CN207116431U - Multispectral camera device - Google Patents
Multispectral camera device Download PDFInfo
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- CN207116431U CN207116431U CN201721039105.3U CN201721039105U CN207116431U CN 207116431 U CN207116431 U CN 207116431U CN 201721039105 U CN201721039105 U CN 201721039105U CN 207116431 U CN207116431 U CN 207116431U
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Abstract
The utility model provides a kind of multispectral camera device, and direction of the multispectral camera device along incident ray includes successively：Color filter layers, including multiple colored filters, for the light optionally through special spectrum scope；First transparency electrode layer；First photoelectric conversion layer, for photoelectrically changing visible ray as electric signal；First continuous surface, its segment difference is less than 5nm, by collecting visible photosignal and being formed for the first dielectric film between the pixel electrode array and pixel electrode of near infrared light transmission, first photoelectric conversion layer is between color filter layers and the first continuous surface, and is uninterruptedly covered on the first continuous surface；Second power transformation transform layer, for photoelectrically changing near infrared light as electric signal；The circuit devcie of the electric signal from the first photoelectric conversion layer and the second photoelectric conversion layer is handled respectively.Multispectral camera device provided by the utility model realizes the multispectral shooting of high image resolution.
Description
Technical field
It the utility model is related to medical auxiliary equipment field, more particularly to a kind of multispectral camera device.
Background technology
Infrared photography device is widely used in medical image diagnosis and punctures auxiliary equipment, night monitoring shooting, night row
Car images, living things feature recognition, robot vision, the field such as detection of food quality and industrial goods surface quality.Believe mobile
The epoch of breath terminal, which are applied to cell-phone camera etc., can then promote more colourful application and developments to come out.The wavelength of human eye sensitivity
Scope is the spectral region of the so-called visible ray from 400nm to 760nm, however use different light sensitive materials picture pick-up device and
System, its photoelectric respone can be extended to far infrared band from X ray wave band, and then using sightless electronic image information can
See that the form of light is shown, it is possible to allow human eye " direct " to see.As described above, in view of human eye it is inherent can only see and
Visible images are identified, original sightless electromagnetic radiation image and visible images are compared to each other by real-time on-site, could be right
The understanding of external object embodies, and the memory for visible images that could be conventional with human brain is interrelated, could be to same
The various spectral characteristics of object do a comprehensive judgement and information processing.
The multispectral camera system using the dual camera of visible ray and infrared light is developed for this purpose, but is had
Fiber crops on the bulky not readily portable and high Cost Problems brought, and different optical axis the systems image alignment and processing that bring
It is tired.In order to avoid this problem, people are also developed using one both to visible ray sensitivity, and to the image pick-up device of infrared photaesthesia
Part, such as CCD the or CMOS picture pick-up devices being produced on silicon chip, point different periods gather and handled visible ray and red
The image of outer optical band.But it is this either use mechanical chopper or electronic shutter, not only bring system construction
With the complexity of driving, and the image of accurate different spectrum can not be obtained from real time.
Utility model content
For in the prior art the defects of, the purpose of this utility model is to provide multispectral camera device, realizes height
The multispectral shooting of resolution.
According to one side of the present utility model, there is provided a kind of multispectral camera device, along the direction of incident ray according to
It is secondary including：Color filter layers, include the array of multiple colored filters, for the light optionally through special spectrum scope
Line；First transparency electrode layer, passed through for visible ray and near infrared light；First photoelectric conversion layer, for photoelectrically changing visible ray
For electric signal；First continuous surface, first continuous surface are passed through by the electric signal and confession near infrared light of collection visible ray
The pixel electrode array of multiple pixel electrodes composition of second transparency electrode layer and the first insulation between pixel electrode
Film is formed, and first photoelectric conversion layer is between first transparency electrode and the first continuous surface, and first photoelectricity becomes
Layer is changed uninterruptedly to be covered on first continuous surface；Second photoelectric conversion layer, for photoelectrically changing near-infrared
Light is electric signal；And the circuit device of the electric signal from first photoelectric conversion layer and the second photoelectric conversion layer is handled respectively
Part.
Alternatively, the first continuous surface that the second transparency electrode layer and the first dielectric film are formed is at least via chemistry
Mechanical lapping (Chemical Mechanical Polishing or CMP) technique causes the segment difference of the first continuous surface to be less than
5nm, and the Technology for Heating Processing more than 300 degree Celsius, surface stress caused by eliminate mechanical milling tech and to second
The material of transparency electrode does pattern handling.
Alternatively, it is thin that interlayer electrically conducting transparent is also included between the second transparency electrode layer and second photoelectric conversion layer
Film is to do electrostatic isolation, the near infrared light of the interlayer transparent conductive film to the first photoelectric conversion layer and the second photoelectric conversion layer
Transmitance is more than 60%.
Alternatively, include successively along the incident direction of light, the visible photoelectric conversion layer：First electronic barrier layer；
First electric field cushion, formed by trace doped p-type hydrogenated amorphous silicon layer；Photoelectric conversion layer, the hydrogenation adulterated by trace P type
Amorphous silicon layer is formed；Second electric field cushion, formed by trace doped N-type hydrogenated amorphous silicon layer；And second hole barrier
Layer.
Alternatively, include successively along the incident direction of light, the visible photoelectric conversion layer：First hole blocking layer；
First electric field cushion, formed by trace doped N-type hydrogenated amorphous silicon layer；Photoelectric conversion layer, the hydrogenation adulterated by trace P type
Amorphous silicon layer is formed；Second electric field cushion, formed by trace doped p-type hydrogenated amorphous silicon layer；And second electronic blocking
Layer.
