CN114520272A - All-inorganic transistor type X-ray detector and preparation method thereof - Google Patents

All-inorganic transistor type X-ray detector and preparation method thereof Download PDF

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CN114520272A
CN114520272A CN202011307089.8A CN202011307089A CN114520272A CN 114520272 A CN114520272 A CN 114520272A CN 202011307089 A CN202011307089 A CN 202011307089A CN 114520272 A CN114520272 A CN 114520272A
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layer
electrode
channel semiconductor
gate insulating
semiconductor layer
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李佳
曹勇
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Shenzhen Institute of Advanced Technology of CAS
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Shenzhen Institute of Advanced Technology of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H01L31/119—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation characterised by field-effect operation, e.g. MIS type detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention provides an all-inorganic transistor type X-ray detector and a preparation method thereof. The detector comprises a substrate, a gate electrode, a gate insulating layer, a channel semiconductor layer, a source electrode, a drain electrode, an X-ray absorption layer and a protective layer, wherein a heterojunction is established between the X-ray absorption layer and the channel semiconductor layer, under the irradiation of X-rays, the heterojunction separates generated electron-hole pairs, and carriers generated by the X-ray absorption layer are injected into the channel semiconductor layer. The invention does not need to arrange a top electrode, transfers the non-equilibrium current carrier of the absorption layer to the channel layer through the heterojunction interface, can work under the condition of low voltage, and has simple device structure and easy manufacture.

Description

All-inorganic transistor type X-ray detector and preparation method thereof
Technical Field
The invention relates to the technical field of X-ray detectors, in particular to an all-inorganic transistor type X-ray detector and a preparation method thereof.
Background
Currently, commercial direct-detection X-ray flat panel detectors are generally amorphous selenium (a-Se) -based flat panel detectors, which have a wide dynamic range and can meet the requirements of low-energy X-ray imaging, such as mammography (20 keV). However, the amorphous selenium flat panel X-ray detector has a two-terminal structure and does not have a charge gain function, and thus does not have a signal amplification function, resulting in a low signal-to-noise ratio. In order to enhance the charge signal, an X-ray direct detector is usually integrated with a field effect transistor, and the electric signal is amplified by a transistor. And in order to improve the signal response, it is usually necessary to form a top electrode on the X-ray absorption layer, apply a bias voltage to the top electrode, so that the electron-hole generated by X-ray irradiation is separated, and the carrier is injected into the conductive communication.
In the prior art, as shown in fig. 1, typical detector structures need to be provided with a top electrode, such as patent applications CN201811094472.2, CN201810563401.6CN201710977868.0, etc. Such a detector structure requires additional electrodes, which is disadvantageous for simplifying the manufacturing process.
Disclosure of Invention
The present invention is directed to overcome the above-mentioned drawbacks of the prior art, and provides an all-inorganic transistor-type X-ray detector and a method for manufacturing the same, which can facilitate separation of photo-generated carriers by using an appropriate heterojunction structure and can operate at a low voltage.
According to a first aspect of the present invention, an all-inorganic transistor-type X-ray detector is provided. The detector comprises a substrate, a gate electrode, a gate insulating layer, a channel semiconductor layer, a source electrode, a drain electrode, an X-ray absorption layer and a protective layer, wherein a heterojunction is established between the X-ray absorption layer and the channel semiconductor layer, and under the irradiation of X-rays, the heterojunction separates generated electron-hole pairs and enables carriers generated by the X-ray absorption layer to be injected into the channel semiconductor layer.
In one embodiment, the gate electrode is formed on the substrate; the gate insulating layer is formed on the gate electrode; the source electrode and the drain electrode are formed on the gate insulating layer, respectively; the channel semiconductor layer is formed on the gate insulating layer, the drain electrode and the source electrode; the X-ray absorption layer is formed on and covers the channel semiconductor layer.
In one embodiment, a lower surface of the gate electrode is connected to the substrate; the upper surface of the gate electrode is connected with the lower surface of the gate insulating layer; the upper surface of the gate insulating layer is connected with the lower surface of the channel semiconductor layer; the lower surfaces of the source electrode and the drain electrode are connected with the upper surface of the channel semiconductor layer; the upper surface of the source electrode and the upper surface of the drain electrode are respectively connected with the lower surface of the X-ray absorption layer; the upper surface of the X-ray absorption layer is connected with the protective layer.
