CN108417662B - Gallium nitride-based radiation detector with signal amplification function and preparation method thereof - Google Patents
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 105
- 230000005855 radiation Effects 0.000 title claims abstract description 36
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 230000003321 amplification Effects 0.000 title claims abstract description 24
- 238000003199 nucleic acid amplification method Methods 0.000 title claims abstract description 24
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 230000004888 barrier function Effects 0.000 claims abstract description 46
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 4
- 229910001425 magnesium ion Inorganic materials 0.000 claims description 3
- 230000004044 response Effects 0.000 abstract description 7
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000001514 detection method Methods 0.000 description 10
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004992 fission Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
- H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
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Abstract
The invention discloses a gallium nitride-based radiation detector with a signal amplification function and a preparation method thereof, belonging to the technical field of semiconductor devices. The invention relates to a radiation detector, which comprises: a GaN-based PN junction and a high electron mobility transistor; the GaN-based PN junction comprises a back electrode, a P-GaN layer and an n layer which are sequentially laminated ‑ -a GaN drift layer, said n ‑ -a GaN drift layer for absorbing radiation to generate electron-hole pairs; channel layer and n of the high electron mobility transistor ‑ The surface of the GaN drift layer remote from the P-GaN layer is electrically connected. The high electron mobility transistor comprises a channel layer, an AlN barrier layer and an AlGaN barrier layer which are sequentially laminated; the channel layer is a GaN channel layer, and the surface far away from the AlN barrier layer and n ‑ -a GaN drift layer electrically connected; the surface of the AlGaN barrier layer far away from the AlN barrier layer is respectively provided with a source electrode, a drain electrode and a grid electrode. The detector realizes the radiation detector with the signal amplifying function, and has the advantages of high sensitivity, high response speed, high signal to noise ratio and simple and reliable preparation process.
Description
Technical Field
The invention relates to the field of semiconductor devices, in particular to a gallium nitride-based radiation detector with a signal amplification function and a preparation method thereof.
Background
The gallium nitride material is a direct band gap semiconductor, has the characteristics of large forbidden band width, high electron mobility, high breakdown field intensity and the like, is an ideal radiation-resistant and quick-response ray detection material at present, and has wide application prospect in the fields of cosmic ray detection, high-energy acceleration particle collision product detection, nuclear fission and nuclear fusion radiation detection, medical diagnosis, industrial detection and the like.
High sensitivity, low noise and fast response are three important indicators of radiation detectors. The current ray detection system mostly adopts a mode of cascade connection of a detection device and a signal amplification circuit, and comprises a charge sensitive preamplifier, a spectrometer amplifier and the like. Because the signal amplifying circuit is usually realized by a silicon-based integrated circuit, the radiation resistance is weaker, and the signal amplifying circuit and the detection device are in a space isolation state, the problems of low response speed, low sensitivity, poor signal-to-noise ratio and the like of a ray detection system are inevitably caused.
Therefore, there is a need to develop a radiation detection device with a signal amplifying function to overcome the drawbacks of the prior art.
Disclosure of Invention
In order to solve the problems in the prior art, the invention aims to provide a gallium nitride-based radiation detector with a signal amplifying function and a preparation method thereof.
The invention relates to a gallium nitride-based ray detector with a signal amplification function, which comprises the following components: a GaN-based PN junction and a high electron mobility transistor; the GaN-based PN junction comprises a back electrode, a P-GaN layer and an n layer which are sequentially laminated - -a GaN drift layer, said n - -a GaN drift layer for absorbing radiation to generate electron-hole pairs; channel layer and n of the high electron mobility transistor - The surface of the GaN drift layer remote from the P-GaN layer is electrically connected.
Preferably, the high electron mobility transistor includes a channel layer, an AlN barrier layer, and an AlGaN barrier layer stacked in this order; the channel layer is a GaN channel layer, and the surface far away from the AlN barrier layer and n - -a GaN drift layer electrically connected; the surface of the AlGaN barrier layer far away from the AlN barrier layer is respectively provided with a source electrode, a drain electrode and a grid electrode, and the drain electrode and the source electrode are respectively in ohmic contact with the surface of the AlGaN barrier layer; the grid electrode and the surface of the AlGaN barrier layer are in Schottky contact.
Preferably, the P-GaN layer has a doping concentration of 1×10 17 cm -3 Up to 1X 10 19 cm -3 。
Preferably, the thickness of the P-GaN layer is 0.1 μm to 1 μm.
