CN107946400A - A kind of horizontal p n knot infrared detectors based on II class superlattices and preparation method thereof - Google Patents
A kind of horizontal p n knot infrared detectors based on II class superlattices and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 15
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- 150000002500 ions Chemical class 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 11
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- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 12
- 229910005542 GaSb Inorganic materials 0.000 claims description 11
- 238000012545 processing Methods 0.000 claims description 7
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- 238000002347 injection Methods 0.000 claims description 5
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- 229910001069 Ti alloy Inorganic materials 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 238000006392 deoxygenation reaction Methods 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 19
- 230000005611 electricity Effects 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000007547 defect Effects 0.000 description 9
- 239000013078 crystal Substances 0.000 description 6
- 239000007943 implant Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
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- 229910017115 AlSb Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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Abstract
A kind of horizontal p n knot infrared detectors based on II class superlattices and preparation method thereof, belong to semiconductor photoelectric device preparing technical field.The infrared detector includes substrate, cushion, II class superlattices and electrode layer.The method is as follows：Substrate is put into molecular beam epitaxial device vacuum chamber and is handled；1 ~ 2 μm of grown buffer layer；II class superlattices are formed on the buffer layer；P-type and n-type region are defined using photoresist mask on II class superlattices surface；It is 500 ~ 800nm to be injected separately into Be ions and Si the ions depth into II class superlattices to twoth area；In p-type and n-type area and the two centre position sputtered titanium billon, as p-type and N-shaped contact electrode and grounding electrode, transverse direction p n knots are formed.It is an advantage of the invention that：Material prepare it is relatively easy, without growing doped superlattice structure；In terms of device preparation, step etching is not required to, p-type and n-type electrode are in same plane, simplify manufacture craft and electricity line.
Description
Technical field
The invention belongs to semiconductor photoelectric device preparing technical field, and in particular to a kind of transverse direction based on II class superlattices
P-n junction infrared detector and preparation method thereof.
Background technology
Infrared detection technique is widely used in fields such as military affairs, special gas, space exploration exploration, safety monitorings.Its
Middle II classes super crystal lattice material causes extensive concern as third generation infrared detecting materials.Esaki in 1977 etc. proposes InAs/GaSb
The concept of II class superlattices infrared detectors.
The infrared detector of II classes superlattices is all based on vertical structure at present, especially longitudinal pn-junction or p-i-n junction,
InAs/GaSb superlattices are typical II classes superlattices, and the band structure of the two staggers completely, become II class band structures, two
Kind material alternating growth some cycles form superlattice structure, since the energy band of two kinds of materials staggers, electronics and sky in superlattices
Cave is limited in different materials, and the vertical transport of electronics and hole along the direction of growth need to pass through the interface of two kinds of materials,
More demanding interface quality, since tunnelling current caused by interface scattering and interface defect and crystal defect is device dark electricity
The main source of stream, reduces detectivity and the sensitivity of device, has seriously affected the performance of detector.Moreover, longitudinal device needs
To form table top by chemically or physically etching, during produce the defects of can also form tracking current or sidewall leakage stream.pn
Knot or p-i-n junction also need to carry out p-type and the N-shaped doping of high concentration, substantial amounts of lattice defect are caused in preparation process, and lead
Dark current is caused, in order to suppress defect and dark current, infrared detector need to limit application field in low-temperature working, it is necessary to freeze.
In recent years, II class super crystal lattice material grows up the infrared detector of many different structures.Such as：Traditional pn-junction
With p-i-n junction, p- π-M-n, complementary type barrier infrared detector etc., these structures need to carry out high concentration of p-type and N-shaped doping,
The defects of vertical structure needs to perform etching, generation forms the dark current sources such as side leakage current.In addition there are M types and W
The structures such as type, nineteen ninety-five Meyer et al. have developed infrared detector of the wave band in medium wave first, are W type structures（Appl.
Phys. Lett, 2009 (95): 023508）.Long-wave band can be realized by the detector with W type structures（Appl. Phys.
Lett. 2011 (98): 143501）.2009, Northwestern Univ USA B.M.Nguyen et al. reported one kind and is based on II class
The myriametric wave infrared detector of InAs/GaSb/AlSb super crystal lattice materials, using M structure as potential barrier（Appl. Phys.
Lett. 2009 (95): 183502）.These structures also need to add the third material so as to fulfill M types or W type band structures,
Complicated, growth cycle length is prepared, and these structures are prepared using longitudinal device as basic structure in carrier transport and device
All there are problem above for aspect.