Alternatively, a-SiH or a-SiC including the doping of p+ types of the first electronic barrier layer and the second electronic barrier layer are thin
Film, NiO films or Sb2S3Film, the first electronic barrier layer and the second electronic barrier layer thickness are between 20nm to 100nm.
Alternatively, first hole blocking layer and the second hole blocking layer include the a-SiH or a-SiC of n+ types doping
Film, the first hole blocking layer and the second hole blocking layer thickness are between 20nm to 100nm.
Alternatively, the first hole blocking layer and the second hole blocking layer include undoped a-SiN films or a-SiO2
Film, the thickness of first hole blocking layer and the second hole blocking layer is between 5nm to 50nm.
Alternatively, the first hole blocking layer and the second hole blocking layer include the oxide skin(coating) of rare earth metal, and described first
The thickness of hole blocking layer and the second hole blocking layer is between 5nm to 50nm.
Alternatively, the first hole blocking layer and the second hole blocking layer include the oxide containing In, Ga, Zn metal, the
The thickness of one hole blocking layer and the second hole blocking layer is between 20nm to 200nm.
Alternatively, the first transparency electrode layer and second transparency electrode layer of the first photoelectric conversion layer both sides, one of them work
To be applied in the negative electrode compared with low potential, as the anode for being applied in high potential, the work function of negative electrode it is more than anode wherein another
Work function.
Alternatively, the negative electrode or anode include In and Tin metal oxide, such as ITO, wherein negative electrode oxygen content
More than the oxygen content of anode.
Alternatively, in the pixel electrode array, adjacent pixel electrode is smaller than 10um, and is more than or equal to
0.5um。
In view of this, the utility model will include electronics and hole implant blocking layer, electric field cushion and photoelectric conversion layer
Plural layers be deposited on the first continuous surface no better than minute surface of the segment difference less than 5nm after, each pixel of separation is electric
The intensity of the edge of pole and the fringe field at turning is just significantly reduced, so as to reduce visible photoelectric conversion layer in pixel electrode
The local electric leakage stream of edge.In addition, the utility model is also by electrons barrier layer in visible photoelectric conversion layer and close
The setting of electric field buffering area near electrons barrier layer, the dark current from anode/cathode injection is reduced, is improved
The uniformity and signal to noise ratio of signal.
Electronics or hole blocking layer have the asymmetric barrier height to electronics or hole, so as to being formed for electronics or
The one-side of person hole passes through selectivity.The electronics of the insulation film of oxide or nitride or the I-V of hole blocking layer are special
Property is similar to MIS tunnel diodes, and the probability that carrier crosses barrier height is strongly depend on barrier height and thickness and gesture
Build the electric-field intensity at both ends.When potential barrier thickness doubles, it is even more more that electric current may decline three orders of magnitude.It is this strong
It is non-linear cause the first pixel electrode between transverse conductance be suppressed substantially.And stronger electric field and relatively thin insulation
Film barrier layer can then allow single carrier one direction to pass through.
It is adjacent due to this anisotropic conductive characteristic of electronics of the film forming on the first continuous surface or hole blocking layer
Horizontal Leakage Current between pixel electrode is suppressed, so as to which light-to-current inversion film need not enter according to the size of each pixel electrode
Row segmentation is islanding.Device architecture and manufacturing process are not only simplify, and improves the effective rate of utilization of light-to-current inversion film, is gone
Except the abutment wall leakage current after islanding, colour mixture caused by essentially eliminating large angle incidence light and photoelectricity crosstalk, eliminate
The problem of in order to prevent colour mixture and crosstalk and low light utilization caused by the excessive photomask of use.By the above-mentioned means, pixel
Spacing can narrow down to even 0.5um~10um distance, and not sacrifice the effective vent rate of the first light-to-current inversion film layer substantially,
The multispectral camera device for realizing high image resolution and high sensitivity and depositing.
Brief description of the drawings
By reading the detailed description made with reference to the following drawings to non-limiting example, other spies of the present utility model
Sign, objects and advantages will become more apparent upon：
Fig. 1 shows a kind of sectional view of multispectral camera device；
Fig. 2 shows the sectional view of the multispectral camera device of the utility model embodiment；
Fig. 3 to Figure 10 shows the manufacturing process of the multispectral camera device of the utility model embodiment；
The energy band diagram of two kinds of visible photoelectric conversion layers is shown respectively in Figure 11 and Figure 12；
Figure 13 shows the performance for the ito thin film that thickness is 80nm.
Embodiment
Example embodiment is described more fully with referring now to accompanying drawing.However, example embodiment can be with a variety of shapes
Formula is implemented, and is not understood as limited to embodiment set forth herein；On the contrary, these embodiments are provided so that this practicality is new
The design of example embodiment fully and completely, and will be comprehensively communicated to those skilled in the art by type.It is identical in figure
Reference represent same or similar structure, thus repetition thereof will be omitted.
Described feature, structure or characteristic can be incorporated in one or more embodiments in any suitable manner
In.In the following description, there is provided many details fully understand so as to provide to embodiment of the present utility model.So
And one of ordinary skill in the art would recognize that, without one or more in specific detail, or using other methods, constituent element,
Material etc., the technical solution of the utility model can also be put into practice.In some cases, be not shown in detail or describe known features,
Material is operated to avoid fuzzy the utility model.