In one embodiment, the present invention provides the detector further comprising a charge transport layer, wherein the gate electrode is formed on the substrate; the gate insulating layer is formed on the gate electrode; the source electrode and the drain electrode are formed on the gate insulating layer, respectively; the channel semiconductor layer is formed on the gate insulating layer, the drain electrode and the source electrode; the charge transport layer is formed and covers the channel semiconductor layer; the X-ray absorption layer is formed on and covers the charge transport layer.
In one embodiment, the lower surface of the gate electrode is connected to the substrate, and the upper surface of the gate electrode is connected to the lower surface of the gate insulating layer; the lower surfaces of the source electrode and the drain electrode are in contact with the gate insulating layer, and the channel semiconductor layer covers the drain electrode, the source electrode and the gate insulating layer; the channel semiconductor layer is connected with the lower surface of the X-ray absorption layer; the upper surface of the X-ray absorption layer is connected with the protective layer.
In one embodiment, the X-ray absorbing layer is formed on the substrate; the source electrode and the drain electrode are respectively formed on the X-ray absorption layer; the channel semiconductor layer is formed and covers the X-ray absorption layer, the drain electrode and the source electrode; the gate insulating layer is formed on the channel semiconductor; the gate electrode is formed on the gate insulating layer; the protective layer is formed on the gate electrode.
In one embodiment, the gate electrode, the drain electrode and the source electrode are made of one or more of gold, silver, copper, aluminum, molybdenum, nickel, indium tin oxide, indium zinc oxide, transparent conductive plastic, conductive compound, heavily doped semiconductor material.
In one embodiment, the channel semiconductor layer is made of one or more of amorphous silicon, monocrystalline silicon, polycrystalline silicon, tin oxide, zinc oxide, indium gallium zinc oxide, molybdenum disulfide, lead iodide, and other semiconductor materials.
In one embodiment, the X-ray absorbing layer comprises one or more of amorphous selenium, lead oxide, lead sulfide, mercury iodide, methylaminolead iodide, cadmium zinc antimony, cesium lead iodide, cesium lead bromide, or a mixed cationic/anionic inorganic halogen perovskite.
According to a second aspect of the present invention, there is provided a method of manufacturing an all-inorganic transistor-type X-ray detector, comprising: preparing a gate electrode on a substrate; preparing a gate insulating layer on the substrate and the gate electrode; preparing a channel semiconductor layer on the gate insulating layer; preparing a source electrode and a drain electrode on the channel semiconductor layer; preparing an X-ray absorption layer on the channel semiconductor layer; a protective layer is prepared covering the entire upper surface of the detector.
Compared with the prior art, the invention has the advantages that the top electrode is not needed to be arranged, the non-equilibrium carriers of the absorption layer are transferred into the transistor channel through the heterojunction interface, and the transistor can work under the condition of low voltage. The device has simple structure and easy manufacture, and can save energy in the using process.
Drawings
The invention is illustrated and described only by way of example and not by way of limitation in the scope of the invention as set forth in the following drawings, in which:
FIG. 1 is a schematic diagram of a typical detector of the prior art;
FIG. 2 is a schematic view of a bottom-gate bottom-contact charge transport layer-free X-ray detector according to one embodiment of the present invention;
FIG. 3 is a schematic view of an X-ray detector with a bottom gate bottom contact with a charge transport layer according to one embodiment of the present invention;
FIG. 4 is a schematic diagram of an X-ray detector with a top gate top contacting an uncharged transport layer in accordance with one embodiment of the present invention;
fig. 5 is an equivalent circuit diagram of a photoelectron injection type X-ray detector;
FIG. 6 is a schematic diagram of a transfer curve of an X-ray detector with and without X-ray exposure in accordance with one embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions, design methods, and advantages of the present invention more apparent, the present invention will be further described in detail by specific embodiments with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In all examples shown and discussed herein, any particular value should be construed as exemplary only and not as limiting. Thus, other examples of the exemplary embodiments may have different values.
Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate.
The principle of the all-inorganic transistor type X-ray detector provided by the invention is as follows: the heterojunction formed between the X-ray absorption layer and the channel layer (or called channel semiconductor layer) is used to directly inject the electrons/holes generated by X-ray irradiation into the channel layer. Due to the injection of carriers, a current between the drain electrode and the source electrode is significantly increased or a threshold voltage of a TFT (thin film transistor) is shifted, thereby enabling detection of X-rays.
The type of the all-inorganic transistor-type X-ray detector and the corresponding manufacturing method provided by the present invention will be specifically described below.
