CN107887455A - A kind of X-ray detection device and preparation method thereof - Google Patents
A kind of X-ray detection device and preparation method thereof Download PDFInfo
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- CN107887455A CN107887455A CN201710977868.0A CN201710977868A CN107887455A CN 107887455 A CN107887455 A CN 107887455A CN 201710977868 A CN201710977868 A CN 201710977868A CN 107887455 A CN107887455 A CN 107887455A
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- 238000001514 detection method Methods 0.000 title claims abstract description 69
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 85
- 239000000463 material Substances 0.000 claims abstract description 57
- 238000009413 insulation Methods 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000004020 conductor Substances 0.000 claims abstract description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 12
- 239000004411 aluminium Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 239000010408 film Substances 0.000 claims description 12
- 229910052750 molybdenum Inorganic materials 0.000 claims description 12
- 239000011733 molybdenum Substances 0.000 claims description 12
- 229910052759 nickel Inorganic materials 0.000 claims description 12
- 229920003023 plastic Polymers 0.000 claims description 12
- 238000004544 sputter deposition Methods 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- 239000011669 selenium Substances 0.000 claims description 10
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 10
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 9
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 9
- 229910052711 selenium Inorganic materials 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims description 7
- 229910000464 lead oxide Inorganic materials 0.000 claims description 6
- 230000005622 photoelectricity Effects 0.000 claims description 6
- 238000000427 thin-film deposition Methods 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 7
- 238000005286 illumination Methods 0.000 description 12
- 230000005684 electric field Effects 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 5
- 230000005693 optoelectronics Effects 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- -1 mercuric iodixde Chemical compound 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 238000009607 mammography Methods 0.000 description 1
- YFDLHELOZYVNJE-UHFFFAOYSA-L mercury diiodide Chemical compound I[Hg]I YFDLHELOZYVNJE-UHFFFAOYSA-L 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/119—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation characterised by field-effect operation, e.g. MIS type detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of X-ray detection device and preparation method thereof, the X-ray detection device includes substrate；Bottom gate electrode, it is formed over the substrate；Gate insulation layer, formed in bottom gate electrode；Source electrode and drain electrode, formed on gate insulation layer and be spaced from each other；Photoconductive semiconductor layer, it is formed in the source electrode and drain electrode；Top electrodes, it is formed on the photoconductive semiconductor layer, and the top electrodes are conductor material, or the semi-conducting material of heavy doping.The X-ray detection device of the present invention can reach the purpose of regulation sensitivity, and the function with sensing and switch by adjusting grid.
Description
Technical field
The invention belongs to technical field of semiconductor device, and in particular to a kind of X-ray detection device and preparation method thereof.
Background technology
X-ray detection is widely used in medical treatment, industry, safety check etc..X-ray detection be divided into direct detection and
Two kinds of indirect detection, indirect detection are that X ray is converted into visible ray using scintillator, then by photoelectric detector by light
Signal is converted into electric signal；Direct detection refers to X ray directly is converted into electric signal using suitable photoconductive material.Relatively
In indirect detection technology, incoherent technique has higher higher sensitivity and resolution ratio.With the development of digital technology,
Studying the flat panel detector of direct detection X ray turns into the research and development focus of people.
The flat panel detector of currently the only commercial direct detection X ray is that the flat board based on amorphous selenium (a-Se) detects
Device, amorphous selenium X-ray flat panel detector have wider dynamic range, disclosure satisfy that low energy X ray imaging such as mammography
The requirement (~20keV) of art.But amorphous selenium flat-bed X-ray detector is two-end structure, without charge gain function, therefore is not had
There is signal amplifying function, therefore signal to noise ratio is low.
The content of the invention
In order to solve the above problems, the first object of the present invention is：A kind of X-ray detection device and its making side are provided
Method, the X-ray detection device have the function of sensor and switch simultaneously, and being applied to can in X-ray detection and imaging
Effectively improve resolution ratio, sensitivity and the signal to noise ratio of flat board X detectors.
