CN206921822U - Multispectral camera device and multispectral camera system - Google Patents
Multispectral camera device and multispectral camera system Download PDFInfo
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- CN206921822U CN206921822U CN201720681735.4U CN201720681735U CN206921822U CN 206921822 U CN206921822 U CN 206921822U CN 201720681735 U CN201720681735 U CN 201720681735U CN 206921822 U CN206921822 U CN 206921822U
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Abstract
The utility model provides a kind of multispectral camera device and multispectral camera system.The multispectral camera device is used for the image for obtaining different-waveband, and the multispectral camera device includes：Substrate；Multiple semiconductor layers, it is stacked in perpendicular to plane earth where substrate on the substrate, the semiconductor layer of different layers photoelectrically changes visible ray and near infrared light respectively；And filter layer, positioned at the multiple semiconductor layer backwards to the side of the substrate, including the multiple filtered regions being arranged in a matrix, so that the light of the multispectral camera device is incided by wave band separation in the plane parallel to substrate.Multispectral camera device provided by the utility model and system separate the light for inciding multispectral camera device by vertical substrate direction and then the image that can obtain different-waveband simultaneously so that multispectral camera system carries out the image procossing of such as plus and minus calculation with parallel orientation substrate.
Description
Technical field
It the utility model is related to medical auxiliary equipment field, more particularly to a kind of multispectral camera device and multispectral take the photograph
As system.
Background technology
The structure and tissue of inside of human body are that human eye cannot be directly viewed.Rely solely on the exterior contour and human body of human body
Anatomical knowledge is difficult to accurately find and positions subcutaneous internal structure and organize.
Human vas is hidden in below the epidermis, is often blocked by subcutaneous fat, or even bone, in the environment of visible ray
Picture signal and its faint, in addition it is completely not visible for human eye.Although before puncture, doctor often may require that patient clenches fist
Head makes blood vessel more visible with the mode for patting site of puncture skin, but according to the age of patient, the thickness of subcutaneous fat
Etc. factor, the visuality of veins beneath the skin is still undesirable.According to the blood-vessel image and medical knowledge to may be seen indistinctly, blood vessel is done
Puncture often misplace, cause the pain of patient, delay treatment opportunity, or even cause injection accident.Except directly to blood vessel
Beyond the blood drawing and injection done, acupuncture and other medical operatings etc. operate, and are required for knowing exactly the position of blood vessel, so as to
Blood vessel can be avoided in operation or special processing is done to blood vessel.
The technical method for attempting to solve this problem at present is to use near-infrared camera technique.This infrared blood-vessel image increases
Strong technology mainly make use of in blood vessel the absorptivity of near infrared light of the hemoglobin to wavelength from 760nm to 1000nm and surrounding its
The different principle of his tissue, will absorb the near-infrared image of blood vessel first, then the contrast of image be done after strengthening, be led to
A visible light projector is crossed by veins beneath the skin Projection Display in skin surface.So doctor or nurse can just identify patient's skin
The position of lower blood vessel and real-time operation.
Surrounded yet with veins beneath the skin by subcutaneous fat and musculature, they have obvious dissipate near infrared light
The effect of penetrating.The pigment and fat of the hypodermis of human body, the fold of skin surface, scar and hair all can be to the infrared rays of incidence
There are absorption and scattering process.They have seriously obscured the blood-vessel image that this projection angiograph obtains.It is this technical
Birth defect showed when being imaged the less fine vascular of diameter it is especially serious.Because blood vessel is more tiny, unit length
The endovascular blood volume of degree is fewer, and contained aerobic hemoglobin and the quantity of anaerobic hemoglobin are fewer, from
And their absorptions near infrared light are fewer.Under equal veiling glare background, the contrast of blood vessel and surrounding tissue is just
It is very faint, generally 0.01~0.1.
According to the optical characteristics of human body sub-dermal soft tissue, the light of different wave length human body skin lower floor absorption depth not
Together, wavelength is longer, and the depth that can be penetrated is bigger.From the 420nm of bluish violet to the most sensitive 550nm of human eye visible ray
It is merely capable of penetrating 0.6mm epidermis, and the feux rouges that wavelength is more than 690nm or so can penetrate epidermis and skin corium arrival
Hypodermis upper strata and the depth of section of vein.Wavelength is sightless for human eye more than 760nm to 1000nm light near red
UV light, it can reach more profound hypodermis and fat deposit.
All light all can be scattered and reflected in the starting stage for entering skin, its scatter and the light of reflection for
Only need to know for the blood-vessel image of lower layers of skin to be only to do harmful interference or noise.If subtracted from infrared image
Visible images, it is possible to only carried the image of subcutaneous deep location information.Here it is the numeral of infrared image to subtract
The general principle of shadow technology.Why need to carry out this operation in the environment of digital picture, be because at the image of complexity
Reason can not use analog signal and analog circuit to complete, it is necessary to be completed after digitlization with computer.
How efficiently and accurately to obtain the image of different-waveband is urgent problem to be solved.
Utility model content
For in the prior art the defects of, the purpose of this utility model is to provide multispectral camera device and multispectral
Camera system, overcome difficulty of the prior art, can efficiently and accurately obtain the image of different-waveband.
According to one side of the present utility model, there is provided a kind of multispectral camera device, the multispectral camera device are used
In the image for obtaining different-waveband, the multispectral camera device includes：Substrate；Multiple semiconductor layers, where substrate
Plane earth is stacked on the substrate, and the semiconductor layer of different layers photoelectrically changes visible ray and near infrared light respectively；And
Filter layer, positioned at the multiple semiconductor layer backwards to the side of the substrate, including the multiple filtered regions being arranged in a matrix, with
The light of the multispectral camera device is incided by wave band separation in the plane parallel to substrate.
Alternatively, the multiple semiconductor layer includes：First semiconductor layer, can be N-type half on the substrate
The carrier depletion layer of conductor or P-type semiconductor, its effect is opto-electronic conversion near infrared light, that is, the near-infrared by incidence
Light is converted into signal charge；Second semiconductor layer, positioned at first semiconductor layer backwards to the side of the substrate, opto-electronic conversion
Visible ray, and passed through near infrared light；The filter layer is located at second semiconductor layer backwards to first semiconductor layer
Side, the filter layer include multiple optical filters by array arrangement, and each optical filter forms a filtered region, for corresponding
The visible ray and near infrared light of a kind of wave band pass through.
Alternatively, the pattern of second semiconductor layer the substrate upright projection in the plane institute is completely covered
State the pattern of the first semiconductor layer the substrate upright projection in the plane.
Alternatively, the pattern of second semiconductor layer the substrate perpendicular projection in the plane cover institute
State the pattern of the first semiconductor layer the substrate upright projection in the plane, and use black matrix film BM
(blackmatrix) and lighttight metal block the first semiconductor layer still not by the second semiconductor layer is overlapping or blocks
Subregion.
Alternatively, partial pattern is connected to electrical components in second semiconductor layer, another in second semiconductor layer
A part of pattern is electrically hanging.
Alternatively, the pattern of first semiconductor layer in the substrate upright projection in the plane and be connected to electricity
The partial pattern of second semiconductor layer of property element the substrate upright projection in the plane it is not overlapping.
Alternatively, each filtered region the substrate upright projection in the plane be completely covered described the second half
The pattern of conductor layer the substrate upright projection in the plane.