Referring first to Fig. 1, Fig. 1 shows a kind of sectional view of multispectral camera device of inventor's invention.This is multispectral to take the photograph
As the visible photoelectric conversion layer (a-SiH films 132) of device is island structure, the light of a part of wide-angle oblique incidence may
In the substrate for reaching the silicon wafer of bottom through colored filter 141 and upper transparent electrode, induced leakage current is caused.In order to anti-
Only this leakage light, black matrix 142 must sufficiently wide and covering part a-SiH photodiodes 132 light-receiving area.Such as figure
Shown, in the width of a pixel, only opening (part for setting colored filter 141), which is only, can be used for probing light
Valid window, the photosignal on other areas just slattern.Due to the a-SiH photodiodes 132 of island, along abutment wall
Dark current A1 be likely to turn into the major part of dark current and resistance in the dark noise.In addition, have in a-SiH photodiodes 132
There are the hole in a constant impedance and the p+ doped layers of parasitic capacitance and in n+ doped layers and lateral transport the electric current A2 and A3 of electronics,
It is then the important root for the signal delay for causing a-SiH photodiodes 132.If not to the a-SiH photoelectricity two of each pixel
Pole pipe 132 is dielectrically separated from, and in the heavily doped layer of lower floor, in n+ doped layers, will produce the transverse direction between adjacent pixel
Electric charge flows, and so as to just obscure the profile of image detail, reduces resolution capability of the device to image detail in other words, also
It is reduction of effective resolution of picture pick-up device.
In order to solve the defects of above-mentioned, the utility model provides a kind of multispectral camera device, along the side of incident ray
To including successively：Color filter layers, include the array of multiple colored filters, for optionally through special spectrum scope
Light；First transparency electrode layer, passed through for visible ray and near infrared light；First photoelectric conversion layer, can for photoelectrically changing
It is electric signal to see light；First continuous surface, its segment difference are less than 5nm, first continuous surface by collection visible ray electric signal
And it is available for the pixel electrode array (being made up of multiple pixel electrodes of the second transparency conducting layer) of near infrared light transmission and is located at
The first dielectric film between pixel electrode is formed, and first photoelectric conversion layer is in first transparency electrode layer and the first continuous table
Between face, and first photoelectric conversion layer is uninterruptedly covered on first continuous surface；Second light-to-current inversion
Layer, positioned at the lower section of the second transparency conducting layer, for photoelectrically changing near infrared light as electric signal；And processing comes from institute respectively
State the circuit devcie of the electric signal of the first photoelectric conversion layer and the second photoelectric conversion layer.
With reference to each brief description of the drawings each embodiment provided by the utility model.
Referring to Fig. 2, Fig. 2 shows the sectional view of the multispectral camera device of the utility model embodiment.Light more shown in Fig. 2
Compose camera device includes color filter layers, first successively in the direction along incident ray (such as light 241, light 242)
Transparent electrode layer 229, visible photoelectric conversion layer (i.e. the first photoelectric conversion layer) infrared electro transform layer (i.e. second light-to-current inversion
Layer) 211 and circuit devcie.In the present embodiment, color filter layers and visible photoelectric conversion layer be formed on silicon substrate 210 it
On, infrared electro transform layer 211 is formed in silicon substrate 210.
Color filter layers include black matrix 231 and be arranged on black matrix 231 opening multiple colored filters 232 formed
Array.Colored filter 232 is used for the light optionally through special spectrum scope.In the present embodiment, colorized optical filtering
Piece 232 can include Red lightscreening plate, blue color filter and green color filter to pass through the light of red, blueness and green respectively
Line.In addition to these luminous rays, no matter through which kind of spectral region luminous ray, colored filter 232 also can pass through
More than 50% near infrared light.Infrared electro transform layer 211 is used to photoelectrically change near infrared light as electric signal.Infrared electro becomes
Change hole depletion layer or depleted of electrons layer that layer 211 can be formed in silicon substrate 210.Infrared electro transform layer 211 it is red
The whole or most areas in outer light-to-current inversion region are covered by corresponding colored filter 332.
It can be seen that photoelectric conversion layer may include the first doped layer 226, (such as the a-SiH of photoelectric conversion layer 227 in the present embodiment
Film) and the second doped layer 228.First doped layer 226 and the second doped layer 228 can be used as hole/electronic barrier layer.Visible ray
Electric transform layer is used to photoelectrically change visible ray.In the present embodiment, it is seen that the near infrared light transmitance of photoelectric conversion layer is more than
50%.It can be seen that throwing of the photoelectric conversion layer (226~228) in the plane (i.e. the plane of silicon substrate 210) of multispectral camera device
Shadow covers the position between colored filter 232 and colored filter 232.In other words, it is seen that photoelectric conversion layer (226~228)
It is continuous continual film layer in the plane of silicon substrate 210.So, because visible photoelectric conversion layer (226~228) is continuous
Continual film layer, enter without there is the visible ray 241 of large angle incidence by the gap of visible photoelectric conversion layer and then arrival
Silicon substrate 210, by such setting, the waste of visible photosignal can be reduced, reduce visible images to infrared light
The interference of image and the resolution for improving multispectral camera device.
Specifically, it is as shown in Fig. 2 also saturating including second between infrared electro transform layer 211 and visible photoelectric conversion layer
Prescribed electrode layer.Multiple pixel electrodes 224 of second transparency electrode layer form pixel electrode array.Also wrapped between pixel electrode 224
Include the first dielectric film 225.Multiple 224 pixel electrodes of pixel electrode array and the first dielectric film 225 convert backwards to infrared electro
The side of layer 211 forms the first continuous surface 292.The segment difference of first continuous surface 292 is less than 5nm.It can be seen that photoelectric conversion layer in
Continuous continual film layer is formed on first continuous surface 292.First continuous surface 292 can grind picture by CMP
Plain electrod-array and the first dielectric film are formed.It will be seen that photoelectric conversion layer (226~228) is deposited on segment difference less than 5nm almost
After on the surface of minute surface, the intensity of the fringe field at electrode edge and turning is just significantly reduced, so as to reduce a-SiH
The local leakage current of film 227.This local electric leakage circulation is normally due to caused by two factors：The point effect of electrode causes
High local fields；Relatively flat area, the thickness for covering the film at electrode edge or segment difference edge are smaller.It is new in this practicality
In type, the situation of local electric leakage stream is avoided by the segment difference that is substantially reduced or no segment difference.In the present embodiment, second is transparent
Also include interlayer transparent conductive film 221 between electrode layer and infrared electro transform layer 211.Interlayer transparent conductive film 221 can
To be transparent conductive oxide nesa coating, for interlayer electrostatic isolation.The interlayer transparent conductive film 221 is connected to inside
Or outside control voltage, so as to formed with top between visible photoelectric conversion layer (226~228) electric capacity and/or with it is infrared
Electric capacity is formed between photoelectric conversion layer 211.Interlayer transparent conductive film 221 covers the absolute portions area of pixel electrode, with
And cover the most areas of the infrared electro domain transformation of infrared electro transform layer 211.
