CN208157438U - A kind of included signal amplifying function gallium nitride base ray detector - Google Patents
A kind of included signal amplifying function gallium nitride base ray detector Download PDFInfo
- Publication number
- CN208157438U CN208157438U CN201820693061.4U CN201820693061U CN208157438U CN 208157438 U CN208157438 U CN 208157438U CN 201820693061 U CN201820693061 U CN 201820693061U CN 208157438 U CN208157438 U CN 208157438U
- Authority
- CN
- China
- Prior art keywords
- gan
- layer
- ray detector
- gallium nitride
- signal amplifying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model discloses a kind of included signal amplifying function gallium nitride base ray detectors, belong to technical field of semiconductor device.A kind of ray detector described in the utility model, including：GaN base PN junction and high electron mobility transistor；The GaN base PN junction includes the back electrode stacked gradually, P-GaN layers and n‑GaN drift layer, the n‑GaN drift layer generates electron hole pair for absorbing x ray irradiation x；The channel layer and n of the high electron mobility transistor‑GaN drift layer is connected far from P-GaN layers of surface electrical behavior.The high electron mobility transistor includes the channel layer stacked gradually, the barrier layer AlN and AlGaN potential barrier；The channel layer is GaN channel layer, surface and n far from the barrier layer AlN‑GaN drift layer is electrically connected；AlGaN potential barrier is respectively equipped with source electrode, drain and gate far from the surface on the barrier layer AlN.Detector described in the utility model realizes the ray detector of included signal amplifying function, and high sensitivity, fast response time, signal-to-noise ratio are high, and preparation process is simple and reliable.
Description
Technical field
The utility model relates to field of semiconductor devices, and in particular to a kind of included signal amplifying function gallium nitride base ray
Detector.
Background technique
Gallium nitride material is a kind of direct band-gap semicondictor, and due to having, forbidden bandwidth is big, electron mobility is high, breakdown field
The features such as strong high is ideal at present radiation resistance and fast-response X-ray detection X material, in cosmic ray detection, high energy acceleration
There is wide answer in the fields such as the detection of particle head-on collision product, nuclear fission and nuclear fusion radiation detection, medical diagnosis and industrial detection
Use prospect.
Highly sensitive, low noise and fast-response are three important indicators of ray detector.Current ray detecting system
Mostly use sensitive detection parts and signal amplification circuit cascade mode, including charge sensitive preamplifier, spectroscope amplifier etc..By
Usually realize that Radiation hardness is weaker by si-substrate integrated circuit in signal amplification circuit, so spatially locating with sensitive detection parts
In isolation, the problems such as response speed of ray detecting system is slow, sensitivity is low and poor signal to noise is inevitably caused.
Therefore, need to develop a kind of X-ray detection X device per se with signal amplifying function to overcome the prior art to be deposited
Deficiency.
Utility model content
In order to solve the above-mentioned problems of the prior art, the utility model aim is to provide a kind of from band signal amplification
Function gallium nitride base ray detector.
A kind of included signal amplifying function gallium nitride base ray detector described in the utility model, including：GaN base PN
Knot and high electron mobility transistor；The GaN base PN junction includes the back electrode stacked gradually, P-GaN layer and n-- GaN drift
Move layer, the n-GaN drift layer generates electron hole pair for absorbing x ray irradiation x；The high electron mobility transistor
Channel layer and n-GaN drift layer is far from P-The surface electrical behavior of GaN layer connects.
Preferably, the high electron mobility transistor includes the channel layer stacked gradually, the barrier layer AlN and AlGaN gesture
Barrier layer；The channel layer is GaN channel layer, surface and n far from the barrier layer AlN-GaN drift layer is electrically connected；AlGaN gesture
Barrier layer is respectively equipped with source electrode, drain and gate far from the surface on the barrier layer AlN, the drain electrode and the source electrode respectively with it is described
AlGaN potential barrier surface Ohmic contact；The grid and the AlGaN potential barrier surface are Schottky contacts.
Preferably, the P-The doping concentration of GaN layer is 1 × 1017cm-3To 1 × 1019cm-3。
Preferably, the P-GaN layer with a thickness of 0.1 μm to 1 μm.
