CN108417662A - A kind of included signal amplifying function gallium nitride base ray detector and preparation method thereof - Google Patents
A kind of included signal amplifying function gallium nitride base ray detector and preparation method thereof Download PDFInfo
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- CN108417662A CN108417662A CN201810442209.1A CN201810442209A CN108417662A CN 108417662 A CN108417662 A CN 108417662A CN 201810442209 A CN201810442209 A CN 201810442209A CN 108417662 A CN108417662 A CN 108417662A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 108
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title abstract description 11
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 31
- 238000005036 potential barrier Methods 0.000 claims abstract description 29
- 230000004888 barrier function Effects 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 229910001425 magnesium ion Inorganic materials 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 230000004044 response Effects 0.000 abstract description 7
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000006870 function Effects 0.000 description 15
- 230000003321 amplification Effects 0.000 description 7
- 238000001514 detection method Methods 0.000 description 7
- 238000003199 nucleic acid amplification method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000011896 sensitive detection Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 230000004992 fission Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009131 signaling function Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
- H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a kind of included signal amplifying function gallium nitride base ray detectors and preparation method thereof, belong to technical field of semiconductor device.A kind of ray detector of the present invention, including：GaN base PN junction and high electron mobility transistor；The GaN base PN junction includes the back electrode stacked gradually, P GaN layers and n‑GaN drift layer, the n‑GaN drift layer generates electron hole pair for absorbing x ray irradiation x；The channel layer and n of the high electron mobility transistor‑Surface electrical behavior connection of the GaN drift layer far from P GaN layers.The high electron mobility transistor includes the channel layer stacked gradually, the barrier layers AlN and AlGaN potential barrier；The channel layer is GaN channel layers, the surface far from the barrier layers AlN and n‑GaN drift layer is electrically connected；Surface of the AlGaN potential barrier far from the barrier layers AlN is respectively equipped with source electrode, drain and gate.Detector of the present invention realizes the ray detector of included signal amplifying function, and high sensitivity, fast response time, signal-to-noise ratio are high, and preparation process is simple and reliable.
Description
Technical field
The present invention relates to field of semiconductor devices, and in particular to a kind of included signal amplifying function gallium nitride base X-ray detection X
Device and preparation method thereof.
Background technology
Gallium nitride material is a kind of direct band-gap semicondictor, and due to having, energy gap is big, electron mobility is high, breakdown field
The features such as strong high is current ideal radiation resistance and fast-response X-ray detection X material, in cosmic ray detection, high energy acceleration
There is wide answer in the fields such as the detection of particle head-on collision product, nuclear fission and nuclear fusion radiation detection, medical diagnosis and industrial detection
Use foreground.
Highly sensitive, low noise and fast-response are three important indicators of ray detector.Current ray detecting system
Mostly use sensitive detection parts and signal amplification circuit cascade pattern, including charge sensitive preamplifier, spectroscope amplifier etc..By
Usually realize that Radiation hardness is weaker by si-substrate integrated circuit in signal amplification circuit, so spatially locating with sensitive detection parts
In isolation, the problems such as response speed of ray detecting system is slow, sensitivity is low and poor signal to noise is inevitably caused.
Therefore, there is an urgent need for develop a kind of to overcome the prior art to be deposited per se with the X-ray detection X device of signal amplifying function
Deficiency.
Invention content
In order to solve the above-mentioned problems of the prior art, present invention aims at provide a kind of included signal amplifying function
Gallium nitride base ray detector and preparation method thereof.
A kind of included signal amplifying function gallium nitride base ray detector of the present invention, including：GaN base PN junction and height
Electron mobility transistor；The GaN base PN junction includes the back electrode stacked gradually, P-GaN layers and n-GaN drift layer, institute
State n-GaN drift layer generates electron hole pair for absorbing x ray irradiation x；The channel layer of the high electron mobility transistor
With n-GaN drift layer is connected far from P-GaN layers of surface electrical behavior.