Alternatively, the filter layer also includes：Transparent film layer, multiple filtered regions are formed, for visible ray and near infrared light
Pass through.
Alternatively, between the transparent film layer is covered between the filtered region of its multiple all band and the filtered region
Gap, so as to the top planarization of the multispectral camera device and and be passed through for visible ray and near-infrared.
Alternatively, in addition to：Gate line that is a plurality of to arrange in the first direction, and extending in a second direction, positioned at the base
Plate sets the side of the multiple semiconductor layer；Data wire that is a plurality of to arrange in a second direction, and extending in a first direction, is located at
The substrate sets the side of the multiple semiconductor layer, wherein, the first direction is perpendicular to the second direction.
Alternatively, the pattern of each first semiconductor layer is electrically connected to the control pole of a switch element, and is opened by this
Two poles for closing element are respectively electrically connected to the gate line and the data wire；The figure of at least partly described second semiconductor layer
Case is electrically connected to the control pole of a switch element, and by two poles of the switch element be respectively electrically connected to the gate line and
The data wire.
Alternatively, in addition to：Insulating passivation layer, between first semiconductor layer and second semiconductor layer.
Alternatively, the pattern of second semiconductor layer includes multiple second sub-patterns being arranged in a matrix, and one is connected to
Second sub-pattern of electrical components forms an optical photon pixel, and each filtered region covering at least one is described visible
Sub-pixels；The pattern of first semiconductor layer includes multiple first sub-patterns being arranged in a matrix, first subgraph
Case forms a near infrared light sub-pixel；The optical photon pixel of at least two different-wavebands and at least one near-infrared
Sub-pixels form a pixel cell, so that the multispectral camera device obtains the visible images of at least two different-wavebands
And at least one near infrared light image.
Alternatively, each pixel cell include three different-wavebands the optical photon pixel and one it is described near red
Outer sub-pixels, so that the multispectral camera device obtains the visible images and a near infrared light figure of three different-wavebands
Picture.
Alternatively, each pixel cell includes the optical photon pixel and two different-wavebands of two different-wavebands
The near infrared light sub-pixel so that the multispectral camera device obtain two different-wavebands visible images and two
The near infrared light image of different-waveband.
Alternatively, two near infrared light sub-pixels stop wavelength by a transparent film layer and one respectively in each pixel cell
The optical filter covering of near infrared light more than 900nm.
Alternatively, the first semiconductor layer corresponding to two near infrared light sub-pixels difference has not in each pixel cell
Same thickness is with the near infrared light of opto-electronic conversion different wave length.
Alternatively, the thickness of the first semiconductor layer corresponding to a near infrared light sub-pixel is micro- for 0.5 in each pixel cell
Rice is to 3 microns；The thickness of first semiconductor layer corresponding to another near infrared light sub-pixel is then more than first near infrared light
The thickness of first semiconductor layer of sub-pixel, it is 1 micron to 15 microns.
Alternatively, the optical photon pixel includes two or more in following sub-pixel：Red sub-pixel (RED)；
Blue subpixels (BLUE)；Green sub-pixels (GREEN)；Yellow sub-pixel (YELLOW)；Pinkish red sub-pixels (MAGENTA)；
Bluish-green sub-pixels (CYAN) and white sub-pixels, white pixel referred herein mean the filter on its photoelectric conversion layer
Mating plate is the film layer for the transparent state for not having color filtering to act on to visible ray.
Alternatively, the substrate is crystalline silicon substrate.
According to another aspect of the present utility model, a kind of multispectral camera system is also provided, including：Light more as described above
Camera device is composed, for the light for inciding the multispectral camera device to be converted into the telecommunications for the image for representing different-waveband
Number；And processor, communicated with the multispectral camera device, the different-waveband obtained to the multispectral camera device
The electric signal of image is handled.
Alternatively, the electric signal of the image for the different-waveband that the processor obtains to the multispectral camera device is carried out
Addition and subtraction processing with weight.
In view of this, multispectral camera device of the present utility model and multispectral camera system are filled by multispectral shooting
The structure put by the light for inciding multispectral camera device along vertical substrate direction and parallel orientation substrate be separated into it is multiple not
With the light of wave band to obtain the image of different-waveband simultaneously.The image of the different-waveband obtained simultaneously is in multispectral camera system
Subsequent treatment in be not in position skew equal error, reduce for this kind of error image procossing, improve different-waveband
Image processing speed.
Brief description of the drawings
By reading the detailed description made with reference to the following drawings to non-limiting example, other spies of the present utility model
Sign, objects and advantages will become more apparent upon：
Fig. 1 is a kind of sectional view of multispectral camera device of the utility model first embodiment；
Fig. 2 is the schematic diagram of the light transmission rate of the different optical filters of the utility model embodiment；
Fig. 3 is the schematic diagram of the multispectral camera device of the utility model second embodiment；
Fig. 4 is the schematic diagram of the multispectral camera device of the utility model 3rd embodiment；
Fig. 5 is the schematic diagram of the multispectral camera device of the utility model fourth embodiment；
Fig. 6 is the schematic diagram of the multispectral camera device of the embodiment of the utility model the 5th；
Fig. 7 is the schematic diagram of the multispectral camera device of the utility model sixth embodiment；
Fig. 8 is the A-A ' sectional views in Fig. 7；
Fig. 9 is the schematic diagram of the multispectral camera system of the utility model embodiment.
Embodiment
Example embodiment is described more fully with referring now to accompanying drawing.However, example embodiment can be with a variety of shapes
Formula is implemented, and is not understood as limited to embodiment set forth herein；On the contrary, these embodiments are provided so that this practicality is new
The design of example embodiment fully and completely, and will be comprehensively communicated to those skilled in the art by type.It is identical in figure
Reference represent same or similar structure, thus repetition thereof will be omitted.
Described feature, structure or characteristic can be incorporated in one or more embodiments in any suitable manner
In.In the following description, there is provided many details fully understand so as to provide to embodiment of the present utility model.So
And one of ordinary skill in the art would recognize that, without one or more in specific detail, or using other methods, constituent element,
Material etc., the technical solution of the utility model can also be put into practice.In some cases, be not shown in detail or describe known features,
Material is operated to avoid fuzzy the utility model.
In order to solve the defects of prior art, the utility model provides a kind of light more for being used to obtain the image of different-waveband
Compose camera device.Multispectral camera device includes substrate, multiple semiconductor layers and filter layer.Multiple semiconductor layers are perpendicular to base
Plane earth where plate is stacked on the substrate, and the semiconductor layer of different layers photoelectrically changes visible ray and near-infrared respectively
Light.Filter layer is located at multiple semiconductor layers backwards to the side of substrate.Filter layer includes the multiple filtered regions being arranged in a matrix, with
The light of the multispectral camera device is incided by wave band separation in the plane parallel to substrate.
Specifically, the utility model is according to the absorption depth of light in some semi-conducting materials and the correlation of wavelength,
By the image information of different spectral band passages along doing longitudinal separation on the direction of substrate, at the same parallel to
Do the separation of multispectral channel in the two-dimensional plane space of substrate, that is to say, that while or do the channel point of three dimensions in real time
From.When multispectral camera device provided by the utility model applies to the image (example of different depth in medical field acquisition human body
Such as blood-vessel image) when, because light is in the subcutaneous absorption of human body, reflection and scattering process along the continuity in penetration direction,
The different-waveband image of opto-electronic conversion has certain overlapping on orientation substrate, by three dimensions to incident ray
The channel separation of multispectral (light of different-waveband) is done, more multiwave image is obtained, by the different-waveband absorbed
Image information does certain computing and processing, draws the subcutaneous different depth of human body, or the high-contrast image of different tissues.
