CN104422517A - Terahertz wave frequency spectrum detector - Google Patents
Terahertz wave frequency spectrum detector Download PDFInfo
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- CN104422517A CN104422517A CN201310410510.1A CN201310410510A CN104422517A CN 104422517 A CN104422517 A CN 104422517A CN 201310410510 A CN201310410510 A CN 201310410510A CN 104422517 A CN104422517 A CN 104422517A
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Abstract
The invention discloses a terahertz wave frequency spectrum detector which takes a high-electron-mobility transistor as a basic structure, an antenna is arranged at the channel of the high-electron-mobility transistor so as to generate terahertz electric field, the antenna and the high-electron-mobility transistor are integrally arranged, the antenna is completely independent from a source electrode and a drain electrode of the high-electron-mobility transistor, the antenna consists of a first antenna and a second antenna, the first antenna is connected with a first grid electrode so as to adjust the concentration of two-dimensional electron gas; the second antenna is connected with a second grid electrode and a third grid electrode so as to form a two-dimensional plasmonic wave resonance cavity, the second grid electrode and the third grid electrode are respectively positioned on two sides of the first grid electrode. Under the irradiation of terahertz wave, an open-circuit voltage or short-circuit current signal is formed on two ends of the detector, and the terahertz frequency can be obtained through scanning grid voltage. The regulation of the grid electrodes on two-dimensional plasmonic wave can be effectively enhanced, the high-speed, high-efficiency, high-sensitivity and low-noise frequency spectrum detection of the terahertz wave can be realized, and the structure is minimized and highly integrated.
Description
Technical field
The present invention relates to a kind of THz wave frequency spectrum detector of semiconductor terahertz light electro-technical field, by the frequency spectrum detection regulating detecting device grid voltage to realize THz wave.
Background technology
Terahertz (Terahertz, 1 THz=10
12hz ~ 1ps
-1~ 300 μm ~ 33cm
-1~ 4.1 meV ~ 47.6 K) radiation is commonly referred to as wavelength at 30 μm of-3 mm(0.1 THz-10 THz) interval electromagnetic wave, its frequency range is between microwave and infrared light.With other electromagnetic wave phase ratios, THz wave has relevant, that low energy, high bandwidth, fingerprint characteristic, penetrability etc. are unique, excellent characteristic.Above feature determines the many applications of THz wave, mainly comprises information and communication technology (ICT), biology and medical research, Non-Destructive Testing, nondestructive examination, Homeland Security, food and Agricultural development quality control, global environment detection, satellite remote sensing, aerial image, safety detection, material inner structure chromatography, pathology detection, medical imaging, Matter Composition analysis, Near-Field Radar Imaging, ultrafast calculating etc.Realize above application THz wave detecting device particularly crucial.But existing Terahertz detecting device does not possess frequency spectrum resolution characteristic, the Fourier transform therefore needing the spectrum detection device such as Fourier spectrometer to do the long period obtains Terahertz frequency spectrum.Therefore, researchist thirsts for developing a kind of THz wave detecting device with frequency spectrum resolution characteristic, significantly to promote development and the application of THz technology for a long time always.Within 1993, the shallow water wave models of finite size two-dimensional electron gas is proposed first (with reference to Phys. Rev. Lett. Vol 71, p 2465 (1993) by M. Dyakonov and M. S. Shur.They point out under characteristic boundaries condition, and the two-dimensional electron gas system of finite size exists the plasma wave of resonance form, and by the adjustable plasma wave resonant frequency of grid voltage, its single order pattern can simply be expressed as
, wherein
for plasma wave resonant frequency, L is grid long (resonator is long),
for Applied gate voltages,
for threshold voltage, e is the Single Electron quantity of electric charge,
for electron effective mass.By the Resonator design of specific dimensions, make plasma wave resonant frequency be in Terahertz frequency range, and regulate Terahertz frequency by grid voltage, therefore the field effect transistor of particular design can realize THz wave frequency spectrum detection.The first THz wave frequency spectrum detector based on this theory in the whole world is prepared (with reference to Appl. Phys. Lett. Vol 80 by people such as W. Knap and Y.Deng in 2002, p 3433 (2002)), it is a High Electron Mobility Transistor based on the two-dimensional electron gas of AlGaAs/GaAs, device gate length is 150 nm, for the formation of plasma wave resonator cavity and adjustment resonant frequency, incident THz wave and plasma wave are resonated, thus realizes Terahertz frequency spectrum detection.But the frequency spectrum resolution characteristic of this frequency spectrum detector is lower, and there is larger non-frequency spectrum detection background signal, also need at pole low operating temperatures.Realize the application of such detecting device, need to improve spectral resolution further, reduce background signal, improve device operating temperature.