Preferably, the high electron mobility transistor includes the channel layer stacked gradually, the barrier layers AlN and AlGaN gesture
Barrier layer；The channel layer is GaN channel layers, the surface far from the barrier layers AlN and n-GaN drift layer is electrically connected；AlGaN gesture
Surface of the barrier layer far from the barrier layers AlN is respectively equipped with source electrode, drain and gate, the drain electrode and the source electrode respectively with it is described
AlGaN potential barrier surface Ohmic contact；The grid is Schottky contacts with the AlGaN potential barrier surface.
Preferably, P-GaN layers of the doping concentration is 1 × 1017cm-3To 1 × 1019cm-3。
Preferably, P-GaN layers of the thickness is 0.1 μm to 1 μm.
Preferably, the n-The doping concentration of GaN drift layer is 1 × 1015cm-3To 1 × 1018cm-3。
Preferably, the n-The thickness of GaN drift layer is 10 μm to 1cm.
A method of preparing a kind of included signal amplifying function gallium nitride base ray detector, which is characterized in that
Include the following steps:
(1) circular wafer is prepared：In n-The upper surface epitaxial growth GaN channel layers of-GaN self-supported substrates, the barrier layers AlN and
AlGaN potential barrier forms the heterojunction structure of high electron mobility transistor；From lower surface to n-- GaN self-supported substrates carry out
It is thinned, is used in combination the method for epitaxial growth or Mg ion implantings to form P-GaN layers, the n-- GaN self-supported substrates itself formation
n-Circular wafer is made in GaN drift layer；
(2) drain electrode and source electrode are prepared：The deposited metal on the AlGaN potential barrier upper surface, with the AlGaN potential barrier
Upper surface forms Ohmic contact, and drain electrode and source electrode is made；
(3) grid is prepared：The deposited metal on the AlGaN potential barrier upper surface, with the AlGaN potential barrier upper surface
Schottky contacts are formed, grid is made；
(4) back electrode is prepared：In the P-GaN layers of lower surface deposited metal, ohm is formed with the lower surface P-GaN layers of
Back electrode is made in contact.
A kind of included signal amplifying function gallium nitride base ray detector of the present invention and preparation method thereof, advantage
It is, a kind of included signal amplifying function gallium nitride base ray detector of the present invention passes through after absorbing x ray irradiation x
The PN junction of reverse bias acts on, and the electric signal of amplification is outputed through high electron mobility transistor.It realizes and amplifies from band signal
Function no longer needs to the other signal amplification circuit of optional equipment, with high sensitivity, fast response time and high excellent of signal-to-noise ratio
Point.In addition, the present invention can be made by the preparation process of conventional gallium nitride based electronic device, preparation process is simple and reliable, system
It is standby at low cost.
Description of the drawings
Fig. 1 is a kind of structural schematic diagram of included signal amplifying function gallium nitride base ray detector of the present invention；
Fig. 2 is the flow diagram of the present invention for preparing circular wafer；
Fig. 3 is the flow diagram of the present invention for preparing source electrode and drain electrode；
Fig. 4 is the flow diagram of the present invention for preparing grid；
Fig. 5 is the flow diagram of the present invention for preparing back electrode.
Reference sign in figure：101, back electrode, 102, P-GaN layers, 103, n-GaN drift layer, 104, GaN raceway grooves
Layer, 105, the barrier layers AlN, 106, AlGaN potential barrier, 107, source electrode, 108, drain electrode, 109, grid, 110, electronics, 111, empty
Cave, 112, ray.
