CN105590986A - Room temperature terahertz detector based on gallium nitride high electron mobility transistor and preparation method thereof - Google Patents
Room temperature terahertz detector based on gallium nitride high electron mobility transistor and preparation method thereof Download PDFInfo
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- CN105590986A CN105590986A CN201610149334.4A CN201610149334A CN105590986A CN 105590986 A CN105590986 A CN 105590986A CN 201610149334 A CN201610149334 A CN 201610149334A CN 105590986 A CN105590986 A CN 105590986A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 35
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 14
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 230000005684 electric field Effects 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 14
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 238000000313 electron-beam-induced deposition Methods 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 3
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 3
- 238000005728 strengthening Methods 0.000 claims description 3
- 238000001514 detection method Methods 0.000 abstract description 7
- 230000008878 coupling Effects 0.000 abstract description 2
- 238000010168 coupling process Methods 0.000 abstract description 2
- 238000005859 coupling reaction Methods 0.000 abstract description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- IWBUYGUPYWKAMK-UHFFFAOYSA-N [AlH3].[N] Chemical compound [AlH3].[N] IWBUYGUPYWKAMK-UHFFFAOYSA-N 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- -1 cushion Chemical compound 0.000 description 1
- 238000002059 diagnostic imaging Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000009659 non-destructive testing Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1856—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising nitride compounds, e.g. GaN
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention relates to the terahertz signal detection field, and especially to a room temperature terahertz detector based on a gallium nitride high electron mobility transistor and a preparation method thereof. The detector includes a gallium nitride high electron mobility transistor provided with a source electrode, a gate electrode, and a drain electrode, and also includes a nanometer antenna. The nanometer antenna is located between the source electrode and the drain electrode of the gallium nitride high electron mobility transistor and at one side of the gate electrode. The nanometer antenna is arranged at a distance from the gate electrode. One side of the gate electrode, adjacent to the nanometer antenna, is provided with a protrusion array having the corresponding shape and interval as the nanometer antenna. The protrusion array and the nanometer antenna form a tip-to-tip structure for increasing a terahertz electric field. The room temperature terahertz detector based on the gallium nitride high electron mobility transistor employs a unique nanometer antenna structure and combines a special gate electrode structure, effectively improves the coupling efficiency of the detector to a terahertz electromagnetic wave, and realizes the detection of the room temperature of the terahertz electromagnetic wave, and the high sensitive and low equivalent noise power.
Description
Technical field
The present invention relates to terahertz signal field of detecting, relate in particular to a kind of based on the high electricity of gallium nitrideTransistorized room temperature terahertz detector of transport factor and preparation method thereof.
Background technology
Terahertz typically refers to the electricity of frequency (100GHz-10THz) between infrared and microwaveMagnetic wave. Terahertz electromagnetic wave has safety,, spatial resolution strong to nonpolarity medium penetration powerWith temporal resolution high, thus it Non-Destructive Testing, medical imaging, safety inspection,There is important application prospect the material list deep space communication aspect of seeking peace. The terahertz detection using at presentDevice or need low-temperature working, or response speed is slow, responsiveness is low, or bulky. Therefore,Urgent need develop a kind of working and room temperature, volume little, can be integrated, fast response time, responsivenessHigh terahertz detector. 2002, the people such as Knap were utilizing field-effect transistor (FET)Realize off-resonance formula terahertz detection (with reference to KnapW, DengY, etal.JournalofAppliedPhysics, 2002,91 (11): 9346-9353.). But this detector spiritSensitivity is low, and noise equivalent power is high, and detector performance also needs further raising.
Summary of the invention
For addressing the above problem, the present invention proposes the structure of existing terahertz detector to changeEnter, increase nano-antenna, and the structure of nano-antenna and grid is echoed mutually, receive to strengthenThe field effect of rice antenna, improves detector sensitivity.
For achieving the above object, the technical solution used in the present invention is as follows:
A room temperature terahertz detector based on GaN high electron mobility transistor, comprisesGaN high electron mobility transistor, GaN high electron mobility transistor be provided with source electrode,Grid and drain electrode, also comprise a nano-antenna, and nano-antenna is positioned at GaN high electron mobilityTransistorized source electrode and drain electrode between, grid one side and and grid between keep at a certain distance away; GridThe utmost point is provided with the prominent of with nano-antenna corresponding shape and interval in a side adjacent with nano-antennaPlay array, array of protrusions and nano-antenna form tip to tip structure, for strengthening Terahertz electric field.
