CN207303100U

CN207303100U - A kind of multispectral camera device

Info

Publication number: CN207303100U
Application number: CN201721246373.2U
Authority: CN
Inventors: 黄忠守
Original assignee: Spread Spectrum Photoelectric Technology (shanghai) Co Ltd
Current assignee: Spread Spectrum Photoelectric Technology (shanghai) Co Ltd
Priority date: 2017-09-26
Filing date: 2017-09-26
Publication date: 2018-05-01
Anticipated expiration: 2027-09-26

Abstract

The utility model provides a kind of multispectral camera device.The multispectral camera device includes：First photoelectric conversion unit, including：First photoelectric conversion layer, for will be seen that light opto-electronic conversion is electric signal；First conductive layer, is arranged at the incident side of first photoelectric conversion layer, and current potential is fixed in the first conductive layer connection first；Second conductive layer, is arranged at the light emission side of the first photoelectric conversion layer；The second conductive layer is connected to the first image element circuit；Second photoelectric conversion unit, is arranged at the light emission side of first photoelectric conversion unit, including：Second photoelectric conversion layer, for being electric signal by infrared light opto-electronic conversion, and by signal charge water conservancy diversion to the second image element circuit；3rd conductive layer, is arranged at the incident side of second photoelectric conversion layer；4th conductive layer, is arranged at the light emission side of second photoelectric conversion layer；With the second image element circuit, the second photoelectric conversion layer or the 4th conductive layer are connected.

Description

A kind of multispectral camera device

Technical field

It the utility model is related to medical auxiliary equipment field, more particularly to a kind of multispectral camera device.

Background technology

Human vas is hidden in below the epidermis, is often blocked by subcutaneous fat, or even bone, can infrared photography device It is widely used in medical image diagnosis and punctures ancillary equipment, night monitoring shooting, driving at night shooting, living things feature recognition, The field such as robot vision, the detection of food quality and industrial goods surface quality.It is applied to hand in the epoch of personal digital assistant device Machine shooting etc. can then promote more colourful application and developments to come out.The wave-length coverage of human eye sensitivity is from 400nm to 760nm So-called visible ray spectral region, but use the picture pick-up device and system of different light sensitive materials, its photoelectric respone can be with Far infrared band is extended to from X-ray wave band, then shows sightless electronic image information with the form of visible ray, Human eye " direct " can be allowed to see.As described above, in view of human eye is inherent can only to see and identify visible images, in real time Original sightless electromagnetic radiation image and visible images are compared to each other in same locus on the spot, could externally The understanding of boundary's object embodies, and the memory for visible images that could be conventional with human brain is interrelated, could be to same thing The various spectral characteristics of body do a comprehensive judgement and information processing.

The multispectral camera system using the dual camera of visible ray and infrared light is developed for this purpose, but is had Fiber crops on the bulky not readily portable and high cost problem brought, and different optical axis the system image alignment and processing that bring It is tired.In order to avoid this problem, people are also developed using one not only to visible ray sensitivity, but also the image pick-up device to infrared photaesthesia Part, gathers and handles respectively the image of different spectral bands on the different periods.It is but this either using mechanical Chopper or using electronic shutter, not only brings the complexity of system construction and driving, but also exist concurrently with visible ray In the image information space of infrared light, especially change in the locus of subject or radiation intensity with the time Occasion, can not obtain the image of accurate different spectrum in real time.

It is different according to the absorption depth of the photon of different wave length, same semi-conducting material is repeated to stack up in difference Absorption depth on can obtain the images of different spectral regions at the same time, the image of these different spectral regions can be pixel With at least four-dimensional image information (XY Spatial Dimensions, time shaft dimension, wavelength or the energy axes dimension of pixel exactitude position On intensity distribution image).

More further, if using different semiconductor (inorganic or organic semiconductor optoelectronic transition material) phases Mutually stack up, or be superimposed the optical diaphragms such as different filter plates, polarizer again, it is possible to make full use of different semiconductors The selection and modulating action of characteristic (bandwidth, absorbs depth etc.) and optical diaphragm to incident ray, the light that be able to will be gathered Image information is composed, is expanded in the characteristics such as the energy of light radiation, density, phase, polarization broader and abundant.

In the prior art, the cmos device that continuous continual amorphous silicon semiconductor film is superimposed upon to silicon has been included On the obtained multispectral picture pick-up device of laminated type mixed semiconductor, that includes will be seen that light is converted into the first photoelectricity of electric signal Conversion layer and the second photoelectric conversion layer for converting infrared light into electric signal, the first photoelectric conversion layer and the second photoelectric conversion layer Set in a manner of being overlapped mutually in the incident direction in light.The advantages of in order to make full use of silicon integrated circuit, the first photoelectricity The electronic signal of conversion layer and the second photoelectric conversion layer is connected respectively to the respective affiliated transistor made on different silicon substrates Image element circuit, stores signal, and amplification, signal-to-noise ratio pre-processes and is optionally sequentially outputted to external circuit and does further Amplification, signal-to-noise ratio processing, digital-to-analogue conversion and are transferred to network and Cloud Server at image procossing.In this configuration, along entering Penetrate the direction of light, the signal electrode of the light extraction side of the first photoelectric conversion layer and the signal for entering light side of the second photoelectric conversion layer Electrode is to be in electrically floating state in signal memory phase, and can be interfered with each other by the parasitic capacitance between them, this Kind of interference can cause output signal " colour mixture ", or even signal amplitude cancels out each other or decays.

Utility model content

For in the prior art the defects of, the purpose of this utility model is to provide multispectral camera device, overcomes existing Difficulty in technology, avoids output signal " colour mixture ", or even the problems such as cancelling out each other or decay of signal amplitude so that highly sensitive The multispectral shooting of degree is possibly realized.

One side according to the present utility model, there is provided a kind of multispectral camera device, the multispectral camera device bag Include：First photoelectric conversion unit, first photoelectric conversion unit include：First photoelectric conversion layer, for will be seen that light photoelectricity Be converted to electric signal；First conductive layer, can pass through visible ray and infrared light, be arranged at first photoelectric conversion layer enters light Current potential is fixed in side, the first conductive layer connection first；Second conductive layer, permeable to infrared, is arranged at first photoelectricity The light emission side of conversion layer；With the first image element circuit, first image element circuit is connected to second conductive layer；Second photoelectricity turns Unit is changed, is produced on a silicon substrate and is arranged at the light emission side of first photoelectric conversion unit, second opto-electronic conversion Unit includes：Second photoelectric conversion layer, for being electric signal by infrared light opto-electronic conversion；3rd conductive layer, permeable to infrared, It is arranged at the incident side of second photoelectric conversion layer；4th conductive layer, is arranged at the light emission side of second photoelectric conversion layer； With the second image element circuit, second image element circuit is connected to the second photoelectric conversion layer or the 4th conductive layer.

Alternatively, first image element circuit includes the first output transistor, its source electrode connects second conductive layer, Its drain electrode is connected to output signal line；Second image element circuit includes the second output transistor, second output transistor Source diffusion layer connects second photoelectric conversion layer, or the source electrode of second output transistor is connected to the described 4th Conductive layer, its drain electrode are connected to output signal line.

Alternatively, first image element circuit is the circuit of APS (active pixel sensor) type and is produced on institute State on silicon substrate, it is included at least：First reset transistor, is connected to the second conductive layer, for second conductive layer Current potential carries out reset processing；First amplifying transistor, its grid are connected to second conductive layer and by second conductive layers Quantity of electric charge signal be converted into voltage signal；With the first output transistor, for being made choice to first amplifying transistor Output；Second image element circuit is the circuit of APS (active pixel sensor) type and is produced on the silicon substrate On, it includes：Second reset transistor, its source diffusion layer is connected to second photoelectric conversion layer or its source electrode is connected to 4th conductive layer simultaneously carries out reset processing to the current potential of the source diffusion layer or the source electrode；Second amplification crystal Pipe, its grid is connected to the source electrode of second reset transistor, and the quantity of electric charge of the second reset transistor source electrode is believed Number it is converted into voltage signal；With the second output transistor, output is made choice for second amplifying transistor.

Alternatively, the 3rd conductive layer connection second fixes current potential or in electrically floating state；4th conductive layer It is connected to the 3rd fixation current potential.

Alternatively, the sandwich construction of the silicon substrate sequentially includes along the direction of incident ray：First conduction type The first ion implanted layer, as the 3rd conductive layer, the thickness of first ion implanted layer is d1, its doping concentration is N1；First silicon epitaxial layer of the first conduction type, the thickness of first silicon epitaxial layer is d2, its doping concentration is N2；Second ion implanted layer of the second conduction type, as the central area of second photoelectric conversion layer, second ion The thickness of implanted layer is d3, its doping concentration is N3；Second silicon epitaxial layer of the first conduction type, second silicon epitaxy The thickness of grown layer is d4, its doping concentration is N4；The layer-of-substrate silicon of first conduction type, as the 4th conductive layer, institute The thickness for stating layer-of-substrate silicon is d5, its doping concentration is N5.

