CN113484352A - Terahertz detector based on second-class outskirt semimetal material - Google Patents
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
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Abstract
The invention discloses a terahertz detector based on a second type of exol semimetal material, which adopts the second type of exol semimetal as a terahertz detection material, does not need external bias voltage, and can have higher responsiveness and faster response speed at room temperature. The terahertz detector has wide application prospect, and can be applied to various fields such as terahertz imaging, terahertz security inspection, biomedicine, terahertz radar and the like. Particularly, the terahertz detector can generate higher photocurrent response without providing bias voltage, and the dark current is very low; and the device does not need to provide a low-temperature environment (such as liquid helium cooling) and can be used at room temperature, which greatly contributes to the miniaturization and the economy of the detector.
Description
Technical Field
The invention relates to a terahertz detector, in particular to a terahertz detector based on a second type of exol semimetal material.
Background
The terahertz detector is a device capable of converting terahertz signals into electric signals, and the terahertz detection technology has wide application in the aspects of radar detection, medical imaging, safety inspection, quality control and the like, and is a key technology in the terahertz field. The existing technical route of terahertz detection is difficult to realize rapid, miniaturized, uncooled and high-sensitivity terahertz detection at the same time. For example, detectors based on thermal effect, such as vanadium dioxide-based detectors and golay-box terahertz detectors, have a slow response speed, which is about 10 to 400 Hz. However, a terahertz detector using a superconductor, such as a superconducting thermionic bolometer, needs to be cooled to 4K by liquid helium, and cannot work at room temperature. In addition, for the terahertz detection technology used in scientific research, a series of technologies such as ultrafast electro-optical sampling require ultrafast laser, the volume of the detection equipment, and the operating environment and cost thereof are limited. Therefore, the use of these terahertz detectors is limited to various degrees.
In recent years, a new class of peculiar topological quantum materials has been discovered, which have a special energy band structure and have a cross point of two energy bands, and the low-energy excitation near the cross point can be described by dirac equation or exol equation in particle physics, so that the material system is called dirac semimetal or exol semimetal. The semimetal material has high mobility, so that the collection of carriers is facilitated, and meanwhile, the carrier relaxation time of the semimetal material is short, so that the semimetal material has high response speed. Besides, the exotic semimetals have many non-trivial topological properties, and these novel quantum effects will bring many unexpected new functions to these semimetal materials.
Disclosure of Invention
Aiming at the problems in the prior art route, the invention provides a terahertz detector based on a second type of exol semimetal material and a detection method thereof.
One aim of the invention is to provide a terahertz detector based on a second type of semimetal material.
The terahertz detector based on the second type of the epi-semimetal material comprises a substrate, a terahertz antenna, a second type of the epi-semimetal sheet and a protective layer, wherein: the terahertz antenna is arranged on the surface of the substrate and consists of two parts which are not communicated, and the tip ends of the two parts are oppositely arranged; the second type of the semifoil is connected with two tip ends of the terahertz antenna to form ohmic contact; the protective layer completely covers the second type of semifoil.
When the terahertz detector is manufactured, firstly, a terahertz antenna is arranged on the surface of a substrate, then a second type of the sequin half metal sheet is transferred to the terahertz antenna, and the second type of the sequin half metal sheet is connected with two tip ends of the terahertz antenna to form ohmic contact; and covering a protective layer above the second type of the sequin, wherein the horizontal size of the protective layer is larger than that of the second type of the sequin so as to ensure that the protective layer completely covers the second type of the sequin. And finally, connecting two ends of the terahertz antenna to an external detection circuit, so that the terahertz signal can be detected.
The substrate should be a substrate with high resistivity, and preferably a high-resistivity silicon substrate with a surface covered by a silicon dioxide insulating layer, wherein the substrate should be selected to ensure that the sample and the antenna can be tightly combined with the substrate, and the resistivity of the high-resistivity silicon substrate is 102～104Ω·cm。
Such as a bow-tie shaped planar antenna, a log periodic antenna, etc. The antenna structure is generally formed by two symmetrical parts which are not communicated, the tips of the two parts of the antenna are oppositely arranged, the distance between the two parts of the antenna is preferably within 20 mu m, and the wider parts of the two parts of the antenna are connected with an external circuit through conducting wires. The terahertz antenna structure is preferably formed by two layers of metals, the bottom layer is a transition metal layer, and a conductive metal layer is formed on the surface of the transition metal layer. The transition metal layer is a transition layer and plays a role in lattice adaptation, so that the conductive metal layer can be more firmly adhered to the surface of the substrate. The material of the transition metal layer should be selected from materials with strong bonding force with the substrate, such as titanium, chromium and the like, and the material of the conductive metal layer should be selected from materials with low resistivity and good bonding force with the transition metal layer, such as gold.