Summary of the invention
The object of the invention is to propose a kind of THz wave frequency spectrum detector, existing high electron mobility THz wave frequency spectrum detector spectral resolution is low to overcome, background signal is large, need the defects such as pole low-temperature working.
For achieving the above object, the invention provides following technical scheme:
This application discloses a kind of THz wave frequency spectrum detector, take High Electron Mobility Transistor as basic structure, the raceway groove place of described High Electron Mobility Transistor is provided with antenna, to produce Terahertz electric field, described antenna and the integrated setting of High Electron Mobility Transistor, and with the source electrode of High Electron Mobility Transistor and the independence completely that drain, described antenna comprises first day line and the second antenna, the first described antenna is connected to first grid, to regulate two-dimensional electron gas; The second described antenna is connected to second grid and the 3rd grid, and to form two-dimentional plasma wave resonator cavity, described second grid and the 3rd grid lay respectively at the both sides of described first grid.
Preferably, in above-mentioned THz wave frequency spectrum detector, described antenna is connected to lead-in wire electrode by terahertz filter.
Preferably, in above-mentioned THz wave frequency spectrum detector, described terahertz filter is the metal nanometer line of inflection.
Preferably, in above-mentioned THz wave frequency spectrum detector, on described High Electron Mobility Transistor and the integrated substrate epitaxial sheet being arranged at band two-dimensional electron gas substrate of antenna.
Preferably, in above-mentioned THz wave frequency spectrum detector, described two-dimensional electron gas substrate comprises the separation layer, epitaxial loayer and the substrate layer that stack gradually from top to bottom, the source electrode of described high electron mobility field effect transistor, drain and gate and antenna be arranged on be formed at substrate epitaxial sheet active area on, and this source electrode and drain electrode are by being arranged on the two-dimensional electron gas expanding channels in substrate layer.
Compared with prior art, the invention has the advantages that: this THz wave frequency spectrum detector is by adopting the butterfly antenna structure independent of source electrode and drain electrode, and the nanometer gate forming plasma wave resonator cavity is directly connected with antenna by employing, make detector arrangement more compact, and in conjunction with asymmetric gate and multi-grid structure design, effectively can improve the regulation and control of grid to two-dimentional plasma wave, realize the frequency spectrum detection of the high speed to THz wave, efficient, highly sensitive and low noise.Meanwhile, this THz wave frequency spectrum detector in the temperature work higher than 77 K, significantly can be expanded the range of application of THz wave, and save application cost.In addition, by conjunction with existing semiconductor microactuator processing and manufacturing technology, device architecture of the present invention more miniaturization can be made, be conducive to the efficiently integrated of Terahertz system.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present application or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, the accompanying drawing that the following describes is only some embodiments recorded in the application, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Figure 1 shows that the vertical view of THz wave frequency spectrum detector in the specific embodiment of the invention;
Figure 2 shows that the cut-open view of THz wave frequency spectrum detector in the specific embodiment of the invention.
Embodiment
The present invention forms plasma wave resonator cavity by two grids of high electron mobility field-effect transistor, the regulation and control of another grid by regulating two-dimensional electron gas to realize plasma wave frequency, thus realizes Terahertz frequency spectrum detector.Be connected with grid by Terahertz antenna, efficiently can excite the plasma wave in resonator cavity, thus effectively improve detecting device spectral response.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be described in detail the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under the prerequisite not making creative work, all belongs to the scope of protection of the invention.
As shown in Figure 1-2, the present embodiment THz wave frequency spectrum detector, primarily of High Electron Mobility Transistor and butterfly Terahertz antenna composition, is integrated on two-dimensional electron gas epitaxial substrate, is realized by the micro-processing technology of existing maturation.Antenna is used in electron channel, produce Terahertz electric field, thus effectively excites and produce two-dimentional plasma wave.
Antenna comprises first day line 71 and the second antenna 72.Second antenna 72 is connected to second grid 41 and the 3rd grid 42, and second grid 41 and the 3rd grid 42 are in order to form plasma wave resonator cavity 6; First antenna 71 is connected to first grid 3, and first grid 3 for regulating two-dimensional electron gas 11 concentration, thus realizes the adjustment of plasma wave frequency.
The both sides being distributed in first grid 3 of second grid 41 and the 3rd grid 42 symmetry, for eliminating the background signal of non-frequency spectrum detection part.
Antenna is arranged between source electrode 1 and drain electrode 2, and is totally independent of source electrode 1 and drain electrode 2, more effectively can excite the plasma wave in resonator cavity.