Alternatively, the silicon substrate further includes：The heavily doped diffusion layer of a plurality of discontinuous first conduction types and The heavily doped diffusion layer of two conduction types, is arranged on first silicon epitaxial layer, as first image element circuit With the diffusion layer of the diffusion layer and raceway groove barrier layer of the source electrode of CMOS transistor in the second image element circuit and drain electrode；It is at least one The diffusion zone of the heavily doped diffusion layer of second conduction type extends to and connects second ion implanted layer.

Alternatively, the central area relatively described first of the second photoelectric conversion layer in second conductive layer and silicon substrate The projection that plane where conductive layer is formed has an overlapping areas, and the area of the overlapping areas exceedes described second The 85% of reckling area in two projections of the central area of conductive layer and second photoelectric conversion layer.

Alternatively, the projection that plane where relatively described first conductive layer of second conductive layer and the 3rd conductive layer is formed With an overlapping areas, and the area of the overlapping areas exceedes second conductive layer and the 3rd conductive layer The 85% of reckling area in two projections.

Alternatively, the relation between the doping concentration of each layer in the silicon substrate and thickness is：

(d₁×N₁+d₂×N₂)>0.5×d₃×N₃；And

(d₅×N₅+d₄×N₄)>0.5×d₃×N₃。

d₂×N₂<0.5×d₃×N₃。

d₄×N₄<0.5×d₃×N₃。

d₁=0, d₂=0, and (d₅×N₅+d₄×N₄)>0.5×d₃×N₃。

Alternatively, the doping concentration of second ion implanted layer, on the direction perpendicular to incident ray, towards described The extension section of the source diffusion layer of second reset transistor of the second image element circuit gradually increases, and makes to note in second ion A potential barrier gradient is formed after entering the carrier depletion in layer, the photoproduction of the second photoelectric conversion layer described in the potential barrier gradient-driven carries The source diffusion layer of stream towards second reset transistor drifts about and the obstruction without potential barrier.

Alternatively, first conduction type is acceptor or hole conduction type；Second conduction type is alms giver Or electronic conduction type.

Alternatively, first photoelectric conversion unit further includes：First electric charge injects barrier film, is arranged at first light The incident side surface of electric conversion layer, between first photoelectric conversion layer and first conductive layer；Second electric charge injects Barrier film, is arranged at the light extraction side surface of first photoelectric conversion layer, positioned at first photoelectric conversion layer and described second Between conductive layer.

Alternatively, the first electric charge injection barrier film and second electric charge injection barrier film are appointing in following material One or more combination：Silica, silicon nitride, hydrogenated silicon carbide, the silicon semiconductor film of heavy doping, the oxide etc. of zinc indium gallium Wide bandgap semiconductor thin-film material, zinc oxide, zinc sulphide, zinc selenide and cadmium sulfide.

Alternatively, first photoelectric conversion layer includes：Hydrogenation non crystal silicon film, amorphous selenium film, lead oxide film, indium Photoelectric conversion film made of the mixed film material of the sull of gallium Zn-ef ficiency, telluride selenium film, zinc telluridse and cadmium telluride Layer.

Alternatively, the multispectral camera device further includes grinding-flatening film, the grinding-flatening film and described the Two conductive layers are set with layer.

Alternatively, the multispectral camera device further includes the reflectance coating of an infrared light, and the reflectance coating of the infrared light is set It is placed in the light emission side of the 4th conductive layer.

In view of this, the multispectral camera device of the utility model is by the structure of inside of human body or the related letter of tissue Breath, with bidimensional, three-dimensional even dynamic image directly displays out, substantially increases the visuality of veins beneath the skin or internal internal organs, Allow human eye directly and real-time monitored, can know the position of blood vessel exactly, can be avoided when easy to operation blood vessel or Special processing is done to blood vessel, helps to carry out diagnose and treat, and the multispectral shooting to the internal structure and tissue of human body Device can be effectively prevented from for the electronic signal of the first photoelectric conversion layer and the second photoelectric conversion layer to be connected respectively to respectively Interfered with each other from upper two electrode of image element circuit by parasitic capacitance, and the output signal " colour mixture " being subsequently formed, very To signal amplitude the problems such as cancelling out each other or decay.

Brief description of the drawings

Upon reading the detailed description of non-limiting embodiments with reference to the following drawings, other spies of the utility model Sign, objects and advantages will become more apparent upon：

Fig. 1 is the structure diagram of the multispectral camera device of one embodiment of the utility model；

Fig. 2 is the structure diagram of the multispectral camera device of another embodiment of the utility model；

Fig. 3 is the structure diagram of the multispectral camera device of another embodiment of the utility model；

Fig. 4 is the cross section structure schematic diagram of the multispectral camera device of another embodiment of the utility model；

Fig. 5 is the cross section structure schematic diagram of the multispectral camera device of another embodiment of the utility model；

Fig. 6 is the close-up schematic view at D in Fig. 5；

Electronic potential distribution when Fig. 7 is the doping content of semiconductor distribution and device work on A-A directions in Fig. 6 is shown It is intended to；

Electronic potential distribution when Fig. 8 is the doping content of semiconductor distribution and device work on B-B directions in Fig. 6 is shown It is intended to；

Fig. 9 is the cross section structure schematic diagram of the multispectral camera device of another embodiment of the utility model；

Figure 10 is the electronic potential distribution schematic diagram at C-C in Fig. 9；And

Figure 11 is the cross section structure schematic diagram of the multispectral camera device of another embodiment of the utility model.

Embodiment

Example embodiment is described more fully with referring now to attached drawing.However, example embodiment can be with a variety of shapes Formula is implemented, and is not understood as limited to embodiment set forth herein；On the contrary, these embodiments are provided so that this practicality is new The design of example embodiment fully and completely, and will be comprehensively communicated to those skilled in the art by type.It is identical in figure Reference numeral represent same or similar structure, thus repetition thereof will be omitted.

Described feature, structure or characteristic can be incorporated in one or more embodiments in any suitable manner In.In the following description, there is provided many details are so as to provide fully understanding to the embodiment of the utility model.So And one of ordinary skill in the art would recognize that, without one or more in specific detail, or using other methods, constituent element, Material etc., can also put into practice the technical solution of the utility model.In some cases, be not shown in detail or describe known features, Material or operation are to avoid fuzzy the utility model.

Purport design according to the present utility model, the multispectral camera device of the utility model include：First opto-electronic conversion Unit, first photoelectric conversion unit include：First photoelectric conversion layer, for will be seen that light opto-electronic conversion is electric signal；The One conductive layer, can pass through visible ray and infrared light, be arranged at the incident side of first photoelectric conversion layer, first conductive layer Current potential is fixed in connection first；Second conductive layer, permeable to infrared, is arranged at the light emission side of first photoelectric conversion layer；With First image element circuit, first image element circuit are connected to second conductive layer；Second photoelectric conversion unit, is produced on a silicon On substrate and the light emission side of first photoelectric conversion unit is arranged at, second photoelectric conversion unit includes：Second photoelectricity Conversion layer, for being electric signal by infrared light opto-electronic conversion；3rd conductive layer, permeable to infrared, is arranged at second light The incident side of electric conversion layer；4th conductive layer, is arranged at the light emission side of second photoelectric conversion layer；With the second image element circuit, Second image element circuit is connected to the second photoelectric conversion layer or the 4th conductive layer.With reference to the accompanying drawings and examples to this reality It is described further with new technology contents.

Fig. 1 is referred to, it illustrates the structure diagram of the multispectral camera device of one embodiment of the utility model. It should be noted that the inter-layer position relation between illustrate only each component of multispectral camera device in Fig. 1, not right The specific set-up mode of component is limited between each layer.In Fig. 1For visible ray,For infrared light.Specifically, such as Shown in Fig. 1, in the embodiment of the utility model, which includes the first photoelectric conversion unit and the second photoelectricity Converting unit.

First photoelectric conversion unit includes the first photoelectric conversion layer 32, first electrode 31 (i.e. the first conductive layer), the second electricity Pole 33 (i.e. the second conductive layer) and the first image element circuit.The incident side that first electrode 31 is arranged at, can pass through visible ray and infrared Current potential VB1 is fixed in light, the connection of first electrode 31 first.33 permeable to infrared of second electrode, is arranged at the first photoelectric conversion layer 32 light emission side.First image element circuit connects second electrode 33.First photoelectric conversion layer 32 is used for it will be seen that light opto-electronic conversion is Electric signal, under the structure shown in Fig. 1, the first photoelectric conversion layer 32 can be fabricated to continuous continual film layer.