In a change case of the present utility model, it is seen that photoelectric conversion layer includes 10-5~10-4Magnitude it is trace doped
P-type hydrogenated amorphous silicon layer as the first electric field cushion (label 53 in such as Figure 11), 10-5The minimum trace doped P of magnitude
Type hydrogenated amorphous silicon layer is as photoelectric conversion layer (label 54 in such as Figure 11), 10-5~10-4The trace doped N-type hydrogenation of magnitude
Amorphous silicon layer is as the second electric field cushion (label 55 in such as Figure 11).Specifically, in the picture close to second transparency electrode layer
Micro B is imported in PECVD reative cells during the a-SiH forming thin films of plain electrode (label 51 in such as Figure 11)2H6Gas, it is right
A-SiH films do micro p-type doping, to form weak p-type hydrogenated amorphous silicon layer 53.The part in 53 regions under the driving of electric field
The space charge of the negative electrical charge formed after hole depletion can suitably relax the highfield near the second electronic barrier layer 52, so as to subtract
The efficiency of few electron injection, so this region 53 is also referred to as the second electric field buffering area.In close first transparency electrode layer (such as
Label 57 in Figure 11) a-SiH films film forming procedure in micro PH is imported in PECVD reative cells3Gas, to a-SiH
Film does micro n-type doping, to form the hydrogenated amorphous silicon layer 55 of weak N-type.The part electricity in region 55 under the driving of electric field
The space charge for the positive charge that son is formed after exhausting can suitably relax the highfield near the first hole blocking layer 56, so as to reduce
The efficiency of hole injection, this region 55 are also referred to as the first electric field buffering area.Thus, the height electricity in surface area contact can be reduced
Field and the injection dark current thus triggered.Above-mentioned 10 are done in amorphous silicon hydride photoelectric conversion layer (label 54 in such as Figure 11)-5Amount
The p-type doping of level mainly undoped with amorphous silicon hydride the conductive performance of faint N-type is presented, minimum micro p-type doping is
Faint N-type can be changed into the intrinsic types of I in other words (Intrinsic conduction type).
The pixel electrode (label 51 in such as Figure 11) of second transparency electrode layer and trace doped p-type hydrogenated amorphous silicon layer 53
Between also include the second electronic barrier layer 52.Second electronic barrier layer 52 alternatively, for p+ types doping thickness about in 20nm
To 100nm a-SiH either a-SiC films or undoped thickness about in 5nm to 50nm a-SiN films or a-
SiO2The insulation films such as film.
First transparency electrode layer (label 57 in such as Figure 11) also includes between trace doped N-type hydrogenated amorphous silicon layer 55
First hole blocking layer 56.First hole blocking layer 56 can include the oxide skin(coating) of rare earth metal, first hole blocking layer
56 thickness can be between 5nm to 50nm.First hole blocking layer 56 can also be the thickness of n+ types doping about in 20nm
To 100nm a-SiH either a-SiC films or undoped thickness about in 5nm to 50nm a-SiN films or a-
SiO2The insulation films such as film.First hole blocking layer can also be that one layer includes In, Ga, Zn oxide, and its thickness exists
Between 20nm to 100nm.
When specifically, using semiconductor material with wide forbidden band film, for example the oxide of the metal such as Sn, In, Ni, Ga is partly led
Body material, or a-SiC, a-SiN, a-SiO2Deng material, the mobility of its holoe carrier and the product in life-span well below
The product of electron mobility and electron lifetime, so as to form the blocking effect to hole injection.In addition, studied through inventor
It was found that the oxide of some rare earth metals, the mobility of its holoe carrier and the product in life-span are well below electron mobility
With the product of electron lifetime, so as to formed to hole injection blocking effect.There is very much class according to congeners on the periodic table of elements
Like the principle of characteristic, the oxide of these following colourless or light thuliums, for example light rare earth metal lanthanum (La), cerium
(Ce) gadolinium (Gd) of, neodymium (Nd), promethium (Pm), samarium (Sm), and heavy rare earth metal, dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm),
Ytterbium (Yb), lutetium (Lu), scandium (Sc), the oxide or nitride of yttrium (Y) can be used in the visible photoelectricity for suppressing resistance in the dark injection
Near the anode of film in transform layer.In view of the cost and photoelectric characteristic of rare earth metal, above-mentioned idea and method gives
More practical and economical selection.