Terahertz filter 8 is integrated between antenna and lead-in wire electrode 9, for eliminating interaction between the two, thus better maintains the original resonance characteristic of antenna, and eliminates the low-frequency noise signal of lead-in wire electrode.Wave filter 8 is prepared from by micro Process by the metal nanometer line of inflection.
On High Electron Mobility Transistor and the integrated substrate epitaxial sheet being arranged at band two-dimensional electron gas substrate of antenna.
Two-dimensional electron gas substrate comprises the separation layer 10, epitaxial loayer 12 and the substrate layer 13 that stack gradually from top to bottom, source electrode 1, drain 2 and grid 3,41,42 and antenna of high electron mobility field effect transistor are arranged on and are formed on the active area 5 of substrate epitaxial sheet, and this source electrode 1 and drain electrode 2 are by being arranged on the two-dimensional electron gas expanding channels in substrate layer 13.
The preparation process of the present embodiment THz wave frequency spectrum detector is as follows: first by semiconductor etching techniques, substrate epitaxial sheet is formed with source region 5, and stays the two-dimensional electron gas passage of next conduction.Then by micro-processing technology, table top is prepared source electrode 1, drain electrode 2, grid 3 and 41,42, wherein source electrode 1 and drain electrode 2 form Ohmic contact through high annealing and two-dimensional electron gas.Grid 3 and 41,42 formation Schottky contacts, can Effective Regulation plasma wave resonant frequency by adjustment grid voltage.
Further say, the manufacture craft of the present embodiment comprises following concrete steps:
(1) ripe semiconductor growth techniques is utilized to complete the preparation of two-dimensional electron gas substrate;
(2) adopt the technology such as ultraviolet photolithographic and plasma etching to complete mesa-isolated, leave two-dimensional electron gas conductive channel, prepare active area;
(3) source electrode and drain electrode is prepared by technology such as ultraviolet photolithographic, electron beam evaporation, metal-strippings; Source electrode and drain electrode is made to form Ohmic contact through high annealing again;
(4) grid, antenna structure and wave filter is prepared by technology such as ultraviolet photolithographic or electron beam exposure, electron beam evaporation, metal-strippings;
(5) divide packing technique by semiconductor, carry out device package, complete the preparation of Terahertz frequency spectrum detector.
With high electron mobility field effect transistor for basic structure, mutually integrated with the novel butterfly antenna being totally independent of source electrode and grid, and by wave filter, antenna is connected with lead-in wire electrode, make terahertz detector have high spectral resolution and detection sensitivity.The system that this source electrode, drain electrode and antenna are separated, the Terahertz electric field that antenna is strengthened can not weaken because of the dissipation of source electrode and drain lead electrode, external low frequency noise signal also can not enter into raceway groove by lead-in wire electrode, thus effectively reduces device noise, improves detection sensitivity.Additionally by the mode that antenna is connected with lead-in wire electrode by wave filter, effectively can keep the resonance characteristic of antenna self, thus effectively improve detector responsivity and frequency response consistance, can also low-frequency noise signal be isolated, effectively improve detecting device spectral resolution and detection sensitivity.
In addition, by independently butterfly antenna setting, nanometer gate can be integrated in antenna top, thus effectively shorten antenna distance, from coulomb theorem, the quadratic power of electric field intensity same distance is inversely proportional to, and when antenna distance narrows down to nanoscale, the THz wave electric field intensity that antenna strengthens a nearly step improves.The attenuation distance of plasma wave is shorter in addition, and the resonator cavity that this nanometer gate is formed is conducive to exciting of plasma wave and produces, thus effectively improves the resolution of detecting device frequency spectrum and sensitivity.
On the basis of said structure design, the present invention also can adopt multi-grid structure, make grid can more effective adjustment raceway groove two-dimensional electron gas, activated plasma ripple, and give suitable boundary condition, the direction propagation of plasma wave can be realized, be conducive to improving frequency spectrum detector performance further.The grid of the grid and regulation and control concentration that form resonator cavity is symmetrical arranged, and effectively can reduce the impact of non-frequency spectrum detection background signal.
Under THz wave irradiation, open-circuit voltage or short-circuit current signal can be formed at detecting device two ends, and will maximum value be got under certain grid voltage, we can obtain plasma wave resonant frequency corresponding to this grid voltage by water wave theory of diving, thus obtain incident Terahertz wave frequency.