With reference to each brief description of the drawings each embodiment provided by the utility model.
Referring first to Fig. 1, Fig. 1 shows a kind of sectional view of multispectral camera device of the utility model first embodiment.
Multispectral camera device includes substrate 190, the first semiconductor layer 140, the second semiconductor layer and filter layer.
Substrate 190 is crystalline silicon substrate.First semiconductor layer 140 is located on substrate 190, sensitive near infrared light.The
Semi-conductor layer 140 can be CMOS (the Complementary Metal Oxide made on substrate 190
Semiconductor, complementary metal oxide semiconductor) picture pick-up device photodiode either N-type semiconductor or p-type
The carrier depletion layer of semiconductor, or the electricity of CCD (Charge-coupled Device, charge coupled cell) picture pick-up device
Son or hole potential well.Near infrared light has carried out opto-electronic conversion at the first semiconductor layer 140.Alternatively, it is described herein near
The wavelength of infrared light is 760nm-1000nm.
Second semiconductor layer (including 121,122 and 123) is located at the first semiconductor layer 140 backwards to the side of substrate 190, right
Visible ray is sensitive, and is passed through near infrared light.Specifically, it is seen that light has carried out opto-electronic conversion in the second dielectric layer.Can
Selection of land, the wavelength of visible ray described herein is 400nm-760nm.Second semiconductor layer can include multiple visible ray photoelectricity and turn
Parallel operation part.In a preferred embodiment, can use amorphous silicon hydride photodiode as the second semiconductor layer can
See light electrooptical device.The response curve of the visible spectrum of the photodiode of amorphous silicon hydride and the vision of human eye
Response curve is relatively coincide, and the visible image of intake is with seldom or hardly with the correction for doing color again.With it is hydrogenated amorphous
The technological temperature of hydrogen content to film-forming process and afterwards in silicon is related, and the energy gap of the film of amorphous silicon hydride is from substantially
From 1.6eV to 2.0eV, the absorption coefficient in visible-range of the wavelength equal to 400nm to 760nm is very big, and one about 2 micro-
The thick hydrogenation non crystal silicon film of rice can absorb nearly more than 95% incidence visible light.It is wide less than its forbidden band for photon energy
The infra-red radiation of degree, the absorption coefficient of hydrogenation non crystal silicon film decline to a great extent.For example, hydrogenation non crystal silicon film is more than for wavelength
Absorption coefficient of the absorption coefficient of 800nm near infrared light than 650nm declines nearly 100 times.Thus, about 2 microns of thickness
Hydrogenated amorphous silicon photoelectric diode film can pass through more than 98% near infrared light.When about 2 microns of thick hydrogen
Change amorphous silicon membrane (the second semiconductor layer) and overlap the upper of a near-infrared components of photo-electric conversion (the first semiconductor layer 140)
Face, any harmful effect will not be produced to the near infrared light that it is passed through substantially.In other words, using the photoelectricity two of amorphous silicon hydride
Pole pipe can absorb most of visible rays as the visible ray electrooptical device of the second semiconductor layer and carry out opto-electronic conversion, and can
Passed through for most of near infrared lights so that near infrared light can reach the first semiconductor layer 140.
Filter layer is located at the second semiconductor layer backwards to the side of the first semiconductor layer 140.Filter layer includes arranging by array
Multiple optical filters (such as blue color filter 111 and Red lightscreening plate 112).Each optical filter forms a filtered region, for pair
The visible ray and near infrared light for answering a kind of wave band of color pass through.In the present embodiment, multiple optical filters include visible ray light
The band logical colored filter of shorter wavelength is (such as the blue filter that passes through of light that wave-length coverage is 400nm to 460nm in spectrum
Piece 111) and visible light in the band logical colored filter of longer wavelength (for example for wave-length coverage be 650nm to 760nm
The Red lightscreening plate 112 that light passes through).In the present embodiment, filter layer, which can also include transparent film layer 113, (such as transparent has
Machine film).Transparent film layer 113 also forms multiple filtered regions and passed through for visible ray and near infrared light.It is blue color filter 111, red
Colo(u)r filter 112 and transparent film layer 113 periodically where substrate plane both direction (such as orthogonal two sides
To) repeat, form the array of filtered region.The photodiode 121,122 of corresponding second semiconductor layer of each filtered region and
123 (such as photodiodes of three p-i-n junctions of amorphous silicon hydride).Reference can be made to Fig. 2 is saturating to understand the light of different optical filters
Cross rate.According to Fig. 2, it is seen that the colored filter of optical band would generally permeation parts or the overwhelming majority wavelength be more than 760nm
Infrared ray, so the overwhelming majority infrared ray can pass through filtered region array.
Thus, when light incides multispectral camera device, the light and near infrared light of blue wave band pass through blue color filter
111st, the light of red band and near infrared light through transparent film layer and arrive through Red lightscreening plate 112, visible ray and near infrared light
Up to the electrooptical device of corresponding second semiconductor layer, the second semiconductor layer corresponds to filtered region photoelectrically converting blue light, red
Light and visible ray.Near infrared light reaches the first semiconductor layer 140 through the second semiconductor layer simultaneously, and near infrared light is led the first half
Body layer 140 is converted into electronics and is stored temporarily in inside corresponding storage capacitance, until the reading of signal charge in respective pixel
Go out the generation (example of the homing action of (for example, the first semiconductor layer 140 is the occasion of photodiode array) or pixel potential
Such as, the occasion of the first semiconductor layer 140 application CMOS active pixel sensor).
Alternatively, in the present embodiment, multispectral camera device also includes insulation passivating film 130, positioned at the first semiconductor
Between the semiconductor layer of layer 140 and second.Insulation passivating film 130 at least passes through near infrared light.Passivating film 130 insulate by the second half
Conductor layer (for example, hydrogenation non crystal silicon film photodiode) and the insulation of the first semiconductor layer 140 (such as silicon semiconductor device)
And reduce the coupling of the parasitic capacitance between them.
Further, for the sake of clarity, Fig. 1 only shows to be related to associated components of the present utility model, and those skilled in the art can
To increase some layers or part according to practical application and processing procedure, for example, the electrode of the electrooptical device of the second semiconductor layer and
Its corresponding pixel switch；Photodiode and other related ion implantings and diffusion layer in first semiconductor layer 140
Structure；Other electrodes；Pixel switch；And the data wire of signal output and grid-control line etc..Basic without departing substantially from the utility model
In the case of design, the increase of these parts is all in the scope of protection of the utility model.
Referring to Fig. 3, Fig. 3 is the schematic diagram of the multispectral camera device of the utility model second embodiment.It is multispectral
Camera device includes substrate and the first semiconductor layer 240, the second semiconductor layer and the filter layer that are sequentially formed on substrate.Enter
One step, the pattern of the second semiconductor layer includes multiple second sub-patterns for being arranged in a matrix, and (each second sub-pattern can correspond to
One photodiode).Each the second sub-pattern (photodiode) for being connected to electrical components forms an optical photon pixel.