In another change case of the present utility model, it is seen that it is hydrogenated amorphous that photoelectric conversion layer includes trace doped p-type
Silicon layer (label 63 in such as Figure 12), photoelectric conversion layer (label 64 in such as Figure 12), trace doped N-type hydrogenated amorphous silicon layer are (such as
Label 65 in Figure 12).Photoelectric conversion layer 64 is located at trace doped N-type hydrogenated amorphous silicon layer 65 and the hydrogenation of trace doped p-type
Between 63 layers of amorphous silicon layer.In the pixel electrode (label 61 in such as Figure 12) of second transparency electrode layer and trace doped p-type hydrogen
Without using other barrier layers between change amorphous silicon layer 63, the transparent conductive material of higher work-functions is used to form second transparency electrode
The pixel electrode 61 of layer, itself and trace doped p-type hydrogenated amorphous silicon layer 63 is set to form higher electron injection barrier (Schottky
Potential barrier), stop effect of the electronics from electrode injection so as to play.It is saturating in trace doped N-type hydrogenated amorphous silicon layer 65 and first
One layer of hole blocking layer (label 66 in such as Figure 12) is made between prescribed electrode layer (label 67 in such as Figure 12).The hole blocking layer 66
Can be the oxide skin(coating) (such as cerium oxide (CeO2)) of rare earth metal, its thickness is between 5nm to 50nm.The hole blocking layer
66 can be the a-SiH films or a-SiC films of n+ doping of the thickness substantially between 20nm to 100nm, or thickness
Undoped a-SiN films or a-SiO substantially between 5nm to 50nm2Film.Hole blocking layer 66 can also be one layer
Include In, Ga, Zn oxide, its thickness is between 20nm to 100nm.Such as the above-mentioned Schottky barrier in negative electrode side
Situation, when electrode material or transparent conductive oxide film and semiconductor contact, Schottky barrier can be formed.According to its work(
The work function difference of function and semiconductor, the rectified action of unidirectional electron flowing can be made it have, so as to prevent outside
Electronics or the injection in hole.
Further, in the structure shown in Figure 12, first transparency electrode layer 67 relative to second transparency electrode layer picture
Preferably there is relatively low work function for plain electrode 61.Different work functions can be by selecting different material or of the same race
Material but different chemical constituent percentage, or the percentage containing oxygen molecule is such as adjusted by different manufacture crafts
To reach.The pixel electrode 61 of first transparency electrode layer 67 and second transparency electrode layer can for example use transparent conductive oxide
Thing, and by adjusting its oxygen molecule percentage contained, adjust the work function on its surface so that the picture of second transparency electrode layer
The interface of plain electrode 61 and amorphous silicon hydride forms the potential barrier that can stop electron injection, and first transparency electrode layer 67 and hydrogenation are non-
The interface of crystal silicon forms the potential barrier that can stop hole injection.
Found by research, the average work function of various transparent conductive oxide materials has certain difference.Specifically,
Work function magnitude relationships of some conventional transparent conductive oxide materials are：ITO≤In2O3≤ZnO2≤Zn4Sn3O12≤
Zn2Sn2O5≤AGZO≤MgIn2O4≤GaInO3≤ZnSnO3.Here the material listed does not include all electrically conducting transparent oxygen
The species of compound, but its binary transparent conductive oxide, ternary transparent conductive oxide, or quaternary transparent conductive oxide,
Or its mutual synthetic, it can be sorted according to the size of its work function.The utility model can be according to this sequence
Select the larger transparent conductive oxide of work function to be used as the implant blocking layer of electronics, select the less electrically conducting transparent oxygen of work function
Compound is used as the implant blocking layer in hole.For from the circuit structure of light-to-current inversion film, that is, larger saturating of work function
Bright conductive oxide is applied in upper negative voltage as negative electrode, and the less transparent conductive oxide of work function is applied in just as anode
Voltage.Further, the difference of the film-forming process of transparent conductive oxide and post annealed technique, its surface work function may also
There is different.By technique adjustment, it may be made as the larger ITO of work function and be used as negative electrode, the less ITO of work function is made and uses
Make anode.
Further, as shown in Fig. 2 continuous continual visible photoelectric conversion layer is superimposed upon CMOS IC chips
On, the visible photoelectric conversion layer absorbs incident visible ray 241 and converts thereof into electronics or hole.Light induced electron or hole exist
Under the driving of electric field in the visible photoelectric conversion layer, positive electrode or negative electrode are moved respectively to.It can be seen that photoelectric conversion layer is outer
Portion's voltage is by first transparency electrode layer 229 positioned at top and the pixel electrode 224 of the second transparency electrode layer positioned at centre
Voltage difference is determined.The pixel electrode 224 of second transparency electrode layer is connected to the source electrode of switching transistor 218, once the crystal
The grid of pipe 218 is coupled with high voltage and opened, and the photogenerated charge of storage is just output to external circuit and gone.Incident near infrared light
242 through reaching infrared electro transform layer 211 after the film such as colored filter 232, visible photoelectric conversion layer, and is photoelectrically converted
Into electronics or hole and it is stored in each sub-pixel.When cut-in voltage is applied on the grid of switching transistor 219, crystal
Pipe 219 is opened, and the photogenerated charge of the near infrared light of storage is just output to external circuit.The CMOS image pick-up devices of silicon shown in Fig. 2
Part can be an above-mentioned simple photodiode PD and switching transistor dot structure or more complicated
CMOS APS (ACTIVE PIXEL SENSOR) image element circuit structure.
The preparation method that multispectral camera device provided by the utility model is described with reference to Fig. 3 to Figure 10.Fig. 3 is extremely
Figure 10 shows the manufacturing process of the multispectral camera device of the utility model embodiment.
Referring first to Fig. 3, provide silicon substrate 210 first, and formed on silicon substrate 210 infrared electro transform layer 211 and
Switching transistor 218,219.In order to deepen depth of second photoelectric conversion layer near infrared absorption, the silicon substrate 210 also may be used
To be the composite base plate for the silicon for growing one layer of weak p-type or weak N-type by epitaxy method on the silicon substrate of weight p-type or n-type doping.
Thereafter connected referring to Fig. 4, depositing and patterning interlayer transparent conductive film 221, the interlayer transparent conductive film 221
To internal or external control voltage.
Afterwards referring to Fig. 5, dielectric film 222 (such as SiO2 or SiN) is deposited by switching transistor 218,219 and interlayer
Transparent conductive film 221 protects.