Preferably, said n - The doping concentration of the GaN drift layer is 1×10 15 cm -3 Up to 1X 10 18 cm -3 。
Preferably, said n - The thickness of the GaN drift layer is 10 μm to 1cm.
A method for preparing the gallium nitride-based radiation detector with a signal amplifying function, which is characterized by comprising the following steps:
(1) Preparing a round wafer: at n - Epitaxially growing a GaN channel layer, an AlN barrier layer and an AlGaN barrier layer on the upper surface of the GaN self-supporting substrate to form a heterojunction structure of the high-electron-mobility transistor; from the following surface to n - -thinning the GaN self-supporting substrate and forming a P-GaN layer by epitaxial growth or Mg ion implantation, said n - GaN self-supporting substrate itself forming n - -a GaN drift layer, producing a wafer;
(2) Drain and source are prepared: depositing metal on the upper surface of the AlGaN barrier layer, and forming ohmic contact with the upper surface of the AlGaN barrier layer to obtain a drain electrode and a source electrode;
(3) Preparing a grid: depositing metal on the upper surface of the AlGaN barrier layer, and forming Schottky contact with the upper surface of the AlGaN barrier layer to obtain a grid electrode;
(4) Preparing a back electrode: and depositing metal on the lower surface of the P-GaN layer, and forming ohmic contact with the lower surface of the P-GaN layer to obtain the back electrode.
The gallium nitride-based radiation detector with the signal amplification function and the preparation method thereof have the advantages that after radiation is absorbed, the amplified electric signals are output through the PN junction effect of reverse bias and the high electron mobility transistor. The self signal amplification function is realized, no additional signal amplification circuit is needed, and the device has the advantages of high sensitivity, high response speed and high signal-to-noise ratio. In addition, the invention can be prepared by the conventional preparation process of the gallium nitride-based electronic device, and has simple and reliable preparation process and low preparation cost.
Drawings
FIG. 1 is a schematic diagram of a gallium nitride-based radiation detector with signal amplification function according to the present invention;
FIG. 2 is a schematic flow chart of the process for preparing a wafer according to the present invention;
FIG. 3 is a schematic flow chart of the preparation of a source electrode and a drain electrode according to the invention;
FIG. 4 is a schematic flow chart of the gate preparation according to the present invention;
fig. 5 is a schematic flow chart of the preparation of the back electrode according to the present invention.
The reference numerals in the drawings illustrate: 101. back electrode, 102, P-GaN layer, 103, n - -GaN drift layer, 104, gaN channel layer, 105, alN barrier layer, 106, alGaN barrier layer, 107, source, 108, drain, 109, gate, 110, electrons, 111, holes, 112, radiation.
Detailed Description
As shown in fig. 1, the gallium nitride-based radiation detector with the signal amplification function according to the invention. Comprising a back electrode 101, a P-GaN layer 102, n laminated from bottom to top - A GaN drift layer 103, a GaN channel layer 104, an AlN barrier layer 105 and an AlGaN barrier layer 106, and a source 107, a drain 108, a gate 109 arranged on the upper surface of the AlGaN barrier layer 106. P-GaN layer 102, n - The GaN drift layer 103 forms a reverse biased PN junction, n - The GaN drift layer 103 is used to generate electron-hole pairs after irradiation with the absorption radiation 112. The GaN channel layer 104, the AlN barrier layer 105, the AlGaN barrier layer 106, the source 107, the drain 108, and the gate 109 constitute a high electron mobility efficiency transistor, and the drain 108 and the source 107 are disposed on both sides of the gate 109, respectively. n is n - After the absorption ray 112 is irradiated, the GaN drift layer 103 performs the function of reverse-biasing the PN junction and outputs the signal through the high electron mobility transistor, thereby realizing the amplification output of the signal. The gallium nitride-based ray detector with the signal amplification function realizes the function of amplifying signals, and is high in sensitivity, high in response speed and high in signal-to-noise ratio, and an additional signal amplification circuit is not needed.
To n - Radiation 112 absorbed by GaN drift layer 103 is converted into an electrical signal for transmission to the high electron mobility transistor output, gaN channel layer 104 and n - The GaN drift layers 103 are electrically connected.