Specific implementation mode
As shown in Figure 1, a kind of included signal amplifying function gallium nitride base ray detector of the present invention.Including under
And back electrode 101, P-GaN layers 102, the n of upper stacking-GaN drift layer 103, GaN channel layers 104,105 and of the barrier layers AlN
AlGaN potential barrier 106 and the source electrode 107 being arranged on 106 upper surface of AlGaN potential barrier, drain electrode 108, grid 109.P-GaN
Layer 102, n-GaN drift layer 103 constitutes the PN junction of reverse bias, n-After GaN drift layer 103 is for absorbing the irradiation of ray 112
Generate electron hole pair.GaN channel layers 104, the barrier layers AlN 105, AlGaN potential barrier 106, source electrode 107, drain electrode 108 and grid
109 constitute high electron mobility efficiency crystalline pipe, and drain electrode 108 and source electrode 107 are arranged in 109 both sides of grid.n-- GaN floats
Layer 103 is moved after absorbing ray 112 and irradiating, is acted on by reverse biased PN junction, then exported via high electron mobility transistor,
Realize the amplification output to signal.A kind of included signal amplifying function gallium nitride base ray detector of the present invention, it is real
Show the function of included amplified signal, the signal amplification circuit other without optional equipment, high sensitivity, fast response time and letter
It makes an uproar than high.
In order to by n-The irradiation of ray 112 that GaN drift layer 103 absorbs is converted to electric signal and passes to high electron mobility effect
Rate transistor exports, GaN channel layers 104 and n-It is electric connection between GaN drift layer 103.
The doping concentration of P-GaN layers 102 is 1 × 1017cm-3To 1 × 1019cm-3, thickness is 0.1 μm to 1 μm.
n-The doping concentration of GaN drift layer 103 is 1 × 1015cm-3To 1 × 1018cm-3, thickness is 10 μm to 1cm.
Drain electrode 108 and source electrode 107 are Ohmic contact with 106 upper surface of the AlGaN potential barrier.
Grid 109 is Schottky contacts with 106 upper surface of the AlGaN potential barrier.
Back electrode 101 is Ohmic contact with 102 lower surface of P-GaN layers
A method of preparing a kind of included signal amplifying function gallium nitride base ray detector, including following step
Suddenly:
As shown in Fig. 2, in n-The upper surface epitaxial growth GaN channel layers 104 of-GaN self-supported substrates, the barrier layers AlN 105
With AlGaN potential barrier 106, the heterojunction structure of high electron mobility transistor is formed；From lower surface to n-- GaN self-supportings serve as a contrast
Bottom is thinned, and the method for epitaxial growth or Mg ion implantings is used in combination to form P-GaN layers 102, the n-- GaN self-supportings serve as a contrast
Bottom itself forms n-GaN drift layer 103；
As shown in figure 3, the deposited metal on 106 upper surface of AlGaN potential barrier, forms with 106 upper surface of AlGaN potential barrier
Drain electrode 108 and source electrode 107 is made in Ohmic contact；
As shown in figure 4, the deposited metal on 106 upper surface of AlGaN potential barrier, forms with 106 upper surface of AlGaN potential barrier
Grid 109 is made in Schottky contacts；
As shown in figure 5, in 102 lower surface deposited metal of P-GaN layers, Ohmic contact is formed with 102 lower surface of P-GaN layers,
Back electrode 101 is made；
Device is cut separation from circular wafer to complete to prepare.
The present embodiment propose a kind of included signal amplifying function gallium nitride base ray detector at work, n-- GaN floats
It moves layer 103 and absorbs the irradiation of ray 112, generate electron hole pair.Back electrode 101, P-GaN layers 102, n-103 structure of GaN drift layer
At PN junction reverse bias.n-The electron hole pair generated in GaN drift layer 103 is detached by the effect of reverse bias voltage,
It is separated into positively charged hole 111 and negatively charged electronics 110.The drift of electronics 110 of separation enters GaN channel layers 104,
Hole 111 enters P-GaN layers 102.Electronics 110 enters GaN channel layers 104, acts on the raceway groove of high transport efficiency transistor,
The electric conductivity of its raceway groove is modulated, and then the electric conductivity of entire high electron mobility transistor is modulated.Ray 112
The electric signal being exaggerated is converted to through this process to export from high electron mobility transistor.Realize included signal amplifying function nitrogen
Change gallium base ray detector and has the ray detector that need to configure additional amplifying circuit without being equipped with additional amplifying circuit
The high advantage of the high sensitivity, fast response time and the signal-to-noise ratio that do not have.The present embodiment proposes a kind of from band signal amplification work(
Energy gallium nitride base ray detector can be made by the preparation process of conventional gallium nitride based electronic device, and preparation process simply may be used
It leans on, manufacturing cost is low.