Each filtered region covering at least optical photon pixel.Specifically, in the present embodiment, the light of each second semiconductor layer
Electric diode is corresponding overlapping in the upright projection of substrate and multiple filtered regions of filter layer.Such as the correspondence of blue color filter 211
The photodiode of one second semiconductor layer；The photodiode of corresponding one second semiconductor layer of Red lightscreening plate 212；Hyaline membrane
Layer 213 also corresponds to the photodiode of one second semiconductor layer.Optical photon pixel can include red sub-pixel, the sub- picture of blueness
Element, green sub-pixels, yellow sub-pixel, pinkish red sub-pixels, appointing in bluish-green sub-pixels and white or clear subpixel
Two or more.The pattern of first semiconductor layer includes multiple first sub-patterns for being arranged in a matrix, and (each first sub-pattern can
A corresponding photodiode).Each first sub-pattern (photodiode) forms a near infrared light sub-pixel.At least two is visible
Sub-pixels and at least one near infrared light sub-pixel form a pixel cell, so that multispectral camera device obtains at least two
The visible images of different-waveband and at least one near infrared light image.Fig. 3 shows a pixel cell, shown in Fig. 3
In embodiment, it is near red that each pixel cell includes a blue light sub-pixel, a feux rouges sub-pixel, a white sub-pixels and one
Outer sub-pixels.Multispectral camera device can obtain blue light images, feux rouges image, White-light image and a near infrared light figure
Picture.
Specifically, multispectral camera device includes a plurality of gate line that the side of multiple semiconductor layers is set positioned at substrate
And a plurality of data lines.A plurality of gate line arranges in the first direction in the plane of substrate, and the gate line extended in a second direction.
A plurality of data lines arranges in a second direction, and the data wire extended in a first direction.First direction is perpendicular to second direction.It is optional
Ground, the matrix arrangement of the second sub-pattern of above-mentioned filtered region, the first sub-pattern of the first semiconductor layer and the second semiconductor layer
Direction also for first direction can second direction, but the utility model is not so limited.The pattern (first of each first semiconductor layer
Each photodiode of semiconductor layer) it is electrically connected to the control pole of a switch element, and two poles point for passing through the switch element
Gate line and data wire are not electrically connected to it.Pattern (the pole of each photoelectricity two of the second semiconductor layer of at least partly the second semiconductor layer
Pipe) control pole of a switch element is electrically connected to, and it is respectively electrically connected to gate line sum by two poles of the switch element
According to line.
Further, in the present embodiment, three optical photon pixels of each pixel cell include and blue color filter 211
Upright projection on substrate corresponds to overlapping a-Si:H thin film photodiodes (photodiode of the second semiconductor layer), with
Upright projection of the Red lightscreening plate 212 on substrate corresponds to overlapping a-Si:H thin film photodiodes be (the second semiconductor layer
Photodiode), and the corresponding overlapping a-Si of upright projection with transparent film layer 213 on substrate:H thin film photodiodes
23 (photodiodes of the second semiconductor layer).The near infrared light sub-pixel of each pixel cell is the c-Si light being produced in substrate
Electric diode (photodiode of the first semiconductor layer 240).Each optical photon pixel and near infrared light sub-pixel are by being produced on
The source-drain electrode of c-Si mos transistor switches on substrate is connected on data wire 271 or 272.The switch element of blue subpixels
251 and the grid (control pole) of switch element 252 of red sub-pixel be all connected on gate line 261.White sub-pixels are opened
The grid (control pole) for closing the switch element 254 of element 253 and infrared sub-pixel is all connected on gate line 262.It is specific one
In realization, when the scanning impulse for being added high potential on each gate line of this multispectral camera device successively (corresponds to N-MOS
The occasion of transistor switch) when, the signal charge of interim storage is just read out sequentially on data wire in each sub-pixel, and most
Gathered and further handled by peripheral circuit eventually.
In the present embodiment, in order to allow photo-generated carrier in the first semiconductor layer collect and transmit it is more smooth,
The photodiode 240 of semi-conductor layer substrate upright projection in the plane be a complete rectangular configuration and complete
Cover three a-SiH photodiodes of the second semiconductor layer substrate upright projection in the plane, and the first half lead
The photodiode 240 of body layer substrate upright projection in the plane exceed three a-SiH photoelectricity of the second semiconductor layer
Diode substrate upright projection in the plane border.In order to not allow between visible light-transmissive a-SiH photodiodes
Gap enter the first semiconductor layer photodiode 240, so as to obtain purer no visible light signal mix it is infrared
Signal, the windowing matrix 219 for having used in the present embodiment black organic film to be formed, or commonly referred to as BM (blackmatrix), hide
Keep off the first semiconductor layer that this part is not blocked by the metal line in a-SiH films and array.The side of windowing matrix 219
Boundary determines the effective area of shining light of first layer semiconductor layer and the second semiconductor layer, that is, the open area in Fig. 3
(Aperture) area shown in 201.
, not only can be with addition, the white sub-pixels being made up of the photodiode of the semiconductor layer of transparent film layer 213 and second
More near infrared lights are allowed to reach the first semiconductor layer 240 for carrying out opto-electronic conversion near infrared light through transparent film layer 213, and
And the spectral response curve for the a-SiH photodiodes for passing through the second semiconductor layer, while can be according to a-SiH in red sub-pixel
The pole of a-SiH photoelectricity two in the area of a-SiH photodiodes, white sub-pixels in the area of photodiode, blue subpixels
The area ratio of pipe, and respective output electric signal, and a-SiH photodiode Dui Red colors, blueness and green spectral
Quantum efficiency, the composition that green glow is calculated according to below equation group come.
In above-mentioned formula, SR, SB, SWR, the output electric signal of tri- sub-pixels of B, W are represented respectively；TRRepresent red filter
Mating plate is to the transmitance of feux rouges, TBTransmitance of the blue color filter to blue light is represented, its numerical value can be from Fig. 2 transmittance curve
Obtain；ηR,ηB,ηGA-SiH photodiodes are represented respectively to R, the quantum efficiency of tri- kinds of color of light of B, G；PR,PB,PGThen divide
Incident light is not represented to the R in a-SiH photodiodes, the luminous intensity of tri- kinds of color of light of B, G or the photon of unit area
Density；AR,AB,AW, then R, the light-receiving area of tri- sub-pixels of B, W are represented respectively.In above-mentioned equation group, except incident light
Beyond the light intensity of each spectrum, all parameters can in advance be measured or obtained by each component of output signal.Three
Equation, three unknown numbers, so unique solution can be obtained by above-mentioned equation group, so as to synthesize and restore incident ray sheet
The color come.Alternatively, in the present embodiment, transparent film layer 213 can also be replaced by green color filter, to simplify color rendition
The step of Deng image procossing.
Referring to Fig. 4, Fig. 4 is the schematic diagram of the multispectral camera device of the utility model 3rd embodiment.With Fig. 3 institutes
The second embodiment shown is similar, and multispectral camera device includes substrate and the first semiconductor layer being sequentially formed on substrate
340th, the second semiconductor layer and filter layer.Multispectral camera device also includes a plurality of gate line and data wire.