To realize the purpose of the present invention, using following technical scheme：
A kind of X-ray detection device, including：
Substrate；
Bottom gate electrode, it is formed over the substrate；
Gate insulation layer, formed in bottom gate electrode；
Source electrode and drain electrode, formed on gate insulation layer and be spaced from each other；
Photoconductive semiconductor layer, X ray is absorbed, it is formed in the source electrode and drain electrode；
Top electrodes, it is formed on the photoconductive semiconductor layer, and the top electrodes are conductor material, or heavily doped
Miscellaneous semi-conducting material.Contact of the top electrodes with photoconductive semiconductor layer is metal ohmic contact or metal Schottky-based contacted
Or PN junction contact.
The X-ray detection device of the embodiment of the present invention, by forming one layer of top electrodes on photoconductive semiconductor layer, use
When, it is biased on the top electrode, electric field is formed in photoconductive semiconductor layer, the presence of electric field causes electronics caused by X-ray photograph
Hole increases the life-span of photo-generated carrier to being rapidly separated, and photo-generated carrier is injected into conductive communication, can be effective
Increase photoelectric current, improve the photoelectric characteristic of X-ray detection device, used the X ray of the embodiment of the present invention to visit so as to improve
Survey the sensitivity of device.
As a kind of specific embodiment, the gate insulation layer covers the bottom gate electrode and substrate.
Have one to overlap as a kind of specific embodiment, between the source electrode and drain electrode and the bottom gate electrode
Area.One crossover region is formed by drain electrode, source electrode and bottom grid so that the Electric Field Distribution in conducting channel is more preferably.
As a kind of specific embodiment, the photoconductive semiconductor layer is formed between the source electrode and drain electrode and covered
Cover whole source electrodes and drain electrode.
As a kind of specific embodiment, the top electrodes cover whole photoconductive semiconductor layer.
In order that obtain the electric fields uniform from top electrodes to photoconductive semiconductor layer so that photo-generated carrier can be as more as possible
Be injected into conducting channel, so as to being collected by hourglass source electrode, form photosignal, the embodiment of the present invention is covered using top electrodes
Cover whole photoconductive semiconductor layer.Certainly, the top electrodes can also a covering part photoconductive semiconductor layer, but its light induced electron
The separating capacity in hole pair is then relative to be weakened, and light responsing sensitivity also can accordingly decline.
Further, the lower surface of the bottom gate electrode is connected with substrate, upper surface and the lower surface phase of gate insulation layer
Even；The upper surface of gate insulation layer is connected with the lower surface of source electrode, drain electrode；Source electrode, the upper surface of drain electrode and photoelectricity half
The lower surface of conductor layer is connected；Photoconductive semiconductor layer upper surface is connected with the lower surface of top electrodes.
As a kind of specific embodiment, the materials of the top electrodes is gold, silver, copper, aluminium, molybdenum, nickel, tin indium oxide,
Any one or more in indium zinc oxide, electrically conducting transparent plastics, conductive compound, or heavily-doped semiconductor material.Specifically,
When contact of the top electrodes with photoconductive semiconductor layer is metal ohmic or Schottky contacts, the top electrodes for gold,
Any one or more in silver, copper, aluminium, molybdenum, nickel, tin indium oxide, indium zinc oxide, electrically conducting transparent plastics, conductive compound；When
When contact of the top electrodes with photoconductive semiconductor layer contacts for PN junction, the top electrodes are attached most importance to doped semiconductor materials.
Namely the material of the gold top electrode has excellent electric conductivity, larger electric field is easily formed at top, makes semiconductor product
Raw more multiple carrier.
As a kind of specific embodiment, the material of the photoconductive semiconductor layer is amorphous selenium, lead oxide, mercuric iodixde, calcium
Any one or more in perovskite like structure photoelectric semiconductor material.The carrier concentration of the photoconductive semiconductor layer is with X agent
Measure size variation and change.The mobility of the semi-conducting material is higher, and the response shone X-ray is sensitive, and preparation technology is simple, makes
Valency is relatively low, can not only effectively improve device performance, additionally it is possible to so that production cost reduces.