Referring then to Fig. 6 to Fig. 8, first in formation second transparency electrode layer on dielectric film 222.During in order to ensure grinding
Technique amount of redundancy, the second transparency electrode layer highly preferable, more than 50nm.For the ease of etching and grinding, second is saturating
The structure of prescribed electrode layer is preferably noncrystalline state, and its hardness is relatively low, and etching precision is also easily controlled.Make second transparency electrode
Layer passes through upper and lower via and connects the switching transistor 218 of bottom and etch as pixel electrode array (including multiple pixel electrodes
224).In a specific embodiment, using linear coating machine or rotary coating machine in being coated with pixel electrode array
Organic film containing solvent, the thick organic film for exceeding pixel electrode thickness of a tunic is then made by the technique of drying.So
Use CMP afterwards, grind pixel electrode array and organic film (organic film is as the first dielectric film 225) surface, to form the
One continuous surface.Specifically, pixel electrode is ground to using CMP exposed and be less than 5nm with the segment difference of the first continuous surface
Degree.Pixel electrode array and organic film surface are cleaned, is finally putting into the container of certain temperature and toasts annealing.The one of annealing
Individual purpose be by the pixel electrode thin film crystallization of amorphous, and eliminate CMP to film surface and in vivo caused by stress and
Damage.According to the pixel electrode thin-film material and the material property of the dielectric film of cover it used, annealing temperature should be higher than that
200 are less than 1000 degrees centigrade Celsius.Specifically, in the present embodiment, it is high from the bottom surface of second transparency electrode layer before grinding
It is h that degree, which counts the height (=thickness) of second transparency electrode layer, similarly counts the from the floor height of second transparency electrode layer
The maximum height (needing not be equal to its maximum gauge) of one dielectric film is that (maximum height of the first dielectric film is located at adjacent second to H
Between transparency electrode), the first dielectric film on all second transparency electrode layers is removed by grinding, and grind off the of at least 2%
Even if the thickness of two transparent electrode layers can still allow all so as to the vertical deviation for ensureing in the presence of certain silicon wafer surface
The pixel electrode of two transparent electrode layers exposes.In order to ensure the surface flatness after grinding, it is preferable that ensure H before the milling>
1.02h。
In another specific embodiment, Fig. 9 is referred to, uses the vapour deposition process of plasma enhanced chemical
Thin-film deposition methods such as (Plasma Enhanced Chemical Vapor Deposition, PECVD), in the second transparent electricity
One layer of inoranic membrane, such as SiO are deposited on the layer of pole2Or SiN so that its height counted since second transparency electrode layer bottom
More than the 102% of second transparency electrode thickness degree.Then CMP is used, surface segment difference is made and is less than the first continuous tables of 5nm
Face.
Alternatively specific embodiment, above-mentioned inorganic thin film can be allowed to be superimposed upon what is formed on above-mentioned organic film
Insulation film is used for the first dielectric film, and the organic film that so can have both had lower floor to be coated with effectively fills electrode gap and corner
Effect, have preferable interface between upper strata inorganic thin film and the first photoelectric conversion layer or the second hole/electronic barrier layer special again
Property (electricity, the characteristic of chemical interfacial characteristics and surface adhesion force).In the embodiment of this insulation film, from
The maximum height for the insulation film that the bottom surface of two transparent electrode layers is counted is more than the 102% of the thickness of second transparency electrode layer,
Being coated on the maximum height that the organic film of lower floor is counted from the bottom surface of second transparency electrode after the drying, should to be less than second transparent
The 98% of electrode layers thickness, to expose substantially second transparency electrode and inoranic membrane in the first continuous surface after grinding
Layer, the area of the organic film exposed are less than the 5% of the compound inslation film layer gross area.
Afterwards, referring to Figure 10 and Fig. 2, the visible photoelectric conversion layer of continuous film forming and the first transparency conducting layer 229.First is transparent
Conductive layer 229 is connected to the control voltage end of outside.Then, film forming passivation protection film 230, RGB color optical filter 232 and black square
Battle array 231.Passivation protection film 230 plays protection to the first transparency conducting layer 229 of water vapor sensitive and the work of visible photoelectric conversion layer
With.
Thus, it will be seen that photoelectric conversion layer (226~228) is deposited on segment difference less than 5nm no better than the first of minute surface
After on continuous surface, the intensity of the fringe field at electrode edge and turning is just significantly reduced, so as to reduce amorphous silicon hydride
The local electric leakage stream of film 227.This local electric leakage circulation is normally due to caused by two factors：Caused by the point effect of electrode
High local fields；Relatively flat area, the thickness for covering the film at electrode edge or segment difference edge are smaller.In the utility model
In, segment difference reduction or substantially no segment difference is avoided local electric leakage stream.
Another two embodiment provided by the utility model is described respectively in connection with Figure 11 and Figure 12.Referring first to Figure 11, upper
On the first continuous surface for stating grinding technics formation, the electronics or hole blocking layer of a slice width forbidden band are deposited, it not only can be to prevent
The only injection in electronics or hole, it is also prevented from the lateral flow of electric charge.Specifically, by the way of pecvd process
A-SiC films, undoped the a-SiN films or a- of one layer of p+ doping are deposited on the pixel electrode 51 of two transparent electrode layers
Any film in SiO2 films, NiO (nickel oxide) film as the second electronic barrier layer 52, second electronic barrier layer 52
Thickness is substantially in 10nm to 50nm.Then on the second electronic barrier layer 52 using the mode film forming such as PECVD it is undoped or
The a-SiH films of minimum trace P type doping should be less than 5x10 as photoelectric conversion layer 54, the doping concentration-5.In order to reduce
The high electric field of surface area contact and the injection dark current thus triggered, the second electronic barrier layer 52 and photoelectric conversion layer 54 it
Between, micro B is imported in PECVD reative cells2H6Gas, photoelectric conversion layer 54 is done close to the region of the second electronic barrier layer 52
The p-type doping of doping concentration that is micro but being above region 54, to form trace doped p-type hydrogenated amorphous silicon layer 53.