The doping concentration of the P-GaN layer 102 is 1×10 17 cm -3 Up to 1X 10 19 cm -3 The thickness is 0.1 μm to 1 μm.
n - The doping concentration of the GaN drift layer 103 is 1×10 15 cm -3 Up to 1X 10 18 cm -3 The thickness is 10 μm to 1cm.
The drain electrode 108 and the source electrode 107 are in ohmic contact with the upper surface of the AlGaN barrier layer 106.
The gate 109 is in schottky contact with the upper surface of the AlGaN barrier layer 106.
The back electrode 101 is in ohmic contact with the lower surface of the P-GaN layer 102
A method for preparing the gallium nitride-based radiation detector with a signal amplifying function, which comprises the following steps:
as shown in fig. 2, at n - Epitaxially growing a GaN channel layer 104, an AlN barrier layer 105 and an AlGaN barrier layer 106 on the upper surface of the GaN self-supporting substrate to form a heterojunction structure of the high electron mobility transistor; from the following surface to n - Thinning the GaN self-supporting substrate, and forming a P-GaN layer 102 by epitaxial growth or Mg ion implantation, wherein n is as follows - GaN self-supporting substrate itself forming n - -a GaN drift layer 103;
as shown in fig. 3, a metal is deposited on the upper surface of the AlGaN barrier layer 106, and ohmic contact is formed with the upper surface of the AlGaN barrier layer 106 to obtain a drain electrode 108 and a source electrode 107;
as shown in fig. 4, a metal is deposited on the upper surface of the AlGaN barrier layer 106, and schottky contact is formed with the upper surface of the AlGaN barrier layer 106 to produce a gate 109;
as shown in fig. 5, metal is deposited on the lower surface of the P-GaN layer 102, and ohmic contact is formed with the lower surface of the P-GaN layer 102, so as to obtain a back electrode 101;
the devices were singulated from the wafer to complete the fabrication.
The gallium nitride-based radiation detector with the signal amplification function provided by the embodiment has n when in work - The GaN drift layer 103 absorbs radiation 112 irradiation, generating electron-hole pairs. Back electrode 101, P-GaN layer 102, n - The GaN drift layer 103 constitutes a PN junction reverse bias. n is n - The electron-hole pairs generated in the GaN drift layer 103 are separated by the reverse bias voltage into positively charged holes 111 and negatively charged electrons 110. The separated electrons 110 drift into the GaN channel layer 104 and holes 111 enter the P-GaN layer 102. Electrons 110 enter the GaN channel layer 104 and act on the channel of the high mobility transistor, modulating the conductivity of the channel, and thus modulating the conductivity of the entire high electron mobility transistor. The radiation 112 is converted into an amplified electrical signal by this process and output from the hemt. The gallium nitride-based radiation detector with the signal amplification function is realized, an additional amplification circuit is not needed, and the gallium nitride-based radiation detector has the advantages of high sensitivity, high response speed and high signal to noise ratio, which are not possessed by the radiation detector with the additional amplification circuit. The gallium nitride-based radiation detector with the signal amplification function provided by the embodiment can be manufactured through a conventional manufacturing process of a gallium nitride-based electronic device, and the manufacturing process is simple and reliable, and the manufacturing cost is low.
It will be apparent to those skilled in the art from this disclosure that various other changes and modifications can be made which are within the scope of the invention as defined in the appended claims.
Claims (5)
1. A gallium nitride-based radiation detector with signal amplification function, comprising: a GaN-based PN junction and a high electron mobility transistor; the GaN-based PN junction comprises a back electrode (101), a P-GaN layer (102) and an n-layer which are sequentially laminated - -a GaN drift layer (103), said n - -the GaN drift layer (103) is for absorbing radiation (112) irradiation to generate electron-hole pairs; channel layer and n of the high electron mobility transistor - -the GaN drift layer (103) is electrically connected away from the surface of the P-GaN layer (102);
the high electron mobility transistor comprises a channel layer, an AlN barrier layer (105) and an AlGaN barrier layer (106) which are sequentially stacked; the channel layer is a GaN channel layer (104), and the surface far away from the AlN barrier layer (105) and n - -the GaN drift layer (103) is electrically connected; the AlGaN barrier layer (106) is provided with a source electrode (107), a drain electrode (108) and a grid electrode (109) on the surface far away from the AlN barrier layer (105), wherein the drain electrode (108) and the source electrode (107) are in ohmic contact with the surface of the AlGaN barrier layer (106) respectively; the grid electrode (109) is in Schottky contact with the surface of the AlGaN barrier layer (106);
the P-GaN layer (102) has a doping concentration of 1X 10 17 cm -3 Up to 1X 10 19 cm -3 。
2. A gallium nitride-based radiation detector with signal amplification function according to claim 1, wherein the P-GaN layer (102) has a thickness of 0.1 μm to 1 μm.