As a kind of specific embodiment, the material of the bottom gate electrode is aluminium, molybdenum, chromium, titanium, nickel, metal and oxygen
Change any one or more in indium tin, indium zinc oxide, electrically conducting transparent plastics, electro-conductive glass.
As a kind of specific embodiment, the material of the source electrode and drain electrode is any in aluminium, molybdenum, chromium, titanium, nickel
It is one or more.
As a kind of specific embodiment, the material of the gate insulation layer is non-crystalline silicon, silicon nitride, silica it is any
It is one or more.
As a kind of specific embodiment, the material of the substrate is glass or plastics.
Correspondingly, the embodiment of the present invention additionally provides a kind of preparation method of X-ray detection device, and it includes：
Bottom gate electrode is prepared on substrate；
Prepare the gate insulation layer for covering the substrate and bottom gate electrode；
Source electrode and drain electrode, the source electrode, drain electrode and the bottom gate electrode are prepared on the gate insulation layer
Between there is crossover region；
Prepare photoconductive semiconductor layer on the source and drain electrodes, the photoconductive semiconductor layer formed in the source electrode and
Between drain electrode and the whole source electrodes of covering and drain electrode；
The top electrodes for covering whole photoconductive semiconductor layer are prepared, the top electrodes are that conductor material or heavy doping are partly led
Body material.
As a kind of specific embodiment, the bottom gate electrode that prepared on substrate is specially：
Using sputter coating method in the superficial growth layer of metal film of substrate, and the metallic film is photo-etched into predetermined
Figure, form bottom gate electrode.
The preparation covers the substrate and the gate insulation layer of bottom gate electrode is specially：Using thin film deposition processes,
The upper surface of bottom gate electrode deposits the gate insulation layer to be formed and cover the substrate and bottom gate electrode.
Preparation source electrode and the drain electrode on the gate insulation layer are specially：Using sputter coating method in gate insulation layer
Upper surface growth layer of metal film, and the metallic film is photo-etched into predetermined pattern, forms source electrode and drain electrode.
The photoconductive semiconductor layer for preparing on the source and drain electrodes is specially：Using thin film deposition processes in source electrode
Deposition forms photoconductive semiconductor layer between drain electrode pole surface and source electrode and drain electrode.
Described prepare covers the top electrodes of whole photoconductive semiconductor layer and is specially：Using sputter coating method in the photoelectricity
One layer of conductor material of superficial growth of semiconductor layer forms top electrodes, or grows heavily-doped semiconductor material with ion implantation
Material forms top electrodes.
Wherein, above-mentioned sputter coating method can be magnetron sputtering etc..
The conductor material is gold, silver, copper, aluminium, molybdenum, nickel, tin indium oxide, indium zinc oxide, electrically conducting transparent plastics, conducting
Any one or more in compound.
The material of the photoconductive semiconductor layer is amorphous selenium, lead oxide, mercuric iodixde, perovskite structure photoelectric semiconductor material
In any one or more.
Brief description of the drawings
The embodiment of the present invention is described in further detail below in conjunction with the accompanying drawings, wherein：
Fig. 1 is the sectional view of X-ray detection device of the present invention；
Fig. 2 be X-ray detection device of the present invention under same light-intensity conditions, turn under different top electrode biases
Move curve map；
Fig. 3 is transfer curve figure of the X-ray detection device of the present invention under the conditions of varying strength X-ray photograph；
Fig. 4 be X-ray detection device of the present invention under identical electrical bias, different X-rays are according to the output under intensity
Current curve diagram；
Fig. 5 is X-ray detection device of the present invention equivalent circuit diagram under illumination condition；
Fig. 6 be X-ray detection device of the present invention in the case where being not added with light conditions, top electrodes add under different voltages
Transfer curve figure.
Embodiment
The preferred embodiments of the present invention are illustrated below in conjunction with accompanying drawing, it will be appreciated that described herein preferred real
Apply example to be merely to illustrate and explain the present invention, be not intended to limit the present invention.