Second photoelectric conversion unit is produced on a silicon substrate and is arranged at the light emission side of the first photoelectric conversion unit.Second Photoelectric conversion unit includes the second photoelectric conversion layer 35, the 3rd electrode 34 (i.e. the 3rd conductive layer), (the i.e. the 4th leads the 4th electrode 36 Electric layer) and the second image element circuit.It is electric signal that second photoelectric conversion layer 35, which is used for infrared light opto-electronic conversion,.4th electrode 36 is set It is placed in the light emission side of the second photoelectric conversion layer 35.3rd electrode 34 is arranged at the incident side of the second photoelectric conversion layer 35, positioned at Between two photoelectric conversion layers 35 and second electrode 33.Current potential VB2 is fixed in 3rd electrode 34 connection second.Second image element circuit connects To the 4th electrode 36.

Further, in structure shown in Fig. 1, between being located at 33 and the 4th electrode 36 of second electrode due to the 3rd electrode 34, And current potential VB2 is fixed in connection second, therefore, the work of electrostatic screen can be played between 33 and the 4th electrode 36 of second electrode With, it is ensured that the first photoelectric conversion layer 32 and the second photoelectric conversion layer 35 can under the situation not interfered with each other independent acquisition it is corresponding Spectral region image.

In the embodiment shown in fig. 1, the first image element circuit includes one first output transistor G1, the first output transistor The source electrode connection second electrode 33 (the second conductive layer) of G1, its drain electrode are connected to data cable D1 (i.e. output signal line).Second Image element circuit includes one second output transistor G2.The source diffusion layer of second output transistor G2 connects the second photoelectric conversion layer 35, or the source electrode of the second output transistor G2 is connected to the 4th electrode 36 (the 4th conductive layer), its drain electrode is connected to data Line D2 (i.e. output signal line).

Fig. 2 is referred to, it illustrates the structural representation of the multispectral camera device of another embodiment of the utility model Figure.Point out to be with the embodiment difference shown in above-mentioned Fig. 1, the first image element circuit and the second image element circuit in Fig. 2 are basic APS (ACTIVE PIXEL SENSOR) image element circuit.As shown in Fig. 2, the first image element circuit includes the first reset transistor M1, the first amplifying transistor M2 and the first output transistor M3.Second image element circuit includes the second reset transistor M4, second Amplifying transistor M5 and the second output transistor M6.As shown in Fig. 2, the first reset transistor M1 is connected to second electrode 33, For carrying out reset processing to the current potential of second electrode 33.The grid of first amplifying transistor M2 is connected to second electrode 33 and will The quantity of electric charge signal of second electrode 33 is converted into voltage signal.First output transistor M3 be used for the first amplifying transistor M2 into Row selection output.The source diffusion layer of second reset transistor M4 is connected to the second photoelectric conversion layer 35 or its source electrode is connected to 4th electrode 36 simultaneously carries out reset processing to the current potential of source diffusion layer or source electrode.The grid connection of second amplifying transistor M5 Voltage signal is converted into the source electrode of the second reset transistor M4, and by the quantity of electric charge signal of the second reset transistor M4 source electrodes. Second output transistor M6 is used to make choice output for the second amplifying transistor M5.It is it should be noted that new in this practicality In the other embodiment of type, the APS circuits of existing other structures can also replace the knot of the basic APS image element circuits in Fig. 2 Structure, it will not be described here.

Further, (switching transistor is only included with the image element circuit for only reading photogenerated charge shown in above-mentioned Fig. 1 Image element circuit) it is different, in APS image element circuits, size and amplifying transistor (the such as first amplification crystal of output signal voltage Pipe M2 and the second amplifying transistor M5) the related all capacitances of grid (including the first photoelectric conversion layer and the second opto-electronic conversion The capacitance of layer itself and all parasitic capacitances) it is inversely proportional.So the capacitance for reducing photoelectric conversion layer is equal to improve signal Gain range.

Further, in the embodiment shown in above-mentioned Fig. 1 and Fig. 2, the grid of the second amplifying transistor M5 is connected to 4th electrode 36 of two photoelectric conversion units, this structure is connected with circuit provides a kind of possibility, that is, can be by Two photoelectric conversion layers are formed in silicon substrate, and by the way that the carrier of the second photoelectric conversion layer is completely or largely consumed To the greatest extent, so as to substantially reduce the capacitance of the second photoelectric conversion layer, using the size of above-mentioned capacitance and output signal voltage in anti- The relation of ratio, greatly improve voltage gain.And in addition the structure that this second photoelectric conversion layer is formed in silicon substrate also has One advantage, can exactly form thicker light (infrared light) absorption region, so that the conversion efficiency of the second photoelectric conversion layer Higher.

Fig. 3 is referred on this basis, and it illustrates the multispectral camera device of another embodiment of the utility model Cross section structure schematic diagram.Point out to be with the embodiment difference shown in above-mentioned Fig. 2, the second image element circuit is connected to the second photoelectricity Conversion layer, rather than the 4th electrode of connection.Specifically, in this embodiment, the second photoelectric conversion layer 35 is by infrared light photoelectricity Electric signal is converted to, the photogenerated charge of generation flows laterally to the source diffusion of the second reset transistor M4 of the second image element circuit Layer, so as to avoid the electric jamming of second electrode 33 (i.e. the second conductive layer).3rd electrode 34 (the 3rd conductive layer) can connect It is connected to fixed current potential or suspends.3rd electrode 34 can play between 33 and second photoelectric conversion layer 35 of second electrode The effect of electrostatic screen, it is ensured that the first photoelectric conversion layer 32 and the second photoelectric conversion layer 35 can be under the situations not interfered with each other The image of the corresponding spectral region of independent acquisition.

Fig. 4 is further referred to, it illustrates section of the multispectral camera device of another embodiment of the utility model Face structure diagram.Wherein, Fig. 4 is only illustrated by taking a pixel unit of multispectral camera device as an example.Specifically, In this embodiment, the multispectral camera device includes a silicon substrate.Silicon substrate is arranged at going out for the first photoelectric conversion unit Light side, the second photoelectric conversion layer of the second photoelectric conversion unit are integrated in silicon substrate.4th conductive layer is by the heavily doped of silicon substrate Miscellaneous silicon substrate or film forming are formed in the nesa coating of the heavily doped silicon substrate of silicon substrate.Wherein, the multilayer of the silicon substrate Structure sequentially includes along the direction of incident ray：First ion implanted layer of the first conduction type, the first conduction type First silicon epitaxial layer, the second ion implanted layer of the second conduction type, the first conduction type the second silicon epitaxial layer, The heavily doped diffusion layer and the second conductive-type of the layer-of-substrate silicon of first conduction type and a plurality of discontinuous first conduction types The heavily doped diffusion layer of type.Wherein, the first conduction type can be acceptor or hole conduction type；Second conduction type can be with For alms giver or electronic conduction type.

Further, in the embodiment shown in fig. 4, the layer-of-substrate silicon of the first conduction type is as the 4th conductive layer.Should The layer-of-substrate silicon of first conduction type is p-type heavily doped silicon substrate 540.The silicon epitaxial layer (including of first conduction type One silicon epitaxial layer and the second silicon epitaxial layer) it is that epitaxially grown layer 535 is lightly doped in p-type.Epitaxially grown layer is lightly doped in p-type 535 are arranged at the incident side of p-type heavily doped silicon substrate 540, it can be by extension on p-type heavily doped silicon substrate 540 The silicon semiconductor layer that mode is grown.Second ion implanted layer of the second conduction type is as second photoelectric conversion layer Central area, ion implanted layer 532 is lightly doped for N-type in the second ion implanted layer in Fig. 4, and N-type is lightly doped ion implanted layer 532 and sets It is placed in p-type to be lightly doped in epitaxially grown layer 535, epitaxially grown layer 535, which is lightly doped, by p-type surrounds.

First ion implanted layer of the first conduction type of silicon substrate is as the 3rd conductive layer.In the embodiment shown in fig. 4, First ion implanted layer includes the superficial layer 529 of p-type heavy doping raceway groove barrier layer 528 and p-type heavy doping.P-type heavy doping raceway groove The superficial layer 529 of barrier layer 528 and p-type heavy doping is arranged at the surface that the incident side of epitaxially grown layer 535 is lightly doped in p-type, and Connect one second fixation current potential.Wherein, the superficial layer 529 of p-type heavy doping is gently mixed in p-type by ion implanting or other modes The p-type or P+ type doped layer that the surface of miscellaneous epitaxially grown layer 535 is formed.Mixed for P+ type on p-type heavy doping raceway groove barrier layer 528 Diamicton.In the embodiment shown in fig. 4, electrode 521 is arranged at the incident side of whole silicon substrate.The superficial layer 529 of p-type heavy doping connects P-type heavy doping raceway groove barrier layer 528 is connected to, and the electrode 521 by being connected with p-type heavy doping raceway groove barrier layer 528 is connected to Exterior fixation controlling potential (i.e. above-mentioned second fixes current potential).