The second type of semimetal sheet is made of materials such as tungsten ditelluride, molybdenum ditelluride, tantalum iridium tellurium and the like, the thickness of the second type of semimetal sheet is preferably within 300nm, and the horizontal size of the second type of semimetal sheet is required to ensure that the second type of semimetal sheet can form ohmic contact with the tips of the two parts of the terahertz antenna at the same time.
The protective layer is used for protecting the second type of the sequin semimetal material from being oxidized by the outside, the area of the protective layer is ensured to be capable of completely covering the second type of the sequin semimetal material, the protective layer is made of a material with high transmittance in the THz wave band, such as hexagonal boron nitride, and the thickness of the protective layer is preferably within 50 nm.
Detection principle:
when terahertz waves irradiate on the terahertz detector, most energy is collected by the terahertz antenna and is gathered at two tip ends connected with the second type of the half metal sheet, so that a terahertz electric field is enhanced at the two tip ends. Under the action of an external terahertz electric field, carriers in the second type of exol semimetal material can migrate, and the Fermi surface deviates from the distribution of an equilibrium state without the terahertz electric field; meanwhile, the migration caused by the external terahertz electric field can be inhibited by the scattering action between carriers and between the carriers and impurities in the second type of the exol semimetal material. After a very fast relaxation time, the distribution of the carriers reaches a steady state. Since the lattice structure of the second type of the exol semimetal has no central inversion symmetry, the scattering potential in the second type of the exol semimetal also has no central inversion symmetry, so that the distribution of the stable fermi surface has asymmetry, and a non-zero photocurrent response is generated. The intensity information of the terahertz signal can be obtained by detecting the magnitude of the photocurrent through an external measuring circuit.
The external detection circuit includes: a current preamplifier, an oscilloscope and a phase-locked amplifier; one part of the two parts of the terahertz antenna is grounded through a lead, the other part of the terahertz antenna is connected with the current preamplifier through the lead, and the photocurrent detected by the terahertz detector is amplified through the current preamplifier; the current preamplifier is connected with the oscilloscope, and the oscilloscope is used for detecting the amplified photocurrent signal. If the photocurrent signal is relatively small, a phase-locked amplifier is further used, the signal input end of the phase-locked amplifier is connected with a current preamplifier, and the reference signal input end is connected with a terahertz source. The phase-locked amplifier further amplifies and extracts the photocurrent amplified by the current preamplifier based on the modulation frequency of the terahertz source, and the detected signal can be directly read out from the phase-locked amplifier.
The invention also provides a detection method of the terahertz detector based on the second type of the exol semimetal material, which comprises the following steps:
1) one part of the two parts of the terahertz antenna of the terahertz detector is grounded through a lead, and the other part of the terahertz antenna is connected with an external detection circuit through a lead;
2) when terahertz waves irradiate on the terahertz detector, most energy is collected by the terahertz antenna and is gathered at two tip ends connected with the second type of the sequin, so that a terahertz electric field is enhanced at the two tip ends, and nonzero photocurrent response is generated inside the second type of the sequin;
3) the magnitude of the photocurrent is detected by an external detection circuit, so that the intensity information of the terahertz wave is obtained.
The invention has the advantages that:
the terahertz detector adopts the second type of the exol semimetal material as the terahertz detection material, does not need external bias, and can have higher responsiveness and higher response speed at room temperature; the terahertz detector has wide application prospect, and can be applied to various fields such as terahertz imaging, terahertz security inspection, biomedicine, terahertz radar and the like; in addition, it is particularly pointed out that the terahertz detector based on the material can generate a high photocurrent response without providing a bias voltage, the dark current is very low, and the terahertz detector based on the material cannot apply the bias voltage, otherwise, a large background current is generated, and large noise is brought. The terahertz detector based on the material does not need to provide a low-temperature environment (such as liquid helium cooling) and can be used at room temperature, and the terahertz detector greatly contributes to the miniaturization and the economy of the detector.
Drawings
Fig. 1 is a schematic structural diagram of an embodiment of a terahertz detector based on a second type of semimetal material in the present invention, wherein: the terahertz wave antenna comprises a 1-substrate, a 2-bowtie-shaped terahertz antenna, a 3-ditelluride tungsten sheet and a 4-hexagonal boron nitride protective layer.
Fig. 2 is a specific structural parameter diagram of a terahertz antenna of an embodiment of a terahertz detector based on a second type of semimetal material according to the present invention.