Embodiment one：
X-ray detection device of the present invention can be used for preparing indirect X ray detector, i.e., is first converted into X ray
Visible ray, then carry out the device of photodetection.
The X-ray detection device of the embodiment of the present invention includes：Substrate 17；Bottom gate electrode 16, it is formed in the substrate
On 17；Gate insulation layer 15, formed in bottom gate electrode 16；Source electrode 13 and drain electrode 14, are formed on gate insulation layer 15；Light
Electric semiconductor layer 12, it is formed in the source electrode 13 and drain electrode 14；Top electrodes 11, its formation are partly led in the photoelectricity
On body layer 12, contact of the top electrodes with photoconductive semiconductor layer is that metal ohmic, Schottky contacts or PN junction contact.Its
In, when contact of the top electrodes with photoconductive semiconductor layer is metal ohmic or Schottky contacts, the top electrodes 11
For conductor material；When contact of the top electrodes with photoconductive semiconductor layer contacts for PN junction, the top electrodes 11 are attached most importance to
Doped semiconductor materials.
It should be noted that the electron hole pair due to photoconductive semiconductor layer under light illumination is compound serious, so that
Light induced electron is injected into conducting channel, it is compound totally, photoelectric characteristic is poor.
The X-ray detection device of the embodiment of the present invention, by forming one layer on photoconductive semiconductor layer 12 by conductor material
Or the top electrodes 11 that heavily-doped semiconductor material is formed, in use, applying bias-voltage on top electrodes 11, partly led in photoelectricity
Electric field is formed in body layer, the presence of electric field make it that electron hole pair is rapidly separated caused by illumination, increases photo-generated carrier
Life-span, and photo-generated carrier is injected into conductive communication, it can effectively increase photoelectric current, improve X-ray detection device
Photoelectric characteristic, so as to improve the sensitivity of the touch-screen for the X-ray detection device for having used the embodiment of the present invention.Simultaneously as
Photoelectric characteristic improves so that the X-ray detection device of the embodiment of the present invention has the work(of optoelectronic switch and photoelectric sensor simultaneously
Energy.
It should be appreciated that the X-ray detection device of the embodiment of the present invention has photoelectric sensor and optoelectronic switch simultaneously
Function, i.e. the X-ray detection device of the embodiment of the present invention may act as optoelectronic switch use, can also be used as photoelectric sensing
Device uses.
Wherein, as shown in figure 1, the gate insulation layer 15 of the embodiment of the present invention covers the bottom gate electrode 16 and substrate 17.
There is a crossover region between the source electrode 13 and drain electrode 14 and the bottom gate electrode.Pass through drain electrode, source electrode
A crossover region is formed with bottom grid so that the Electric Field Distribution in conducting channel is more preferably.It should be appreciated that the source electrode 13
There is a crossover region between the bottom gate electrode, also there is a crossover region between drain electrode 14 and the bottom gate electrode.
The photoconductive semiconductor layer 12 formed between the source electrode 13 and drain electrode 14 and the whole source electrodes of covering and
Drain electrode.
In order that obtain the electric fields uniform from top electrodes to photoconductive semiconductor layer so that photo-generated carrier can be as more as possible
Be injected into conducting channel, so as to being collected by hourglass source electrode, form photosignal, the embodiment of the present invention is covered using top electrodes
Cover whole photoconductive semiconductor layer.Certainly, the top electrodes can also a covering part photoconductive semiconductor layer, but its light induced electron
The separating capacity in hole pair is then relative to be weakened, and light responsing sensitivity also can accordingly decline.
Further, the lower surface of the bottom gate electrode 16 is connected with substrate 17, under upper surface and gate insulation layer 15
Surface is connected；The upper surface of gate insulation layer 15 is connected with the lower surface of source electrode 13, drain electrode 14；Source electrode 13, drain electrode 14
Upper surface be connected with the lower surface of photoconductive semiconductor layer 12；The upper surface of photoconductive semiconductor layer 12 and the lower surface of top electrodes 11
It is connected.