In sum, the present invention is by realizing the frequency spectrum detection of Terahertz to the special gate design of high electron mobility field effect transistor.Again by the Terahertz antenna structure of the suitable dimension independent of source electrode and drain electrode, effective enhancing Terahertz electric field, thus really realize at a high speed, the preparation of efficient, highly sensitive, low noise, cheap Terahertz frequency spectrum detector, this will hew out the more wide space of a slice for the application of Terahertz.
It should be noted that, in this article, the such as relational terms of first and second grades and so on is only used for an entity or operation to separate with another entity or operational zone, and not necessarily requires or imply the relation that there is any this reality between these entities or operation or sequentially.And, term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability, thus make to comprise the process of a series of key element, method, article or equipment and not only comprise those key elements, but also comprise other key elements clearly do not listed, or also comprise by the intrinsic key element of this process, method, article or equipment.When not more restrictions, the key element limited by statement " comprising ... ", and be not precluded within process, method, article or the equipment comprising described key element and also there is other identical element.
The above is only the embodiment of the application; it should be pointed out that for those skilled in the art, under the prerequisite not departing from the application's principle; can also make some improvements and modifications, these improvements and modifications also should be considered as the protection domain of the application.
Claims (5)
1. a THz wave frequency spectrum detector, take High Electron Mobility Transistor as basic structure, it is characterized in that: the raceway groove place of described High Electron Mobility Transistor is provided with antenna, to produce Terahertz electric field, described antenna and the integrated setting of High Electron Mobility Transistor, and with the source electrode of High Electron Mobility Transistor and the independence completely that drain, described antenna comprises first day line and the second antenna, the first described antenna is connected to first grid, to regulate two-dimensional electron gas; The second described antenna is connected to second grid and the 3rd grid, and to form two-dimentional plasma wave resonator cavity, described second grid and the 3rd grid lay respectively at the both sides of described first grid.
2. THz wave frequency spectrum detector according to claim 1, is characterized in that: described antenna is connected to lead-in wire electrode by terahertz filter.
3. THz wave frequency spectrum detector according to claim 2, is characterized in that: described terahertz filter is the metal nanometer line of inflection.
4. THz wave frequency spectrum detector according to claim 1, is characterized in that: on described High Electron Mobility Transistor and the integrated substrate epitaxial sheet being arranged at band two-dimensional electron gas substrate of antenna.
5. THz wave frequency spectrum detector according to claim 1, it is characterized in that: described two-dimensional electron gas substrate comprises the separation layer, epitaxial loayer and the substrate layer that stack gradually from top to bottom, the source electrode of described high electron mobility field effect transistor, drain and gate and antenna be arranged on be formed at substrate epitaxial sheet active area on, and this source electrode and drain electrode are by being arranged on the two-dimensional electron gas expanding channels in substrate layer.
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| CN108023263A (en) * | 2017-11-20 | 2018-05-11 | 中国工程物理研究院电子工程研究所 | A kind of magnetic field and the terahertz pulse generator of regulating and controlling voltage |
| CN112531071A (en) * | 2020-12-18 | 2021-03-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | Terahertz field effect detector based on thin barrier material and design method thereof |
| CN113314852A (en) * | 2021-05-25 | 2021-08-27 | 上海交通大学 | Plasma modulator and electromagnetic wave vector microscopic sensor |
| CN113639866A (en) * | 2021-08-25 | 2021-11-12 | 中国科学院苏州纳米技术与纳米仿生研究所 | Field-effect wide-spectrum detector |
| CN114719967A (en) * | 2021-01-04 | 2022-07-08 | 中国科学院沈阳自动化研究所 | Terahertz wave detector based on field effect transistor and double-antenna structure |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108023263A (en) * | 2017-11-20 | 2018-05-11 | 中国工程物理研究院电子工程研究所 | A kind of magnetic field and the terahertz pulse generator of regulating and controlling voltage |
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| CN112531071A (en) * | 2020-12-18 | 2021-03-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | Terahertz field effect detector based on thin barrier material and design method thereof |
| CN114719967A (en) * | 2021-01-04 | 2022-07-08 | 中国科学院沈阳自动化研究所 | Terahertz wave detector based on field effect transistor and double-antenna structure |
| CN113314852A (en) * | 2021-05-25 | 2021-08-27 | 上海交通大学 | Plasma modulator and electromagnetic wave vector microscopic sensor |
| CN113639866A (en) * | 2021-08-25 | 2021-11-12 | 中国科学院苏州纳米技术与纳米仿生研究所 | Field-effect wide-spectrum detector |
| CN113639866B (en) * | 2021-08-25 | 2024-05-28 | 中国科学院苏州纳米技术与纳米仿生研究所 | Field effect broad spectrum detector |
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