The content of the invention
The purpose of the present invention is to solve existing infrared detector due to vertical structure growth and device prepared
The problem of defect being produced in journey and causing sensitivity and low detectivity, there is provided a kind of horizontal p-n junction based on II class superlattices is red
External detector and preparation method thereof, this method are also applied for having two class energy in addition to the II class superlattices for InAs/GaSb
The other materials of band structure.
To achieve the above object, the technical solution that the present invention takes is as follows：
A kind of horizontal p-n junction infrared detector based on II class superlattices, the infrared detector from bottom to top include substrate,
Cushion, II class superlattices；II class superlattices surface is divided into n-type area and p-type area, is noted respectively by ion in n-type area and p-type area
Enter method injection Si and Be elements and form highly doped conductive region, surface on n-type area surface and p-type area surface and between the two
Titanium electrode is deposited in region respectively, forms N-shaped contact electrode, p-type contact electrode and grounding electrode.
A kind of preparation method of the above-mentioned horizontal p-n junction infrared detector based on II class superlattices, the method are specific
Step is as follows：
Step 1：Substrate is put into molecular beam epitaxial device vacuum chamber, High-Temperature Deoxygenation processing 15min is carried out, then in V races member
3 ~ 5 min of degasification under plain steam protection；
Step 2：1 ~ 2 μm of the Grown cushion after step 1 processing；
Step 3：The II class superlattices in 100 ~ 200 cycles are grown on the buffer layer；
Step 4：N-type area and p-type area are defined using photoresist mask on II class superlattices surface of step 3, the two regions
It is square, 250 ~ 400 μm of size dimension；
Step 5：At room temperature, Be ions and Si ions are injected separately into II class superlattices to n-type area and p-type area, depth is
500 ~ 800nm, and 350 ~ 400 under inert gas shieldingoC carries out 15 ~ 60 min of annealing and eliminates implant damage；
Step 6：N-shaped contact electrode is defined on n-type area and the surface of p-type area and the two centre position by photo etched mask method
Area, p-type contact electrode district and grounding electrode area, n-type area and p-type area are square, and size dimension is 200 ~ 300 μm, and
These region sputtered titanium billons, as N-shaped contact electrode, p-type contact electrode and grounding electrode, form horizontal p-n junction.
It is of the invention to be relative to the beneficial effect of the prior art：
（1）Material prepare it is relatively easy, without growing doped superlattice structure；
（2）In terms of device preparation, step etching is not required to, p-type and n-type electrode are in same plane, simplify manufacture craft and electricity
Learn line；
（3）Carrier lateral transport in film, transmission rate is fast, and mobility is high, can improve response speed and quantum efficiency.
（4）In different materials, mobility is big for II type band structures, electronics and hole, without across material interface；
（5）Horizontal p-n junction optical detector, avoids the side face defects and leakage current produced in longitudinal element manufacturing；
（6）Photoetching technique ion implantation technique forms p-type and N-shaped in the material, rather than is doped in growth course.
Brief description of the drawings
Fig. 1 is horizontal pn-junction infrared detector longitudinal profile structure schematic；
Fig. 2 is horizontal pn-junction infrared detector surface electrode schematic diagram；
Fig. 3 is horizontal pn-junction infrared detector circuit connection diagram.
Embodiment
Technical scheme is further described with reference to the accompanying drawings and examples, but is not limited thereto,
It is every to technical solution of the present invention technical scheme is modified or replaced equivalently, without departing from the spirit and scope of technical solution of the present invention,
It should all cover in protection scope of the present invention.
The lateral transfer rate of carrier is far longer than vertical migration rate in horizontal p-n junction, be conducive to obtain quick response and
High quantum efficiency, and due to inhibiting the generation of defect and dark current, operating temperature can be improved.The devices use II of the present invention
Class super crystal lattice material prepares horizontal pn-junction and realizes infrared acquisition.Horizontal pn-junction is prepared using ion implanting and photoetching technique, is passed through
Additional backward voltage, electronics and hole can be attracted to counter electrode respectively, further suppress compound, the raising in electronics and hole
Detectivity.It can also be reduced in longitudinal pn-junction due under quality caused by the doping of super crystal lattice material using horizontal pn-junction at the same time
Drop problem, also reduces the tunnelling current caused by superlattices interface and dislocation when carrier longitudinally transmits, helps to improve
Device operating temperature.The present invention is used as infrared acquisition active coating, such superlattices electronics and hole difference by the use of II classes superlattices
It is limited in different materials, the compound of carrier can be reduced.Photoetching technique and ion implantation technique are utilized on superlattices surface
To superlattices inside implanted with p-type and n-type dopant Be and Si, on superlattices surface, electrode evaporation forms horizontal pn-junction.II classes surpass
Lattice absorption infrared light produces light induced electron and hole, due in II class superlattices electronics and hole be limited in respectively it is different
In material layer, horizontal pn-junction can be by additional direction voltage, and attracting electronics, hole to n-type area, forms photoelectric current, obtain to p-type area
Infrared acquisition signal is obtained, shows that there is good application prospect in terms of infrared light detecting.