Wherein, the conductor material of the top electrodes be gold, silver, it is copper, aluminium, molybdenum, nickel, tin indium oxide, indium zinc oxide, transparent
Any one or more in the materials such as conductive plastics, conductive compound.In the present embodiment, the gold, silver, copper, aluminium, molybdenum,
The materials such as nickel, tin indium oxide, indium zinc oxide, electrically conducting transparent plastics, conductive compound, and heavily-doped semiconductor material is
Bright or semi-transparent conductor material, only excellent electric conductivity, does not form larger electric field easily, and enable at top
Illumination loss is small, and the number of photons that semiconductor interface is subject to is more.
The material of the photoconductive semiconductor layer is amorphous selenium, lead oxide, mercuric iodixde, perovskite structure photoelectric semiconductor material
In any one or more.The carrier concentration of the photoconductive semiconductor layer becomes with intensity of illumination and wavelength change
Change.The mobility of the semi-conducting material is higher, and the response to illumination is sensitive, and preparation technology is simple, and cost is relatively low, can not only
Effectively improve device performance, additionally it is possible to so that production cost reduces.
The material of the bottom gate electrode is aluminium, molybdenum, chromium, titanium, nickel, metal and tin indium oxide, indium zinc oxide, transparent led
Any one or more in electric plastics, electro-conductive glass.
The material of the source electrode and drain electrode is any one or more in aluminium, molybdenum, chromium, titanium, nickel.The bottom gate
The material of electrode material and drain electrode and source electrode, its electrical conductivity is high, can effectively reduce noise.
The material of the gate insulation layer is any one or more of non-crystalline silicon, silicon nitride, silica.
The material of the substrate is glass and/or plastics.
The X-ray detection device of the embodiment of the present invention has the function of photoelectric sensor and optoelectronic switch simultaneously.
Wherein, when the output current of X-ray detection device is less than certain electric current, it is closed；When output electricity
When stream is more than or equal to certain electric current, it is in opening, plays a part of optoelectronic switch.For example, in actual circuit, recognize
For when the X-ray detection device output current is less than 1nA, the X-ray detection device is closed, when the X ray is visited
When survey device output current is more than or equal to 1nA, the X-ray detection device is in opening.
And by changing the voltage of top electrodes 11, the X ray indirect detection device cut-in voltage energy of the embodiment of the present invention
It is enough modulated.As shown in Fig. 2 it is 1mW/cm in intensity of illumination2Under the conditions of, different top electrode biases be respectively 0.0V ,-
0.2V, -0.4V, -0.6V, -0.8V, -1V, -1.2V, -1.4V transfer curve figure, it can be seen that being pushed up by changing
The voltage of portion's electrode 11, the cut-in voltage of the X-ray detection device can be modulated.Wherein, voltage V in Fig. 2,3,6BGThe bottom of for
Portion's gate electrode voltage, IdsOr IDSFor drain electrode output current, Vs is top electrodes voltage.
Wherein, the X ray indirect detection device of the embodiment of the present invention is also used as photoelectric sensor use.
As shown in figure 3, within the specific limits, the X ray that the embodiment of the present invention is incident upon when the illumination using varying strength is visited
Device is surveyed, wherein cut-in voltage drifts about.Light intensity is stronger, and drift is more obvious, i.e. illumination is stronger, and device opens required bottom
The voltage of portion's grid 16 is smaller.The voltage V of same bottom gate electrode 16BGUnder, illumination is stronger, the electric current I of the output of drain electrode 14dsIt is bigger.
The X-ray detection device is irradiated to by using different light intensity, can obtain the different output currents of source electrode 13.With different light intensity
Obtained corresponding current establishes database, in other circumstances, first exposed to different photoenvironments by X-ray detection device
Current strength, so that it may obtain the intensity of light under the environment, now X-ray detection device plays a part of photoelectric sensor.