The present invention is based on the original structure of GaN high electron mobility transistor, in source electrode and leakageNano-antenna is set between the utmost point, terahertz electromagnetic wave can be coupled to GaN high electron mobilityIn transistorized Two-dimensional electron gas channel, improve the sensitivity of terahertz detector; Simultaneously withOn the adjacent grid of nano-antenna, raised structures is set, forms tip to tip structure with nano-antenna,Can effectively strengthen the Terahertz electric-field intensity producing in Two-dimensional electron gas channel, to improve detectionThe responsiveness of device. Nano-antenna only, in grid one side setting, does not form symmetry, avoids symmetrical junctionThe signal that structure produces is cancelled out each other.
Preferably, described nano-antenna adopts rectangle dipole antenna. Nano-antenna length modelEnclose for 100nm-1000nm, width is 100nm, and spacing is 100nm-1000nm.
Preferably, described nano-antenna adopts triangle antenna. Nano-antenna length is100nm-1000nm, tip angle is 30 °-60 °.
Further, the 50nm-300nm of being separated by between the projection on described nano-antenna and grid.The present invention, before this by grid side, nano-antenna being set, strengthens internal field, then logical againCross and on grid, increase raised structures, form tip to tip structure with nano-antenna, further strengthenElectric field effect.
Further, the projection length scope on grid is 100nm-300nm, and width is 100nm.
Further, GaN high electron mobility transistor and nano-antenna are integrated in gallium nitride twoOn dimensional electron gas base epitaxial wafer. On epitaxial wafer, there is layer-of-substrate silicon, cushion, gallium nitride raceway grooveLayer and gallium aluminium nitrogen layer. Source electrode and drain electrode form ohm by metal Ti/Al/Ni/Au and gallium nitrideContact and be connected with gallium nitride raceway groove. Nano-antenna adopts metal Ti/Au to make.
The preparation method of above-mentioned room temperature terahertz detector comprises the following steps:
(1) utilize Metalorganic chemical vapor deposition method to complete the preparation of two-dimensional electron gas substrate;
(2) adopt ICP lithographic technique to carry out active area isolation, produce two-dimensional electron gas passage;
(3) by ultraviolet light photoetching technique, electron beam deposition and metal lift-off process, havingSource electrode and drain electrode are prepared in source region, then carry out high annealing source electrode and drain electrode formation ohm are connectTouch;
(4) use PMMA as photoresist, through whirl coating, oven dry, electron beam exposure,Metallic deposition and lift-off technology are produced grid and nano-antenna;
(5) device is encapsulated, complete the preparation of room temperature terahertz detector.
The present invention passes through to adopt unique nano-antenna structure, and in conjunction with special grid structure, energyThe enough coupling efficiency of detector to terahertz electromagnetic wave that effectively improve, realize terahertz electromagnetic waveRoom temperature, the detection of highly sensitive and low noise equivalent power. By in conjunction with existing microelectronics manufactureTechnology, can make detector height of the present invention integrated with CMOS integrated circuit in, thereby realize tooThe complex apparatus such as hertz imaging array and terahertz camera.
Brief description of the drawings
Fig. 1 is the top view of the embodiment of the present invention;
Fig. 2 is the inside sectional structure schematic diagram of Fig. 1;
Fig. 3 is A part partial enlarged drawing in Fig. 1;
In figure, 1, source electrode, 2, grid, 3, drain electrode, 4, nano-antenna, 5, cap layer, 6,Gallium aluminium nitrogen layer, 7, separate layer, 8, gallium nitride channel layer, 9, cushion, 10, silicon substrateLayer, 11, rectangular protrusions.
Detailed description of the invention
Below in conjunction with drawings and Examples, the present invention is elaborated.
