CN109273555A - A kind of photoelectron injection type X-ray detection device and preparation method thereof - Google Patents
A kind of photoelectron injection type X-ray detection device and preparation method thereof Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a kind of photoelectron injection type X-ray detection devices; including substrate, gate electrode, gate insulation layer, channel semiconductor, source electrode, drain electrode, source electrode separation layer, drain electrode separation layer, X-ray photoconductive layer, top electrode and protective layer, the top electrode is Ohmic contact or Schottky contacts with the contact of X-ray photoconductive layer.The invention also discloses the preparation methods of the photoelectron injection type X-ray detector.Photoelectron injection type X-ray detection device of the invention by using vertical stack device structure design, using mobility channel semiconductor material and highly sensitive X-ray photoconductive material, it can be realized highly sensitive rapid X-ray detection, the device has the function of sensor, amplifier and switch simultaneously, it is applied in X-ray detection and imaging the response speed and sensitivity that can effectively improve plate X detector, realizes fast hi-resolution x-ray imaging.
Description
Technical field
The invention belongs to technical field of semiconductor device, and in particular to a kind of photoelectron injection type X-ray detection device and
Preparation method.
Background technique
Since X-ray is found, x-ray imaging is widely used industrial detection, safety inspection and medical image
Etc. various fields.Real-time imaging system can help people to obtain the multidate information of observed object, become X-ray at
The important directions developed as technology.X-ray detector is the important component of x-ray imaging system, sensitivity and response
Ability directly decides the quality and speed of imaging.
Due to device architecture and material properties, there is only a few X-ray detector currently on the market dynamic X to penetrate
Line imaging function.Realize dynamic X-ray imaging, it is necessary to novel device architecture is designed, in conjunction with the semiconductor of high mobility
Material and the advantages of to the photoconductive material of X-ray high sensitivity, so that device not only has the high sensitivity to X-ray,
The ability for having quick response.
Summary of the invention
To solve the above-mentioned problems, the first object of the present invention is: providing a kind of photoelectron injection type X-ray detector
Part, the X-ray detection device have the function of sensor, amplifier and switch simultaneously, are applied to X-ray detection and imaging
In can effectively improve the response speed and sensitivity of plate X detector, realize fast hi-resolution x-ray imaging.
To realize the above-mentioned technical purpose, the invention adopts the following technical scheme:
A kind of photoelectron injection type X-ray detection device, comprising:
Substrate；
Gate electrode is formed over the substrate；
Gate insulation layer is formed on gate electrode；
Channel semiconductor is formed on gate insulation layer
Source electrode and drain electrode is respectively formed on the gate insulation layer and channel semiconductor；
Source electrode separation layer and drain electrode separation layer are respectively formed on the source electrode and drain electrode layer；
X-ray photoconductive layer is formed and is covered on channel semiconductor, source electrode separation layer and drain electrode separation layer；
Top electrode is formed on the X-ray photoconductive layer, and is Ohmic contact with the contact of X-ray photoconductive layer
Or Schottky contacts；
Protective layer is formed on the upper electrode layer.
The photoelectron injection type X-ray detection device of the embodiment of the present invention, by forming one layer on X-ray photoconductive layer
Top electrode, in use, being biased in top electrode, to form electric field in X-ray photoconductive layer.The presence of the electric field makes
Generated electron-hole pair is rapidly separated when obtaining device by x-ray bombardment, and one of carrier is injected by electric field
In channel semiconductor, so that the carrier concentration in channel semiconductor increases, effectively increase photoelectric current, and improve photoelectricity
The photoelectric characteristic of sub- injection type X-ray detection device, to improve photoelectron injection type X-ray detection device of the present invention
Sensitivity.In particular, channel semiconductor is prepared using the semiconductor material of high mobility, more obtain the response speed of device
Increase to effective.
Further, the gate insulation layer covers the gate electrode and substrate.