As shown in figure 4,13 voltages of drain electrode are 1.5V, the voltage of bottom gate electrode 16 is 2.5V, and the voltage of top electrodes 11 is distinguished
For -0.9V, -1.0V, -1.1V output current are with light intensity variation diagram, it can be seen that within the specific limits, output current
Ioutput increases as light intensity changes.
As shown in figure 5, the equivalent circuit diagram for the X-ray detection device under light illumination.After top electrodes add voltage,
Equivalent to the photodiode of reverse bias, electric charge will be implanted into conducting channel.Wherein top electrodes voltage VTG＜ 0, bottom
Gate electrode voltage VBG＞ 0.
Further, the X-ray detection device of the embodiment of the present invention, can be by top electricity under conditions of illumination is not added with
Pole adds backward voltage, and to control being turned on and off for X-ray detection device, X-ray detection device is made as electrical switch
With.
As shown in fig. 6, to be not added with light conditions, the transfer curve figure under top electrodes 11 plus different voltages, and leak
The voltage of pole 13 is 1.5V, and the voltage influence that the cut-in voltage of the transfer curve of the four-terminal device is loaded by top electrodes 11 is very big.
Top electrodes 11 plus backward voltage are smaller, the easier unlatching of the device.So can by top voltage opening come control device
Open or close, used as electrical switch.
The preparation method of the X-ray detection device of the embodiment of the present invention is described in detail below, it specifically includes following
Step：
(1) bottom gate electrode is prepared on substrate；Specifically, using sputter coating method substrate one layer of gold of superficial growth
Belong to film, and the metallic film is photo-etched into predetermined pattern, form bottom gate electrode.
(2) gate insulation layer for covering the substrate and bottom gate electrode is prepared；Specifically, using thin film deposition processes,
The upper surface of bottom gate electrode deposits the gate insulation layer to be formed and cover the substrate and bottom gate electrode.
(3) source electrode and drain electrode, the source electrode, drain electrode and bottom gate electricity are prepared on the gate insulation layer
There is crossover region between pole；Specifically, layer of metal film is grown in the upper surface of gate insulation layer using sputter coating method, and will
The metallic film is photo-etched into predetermined pattern, forms source electrode and drain electrode.
(4) photoconductive semiconductor layer is prepared on the source and drain electrodes, and the photoconductive semiconductor layer is formed in source electricity
Between pole and drain electrode and the whole source electrodes of covering and drain electrode；Specifically, using thin film deposition processes in source electrode and electric leakage
Deposition forms photoconductive semiconductor layer between the pole surface of pole and source electrode and drain electrode.
(5) top electrodes for covering whole photoconductive semiconductor layer are prepared, the top electrodes are conductor material or heavy doping
Semi-conducting material.Specifically：Formed using the one layer of conductor material of superficial growth of sputter coating method in the photoconductive semiconductor layer
Top electrodes, or top electrodes are formed using ion implantation growth heavily-doped semiconductor material.Wherein, the sputter coating method
It can be magnetron sputtering etc..
Wherein, the conductor material be gold, silver, copper, aluminium, molybdenum, nickel, tin indium oxide, indium zinc oxide, electrically conducting transparent plastics,
Any one or more in conductive compound.The material of the photoconductive semiconductor layer is amorphous selenium, lead oxide, mercuric iodixde, calcium
Any one or more in perovskite like structure semi-conducting material.
Embodiment two：
The structure of X-ray detection device described in the embodiment of the present invention can be used and prepare direct X-ray detector.Wherein, originally
Structure, operation principle and the preparation process of the X-ray detection device of embodiment and the basic phase of technical scheme described in embodiment 1
Together, its main distinction is：The conductor material and heavily-doped semiconductor material of the top electrodes of the present embodiment need not to be transparent or
Person is translucent.Meanwhile the photoconductive semiconductor layer of the X-ray detection device of the present embodiment is preferably using the wider material of energy gap
Material, such as lead oxide (PbO), mercuric iodixde (HgI2) etc..