Preferably, the n-The doping concentration of GaN drift layer is 1 × 1015cm-3To 1 × 1018cm-3。
Preferably, the n-GaN drift layer with a thickness of 10 μm to 1cm.
A kind of included signal amplifying function gallium nitride base ray detector described in the utility model, the advantage is that, this
A kind of included signal amplifying function gallium nitride base ray detector described in utility model is after absorbing x ray irradiation x, by reversed
The PN junction of biasing acts on, and the electric signal of amplification is outputed through high electron mobility transistor.Included signal amplifying function is realized,
The other signal amplification circuit of optional equipment is no longer needed to, has the advantages that high sensitivity, fast response time and signal-to-noise ratio are high.Separately
Outside, the utility model can be made by the preparation process of conventional gallium nitride based electronic device, and preparation process is simple and reliable, preparation
It is at low cost.
Detailed description of the invention
Fig. 1 is a kind of structural representation of included signal amplifying function gallium nitride base ray detector described in the utility model
Figure；
Fig. 2 is the flow diagram for preparing circular wafer described in the utility model；
Fig. 3 is the flow diagram for preparing source electrode and drain electrode described in the utility model；
Fig. 4 is the flow diagram for preparing grid described in the utility model；
Fig. 5 is the flow diagram for preparing back electrode described in the utility model.
Description of symbols in figure：101, back electrode, 102, P-GaN layer, 103, n-GaN drift layer, 104, GaN channel
Layer, 105, the barrier layer AlN, 106, AlGaN potential barrier, 107, source electrode, 108, drain electrode, 109, grid, 110, electronics, 111, sky
Cave, 112, ray.
Specific embodiment
As shown in Figure 1, a kind of included signal amplifying function gallium nitride base ray detector described in the utility model.Including
Back electrode 101, the P being from bottom to top laminated-GaN layer 102, n-GaN drift layer 103, GaN channel layer 104, the barrier layer AlN 105
With AlGaN potential barrier 106 and the source electrode 107 being arranged on 106 upper surface of AlGaN potential barrier, drain electrode 108, grid 109.Institute
State P-GaN layer 102, n-GaN drift layer 103 constitutes the PN junction of reverse bias, the n-GaN drift layer 103 is penetrated for absorbing
Line 112 generates electron hole pair after irradiating.The GaN channel layer 104, the barrier layer AlN 105, AlGaN potential barrier 106, source electrode
107, drain electrode 108 and grid 109 constitute high electron mobility efficiency crystalline pipe, and the drain electrode 108 and source electrode 107 are arranged in
109 two sides of grid.n-- GaN drift layer 103 is acted on, then pass through after absorbing ray 112 and irradiating by reverse biased PN junction
It is exported by high electron mobility transistor, realizes the amplification output to signal.It is described in the utility model a kind of from band signal
Enlarging function gallium nitride base ray detector, realizes the function of included amplified signal, and the signal other without optional equipment is put
Big circuit, high sensitivity, fast response time and signal-to-noise ratio are high.
In order to by n-The irradiation of ray 112 that GaN drift layer 103 absorbs is converted to electric signal and passes to high electron mobility effect
The output of rate transistor, GaN channel layer 104 and n-It is electric connection between GaN drift layer 103.
P-The doping concentration of GaN layer 102 is 1 × 1017cm-3To 1 × 1019cm-3, with a thickness of 0.1 μm to 1 μm.
n-The doping concentration of GaN drift layer 103 is 1 × 1015cm-3To 1 × 1018cm-3, with a thickness of 10 μm to 1cm.
Drain electrode 108 and source electrode 107 are Ohmic contact with 106 upper surface of AlGaN potential barrier.
Grid 109 and 106 upper surface of AlGaN potential barrier are Schottky contacts.