The space charge for the negative electrical charge that the partial holes in 53 regions are formed after exhausting can suitably relax the resistance of the second electronics under the driving of electric field
Highfield near barrier, so as to reduce the efficiency of electron injection, so this region 53 is alternatively referred to as the second electric field buffering area.
Between the hole blocking layer 56 of light-to-current inversion film layer 54 and first, micro PH is imported in PECVD reative cells3, to film layer 55
Micro n-type doping is done, to form trace doped N-type hydrogenated amorphous silicon layer.The part electricity in region 55 under the driving of electric field
The space charge for the positive charge that son is formed after exhausting can suitably relax the highfield near the first hole blocking layer, so as to reduce sky
The efficiency of cave injection, this region 55 are alternatively referred to as the first electric field buffering area.Above the first electric field buffering area 55, the
The first hole blocking layer 56 made below one transparent electrode layer 57.First hole blocking layer 56 can be the oxygen of rare earth metal
Compound layer, such as cerium oxide (CeO2), its thickness is between 5nm to 60nm；The either a-SiC films or non-of one layer of n+ doping
The a-SiN films or a-SiO of doping2Film, its thickness is substantially between 5nm to 50nm；Either one layer includes In,
Ga, Zn oxide, its thickness is between 20nm to 100nm；The either a-SiH films of n+ types doping, its thickness is in 20nm
To between 100nm.The band structure of the light-to-current inversion film so formed is as shown in figure 11.According to using needs, above-mentioned film forming
Order can also in turn, and its certain driving voltage is also just on the contrary, the incident direction of light is also opposite.
Similar with Figure 11 structure referring then to Figure 12, layer 63 and layer 65 are respectively trace doped p-type amorphous silicon hydride
Layer and trace doped N-type hydrogenated amorphous silicon layer.Unlike structure 11, in the He of pixel electrode 61 of second transparency electrode layer
Without using other barrier layers between trace doped p-type hydrogenated amorphous silicon layer 63.The pixel electrode 61 of second transparency electrode layer is
Transparent conductive oxide (the TCO of high work function：Transparent conductive oxide), second transparency electrode layer
So as to forming higher electron injection barrier (Schottky between pixel electrode 61 and trace doped p-type hydrogenated amorphous silicon layer 63
Potential barrier), play and stop effect (EB, Electron Blocking) of the electronics from electrode injection.Hydrogenated in trace doped N-type
Between amorphous silicon layer 65 and first transparency electrode 67 make one layer injection hole barrier layer 66 with carry out hole barrier (HB,
Hole Blocking), the composition is similar with above-mentioned relevant explanation with thickness such as Figure 11.
Further, in order to improve the height that electronics crosses Schottky barrier, in such as Figure 12 electronic potential figure, it is necessary to
The work function of second transparency electrode is more than the work function of first transparency electrode.Different materials can be used for this to obtain different work contents
Several electrodes.Or same TCO materials are used, but the difference of its film-forming process and post annealed technique, so as to its surface
Work function has different.This has just given manufacturing process the larger free degree and cost space.As shown in figure 13, there is disclosed splash
Penetrate oxygen content in 80nmITO films (OC, Oxygen Content) and most important three photoelectric properties (P, properties)：
The correlation of transmitance (T, Transmission), resistivity (R, Resistivity) and work function (WF, Work Function)
Relation.ITO oxygen content can by the partial pressure and radio-frequency voltage of the oxygen imported in the reative cell of magnetron sputtering film forming with
And the parameter such as automatic bias of target adjusts, either pass through the annealing process condition after film forming or after CMP, such as oxygen
Compression ring border and temperature are finely tuned.By technique adjustment, the larger ITO of work function is made and is used as negative electrode, it is less that work function is made
ITO is used as anode.Similarly, such making technology control can also be used for other TCO materials.
In view of this, the utility model will include electronics and hole implant blocking layer, electric field cushion and photoelectric conversion layer
Plural layers be deposited on the first continuous surface no better than minute surface of the segment difference less than 5nm after, each pixel of separation is electric
The intensity of the edge of pole and the fringe field at turning is just significantly reduced, so as to reduce visible photoelectric conversion layer in pixel electrode
The local electric leakage stream of edge.In addition, the utility model is also by electrons barrier layer in visible photoelectric conversion layer and close
The setting of electric field buffering area near electrons barrier layer, the dark current from anode/cathode injection is reduced, is improved
The uniformity and signal to noise ratio of signal.Due to the high-ohmic of electronics of the film forming on the first continuous surface or hole blocking layer,
Horizontal Leakage Current between adjacent pixel electrodes is suppressed, so as to which light-to-current inversion film need not be according to the big of each pixel electrode
It is small split it is islanding.Device architecture and manufacturing process are not only simplify, and improves effective utilization of light-to-current inversion film
Rate, eliminate it is islanding after abutment wall leakage current, colour mixture caused by essentially eliminating large angle incidence light and photoelectricity crosstalk,
The problem of eliminating to prevent colour mixture and crosstalk and low light utilization caused by the excessive photomask of use.Pass through above-mentioned side
Formula, the multispectral camera device for realizing high image resolution and high sensitivity and depositing.