3. A gallium nitride-based radiation detector with signal amplification function according to claim 1, wherein said n - -the doping concentration of the GaN drift layer (103) is 1×10 15 cm -3 Up to 1X 10 18 cm -3 。
4. A gallium nitride-based radiation detector with signal amplification function according to claim 1, wherein said n - -the GaN drift layer (103) has a thickness of 10 μm to 1cm.
5. A method for manufacturing a gallium nitride-based radiation detector with signal amplification function according to any one of claims 1 to 4, comprising the steps of:
(1) Preparing a round wafer: at n - -epitaxially growing a GaN channel layer (104), an AlN barrier layer (105) and an AlGaN barrier layer (106) on the upper surface of the GaN self-supporting substrate to form a heterojunction structure of the high electron mobility transistor; from the following surface to n - The GaN free standing substrate is thinned and shaped by epitaxial growth or Mg ion implantationForming a P-GaN layer (102), said n - GaN self-supporting substrate itself forming n - -a GaN drift layer (103) to produce a wafer;
(2) Drain (108) and source (107) are prepared: depositing metal on the upper surface of the AlGaN barrier layer (106), and forming ohmic contact with the upper surface of the AlGaN barrier layer (106) to obtain a drain electrode (108) and a source electrode (107);
(3) Preparation of gate (109): depositing metal on the upper surface of the AlGaN barrier layer (106), and forming Schottky contact with the upper surface of the AlGaN barrier layer (106) to obtain a grid electrode (109);
(4) Preparation of the back electrode (101): and depositing metal on the lower surface of the P-GaN layer (102), and forming ohmic contact with the lower surface of the P-GaN layer (102) to obtain the back electrode (101).
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0272372A1 (en) * | 1986-12-24 | 1988-06-29 | Licentia Patent-Verwaltungs-GmbH | Method of making a monolithic integrated photodetector |
| JPH0237746A (en) * | 1988-07-28 | 1990-02-07 | Fujitsu Ltd | Semiconductor device |
| EP0392480A2 (en) * | 1989-04-12 | 1990-10-17 | Sumitomo Electric Industries, Ltd. | Method of manufacturing a semiconductor integrated circuit device |
| US5432470A (en) * | 1991-08-02 | 1995-07-11 | Sumitomo Electric Industries, Ltd. | Optoelectronic integrated circuit device |
| JP2000340826A (en) * | 1999-05-27 | 2000-12-08 | Denso Corp | High electron mobility phototransistor |
| US6727530B1 (en) * | 2003-03-04 | 2004-04-27 | Xindium Technologies, Inc. | Integrated photodetector and heterojunction bipolar transistors |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6995407B2 (en) * | 2002-10-25 | 2006-02-07 | The University Of Connecticut | Photonic digital-to-analog converter employing a plurality of heterojunction thyristor devices |
| CN208157438U (en) * | 2018-05-10 | 2018-11-27 | 广东省半导体产业技术研究院 | A kind of included signal amplifying function gallium nitride base ray detector |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0272372A1 (en) * | 1986-12-24 | 1988-06-29 | Licentia Patent-Verwaltungs-GmbH | Method of making a monolithic integrated photodetector |
| JPH0237746A (en) * | 1988-07-28 | 1990-02-07 | Fujitsu Ltd | Semiconductor device |
| EP0392480A2 (en) * | 1989-04-12 | 1990-10-17 | Sumitomo Electric Industries, Ltd. | Method of manufacturing a semiconductor integrated circuit device |
| US5432470A (en) * | 1991-08-02 | 1995-07-11 | Sumitomo Electric Industries, Ltd. | Optoelectronic integrated circuit device |
| JP2000340826A (en) * | 1999-05-27 | 2000-12-08 | Denso Corp | High electron mobility phototransistor |
| US6727530B1 (en) * | 2003-03-04 | 2004-04-27 | Xindium Technologies, Inc. | Integrated photodetector and heterojunction bipolar transistors |
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