The heavily doped diffusion layer of a plurality of discontinuous first conduction types and the heavily doped diffusion layer of the second conduction type It is arranged on the silicon epitaxial layer of the first conduction type, as CMOS crystal in the first image element circuit and the second image element circuit The source electrode and the diffusion layer of drain electrode and the diffusion layer on raceway groove barrier layer of pipe；Wherein, at least one second conduction type is heavily doped The diffusion zone of miscellaneous diffusion layer extends to and connects the central area of second photoelectric conversion layer.Specifically, shown in Fig. 4 In embodiment, the heavily doped diffusion layer of the second conduction type is the diffusion layer 530 of N-type heavy doping.The diffusion layer of N-type heavy doping 530 are arranged at the surface that the incident side of epitaxially grown layer 535 is lightly doped in p-type, and extend to 540 direction of p-type heavily doped silicon substrate.

Output electrode 522 is arranged at the incident side of whole silicon substrate, and connects the diffusion layer 530 of N-type heavy doping.And then N The diffusion layer 530 that ion implanted layer 532 is connected to N-type heavy doping is lightly doped in type, and is connected to image element circuit by electrode 522 Switching transistor (such as second reset transistor M4 in Fig. 2), is ultimately connected to the fixed reset voltage or signal of outside Output line.When exterior fixed reset voltage is higher, it " will extract out " and exhaust N-type in other words ion implanted layer 532 is lightly doped All electronics, the N-type electronics potential well of light induced electron can be stored by being formed.

Ion implanted layer 532 and the diffusion layer 530 of N-type heavy doping, which is lightly doped, in N-type has certain coincidence (area connected Domain), so as to which N-type to be successfully lightly doped to the light induced electron " extraction " in ion implanted layer 532.The diffusion of N-type heavy doping The n-type doping concentration of layer 530 gradual along (i.e.) is lightly doped on the direction of ion implanted layer 532 close to N-type in Fig. 4 from top to bottom Reduce.Alternatively, in the region (region connected) of the two coincidence, its n-type doping concentration, which is slightly above in Fig. 4, to be extended laterally N-type the n-type doping concentration of ion implanted layer 532 is lightly doped, promote electronics so as to be formed after complete or partial depleted of electrons Take advantage of a situation the potential barrier gradient of the diffusion layer 530 for flowing to N-type heavy doping.It is connected to the output electrode of the diffusion layer 530 of N-type heavy doping 522 source electrode also with the reset transistor in external circuit is connected, thus using inside silicon substrate as the second photoelectric conversion layer The photogenerated charge that is lightly doped in ion implanted layer 532 of N-type export to external circuit, or in APS image element circuits, output electricity Pole 522 may be coupled to such as the grid of the second amplifying transistor M5 in Fig. 2, by the grid to the second amplifying transistor Channel current is modulated or is transformed to signal voltage and is output to external circuit.

The multispectral camera device further includes field oxide film 520 and interlayer dielectric 519.Field oxide film 520 is arranged at The incident side surface of silicon substrate, field oxide film 520 include multiple vias (reference can be made to electrode 521 and output electrode 522 are worn in Fig. 4 The region crossed), electrode 521 and output electrode 522 are set with layer, and are each passed through the diffusion layer 530 of via connection N-type heavy doping With p-type heavy doping raceway groove barrier layer 528.Interlayer dielectric 519 is arranged at the incident side of field oxide film 520, positioned at field oxide film 520 and first between photoelectric conversion unit, and covers electrode 521 and output electrode 522.

In the embodiment shown in fig. 4, first photoelectric conversion unit includes：First photoelectric conversion film 515 (i.e. first Photoelectric conversion layer), the first electric charge injection barrier film 514, the first nesa coating 513 (i.e. the first conductive layer), the second electric charge note Enter 516 and second nesa coating 517 (i.e. the second conductive layer) of barrier film.First electric charge injection barrier film 514 is arranged at the The incident side surface of one photoelectric conversion film 515.First nesa coating 513 is arranged at entering for the first electric charge injection barrier film 514 Current potential is fixed in light side surface, the first nesa coating 513 connection first.Second electric charge injection barrier film 516 is arranged at the first light The light extraction side surface of electricity conversion film 515.Second nesa coating 517 is arranged at the light emission side of the second electric charge injection barrier film 516 Surface.Wherein, 514 and second electric charge of the first electric charge injection barrier film injection barrier film 516 is the electric charge note of opposite polarity each other Enter barrier film, for example the first electric charge injection barrier film 514 can be for stopping the sky from the injection of the first nesa coating 513 Cave, correspondingly, the second electric charge injection barrier film 516 are to be used for stopping from 517 injected electrons of the second nesa coating, on the contrary Also it is right.First electric charge injection barrier film 514 and second electric charge injection barrier film 516 can be any of following material or more Kind combination：Silica, silicon nitride, hydrogenated silicon carbide, the silicon semiconductor film of heavy doping, the broad stopband such as oxide half of zinc indium gallium Conductor thin film material, zinc oxide, zinc sulphide, zinc selenide and cadmium sulfide.

First photoelectric conversion film 515 can be hydrogenation non crystal silicon film, substantially 1.5 microns to 2 microns of its thickness range, The thickness range can absorb the luminous ray more than more than 80%.Certainly, other photoelectric conversion materials to visible ray sensitivity In the embodiment that can be used for the utility model, for example can be II-VI compounds of group film such as cadmium telluride (CdTe), amorphous The mixing of the sull (IGZO) of selenium (a-Se) film or indium gallium Zn-ef ficiency, telluride selenium film, zinc telluridse and cadmium telluride Opto-electronic conversion film layer etc. made of thin-film material；Or can also be organic photoelectric film OPD (ORGANIC PHOTODIODE), Such as fullerene and its derivative：The polymer of 61 butyric acid formicester (PC61BM) of poly- 3 ethylthiophene (P3HT) and phenyl carbons.According to not With photoelectricity conversion thin film, implant blocking layer (such as the first electric charge injection barrier film in Fig. 4 in corresponding electronics or hole 514 and second electric charge injection barrier film 516) also can be different.Or can also be directly thin using transparency electrode and opto-electronic conversion The schottky barrier height formed between film prevents the electric charge from transparency electrode from injecting.When using some series dyes When OPD, by varying the chemical constituent of dopant material OPD can be allowed only sensitive to specific spectral band.So as to Remove from using the filter coating 511 in Fig. 4 (reference can be made to hereafter) so that the structure of the multispectral picture pick-up device of lamination-type mixed semiconductor It is simpler.

The multispectral camera device further includes grinding-flatening film 518, filter coating 511, photomask 510 and passivating film 512.Wherein, 518 and second nesa coating 517 of grinding-flatening film is set with layer.Grinding-flatening film 518 and second is transparent The thickness of conducting film 517 is almost equal.Second nesa coating 517 and grinding-flatening film 518 can pass through CMP The mode of (CHEMICALMECHANICAL POLISHING) forms smooth minute surface after carrying out surface grinding, to prevent surface The dark current that rough second nesa coating 517 causes high local fields and thus occurs.Filter coating 511 is arranged at The incident side of first photoelectric conversion unit.Photomask 510 is set with filter coating 511 with layer, and around filter coating 511.Passivating film 512 are arranged at filter coating 511,510 and first photoelectric conversion unit of photomask (is the first of the first photoelectric conversion unit in Fig. 4 Nesa coating 513) between.

Further, in the embodiment shown in fig. 4, the superficial layer 529 of p-type heavy doping is in field oxide film 520 and p-type It is lightly doped between epitaxially grown layer 535, border curve state can be full of or be filled up, thus greatly reduce surface defect state The dark current of generation.Also, be applied in second fixation current potential, have high electrical conductivity can p-type heavy doping superficial layer 529 Electrostatic screen can be played as the first photoelectric conversion film 515 of the first photoelectric conversion layer to the N as the second photoelectric conversion layer The effect of the interference of ion implanted layer 532 is lightly doped in type, so as to no longer need extra electrostatic screen layer.When p-type heavy doping The 250nm of absorption when the thickness of superficial layer 529 is less than to(for) infrared light can be ignored, and almost may be considered transparent half Conductor conductive layer.Second be applied on the superficial layer 529 of p-type heavy doping fixes current potential Current potential on 540 is identical, can also have certain potential difference to adjust the electronic potential point inside silicon substrate therebetween Cloth.