Further, the width of the channel semiconductor is greater than the width of bottom gate electrode and is less than the width of gate insulation layer
Degree.
Further, the source electrode and drain electrode portion cover the channel semiconductor and with the bottom gate electrode
With a crossover region.A crossover region is formed by drain electrode, source electrode and bottom gate electrode, so that the electricity in channel semiconductor
Field distribution is more preferably.
Further, source electrode and drain electrode is completely covered in the source electrode separation layer and drain electrode separation layer respectively.
Further, the top electrode covers entire X-ray photoconductive layer.
In order to enable enabling photo-generated carrier to use up from top electrode to electric fields uniform caused by X-ray photoconductive layer
Being collected more than possible by channel semiconductor, forms photosignal, and the top electrode of the embodiment of the present invention covers entire X-ray photoelectricity
Conducting shell.Certainly, the top electrode can also partial mulching X-ray photoconductive layer, but photo-generate electron-hole pairs when partial mulching
Separating capacity it is then opposite weaken, light responsing sensitivity also can accordingly be declined.
Further, the protective layer directly, is completely covered on top electrode upper surface.
Further, when the top electrode and the contact of X-ray photoconductive layer are Ohmic contact, top electrode by gold, silver,
Copper, aluminium, molybdenum, nickel, tin indium oxide, indium zinc oxide, electrically conducting transparent plastics, any one or more in conductive compound are made；
When the top electrode is Schottky contacts with the contact of X-ray photoconductive layer, top electrode is made of heavily-doped semiconductor material
And PN junction is formed with photoconductive layer.Namely the top electrode selects the material with good electric conductivity to have, and is easy in this way at top
Biggish electric field is formed, semiconductor is made to generate more carriers.
Further, the channel semiconductor organic is led by amorphous silicon, monocrystalline silicon, polysilicon, indium gallium zinc oxide or partly
One of body material several is made.Semiconductor material mobility used by the present embodiment is higher, and preparation process is simple,
Cost is lower, can not only effectively improve response device speed, additionally it is possible to so that production cost reduces.In particular, the channel half
The carrier concentration of conductor layer changes with the size variation of X dosage, higher to X-ray absorption and transfer efficiency, to X-ray
According to response it is sensitive larger.
Further, the material of the X-ray photoconductive layer is to include amorphous selenium, lead oxide, mercuric iodixde, first ammonia iodate
Any one or more of the direct X-ray detection material of lead, antimony zinc cadmium (CZT) or perovskite.
The second object of the present invention is to provide a kind of preparation method of photoelectron injection type X-ray detection device, including with
Lower step:
Gate electrode is prepared on substrate；
Preparation covers the gate insulation layer of the substrate and gate electrode；
Channel semiconductor is prepared on the gate insulation layer；
Source electrode and drain electrode, the source electrode and drain electrode and the channel semiconductor are prepared on the gate insulation layer
Crossover region is respectively provided between layer and gate electrode；
Source electrode separation layer and drain electrode separation layer, the source electrode separation layer and leakage are prepared on the source and drain electrodes
Source electrode and drain electrode is completely covered in electrode isolation layers respectively；
X-ray photoconductive layer is prepared on channel semiconductor, source electrode separation layer and drain electrode separation layer, the X is penetrated
Linear light conductance layer covers entire channel semiconductor, source electrode separation layer and drain electrode separation layer；
Preparation covers the top electrode of entire X-ray photoconductive layer on X-ray photoconductive layer, described to power on extremely conductor material
Material or heavily-doped semiconductor material；
The method of using plasma etching carries out the aperture of electrode, so that electrode is exposed.
Further, described to prepare gate electrode on substrate specifically: to be grown using sputter coating method on the surface of substrate
One layer of metallic film, and the metallic film is photo-etched into predetermined pattern, gate electrode is formed through over etching.
Further, the preparation covers the gate insulation layer of the substrate and gate electrode specifically: deposits work using film
Skill deposits to form the gate insulation layer for covering the substrate and gate electrode in the upper surface of gate electrode.
