre CMOS process line, 0.18 micrometre CMOS process line.
3. the flood tide Terahertz antenna array of based semiconductor technique according to claim 1, is characterized in that: be spliced by the multi-disc 12 cun or multi-disc 8 cun of silicon-based wafers that are integrated with Terahertz bay.
4. the flood tide Terahertz antenna array of based semiconductor technique according to claim 3, is characterized in that: described silicon-based wafer is 12 cun of silicon-based wafers, these 12 cun of silicon-based wafers adopts 0.13 micrometre CMOS process line to be integrated with 10
416 such 12 cun of silicon-based wafers being integrated with single Terahertz bay are spliced to form and comprise 10 by the single Terahertz bay of the order of magnitude
7the flood tide Terahertz antenna array of a magnitude Terahertz bay.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201510957812.XA CN105449377A (en) | 2015-12-16 | 2015-12-16 | Huge terahertz antenna array based on semiconductor process |
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| CN201510957812.XA CN105449377A (en) | 2015-12-16 | 2015-12-16 | Huge terahertz antenna array based on semiconductor process |
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| CN105449377A true CN105449377A (en) | 2016-03-30 |
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| CN201510957812.XA Pending CN105449377A (en) | 2015-12-16 | 2015-12-16 | Huge terahertz antenna array based on semiconductor process |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020088511A1 (en) * | 2018-10-30 | 2020-05-07 | 华为技术有限公司 | Apt subsystem and communication system for spacecraft |
Citations (5)
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|---|---|---|---|---|
| US4823136A (en) * | 1987-02-11 | 1989-04-18 | Westinghouse Electric Corp. | Transmit-receive means for phased-array active antenna system using rf redundancy |
| CA2121153A1 (en) * | 1993-04-19 | 1994-10-20 | John C. Conrad | Active antenna array |
| WO2004109851A1 (en) * | 2003-05-30 | 2004-12-16 | Raytheon Company | Monolithic millmeter wave reflect array system |
| CN102983388A (en) * | 2012-10-11 | 2013-03-20 | 孙丽华 | Terahertz frequency mixing antenna and quasi-optical frequency mixing module |
| CN105026970A (en) * | 2013-01-08 | 2015-11-04 | 麻省理工学院 | Optical phased arrays |
-
2015
- 2015-12-16 CN CN201510957812.XA patent/CN105449377A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4823136A (en) * | 1987-02-11 | 1989-04-18 | Westinghouse Electric Corp. | Transmit-receive means for phased-array active antenna system using rf redundancy |
| CA2121153A1 (en) * | 1993-04-19 | 1994-10-20 | John C. Conrad | Active antenna array |
| WO2004109851A1 (en) * | 2003-05-30 | 2004-12-16 | Raytheon Company | Monolithic millmeter wave reflect array system |
| CN102983388A (en) * | 2012-10-11 | 2013-03-20 | 孙丽华 | Terahertz frequency mixing antenna and quasi-optical frequency mixing module |
| CN105026970A (en) * | 2013-01-08 | 2015-11-04 | 麻省理工学院 | Optical phased arrays |
Non-Patent Citations (1)
| Title |
|---|
| SAMET ZIHIR等: "A 60 GHz Single-Chip 256-Element Wafer-Scale Phased Array with EIRP of 45 dBm Using Sub-Reticle Stitching", 《2015 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020088511A1 (en) * | 2018-10-30 | 2020-05-07 | 华为技术有限公司 | Apt subsystem and communication system for spacecraft |
| US11387903B2 (en) | 2018-10-30 | 2022-07-12 | Huawei Technologies Co., Ltd. | APT subsystem and spacecraft communications system |
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