Example one
Referring to fig. 2, which is an example of a bottom-gate bottom-contact no-charge-transport layer, the X-ray detector specifically includes: a substrate 101; a gate electrode 102 formed on the substrate 101; a gate insulating layer (or dielectric layer) 103 formed on the gate electrode 102; a source electrode 106 and a drain electrode 107 formed on the gate insulating layer 103, respectively; a channel semiconductor layer 104 formed on the gate insulating layer 103, the drain electrode 107, and the source electrode 106; and an X-ray absorption layer 105 formed on and covering the channel semiconductor layer 104.
Example two
Referring to fig. 3, which is an example of a bottom gate bottom contact with a charge transport layer, the X-ray detector specifically includes: a substrate 101; a gate electrode 102 formed on the substrate 101; a gate insulating layer 103 formed on the gate electrode 102; a source electrode 106 and a drain electrode 107 formed on the gate insulating layer 103, respectively; a channel semiconductor layer 104 formed on the gate insulating layer 103, the drain electrode 107, and the source electrode 106; a charge transport layer 108 formed overlying the channel semiconductor layer 104; and an X-ray absorption layer 105 formed on and covering the charge transport layer 108.
EXAMPLE III
Referring to fig. 4, which is an example of a top gate top contacting a non-charge transport layer, the X-ray detector specifically includes: a substrate 101; an X-ray absorption layer 105 formed on the substrate 101; a source electrode 106 and a drain electrode 107 respectively formed on the X-ray absorption layer 105; a channel semiconductor layer 104 formed to cover the X-ray absorption layer 105, the drain electrode 107, and the source electrode 106; a gate insulating layer 103 formed on the channel semiconductor layer 104; a gate electrode 102 formed on the gate insulating layer 103; a protective layer (not shown) formed on the gate electrode 102;
in the above-described embodiment, the provided transistor-type X-ray detector is based on the principle that: the X-ray absorption layer generates non-equilibrium carriers, under the action of a heterojunction formed by the absorption layer, the charge transmission layer and the channel semiconductor layer, electron-hole pairs generated when the device is irradiated by X-rays are rapidly separated, and the carriers are injected into the channel layer, so that the carrier concentration in the channel layer is increased, the photocurrent is effectively increased, the photoelectric characteristics of the X-ray detection device are improved, and the sensitivity of the photoelectron injection type X-ray detection device is improved. Particularly, in the case of preparing a channel semiconductor layer using a semiconductor material having high mobility, the response speed of the detector is effectively increased.
Preferably, the gate electrode 102, the drain electrode 107, and the source electrode 106 are made of any one or more of gold, silver, copper, aluminum, molybdenum, nickel, indium tin oxide, indium zinc oxide, transparent conductive plastic, conductive compound, and heavily doped semiconductor material.
Preferably, the channel semiconductor layer 104 is made of one or more of amorphous silicon, monocrystalline silicon, polycrystalline silicon, tin oxide, zinc oxide, indium gallium zinc oxide, molybdenum disulfide, lead iodide, and other semiconductor materials.
Preferably, the material of the X-ray absorbing layer 105 is any one or more of amorphous selenium, lead oxide, lead sulfide, mercury iodide, methyl lead iodide, cadmium zinc antimony (CZT), cesium lead iodide, cesium lead bromide, or mixed cation/anion inorganic halogen perovskites.
It should be noted that the above embodiments are only referred to as typical device structures, and any type of modification produced by exchanging the functional layer sequence is within the protection scope of the present invention.
According to a second aspect of the present invention, there is provided a method for manufacturing an all-inorganic transistor-type X-ray detector, i.e. a heterojunction-based photoelectron injection-type X-ray direct detector, taking the transistor-type X-ray detector of fig. 2 as an example, the heterojunction established by the absorption layer and the channel layer forms a built-in electric field, and the electric field causes electron-hole pairs generated by the X-rays acting on the absorption layer to be rapidly separated, so that carriers are injected into the channel semiconductor layer by the built-in electric field. When the device works in an on state, the photoelectric current can be effectively increased, the photoelectric characteristic of the transistor type X-ray detection device is improved, and the sensitivity of X-rays is enhanced. In addition, the material selected by the channel semiconductor layer has higher mobility, so that the invention has higher response speed. And the structure has the functions of a switch, an amplifier, a sensor and a capacitor at the same time.