Further, described that channel semiconductor is prepared on gate insulation layer specifically: using thin film deposition processes in grid
The upper surface depositing trench semiconductor material of insulating layer, and channel semiconducting material is photo-etched into predetermined pattern, it is formed through over etching
Channel semiconductor.
Further, source electrode and drain electrode is prepared on the gate insulation layer specifically: using sputter coating method in grid
The upper surface of insulating layer and channel semiconductor grows one layer of metallic film, and the metallic film is photo-etched into predetermined pattern,
Form source electrode and drain electrode.
Further, the source electrode separation layer processed on source electrode and drain electrode layer and drain electrode separation layer specifically:
Using thin film deposition processes, deposit to form the covering source electrode and drain electrode layer in the upper surface of source electrode and drain electrode layer
One layer insulating, then it is photo-etched into predetermined pattern, eventually form source electrode separation layer and drain electrode separation layer.
Further, described that X-ray photoconductive layer is prepared on source electrode separation layer and drain electrode separation layer specifically: to adopt
It deposits to form X-ray in the upper surface of source electrode separation layer, drain electrode separation layer and channel semiconductor with thin film deposition processes
Photoconductive layer.
Further, the preparation covers the top electrode of entire X-ray photoconductive layer specifically: is existed using sputter coating method
The surface of the X-ray photoconductive layer grows one layer of conductor material and forms top electrode；Or heavy doping is grown using ion implantation
Semiconductor material forms top electrode.
Further, the conductor material is gold, silver, copper, aluminium, molybdenum, nickel, tin indium oxide, indium zinc oxide, electrically conducting transparent modeling
Material, any one or more in conductive compound.
Further, the channel semiconductor material is amorphous silicon, polysilicon, indium gallium zinc oxide or organic semiconducting materials
In any one or more.
Further, the material of the X-ray photoconductive layer is to include amorphous selenium, lead oxide, mercuric iodixde, first ammonia iodate
Any one or more in the direct X-ray detection material of lead, antimony zinc cadmium (CZT) or perovskite.
Detailed description of the invention
Fig. 1 is the schematic cross-section of photoelectron injection type X-ray detection device of the present invention；
Fig. 2 is photoelectron injection type X-ray detection device of the present invention equivalent circuit diagram under the conditions of roentgenogram；
Fig. 3 is to add various dose x-ray bombardment and be not added under X-ray, photoelectron injection type X-ray of the present invention
The curve of output schematic diagram of sensitive detection parts.
Specific embodiment
Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings, it should be understood that preferred reality described herein
Apply example only for the purpose of illustrating and explaining the present invention and is not intended to limit the present invention.
Photoelectron injection type X-ray detection device of the present invention can be used for preparing direct X-ray detector.
Embodiment one
Please refer to Fig. 1, the photoelectron injection type X-ray detection device of the embodiment of the present invention includes: substrate 11；Grid electricity
Pole 12 is formed on the substrate 11；Gate insulation layer 13 is formed on gate electrode 12；Channel semiconductor 16, is formed in
On the gate insulation layer 13；Source electrode 14 and drain electrode 15 are formed on institute's channel semiconductor 14 and gate insulation layer 13；Source electricity
Pole separation layer 18 and drain electrode separation layer 17 are formed on the source electrode 14 and drain electrode 15.X-ray photoconductive layer 19, shape
At and be covered on the source electrode separation layer 18 and drain electrode separation layer 17 and channel semiconductor 16；Top electrode 110, shape
At on the X-ray photoconductive layer 19, the top electrode is Ohmic contact or schottky junctions with the contact of X-ray photoconductive layer
Touching；Protective layer 111 is formed in the top electrode 110.
Wherein, when the top electrode and the contact of X-ray photoconductive layer are Ohmic contact, the top electrode by gold, silver,
Copper, aluminium, molybdenum, nickel, tin indium oxide, indium zinc oxide, electrically conducting transparent plastics, any one or more in conductive compound are made.