Basic conception of the present utility model and specific some embodiments are described above.Need exist for statement
It is that the utility model is not limited to above-mentioned particular implementation, those skilled in the art can be within the scope of the claims
Various modifications or combination are made, this has no effect on substantive content of the present utility model.The utility model is also not limited to this practicality
In new apply and monitor round the clock for the ease of illustrating medical image described by basic conception, certainly also including other field
Using such as industrial products and environment measuring, personal identification judges, the game and commercial activity of Virtual Space and augmented reality
Deng.
Claims (17)
1. a kind of multispectral camera device, it is characterised in that include successively along the direction of incident ray：
Color filter layers, include the array of colored filter, for the light optionally through special spectrum scope；
First transparency electrode layer, through visible ray and near infrared light；
First photoelectric conversion layer, for photoelectrically changing visible ray as electric signal；
First continuous surface, first continuous surface are formed by second transparency electrode layer and the first dielectric film, and described second
Transparent electrode layer includes multiple pixel electrodes, and the multiple pixel electrode forms pixel electrode array, the second transparency electrode
Layer is collected the electric signal of visible ray and passed through near infrared light, and first dielectric film is described between the pixel electrode
First photoelectric conversion layer is between the first transparency electrode layer and first continuous surface and uninterruptedly covers
On first continuous surface；
The array of second photoelectric conversion layer, for photoelectrically changing near infrared light as electric signal；And
Circuit devcie, the electric signal that layer and the second photoelectric conversion layer are changed from first photoelectricity is handled respectively.
2. multispectral camera device as claimed in claim 1, it is characterised in that the pixel electrode array and second light
Also include interlayer transparency conducting layer between electric transform layer to do electrostatic isolation to the first photoelectric conversion layer and the second photoelectric conversion layer,
The near infrared light transmitance of the interlayer transparency conducting layer is more than 60%.
3. multispectral camera device as claimed in claim 2, it is characterised in that the projection covering of the interlayer transparency conducting layer
More than the 80% of pixel electrode area and more than the 80% of the second photoelectric conversion layer area.
4. multispectral camera device as claimed in claim 1, it is characterised in that the direction incident along light, described first
Photoelectric conversion layer includes successively：
First electronic barrier layer；
First electric field cushion, formed by trace doped p-type hydrogenated amorphous silicon layer；
Photoelectric conversion layer, the hydrogenated amorphous silicon layer adulterated by trace P type are formed；
Second electric field cushion, formed by trace doped N-type hydrogenated amorphous silicon layer；And
Second hole blocking layer.
5. multispectral camera device as claimed in claim 4, it is characterised in that the first electronic barrier layer includes the doping of p+ types
A-SiH either a-SiC films, NiO films or Sb2S3Film, the first electronic barrier layer thickness be 20nm to 100nm it
Between.
6. multispectral camera device as claimed in claim 4, it is characterised in that the second hole blocking layer includes the doping of n+ types
A-SiH or a-SiC films, the second hole blocking layer thickness is between 20nm to 100nm.
7. multispectral camera device as claimed in claim 4, it is characterised in that the second hole blocking layer includes undoped a-
SiN films or a-SiO2Film, the thickness of second hole blocking layer is between 5nm to 50nm.
8. multispectral camera device as claimed in claim 4, it is characterised in that the second hole blocking layer includes rare earth metal
Oxide skin(coating), the thickness of second hole blocking layer is between 5nm to 50nm.
9. multispectral camera device as claimed in claim 4, it is characterised in that the second hole blocking layer includes containing In, Ga
Or the oxide of Zn metals, the thickness of second hole blocking layer is between 20nm to 200nm.
10. multispectral camera device as claimed in claim 1, it is characterised in that the direction incident along light, described first
Photoelectric conversion layer includes successively：
First hole blocking layer；
First electric field cushion, formed by trace doped N-type hydrogenated amorphous silicon layer；
Photoelectric conversion layer, the hydrogenated amorphous silicon layer adulterated by trace P type are formed；
Second electric field cushion, formed by trace doped p-type hydrogenated amorphous silicon layer；And
Second electronic barrier layer.
11. multispectral camera device as claimed in claim 10, it is characterised in that the second electronic barrier layer adulterates including p+ types
A-SiH either a-SiC films, NiO films or Sb2S3Film, the second electronic barrier layer thickness is 20nm to 100nm
Between.
12. multispectral camera device as claimed in claim 10, it is characterised in that the first hole blocking layer adulterates including n+ types
A-SiH or a-SiC films, the first hole blocking layer thickness is between 20nm to 100nm.
13. multispectral camera device as claimed in claim 10, it is characterised in that the first hole blocking layer includes undoped
A-SiN films or a-SiO2Film, the thickness of first hole blocking layer is between 5nm to 50nm.
14. multispectral camera device as claimed in claim 10, it is characterised in that the first hole blocking layer includes rare earth metal
Oxide skin(coating), the thickness of first hole blocking layer is between 5nm to 50nm.
15. multispectral camera device as claimed in claim 10, it is characterised in that the first hole blocking layer include containing In,
The oxide of Ga or Zn metals, the thickness of first hole blocking layer is between 20nm to 200nm.
16. described multispectral camera device as claimed in claim 1, it is characterised in that the first photoelectric conversion layer both sides
First transparency electrode layer and second transparency electrode layer, one of them as the negative electrode being applied in compared with low potential, wherein it is another as
The anode of high potential is applied in, the work function of the negative electrode is more than the work function of the anode.
17. multispectral camera device as claimed in claim 1, it is characterised in that on first continuous surface, adjacent pixel
Electrode is smaller than 10um, and is more than or equal to 0.5um.
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| CN107403816A (en) * | 2017-08-18 | 2017-11-28 | 展谱光电科技（上海）有限公司 | Multispectral camera device and preparation method thereof |
| CN107403816B (en) * | 2017-08-18 | 2023-10-31 | 展谱光电科技（上海）有限公司 | Multispectral image pickup device and manufacturing method thereof |
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