Further, in order to shield the interference from the first photoelectric conversion unit, in the embodiment of the utility model, the The central area of one ion implanted layer (i.e. the superficial layer 529 of p-type heavy doping in Fig. 4) and the second photoelectric conversion layer is (i.e. in Fig. 4 N-type ion implanted layer 532 is lightly doped) throwing of opposite first plane (can be 531 place plane of the first nesa coating) Shadow has an overlapping areas, and the area of the overlapping areas exceedes the superficial layer 529 of p-type heavy doping and N-type is lightly doped Reckling area (i.e. the area of the less projection of area) in two projections of ion implanted layer 532 on the first plane 85%.Second nesa coating 517 and the superficial layer 529 of p-type heavy doping are also mutual with one with respect to the projection in the first plane Overlapping region, the area of the overlapping areas is more than the second nesa coating 517 and the superficial layer 529 of p-type heavy doping The 85% of reckling area (i.e. the area of the less projection of area) in two projections in one plane.

Further, Fig. 5 is referred to, it illustrates the multispectral camera device of another embodiment of the utility model Cross section structure schematic diagram.Clearly disclosed unlike above-mentioned embodiment illustrated in fig. 4, in Fig. 5 the first photoelectric conversion layer and The output of second photoelectric conversion layer or the structure of reset transistor and position.Specifically, along in the incident direction of light, institute State multispectral camera device includes successively：Photomask 610 and filter coating 611, passivating film 612, the first photoelectricity set with layer turns Grinding-flatening film 618, the interlayer for change unit, setting with the second nesa coating 617 of the first photoelectric conversion unit with layer are exhausted Velum 619, oxide-film 620, the output electrode 622 of the second photoelectric conversion unit, the second nesa coating 617 of connection and it is used as the The output electrode 625 of the output electrode 623 of one photoelectric conversion unit, a switching transistor of the first photoelectric conversion unit of connection (wherein, output electrode 622, output electrode 623 and output electrode 625 are to be set with layer), the second photoelectricity opto-electronic conversion list of connection Member a switching transistor grid 626, connect the first photoelectric conversion unit a switching transistor grid 627 and Silicon substrate.

Wherein, the first photoelectric conversion unit includes the first nesa coating 613 (i.e. the first conductive layer), the first electric charge injects Barrier film 614, the first photoelectric conversion film 615 (i.e. the first photoelectric conversion layer), the second electric charge injection barrier film 616 and second are saturating Bright conducting film 617 (i.e. the second conductive layer).Silicon substrate includes the N-type weight of the output electrode 622 of the second photoelectric conversion unit of connection The diffusion layer 630 of doping, the diffusion layer 631 of the N-type heavy doping of connecting valve transistor output electrode 625, p-type heavy doping raceway groove Barrier layer 628, the superficial layer 629 of p-type heavy doping, ion implanted layer 632 is lightly doped in N-type, epitaxially grown layer 635 is lightly doped in p-type With 636 and p-type heavily doped silicon substrate 640.

In the embodiment shown in fig. 5, filter coating 611, the second nesa coating 617, the superficial layer 629 (of p-type heavy doping First ion implanted layer of one conduction type) and N-type (the second ion of the second conduction type of ion implanted layer 632 is lightly doped Implanted layer) projection on opposite first plane (i.e. the first conductive layer place plane) has an overlapping areas.The phase mutual respect The area in folded region is lightly doped more than filter coating 611, the second nesa coating 617, the superficial layer 629 of p-type heavy doping and N-type Reckling area (i.e. the area of a minimum projection of area) in four projections of ion implanted layer 632 on the first plane 85%.In other words, any two layers of projection in this four-layer structure is overlapped, and any two projects overlapping area More than the 85% of the projected area of the less projection of area among the two projections.And then eclipsed form can be substantially reduced The multispectral picture pick-up device of mixed semiconductor in the colour mixture optically that is likely to occur and electrically crosstalk the problems such as.

In addition, with embodiment illustrated in fig. 4 similarly, the N-type weight being connected with the output electrode 622 of the second photoelectric conversion unit The doping of (i.e.) is lightly doped on the direction of ion implanted layer 632 along close N-type in Fig. 5 from top to bottom for the diffusion layer 630 of doping Concentration is gradually reduced.And then epitaxially grown layer 635 is lightly doped for diffusion layer 630 to the p-type of N-type heavy doping in its result formed Doping concentration and majority carrier exhaust after electronic potential in the space-charge region that is formed gradient distribution can be found in Fig. 6 and Fig. 7.

Specifically, Fig. 6 is the close-up schematic view at D in above-mentioned Fig. 5, and Fig. 7 is partly leading on A-A directions in Fig. 6 Electronic potential distribution schematic diagram when body doping concentration distribution and device work.P1 is Electron potential energy curves, P2 partly to lead in Fig. 7 Body doping concentration curve.Specifically, phase between ion implanted layer 632 is lightly doped in the diffusion layer 630 and N-type of N-type heavy doping Connect and (have certain juxtaposition region), therefore, the concentration distribution of donor doping is formed in this juxtaposition region One close to flat step, the doping concentration which is less than in the semiconductor of output electrode 622 is significantly larger than N-type The doping concentration of (the electronics potential well region) of ion implanted layer 632 is lightly doped, 5 times can be differed therebetween and arrive an order of magnitude More than.

As shown in fig. 7, epitaxially grown layer 635 is lightly doped from p-type is lightly doped ion implanted layer 632 to N-type, then to N-type weight The diffusion layer 630 of doping, electronic potential distribution forms one, and to promote light induced electron E to drift about towards output electrode 622 continuous The gradient of decline.The potential energy gradient of this continuous monotonic decreasing can cause the efficiency that output electrode 622 collects light induced electron to show Write and improve, and reduce streaking.

In addition, along in the incident direction of light, doping type and concentration are also required for a rational distribution.Refer to figure 8, electronic potential when working it illustrates the doping content of semiconductor distribution in Fig. 6 on B-B directions and device is distributed signal Figure.In Fig. 8 P3 be Electron potential energy curves, P4 be doping content of semiconductor curve.Specifically, epitaxially grown layer is lightly doped in p-type 635 include first area 6351 between ion implanted layer 632 (i.e. the is lightly doped positioned at the superficial layer 629 and N-type of p-type heavy doping First silicon epitaxial layer of one conduction type) and positioned at N-type ion implanted layer 632 and p-type heavily doped silicon substrate is lightly doped Second area 6352 (i.e. the second silicon epitaxial layer of the first conduction type) between 640.In the doping concentration distribution of Fig. 8 In, epitaxially grown layer 635 is lightly doped by p-type surrounds since N-type is lightly doped around ion implanted layer 632, so as to subtract significantly The parasitic capacitance of epitaxially grown layer 635 and its neighboring area is lightly doped in small p-type.And again due to the superficial layer of p-type heavy doping 629 and 640 doping concentration of p-type heavily doped silicon substrate far above the N-type inside silicon substrate ion implanted layer 632, p-type to be lightly doped light The first area 6351 of doped epitaxial grown layer 635 and second area 6352, the possibility that its principal carrier is depleted is almost It is zero, therefore, can hold higher electric conductivity, maintains the superficial layer 629 and p-type heavily doped silicon substrate 640 of p-type heavy doping Fixation current potential and shield the first photoelectric conversion unit effect.As the position of light induced electron E in Fig. 8 and drift bearing institute The physical significance of annotation is such.Second photoelectric conversion layer or say the whole photoelectric conversion regions of near infrared light except including electricity The N-type that son exhausts is lightly doped outside ion implanted layer 632, further includes the first area 6351 that epitaxially grown layer 635 is lightly doped in p-type Be lightly doped in second area 6352 with N-type ion implanted layer 632 border on subregion (i.e. in Fig. 8 N-type be lightly doped ion note Enter a part of first area 6351 extended up and down outside layer 632 and second area 6352).

In this embodiment, whole second photoelectric conversion layer must have sufficiently high electric field strength separate light induced electron- Hole pair.If the however, electric field mistake near the border of p-type heavily doped region (i.e. the superficial layer 629 of p-type heavy doping in Fig. 8) When powerful, the described electric field is possible to interfacial insulating film (such as interlayer dielectric 619 and oxide-film 620 in Fig. 6) Dark current or dark current from electrode injection hale the second photoelectric conversion layer in silicon substrate.In order to balance the two reasons The device drive requirement thought, has been found that with calculating inventor disclosure satisfy that following two conditions by analysis, it becomes possible to very The conflicting driving requirement of above-mentioned two is balanced in big degree.