When the top electrode is Schottky contacts with the contact of X-ray photoconductive layer, the top electrode is by heavily-doped semiconductor material
It is made and forms PN junction with photoconductive layer.
The photoelectron injection type X-ray detection device of the embodiment of the present invention, by forming one on X-ray photoconductive layer 19
The top electrode 110 that layer is formed by conductor material or heavily-doped semiconductor material, in use, apply bias-voltage in top electrode 110,
Just electric field is formed in X-ray photoconductive layer 19, the electron hole pair that the presence of the electric field generates X-ray interaction is fast
Speed separation, increases the service life of photo-generated carrier, so that a kind of carrier is injected into channel semiconductor 16 by electric field.Work as device
Part works at sub-threshold region, can effectively increase photoelectric current, and the photoelectricity for improving photoelectron injection type X-ray detection device is special
Property, to enhance the sensitivity of X-ray.Simultaneously as material selected by channel semiconductor has biggish mobility, make
It obtains of the invention with faster response speed.And this structure has the function of switch, amplifier, sensor and capacitor simultaneously
Energy.
It should be understood that photoelectron injection type X-ray detection device described in the present embodiment has photoelectric sensing simultaneously
The function of device and optoelectronic switch, i.e. the photoelectron injection type X-ray detection device of the present embodiment can not only be used for optoelectronic switch use,
It can also be used as photoelectric sensor use.
As shown in Figure 1, the gate insulation layer 13 of the present embodiment covers the gate electrode 12 and substrate 11, glass is can be selected in substrate 11
Glass or plastic material.
Source electrode 14 and drain electrode 15 have a crossover region with gate electrode 12 respectively.The crossover region makes channel semiconductor
In field distribution more preferably.It should be understood that having a crossover region, drain electrode between the source electrode 14 and the gate electrode
Also there is a crossover region between 15 and the gate electrode.
In order to enable from top electrode to the electric fields uniform of channel semiconductor, the top electrode 110 of the embodiment of the present invention is covered
Entire X-ray photoconductive layer 19.Certainly, top electrode can also partial mulching X-ray photoconductive layer 19, but partial mulching time
The separating capacity of raw electron hole pair is then opposite to be weakened, and also can accordingly be declined to the response sensitivity of X-ray.
As shown in Figure 1, the lower surface of gate electrode 12 is connected with substrate 11, the lower surface phase of upper surface and gate insulation layer 13
Even；The upper surface of gate insulation layer 13 is connected with the lower surface of channel semiconductor 16；Source electrode 14,15 lower surface of drain electrode difference
It is connected with the upper surface of gate insulation layer 13, channel semiconductor 16；Source electrode 14, drain electrode 15 upper surface respectively with source electrode
Separation layer 18, the lower surface of drain electrode separation layer 17 are connected, the upper surface and X of source electrode separation layer 18 and drain electrode separation layer 17
The upper surface of the lower surface of ray photoelectric conducting shell 19, X-ray photoconductive layer 19 is connected with the lower surface of top electrode 110, top electrode
110 upper surface is connected with the lower surface of protective layer 111.
Wherein, the conductor material of the top electrode is gold, silver, copper, aluminium, molybdenum, nickel, tin indium oxide, indium zinc oxide, transparent leads
Any one or more in the materials such as electric plastics, conductive compound.In the present embodiment, the gold, silver, copper, aluminium, molybdenum, nickel,
The materials such as tin indium oxide, indium zinc oxide, electrically conducting transparent plastics, conductive compound and heavily-doped semiconductor material are transparent
Or semi-transparent conductor material, not only there is excellent electric conductivity, is easy to form biggish electric field at top, and enable to light
Small according to losing, the number of photons that semiconductor interface is subject to is more.
The material of the channel semiconductor 16 is monocrystalline silicon, polysilicon, indium gallium zinc oxide or organic semiconducting materials etc.