Fig. 4 shows a pixel cell, to should pixel cell, filter layer include blue color filter 311, red filter
Piece 312, transparent film layer 313 and green color filter 314.The filtered region that each optical filter and transparent film layer are formed hanging down on substrate
Deliver directly the photodiode that shadow is more than and the second each corresponding semiconductor layer is completely covered.For the sake of simplicity used here as weight
Two words are folded to state, and are simply illustrated with same outline in Fig. 4.In other words, the optical filtering that blue color filter 311 is formed
Upright projection of the region on substrate is corresponding overlapping with a photodiode of the second semiconductor layer；Red lightscreening plate 312 is formed
Upright projection of the filtered region on substrate it is corresponding overlapping with a photodiode of the second semiconductor layer；Transparent film layer 313
Upright projection of the filtered region of formation on substrate is corresponding overlapping with a photodiode of the second semiconductor layer；Green filter
Upright projection of the filtered region that piece 314 is formed on substrate is corresponding overlapping with a photodiode of the second semiconductor layer.
Wherein, the photodiode of the second overlapping semiconductor layer corresponding with the filtered region that blue color filter 311 is formed
Data wire 371 is connected to by the source-drain electrode of switch element 351, the grid of switch element 351 is connected to gate line 361, with this
Form a blue subpixels；The photoelectricity two of the second overlapping semiconductor layer corresponding with the filtered region that Red lightscreening plate 312 is formed
Pole pipe is connected to data wire 372 by the source-drain electrode of switch element 352, and the grid of switch element 352 is connected to gate line 361,
One red sub-pixel is formed with this；The light of the second overlapping semiconductor layer corresponding with the filtered region that green color filter 314 is formed
Electric diode is connected to data wire 371 by the source-drain electrode of switch element 353, and the grid of switch element 353 is connected to gate line
362, a green sub-pixels are formed with this；The second overlapping semiconductor layer corresponding with the filtered region that transparent film layer 313 is formed
Photodiode is electrically hanging.
To should pixel cell, the upright projection of the photodiode of the first semiconductor layer 340 on substrate is less than and quilt
The photodiode of the second overlapping semiconductor layer corresponding with the filtered region that transparent film layer 313 is formed is completely covered, and not
The photodiode of each second semiconductor layer with being electrically connected to switch element is overlapping.The photoelectricity two of first semiconductor layer 340
Pole pipe forms a near infrared light sub-pixel in the pixel cell.The photodiode of first semiconductor layer 340 passes through switch
The source-drain electrode of element 354 is connected to data wire 372, and the grid of switch element 354 is connected to gate line 362.Transparent film layer 313
Another effect is then to planarize device surface, so from manufacturing process flow, transparent film layer 313 is actually also
It can be coated in the coating of other optical filters after graphical segmentation and baking process on all sub-pixel optical filters,
In such a embodiment, the border of transparent film layer 313 is just no longer limited to a sub-pixel, but expands to a plurality of sub-pixels very
To the light-receiving area of whole image sensor, on the one hand the window as all-transparent sub-pixel, another aspect again can be by respectively
Gap filling and planarization between individual optical filter island.In addition, it is contemplated that colored filter passes through for the height of infrared ray
Property, the transparent film layer 313 in the present embodiment can also substitute by any colored organic film, for example use and red filter
Material as piece 312, made in same technological process.
Thus, in the present embodiment, each pixel cell include a blue light sub-pixel, a feux rouges sub-pixel, one it is green
Sub-pixels and a near infrared light sub-pixel.Near infrared light sub-pixel and other optical photon pixels are not overlapping.It is multispectral to take the photograph
As device can obtain blue light images, feux rouges image, green glow image and a near infrared light image.
In the present embodiment, using blue color filter 311, Red lightscreening plate 312 and green color filter 314, so as to
Three-primary-color image is directly obtained, simplifies the process that color is calculated and reconstructed.In addition, in the present embodiment, the first semiconductor layer 340
Photodiode not each second semiconductor layer with being electrically connected to switch element photodiode it is overlapping, their own electricity
Appearance will diminish, and the associated parasitic capacitance of photodiode noise (such as KTC noise) can it is relative reduce, and
Other negative effects that parasitic capacitance is brought, such as signal cross-talk also can be reduced correspondingly.
Referring to Fig. 5, Fig. 5 is the schematic diagram of the multispectral camera device of the utility model fourth embodiment.With Fig. 4 institutes
The 3rd embodiment shown is similar, multispectral camera device include substrate and be sequentially formed on substrate the first semiconductor layer,
Second semiconductor layer and filter layer.Multispectral camera device also includes a plurality of gate line and data wire.
Fig. 5 shows a pixel cell, to should pixel cell, filter layer include blue color filter 411, red filter
Piece 412, infrared fileter 415 and transparent film layer 416.The filtered region that each optical filter and transparent film layer are formed hanging down on substrate
Deliver directly the photodiode that shadow is more than and the second each corresponding semiconductor layer is completely covered.For the sake of simplicity used here as weight
Two words are folded to state, and are simply illustrated with same outline in Figure 5.Infrared fileter 415 may filter that wave-length coverage
760nm to 900nm light.Transparent film layer 416 is available for visible ray and near infrared light to penetrate.
Wherein, the photodiode of the second overlapping semiconductor layer corresponding with the filtered region that blue color filter 411 is formed
Data wire 471 is connected to by the source-drain electrode of switch element 451, the grid of switch element 451 is connected to gate line 461, with this
Form a blue subpixels；The photoelectricity two of the second overlapping semiconductor layer corresponding with the filtered region that Red lightscreening plate 412 is formed
Pole pipe is connected to data wire 472 by the source-drain electrode of switch element 452, and the grid of switch element 452 is connected to gate line 461,
One red sub-pixel is formed with this；The light of the second overlapping semiconductor layer corresponding with the filtered region that infrared fileter 415 is formed
Electric diode is electrically hanging；The pole of photoelectricity two of the second overlapping semiconductor layer corresponding with the filtered region that transparent film layer 416 is formed
Pipe is electrically hanging.
To should pixel cell, the upright projection and and infrared filtering of the photodiode of the first semiconductor layer on substrate
The filtered region that piece 415 and transparent film layer 416 are formed correspond to the second overlapping semiconductor layer photodiode correspond to it is overlapping, and
And the photodiode of not each second semiconductor layer with being electrically connected to switch element is overlapping.The photoelectricity two of first semiconductor layer
Pole pipe forms two near infrared light sub-pixels in the pixel cell.First semiconductor layer of corresponding overlapping infrared fileter 415
Photodiode 441 data wire 472 is connected to by the source-drain electrode of switch element 454, the grid of switch element 454 is connected to
Gate line 462.The source that the photodiode 442 of first semiconductor layer of corresponding overlapping transparent film layer 416 passes through switch element 453
Drain electrode is connected to data wire 471, and the grid of switch element 453 is connected to gate line 462.
Thus, in the present embodiment, each pixel cell includes a blue light sub-pixel, a feux rouges sub-pixel and two
The near infrared light sub-pixel of different-waveband.Near infrared light sub-pixel is not overlapping with optical photon pixel.Multispectral camera device can
To obtain the near infrared light image of blue light images, feux rouges image and two different-wavebands.