Embodiment three：
X-ray detection device structure of the present invention can be with preparing indirect X ray flat panel detector.Wherein, this implementation
Structure, operation principle and the preparation process and the technical scheme described in embodiment 1 of the X-ray detection device of example are essentially identical, its
The main distinction is：When preparing indirect X ray flat panel detector, it is necessary to by the indirect X ray detector system described in embodiment 1
It is standby into array.
Example IV：
X-ray detection device structure of the present invention can be used and prepare direct X-ray flat panel detector.Wherein, this implementation
Structure, operation principle and the preparation process and the technical scheme described in embodiment 2 of the X-ray detection device of example are essentially identical, its
The main distinction is：When preparing direct X-ray flat panel detector, the direct X-ray detector described in embodiment 2 need to be prepared
Into array.
The above described is only a preferred embodiment of the present invention, any formal limitation not is made to the present invention, therefore
Every any modification that without departing from technical solution of the present invention content, the technical spirit according to the present invention is made to above example,
Equivalent variations and modification, in the range of still falling within technical solution of the present invention.
Claims (15)
- A kind of 1. X-ray detection device, it is characterised in that including：Substrate；Bottom gate electrode, it is formed over the substrate；Gate insulation layer, formed in bottom gate electrode；Source electrode and drain electrode, are formed on gate insulation layer；Photoconductive semiconductor layer, it is formed in the source electrode and drain electrode；Top electrodes, it is formed on the photoconductive semiconductor layer, and contact of the top electrodes with photoconductive semiconductor layer is Metal ohmic contact or metal Schottky-based contact or PN junction contact.
- 2. X-ray detection device according to claim 1, it is characterised in that：The gate insulation layer covers the bottom gate electrode and substrate.
- 3. X-ray detection device according to claim 1, it is characterised in that：There is a crossover region between the source electrode and drain electrode and the bottom gate electrode.
- 4. X-ray detection device according to claim 1, it is characterised in that：The photoconductive semiconductor layer is formed between the source electrode and drain electrode and the whole source electrodes of covering and drain electrode.
- 5. X-ray detection device according to claim 1, it is characterised in that：The top electrodes cover whole photoconductive semiconductor layer.
- 6. X-ray detection device according to claim 1, it is characterised in that：When contact of the top electrodes with photoconductive semiconductor layer is metal ohmic or Schottky contacts, the top electrodes are In gold, silver, copper, aluminium, molybdenum, nickel, tin indium oxide, indium zinc oxide, electrically conducting transparent plastics, conductive compound any one or it is more Kind；When contact of the top electrodes with photoconductive semiconductor layer contacts for PN junction, the top electrodes are heavily-doped semiconductor Material.
- 7. X-ray detection device according to claim 1, it is characterised in that：The material of the photoconductive semiconductor layer is amorphous selenium, lead oxide, mercuric iodixde, in perovskite structure photoelectric semiconductor material Any one or more.
- A kind of 8. preparation method of X-ray detection device, it is characterised in that including：Bottom gate electrode is prepared on substrate；Prepare the gate insulation layer for covering the substrate and bottom gate electrode；Source electrode and drain electrode are prepared on the gate insulation layer, between the source electrode, drain electrode and the bottom gate electrode With crossover region；Photoconductive semiconductor layer is prepared on the source and drain electrodes, and the photoconductive semiconductor layer is formed in the source electrode and electric leakage Between pole and the whole source electrodes of covering and drain electrode；The top electrodes for covering whole photoconductive semiconductor layer are prepared, the top electrodes are conductor material or heavily-doped semiconductor material Material.
- 9. according to the method for claim 8, it is characterised in that it is described on substrate prepare bottom gate electrode be specially：Using sputter coating method in the superficial growth layer of metal film of substrate, and the metallic film is photo-etched into predetermined figure Shape, form bottom gate electrode.
- 10. according to the method for claim 8, it is characterised in that described prepare covers the substrate and bottom gate electrode Gate insulation layer is specially：Using thin film deposition processes, the grid to be formed and cover the substrate and bottom gate electrode are deposited in the upper surface of bottom gate electrode Insulating barrier.