Example four
Referring to fig. 2, in this embodiment, the lower surface of the gate electrode 102 is connected to the substrate 101, and the upper surface of the gate electrode 102 is connected to the lower surface of the gate insulating layer 103; the upper surface of the gate insulating layer 103 is connected to the lower surface of the channel semiconductor layer 104; the lower surface of the source electrode 106 and the lower surface of the drain electrode 107 are connected to the upper surface of the channel semiconductor layer 104; the upper surface of the source electrode 106 and the upper surface of the drain electrode 107 are connected to the lower surface of the X-ray absorption layer 105, respectively, and the upper surface of the X-ray absorption layer 105 is connected to a protective layer (not shown).
In this embodiment, the gate insulating layer 103 covers the gate electrode 102 and the substrate 101, and the substrate 101 may be made of a single crystal silicon wafer, glass, plastic, or the like.
Preferably, the material of the channel semiconductor layer 104 is one or more of monocrystalline silicon, polycrystalline silicon, indium gallium zinc oxide, tin oxide, halogen perovskite thin film material, and the like.
Preferably, the material of the X-ray absorption layer 105 is any one or more of X-ray detection materials including amorphous selenium, lead oxide, mercury iodide, methylammonium lead iodide, cadmium zinc antimony (CZT), or perovskite. The carrier concentration of the X-ray absorption layer changes with the change in the X-ray dose.
Preferably, the gate electrode 102 is made of one or more of aluminum, molybdenum, chromium, titanium, nickel, metal, and indium tin oxide, indium zinc oxide, transparent conductive plastic, or conductive glass.
Preferably, the source electrode 106 and the drain electrode 107 are made of any one or more of aluminum, molybdenum, chromium, titanium, nickel, and the like. The gate electrode 102, the source electrode 106 and the drain electrode 107 are all made of high conductivity materials.
Fig. 5 is an equivalent circuit diagram of a photoelectron injection type X-ray detector, in which D denotes a drain electrode, G denotes a gate electrode, and S denotes a source electrode. It can be seen that the present invention can be equivalently implemented as an integrated device of a diode and a thin film transistor formed between the X-ray light absorption layer-channel layer. When the X-ray irradiates, the carrier concentration in the absorption layer is increased, electrons are injected into a conducting channel of the thin film transistor under the action of an electric field built in the heterojunction, the current of the thin film transistor is changed, and the X-ray sensor is used. When a proper gate bias voltage is applied to the gate electrode and the source electrode, and the output current of the thin film transistor device is smaller than a certain value, the detection device is in a closed state; when the output current is larger than or equal to a certain value, the detection device is in an open state and can play a role of a switch. For example, in an actual circuit, it may be set that the thin film transistor device is in an off state when the thin film transistor device outputs a current smaller than 1nA, and in an on state when the thin film transistor device outputs a current greater than or equal to 1 nA.
Fig. 6 is a graph showing transfer curves of the X-ray detector under the conditions of X-ray irradiation (corresponding to the upper curve) and no X-ray irradiation (corresponding to the lower curve), and when the thin film transistor device according to the embodiment of the present invention is irradiated with X-rays, the electron concentration in the channel semiconductor layer increases and the output current increases. And establishing a database of corresponding currents obtained by different X-ray irradiation doses, and calculating the X-ray dose under the environment by reading the current intensity of the thin film transistor device exposed to the X-ray, wherein the thin film transistor device plays the role of a photoelectric sensor. When a certain bias voltage is applied to the source electrode and the drain electrode of the thin film transistor, the output current of the transistor is rapidly increased or reduced, and the thin film transistor plays a role of an amplifier.
Still referring to fig. 2, the method for manufacturing the all-inorganic transistor-type X-ray detector of this embodiment includes the steps of:
in step S1, a gate electrode is prepared on the substrate.
For example, a metal film is grown on the surface of the substrate by an evaporation coating method, or a silicon wafer substrate with high doping is used.
Step S2, a gate insulating layer is prepared on the substrate and the gate electrode.
For example, a gate insulating layer covering the substrate and the gate electrode is formed using spin coating, doctor blading, vapor deposition, thermal oxidation, or the like.
Specifically, 100nm thick silicon dioxide is formed as a gate insulating layer on a highly doped n-type or p-type silicon wafer by thermal oxidation or by chemical vapor deposition.
In step S3, a channel semiconductor layer is prepared on the gate insulating layer.
For example, a thin film deposition process is used to deposit the channel semiconductor material on the upper surface of the gate insulating layer.
Specifically, a 40nm thick Indium Gallium Zinc Oxide (IGZO) was prepared on the gate dielectric material in step S2 using magnetron sputtering.