Specifically, the filtering for being connected to the photodiode of the first semiconductor layer of switch element 454 can be regarded as
Two stages：Part 760nm to 900nm near infrared light is filtered out by infrared fileter 415 first, thereafter with infrared filtering
The a-SiH photodiode membrane filtrations of corresponding the second overlapping semiconductor layer of piece 415 fall all luminous rays, so being connected to
The photodiode of first semiconductor layer of switch element 454 only probing wave length can be more than 900nm near infrared light and be somebody's turn to do
Image information entrained by near infrared light.The filtering for being connected to the photodiode of the first semiconductor layer of switch 453 also may be used
To regard two stages as：Transparent film layer 416 can be the film nearly transparent to all near infrared lights, thereafter with hyaline membrane
The corresponding overlapping a-SiH photodiode membrane filtrations of layer 416 fall all luminous rays, and be connected to switch 453 the first half lead
The photodiode of body layer can gather the image entrained by all near infrared lights and the near infrared light of the wavelength more than 760nm
Information.Thus, subtract each other if the picture signal of the infrared sub-pixel of the two different-wavebands done according to certain weight, so that it may
To draw the image information of 760nm to 900nm infrared bands.
Realize that double infrared bands detection purpose second way that Fig. 5 is disclosed is that use can stop that wavelength is red more than 900nm
The optical filter of outside line replaces transparent film layer 416, so as to allow the photodiode for the first semiconductor layer for being connected to switch 453 to gather
The image information of 760nm to 900nm infrared band.
The third mode for realizing the detection of double infrared bands disclosed in Fig. 5 is that transparent film layer is being used for into 416 and 415
Optical filter, allow all infrared lights to pass through optical filter and the second semiconductor layer a-SiH, then led by the first the half of different-thickness
The photodiode of body layer gathers the infrared ray of the infrared ray of shorter wavelength and longer wavelength.Specifically, reference picture 8, institute
The thickness for the light n-type doping layer 640 shown is bigger, and the composition of the infrared ray of the long wave of absorption is more.Being connected to out in Figure 5
The photodiode for closing 453 the first semiconductor layer is set as 0.5 micron to 3 microns of thickness, is arrived for detecting 760nm
900nm or so infrared ray, the photodiode for being connected to the first semiconductor layer of switch 454 are set greater than the former thickness
For example micron thickness can just detect the infrared ray from 760nm to 1000nm or until more long wave from 1 to 15.Both output letters
Number subtract each other, the Infrared Image Information with regard to two different-wavebands can be drawn.It is appreciated that because the depth of semiconductor doping can be with
Controlled by kinetic energy during ion implanting, that is, need to increase the process of one of ion implanting.In this implementation of some occasions
Example compares the accurate optical filter passed through for different infrared lights and is more convenient for making.
In other words, by taking the shooting to human body skin as an example, taken to separate and gather the infrared ray of different-waveband scope
The infrared absorption and reflected image information of the hypodermis of band, in the present embodiment, not only it will be seen that the spectral region of light is divided into
Two wave bands, 400nm to 500nm blue wave band, 650nm to 760nm red band, even more by the model of near infrared spectrum
Enclose and be also divided into 760nm to 900nm, 900nm to 1100nm two near infrared bands.The image information of four spectral bands is pressed
According to gathering and being sent to the processing that external circuit does further each self-channel by four sub-pixels respectively, then by four figures
As the information of channel does computing, that is, draw the image information of hypodermis different depth tomography.The present embodiment provides multispectral
Camera device can absorb the image information of the solution plane section of subcutaneous at least four depth, to the more details of subcutis
Real-time monitored and the degree that understands, and subsequent treatment level can just have great raising.
Referring to Fig. 6, Fig. 6 is the schematic diagram of the multispectral camera device of the embodiment of the utility model the 5th.With Fig. 3 institutes
The second embodiment shown is similar, multispectral camera device include substrate and be sequentially formed on substrate the first semiconductor layer,
Second semiconductor layer and filter layer.Multispectral camera device also includes a plurality of gate line and data wire.
Fig. 6 shows a pixel cell, to should pixel cell, filter layer includes blue color filter 511 and red filter
Mating plate 512.Upright projection of the filtered region that each optical filter is formed on substrate covers the photodiode of the second semiconductor layer.
In the present embodiment, upright projection of the filtered region that each optical filter is formed on substrate covers multiple light of the second semiconductor layer
Electric diode.In other words, upright projection of the filtered region that blue color filter 511 is formed on substrate covers the second semiconductor layer
Photodiode 521 and 525；Upright projection covering the second half of the filtered region that Red lightscreening plate 512 is formed on substrate
The photodiode 522 and 524 of conductor layer.
Wherein, the photodiode 521 of the second semiconductor layer covered by the filtered region that blue color filter 511 is formed leads to
The source-drain electrode for crossing switch element 551 is connected to data wire 571, and the grid of switch element 551 is connected to gate line 561, with this shape
Into a blue subpixels；The photodiode 522 for the second semiconductor layer that the filtered region formed by Red lightscreening plate 512 covers
Data wire 572 is connected to by the source-drain electrode of switch element 552, the grid of switch element 552 is connected to gate line 561, with this
Form a red sub-pixel；The photodiode 525 and 524 of second semiconductor layer is electrically hanging.
To should pixel cell, the photodiode 541 and 542 of the first semiconductor layer is not with being electrically connected to switch element
The photodiode of each second semiconductor layer is overlapping, and the photodiode 541 and 542 of the first semiconductor layer is respectively with the second half
The correspondence of photodiode 525 and 524 of conductor layer.The photodiode 541 and 542 of first semiconductor layer is in the pixel cell
Two near infrared light sub-pixels of middle formation.The source-drain electrode that the photodiode 541 of first semiconductor layer passes through switch element 554
Data wire 572 is connected to, the grid of switch element 554 is connected to gate line 562.The photodiode of first semiconductor layer
542 are connected to data wire 571 by the source-drain electrode of switch element 553, and the grid of switch element 553 is connected to gate line 562.
Thus, in the present embodiment, it is near to include a blue light sub-pixel, a feux rouges sub-pixel and two for each pixel cell
Infrared photon pixel.Near infrared light sub-pixel is not overlapping with optical photon pixel.Multispectral camera device can obtain blue light figure
Picture, feux rouges image and two near infrared light images.
Specifically, in the present embodiment, by adjusting or changing the type and quantity for the pigment for mixing colored filter,
Adjustment is red and blue color filter for the near infrared ray of shortwave transmitance, so as to which red and blue color filter can be
It is multiplexed on the photodiode 541 and 542 of two the first semiconductor layers near infrared light opto-electronic conversion.According to Fig. 6, this implementation
Structure and manufacturing sequence disclosed in example can save at least twice film coated, twice photoetching process, enormously simplify manufacture
The difficulty of technique and shorten the duration.
With reference to Fig. 7 and Fig. 8, Fig. 7 is the schematic diagram of the multispectral camera device of the utility model sixth embodiment.Figure
8 be the A-A ' sectional views in Fig. 7.
The present embodiment is that (each pixel cell includes four sub-pixels, and red sub-pixel is blue in the embodiment shown in Fig. 2
Sub-pixels (or green sub-pixels), white sub-pixels (or the pixel of other colors such as green sub-pixels) and and near red
Outer sub-pixels) on the basis of be a kind of of further specific implementation approach on the semiconductor device and implemented.
Wherein, switch element 651,652,653,654 can be respectively NMOSFET (the N-type metal oxidations of four sub-pixels
Thing semiconductor field effect transistor).Switch element 651,652,653,654 is all produced on silicon substrate 641.The grid of polysilicon
Polar curve 661 controls two sub-pixels of the first row (in the red sub-pixel and blue subpixels of the arranged on planes of substrate 641)
Switch element 651,652.The gate line 662 of polysilicon controls two sub-pixels of the second row (in the side of vertical substrate 641
The white sub-pixels and infrared photon pixel arranged upwards) switch element 653,654.Data wire 671 and 672 is respectively in substrate
The drain electrode of these longitudinally connected switch elements in 641 planes, and pass the signal along to external signal amplification and (do not show with process circuit
Go out).