One or several kinds.The electron mobility of channel semiconductor 16 is higher, and the mobility of used semiconductor material is higher, system
Standby simple process, cost is lower, can not only effectively improve device performance, moreover it is possible to reduce production cost.
The material of the X-ray photoconductive layer 19 is to include amorphous selenium, lead oxide, mercuric iodixde, first ammonia lead iodide, antimony zinc cadmium
(CZT) or the directly X-ray detection material such as perovskite any one or more.The carrier concentration of X-ray photoconductive layer 19
Change with the variation of x-ray dose, and to X-ray sensitivity with higher.
12 aluminium of gate electrode, molybdenum, chromium, titanium, nickel, metal and tin indium oxide, indium zinc oxide, electrically conducting transparent plastics
Or any one or more material preparation in electro-conductive glass.
The source electrode 14 and drain electrode 15 are selected as any one or more system in the materials such as aluminium, molybdenum, chromium, titanium, nickel
It is standby.Gate electrode 12, source electrode 14 and drain electrode 15 select the material preparation that conductivity is high, can effectively reduce noise.
The gate insulation layer 13, source electrode separation layer 18 and drain electrode separation layer 17 select amorphous silicon, silicon nitride, titanium dioxide
Any one or more in silicon materials is prepared.
The material of the substrate is glass and/or plastics.
Photoelectron injection type X-ray detection device described in the present embodiment has X ray sensor, switch and amplification simultaneously
The function of device.
Fig. 2 is the equivalent circuit diagram of photoelectron injection type X-ray detection device, it is seen that the present invention can be equivalent to X-ray light
The integrated device of conductance and thin film transistor (TFT).When x-ray bombardment, carrier concentration in X-ray photoconduction can be made to increase, electricity
Son can the electric field caused by top electrode 110 under the action of be admitted to thin film transistor (TFT) conducting channel in, it is brilliant to change film
The size of current of body pipe.When top electrode 110, gate electrode 12 and source electrode 14 add suitable piece bias, and film transistor device
Output electric current be less than A when, device of the present invention is in close state；When exporting electric current more than or equal to A, institute of the present invention
It is in the open state to state device, switch can be played the role of.For example, in actual circuit, can set when the thin film transistor (TFT) device
When part exports electric current less than 1nA, which is in close state, when film transistor device output electric current is greater than
Or when being equal to 1nA, the film transistor device is in the open state.
Wherein, the film transistor device of the embodiment of the present invention is also used as X ray sensor use.
As shown in figure 3, in a certain range, when the film of the x-ray bombardment using various dose to the embodiment of the present invention
When transistor device, electron concentration increases in channel semiconductor, so that cut-in voltage reduces, output electric current increases.X-ray
The dosage of irradiation is bigger, and the voltage of gate electrode 12 required for device is opened is just smaller.And identical 12 voltage V of gate electrodeBGUnder, X
Roentgen dose X is bigger, the electric current I that drain electrode 15 exportsdsJust bigger.Implementation of the present invention is irradiated to by using different x-ray dosage
The film transistor device of example, can be obtained the output electric current of different source electrodes 14.If obtained with different x-ray exposure dose
Corresponding current establish database, under various circumstances, by read film transistor device be exposed under different light environments
Current strength, so that it may the x-ray dose under the environment is calculated, film transistor device at this time just plays photoelectric sensing
The effect of device.When the top electrode 110 of thin film transistor (TFT), source electrode 15, when drain electrode 16 and electrode 12 apply certain bias, X is penetrated
When line dosage is in E1 by E0 variation, so that the output electric current of transistor increases rapidly, play the role of amplifier.
The production method that the X-ray detection device of the embodiment of the present invention is described in detail below, specifically includes following
Step:
(1) gate electrode is prepared on substrate；Specifically: one layer of metal foil is grown on the surface of substrate using sputter coating method
Film, and the metallic film is photo-etched into predetermined pattern, gate electrode is formed through over etching.