A room temperature terahertz detector based on GaN high electron mobility transistor, as figure1,, shown in 2, comprise a GaN high electron mobility transistor and a nano-antenna 4, bothIntegrated being arranged on gallium nitride two-dimensional electron gas base epitaxial wafer. As shown in Figure 2, this epitaxial wafer fromUnder on be followed successively by layer-of-substrate silicon 10, cushion 9, gallium nitride channel layer 8, separate layer 7,Gallium aluminium nitrogen layer 6 and cap layer 5. Source electrode 1 and drain electrode 3 are by metal Ti/Al/Ni/Au and gallium nitrideForm Ohmic contact and be connected with gallium nitride raceway groove. Grid 2 source electrode and drain electrode betweenTwo-dimensional electron gas channel top, nano-antenna 4 is between source electrode 1 and drain electrode 3, only at gridThe utmost point 2 one side settings, and between grid, have certain intervals. Nano-antenna 4 adopts metal Ti/AuMake, adopt rectangle dipole antenna, the long 1000nm of nano-antenna, wide 100nm, each other itBetween interval 1000nm. Grid is provided with rectangular protrusions 11, square in a side adjacent with nano-antennaThe long 250nm of shape projection, wide 100nm, interval 1000nm between each rectangular protrusions, rectangle is prominentPlay 11 outward flanges and nano-antenna 4 inward flanges at a distance of 200nm, rectangular protrusions 11 is arranged side by sideForm array of protrusions, array of protrusions and nano-antenna are tip to tip structure, for strengthening TerahertzElectric field.
The preparation process of above-mentioned room temperature terahertz detector is as follows:
(1) utilize Metalorganic chemical vapor deposition method to complete the preparation of two-dimensional electron gas substrate.
(2) adopt ICP lithographic technique (inductively coupled plasma lithographic technique) to haveSource region isolation, produces two-dimensional electron gas passage.
(3) by ultraviolet light photoetching technique, electron beam deposition and metal lift-off process, havingSource electrode and drain electrode are prepared in source region, then carry out high annealing source electrode and drain electrode formation ohm are connectTouch.
(4) use PMMA as photoresist, through whirl coating, oven dry, electron beam exposure, goldGenusization deposition and lift-off technology are produced grid and nano-antenna.
(5) device is encapsulated, complete the preparation of room temperature terahertz detector.
When work, on HEMT grid, be biased voltage attached to threshold voltageClosely, terahertz signal is coupled to two-dimensional electron gas passage by nano-antenna, by overdamp etc.The non-linear process of gas ions resonance is direct current signal by AC signal rectification, then reads from drain electrodeGo out signal, survey thereby realize terahertz signal. At integrated nanometer tip to tip sky, raceway groove place toe-inStructure, effectively to strengthen THz wave electric field. Detector can produce photoelectricity under THz wave irradiatesPress (or photoelectric current), thereby realize at a high speed, the detection of highly sensitive, low noise room temperature Terahertz.In addition, gallium nitride has good high-temperature stability, and experimental result shows that the present invention can beUnder the high temperature of 200 degrees Celsius, work, effectively carry out terahertz detection.
Claims (9)
1. the room temperature terahertz detector based on GaN high electron mobility transistor, comprisesGaN high electron mobility transistor, GaN high electron mobility transistor is provided with sourceThe utmost point (1), grid (2) and drain electrode (3), is characterized in that: also comprise a nano-antenna(4), nano-antenna (4) is positioned at the source electrode (1) of GaN high electron mobility transistorAnd drain electrode (3) between, grid (2) one sides and and grid between keep at a certain distance away;Grid is provided with corresponding shape and interval with nano-antenna in a side adjacent with nano-antennaArray of protrusions, array of protrusions and nano-antenna form tip to tip structure, for strengthening tooHertz electric field.
2. the room temperature based on GaN high electron mobility transistor according to claim 1 tooHertz detector, is characterized in that: described nano-antenna (4) adopts rectangle dipoleAntenna.
3. the room temperature based on GaN high electron mobility transistor according to claim 2 tooHertz detector, is characterized in that: nano-antenna (4) length range is100nm-1000nm, width is 100nm, spacing is 100nm-1000nm.
4. the room temperature based on GaN high electron mobility transistor according to claim 1 tooHertz detector, is characterized in that: described nano-antenna (4) adopts triangle antenna.
5. the room temperature based on GaN high electron mobility transistor according to claim 4 tooHertz detector, is characterized in that: described nano-antenna (4) length is100nm-1000nm, tip angle scope is 30 °-60 °.