Embodiment one：What present embodiment was recorded is a kind of infrared spy of horizontal p-n junction based on II class superlattices
Device is surveyed, the infrared detector includes substrate 1, cushion 2, II class superlattices 3 from bottom to top；II class superlattices, 3 surface point
For n-type area 4 and p-type area 5, formed respectively by ion injection method injection Si and Be elements in n-type area 4 and p-type area 5 highly doped
Conductive region, surface region on 4 surface of n-type area and 5 surface of p-type area and between the two are deposited titanium electrode, form N-shaped respectively
Contact electrode 6, p-type contact electrode 7 and grounding electrode 8.
Embodiment two：A kind of horizontal p-n junction based on II class superlattices described in embodiment one is infrared
Detector, the II class superlattices（3）For InAs/ (In) GaSb superlattices, InAs/InAsSb superlattices, (In) GaAs/
GaAsSb superlattices.
Embodiment three：A kind of horizontal p-n junction based on II class superlattices described in embodiment one or two
The preparation method of infrared detector, the method comprise the following steps that：
Step 1：Substrate 1 is put into molecular beam epitaxial device vacuum chamber, High-Temperature Deoxygenation processing 15min is carried out, then in V races
3 ~ 5 min of degasification under element steam protection；
Step 2：21 ~ 2 μm of grown buffer layer on substrate 1 after step 1 processing；
Step 3：The II class superlattices 3 in 100 ~ 200 cycles are grown on the buffer layer 2, specifically according to II class superlattices 3
Species difference can grow the InAs layers in 100 ~ 200 cycles（7~13 ML）With GaSb layers（7 ML）, II class superlattices 3 are formed, also
The InAs layers in 100 ~ 200 cycles can be grown（7~13 ML）With InAsSb layers（7 ML）, form II class superlattices 3；
Step 4：N-type area 4 and p-type area 5 are defined using photoresist mask on II class superlattices, 3 surface of step 3, the two areas
Domain is square, 250 ~ 400 μm of size dimension；
Step 5：At room temperature, Si ions and Be ions are injected separately into II class superlattices 3 to n-type area 4 and p-type area 5, it is deep
Spend for 500 ~ 800nm（Depending on number of superlattice cycles and gross thickness）, and 350 ~ 400 under inert gas shieldingoC anneals
Handle 15 ~ 60 min and eliminate implant damage；
Step 6：N-shaped contact electricity is defined on the surface and the two centre position of n-type area 4 and p-type area 5 by photo etched mask method
Polar region, p-type contact electrode district and grounding electrode area, n-type area and p-type area are square, and size dimension is 200 ~ 300 μm, and
In these region sputtered titanium billons, as N-shaped contact electrode 6, p-type contact electrode 7 and grounding electrode 8, transverse direction p-n is formed
Knot.As illustrated in fig. 1 and 2.
It is i.e. detectable that line is carried out at p-type and n-type electrode, passes through external backward voltage, i.e. one side joint positive voltage of N-shaped, p
Type side connects backward voltage, detects photoelectric current.As shown in Figure 3.
Embodiment four：The horizontal p-n junction infrared acquisition based on II class superlattices described in embodiment three
The preparation method of device, in step 5, the carrier concentration of p-type area 5 and n-type area 4 is equal after the Be ions and Si ion implantings
For 1017~1018/cm3。
Embodiment five：The horizontal p-n junction infrared acquisition based on II class superlattices described in embodiment three
The preparation method of device, in step 6, in the titanium alloy, the thickness of titanium is 50nm, and golden thickness is 200nm.
Embodiment 1：
Step 1：GaSb substrates 1 are put into molecular beam epitaxial device vacuum chamber, 530oC carries out 15 min of deoxidation treatment,
Then 560 are warming up under V group element Sb steam protectionso5 min of C degasification；
Step 2：It is cooled to 520oC grows 21 μm of GaSb cushions on the substrate 1 after step 1 processing；
Step 3：The II class superlattices 3 of InAs/GaSb in 100 cycles of growth on the buffer layer 2, wherein InAs layers（7 ML）With
GaSb layers（7 ML）, form II class superlattices 3；
Step 4：N-type area 4 and p-type area 5 are defined using photoresist mask on II class superlattices, 3 surface of step 3, the two areas
Domain is square, 300 μm of size dimension；
Step 5：At room temperature, Si ions and Be ions are injected separately into II class superlattices 3 to n-type area 4 and p-type area 5, it is deep
Spend for 500nm, and under nitrogen protection 400oC carries out annealing 30min and eliminates implant damage；Be ions and Si ion implantings
The carrier concentration of p-type area 5 and n-type area 4 is 5 × 10 afterwards17/cm3。
Step 6：N-shaped is defined by photo etched mask method on the surface and the two centre position of n-type area 4 and p-type area 5 to connect
Electric shock polar region, p-type contact electrode district and grounding electrode area, n-type area and p-type area are square, and size dimension is 200 μm, and
In these region sputtered titanium billons, as N-shaped contact electrode 6, p-type contact electrode 7 and grounding electrode 8, in titanium alloy, titanium
Thickness be 50nm, golden thickness is 200nm.Horizontal p-n junction is formed, as depicted in figs. 1 and 2.