Step S4, preparing a source electrode and a drain electrode on the channel semiconductor layer.
For example, a metal thin film is grown on the upper surface of the channel semiconductor layer by an evaporation method, and the metal thin film is patterned by a mask to form a source electrode and a drain electrode.
Specifically, on the channel semiconductor layer in step S3, aluminum oxide was thermally evaporated to a thickness of 100-200 nm. The electrode width is 1000um and the channel length is 100 um.
Step S5, an X-ray absorption layer is prepared on the channel semiconductor layer.
For example, the X-ray absorbing material in the form of quantum dots, nanowires, or thin films is prepared on the channel semiconductor layer by spin coating, drop coating, or the like.
In one example, the preparation of the X-ray absorbing layer on the channel semiconductor layer specifically includes:
step S51, coating 5-10 mul of all-inorganic perovskite (cesium lead iodine bromide) with the concentration of 10mg/ml on the surface of the IGZO-TFT channel;
and step S52, after drying at room temperature to form a film, immersing the sample in S51 into an anti-solvent of the inorganic perovskite quantum dot, keeping for 10-180S, and removing redundant organic ligands in the organic perovskite quantum dot.
Step S53, the sample in S52 is immersed in a solution of lead acetate or lead nitrate for 10S-180S.
For example, solutions of lead acetate or nitrate are used with solvents that are anti-solvents for inorganic perovskites.
Step S6, a protective layer is prepared covering the entire upper surface of the device.
For example, an electrode protection layer is deposited on the upper surface of the upper absorption layer by using a thin film deposition process such as spin coating, doctor blading, evaporation, sputtering, etc.
Specifically, on the X-ray absorbing layer, PMMA was spin-coated at 2000rpm with a PMM concentration of 40 mg/ml.
In the embodiment of the present invention, the conductor material may be any one or more of gold, silver, copper, aluminum, molybdenum, nickel, indium tin oxide, indium zinc oxide, transparent conductive plastic, and conductive compound. The material of the channel semiconductor layer is an organic or inorganic semiconductor material, such as Indium Gallium Zinc Oxide (IGZO), silicon. The X-ray absorption layer is made of one or more of amorphous selenium, lead oxide, lead sulfide, mercury iodide, methylamine lead iodide, antimony zinc Cadmium (CZT), cesium lead iodide, cesium lead bromide or mixed cation/anion inorganic halogen perovskite.
EXAMPLE five
For the preparation methods of other types of all-inorganic transistor-type X-ray detectors, reference may be made to the fourth embodiment, which is not described herein again. For example, with the example of fig. 3, the lower surface of the gate electrode 102 is connected to the substrate 101, and the upper surface of the gate electrode 102 is connected to the lower surface of the gate insulating layer 103; the lower surfaces of the source electrode 106 and the drain electrode 107 are in contact with the gate insulating layer 103, and the channel semiconductor layer 104 covers the drain electrode 107, the source electrode 106 and the gate insulating layer 103; the channel semiconductor layer 104 is connected with the lower surface of the X-ray absorption layer, and the upper surface of the X-ray absorption layer is connected with the protective layer; a charge transport layer 108 is formed overlying the channel semiconductor layer 104; the X-ray absorbing layer is formed on and covers the charge transport layer 108.
The device fabrication of example five differs from the device fabrication of example four in that: before preparing the channel layer, preparing a drain electrode and a source electrode on the gate insulating layer by using an evaporation or sputtering method; and finishing the patterning of the drain electrode and the source electrode by utilizing photoetching or directly adopting a mask plate method.
In conclusion, the heterojunction formed by the perovskite material (cesium lead iodine bromide) absorption layer and the IGZO-TFT channel interface is used for X-ray detection, an external bias is not needed to promote the injection of carriers into the channel, the current-carrying type X-ray detector can work under a lower voltage, and energy is saved. And the covering and processing mode of the perovskite material absorption layer enables the structure of the device to be simpler and the preparation to be convenient.
It should be noted that, although the steps are described in a specific order, the steps are not necessarily executed in the specific order, and in fact, some of the steps may be executed concurrently or even in a changed order as long as the required functions are achieved.
Having described embodiments of the present invention, the foregoing description is intended to be exemplary, not exhaustive, and not limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The terminology used herein is chosen in order to best explain the principles of the embodiments, the practical application, or improvements made to the technology in the marketplace, or to enable others of ordinary skill in the art to understand the embodiments disclosed herein.