In order to isolate the interference between different signal source, receipts of the charge storage layer for the dark current of surrounding semiconductor are reduced
Collection, STI (Shallow Trench Isolation, shallow-trench isolation) 44 will be seen that the switch element 651 of three sub-pixels of light,
652 grade of 653 surrounding is around being protected, and another STI 43 is then by the light of the first semiconductor layer of infrared photon pixel
The switch element 654 of electric diode 640 and the electric charge of photodiode 640 is surrounded the semi-conducting material and device on same periphery
Keep apart.Alternatively examples of implementation, STI43 can also be substituted by the isolation strip of p-type heavy doping, in driving element
When, all p-type heavy doping isolation strip are applied in a fixed potential, electronic barrier are formed, to all photodiodes
Do and isolate with the n+ diffusion layers for being connected to photodiode.Sense the a-SiH photoelectricity two of three the second semiconductor layers of visible ray
Pole pipe is that a-SiH films are made to each isolated island-shaped pattern by photoetching process, so need not be extra between them
Divider wall, but have the flat and top layer insulating film of passivation 637 concurrently and keep apart each a-SiH photodiodes pattern
Come.The lower electrode 631 of a-SiH photodiodes is the transparency electrode that can pass through infrared ray, for example can be about 50nm
~200nm or so ito film.In some change case, the lower electrodes 631 of a-SiH photodiodes can use have necessarily
The n+ or p+ of the heavy doping high conductivity of thickness a-SiH films.
There are enough horizontal conductivities to reach, so as to which photogenerated charge is collected rapidly from the surrounding of the semiconductive thin film
Get up, and reduce the disconnection probability of the conductive path of step edge, using n+ or p+ a-SiH film layers when thickness should be big
In 50nm.Such as Fig. 7, the occasion in the lower electrode 631 using a-SiH photodiodes using n+ or p+ a-SiH films can
To omit interlayer dielectric 632 so as to simplify processing step.However, for when a-SiH photodiode patterns are etched,
Relative to the etch rate of field oxide 645 than sufficiently large, and the thickness of field oxide 645 wants enough thickness, such as field oxygen
The thickness for changing layer 645 can be at least over 100nm.
Other film layers and structure in Fig. 8 are as follows：It is the corresponding transparent film layer 613 in Fig. 7 from reference 633~636
The second semiconductor layer photodiode layering diagram.Reference 633 is a-SiH photodiode bottom heavy doping
Layer.In this embodiment, bottom heavily doped layer 633 uses n+ layers, and its thickness can be about 30nm~100nm.Accompanying drawing mark
Note 634 is the undoped a-SiH layers of a-SiH photodiodes, its thickness be about between 1 micron to 2 microns be absorb it is incident
Visible ray simultaneously will be seen that light is transformed into the semiconductor film of electron-hole pair；Reference 635 is a-SiH photodiodes
Top layer heavily doped layer.In this embodiment, top layer heavily doped layer 635 use p+ layers, top layer heavily doped layer 635 absorb light but
Substantially light-to-current inversion efficiency is not contributed.Because the film layer more than 100nm can significantly sponge the incident ray of short wavelength, it is less than
20nm can cause the injection dark current of top electrodes to increase sharply, therefore, top layer heavily doped layer 635 may be set in about 30nm~
100nm.Reference 636 is the top transparent conducting film of a-SiH photodiodes, such as ito film.Reference 638 be by
The conducting metal or gold that the nesa coating at the top of longitudinal a-SiH photodiodes is together in series in the plane of substrate 641
Belong to oxide (such as ITO).Transparent film layer 613 can be identical with the transparent film layer 213 in Fig. 2.Reference 673 is NMOS
FET source electrode.The photodiode 640 of first semiconductor layer can be produced on substrate 41 (such as c-Si p-types substrate)
Light n-type doping layer, deep N-type electronics potential well (N-WELL) is formed after its carrier is completely depleted, thus compare
It is adapted to detection to absorb the larger near infrared ray of depth.The heavy N-type doped layer 642 inside the NMOS FET of three optical photon pixels
It is connected to source metal.It is place that light n-type doping layer 640 and heavy N-type doped layer 642, which are combined during electric charge produces and accumulates,
In suspended state, its positioning changes with charge accumulation, also therefore referred to as floating diffusion layer or FD (Floating
Diffusion).And all NMOS FET drain diffusion layer is connected to drain metal, then by being connected to data wire, all the time
It is clamped at certain current potential.
According to above-mentioned each embodiment, the photodiode (photodiode of the second semiconductor layer) of non-crystalline silicon and crystallization
The photodiode (photodiode of the first semiconductor layer) of silicon incident light on direction it is overlapped, but from light
Learn and absorb and respectively take charge of its duty to greatest extent in opto-electronic conversion efficiency, from the storage and Transfer pipe of signal charge, also not
Clash.The coloured image of visible ray and gray scale (intensity) figure of infrared light are absorbed while the utility model provides effective
Picture, or the image of the image (such as three primary colors) of multiple different-wavebands of visible ray and multiple wave bands of infrared light is absorbed simultaneously
Approach and device architecture.Efficiently, it is portable, accurately obtain multispectral image, particularly human body hypodermis it is infrared
Image information, so as to significantly improve the level of medical imaging diagnosis and treatment.
In addition, the various embodiments shown in above-mentioned Fig. 1 to Fig. 8 are only schematical, it is not intended to limit this practicality newly
The protection domain of type.Such as arrangement, the combination of sub-pixel, and the annexation of sub-pixel and data wire and gate line is not with this
It is limited.The technology of four aspects is at least covered for the realization means on the specific semiconductor devices disclosed in Fig. 7 and Fig. 8
Content：The design of circuit and semiconductor device constructions；Manufacturing process flow and a range of technological parameter；Semiconductor, metal
With the material of dielectric film；Driving method during actual use.The combination of content and its various form disclosed in this four aspects
With deformation, the pixel arrangement scheme that is disclosed in other embodiment is applied to and based on the basic of the pixel arrangement in these embodiments
Other similar pixel arrangement schemes that concept is done, also should be understood that adhered to it is substantially general disclosed in the utility model
Read and within the scope of application of the present utility model.Specific example, but these specific examples are not limited to, including polysilicon is thin
Film, microcrystalline silicon film, amorphous selenium optoelectronic film, the semiconductive thin film of II-IV race, III-V race's semiconductive thin film, oxide are partly led
Body thin film, it may be suitable for substituting photoelectric conversion layer of this paper a-SiH films as the sub-pixel of responding to visible light.For
The switch MOS FET of connection photodiode PD and output signal line in each sub-pixel, can also use low temperature or high temperature
Multi-crystal TFT (THIN FILM TRANSISTOR, thin film transistor (TFT)), oxide semiconductor IGZOTFT, CdTe thin film TFT etc..
Below with reference to Fig. 9, Fig. 9 shows the schematic diagram of the multispectral camera system of the utility model embodiment.It is multispectral to take the photograph
As system includes the multispectral camera device 710 and processor 720 as shown in Fig. 1 to Fig. 8 any embodiments.Multispectral shooting
Device 710 is used for the electric signal that the light for inciding multispectral camera device 710 is converted into the image for representing different-waveband.Place
The image for the different-waveband that reason device 720 is used to communicate with multispectral camera device 710 and obtained to multispectral camera device 710
Electric signal handled.Alternatively, the electricity of the image for the different-waveband that processor 710 obtains to multispectral camera device 720
Signal carries out the addition and subtraction with weight and handled, and then can draw the subcutaneous different depth of human body, or different tissues is high right
Than degree image.