(2) preparation covers the gate insulation layer of the substrate and gate electrode, specifically: thin film deposition processes is utilized, in grid electricity
The upper surface of pole deposits the gate insulation layer to be formed and cover the substrate and gate electrode.
(3) channel semiconductor is prepared on gate insulation layer；Specifically: using thin film deposition processes in the upper of gate insulation layer
Above-mentioned channel semiconducting material is photo-etched into predetermined pattern by surface depositing trench semiconductor material, is formed channel through over etching and is partly led
Body layer.
(4) source electrode and drain electrode is prepared on the gate insulation layer；Specifically: using sputter coating method in gate insulation layer
And the upper surface of channel semiconductor grows one layer of metallic film, and the metallic film is photo-etched into predetermined pattern, forms source
Electrode and drain electrode are respectively provided with friendship between the source electrode and drain electrode being lithographically formed and the channel semiconductor and gate electrode
Folded area.
(5) source electrode separation layer and drain electrode separation layer processed on source electrode and drain electrode layer；Specifically: heavy using film
Product technique, deposits to form the layer insulating for covering the source electrode and drain electrode in the upper surface of source electrode and drain electrode, adopt
With predetermined pattern is photo-etched into, it is respectively formed source electrode separation layer and drain electrode separation layer.
(6) X-ray photoconductive layer is prepared on channel semiconductor, source electrode separation layer and drain electrode separation layer；Specifically
Ground: it deposits to form X in the upper surface of source electrode separation layer, drain electrode separation layer and channel semiconductor using thin film deposition processes
Ray photoelectric conducting shell.
(7) preparation covers the top electrode of entire X-ray photoconductive layer；Specifically: using sputter coating method in the X-ray
The surface of photoconductive layer grows one layer of conductor material and forms top electrode；Or heavily-doped semiconductor material is grown using ion implantation
Form top electrode.
(8) preparation covers the protective layer of entire top electrode；Specifically: thin film deposition processes are utilized, in the upper table of top electrode
Face deposits to form the covering lining electrode protecting layer.
(9) the methods of using plasma etching carries out the aperture of electrode, so that electrode is exposed.
Wherein, the conductor material be gold, silver, copper, aluminium, molybdenum, nickel, tin indium oxide, indium zinc oxide, electrically conducting transparent plastics,
Any one or more in conductive compound.The material of the channel semiconductor is amorphous selenium, lead oxide, mercuric iodixde, calcium
Any one or more in perovskite like structure semiconductor material.The material of the X-ray photoconductive layer be amorphous selenium, lead oxide,
Mercuric iodixde, any one or more in perovskite structure semiconductor material.
Embodiment two
Photoelectron injection type X-ray detection device structure of the present invention can be used and prepare direct X-ray flat panel detector.
Wherein, structure, working principle and the preparation process and embodiment of photoelectron injection type X-ray detection device described in the present embodiment
Technical solution described in 1 is essentially identical, and the main distinction is: when preparing direct X-ray flat panel detector, needing to implement
Photoelectron injection type X-ray detector described in example 1 is prepared into array.
The above described is only a preferred embodiment of the present invention, be not intended to limit the present invention in any form, therefore
Without departing from the technical solutions of the present invention, according to the technical essence of the invention it is to the above embodiments it is any modification,
Equivalent variations and modification, all of which are still within the scope of the technical scheme of the invention.
Claims (21)
1. a kind of photoelectron injection type X-ray detection device characterized by comprising
Substrate；
Gate electrode is formed over the substrate；
Gate insulation layer is formed on gate electrode；
Channel semiconductor is formed on gate insulation layer
Source electrode and drain electrode is respectively formed on the gate insulation layer and channel semiconductor；
Source electrode separation layer and drain electrode separation layer are respectively formed on the source electrode and drain electrode layer；
X-ray photoconductive layer is formed and is covered on channel semiconductor, source electrode separation layer and drain electrode separation layer；
Top electrode is formed on the X-ray photoconductive layer, and is Ohmic contact or Xiao with the contact of X-ray photoconductive layer
Te Ji contact；
Protective layer is formed on the upper electrode layer.