For those skilled in the art, technical solution that can be as described above and design are made other each
The corresponding change of kind and deformation, and all these changes and deformation should all belong to the protection model of the claims in the present invention
Within enclosing.
Claims (7)
1. a kind of included signal amplifying function gallium nitride base ray detector, which is characterized in that including：GaN base PN junction and height electricity
Transport factor transistor；The GaN base PN junction includes the back electrode (101) stacked gradually, P-GaN layers (102) and n--GaN
Drift layer (103), the n-GaN drift layer (103) generates electron hole pair for absorbing ray (112) irradiation；The height
The channel layer and n of electron mobility transistor-Surface electrical behavior of the GaN drift layer (103) far from P-GaN layers (102) connects.
2. a kind of included signal amplifying function gallium nitride base ray detector according to claim 1, which is characterized in that described
High electron mobility transistor includes the channel layer stacked gradually, the barrier layers AlN (105) and AlGaN potential barrier (106)；It is described
Channel layer is GaN channel layers (104), the surface far from the barrier layers AlN (105) and n-GaN drift layer (103) is electrically connected；
Surface of the AlGaN potential barrier (106) far from the barrier layers AlN (105) is respectively equipped with source electrode (107), drain electrode (108) and grid
(109), the drain electrode (108) and the source electrode (107) respectively with the AlGaN potential barrier (106) surface Ohmic contact；Institute
It is Schottky contacts that grid (109), which is stated, with the AlGaN potential barrier (106) surface.
3. a kind of included signal amplifying function gallium nitride base ray detector according to claim 1, which is characterized in that described
The doping concentration of P-GaN layers (102) is 1 × 1017cm-3To 1 × 1019cm-3。
4. a kind of included signal amplifying function gallium nitride base ray detector according to claim 1, which is characterized in that described
The thickness of P-GaN layers (102) is 0.1 μm to 1 μm.
5. a kind of included signal amplifying function gallium nitride base ray detector according to claim 1, which is characterized in that described
n-The doping concentration of GaN drift layer (103) is 1 × 1015cm-3To 1 × 1018cm-3。
6. a kind of included signal amplifying function gallium nitride base ray detector according to claim 1, which is characterized in that described
n-The thickness of GaN drift layer (103) is 10 μm to 1cm.
7. a kind of preparing a kind of any sides of included signal amplifying function gallium nitride base ray detector claim 1-6
Method, which is characterized in that include the following steps:
(1) circular wafer is prepared：In n-The upper surface epitaxial growth GaN channel layers (104) of-GaN self-supported substrates, the barrier layers AlN
(105) and AlGaN potential barrier (106), the heterojunction structure of high electron mobility transistor is formed；From lower surface to n-- GaN is certainly
Support substrate is thinned, and the method for epitaxial growth or Mg ion implantings is used in combination to form P-GaN layers (102), the n--GaN
Self-supported substrate itself forms n-Circular wafer is made in GaN drift layer (103)；
(2) drain electrode (108) and source electrode (107) are prepared：The deposited metal on the AlGaN potential barrier (106) upper surface, and it is described
AlGaN potential barrier (106) upper surface forms Ohmic contact, and drain electrode (108) and source electrode (107) is made；
(3) grid (109) is prepared：The deposited metal on the AlGaN potential barrier (106) upper surface, with the AlGaN potential barrier
(106) upper surface forms Schottky contacts, and grid (109) is made；
(4) back electrode (101) is prepared：In P-GaN layers described (102) lower surface deposited metal, and under P-GaN layers described (102)
Surface forms Ohmic contact, and back electrode (101) is made.