Fig. 3 is a structural block diagram of an embodiment of an external detection circuit of a terahertz detector based on a second type of peril semimetal material, in which: 5-terahertz source, 6-terahertz detector, 7-preamplifier, 8-phase-locked amplifier and 9-oscilloscope.
Fig. 4 is a graph of the result of the photocurrent detected by an embodiment of a terahertz detector based on a second type of semimetallic material according to the present invention, wherein: (a) the incident terahertz frequency is 0.026THz, and the power is 1.96 mW; (b) the incident terahertz frequency is 0.10THz, and the power is 49.1 muW; (c) the incident terahertz frequency is 0.26THz, and the power is 7.85 muW.
Fig. 5 is a graph of the results of photocurrent generated by a terahertz detector based on a second type of peril semimetal material at different modulation frequencies of incident terahertz according to the present invention, wherein: (a) the incident terahertz frequency is 0.026THz, and the response speed obtained by fitting is 20 mus; (b) the incident terahertz frequency is 0.10THz, and the response speed obtained by fitting is 20 mus; (c) the incident terahertz frequency is 0.26THz, and the response speed obtained by fitting is 21 mus.
Fig. 6 is a graph showing the result of photocurrent generated by a terahertz detector based on a second type of semimetal material under different incident power according to the present invention.
Detailed Description
The invention will be further elucidated by means of specific embodiments in the following with reference to the drawing. As an embodiment of the invention, the second type of the field semimetal material is tungsten ditelluride, and the terahertz antenna is a bow-tie antenna. It should be noted that the second type of the semimetal material and the antenna structure provided in this embodiment are only used as a specific embodiment to illustrate the basic idea of the present invention, and the present invention can also be implemented or applied by selecting other second type of the semimetal material and different antenna structures.
As shown in fig. 1, the terahertz detector based on the second type of the semimetal material of the present embodiment includes: substrate 1, bowtie shapeThe terahertz antenna comprises a terahertz antenna 2, a second type of Peltier half-metal material tungsten ditelluride sheet 3 and a hexagonal boron nitride protective layer 4; wherein, a bowtie-shaped terahertz antenna 2 is arranged on the surface of the substrate 1 with the silicon dioxide layer; arranging a tungsten ditelluride sheet 3 in the middle of the bow-tie-shaped terahertz antenna 2, and enabling the tungsten ditelluride sheet 3 to be simultaneously contacted with two tips of the bow-tie-shaped terahertz antenna 2; covering a hexagonal boron nitride protective layer 4 above the tungsten ditelluride thin sheet 3; one end of the outer side of the bowknot-shaped terahertz antenna 2 is grounded, and the other end of the outer side of the bowknot-shaped terahertz antenna is connected to an external detection circuit. In the present embodiment, the substrate 1 includes a high-resistance silicon layer having a resistivity of 10 and a silicon dioxide layer thereon2-104Omega cm, the thickness is 525 μm, and the thickness of the silicon dioxide layer is 300 nm; the bow-tie-shaped terahertz antenna 2 comprises two layers, wherein the first transition metal layer below the first transition metal layer is Ti and is 10nm thick, and the second conductive metal layer is Au and is 45nm thick.
As shown in fig. 2, the specific structural parameters of the bow-tie-shaped thz antenna 2 are as follows: w1＝240μm,W2＝4μm，L1＝L280 μm and an antenna tip spacing d of 6 μm.
As shown in fig. 3, the detection circuit includes: a terahertz source 5, a terahertz detector 6 of the invention, a preamplifier 7, a lock-in amplifier 8 and an oscilloscope 9; the pre-amplifier 7 amplifies the photocurrent; if the signal is strong, the photocurrent response can be directly measured from the oscilloscope 9; if the signal is weak, the photo current amplified by the preamplifier 7 is further extracted using the lock-in amplifier 8 based on the modulation frequency of the terahertz source 5.
Fig. 4 shows a photocurrent response diagram for the detection of terahertz at different frequencies using the terahertz detector of the present invention. As shown in FIG. 4, the three incident terahertz frequencies from top to bottom are 0.026THz (power 1.96mW), 0.10THz (power 49.1 μ W) and 0.26THz (power 7.85 μ W), respectively. The photocurrent response is a oscillogram recorded in an oscilloscope and can be obtained by calculation, the responsivity of the terahertz detector reaches 1.27mA/W at a 0.026THz waveband, reaches 5.44mA/W at a 0.10THz waveband and reaches 1.52mA/W at a 0.26THz waveband. This shows that the terahertz detector of the invention can be applied to the detection of the band from microwave to terahertz, and has higher sensitivity. It should be noted that the terahertz detector based on the material can generate a relatively high photocurrent response without providing a bias voltage, and the dark current is very low, and the terahertz detector based on the material can be used at room temperature without providing a low-temperature environment (such as liquid nitrogen cooling), which greatly contributes to the miniaturization and the economy of the detector.