Claims (10)

1. An all-inorganic transistor type X-ray detector comprises a substrate, a gate electrode, a gate insulating layer, a channel semiconductor layer, a source electrode, a drain electrode, an X-ray absorption layer and a protective layer, wherein a heterojunction is established between the X-ray absorption layer and the channel semiconductor layer, and under the irradiation of X-rays, the heterojunction separates generated electron-hole pairs and enables carriers generated by the X-ray absorption layer to be injected into the channel semiconductor layer.
2. The all-inorganic transistor-type X-ray detector according to claim 1, wherein the gate electrode is formed on the substrate; the gate insulating layer is formed on the gate electrode; the source electrode and the drain electrode are formed on the gate insulating layer, respectively; the channel semiconductor layer is formed on the gate insulating layer, the drain electrode and the source electrode; the X-ray absorption layer is formed on and covers the channel semiconductor layer.
3. The all-inorganic transistor-type X-ray detector according to claim 2, wherein a lower surface of the gate electrode is connected to the substrate; the upper surface of the gate electrode is connected with the lower surface of the gate insulating layer; the upper surface of the gate insulating layer is connected with the lower surface of the channel semiconductor layer; the lower surfaces of the source electrode and the drain electrode are connected with the upper surface of the channel semiconductor layer; the upper surface of the source electrode and the upper surface of the drain electrode are respectively connected with the lower surface of the X-ray absorption layer; the upper surface of the X-ray absorption layer is connected with the protective layer.
4. The all-inorganic transistor-type X-ray detector according to claim 1, further comprising a charge transport layer, wherein the gate electrode is formed on the substrate; the gate insulating layer is formed on the gate electrode; the source electrode and the drain electrode are formed on the gate insulating layer, respectively; the channel semiconductor layer is formed on the gate insulating layer, the drain electrode and the source electrode; the charge transport layer is formed and covers the channel semiconductor layer; the X-ray absorption layer is formed on and covers the charge transport layer.
5. The all-inorganic transistor-type X-ray detector according to claim 4, wherein a lower surface of the gate electrode is connected to the substrate, and an upper surface of the gate electrode is connected to a lower surface of the gate insulating layer; the lower surfaces of the source electrode and the drain electrode are in contact with the gate insulating layer, and the channel semiconductor layer covers the drain electrode, the source electrode and the gate insulating layer; the channel semiconductor layer is connected with the lower surface of the X-ray absorption layer; the upper surface of the X-ray absorption layer is connected with the protective layer.
6. The all-inorganic transistor-type X-ray detector method according to claim 1, wherein the X-ray absorption layer is formed on the substrate; the source electrode and the drain electrode are respectively formed on the X-ray absorption layer; the channel semiconductor layer is formed and covers the X-ray absorption layer, the drain electrode and the source electrode; the gate insulating layer is formed on the channel semiconductor; the gate electrode is formed on the gate insulating layer; the protective layer is formed on the gate electrode.
7. The all-inorganic transistor-type X-ray detector according to claim 1, wherein the gate electrode, the drain electrode and the source electrode are made of one or more of gold, silver, copper, aluminum, molybdenum, nickel, indium tin oxide, indium zinc oxide, transparent conductive plastic, conductive compound, heavily doped semiconductor material.
8. The all-inorganic transistor-type X-ray detector according to claim 1, wherein the channel semiconductor layer is made of one or more of semiconductor materials such as amorphous silicon, single crystal silicon, polycrystalline silicon, tin oxide, zinc oxide, indium gallium zinc oxide, molybdenum disulfide, and lead iodide.
9. The all-inorganic transistor-type X-ray detector according to claim 1, wherein the X-ray absorption layer comprises one or more of amorphous selenium, lead oxide, lead sulfide, mercury iodide, methotrexate lead iodide, cadmium zinc antimony, cesium lead iodide, cesium lead bromide, or a mixed cation/anion inorganic halogen perovskite.
10. A preparation method of an all-inorganic transistor type X-ray detector comprises the following steps:
preparing a gate electrode on a substrate;
preparing a gate insulating layer on the substrate and the gate electrode;
preparing a channel semiconductor layer on the gate insulating layer;
preparing a source electrode and a drain electrode on the channel semiconductor layer;
preparing an X-ray absorption layer on the channel semiconductor layer;
a protective layer is prepared covering the entire upper surface of the detector.
CN202011307089.8A 2020-11-20 2020-11-20 All-inorganic transistor type X-ray detector and preparation method thereof Pending CN114520272A (en)

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