(d₁×N₁+d₂×N₂)>0.5×d₃×N₃；

(d₅×N₅+d₄×N₄)>0.5×d₃×N₃；

Wherein, d₁For thickness, the d of the first ion implanted layer of first conduction type₂For first conduction type Thickness, the d of first silicon epitaxial layer (i.e. first area 6351)₃For the second ion implanted layer of second conduction type Thickness, d₄For thickness, the d of the second silicon epitaxial layer (i.e. second area 6352) of first conduction type₅For described first Thickness, the N of the layer-of-substrate silicon of conduction type₁Doping concentration, N for the first ion implanted layer of first conduction type₂For institute State doping concentration, the N of the first silicon epitaxial layer of the first conduction type₃For the second ion implanting of second conduction type The doping concentration of layer, N₄Doping concentration, N for the second silicon epitaxial layer of the first conduction type₅For the silicon of the first conduction type The doping concentration of substrate layer.In order to ensure the sufficiently strong electric field in incident side near infrared light, allow p-type that epitaxial growth is lightly doped The hole of the first area 6351 (i.e. the first silicon epitaxial layer) of layer 635 is completely depleted, is an effective means, for this The following conditions, which are worked as, to be needed to meet.

d₂×N₂<0.5×d₃×N₃；

Wherein, d₂、d₃、N₂、N₃Implication be same as above.

Also obtained to allow the near infrared light of longer wavelength that the second area 6352 of epitaxially grown layer 635 is lightly doped in p-type Higher photoelectric conversion efficiency, it is also an effective means to make the hole of second area 6352 completely depleted, for this following bar Part should be met.

d₄×N₄<0.5×d₃×N₃；

Wherein, d₃、d₄、N₃、N₄Implication be same as above.

Further, as a kind of special case, when the thickness d of the first area 6351 of epitaxially grown layer 635 is lightly doped in p-type₂ With the thickness d of second area 6352₄When being zero or being approximately equal to zero, the doping that the alms giver of ion implanted layer 632 is lightly doped in N-type can Reached with the direct epitaxial layer that is lightly doped using the N-type on p-type heavily doped silicon substrate 640.

When image element circuit is APS or other have the function of the circuit that photogenerated charge is converted to signal voltage, table Levy signal detection sensitivity signal voltage conversion coefficient and photoelectric conversion layer total capacitance (photoelectric conversion layer in itself and with It is connected directly the sum of all parasitic capacitances in region) it is inversely proportional.When signal voltage is applied on the grid of amplifying transistor, The quantity considerably beyond the photogenerated charge being accumulated on grid is easy to the integration of transistor drain electric current within a certain period of time, So the conversion coefficient of this charge-voltage is also directly proportional with gain amplifier.

To further improve the signal detection sensitivity of multispectral camera device, Fig. 9 and Figure 10 provide the utility model Multispectral camera device another embodiment, significantly reduce photoelectric conversion layer using at least two modes in the embodiment Total capacitance.Please also refer to Fig. 9 and Figure 10, Fig. 9 shows the multispectral shooting dress of another embodiment of the utility model The cross section structure schematic diagram put, Figure 10 are the electronic potential distribution schematic diagram at C-C in Fig. 9.With reality shown in above-mentioned Fig. 5 to Fig. 8 Apply unlike example, the relation between the doping concentration and thickness of each layer in the silicon substrate is：d₁=0, d₂=0, and (d₅×N₅+d₄×N₄)>0.5×d₃×N₃.Wherein, d₁For thickness, the d of the first ion implanted layer of first conduction type₂For Thickness, the d of first silicon epitaxial layer of first conduction type₃For the second ion implanted layer of second conduction type Thickness, d₄For thickness, the d of the second silicon epitaxial layer of first conduction type₅Served as a contrast for the silicon of first conduction type Thickness, the N of bottom₃Doping concentration, N for the second ion implanted layer of second conduction type₄For the of the first conduction type The doping concentration of two silicon epitaxial layers, N₅For the doping concentration of the layer-of-substrate silicon of the first conduction type.

Specifically, in this embodiment, the multispectral camera device includes：First photoelectric conversion unit and the second light Electric conversion layer.

First photoelectric conversion unit includes：First photoelectric conversion layer, for will be seen that light opto-electronic conversion is electric signal； First conductive layer, is arranged at the incident side of first photoelectric conversion layer, and current potential is fixed in the first conductive layer connection first；With Second conductive layer, is arranged at the light emission side of first photoelectric conversion layer, connects the first image element circuit；

Second photoelectric conversion unit is arranged at the light emission side of first photoelectric conversion unit, it includes：Second light Electric conversion layer, for being electric signal by infrared light opto-electronic conversion；With the 4th conductive layer, second photoelectric conversion layer is arranged at Light emission side, by a silicon substrate heavily doped silicon substrate or film forming a silicon substrate heavily doped silicon substrate nesa coating structure Into current potential is fixed in the 4th conductive layer connection the 3rd.

In Fig. 9 and embodiment illustrated in fig. 10, the 4th conductive layer is made of the heavily doped silicon substrate of a silicon substrate.It is specific next Say, similar with embodiment described in above-mentioned Fig. 4 and Fig. 5, the multispectral camera device further includes a silicon substrate.In this embodiment In, it is the layer-of-substrate silicon of silicon substrate including the first conduction type, the second silicon epitaxial layer of the first conduction type, multiple discontinuous The second conduction type the second ion implanted layer and a plurality of discontinuous first conduction types heavily doped diffusion layer and The heavily doped diffusion layer of second conduction type.

As shown in figure 9, the layer-of-substrate silicon of the first conduction type is p-type heavily doped silicon substrate 940, the of the first conduction type Epitaxially grown layer 935 is lightly doped for p-type in two silicon epitaxial layers, and the second ion implanted layer of the second conduction type is light including N-type Ion implanted layer 933 is lightly doped in Doped ions implanted layer 932 and N-type, and the heavily doped diffusion layer of the second conduction type includes N-type weight The diffusion layer 931 of doping.Wherein, the incident side that epitaxially grown layer 935 is arranged at p-type heavily doped silicon substrate 940 is lightly doped in p-type.N Type is lightly doped ion implanted layer 932 and N-type is lightly doped ion implanted layer 933 and is arranged at p-type and entering for epitaxially grown layer 935 is lightly doped Ion implanted layer 932 is lightly doped including at least a N-type in the surface of light side, the second photoelectric conversion layer.The diffusion layer of N-type heavy doping 931 are arranged at the surface that the incident side of epitaxially grown layer 935 is lightly doped in p-type, and prolong to the direction of p-type heavily doped silicon substrate 940 Stretch.Further, silicon substrate further includes p-type heavy doping raceway groove barrier layer 928, and p-type heavy doping raceway groove barrier layer 928 is arranged at P The surface of the incident side of epitaxially grown layer 935 is lightly doped in type, and the side of ion implanted layer 932 is lightly doped positioned at N-type.

What the first output electrode 922 (output electrode of the second photoelectric conversion unit) was arranged at whole silicon substrate enters light Side, and N-type heavily doped diffusion layer 916 (heavily doped diffusion layer of the second conduction type) is connected, pass through N-type heavily doped diffusion layer Ion implanted layer 932 is lightly doped in the N-type of 916 the second photoelectric conversion layers of connection.

Further, first photoelectric conversion unit includes：The first photoelectric conversion film as the first photoelectric conversion layer 915th, hole injection barrier film 914, the first nesa coating 913 as the first conductive layer and the as the second conductive layer Two nesa coatings 917.In the embodiment shown in fig. 9, the first photoelectric conversion layer is the first photoelectric conversion film 915.Hole is injected Barrier film 914 is arranged at the incident side surface of the first photoelectric conversion film 915.First nesa coating 913 is arranged at hole injection The incident side surface of barrier film 914, and connect first and fix current potential.Second nesa coating 917 is arranged at the first opto-electronic conversion The light extraction side surface of film 915.Second nesa coating 917 connects the second output electrode 923, and the diffusion layer 931 of N-type heavy doping connects Connect the second output electrode 923 (i.e. the drain electrode of the switching transistor of the first photoelectric conversion unit).

Further, the multispectral camera device further includes the first light of first grid 927, second grid 926 and connection The output electrode 925 of one switching transistor of electric converting unit.Wherein, first grid 927, the second output electrode 923 and Output electrode 925 forms the switching transistor of the first photoelectric conversion unit of connection；Second grid 926, the first output electrode 922 with One output electrode forms the switching transistor of the second photoelectric conversion unit of connection.