- 11. according to the method for claim 8, it is characterised in that described that source electrode and leakage are prepared on the gate insulation layer Electrode is specially：Layer of metal film is grown in the upper surface of gate insulation layer using sputter coating method, and the metallic film is photo-etched into pre- Determine figure, form source electrode and drain electrode.
- 12. according to the method for claim 8, it is characterised in that the photoelectricity for preparing on the source and drain electrodes is partly led Body layer is specially：Deposited using thin film deposition processes between source electrode and drain electrode surface and source electrode and drain electrode and form photoelectricity half Conductor layer.
- 13. according to the method for claim 8, it is characterised in that described to prepare the top for covering whole photoconductive semiconductor layer Electrode is specially：Using sputter coating method at the top of one layer of conductor material of superficial growth of the photoconductive semiconductor layer is formed electricity Pole；Or top electrodes are formed using ion implantation growth heavily-doped semiconductor material.
- 14. the preparation method of the X-ray detection device according to claim 8 or 13, it is characterised in that：The conductor material is gold, silver, copper, aluminium, molybdenum, nickel, tin indium oxide, indium zinc oxide, electrically conducting transparent plastics, conductive compound In any one or more.
- 15. the preparation method of the X-ray detection device according to claim 8 or 12, it is characterised in that：The material of the photoconductive semiconductor layer is amorphous selenium, lead oxide, mercuric iodixde, in perovskite structure photoelectric semiconductor material Any one or more.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108646283A (en) * | 2018-06-04 | 2018-10-12 | 中山大学 | A kind of X-ray detection device and preparation method thereof |
| WO2022094752A1 (en) * | 2020-11-03 | 2022-05-12 | 深圳先进技术研究院 | Organic transistor ray detector based on heterojunction layered structure, and preparation method therefor |
| WO2022104705A1 (en) * | 2020-11-20 | 2022-05-27 | 深圳先进技术研究院 | All-inorganic transistor x-ray detector and manufacturing method therefor |
| CN115332376A (en) * | 2022-08-01 | 2022-11-11 | 深圳大学 | Infrared photoelectric detector and preparation method |
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| US20100176401A1 (en) * | 2009-01-09 | 2010-07-15 | Jae-Bok Lee | X-ray detector and manufacturing method of the same |
| CN103296035A (en) * | 2012-02-29 | 2013-09-11 | 中国科学院微电子研究所 | X-ray flat panel detector and manufacturing method thereof |
| JP2014229638A (en) * | 2013-05-17 | 2014-12-08 | 出光興産株式会社 | Oxide semiconductor thin film |
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| US20100176401A1 (en) * | 2009-01-09 | 2010-07-15 | Jae-Bok Lee | X-ray detector and manufacturing method of the same |
| CN103296035A (en) * | 2012-02-29 | 2013-09-11 | 中国科学院微电子研究所 | X-ray flat panel detector and manufacturing method thereof |
| JP2014229638A (en) * | 2013-05-17 | 2014-12-08 | 出光興産株式会社 | Oxide semiconductor thin film |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108646283A (en) * | 2018-06-04 | 2018-10-12 | 中山大学 | A kind of X-ray detection device and preparation method thereof |
| CN108646283B (en) * | 2018-06-04 | 2022-04-08 | 中山大学 | X-ray detector and manufacturing method thereof |
| WO2022094752A1 (en) * | 2020-11-03 | 2022-05-12 | 深圳先进技术研究院 | Organic transistor ray detector based on heterojunction layered structure, and preparation method therefor |
| WO2022104705A1 (en) * | 2020-11-20 | 2022-05-27 | 深圳先进技术研究院 | All-inorganic transistor x-ray detector and manufacturing method therefor |
| CN115332376A (en) * | 2022-08-01 | 2022-11-11 | 深圳大学 | Infrared photoelectric detector and preparation method |
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Application publication date: 20180406 |