It is i.e. detectable that line is carried out at p-type and n-type electrode, passes through external backward voltage, i.e. one side joint positive voltage of N-shaped, p
Type side connects backward voltage, detects photoelectric current.As shown in Figure 3.
Claims (5)
- A kind of 1. horizontal p-n junction infrared detector based on II class superlattices, it is characterised in that：The infrared detector is under And above include substrate（1）, cushion（2）, II class superlattices（3）；II class superlattices（3）Surface is divided into n-type area（4）And p-type area （5）, in n-type area（4）And p-type area（5）Si and Be elements are injected by ion injection method respectively and form highly doped conductive region, In n-type area（4）Surface and p-type area（5）Titanium electrode is deposited in surface and surface region between the two respectively, forms N-shaped contact Electrode（6）, p-type contact electrode（7）And grounding electrode（8）.
- A kind of 2. horizontal p-n junction infrared detector based on II class superlattices according to claim 1, it is characterised in that： The II class superlattices（3）For InAs/（In）GaSb superlattices, InAs/InAsSb superlattices,（In）GaAs/GaAsSb surpasses Lattice.
- 3. a kind of preparation method of the horizontal p-n junction infrared detector based on II class superlattices described in claim 1 or 2, its It is characterized in that：The method comprises the following steps that：Step 1：By substrate（1）Put into molecular beam epitaxial device vacuum chamber, High-Temperature Deoxygenation processing 15min is carried out, then in V 3 ~ 5 min of degasification under race's element steam protection；Step 2：Substrate after step 1 processing（1）Upper grown buffer layer（2）1~2μm；Step 3：In cushion（2）The II class superlattices in 100 ~ 200 cycles of upper growth（3）；Step 4：In II class superlattices of step 3（3）Surface defines n-type area using photoresist mask（4）And p-type area（5）, this Two regions are square, 250 ~ 400 μm of size dimension；Step 5：At room temperature, to n-type area（4）And p-type area（5）Si ions and Be ions are injected separately into II class superlattices（3） In, depth is 500 ~ 800nm, and 350 ~ 400 under inert gas shieldingoC carries out 15 ~ 60min of annealing and eliminates injection damage Wound；Step 6：By photo etched mask method in n-type area（4）And p-type area（5）Surface and the two centre position define N-shaped and connect Electric shock polar region, p-type contact electrode district and grounding electrode area, n-type area and p-type area are square, and size dimension is 200 ~ 300 μ M, and in these region sputtered titanium billons, electrode is contacted as N-shaped（6）, p-type contact electrode（7）And grounding electrode（8）, shape Into horizontal p-n junction.
- 4. the preparation method of the horizontal p-n junction infrared detector according to claim 3 based on II class superlattices, its feature It is：In step 5, p-type area after the Be ions and Si ion implantings（5）And n-type area（4）Carrier concentration be 1017 ~1018/cm3。
- 5. the preparation method of the horizontal p-n junction infrared detector according to claim 3 based on II class superlattices, its feature It is：In step 6, in the titanium alloy, the thickness of titanium is 50nm, and golden thickness is 200nm.
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| CN111668328A (en) * | 2020-06-22 | 2020-09-15 | 三明学院 | Novel lateral pn junction photoelectric detector |
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| CN105161551A (en) * | 2015-08-14 | 2015-12-16 | 哈尔滨工业大学 | Surface passivation method capable of reducing dark current of InAs/GaSb superlattice long-wave infrared detector |
| CN105405916A (en) * | 2015-12-22 | 2016-03-16 | 中国科学院半导体研究所 | Silicon-based wide spectrum detector and preparation method therefor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111668328A (en) * | 2020-06-22 | 2020-09-15 | 三明学院 | Novel lateral pn junction photoelectric detector |
| CN111668328B (en) * | 2020-06-22 | 2022-03-15 | 三明学院 | Novel lateral pn junction photoelectric detector |
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