Back electrode 101 and the P-102 lower surface of GaN layer is Ohmic contact
A method of preparing a kind of included signal amplifying function gallium nitride base ray detector, including following step
Suddenly:
As shown in Fig. 2, in n-The upper surface epitaxial growth GaN channel layer 104 of-GaN self-supported substrate, the barrier layer AlN 105
With AlGaN potential barrier 106, the heterojunction structure of high electron mobility transistor is formed；From lower surface to n-- GaN self-supporting lining
Bottom carry out it is thinned, and with the method for epitaxial growth or Mg ion implanting formed p-GaN layer 102, the n-- GaN self-supported substrate
Itself forms n-GaN drift layer 103；
As shown in figure 3, the deposited metal on 106 upper surface of AlGaN potential barrier, with the AlGaN potential barrier 106
Upper surface forms Ohmic contact, and drain electrode 108 and source electrode 107 is made；
As shown in figure 4, the deposited metal on 106 upper surface of AlGaN potential barrier, with the AlGaN potential barrier 106
Upper surface forms Schottky contacts, and grid 109 is made；
As shown in figure 5, in the p-102 lower surface deposited metal of GaN layer, with the p-102 lower surface of GaN layer forms Europe
Nurse contact, is made back electrode 101；
Device is cut to separation from circular wafer and completes preparation.
The present embodiment propose a kind of included signal amplifying function gallium nitride base ray detector at work, n--GaN
Drift layer 103 absorbs ray 112 and irradiates, and generates electron hole pair.Back electrode 101, P-GaN layer 102, n-- GaN drift layer 103
Constitute PN junction reverse bias.n-The electron hole pair generated in GaN drift layer 103 is occurred to divide by the effect of reverse bias voltage
From being separated into positively charged hole 111 and negatively charged electronics 110.The isolated drift of electronics 110 enters GaN channel layer
104, hole 111 enters P-GaN layer 102.Electronics 110 enters GaN channel layer 104, acts on high transport efficiency transistor
Channel is modulated the electric conductivity of its channel, and then is modulated to the electric conductivity of entire high electron mobility transistor.It penetrates
Line 112 is converted to the electric signal being exaggerated through this process and exports from high electron mobility transistor.It realizes and amplifies from band signal
Function gallium nitride base ray detector has the ray that need to configure additional amplifying circuit without being equipped with additional amplifying circuit
The high advantage of high sensitivity, fast response time and the signal-to-noise ratio that detector does not have.The present embodiment proposes a kind of from band signal
Enlarging function gallium nitride base ray detector can be made by the preparation process of conventional gallium nitride based electronic device, preparation process
Simple and reliable, preparation cost is low.
For those skilled in the art, it can make other each according to the above description of the technical scheme and ideas
The corresponding change of kind and deformation, and all these changes and deformation all should belong to the guarantor of the utility model claims
Within the scope of shield.
Claims (6)
1. a kind of included signal amplifying function gallium nitride base ray detector, which is characterized in that including：GaN base PN junction and height electricity
Transport factor transistor；The GaN base PN junction includes back electrode (101), the P stacked gradually-GaN layer (102) and n-- GaN drift
It moves layer (103), the n-GaN drift layer (103) generates electron hole pair for absorbing ray (112) irradiation；The height electricity
The channel layer and n of transport factor transistor-GaN drift layer (103) is far from P-The surface electrical behavior of GaN layer (102) connects.
2. a kind of included signal amplifying function gallium nitride base ray detector according to claim 1, which is characterized in that described
High electron mobility transistor includes the channel layer stacked gradually, the barrier layer AlN (105) and AlGaN potential barrier (106)；It is described
Channel layer is GaN channel layer (104), surface and n far from the barrier layer AlN (105)-GaN drift layer (103) is electrically connected；
AlGaN potential barrier (106) is respectively equipped with source electrode (107), drain electrode (108) and grid far from the surface of the barrier layer AlN (105)
(109), the drain electrode (108) and the source electrode (107) respectively with the AlGaN potential barrier (106) surface Ohmic contact；Institute
It states grid (109) and the AlGaN potential barrier (106) surface is Schottky contacts.
3. a kind of included signal amplifying function gallium nitride base ray detector according to claim 1, which is characterized in that described
P-The doping concentration of GaN layer (102) is 1 × 1017cm-3To 1 × 1019cm-3。
4. a kind of included signal amplifying function gallium nitride base ray detector according to claim 1, which is characterized in that described
P-GaN layer (102) with a thickness of 0.1 μm to 1 μm.