2. photoelectron injection type X-ray detection device according to claim 1, it is characterised in that:
The gate insulation layer covers the gate electrode and substrate.
3. photoelectron injection type X-ray detection device according to claim 1, it is characterised in that:
The width of the channel semiconductor is greater than the width of bottom gate electrode and is less than the width of gate insulation layer.
4. photoelectron injection type X-ray detection device according to claim 1, it is characterised in that:
The source electrode and drain electrode portion cover the channel semiconductor and have a crossover region with the bottom gate electrode.
5. photoelectron injection type X-ray detection device according to claim 1, it is characterised in that: the source electrode isolation
Source electrode and drain electrode is completely covered in layer and drain electrode separation layer respectively.
6. photoelectron injection type X-ray detection device according to claim 1, it is characterised in that:
The top electrode covers entire X-ray photoconductive layer.
7. photoelectron injection type X-ray detection device according to claim 1, it is characterised in that:
The protective layer directly, is completely covered on top electrode upper surface.
8. photoelectron injection type X-ray detection device described in any claim according to claim 1~7, it is characterised in that:
When the top electrode and the contact of X-ray photoconductive layer are Ohmic contact, the top electrode by gold, silver, copper, aluminium, molybdenum,
Nickel, tin indium oxide, indium zinc oxide, electrically conducting transparent plastics, any one or more in conductive compound are made；
When the top electrode is Schottky contacts with the contact of X-ray photoconductive layer, the top electrode is by heavily-doped semiconductor
Material is made and forms PN junction with photoconductive layer.
9. photoelectron injection type X-ray detection device according to claim 8, it is characterised in that:
The channel semiconductor is by one of amorphous silicon, monocrystalline silicon, polysilicon, indium gallium zinc oxide or organic semiconducting materials
Or it several is made.
10. photoelectron injection type X-ray detection device according to claim 1, it is characterised in that:
The material of the X-ray photoconductive layer is to include amorphous selenium, lead oxide, mercuric iodixde, first ammonia lead iodide, antimony zinc cadmium or calcium titanium
Any one or more of the direct X-ray detection material of mine.
11. the production method of photoelectron injection type X-ray detection device as described in claim 1, which is characterized in that including with
Lower step:
Gate electrode is prepared on substrate；
Preparation covers the gate insulation layer of the substrate and gate electrode；
Channel semiconductor is prepared on the gate insulation layer；
Prepare source electrode and drain electrode on the gate insulation layer, the source electrode and drain electrode and the channel semiconductor and
Crossover region is respectively provided between gate electrode；
Source electrode separation layer and drain electrode separation layer, the source electrode separation layer and drain electrode are prepared on the source and drain electrodes
Source electrode and drain electrode is completely covered in separation layer respectively；
X-ray photoconductive layer, the X-ray light are prepared on channel semiconductor, source electrode separation layer and drain electrode separation layer
Conductance layer covers entire channel semiconductor, source electrode separation layer and drain electrode separation layer；
Preparation covers the top electrode of entire X-ray photoconductive layer on X-ray photoconductive layer, it is described power on extremely conductor material or
Heavily-doped semiconductor material；
Preparation covers the protective layer of entire top electrode；
The method of using plasma etching carries out the aperture of electrode, so that electrode is exposed.
12. production method according to claim 11, which is characterized in that described to prepare gate electrode on substrate specifically:
One layer of metallic film is grown on the surface of substrate using sputter coating method, and the metallic film is photo-etched into predetermined figure
Shape forms gate electrode through over etching.