6. the room temperature based on GaN high electron mobility transistor according to claim 1 tooHertz detector, is characterized in that: between the projection on described nano-antenna and gridThe 50nm-300nm of being separated by.
7. the room temperature based on GaN high electron mobility transistor according to claim 3 tooHertz detector, is characterized in that: the projection length scope on grid is100nm-300nm, width is 100nm.
According to described in claim 1 to 7 any one based on GaN high electron mobility crystalThe room temperature terahertz detector of pipe, is characterized in that: GaN high electron mobility crystalPipe and nano-antenna are integrated on gallium nitride two-dimensional electron gas base epitaxial wafer.
9. the room temperature based on GaN high electron mobility transistor according to claim 8 tooThe preparation method of hertz detector, is characterized in that comprising the following steps:
(1) utilize Metalorganic chemical vapor deposition method to complete the preparation of two-dimensional electron gas substrate;
(2) adopt ICP lithographic technique to carry out active area isolation, produce two-dimensional electron gas passage;
(3) by ultraviolet light photoetching technique, electron beam deposition and metal lift-off process, havingSource electrode and drain electrode are prepared in source region, then carry out high annealing source electrode and drain electrode formation ohm are connectTouch;
(4) use PMMA as photoresist, through whirl coating, oven dry, electron beam exposure,Metallic deposition and lift-off technology are produced grid and nano-antenna;
(5) device is encapsulated, complete the preparation of room temperature terahertz detector.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107994085A (en) * | 2017-11-24 | 2018-05-04 | 四川省天月光电科技有限公司 | A kind of terahertz detector structure |
| CN108827902A (en) * | 2018-06-22 | 2018-11-16 | 中国计量大学 | A kind of Terahertz fingerprint detection sensitivity Enhancement Method based on nano-antenna structure |
| JP2019075464A (en) * | 2017-10-16 | 2019-05-16 | 株式会社豊田中央研究所 | Transistor type photodetector |
| CN113484352A (en) * | 2021-06-23 | 2021-10-08 | 北京大学 | Terahertz detector based on second-class outskirt semimetal material |
| CN114279998A (en) * | 2021-12-29 | 2022-04-05 | 福州大学 | Liquid enhanced sensing system and method based on quasi-square-shaped terahertz metamaterial |
| CN114864737A (en) * | 2022-04-13 | 2022-08-05 | 西安电子科技大学广州研究院 | Terahertz detector based on GaN MIS-HEMT structure and preparation method thereof |
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| CN104091837A (en) * | 2014-06-13 | 2014-10-08 | 南京大学 | Terahertz detector based on optical antenna |
| US9105791B1 (en) * | 2013-09-16 | 2015-08-11 | Sandia Corporation | Tunable plasmonic crystal |
| CN104916732A (en) * | 2014-03-12 | 2015-09-16 | 中国科学院苏州纳米技术与纳米仿生研究所 | Graphene terahertz wave detector and manufacturing method thereof |
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| US5914497A (en) * | 1997-07-14 | 1999-06-22 | Sherwin; Mark | Tunable antenna-coupled intersubband terahertz (TACIT) detector |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019075464A (en) * | 2017-10-16 | 2019-05-16 | 株式会社豊田中央研究所 | Transistor type photodetector |
| CN107994085A (en) * | 2017-11-24 | 2018-05-04 | 四川省天月光电科技有限公司 | A kind of terahertz detector structure |
| CN108827902A (en) * | 2018-06-22 | 2018-11-16 | 中国计量大学 | A kind of Terahertz fingerprint detection sensitivity Enhancement Method based on nano-antenna structure |
| CN113484352A (en) * | 2021-06-23 | 2021-10-08 | 北京大学 | Terahertz detector based on second-class outskirt semimetal material |
| CN114279998A (en) * | 2021-12-29 | 2022-04-05 | 福州大学 | Liquid enhanced sensing system and method based on quasi-square-shaped terahertz metamaterial |
| CN114279998B (en) * | 2021-12-29 | 2024-01-09 | 福州大学 | Liquid enhancement sensing system and method based on quasi-Chinese character 'Hui' type terahertz metamaterial |
| CN114864737A (en) * | 2022-04-13 | 2022-08-05 | 西安电子科技大学广州研究院 | Terahertz detector based on GaN MIS-HEMT structure and preparation method thereof |
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