The multispectral camera device, which further includes, to be arranged between the first photoelectric conversion unit and the second photoelectric conversion unit Interlayer dielectric 919, be arranged at the passivating film 912 (can be made of silicon nitride material) of the first photoelectric conversion unit incident side And it is arranged at 912 incident side of passivating film and the photomask 910 and filter coating 911 that are set with layer.

Further, with reference to Fig. 9 and embodiment illustrated in fig. 10, visible ray and near infrared light are incident from top to down in Fig. 9 Into multispectral camera device, from left and right incided in corresponding diagram 10 in multispectral camera device.Luminous ray quilt substantially First photoelectric conversion film 915 is absorbed, and near infrared light is perforated through the first photoelectric conversion film 915 and enters in silicon substrate, and in N Ion implanted layer 932 is lightly doped in type and p-type is lightly doped in epitaxially grown layer 935 and produces photo-generated carrier.With above-described embodiment not It is same, along in Fig. 9 on the direction of C-C, do not appoint between the first photoelectric conversion unit and the second photoelectric conversion unit What is applied in the electrostatic isolation layer of fixed current potential, and of the first photoelectric conversion unit only at the top of multispectral camera device One nesa coating 913 and p-type heavily doped silicon substrate 940 (here it is P+ doping) quilt positioned at multispectral camera device bottom It is applied with fixed current potential (i.e. above-mentioned first fixes current potential and the 3rd and fix current potential).The position of second photoelectric conversion unit, such as Shown in Figure 10, across whole N_D ^-Doped region (ion implanted layer 932 is lightly doped in N-type) simultaneously expands to part N_A ^-Epi dopant layer (P Epitaxially grown layer 935 is lightly doped in type), near infrared absorption, there is deeper absorption distance.It is higher that can obtain Conversion quantum efficiency while, and there is relatively low capacitance.As shown in Figure 10, light induced electron E can be first towards N-type after producing The bottom drift of trap.But they will not be stopped there, but as shown in above-mentioned Fig. 7, towards the N of heavy doping_D ⁺ Region (i.e. N-type heavily doped diffusion layer 916 in Figure 10) and electrode 922 do horizontal drift, and ion implanted layer is lightly doped in N-type 932 N traps are to be in the complete depletion of space charge region of carrier all the time.Transparent led from the second of the first photoelectric conversion unit The total capacitance of electrolemma 917 apparently is substantially equal to, the capacitance between the first nesa coating 913 and the second nesa coating 917 C1；Capacitance C2 between second nesa coating 917 and p-type heavily doped silicon substrate 940 is collectively constituted.Compared to Fig. 6's and Fig. 7 Structure, the capacity of capacitance C2 is since the interval of capacity plate antenna dramatically increases and significantly reduces.Second photoelectric conversion layer (including N-type Ion implanted layer 932 is lightly doped and the portion that ion implanted layer 932 is bordered on that is lightly doped with N-type is lightly doped in epitaxially grown layer 935 in p-type Subregion) in produce light induced electron collected by 916 and first output electrode 922 of N-type heavily doped diffusion layer, and first output Second nesa coating of electrode 922 and the N-type heavily doped diffusion layer 916 connected below and the first photoelectric conversion unit of getting along well 917 have upper and lower overlapping relation, and (i.e. the projection of the first output electrode and the second conductive layer with respect to plane where the first conductive layer does not weigh It is folded), so therebetween almost without parasitic capacitance, and then the problem of the appearance crosstalk of electric signal will not be caused.

In order to further reduce the capacitance from the space-charge region in electrical signal collection region, in first electrode 922 and Heavily doped region (i.e. N-type heavily doped diffusion layer 916 and N-type heavily doped diffusion layer 931 in Fig. 9) under two output electrodes 923 (it is in this embodiment N by the lightly doped region of same type_D ^-Doping, can be imported using ion implanting or other modes, That is ion implanted layer 932 is lightly doped in the N-type in Fig. 9 and ion implanted layer 933 is lightly doped in N-type) surrounded.Lightly doped region (can Ion implanted layer 932 is lightly doped referring to N-type in Fig. 9 and ion implanted layer 933 is lightly doped in N-type) importing so that PN junction space The length increase of charged region, so as to reduce the capacitance of the space charge layer of PN junction.

As shown in the electronic potential distribution map of Figure 10, in the electricity of the first nesa coating 913 of the first photoelectric conversion unit Position is higher than the current potential (i.e. first, which fixes current potential, fixes current potential higher than the 3rd) of p-type heavily doped silicon substrate 940, this peace deliberately Row is so that the photohole accumulation produced in the first photoelectric conversion film 915 behind the position of the second nesa coating 917, increases Adding the current potential of the second nesa coating 91, the space charge layer of epitaxially grown layer 935, which is lightly doped, in p-type in silicon substrate becomes wider, The capacitance C2 of space charge layer becomes smaller, so as to counteract other due to detecting the increased effect of capacitance caused by incident intensity Fruit, it is final so that the opto-electronic conversion curve of device is in transformation series that is interior linear and keeping higher charge-voltage in a big way Number.In order to realize that the current potential of the first nesa coating 913 is higher than the current potential of p-type heavily doped silicon substrate 940, in the present embodiment In, the combination of the first photoelectric conversion film 915 and the second nesa coating 917 must have an effect on electron injection barrier layer, and first The combination of nesa coating 913 and hole injection barrier film 914 must have the effect of hole blocking layer.Therefore, real shown in Fig. 9 Apply in example, the second nesa coating 917 is made of indium tin oxide semiconductor (ITO) material with larger work function.The One photoelectric conversion film 915, which can use, contains zinc selenide (ZnSe), zinc telluridse (ZnTe), cadmium telluride (CdTe) or telluride indium (InTe) semi-conducting material of compound, such as the mixing of the zinc telluridse (ZnTe) with compared with broad stopband and cadmium telluride (CdTe) such as Semi-conducting material.Hole injection barrier film 914, which uses, has N-type conduction simultaneously and transparency electrode 913 has higher contact performance At least one of zinc oxide (ZnO), zinc sulphide (ZnS), zinc selenide (ZnSe) and cadmium sulfide (CdS) are made.First is transparent Conducting film 913 can use tin indium oxide (ITO) or tin oxide (SnO2) material to be made.Wherein, the first photoelectric conversion film 915 Material can be vaporized on by way of crucible evaporation on silicon chip, so as to avoid using expensive PECVD or magnetron sputtering Equipment (must use this equipment) if when using amorphous silicon hydride (a-SiH) photoelectricity conversion thin film.

In addition should be clarified that, although all of above embodiment is substantially using the doping concentration in a region as certain One fixed numerical value illustrates the basic conception of the utility model and structure design, should be managed in the technical staff of the industry Solution, the numerical value of the doping concentration can carry out technological design, device design, driving using the average doping concentration in the region The implementation of the design of condition and above-mentioned various designs.

Further, Figure 11 is referred to, it illustrates the multispectral camera device of another embodiment of the utility model Cross section structure schematic diagram.Wherein, Figure 11 illustrate only the silicon substrate of multispectral camera device, and the structure of the silicon substrate It is roughly the same with Fig. 9 and embodiment illustrated in fig. 10, but be not limited thereto, the embodiment shown in Figure 11 can be applied equally to figure In embodiment shown in 4 and Fig. 5.Specifically, part unlike the embodiments above is, the multispectral camera device also wraps Include the reflectance coating of an infrared light.As shown in figure 11, the reflectance coating 1050 of infrared light is arranged at the light extraction of the second photoelectric conversion unit Side.Wherein, the reflectance coating 1050 of infrared light is a film to near-infrared strong reflection, and the reflectance coating 1050 of infrared light is superimposed In the light extraction side surface of the second photoelectric conversion unit.The reflectance coating 1050 of infrared light is arranged at p-type in the embodiment shown in fig. 11 The light extraction side surface of heavily doped silicon substrate 1040 (P+ silicon substrates).The reflectance coating 1050 of infrared light can be metallic aluminium or other are high The metal of reflection, or the reflectance coating based on multi-layered infrared light made of principle of interference.Since infrared ray is inside silicon substrate Absorption it is weaker, there is the not yet absorbed infrared ray in part to be reflected back toward the second photoelectricity in the reflectance coating 1050 of infrared light and turn Ion implanted layer 1032 is lightly doped in the N-type for changing layer, is converted into photoelectron again, adds overall infrared light conversion effect Rate.

Finally it is pointed out that although all of above embodiment is all to be buried in the structure of the N-type potential well of silicon substrate Illustrate for example, in the industry it is to be understood by the skilled artisans that same operation principle and Structural design idea is also suitable In the occasion of p-type potential well.