In view of this, multispectral camera device of the present utility model and multispectral camera system are filled by multispectral shooting
The structure put by the light for inciding multispectral camera device along vertical substrate direction and parallel orientation substrate be separated into it is multiple not
With the light of wave band to obtain the image of different-waveband simultaneously.The image of the different-waveband obtained simultaneously is in multispectral camera system
Subsequent treatment in be not in position skew equal error, reduce for this kind of error image procossing, improve different-waveband
Image processing speed.
Basic conception of the present utility model and specific some embodiments are described above.Need exist for statement
It is that the utility model is not limited to above-mentioned particular implementation, those skilled in the art can be within the scope of the claims
Various deformations or amendments are made, this has no effect on substantive content of the present utility model.The utility model is also not limited to this practicality
For the ease of illustrating the medical image application described by basic conception in new, also include the application such as work of other field certainly
Industry product and environment measuring, personal identification judgement, game and commercial activity of Virtual Space and augmented reality etc..
Claims (18)
- A kind of 1. multispectral camera device, it is characterised in that the multispectral camera device is used for the image for obtaining different-waveband, The multispectral camera device includes：Substrate；Multiple semiconductor layers, it is stacked in perpendicular to plane earth where substrate on the substrate, the semiconductor layer difference of different layers Photoelectrically change visible ray and near infrared light；AndFilter layer, positioned at the multiple semiconductor layer backwards to the side of the substrate, including the multiple filter areas being arranged in a matrix Domain, to incide the light of the multispectral camera device by wave band separation in the plane parallel to substrate.
- 2. multispectral camera device as claimed in claim 1, it is characterised in thatThe multiple semiconductor layer includes：First semiconductor layer, on the substrate, photoelectrically change near infrared light；Second semiconductor layer, positioned at first semiconductor layer backwards to the side of the substrate, visible ray is photoelectrically changed, and supply Near infrared light passes through；The filter layer is located at second semiconductor layer backwards to the side of first semiconductor layer, and the filter layer includes pressing Multiple optical filters of array arrangement, each optical filter form a filtered region, visible ray for a kind of corresponding wave band and Near infrared light passes through.
- 3. multispectral camera device as claimed in claim 2, it is characterised in that the pattern of second semiconductor layer is described Substrate upright projection in the plane be completely covered the pattern of first semiconductor layer in the substrate in the plane Upright projection.
- 4. multispectral camera device as claimed in claim 2, it is characterised in that the pattern of second semiconductor layer is described Substrate perpendicular projection in the plane cover the pattern of first semiconductor layer in the substrate in the plane Upright projection,The multispectral camera device also includes：Black matrix film and other light tight metals, are completely covered not by the above-mentioned of the pattern covers of above-mentioned second semiconductor layer The pattern of first semiconductor layer so that the gap that visible ray can not be passed through between the pattern of the second semiconductor layer enters the first half and led The light-to-current inversion region of body layer.
- 5. multispectral camera device as claimed in claim 2, it is characterised in that partial pattern connects in second semiconductor layer Electrical components are connected to, another part pattern is electrically hanging in second semiconductor layer.
- 6. multispectral camera device as claimed in claim 5, it is characterised in that the pattern of first semiconductor layer is described Substrate upright projection in the plane and be connected to electrical components second semiconductor layer partial pattern in the base Plate upright projection in the plane it is not overlapping.
- 7. multispectral camera device as claimed in claim 2, it is characterised in that each filtered region is where the substrate Upright projection in plane be completely covered the pattern of second semiconductor layer the substrate upright projection in the plane.
- 8. multispectral camera device as claimed in claim 2, it is characterised in that the filter layer also includes：Transparent film layer, shape Into multiple filtered regions, passed through for visible ray and near infrared light.
- 9. the multispectral camera device described in claim 8, it is characterised in that the transparent film layer covers its multiple all band Gap between filtered region and the filtered region, so that the top planarization of the multispectral camera device and and for visible Light and near-infrared pass through.
- 10. multispectral camera device as claimed in claim 2, it is characterised in thatThe pattern of second semiconductor layer includes multiple second sub-patterns being arranged in a matrix, and one is connected to the institute of electrical components State the second sub-pattern and form an optical photon pixel, each filtered region covers at least one optical photon pixel；The pattern of first semiconductor layer includes multiple first sub-patterns being arranged in a matrix, and first sub-pattern is formed One near infrared light sub-pixel；The optical photon pixel of at least two different-wavebands and at least one near infrared light sub-pixel group are into a pixel Unit, so that the multispectral camera device obtains the visible images of at least two different-wavebands and at least one near infrared light Image.
- 11. multispectral camera device as claimed in claim 10, it is characterised in that each pixel cell includes three differences The optical photon pixel of wave band and a near infrared light sub-pixel, so that the multispectral camera device obtains three The visible images of different-waveband and a near infrared light image.
- 12. multispectral camera device as claimed in claim 10, it is characterised in that each pixel cell includes two differences The near infrared light sub-pixel of the optical photon pixel of wave band and two different-wavebands, so that the multispectral shooting dress Put the visible images of two different-wavebands of acquisition and the near infrared light image of two different-wavebands.
- 13. multispectral camera device as claimed in claim 12, it is characterised in that two near-infrareds in each pixel cell The optical filter that sub-pixels stop near infrared light of the wavelength more than 900nm by a transparent film layer and one respectively covers.
- 14. multispectral camera device as claimed in claim 12, it is characterised in that two near-infrareds in each pixel cell The pattern of sub-pixels corresponding first semiconductor layer respectively has different thickness with the near-infrared of opto-electronic conversion different wave length Light.
- 15. multispectral camera device as claimed in claim 14, it is characterised in that first near infrared light in each pixel cell The thickness of first semiconductor layer corresponding to sub-pixel is 0.5 micron to 3 microns；First corresponding to second near infrared light sub-pixel The thickness of semiconductor layer is the thickness more than the first semiconductor layer corresponding to first near-infrared sub-pixel, and this second The thickness of first semiconductor layer corresponding near infrared light sub-pixel is 1 micron to 15 microns.
- 16. multispectral camera device as claimed in claim 10, it is characterised in that the optical photon pixel includes following son It is a variety of in pixel：Red sub-pixel；Blue subpixels；Green sub-pixels；Yellow sub-pixel；Pinkish red sub-pixels；Bluish-green sub-pixels；AndWhite sub-pixels.
- 17. multispectral camera device as claimed in claim 1, it is characterised in that the substrate is crystalline silicon substrate.
- A kind of 18. multispectral camera system, it is characterised in that including：Multispectral camera device as described in any one of claim 1 to 17, for the multispectral camera device will to be incided Light be converted into represent different-waveband image electric signal；AndProcessor, communicated with the multispectral camera device, the figure of the different-waveband obtained to the multispectral camera device The electric signal of picture is handled.
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|---|---|---|---|---|
| CN107170768A (en) * | 2017-06-13 | 2017-09-15 | 展谱光电科技（上海）有限公司 | Multispectral camera device and multispectral camera system |
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