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| CN201810442209.1A CN108417662B (en) | 2018-05-10 | 2018-05-10 | Gallium nitride-based radiation detector with signal amplification function and preparation method thereof |
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| CN201810442209.1A CN108417662B (en) | 2018-05-10 | 2018-05-10 | Gallium nitride-based radiation detector with signal amplification function and preparation method thereof |
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| CN108417662B CN108417662B (en) | 2023-06-09 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110047956A (en) * | 2019-04-25 | 2019-07-23 | 南京大学 | Planes AlGaN base schottky type ultraviolet detector such as non-with light blocking layer and preparation method thereof |
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|---|---|---|---|---|
| EP0272372A1 (en) * | 1986-12-24 | 1988-06-29 | Licentia Patent-Verwaltungs-GmbH | Method of making a monolithic integrated photodetector |
| JPH0237746A (en) * | 1988-07-28 | 1990-02-07 | Fujitsu Ltd | Semiconductor device |
| EP0392480A2 (en) * | 1989-04-12 | 1990-10-17 | Sumitomo Electric Industries, Ltd. | Method of manufacturing a semiconductor integrated circuit device |
| US5432470A (en) * | 1991-08-02 | 1995-07-11 | Sumitomo Electric Industries, Ltd. | Optoelectronic integrated circuit device |
| JP2000340826A (en) * | 1999-05-27 | 2000-12-08 | Denso Corp | High electron mobility phototransistor |
| US6727530B1 (en) * | 2003-03-04 | 2004-04-27 | Xindium Technologies, Inc. | Integrated photodetector and heterojunction bipolar transistors |
| US20040079961A1 (en) * | 2002-10-25 | 2004-04-29 | The University Of Connecticut | Photonic digital-to-analog converter employing a plurality of heterojunction thyristor devices |
| CN208157438U (en) * | 2018-05-10 | 2018-11-27 | 广东省半导体产业技术研究院 | A kind of included signal amplifying function gallium nitride base ray detector |
-
2018
- 2018-05-10 CN CN201810442209.1A patent/CN108417662B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0272372A1 (en) * | 1986-12-24 | 1988-06-29 | Licentia Patent-Verwaltungs-GmbH | Method of making a monolithic integrated photodetector |
| JPH0237746A (en) * | 1988-07-28 | 1990-02-07 | Fujitsu Ltd | Semiconductor device |
| EP0392480A2 (en) * | 1989-04-12 | 1990-10-17 | Sumitomo Electric Industries, Ltd. | Method of manufacturing a semiconductor integrated circuit device |
| US5432470A (en) * | 1991-08-02 | 1995-07-11 | Sumitomo Electric Industries, Ltd. | Optoelectronic integrated circuit device |
| JP2000340826A (en) * | 1999-05-27 | 2000-12-08 | Denso Corp | High electron mobility phototransistor |
| US20040079961A1 (en) * | 2002-10-25 | 2004-04-29 | The University Of Connecticut | Photonic digital-to-analog converter employing a plurality of heterojunction thyristor devices |
| US6727530B1 (en) * | 2003-03-04 | 2004-04-27 | Xindium Technologies, Inc. | Integrated photodetector and heterojunction bipolar transistors |
| CN208157438U (en) * | 2018-05-10 | 2018-11-27 | 广东省半导体产业技术研究院 | A kind of included signal amplifying function gallium nitride base ray detector |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110047956A (en) * | 2019-04-25 | 2019-07-23 | 南京大学 | Planes AlGaN base schottky type ultraviolet detector such as non-with light blocking layer and preparation method thereof |
| CN110047956B (en) * | 2019-04-25 | 2020-12-01 | 南京大学 | Non-isoplanar AlGaN-based Schottky type ultraviolet detector with light blocking layer and preparation method thereof |
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| CN108417662B (en) | 2023-06-09 |
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