13. production method according to claim 11, which is characterized in that the preparation covers the substrate and gate electrode
Gate insulation layer specifically:
It deposits to form the gate insulation layer for covering the substrate and gate electrode in the upper surface of gate electrode using thin film deposition processes.
14. production method according to claim 11, which is characterized in that described to prepare channel semiconductor on gate insulation layer
Layer specifically:
Using thin film deposition processes gate insulation layer upper surface depositing trench semiconductor material, and by channel semiconducting material photoetching
At predetermined pattern, channel semiconductor is formed through over etching.
15. production method according to claim 11, which is characterized in that prepare source electrode and leakage on the gate insulation layer
Electrode specifically:
One layer of metallic film is grown in the upper surface of gate insulation layer and channel semiconductor using sputter coating method, and by the gold
Belong to thin film photolithography into predetermined pattern, forms source electrode and drain electrode.
16. production method according to claim 11, which is characterized in that the source electricity processed on source electrode and drain electrode layer
Pole separation layer and drain electrode separation layer specifically:
Using thin film deposition processes, deposit to form the covering source electrode and drain electrode in the upper surface of source electrode and drain electrode layer
One layer insulating of layer, then it is photo-etched into predetermined pattern, eventually form source electrode separation layer and drain electrode separation layer.
17. production method according to claim 11, which is characterized in that described to be isolated in source electrode separation layer and drain electrode
X-ray photoconductive layer is prepared on layer specifically:
It deposits to be formed in the upper surface of source electrode separation layer, drain electrode separation layer and channel semiconductor using thin film deposition processes
X-ray photoconductive layer.
18. production method according to claim 11, which is characterized in that the preparation covers entire X-ray photoconductive layer
Top electrode specifically:
One layer of conductor material is grown on the surface of the X-ray photoconductive layer using sputter coating method and forms top electrode；Or it uses
Ion implantation grows heavily-doped semiconductor material and forms top electrode.
19. production method described in 1 or 18 according to claim 1, it is characterised in that:
The conductor material is gold, silver, copper, aluminium, molybdenum, nickel, tin indium oxide, indium zinc oxide, electrically conducting transparent plastics, conductive compound
In any one or more.
20. production method according to claim 14, it is characterised in that:
The channel semiconductor material is any one in amorphous silicon, polysilicon, indium gallium zinc oxide or organic semiconducting materials
Or it is a variety of.
21. production method described in 1 or 17 according to claim 1, it is characterised in that:
The material of the X-ray photoconductive layer is to include amorphous selenium, lead oxide, mercuric iodixde, first ammonia lead iodide, antimony zinc cadmium or calcium titanium
Any one or more in the direct X-ray detection material of mine.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022094752A1 (en) * | 2020-11-03 | 2022-05-12 | 深圳先进技术研究院 | Organic transistor ray detector based on heterojunction layered structure, and preparation method therefor |
| CN114520272A (en) * | 2020-11-20 | 2022-05-20 | 深圳先进技术研究院 | All-inorganic transistor type X-ray detector and preparation method thereof |
| WO2022104705A1 (en) * | 2020-11-20 | 2022-05-27 | 深圳先进技术研究院 | All-inorganic transistor x-ray detector and manufacturing method therefor |
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| CN1726600A (en) * | 2002-12-11 | 2006-01-25 | 三星电子株式会社 | The thin-film transistor display panel that is used for X-ray detector |
| CN102576715A (en) * | 2009-06-17 | 2012-07-11 | 密执安州立大学董事会 | Photodiode and other sensor structures in flat-panel x-ray imagers and method for improving topological uniformity of the photodiode and other sensor structures in flat-panel x-ray imagers based on thin-film electronics |
| CN105940502A (en) * | 2013-12-04 | 2016-09-14 | 射线科学有限公司 | X-ray detector, x-ray imaging device using same, and driving method therefor |
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| CN1726600A (en) * | 2002-12-11 | 2006-01-25 | 三星电子株式会社 | The thin-film transistor display panel that is used for X-ray detector |
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