Fig. 5 shows a graph of the results of photocurrents generated with different modulation frequencies of incident terahertz using the terahertz detector of the present invention. The modulation signal enables the terahertz source to periodically output terahertz waves, and when the modulation frequency is increased, the absolute time of outputting the terahertz waves in each period is shortened. Because the detector generates a photocurrent signal and has response time, when the modulation frequency is continuously increased, the ratio of the rising process and the falling process of the signal to the whole signal is increased because the response time is basically kept unchanged, and the signal read by the phase-locked amplifier is integrated in a period, so that the signal detected in the phase-locked amplifier is reduced. The response speed of the terahertz detector can be obtained by fitting the relationship between the signal in the lock-in amplifier and the modulation frequency. As shown in fig. 5, the three incident THz frequencies from top to bottom are 0.026THz (response speed obtained by fitting is 20 μ s), 0.10THz (response speed obtained by fitting is 20 μ s), and 0.26THz (response speed obtained by fitting is 21 μ s), respectively. This shows that the terahertz detector of the invention has a faster response speed in the detected wave band.
Fig. 6 shows a schematic diagram of photocurrent response generated by the terahertz detector of the present invention under different incident power conditions. As shown in fig. 6, under the irradiation of 0.026THz, the photocurrent response of the terahertz detector increases linearly with the increase of incident power. The linear response is very important in the application of accurately detecting the terahertz intensity in the fields of scientific research and the like.
Finally, it is noted that the disclosed embodiments are intended to aid in further understanding of the invention, but those skilled in the art will appreciate that: various substitutions and modifications are possible without departing from the spirit and scope of the invention and the appended claims. Therefore, the invention should not be limited to the embodiments disclosed, but the scope of the invention is defined by the appended claims.
Claims (10)
1. A terahertz detector comprises a substrate, a terahertz antenna, a second type of semimetal sheet and a protective layer, wherein: the terahertz antenna is arranged on the surface of the substrate and consists of two parts which are not communicated, and the tip ends of the two parts are oppositely arranged; the second type of the semifoil is connected with two tip ends of the terahertz antenna to form ohmic contact; the protective layer completely covers the second type of semifoil.
2. The terahertz detector of claim 1, wherein the substrate is a high-resistance silicon substrate with a surface covered with a silicon dioxide insulating layer.
3. The terahertz detector of claim 1, wherein the terahertz antenna is a bow-tie shaped planar antenna or a log-periodic antenna.
4. The terahertz detector of claim 1, wherein the terahertz antenna is spaced at the tips of the two parts within 20 μm.
5. The terahertz detector of claim 1, wherein the terahertz antenna is composed of two layers of metals, the bottom layer is a transition metal layer, and the surface of the transition metal layer is a conductive metal layer.
6. The terahertz detector of claim 1, wherein the second type of semimetal foil is of a material selected from the group consisting of tungsten ditelluride, molybdenum ditelluride and iridium telluride, and has a thickness within 300 nm.
7. The terahertz detector of claim 1, wherein the protective layer is hexagonal boron nitride and has a thickness within 50 nm.
8. A method for detecting terahertz waves by using the terahertz detector as claimed in any one of claims 1 to 7, comprising the following steps:
1) one part of the two parts of the terahertz antenna of the terahertz detector is grounded through a lead, and the other part of the terahertz antenna is connected with an external detection circuit through a lead;
2) when terahertz waves irradiate on the terahertz detector, the energy of the terahertz waves is collected by the terahertz antenna and is converged at two tip ends of the antenna connected with the second type of the sequin, so that a terahertz electric field is enhanced at the two tip ends, and nonzero photocurrent response is generated inside the second type of the sequin;
3) and detecting the magnitude of the photoelectric current through an external detection circuit to obtain the intensity information of the terahertz wave.
9. The method as claimed in claim 8, wherein the external detection circuit comprises a current preamplifier and an oscilloscope, wherein the current preamplifier is connected with the terahertz antenna, and the photocurrent detected by the terahertz detector is amplified through the current preamplifier; the current preamplifier is connected with an oscilloscope, and the oscilloscope is used for detecting the amplified photocurrent signal.
10. The method of claim 9, wherein the external detection circuit further comprises a lock-in amplifier, a signal input terminal of the lock-in amplifier is connected with the current preamplifier, a reference signal input terminal is connected with the terahertz source to be measured; the phase-locked amplifier further amplifies and extracts the photocurrent amplified by the current preamplifier based on the modulation frequency of the terahertz source.
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