5. a kind of included signal amplifying function gallium nitride base ray detector according to claim 1, which is characterized in that described
n-The doping concentration of GaN drift layer (103) is 1 × 1015cm-3To 1 × 1018cm-3。
6. a kind of included signal amplifying function gallium nitride base ray detector according to claim 1, which is characterized in that described
n-GaN drift layer (103) with a thickness of 10 μm to 1cm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820693061.4U CN208157438U (en) | 2018-05-10 | 2018-05-10 | A kind of included signal amplifying function gallium nitride base ray detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820693061.4U CN208157438U (en) | 2018-05-10 | 2018-05-10 | A kind of included signal amplifying function gallium nitride base ray detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208157438U true CN208157438U (en) | 2018-11-27 |
Family
ID=64390267
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820693061.4U Active CN208157438U (en) | 2018-05-10 | 2018-05-10 | A kind of included signal amplifying function gallium nitride base ray detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208157438U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108417662A (en) * | 2018-05-10 | 2018-08-17 | 广东省半导体产业技术研究院 | A kind of included signal amplifying function gallium nitride base ray detector and preparation method thereof |
-
2018
- 2018-05-10 CN CN201820693061.4U patent/CN208157438U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108417662A (en) * | 2018-05-10 | 2018-08-17 | 广东省半导体产业技术研究院 | A kind of included signal amplifying function gallium nitride base ray detector and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10115750B2 (en) | Sensors including complementary lateral bipolar junction transistors | |
| JPWO2009022378A1 (en) | Radiation detector | |
| CN208157438U (en) | A kind of included signal amplifying function gallium nitride base ray detector | |
| Reddy et al. | Study on avalanche breakdown and Poole–Frenkel emission in Al-rich AlGaN grown on single crystal AlN | |
| US11119228B2 (en) | Radiation detector and radiation detection device using the same | |
| RU2494497C2 (en) | Mos-diode cell of solid radiation detector | |
| CN108417662B (en) | Gallium nitride-based radiation detector with signal amplification function and preparation method thereof | |
| Geng et al. | Charge transport mechanism of self-powered GaN pin α-particle detector | |
| Fernandez-Martinez et al. | Low Gain Avalanche Detectors for high energy physics | |
| Bertuccio et al. | Ultra low noise epitaxial 4H-SiC X-ray detectors | |
| RU2383968C2 (en) | Integrated bi-mos radiation detector cell | |
| Bertuccio | Silicon carbide radiation microdetectors for harsh environments | |
| RU178710U1 (en) | Internal amplification semiconductor detector | |
| De Napoli et al. | Study of charge collection efficiency in 4H–SiC Schottky diodes with 12C ions | |
| US20120313195A1 (en) | Semiconductor mos entrance window for radiation detectors | |
| RU2583857C1 (en) | Bipolar cell coordinate sensor - radiation detector | |
| US20230065356A1 (en) | Simplified Structure for a Low Gain Avalanche Diode with Closely Spaced Electrodes | |
| RU188417U1 (en) | Detector with amplification based on heterobipolar transistor | |
| Yang et al. | Development of pin radiation detectors based on semi-insulating 4H-SiC substrate via dual-face ion implantation | |
| US11721779B2 (en) | Photodetector and optical sensing system | |
| US20230178644A1 (en) | Radiation-hard, temperature tolerant, gan hemt devices for radiation sensing applications | |
| Shilpa et al. | Spectroscopic performance of Ni/4H-SiC and Ti/4H-SiC Schottky barrier diode alpha particle detectors | |
| CN117712217A (en) | Silicon carbide detector chip and circuit of integrated BJT | |
| US7485950B2 (en) | Impact ionization amplification apparatus method and system | |
| JP2018017685A (en) | Radiation detector |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 510651 No. 363, Changxin Road, Guangzhou, Guangdong, Tianhe District Patentee after: Institute of semiconductors, Guangdong Academy of Sciences Address before: LED Yard, No. 363, Changxing Road, Tianhe District, Guangzhou, Guangdong 510000 Patentee before: GUANGDONG INSTITUTE OF SEMICONDUCTOR INDUSTRIAL TECHNOLOGY |
|
| CP03 | Change of name, title or address |