To sum up, the multispectral camera device of the utility model by the structure of inside of human body or tissue for information about, with Bidimensional, three-dimensional even dynamic image directly display out, substantially increase the visuality of veins beneath the skin or internal internal organs so that people Eye directly and real-time monitored can exactly know the position of blood vessel, blood vessel can be avoided when easy to operation or to blood vessel Special processing is done, helps to carry out diagnose and treat to the internal structure and tissue of human body, and the multispectral camera device can To be effectively prevented from for the electronic signal of the first photoelectric conversion layer and the second photoelectric conversion layer to be connected respectively to respective pixel Upper two electrode of circuit is interfered with each other by parasitic capacitance, and the output signal " colour mixture " being subsequently formed, or even signal The problems such as cancelling out each other or decay of amplitude.

Specific embodiment of the utility model is described above.It is to be appreciated that the utility model not office It is limited to above-mentioned particular implementation, those skilled in the art can make various deformations or amendments within the scope of the claims, This has no effect on the substantive content of the utility model.

Claims

1. a kind of multispectral camera device, it is characterised in that the multispectral camera device includes：

First photoelectric conversion unit, first photoelectric conversion unit include：

First photoelectric conversion layer, for will be seen that light opto-electronic conversion is electric signal；

First conductive layer, can pass through visible ray and infrared light, be arranged at the incident side of first photoelectric conversion layer, and described first Current potential is fixed in conductive layer connection first；

Second conductive layer, permeable to infrared, is arranged at the light emission side of first photoelectric conversion layer；With

First image element circuit, first image element circuit are connected to second conductive layer；

Second photoelectric conversion unit, is produced on a silicon substrate and is arranged at the light emission side of first photoelectric conversion unit, institute Stating the second photoelectric conversion unit includes：

Second photoelectric conversion layer, for being electric signal by infrared light opto-electronic conversion；

3rd conductive layer, permeable to infrared, is arranged at the incident side of second photoelectric conversion layer；

4th conductive layer, is arranged at the light emission side of second photoelectric conversion layer；With

Second image element circuit, second image element circuit are connected to the second photoelectric conversion layer or the 4th conductive layer.

2. multispectral camera device as claimed in claim 1, it is characterised in that first image element circuit includes the first output Transistor, its source electrode connect second conductive layer, its drain electrode is connected to output signal line；Second image element circuit includes Second output transistor, the source diffusion layer of second output transistor connect second photoelectric conversion layer, or connection To the 4th conductive layer, its drain electrode is connected to output signal line.

3. multispectral camera device as claimed in claim 1, it is characterised in that

First image element circuit is produced on the silicon substrate, it includes：

First reset transistor, is connected to the second conductive layer, for carrying out reset processing to the current potential of second conductive layer；

First amplifying transistor, its grid are connected to second conductive layer and turn the quantity of electric charge signal of second conductive layer Change voltage signal into；With

First output transistor, for making choice output to first amplifying transistor；

Second image element circuit is produced on the silicon substrate, it includes：

Second reset transistor, its source diffusion layer are connected to second photoelectric conversion layer or are connected to the 4th conductive layer And reset processing is carried out to the current potential of the source diffusion layer；

Second amplifying transistor, its grid is connected to the source electrode of second reset transistor, and resets crystal by described second The quantity of electric charge signal of pipe source electrode is converted into voltage signal；With

Second output transistor, for making choice output to second amplifying transistor.

4. multispectral camera device as claimed any one in claims 1 to 3, it is characterised in that the 3rd conductive layer connects Connect the second fixation current potential or in electrically floating state；4th conductive layer is connected to the 3rd fixation current potential.

5. multispectral camera device as claimed in claim 4, it is characterised in that the sandwich construction of the silicon substrate is along incidence The direction of light sequentially includes：

First ion implanted layer of the first conduction type, as the 3rd conductive layer, the thickness of first ion implanted layer For d₁, its doping concentration is N₁；

First silicon epitaxial layer of the first conduction type, the thickness of first silicon epitaxial layer is d₂, its doping concentration is N₂；

Second ion implanted layer of the second conduction type, as the central area of second photoelectric conversion layer, described second from The thickness of sub- implanted layer is d₃, its doping concentration is N₃；

Second silicon epitaxial layer of the first conduction type, the thickness of second silicon epitaxial layer is d₄, its doping concentration is N₄；

The layer-of-substrate silicon of first conduction type, as the 4th conductive layer, the thickness of the layer-of-substrate silicon is d₅, its doping is dense Spend for N₅。

6. multispectral camera device as claimed in claim 5, it is characterised in that the silicon substrate further includes：

The heavily doped diffusion layer of a plurality of discontinuous first conduction types and the heavily doped diffusion layer of the second conduction type, are set On first silicon epitaxial layer, the source as CMOS transistor in first image element circuit and the second image element circuit The diffusion layer of the diffusion layer and raceway groove barrier layer of pole and drain electrode；The expansion of the heavily doped diffusion layer of at least one second conduction type Scattered region extends to and connects second ion implanted layer.

7. multispectral camera device as claimed in claim 5, it is characterised in that the doping concentration of each layer in the silicon substrate Relation between thickness is：

(d₁×N₁+d₂×N₂)>0.5×d₃×N₃；And

(d₅×N₅+d₄×N₄)>0.5×d₃×N₃。

8. multispectral camera device as claimed in claim 5, it is characterised in that the doping concentration of each layer in the silicon substrate Relation between thickness is：d₂×N₂<0.5×d₃×N₃。

9. multispectral camera device as claimed in claim 5, it is characterised in that the doping concentration of each layer in the silicon substrate Relation between thickness is：d₄×N₄<0.5×d₃×N₃。

10. multispectral camera device as claimed in claim 5, it is characterised in that the doping of each layer in the silicon substrate is dense Spend thickness between relation be：d₁=0, d₂=0, and (d₅×N₅+d₄×N₄)>0.5×d₃×N₃。

11. the multispectral camera device as any one of claim 5 to 10, it is characterised in that first conductive-type Type is acceptor or hole conduction type；Second conduction type is alms giver or electronic conduction type.

12. the multispectral camera device as any one of claim 5 to 10, it is characterised in that the second ion note Enter the doping concentration of layer, on the direction perpendicular to incident ray, towards the second reset transistor of second image element circuit The extension section of source diffusion layer gradually increase, and form a gesture after making the carrier depletion in second ion implanted layer Gradient is built, the photo-generated carrier of the second photoelectric conversion layer described in the potential barrier gradient-driven is towards second reset transistor Source diffusion layer drifts about and the obstruction without potential barrier.

13. multispectral camera device as claimed in claim 1, it is characterised in that in second conductive layer and silicon substrate The projection that plane where relatively described first conductive layer in the central area of second photoelectric conversion layer is formed has an overlapped area Domain, and the area of the overlapping areas exceedes the two of the central area of second conductive layer and second photoelectric conversion layer The 85% of reckling area in a projection.

14. multispectral camera device as claimed in claim 1, it is characterised in that second conductive layer and the 3rd conductive layer The projection that plane where relatively described first conductive layer is formed has an overlapping areas, and the area of the overlapping areas More than 85% of reckling area in two projections of second conductive layer and the 3rd conductive layer.

15. multispectral camera device as claimed in claim 1, it is characterised in that first photoelectric conversion unit further includes：

First electric charge injects barrier film, the incident side surface of first photoelectric conversion layer is arranged at, positioned at first photoelectricity Between conversion layer and first conductive layer；

Second electric charge injects barrier film, the light extraction side surface of first photoelectric conversion layer is arranged at, positioned at first photoelectricity Between conversion layer and second conductive layer.

16. multispectral camera device as claimed in claim 15, it is characterised in that the first electric charge injection barrier film and institute The second electric charge injection barrier film is stated as any of following material or multiple combinations：

Silica, silicon nitride, hydrogenated silicon carbide, the silicon semiconductor film of heavy doping, the broad stopband such as oxide of zinc indium gallium are partly led Film material, zinc oxide, zinc sulphide, zinc selenide and cadmium sulfide.

17. multispectral camera device as claimed in claim 15, it is characterised in that first photoelectric conversion layer includes：Hydrogen Change amorphous silicon membrane, amorphous selenium film, lead oxide film, the sull of indium gallium Zn-ef ficiency, telluride selenium film, zinc telluridse and Opto-electronic conversion film layer made of the mixed film material of cadmium telluride.

18. multispectral camera device as claimed in claim 1, it is characterised in that the multispectral camera device, which further includes, to be ground Planarization film is ground, the grinding-flatening film is set with second conductive layer with layer.

19. multispectral camera device as claimed in claim 1, it is characterised in that the multispectral camera device further includes one The reflectance coating of infrared light, the reflectance coating of the infrared light are arranged at the light emission side of the 4th conductive layer.